JP5642593B2 - 裏面入射型半導体受光素子、光受信モジュール、光トランシーバ - Google Patents
裏面入射型半導体受光素子、光受信モジュール、光トランシーバ Download PDFInfo
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- JP5642593B2 JP5642593B2 JP2011050848A JP2011050848A JP5642593B2 JP 5642593 B2 JP5642593 B2 JP 5642593B2 JP 2011050848 A JP2011050848 A JP 2011050848A JP 2011050848 A JP2011050848 A JP 2011050848A JP 5642593 B2 JP5642593 B2 JP 5642593B2
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- 239000004065 semiconductor Substances 0.000 title claims description 92
- 230000003287 optical effect Effects 0.000 title claims description 53
- 239000000758 substrate Substances 0.000 claims description 49
- 239000004020 conductor Substances 0.000 claims description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 16
- 230000005540 biological transmission Effects 0.000 description 15
- 238000005530 etching Methods 0.000 description 6
- 230000031700 light absorption Effects 0.000 description 6
- 238000004364 calculation method Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
Description
Claims (8)
- 矩形状の半導体基板と、
前記半導体基板の表面における1辺側の中央部にあって、前記1辺からの距離が前記1辺に隣接する他の2辺の長さの1/2より短い位置に形成された、前記半導体基板の裏面から入射される光を受光するPN接合部を有するメサ状の受光部と、
前記受光部の上面に形成された、前記PN接合部の一方側に導通する第1導電型の電極と、
前記半導体基板の表面における前記1辺側の1隅部に形成された、前記受光部の上面より広い上面を有する主メサ部と、
前記主メサ部の上面まで引き出された、前記PN接合の他方側に導通する第2導電型の電極と、
前記半導体基板の表面における他の3つの隅部を含む領域に形成された、前記受光部の上面より広い上面を有する1または複数の副メサ部と、
前記副メサ部の上面に形成された電極と、
を含むことを特徴とする裏面入射型半導体受光素子。 - 請求項1に記載の裏面入射型半導体受光素子において、
前記受光部中心から前記1辺までの距離が0.1mm以下である、
ことを特徴とする裏面入射型半導体受光素子。 - 請求項1または2に記載の裏面入射型半導体受光素子において、
前記主メサ部の高さおよび前記副メサ部の高さは、前記受光部の高さ以上である、
ことを特徴とする裏面入射型半導体受光素子。 - 請求項1から3のいずれかに記載の裏面入射型半導体受光素子において、
前記半導体基板の表面における他の3つの隅部を含む領域に複数の副メサ部が形成される場合に、
前記複数の副メサ部の1つは、前記半導体基板の表面における前記1辺側の他の1隅部に形成され、該副メサ部の上面まで前記第1導電型の電極が引き出されており、
前記複数の副メサ部における他の副メサ部の上面には、前記PN接合部から絶縁されたダミー電極が形成されている、
ことを特徴とする裏面入射型半導体受光素子。 - 請求項1から4のいずれかに記載の裏面入射型半導体受光素子を内蔵することを特徴とする光受信モジュール。
- 請求項5に記載の光受信モジュールにおいて、
前記裏面入射型半導体受光素子の電気信号出力を増幅する前置増幅回路と、
前記第1導電型の電極が接続される信号電圧用配線と、前記第2導電型の電極が接続されるバイアス電圧用配線と、前記副メサ部の上面に形成された電極が接続される配線と、が形成された、前記裏面入射型半導体受光素子をその表面側から保持する保持部材と、
を含み、
前記保持部材の上面は前記前置増幅回路の近傍に位置し、かつ、前記保持部材の上面の高さと前記前置増幅回路の上面の高さとが略同一であり、
前記信号電圧用配線のうち前記保持部材の上面まで延伸した部分は、前記前置増幅回路の上面に形成された信号電圧用端子に導体ワイヤを介して接続されている、
ことを特徴とする光受信モジュール。 - 請求項6に記載の光受信モジュールにおいて、
前記受光部中心から前記信号電圧用端子までの接続配線長が1mm以下である、
ことを特徴とする光受信モジュール。 - 請求項5から7のいずれかに記載の光受信モジュールを備える光トランシーバ。
Priority Applications (2)
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JP2011050848A JP5642593B2 (ja) | 2010-05-18 | 2011-03-08 | 裏面入射型半導体受光素子、光受信モジュール、光トランシーバ |
US13/085,604 US8575714B2 (en) | 2010-05-18 | 2011-04-13 | Backside illuminated semiconductor light-receiving device, optical receiver module, and optical transceiver |
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JP2010114313 | 2010-05-18 | ||
JP2010114313 | 2010-05-18 | ||
JP2011050848A JP5642593B2 (ja) | 2010-05-18 | 2011-03-08 | 裏面入射型半導体受光素子、光受信モジュール、光トランシーバ |
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JP2012004537A JP2012004537A (ja) | 2012-01-05 |
JP5642593B2 true JP5642593B2 (ja) | 2014-12-17 |
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Family Cites Families (12)
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JPH04167565A (ja) * | 1990-10-31 | 1992-06-15 | Fujitsu Ltd | フリップチップ型受光素子 |
JP3913402B2 (ja) * | 1999-06-02 | 2007-05-09 | 新日本無線株式会社 | 高周波回路装置 |
JP5011607B2 (ja) * | 2001-04-16 | 2012-08-29 | 住友電気工業株式会社 | 受光素子 |
JP2003134051A (ja) * | 2001-10-25 | 2003-05-09 | Opnext Japan Inc | 光受信モジュール、光受信器及び光ファイバ通信機器 |
JP4009106B2 (ja) * | 2001-12-27 | 2007-11-14 | 浜松ホトニクス株式会社 | 半導体受光素子、及びその製造方法 |
JP4034153B2 (ja) * | 2002-09-20 | 2008-01-16 | ユーディナデバイス株式会社 | 半導体受光装置 |
JP2005108935A (ja) * | 2003-09-29 | 2005-04-21 | Opnext Japan Inc | 光受信モジュール及びその製造方法 |
JP2005277057A (ja) * | 2004-03-24 | 2005-10-06 | Anritsu Corp | 半導体受光素子及び半導体受光装置 |
CN101341600B (zh) * | 2005-12-26 | 2012-11-28 | 日本电气株式会社 | 半导体光学元件 |
JP5109981B2 (ja) * | 2007-01-22 | 2012-12-26 | 日本電気株式会社 | 半導体受光素子 |
JP5025330B2 (ja) * | 2007-05-22 | 2012-09-12 | 三菱電機株式会社 | 半導体受光素子およびその製造方法 |
JP5300375B2 (ja) * | 2008-08-26 | 2013-09-25 | 日本オクラロ株式会社 | 裏面入射型受光素子およびその製造方法 |
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- 2011-03-08 JP JP2011050848A patent/JP5642593B2/ja active Active
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JP2012004537A (ja) | 2012-01-05 |
US20110286083A1 (en) | 2011-11-24 |
US8575714B2 (en) | 2013-11-05 |
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