JP5606854B2 - 太陽電池の製造方法及び太陽電池の製造用治具 - Google Patents
太陽電池の製造方法及び太陽電池の製造用治具 Download PDFInfo
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- 238000007747 plating Methods 0.000 claims description 54
- 239000000758 substrate Substances 0.000 claims description 51
- 238000000034 method Methods 0.000 claims description 20
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 description 9
- 239000011159 matrix material Substances 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 244000126211 Hericium coralloides Species 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
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- 230000008569 process Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
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- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
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- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
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Description
10…基体
10a…受光面
10b…裏面
11n…n側電極
11p…p側電極
13…シード層
14…めっき膜
21…めっき用電極
24…めっき浴
30…治具
31…支持プレート
32…プレート本体
32c…配置領域
33…突出部
33a…当接部
34…給電部材
35…フランジ部材
36…付勢部材
40…ガイド部
40a…当接部
Claims (10)
- 光電変換部を含み一の主面を有する基体と、前記基体の一の主面の上に形成されためっき膜を含む電極とを備える太陽電池の製造方法であって、
複数の前記基体を、前記一の主面をプレート本体側として前記プレート本体に設けられた複数の配置領域のそれぞれに配置し、前記複数の配置領域のそれぞれに対して設けられた付勢部材を前記基体の前記一の主面と対向する他の主面に当接させて前記基体を前記プレート本体側に付勢することにより前記基体の一の主面を前記プレート本体側に配した給電部材に接触させた状態で前記複数の基体のそれぞれを前記プレート本体に固定し、前記複数の基体が固定された前記プレート本体をめっき浴中に配置して前記複数の基体のそれぞれに前記給電部材を経由して給電することにより前記各基体の前記一の主面上に同時に前記めっき膜を形成する、太陽電池の製造方法であって、
前記給電部材は、前記配置領域に配置される前記基体を挟んで前記付勢部材と対向する位置に配されている、太陽電池の製造方法。 - 前記基体は前記めっき膜の下地となるシード層を備え、
前記付勢部材によって前記基体を前記プレート本体側に付勢することにより前記シード層を前記給電部材に接触させ、前記給電部材を経由して前記シード層に給電することにより前記シード層上に前記めっき膜を形成する、請求項1記載の太陽電池の製造方法。 - 前記複数の基体を前記一の主面と対向する他の主面を前記プレート本体側として前記複数の配置領域のそれぞれに配置し、前記付勢部材を前記基体の前記一の主面に接触させて前記プレート本体側に付勢することにより各基体を前記プレート本体に固定し、前記付勢部材を経由して前記基体に給電することにより前記基体の前記一の主面に前記めっき膜を形成する、請求項1記載の太陽電池の製造方法。
- 前記基体は前記めっき膜の下地となるシード層を備え、
前記付勢部材を前記シード層に接触させて前記基体を前記プレート本体側に付勢することにより前記各基体を前記プレート本体に固定し、前記付勢部材を経由して前記シード層に給電することにより前記シード層上に前記めっき膜を形成する、請求項3記載の太陽電池の製造方法。 - 前記プレート本体は前記基体に当接する当接部を有し、
前記付勢部材によって前記基体を前記プレート本体側に付勢することにより前記各基体の端部を前記当接部に当接させて前記プレート本体に固定する、請求項1〜4のいずれか一項に記載の太陽電池の製造方法。 - 前記当接部は、前記プレート本体の一の主面から突出して設けられた複数の突出部のそれぞれに設けられている、請求項5記載の太陽電池の製造方法。
- 前記当接部は、傾斜部により構成されている、請求項5または6記載の太陽電池の製造方法。
- 光電変換部を含み一の主面を有する基体と、前記基体の前記一の主面の上に形成されており、めっき膜を含む電極とを備える太陽電池の前記めっき膜を形成する際に用いられる太陽電池の製造用治具であって、
前記基体が配置される領域である複数の配置領域を有するプレート本体と、前記プレート本体に接続されており、前記基体の端部と当接する当接部とを有する支持プレートと、前記基体の一の主面に給電する給電部材と、
前記複数の配置領域のそれぞれに対して前記配置領域に配置される前記基体を挟んで前記給電部材と対向する位置に設けられ、前記配置領域に配置された前記基体を前記プレート本体側に付勢する付勢部材と、
を備える、太陽電池の製造用治具。 - 前記当接部は、前記プレート本体の前記一の主面から突出して設けられた突出部のそれぞれに設けられている、請求項8記載の太陽電池の製造用治具。
- 前記給電部材は、前記付勢部材を兼ねる、請求項8記載の太陽電池の製造用治具。
Priority Applications (2)
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JP2010218614A JP5606854B2 (ja) | 2010-09-29 | 2010-09-29 | 太陽電池の製造方法及び太陽電池の製造用治具 |
PCT/JP2011/072179 WO2012043627A1 (ja) | 2010-09-29 | 2011-09-28 | 太陽電池の製造方法及び太陽電池の製造用治具 |
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JP2010218614A JP5606854B2 (ja) | 2010-09-29 | 2010-09-29 | 太陽電池の製造方法及び太陽電池の製造用治具 |
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JP5606854B2 true JP5606854B2 (ja) | 2014-10-15 |
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WO (1) | WO2012043627A1 (ja) |
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JPS61191467U (ja) * | 1985-05-17 | 1986-11-28 | ||
JPH04114564U (ja) * | 1991-03-28 | 1992-10-08 | 国際電気株式会社 | 薄型基板用メツキ治具 |
JP3661836B2 (ja) * | 1999-04-05 | 2005-06-22 | シャープ株式会社 | 太陽電池の製造方法 |
JP2002232114A (ja) * | 2001-02-05 | 2002-08-16 | Matsushita Electric Ind Co Ltd | 回路基板の製造装置およびこれを用いた製造方法 |
JP4157755B2 (ja) * | 2002-11-27 | 2008-10-01 | 新光電気工業株式会社 | ワーク整列方法 |
US7172184B2 (en) * | 2003-08-06 | 2007-02-06 | Sunpower Corporation | Substrate carrier for electroplating solar cells |
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