JP5603219B2 - 薄膜形成装置 - Google Patents
薄膜形成装置 Download PDFInfo
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3441—Dark space shields
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/026—Shields
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/026—Shields
- H01J2237/0268—Liner tubes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
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Description
前記真空槽の内部で基板を保持可能な基板ホルダと、
前記真空槽の内部で基板ホルダに対向させた状態でターゲットを取り付け可能な電極と、
前記基板と前記ターゲットの間の成膜空間に臨む、前記真空槽の側壁への膜の付着を防止するために前記側壁に沿って前記側壁を覆うように設けられた側壁シールドと、を有し、
前記側壁シールドは、前記ターゲットの端部と対向する前記側壁の位置から前記基板の端部と対向する前記側壁の位置に向かって延び、
ターゲット側における前記側壁シールドは平面を有するように形成され、基板側における前記側壁シールドは前記側壁から前記成膜空間に向かって突出する突出面を有するように形成され、
前記突出面は、前記平面と連続して形成されるように、前記電極から前記基板ホルダに向かう方向において、前記突出面の断面の曲率半径が無限大から連続的に減少する曲面又は前記突出面の断面の曲率半径が無限大から段階的に減少する曲面を有することを特徴とする。
(y>=0、−R<x<R、x,y共に単位はmmとする)
この円弧の接線の、傾きの変化率は、この式をxの2回微分した(2)式で与えられる。
ここで、X=0、y=Rの位置での傾きの変化率は、(3)式で表わされる。
これは、x=0での、曲率半径Rを関数とする接線の傾きの変化率を表している。これをf(R)とする。以上から、曲率半径R(単位はmm)が、R0からR1に変化する場合、その変曲点に於ける曲率の変動の大きさは、上記の式f(R)を使って、(4)式のように定義する。
これを曲率変化率F(R1,R0)とする。直線から曲率半径R1に変化する場合、その変曲点に於ける曲率の変動の大きさは、上記のR0が無限大であると考えて、曲率変化率は(5)式のように定義できる。
成膜装置に使用される側壁シールド20は、付着膜が付着しうる成膜空間に臨む面において、曲率半径が連続的に変化する曲面又は曲率半径が段階的に変化する曲面を有する。段階的に変化する曲率半径の曲率変化率が、全て、0.33未満になるように設計されていることが望ましい。後述の実施例において、平面から曲率半径が3mmの曲面に変化する曲率変化率0.333(有効少数点を3桁とする)の部分では、実際に膜剥がれが確認された。従って、曲率変化率が0.33未満になるように設計することで、曲率変化率が0.33以上である場合と比較して、シールドの大型化を抑制しながら付着膜の剥離を顕著に防止することができる。
Claims (6)
- 薄膜形成装置であって、
真空槽と、
前記真空槽の内部で基板を保持可能な基板ホルダと、
前記真空槽の内部で基板ホルダに対向させた状態でターゲットを取り付け可能な電極と、
前記基板と前記ターゲットの間の成膜空間に臨む、前記真空槽の側壁への膜の付着を防止するために前記側壁に沿って前記側壁を覆うように設けられた側壁シールドと、を有し、
前記側壁シールドは、前記ターゲットの端部と対向する前記側壁の位置から前記基板の端部と対向する前記側壁の位置に向かって延び、
ターゲット側における前記側壁シールドは平面を有するように形成され、基板側における前記側壁シールドは前記側壁から前記成膜空間に向かって突出する突出面を有するように形成され、
前記突出面は、前記平面と連続して形成されるように、前記電極から前記基板ホルダに向かう方向において、前記突出面の断面の曲率半径が無限大から連続的に減少する曲面又は前記突出面の断面の曲率半径が無限大から段階的に減少する曲面を有することを特徴とする薄膜形成装置。 - 前記段階的に変化する前記曲率半径の曲率変化率が0.33未満であることを特徴とする請求項1に記載の薄膜形成装置。
- 前記シールドは、ステンレス、アルミニウム、チタン、鉄、クロム、ニッケル、銅、または、これらの合金で製作されており、前記シールドの表面はブラスト処理、又は、アルミニウム、アルミナ、チタン、ニッケル、銅、イットリア、またはこれらの複合物質で溶射処理されていることを特徴とする請求項1または2に記載の薄膜形成装置。
- 前記シールドは、タングステン又はチタンを含む膜の成膜で使用されることを特徴とする請求項1乃至3のいずれか1項に記載の薄膜形成装置。
- 基板側の前記曲率半径は、前記ターゲット側の曲率半径よりも小さいことを特徴とする請求項1に記載の薄膜形成装置。
- 前記突出面は、前記平面と連続して形成されるように、前記電極から前記基板ホルダに向かうに方向において、
前記突出面の断面の曲率半径が無限大から第1の曲率半径に連続的に小さくなる第1曲面と、前記突出面の断面の曲率半径が前記第1の曲率半径から前記第1の曲率半径よりも小さい第2の曲率半径に連続的に小さくなる第2曲面と、前記突出面の断面の曲率半径が前記第2の曲率半径から前記第2の曲率半径よりも小さい第3の曲率半径に連続的に小さくなる第3曲面とを有する、または、
前記突出面の断面の曲率半径が無限大から第1の曲率半径に段階的に小さくなる第4曲面と、前記突出面の断面の曲率半径が前記第1の曲率半径から前記第1の曲率半径よりも小さい第2の曲率半径に段階的に小さくなる第5曲面と、前記突出面の断面の曲率半径が前記第2の曲率半径から前記第2の曲率半径よりも小さい第3の曲率半径に段階的に小さくなる第6曲面とを有することを特徴とする請求項1に記載の薄膜形成装置。
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JP2010274888A JP5603219B2 (ja) | 2009-12-28 | 2010-12-09 | 薄膜形成装置 |
US12/974,245 US9194038B2 (en) | 2009-12-28 | 2010-12-21 | Thin film forming apparatus, thin film forming method, and shield component |
TW099145222A TWI428960B (zh) | 2009-12-28 | 2010-12-22 | 薄膜形成裝置,薄膜形成方法及遮蔽組件 |
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JP2009296786 | 2009-12-28 | ||
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JP2010274888A JP5603219B2 (ja) | 2009-12-28 | 2010-12-09 | 薄膜形成装置 |
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JP2011153373A JP2011153373A (ja) | 2011-08-11 |
JP2011153373A5 JP2011153373A5 (ja) | 2014-01-30 |
JP5603219B2 true JP5603219B2 (ja) | 2014-10-08 |
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CN102484090B (zh) | 2009-07-14 | 2015-01-07 | 佳能安内华股份有限公司 | 基板处理设备 |
JP2013537719A (ja) * | 2010-08-20 | 2013-10-03 | アプライド マテリアルズ インコーポレイテッド | 長寿命デポジションリング |
JP5843602B2 (ja) | 2011-12-22 | 2016-01-13 | キヤノンアネルバ株式会社 | プラズマ処理装置 |
CN110273134B (zh) * | 2019-07-25 | 2024-06-21 | 深圳清华大学研究院 | 全口径薄膜沉积夹具 |
US12009191B2 (en) * | 2020-06-12 | 2024-06-11 | Applied Materials, Inc. | Thin film, in-situ measurement through transparent crystal and transparent substrate within processing chamber wall |
US11708635B2 (en) | 2020-06-12 | 2023-07-25 | Applied Materials, Inc. | Processing chamber condition and process state monitoring using optical reflector attached to processing chamber liner |
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US20110155059A1 (en) | 2011-06-30 |
TWI428960B (zh) | 2014-03-01 |
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