JP5600117B2 - ワイヤーソー切断の間の乾燥性を向上させるための組成物 - Google Patents
ワイヤーソー切断の間の乾燥性を向上させるための組成物 Download PDFInfo
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/007—Use, recovery or regeneration of abrasive mediums
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/10—Greenhouse gas [GHG] capture, material saving, heat recovery or other energy efficient measures, e.g. motor control, characterised by manufacturing processes, e.g. for rolling metal or metal working
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
本発明は、基材を、ワイヤーソーを用いてスライスするための組成物であって、(i)液体担体の質量を基準として少なくとも50質量%の水および液体担体の質量を基準として0.1質量%〜20質量%のポリオールを含む液体担体、(ii)前記液体担体中に懸濁された30質量%〜60質量%の研磨材、および(iii)0.2質量%〜10質量%の増粘剤、を含む組成物を提供する。
本発明は、ワイヤーソーを用いて基材をスライスするための組成物および、ワイヤーソーを用いて基材をスライスする方法を提供する。
この例は、種々の成分の、組成物の水分保持、清浄性(cleanability)、および沈降性への影響を示している。
Claims (10)
- 基材を、ワイヤーソーを用いてスライスするための組成物であって、
(i)液体担体であって、該液体担体の質量を基準として、少なくとも50質量%の水および0.1質量%〜20質量%のポリオールを含む液体担体、
(ii)該液体担体中に懸濁された30質量%〜60質量%の研磨材、該研磨材は、1μm〜100μmの平均粒径を有している、および
(iii)0.2質量%〜10質量%の増粘剤、
を含んでなり、更に塩化カルシウム、硫酸アンモニウム、硝酸アルミニウム、またはそれらの組み合わせを含む、組成物。 - 基材を、ワイヤーソーを用いてスライスするための組成物であって、
(i)液体担体の質量を基準として少なくとも50質量%の水および、一価のアルコールまたは塩から選ばれる少なくとも1種の添加剤を含む液体担体であって、該一価のアルコールは該液体担体中に、該液体担体の質量を基準として0.1質量%〜20質量%で存在し、該塩は、塩化カルシウム、硫酸アンモニウム、硝酸アルミニウムおよびそれらの組み合わせからなる群から選ばれる、液体担体、および
(ii)該液体担体中に懸濁された30質量%〜60質量%の研磨材、該研磨材は、1μm〜100μmの平均粒径を有している、
を含んでなる組成物。 - 前記一価のアルコールが、4個もしくは5個以上の炭素の炭素鎖を有している、請求項2記載の組成物。
- 前記4個もしくは5個以上の炭素の炭素鎖を有する一価のアルコールが、1−ヘキサノール、1−オクタノール、2−エチルヘキサノールまたは2−ブチル−1−オクタノールである、請求項3記載の組成物。
- 前記一価のアルコールが、少なくとも2.5:1の炭素原子と酸素原子の比を有している、請求項2記載の組成物。
- 前記組成物が、更に酸化剤を含んでいる、請求項2記載の組成物。
- 前記研磨材が、炭化ケイ素、シリカ、アルミナおよびそれらの組み合わせからなる群から選ばれる、請求項2記載の組成物。
- 前記組成物が、更に増粘剤を含む、請求項2記載の組成物。
- 前記増粘剤が、非イオン性ポリマーである、請求項8記載の組成物。
- 基材をスライスする方法であって、
(i)該基材を、請求項1記載の組成物と接触させる工程、
(ii)該基材と該組成物を、ワイヤーソーと接触させる工程、ならびに
(iii)該ワイヤーソーを、これを該組成物と接触させて、該基材に対して動かして、該基材の少なくとも一部を研削して、該基材をスライスする工程、
を含んでなる、方法。
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US61/203,146 | 2008-12-20 | ||
PCT/US2009/068909 WO2010071870A2 (en) | 2008-12-20 | 2009-12-21 | Composition for improving dryness during wire sawing |
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JP2012512757A5 JP2012512757A5 (ja) | 2012-07-19 |
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JP6039935B2 (ja) * | 2012-06-29 | 2016-12-07 | 出光興産株式会社 | 水性加工液 |
KR102040050B1 (ko) * | 2013-08-02 | 2019-11-05 | 동우 화인켐 주식회사 | 웨이퍼 다이싱용 세정제 조성물 |
CN104194647B (zh) * | 2014-09-02 | 2016-04-06 | 蓝思科技股份有限公司 | 一种加工蓝宝石专用钻石研磨液和研磨膏及它们的制备方法 |
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US4468339B1 (en) * | 1982-01-21 | 1989-05-16 | Aqueous compositions containing overbased materials | |
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JP2894566B2 (ja) * | 1989-12-08 | 1999-05-24 | ユシロ化学工業株式会社 | 切断加工用油剤 |
JP3347278B2 (ja) * | 1997-10-08 | 2002-11-20 | ユシロ化学工業株式会社 | 難燃性潤滑油組成物ならびにこれを用いた切削液および切断方法 |
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JP4345357B2 (ja) * | 2003-05-27 | 2009-10-14 | 株式会社Sumco | 半導体ウェーハの製造方法 |
JP2005034986A (ja) * | 2003-06-27 | 2005-02-10 | Showa Denko Kk | 研磨用組成物とそれを用いた基板研磨方法 |
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US20090094901A1 (en) * | 2006-04-24 | 2009-04-16 | Hitachi Chemical Co. Ltd. | CMP Polishing Liquid and Polishing Method |
CN101528885B (zh) * | 2006-08-30 | 2016-04-13 | 圣戈本陶瓷及塑料股份有限公司 | 用于磨料浆料的含水液体组合物,及其制备方法和使用方法 |
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US8597538B2 (en) | 2013-12-03 |
WO2010071870A2 (en) | 2010-06-24 |
CN102257602A (zh) | 2011-11-23 |
JP2012512757A (ja) | 2012-06-07 |
KR20110104066A (ko) | 2011-09-21 |
IL213232A0 (en) | 2011-07-31 |
MY152029A (en) | 2014-08-15 |
WO2010071870A3 (en) | 2010-09-10 |
SG172288A1 (en) | 2011-07-28 |
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