JP5597051B2 - Laser processing method - Google Patents
Laser processing method Download PDFInfo
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- JP5597051B2 JP5597051B2 JP2010164063A JP2010164063A JP5597051B2 JP 5597051 B2 JP5597051 B2 JP 5597051B2 JP 2010164063 A JP2010164063 A JP 2010164063A JP 2010164063 A JP2010164063 A JP 2010164063A JP 5597051 B2 JP5597051 B2 JP 5597051B2
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
- B23K26/359—Working by laser beam, e.g. welding, cutting or boring for surface treatment by providing a line or line pattern, e.g. a dotted break initiation line
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
Description
本発明は、板状の加工対象物から複数の有効部を切り出すためのレーザ加工方法に関する。 The present invention relates to a laser processing method for cutting out a plurality of effective portions from a plate-like workpiece.
上記技術分野のレーザ加工方法として、ウェハにレーザ光を照射することにより、切断予定ラインに沿ってウェハの内部に改質領域を形成し、その改質領域から発生した亀裂をウェハの表面及び裏面に到達させることにより、切断予定ラインに沿ってウェハを切断し、複数のチップを取得するものが知られている（例えば、特許文献１参照）。 As a laser processing method in the above technical field, a modified region is formed inside the wafer along a planned cutting line by irradiating the wafer with laser light, and cracks generated from the modified region are removed from the front and back surfaces of the wafer. It is known that a plurality of chips are obtained by cutting the wafer along a planned cutting line (see, for example, Patent Document 1).
ところで、１枚のウェハからのチップの取得数を増加させる観点では、チップに対応する有効部をウェハに対してマトリックス状に配置するよりも、例えば列方向においてジグザグ状に配置するほうが有利な場合がある。また、例えば六角形等、四角形以外の有効部をウェハに対して複数設定すべき場合がある。これらの場合には、隣り合う第１の有効部及び第２の有効部において、第２の有効部の外縁に沿う第２の切断予定ラインが、第１の有効部に向かって、第１の有効部の外縁に沿う第１の切断予定ラインに突き当たる状態が生じ得る。このような状態においては、第２の切断予定ラインに沿って改質領域を形成した際に、その改質領域から発生した亀裂が第１の有効部内に至り、第１の有効部に損傷が生じるおそれがある。 By the way, from the viewpoint of increasing the number of chips acquired from one wafer, it is advantageous to arrange, for example, zigzags in the column direction rather than arranging effective portions corresponding to the chips in a matrix. There is. Further, there may be a case where a plurality of effective portions other than a quadrangle, such as a hexagon, should be set for the wafer. In these cases, in the adjacent first effective portion and second effective portion, the second scheduled cutting line along the outer edge of the second effective portion is directed toward the first effective portion. A state of hitting the first scheduled cutting line along the outer edge of the effective portion may occur. In such a state, when the modified region is formed along the second scheduled cutting line, a crack generated from the modified region reaches the first effective portion, and the first effective portion is damaged. May occur.
そこで、本発明は、第２の有効部の外縁に沿う第２の切断予定ラインが、第１の有効部に向かって、第１の有効部の外縁に沿う第１の切断予定ラインに突き当たっている場合において、第１の有効部に損傷が生じるのを防止しつつ、各切断予定ラインに沿って改質領域を形成することができるレーザ加工方法を提供することを課題とする。 Therefore, according to the present invention, the second scheduled cutting line along the outer edge of the second effective portion hits the first planned cutting line along the outer edge of the first effective portion toward the first effective portion. In this case, it is an object to provide a laser processing method capable of forming a modified region along each scheduled cutting line while preventing the first effective portion from being damaged.
上記課題を解決するために、本発明のレーザ加工方法は、板状の加工対象物から少なくとも第１の有効部及び第２の有効部を切り出すためのレーザ加工方法であって、第１の有効部の外縁に沿う第１の切断予定ラインに沿って、レーザ光の集光点を相対的に移動させることにより、第１の切断予定ラインに沿って加工対象物の内部に第１の改質領域を形成する第１の工程と、第１の工程の後に、第２の有効部の外縁に沿いかつ第１の有効部に向かって第１の切断予定ラインに突き当たる第２の切断予定ラインに沿って、レーザ光の集光点を相対的に移動させることにより、第２の切断予定ラインに沿って加工対象物の内部に第２の改質領域を形成する第２の工程と、を備え、第２の工程においては、第２の切断予定ラインのうち第１の切断予定ラインから所定の距離の部分を除いた部分に、第２の改質領域を形成し、 かつ、第２の改質領域の形成に伴って発生し第２の切断予定ラインに沿って伸展する亀裂を、第１の改質領域又は第１の改質領域の形成に伴って発生する亀裂が受け止められる位置に、第１の改質領域及び第２の改質領域を形成し、さらに、第１の切断予定ラインが有効部と非有効部との境界に沿うもので、第２の切断予定ラインが非有効部に向かって第１の切断予定ラインに突き当たる場合には、第２の切断予定ラインには改質領域を形成しない部分を設けずに、第１の改質領域に対して第２の改質領域を交差させることを特徴とする。 In order to solve the above problems, a laser processing method of the present invention is a laser processing method for cutting out at least a first effective portion and a second effective portion from a plate-like workpiece, and includes a first effective portion. A first modification is formed inside the workpiece along the first scheduled cutting line by relatively moving the laser light focusing point along the first scheduled cutting line along the outer edge of the part. A first step of forming a region, and after the first step, on a second scheduled cutting line that strikes the first scheduled cutting line along the outer edge of the second effective portion and toward the first effective portion A second step of forming a second modified region in the workpiece along the second scheduled cutting line by relatively moving the condensing point of the laser beam along the second cutting line. In the second step, the first cutting schedule is selected from the second scheduled cutting lines. The portion excluding the portion of the predetermined distance from the line, cracking the second modified region is formed, and, extending along a second line to cut occurs with the formation of the second modified region The first modified region and the second modified region are formed at a position where a crack generated along with the formation of the first modified region or the first modified region is received. When the planned cutting line is along the boundary between the effective part and the non-effective part, and the second scheduled cutting line hits the first planned cutting line toward the non-effective part, the second scheduled cutting line Is characterized in that the second modified region intersects the first modified region without providing a portion where the modified region is not formed .
このレーザ加工方法では、まず、第１の切断予定ラインに沿って第１の改質領域を形成し、その後に、第２の切断予定ラインに沿って第２の改質領域を形成する。そのため、第２の改質領域の形成に伴って、第２の改質領域から亀裂が発生し、その亀裂が第１の有効部に向かって伸展しそうになっても、その亀裂の伸展は、既に形成された第１の改質領域及び第１の改質領域から発生した亀裂の少なくとも一方によって受け止められる。よって、このレーザ加工方法によれば、第２の有効部の外縁に沿う第２の切断予定ラインが、第１の有効部に向かって、第１の有効部の外縁に沿う第１の切断予定ラインに突き当たっている場合において、第１の有効部に損傷が生じるのを防止しつつ、各切断予定ラインに沿って改質領域を形成することができる。 In this laser processing method, first, a first modified region is formed along a first scheduled cutting line, and then a second modified region is formed along a second scheduled cutting line. Therefore, with the formation of the second modified region, a crack is generated from the second modified region, and even if the crack is likely to extend toward the first effective portion, the extension of the crack is It is received by at least one of the first modified region and the crack generated from the first modified region. Therefore, according to this laser processing method, the second scheduled cutting line along the outer edge of the second effective portion is directed to the first effective portion along the outer edge of the first effective portion toward the first effective portion. In the case of hitting the line, it is possible to form the modified region along each scheduled cutting line while preventing the first effective portion from being damaged.
ここで、第２の工程においては、第２の切断予定ラインのうち第１の切断予定ラインから所定の距離の部分を除いた部分に、第２の改質領域を形成する。これによれば、第２の切断予定ラインのうち第１の切断予定ラインから所定の距離の部分には改質領域が形成されない。従って、第２の改質領域の形成に伴って、第１の切断予定ラインの近傍で第２の改質領域から亀裂が発生するのを防止し、第２の改質領域から発生した亀裂が第１の有効部に向かって伸展するのを抑制することができる。 Here, in the second step, the second modified region is formed in a portion of the second scheduled cutting line excluding a portion at a predetermined distance from the first scheduled cutting line . According to this, the modified region is not formed in a portion of the second scheduled cutting line at a predetermined distance from the first scheduled cutting line. Accordingly, the formation of the second modified region prevents the second modified region from generating a crack in the vicinity of the first scheduled cutting line, and the crack generated from the second modified region is prevented. The extension toward the first effective portion can be suppressed.
また、第１の切断予定ライン及び第２の切断予定ラインのそれぞれに対して、加工対象物の厚さ方向に並ぶように複数列の改質領域を形成する場合には、少なくとも加工対象物のレーザ光入射面に最も近い改質領域を第１の改質領域及び第２の改質領域として形成すればよい。改質領域の形成に伴う亀裂の発生は、レーザ光入射面から遠い改質領域よりもレーザ光入射面に近い改質領域で起こり易い。従って、少なくともレーザ光入射面に最も近い改質領域を、上述した第１の改質領域及び第２の改質領域として形成すれば、第１の有効部に損傷が生じるのを防止することができる。 Further, in the case of forming a plurality of rows of modified regions so as to be aligned in the thickness direction of the object to be processed for each of the first scheduled cutting line and the second scheduled cutting line, at least the processed object The modified regions closest to the laser light incident surface may be formed as the first modified region and the second modified region. The generation of cracks accompanying the formation of the modified region is more likely to occur in the modified region closer to the laser light incident surface than the modified region far from the laser light incident surface. Therefore, if at least the modified regions closest to the laser light incident surface are formed as the first modified region and the second modified region described above, it is possible to prevent the first effective portion from being damaged. it can.
また、第２の工程の後に、第１の改質領域及び第２の改質領域から発生した亀裂を加工対象物の表面及び裏面に到達させることにより、第１の切断予定ライン及び第２の切断予定ラインに沿って加工対象物を切断する第３の工程を更に備えることが好ましい。これによれば、第１の有効部及び第２の有効部を加工対象物から精度良く切り出すことができる。 In addition, after the second step, the cracks generated from the first modified region and the second modified region reach the front surface and the back surface of the workpiece, so that the first scheduled cutting line and the second modified line It is preferable to further include a third step of cutting the workpiece along the scheduled cutting line. According to this, the 1st effective part and the 2nd effective part can be accurately cut out from a processing object.
本発明によれば、第２の有効部の外縁に沿う第２の切断予定ラインが、第１の有効部に向かって、第１の有効部の外縁に沿う第１の切断予定ラインに突き当たっている場合において、第１の有効部に損傷が生じるのを防止しつつ、各切断予定ラインに沿って改質領域を形成することができる。 According to the present invention, the second scheduled cutting line along the outer edge of the second effective portion hits the first planned cutting line along the outer edge of the first effective portion toward the first effective portion. In this case, the modified region can be formed along each scheduled cutting line while preventing the first effective portion from being damaged.
以下、本発明の好適な実施形態について、図面を参照して詳細に説明する。なお、各図において同一又は相当部分には同一符号を付し、重複する説明を省略する。 DESCRIPTION OF EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. In addition, in each figure, the same code | symbol is attached | subjected to the same or an equivalent part, and the overlapping description is abbreviate | omitted.
本発明の一実施形態のレーザ加工方法では、切断予定ラインに沿って加工対象物にレーザ光を照射することにより、切断予定ラインに沿って加工対象物の内部に改質領域を形成する。そこで、まず、この改質領域の形成について、図１〜図６を参照して説明する。 In the laser processing method of one embodiment of the present invention, the modified region is formed inside the processing object along the planned cutting line by irradiating the processing target with laser light along the planned cutting line. First, the formation of the modified region will be described with reference to FIGS.
図１に示すように、レーザ加工装置１００は、レーザ光Ｌをパルス発振するレーザ光源１０１と、レーザ光Ｌの光軸（光路）の向きを９０°変えるように配置されたダイクロイックミラー１０３と、レーザ光Ｌを集光するための集光用レンズ１０５と、を備えている。また、レーザ加工装置１００は、集光用レンズ１０５で集光されたレーザ光Ｌが照射される加工対象物１を支持するための支持台１０７と、支持台１０７を移動させるためのステージ１１１と、レーザ光Ｌの出力やパルス幅等を調節するためにレーザ光源１０１を制御するレーザ光源制御部１０２と、ステージ１１１の移動を制御するステージ制御部１１５と、を備えている。 As shown in FIG. 1, a laser processing apparatus 100 includes a laser light source 101 that oscillates a laser beam L, a dichroic mirror 103 that is arranged so as to change the direction of the optical axis (optical path) of the laser beam L, and A condensing lens 105 for condensing the laser light L. Further, the laser processing apparatus 100 includes a support base 107 for supporting the workpiece 1 irradiated with the laser light L condensed by the condensing lens 105, and a stage 111 for moving the support base 107. And a laser light source control unit 102 for controlling the laser light source 101 to adjust the output of the laser light L, the pulse width, and the like, and a stage control unit 115 for controlling the movement of the stage 111.
このレーザ加工装置１００においては、レーザ光源１０１から出射されたレーザ光Ｌは、ダイクロイックミラー１０３によってその光軸の向きを９０°変えられ、支持台１０７上に載置された加工対象物１の内部に集光用レンズ１０５によって集光される。これと共に、ステージ１１１が移動させられ、加工対象物１がレーザ光Ｌに対して切断予定ライン５に沿って相対移動させられる。これにより、切断予定ライン５に沿った改質領域が加工対象物１に形成されることとなる。 In this laser processing apparatus 100, the laser light L emitted from the laser light source 101 has its optical axis changed by 90 ° by the dichroic mirror 103, and the inside of the processing object 1 placed on the support base 107. The light is condensed by the condensing lens 105. At the same time, the stage 111 is moved, and the workpiece 1 is moved relative to the laser beam L along the planned cutting line 5. As a result, a modified region along the planned cutting line 5 is formed on the workpiece 1.
加工対象物１としては、半導体材料や圧電材料等が用いられ、図２に示すように、加工対象物１には、加工対象物１を切断するための切断予定ライン５が設定されている。切断予定ライン５は、直線状に延びた仮想線である。加工対象物１の内部に改質領域を形成する場合、図３に示すように、加工対象物１の内部に集光点Ｐを合わせた状態で、レーザ光Ｌを切断予定ライン５に沿って（すなわち、図２の矢印Ａ方向に）相対的に移動させる。これにより、図４〜図６に示すように、改質領域７が切断予定ライン５に沿って加工対象物１の内部に形成され、切断予定ライン５に沿って形成された改質領域７が切断起点領域８となる。 As the processing object 1, a semiconductor material, a piezoelectric material, or the like is used. As shown in FIG. 2, a cutting scheduled line 5 for cutting the processing object 1 is set in the processing object 1. The planned cutting line 5 is a virtual line extending linearly. When forming a modified region inside the workpiece 1, as shown in FIG. 3, the laser beam L is projected along the planned cutting line 5 in a state where the focused point P is aligned with the inside of the workpiece 1. It moves relatively (that is, in the direction of arrow A in FIG. 2). Thereby, as shown in FIGS. 4 to 6, the modified region 7 is formed inside the workpiece 1 along the planned cutting line 5, and the modified region 7 formed along the planned cutting line 5 is formed. It becomes the cutting start area 8.
なお、集光点Ｐとは、レーザ光Ｌが集光する箇所のことである。また、切断予定ライン５は、直線状に限らず曲線状であってもよいし、仮想線に限らず加工対象物１の表面３に実際に引かれた線であってもよい。また、改質領域７は、連続的に形成される場合もあるし、断続的に形成される場合もある。また、改質領域７は列状でも点状でもよく、要は、改質領域７は少なくとも加工対象物１の内部に形成されていればよい。また、改質領域７を起点に亀裂が形成される場合があり、亀裂及び改質領域７は、加工対象物１の外表面（表面、裏面、若しくは外周面）に露出していてもよい。 In addition, the condensing point P is a location where the laser light L is condensed. Further, the planned cutting line 5 is not limited to a straight line, but may be a curved line, or may be a line actually drawn on the surface 3 of the workpiece 1 without being limited to a virtual line. In addition, the modified region 7 may be formed continuously or intermittently. Further, the modified region 7 may be in the form of a line or a dot. In short, the modified region 7 only needs to be formed at least inside the workpiece 1. In addition, a crack may be formed starting from the modified region 7, and the crack and modified region 7 may be exposed on the outer surface (front surface, back surface, or outer peripheral surface) of the workpiece 1.
ちなみに、ここでのレーザ光Ｌは、加工対象物１を透過すると共に加工対象物１の内部の集光点近傍にて特に吸収され、これにより、加工対象物１に改質領域７が形成される（すなわち、内部吸収型レーザ加工）。よって、加工対象物１の表面３ではレーザ光Ｌが殆ど吸収されないので、加工対象物１の表面３が溶融することはない。一般的に、表面３から溶融され除去されて穴や溝等の除去部が形成される（表面吸収型レーザ加工）場合、加工領域は表面３側から徐々に裏面側に進行する。 Incidentally, the laser light L here passes through the workpiece 1 and is particularly absorbed near the condensing point inside the workpiece 1, thereby forming the modified region 7 in the workpiece 1. (Ie, internal absorption laser processing). Therefore, since the laser beam L is hardly absorbed by the surface 3 of the workpiece 1, the surface 3 of the workpiece 1 is not melted. In general, when a removed portion such as a hole or a groove is formed by being melted and removed from the front surface 3 (surface absorption laser processing), the processing region gradually proceeds from the front surface 3 side to the back surface side.
ところで、本実施形態で形成される改質領域は、密度、屈折率、機械的強度やその他の物理的特性が周囲とは異なる状態になった領域をいう。改質領域としては、例えば、溶融処理領域、クラック領域、絶縁破壊領域、屈折率変化領域等があり、これらが混在した領域もある。更に、改質領域としては、加工対象物の材料において改質領域の密度が非改質領域の密度と比較して変化した領域や、格子欠陥が形成された領域がある（これらをまとめて高密転移領域ともいう）。 By the way, the modified region formed in the present embodiment refers to a region where the density, refractive index, mechanical strength, and other physical characteristics are different from the surroundings. Examples of the modified region include a melt treatment region, a crack region, a dielectric breakdown region, a refractive index change region, and the like, and there is a region where these are mixed. Furthermore, as the modified region, there are a region in which the density of the modified region in the material to be processed is changed as compared with the density of the non-modified region, and a region in which lattice defects are formed (collectively these are high-density regions). Also known as the metastatic region).
また、溶融処理領域や屈折率変化領域、改質領域の密度が非改質領域の密度と比較して変化した領域、格子欠陥が形成された領域は、更に、それら領域の内部や改質領域と非改質領域との界面に亀裂（割れ、マイクロクラック）を内包している場合がある。内包される亀裂は改質領域の全面に渡る場合や一部分のみや複数部分に形成される場合がある。加工対象物１としては、例えばシリコン、ガラス、ＬｉＴａＯ３又はサファイア（Ａｌ２Ｏ３）を含む、又はこれらからなるものが挙げられる。 In addition, the area where the density of the melt treatment area, the refractive index change area, the modified area has changed compared to the density of the non-modified area, and the area where lattice defects are formed are further included in these areas or the modified areas In some cases, cracks (cracks, microcracks) are included in the interface between the non-modified region and the non-modified region. The included crack may be formed over the entire surface of the modified region, or may be formed in only a part or a plurality of parts. Examples of the processing object 1 include those containing or consisting of silicon, glass, LiTaO 3 or sapphire (Al 2 O 3 ).
また、本実施形態においては、切断予定ライン５に沿って改質スポット（加工痕）を複数形成することによって、改質領域７を形成している。改質スポットとは、パルスレーザ光の１パルスのショット（つまり１パルスのレーザ照射：レーザショット）で形成される改質部分であり、改質スポットが集まることにより改質領域７となる。改質スポットとしては、クラックスポット、溶融処理スポット若しくは屈折率変化スポット、又はこれらの少なくとも１つが混在するもの等が挙げられる。 Further, in the present embodiment, the modified region 7 is formed by forming a plurality of modified spots (processing marks) along the planned cutting line 5. The modified spot is a modified portion formed by one pulse shot of pulsed laser light (that is, one pulse of laser irradiation: laser shot). Examples of the modified spot include a crack spot, a melting treatment spot, a refractive index change spot, or a mixture of at least one of these.
この改質スポットについては、要求される切断精度、要求される切断面の平坦性、加工対象物の厚さ、種類、結晶方位等を考慮して、その大きさや発生する亀裂の長さを適宜制御することが好ましい。 Considering the required cutting accuracy, required flatness of the cut surface, thickness of the workpiece, type, crystal orientation, etc., the size of the modified spot and the length of the crack to be generated are appropriately determined. It is preferable to control.
次に、本発明の一実施形態のレーザ加工方法について詳細に説明する。図７は、本発明の一実施形態のレーザ加工方法の対象となる加工対象物の平面図である。図７に示すように、加工対象物１は、シリコンウェハ１１と、複数の機能素子１５を含んでシリコンウェハ１１上に形成された機能素子層１６と、を備えている。加工対象物１は、機能素子層１６側の面を表面３とし、機能素子層１６と反対側の面を裏面４とする板状のものである。機能素子１５は、例えば、結晶成長により形成された半導体動作層、フォトダイオード等の受光素子、レーザダイオード等の発光素子、或いは回路として形成された回路素子等である。 Next, the laser processing method of one embodiment of the present invention will be described in detail. FIG. 7 is a plan view of a workpiece to be processed by the laser processing method according to the embodiment of the present invention. As shown in FIG. 7, the workpiece 1 includes a silicon wafer 11 and a functional element layer 16 formed on the silicon wafer 11 including a plurality of functional elements 15. The workpiece 1 is a plate-like object having the surface on the functional element layer 16 side as the front surface 3 and the surface on the opposite side to the functional element layer 16 as the back surface 4. The functional element 15 is, for example, a semiconductor operation layer formed by crystal growth, a light receiving element such as a photodiode, a light emitting element such as a laser diode, or a circuit element formed as a circuit.
機能素子１５は、長方形状の有効部１８ごとに形成されている。各有効部１８は、加工対象物１の切断によって取得される半導体チップに対応する。有効部１８は、シリコンウェハ１１のオリエンテーションフラット６に平行な方向が長辺の方向となるように（すなわち、オリエンテーションフラット６に垂直な方向が短辺の方向となるように）配置されている。更に、有効部１８は、行方向（オリエンテーションフラット６に平行な方向）においては一列に配置されている一方で、列方向（オリエンテーションフラット６に垂直な方向）においてはジグザグ状に配置されている。これは、１枚のシリコンウェハ１１からの半導体チップの取得数を増加させるためである。 The functional element 15 is formed for each rectangular effective portion 18. Each effective part 18 corresponds to a semiconductor chip acquired by cutting the workpiece 1. The effective portion 18 is arranged such that the direction parallel to the orientation flat 6 of the silicon wafer 11 is the long side direction (that is, the direction perpendicular to the orientation flat 6 is the short side direction). Further, the effective portions 18 are arranged in a line in the row direction (direction parallel to the orientation flat 6), while being arranged in a zigzag shape in the column direction (direction perpendicular to the orientation flat 6). This is to increase the number of semiconductor chips acquired from one silicon wafer 11.
これにより、列方向において隣り合う２つの有効部１８では、一方の有効部１８の短辺に沿う切断予定ライン５２が、他方の有効部１８に向かって、その他方の有効部１８の長辺に沿う切断予定ライン５１の中間部分に突き当たることになる。なお、加工対象物１の外縁部において有効部１８を配置し得ない部分は、非有効部１９となっている。 Thereby, in the two effective portions 18 adjacent in the column direction, the planned cutting line 52 along the short side of one effective portion 18 is directed to the long side of the other effective portion 18 toward the other effective portion 18. It hits the middle part of the scheduled cutting line 51 along. A portion where the effective portion 18 cannot be disposed on the outer edge portion of the workpiece 1 is a non-effective portion 19.
以上の加工対象物１から、次のように、複数の有効部１８を切り出す。まず、加工対象物１の裏面４にエキスパンドテープを貼り付けて、その加工対象物１をレーザ加工装置１００の支持台１０７上に載置する。そして、加工対象物１の表面３から所定距離だけ内側にレーザ光Ｌの集光点Ｐが位置するようにステージ１１１を制御する。 A plurality of effective portions 18 are cut out from the workpiece 1 as described above. First, an expand tape is affixed on the back surface 4 of the workpiece 1, and the workpiece 1 is placed on the support 107 of the laser processing apparatus 100. Then, the stage 111 is controlled so that the condensing point P of the laser light L is located inward from the surface 3 of the workpiece 1 by a predetermined distance.
続いて、加工対象物１の表面３をレーザ光入射面として、切断予定ライン５１に沿って加工対象物１にレーザ光Ｌを照射する。つまり、有効部１８の長辺に沿う切断予定ライン５１に沿って、レーザ光Ｌの集光点Ｐを相対的に移動（スキャン）させる。ここでは、ステージ１１１を制御してレーザ光Ｌのスキャンを行う。このレーザ光Ｌの照射によって、図８に示すように、切断予定ライン５１に沿って加工対象物１の内部に改質領域７１を形成する。 Subsequently, the processing object 1 is irradiated with the laser beam L along the scheduled cutting line 51 using the surface 3 of the processing object 1 as the laser light incident surface. That is, the condensing point P of the laser light L is relatively moved (scanned) along the planned cutting line 51 along the long side of the effective portion 18. Here, the stage 111 is controlled to scan the laser light L. By this laser light L irradiation, a modified region 71 is formed inside the workpiece 1 along the planned cutting line 51 as shown in FIG.
切断予定ライン５１に沿って改質領域７１を形成した後、加工対象物１の表面３をレーザ光入射面として、切断予定ライン５２に沿って加工対象物１にレーザ光Ｌを照射する。つまり、有効部１８の短辺に沿う切断予定ライン５２に沿って、レーザ光Ｌの集光点Ｐを相対的に移動させる。このレーザ光Ｌの照射によって、図９に示すように、切断予定ライン５２に沿って加工対象物１の内部に改質領域７２を形成する。 After forming the modified region 71 along the planned cutting line 51, the processing target 1 is irradiated with the laser beam L along the planned cutting line 52 using the surface 3 of the processing target 1 as the laser light incident surface. That is, the condensing point P of the laser light L is relatively moved along the planned cutting line 52 along the short side of the effective portion 18. By this irradiation with the laser beam L, a modified region 72 is formed inside the workpiece 1 along the planned cutting line 52 as shown in FIG.
このとき、レーザ光Ｌの照射をＯＮ／ＯＦＦ切替えすることにより、切断予定ライン５２のうち切断予定ライン５１から所定の距離の端部分５２ａを除いた中間部分５２ｂに、改質領域７２を形成するようにする。その所定の距離に相当する端部分５２ａの長さは、改質領域７２の形成に伴って（すなわち、改質領域７２の形成と略同時に）、改質領域７２から発生した亀裂が切断予定ライン５２の方向に伸展する距離の範囲とすることが好ましく、例えば１０μｍ程度である。なお、有効部１８と非有効部１９との境界に沿う切断予定ライン５１に対しては、改質領域７２を形成しない端部分５２ａを設けずに、改質領域７１に対して改質領域７２を交差させる。 At this time, by changing ON / OFF the irradiation of the laser beam L, the modified region 72 is formed in the intermediate portion 52b of the planned cutting line 52 excluding the end portion 52a at a predetermined distance from the planned cutting line 51. Like that. The length of the end portion 52a corresponding to the predetermined distance is such that a crack generated from the modified region 72 is scheduled to be cut along with the formation of the modified region 72 (that is, substantially simultaneously with the formation of the modified region 72). It is preferable that the distance extends in the direction of 52, for example, about 10 μm. In addition, with respect to the scheduled cutting line 51 along the boundary between the effective portion 18 and the non-effective portion 19, the modified region 72 is not formed with the modified region 72 but the modified region 72 is not provided. Cross.
切断予定ライン５２に沿って改質領域７２を形成した後、加工対象物１の裏面４に貼り付けられているエキスパンドテープを拡張させて、改質領域７１，７２から発生した亀裂を加工対象物１の表面３及び裏面４に到達させることにより、切断予定ライン５１，５２に沿って加工対象物１を切断する。これにより、図１０に示すように、加工対象物１から複数の有効部１８が切り出されて、機能素子１５を有する複数の半導体チップ２５が得られる。 After the modified region 72 is formed along the scheduled cutting line 52, the expanded tape attached to the back surface 4 of the workpiece 1 is expanded, and cracks generated from the modified regions 71 and 72 are processed. 1, the workpiece 1 is cut along the scheduled cutting lines 51 and 52. As a result, as shown in FIG. 10, a plurality of effective portions 18 are cut out from the workpiece 1, and a plurality of semiconductor chips 25 having functional elements 15 are obtained.
以上説明したように、一方の有効部１８の短辺に沿う切断予定ライン５２が、他方の有効部１８に向かって、その他方の有効部１８の長辺に沿う切断予定ライン５１の中間部分に突き当たっている場合には、まず、長辺に沿う切断予定ライン５１に沿って改質領域７１を形成し、その後に、短辺に沿う切断予定ライン５２に沿って改質領域７２を形成する。これにより、図１１に示すように、改質領域７２の形成に伴って、改質領域７２から亀裂１７が発生し、その亀裂１７が他方の有効部１８に向かって伸展しそうになっても、その亀裂１７の伸展は、既に形成された改質領域７１や、改質領域７１から発生した亀裂１７によって受け止められる。よって、各有効部１８に損傷が生じるのを防止しつつ、各切断予定ライン５１，５２に沿って改質領域７１，７２を形成することができる。 As described above, the planned cutting line 52 along the short side of one effective part 18 is directed toward the other effective part 18 at the intermediate portion of the planned cutting line 51 along the long side of the other effective part 18. In the case of abutting, first, the modified region 71 is formed along the planned cutting line 51 along the long side, and then the modified region 72 is formed along the planned cutting line 52 along the short side. As a result, as shown in FIG. 11, along with the formation of the modified region 72, a crack 17 is generated from the modified region 72, and the crack 17 is likely to extend toward the other effective portion 18, The extension of the crack 17 is received by the modified region 71 that has already been formed and the crack 17 that has occurred from the modified region 71. Therefore, it is possible to form the modified regions 71 and 72 along the scheduled cutting lines 51 and 52 while preventing the effective portions 18 from being damaged.
なお、ここでの亀裂１７は、改質領域７１，７２の形成に伴って（加工対象物１に何ら外力を作用させなくても）、改質領域７１，７２から加工対象物１の厚さ方向及び切断予定ライン５１，５２の方向に発生するものである。 In addition, the crack 17 here is the thickness of the workpiece 1 from the modified regions 71 and 72 with the formation of the modified regions 71 and 72 (even if no external force is applied to the workpiece 1). It occurs in the direction and the direction of the scheduled cutting lines 51 and 52.
また、図１１に示すように、短辺に沿う切断予定ライン５２に沿って改質領域７２を形成するときには、切断予定ライン５２の中間部分５２ｂに改質領域７２を形成し、切断予定ライン５２の端部分５２ａには、改質領域７２を形成しない。これにより、改質領域７２の形成に伴って、長辺に沿う切断予定ライン５１の近傍で改質領域７２から亀裂１７が発生するのを防止し、改質領域７２から発生した亀裂１７が他方の有効部１８に向かって伸展するのを抑制することができる。 As shown in FIG. 11, when the modified region 72 is formed along the planned cutting line 52 along the short side, the modified region 72 is formed in the intermediate portion 52 b of the planned cutting line 52, and the planned cutting line 52 is formed. The modified region 72 is not formed in the end portion 52a. This prevents the crack 17 from being generated from the modified region 72 in the vicinity of the planned cutting line 51 along the long side as the modified region 72 is formed. It is possible to suppress extension toward the effective portion 18 of the.
また、改質領域７１，７２から発生した亀裂１７を加工対象物１の表面３及び裏面４に到達させることにより、切断予定ライン５１，５２に沿って加工対象物１を切断するので、各有効部１８を加工対象物１から精度良く切り出すことができる。このとき、有効部１８と非有効部１９との境界に位置する有効部１８の角部では、改質領域７１と改質領域７２とが交差しているので、その有効部１８の角部に損傷が生じるのを防止することができる。 Further, since the crack 17 generated from the modified regions 71 and 72 reaches the front surface 3 and the back surface 4 of the workpiece 1, the workpiece 1 is cut along the scheduled cutting lines 51 and 52. The part 18 can be accurately cut out from the workpiece 1. At this time, at the corner of the effective portion 18 located at the boundary between the effective portion 18 and the non-effective portion 19, the modified region 71 and the modified region 72 intersect with each other. Damage can be prevented from occurring.
図１２は、切断予定ライン５１，５２に沿って改質領域７１，７２を形成した後、かつ加工対象物１の裏面４に貼り付けられているエキスパンドテープを拡張させる前における加工対象物１の平面写真を示す図である。図１２に示すように、この場合には、改質領域７１，７２の形成に伴って改質領域７１，７２から発生した亀裂１７が加工対象物１の表面３に達したが、切断予定ライン５２に沿った亀裂１７の伸展は、切断予定ライン５１に沿った改質領域７１や亀裂１７によって受け止められた。 FIG. 12 shows the processing target 1 after forming the modified regions 71 and 72 along the scheduled cutting lines 51 and 52 and before expanding the expanded tape attached to the back surface 4 of the processing target 1. It is a figure which shows a plane photograph. As shown in FIG. 12, in this case, the crack 17 generated from the modified regions 71 and 72 with the formation of the modified regions 71 and 72 has reached the surface 3 of the workpiece 1. The extension of the crack 17 along the line 52 was received by the modified region 71 and the crack 17 along the planned cutting line 51.
図１３は、図１２の加工対象物１の裏面４に貼り付けられているエキスパンドテープを拡張させた後の加工対象物の平面写真を示す図である。図１３に示すように、各有効部１８に損傷が生じるものを防止して、複数の半導体チップ２５を加工対象物１から精度良く切り出すことができた。図１４は、半導体チップ２５の切断面２５ａの写真を示す図である。図１４に示すように、切断予定ライン５２の中間部分５２ｂには改質領域７２を形成し、切断予定ライン５２の端部分５２ａには改質領域７２を形成しなかったが、加工対象物１が切断予定ライン５２に沿って精度良く切断された。なお、図１２において、改質領域７２が形成されていない端部分５２ａの長さは、約１０μｍである。 FIG. 13 is a diagram illustrating a plan photograph of the processing object after the expand tape attached to the back surface 4 of the processing object 1 in FIG. 12 is expanded. As shown in FIG. 13, it was possible to prevent the effective portions 18 from being damaged and to cut out the plurality of semiconductor chips 25 from the workpiece 1 with high accuracy. FIG. 14 is a view showing a photograph of the cut surface 25 a of the semiconductor chip 25. As shown in FIG. 14, the modified region 72 is formed in the intermediate portion 52b of the planned cutting line 52 and the modified region 72 is not formed in the end portion 52a of the planned cutting line 52. Was cut along the scheduled cutting line 52 with high accuracy. In FIG. 12, the length of the end portion 52a where the modified region 72 is not formed is about 10 μm.
以上、本発明の一実施形態について説明したが、本発明は、上記実施形態に限定されるものではない。例えば、各切断予定ライン５１，５２に対して形成される改質領域７１，７２の列数は、１列に限定されず、複数列であってもよい。その列数は、加工対象物１の厚さ等に応じて適宜決定することができる。 Although one embodiment of the present invention has been described above, the present invention is not limited to the above embodiment. For example, the number of columns of the modified regions 71 and 72 formed for each of the scheduled cutting lines 51 and 52 is not limited to one column, and may be a plurality of columns. The number of rows can be appropriately determined according to the thickness of the workpiece 1 or the like.
図１５に示すように、各切断予定ライン５１，５２に対して、加工対象物１の厚さ方向に並ぶように複数列の改質領域７１，７２を形成する場合にも、まず、長辺に沿う切断予定ライン５１に沿って複数列の改質領域７１を形成し、その後に、短辺に沿う切断予定ライン５２に沿って複数列の改質領域７２を形成すればよい。そして、短辺に沿う切断予定ライン５２に沿って改質領域７２を形成するときには、切断予定ライン５２の中間部分５２ｂに改質領域７２を形成し、切断予定ライン５２の端部分５２ａには、改質領域７２を形成しなければよい。これらにより、各有効部１８に損傷が生じるのを防止しつつ、各切断予定ライン５１，５２に沿って改質領域７１，７２を形成することができる。 As shown in FIG. 15, in the case where a plurality of rows of modified regions 71 and 72 are formed so as to be aligned in the thickness direction of the workpiece 1 with respect to the respective scheduled cutting lines 51 and 52, first, long sides A plurality of rows of modified regions 71 may be formed along the planned cutting lines 51 along the lines, and then a plurality of rows of modified regions 72 may be formed along the planned cutting lines 52 along the short sides. When the modified region 72 is formed along the planned cutting line 52 along the short side, the modified region 72 is formed in the intermediate portion 52b of the planned cutting line 52, and the end portion 52a of the planned cutting line 52 is The modified region 72 may not be formed. Thus, it is possible to form the modified regions 71 and 72 along the scheduled cutting lines 51 and 52 while preventing the effective portions 18 from being damaged.
ただし、少なくとも加工対象物１のレーザ光入射面（ここでは、表面３）に最も近い改質領域７１，７２について、改質領域７１を形成した後に改質領域７２を形成し、更に、切断予定ライン５２の端部分５２ａに改質領域７２を形成しなければ、各有効部１８に損傷が生じるのを防止しつつ、各切断予定ライン５１，５２に沿って改質領域７１，７２を形成することができる場合もある。改質領域７１，７２の形成に伴う亀裂１７の発生は、レーザ光入射面から遠い改質領域７１，７２よりもレーザ光入射面に近い改質領域７１，７２で起こり易いからである。これは、次のような形成順序をとる場合に有効である。すなわち、まず、加工対象物１のレーザ光入射面から最も遠い改質領域７１，７２を全ての切断予定ライン５１，５２について形成し、その後、加工対象物１のレーザ光入射面からの距離ごとに改質領域７１，７２を全ての切断予定ライン５１，５２について形成していくような場合である。 However, at least the modified regions 71 and 72 closest to the laser light incident surface (here, the surface 3) of the workpiece 1 are formed after the modified region 71 is formed, and further scheduled for cutting. If the modified region 72 is not formed in the end portion 52a of the line 52, the modified regions 71 and 72 are formed along the scheduled cutting lines 51 and 52 while preventing the effective portions 18 from being damaged. Sometimes you can. This is because the generation of the crack 17 accompanying the formation of the modified regions 71 and 72 is more likely to occur in the modified regions 71 and 72 closer to the laser light incident surface than the modified regions 71 and 72 far from the laser light incident surface. This is effective when the following formation order is taken. That is, first, the modified regions 71 and 72 farthest from the laser light incident surface of the workpiece 1 are formed for all the scheduled cutting lines 51 and 52, and thereafter, every distance from the laser light incident surface of the workpiece 1. In this case, the modified regions 71 and 72 are formed for all the planned cutting lines 51 and 52.
また、上記実施形態では、エキスパンドテープの拡張により加工対象物１に外力を作用させて、亀裂１７を加工対象物１の表面３及び裏面４に到達させたが、これに限定されない。各切断予定ライン５１，５２に対する１列又は複数列の改質領域７１，７２の形成と共に（加工対象物１に何ら外力を作用させずに）、加工対象物１の表面３及び裏面４に亀裂１７を到達させて、それにより、切断予定ライン５１，５２に沿って加工対象物１を切断する場合もある。 Moreover, in the said embodiment, the external force was made to act on the workpiece 1 by the expansion of the expanded tape, and the crack 17 reached the surface 3 and the back surface 4 of the workpiece 1, but it is not limited to this. Along with the formation of one or a plurality of modified regions 71 and 72 for each of the scheduled cutting lines 51 and 52 (without applying any external force to the workpiece 1), the front surface 3 and the back surface 4 of the workpiece 1 are cracked. In some cases, the workpiece 1 is cut along the scheduled cutting lines 51 and 52.
１…加工対象物、３…表面、４…裏面、１７…亀裂、１８…有効部、５１，５２…切断予定ライン、５２ａ…端部分、５２ｂ…中間部分、７１，７２…改質領域、Ｌ…レーザ光、Ｐ…集光点。 DESCRIPTION OF SYMBOLS 1 ... Work object, 3 ... Front surface, 4 ... Back surface, 17 ... Crack, 18 ... Effective part, 51, 52 ... Planned cutting line, 52a ... End part, 52b ... Middle part, 71, 72 ... Modified area | region, L ... Laser beam, P ... Condensing point.
Claims (3)
前記第１の有効部の外縁に沿う第１の切断予定ラインに沿って、レーザ光の集光点を相対的に移動させることにより、前記第１の切断予定ラインに沿って前記加工対象物の内部に第１の改質領域を形成する第１の工程と、
前記第１の工程の後に、前記第２の有効部の外縁に沿いかつ前記第１の有効部に向かって前記第１の切断予定ラインに突き当たる第２の切断予定ラインに沿って、レーザ光の集光点を相対的に移動させることにより、前記第２の切断予定ラインに沿って前記加工対象物の内部に第２の改質領域を形成する第２の工程と、を備え、
前記第２の工程においては、前記第２の切断予定ラインのうち前記第１の切断予定ラインから所定の距離の部分を除いた部分に、前記第２の改質領域を形成し、
かつ、前記第２の改質領域の形成に伴って発生し前記第２の切断予定ラインに沿って伸展する亀裂を、前記第１の改質領域又は前記第１の改質領域の形成に伴って発生する亀裂が受け止められる位置に、前記第１の改質領域及び前記第２の改質領域を形成し、
さらに、前記第１の切断予定ラインが有効部と非有効部との境界に沿うもので、前記第２の切断予定ラインが非有効部に向かって前記第１の切断予定ラインに突き当たる場合には、前記第２の切断予定ラインには改質領域を形成しない部分を設けずに、前記第１の改質領域に対して前記第２の改質領域を交差させることを特徴とするレーザ加工方法。 A laser processing method for cutting out at least a first effective portion and a second effective portion from a plate-shaped workpiece,
By moving the condensing point of the laser light relatively along the first scheduled cutting line along the outer edge of the first effective portion, the workpiece is moved along the first scheduled cutting line. A first step of forming a first modified region therein;
After the first step, along the second scheduled cutting line that strikes the first scheduled cutting line along the outer edge of the second effective portion and toward the first effective portion, the laser beam A second step of forming a second modified region in the workpiece along the second cutting scheduled line by relatively moving a condensing point , and
In the second step, the second modified region is formed in a portion of the second scheduled cutting line excluding a portion of a predetermined distance from the first planned cutting line,
In addition, a crack that occurs along with the formation of the second modified region and extends along the second scheduled cutting line is caused by the formation of the first modified region or the first modified region. Forming the first modified region and the second modified region at a position where a crack generated by
Further, when the first scheduled cutting line is along the boundary between the effective portion and the ineffective portion, and the second scheduled cutting line hits the first scheduled cutting line toward the ineffective portion. The laser processing method characterized in that the second modified region intersects the first modified region without providing a portion where the modified region is not formed in the second scheduled cutting line. .
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