JP5585750B1 - Cu core ball, solder joint, foam solder, and solder paste - Google Patents
Cu core ball, solder joint, foam solder, and solder paste Download PDFInfo
- Publication number
- JP5585750B1 JP5585750B1 JP2014523134A JP2014523134A JP5585750B1 JP 5585750 B1 JP5585750 B1 JP 5585750B1 JP 2014523134 A JP2014523134 A JP 2014523134A JP 2014523134 A JP2014523134 A JP 2014523134A JP 5585750 B1 JP5585750 B1 JP 5585750B1
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- ball
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- metal layer
- solder
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- 229910000679 solder Inorganic materials 0.000 title claims description 67
- 239000006260 foam Substances 0.000 title claims description 6
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Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0233—Sheets, foils
- B23K35/0238—Sheets, foils layered
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/17—Metallic particles coated with metal
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/302—Cu as the principal constituent
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
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- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/16—Apparatus for electrolytic coating of small objects in bulk
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- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/12—Electroplating: Baths therefor from solutions of nickel or cobalt
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Abstract
Cu核ボールの電極上への実装時のアライメント性を確保しつつ、ソフトエラーの発生を抑制する。
Cu核ボール11は、Cuボール1と、このCuボール1表面を被覆する金属層2とを備える。金属層2は、Ni,Co,Feから選択される1以上の元素からなる。Cuボール1は、純度が99.9%以上99.995%以下であり、Uの含有量が5ppb以下であり、Thの含有量が5ppb以下であり、PbおよびBiの少なくとも一方の含有量の合計量が1ppm以上であり、真球度が0.95以上であり、α線量が0.0200cph/cm2以下である。The occurrence of a soft error is suppressed while ensuring the alignment when mounting the Cu core ball on the electrode.
The Cu core ball 11 includes a Cu ball 1 and a metal layer 2 that covers the surface of the Cu ball 1. The metal layer 2 is made of one or more elements selected from Ni, Co, and Fe. The Cu ball 1 has a purity of 99.9% or more and 99.995% or less, a U content of 5 ppb or less, a Th content of 5 ppb or less, and a content of at least one of Pb and Bi. The total amount is 1 ppm or more, the sphericity is 0.95 or more, and the α dose is 0.0200 cph / cm 2 or less.
Description
本発明は、α線量が少なく、かつ、磁性を有するCu核ボール、はんだ継手、フォームはんだ、およびはんだペーストに関する。 The present invention relates to a Cu core ball, a solder joint, foam solder, and a solder paste having a low α dose and having magnetism.
近年、小型情報機器の発達により、搭載される電子部品では急速な小型化が進行している。電子部品は、小型化の要求により接続端子の狭小化や実装面積の縮小化に対応するため、裏面に電極が設置されたボールグリッドアレイ(以下、「BGA」と称する。)が適用されている。 In recent years, with the development of small information devices, electronic components to be mounted are rapidly downsized. In order to meet the demand for downsizing and the reduction of the connection terminals and the reduction of the mounting area, the electronic component uses a ball grid array (hereinafter referred to as “BGA”) in which electrodes are provided on the back surface. .
BGAを適用した電子部品には、例えば半導体パッケージがある。半導体パッケージでは、電極を有する半導体チップが樹脂で封止されている。半導体チップの電極には、はんだバンプが形成されている。このはんだバンプは、はんだボールを半導体チップの電極に接合することによって形成されている。BGAを適用した半導体パッケージは、加熱により溶融したはんだバンプとプリント基板の導電性ランドが接合することにより、プリント基板に搭載される。また、更なる高密度実装の要求に対応するため、半導体パッケージが高さ方向に積み重ねられた3次元高密度実装が検討されている。 An electronic component to which BGA is applied includes, for example, a semiconductor package. In a semiconductor package, a semiconductor chip having electrodes is sealed with a resin. Solder bumps are formed on the electrodes of the semiconductor chip. This solder bump is formed by joining a solder ball to an electrode of a semiconductor chip. A semiconductor package to which BGA is applied is mounted on a printed board by bonding solder bumps melted by heating and conductive lands of the printed board. Further, in order to meet the demand for further high-density mounting, three-dimensional high-density mounting in which semiconductor packages are stacked in the height direction has been studied.
しかし、3次元高密度実装がなされた半導体パッケージにBGAが適用されると、半導体パッケージの自重によりはんだボールが潰れてしまうことがある。もしそのようなことが起きると、はんだが電極からはみ出し、電極間が接続してしまい、短絡が発生することも考えられる。 However, when BGA is applied to a semiconductor package on which three-dimensional high-density mounting is performed, the solder balls may be crushed by the weight of the semiconductor package. If such a thing occurs, the solder may protrude from the electrodes, the electrodes may be connected, and a short circuit may occur.
そこで、はんだペーストを用いて電子部品の電極上にCuボールを電気的に接合するはんだバンプが検討されている。Cuボールを用いて形成されたはんだバンプは、電子部品がプリント基板に実装される際、半導体パッケージの重量がはんだバンプに加わっても、はんだの融点では溶融しないCuボールにより半導体パッケージを支えることができる。したがって、半導体パッケージの自重によりはんだバンプが潰れることがない。 Therefore, a solder bump for electrically bonding a Cu ball onto an electrode of an electronic component using a solder paste has been studied. Solder bumps formed using Cu balls can support the semiconductor package with Cu balls that do not melt at the melting point of the solder even when the weight of the semiconductor package is applied to the solder bumps when the electronic component is mounted on a printed circuit board. it can. Therefore, the solder bump is not crushed by the weight of the semiconductor package.
Cuボールを電極上に配置する方法として、プリント基板上に配置したマスク部材の開口部にCuボールを振り込む方法が実施されている。この振り込み方法では、振り込み手段によりCuボールを電極に向けて落下させた後、マスク上でCuボールを機械的に移動させることでマスクの開口部内にCuボールを振り込んでいる。振り込み方法は、Cuボールの微小化に伴い、高精度にCuボールを電極上に配置する方法として有効である。 As a method of arranging the Cu ball on the electrode, a method of transferring the Cu ball into the opening of the mask member arranged on the printed circuit board is performed. In this transfer method, after the Cu ball is dropped toward the electrode by the transfer means, the Cu ball is transferred into the opening of the mask by mechanically moving the Cu ball on the mask. The transfer method is effective as a method of arranging the Cu ball on the electrode with high accuracy as the Cu ball is miniaturized.
ところが、従来では、Cuボールを開口部に移動させる際に、ヘラまたは刷毛を用いてCuボールを移動させる機械的な移動を伴うので、ヘラによりはんだボールに損傷や変形が生じたり、刷毛から異物が混入したりするという問題があった。 However, conventionally, when the Cu ball is moved to the opening, it is accompanied by a mechanical movement in which the Cu ball is moved using a spatula or a brush. There was a problem of mixing.
そこで、ボールに磁性を持たせることでボールの実装時の損傷等を回避した振り込み方法が提案されている。たとえば、特許文献1には、はんだボールの表面にNi等の強磁性材料を被覆して磁性を持たせたはんだ核ボールを基板上に散布した後、ステージ内に設けた磁石を移動させることではんだ核ボールを磁力の作用によりマスクの開口部に振り込むはんだボールの配置装置が記載されている。 Therefore, a transfer method has been proposed in which the ball is made magnetic so as to avoid damage or the like during mounting of the ball. For example, Patent Document 1 discloses that a solder core ball coated with a ferromagnetic material such as Ni on the surface of a solder ball is dispersed on a substrate and then a magnet provided in a stage is moved. A solder ball placement device is described in which a solder core ball is transferred into an opening of a mask by the action of a magnetic force.
また、特許文献2には、CuボールのCuがはんだ中に拡散することを防止することを目的として、Cuボール表面にNiを被覆したCu核ボールが記載されている。特許文献3には、Cuとはんだとの反応を抑制することを目的として、コアボールとめっき層との間に、Ni、NiP合金、NiB合金、CoおよびPtの何れかの元素からなる反応抑制層を備えた金属ボールが記載されている。
ところで、近年では、電子部品の小型化に伴い高密度実装が実現されているが、高密度実装が進むにつれてソフトエラーという問題を引き起こすことになった。ソフトエラーは、半導体集積回路(以下、「IC」と称する。)のメモリセル中にα線が進入することにより記憶内容が書き換えられる可能性があるというものである。α線は、はんだ合金中のU、Th、Poなどの放射性元素がα崩壊することにより放射されると考えられている。そこで、近年では放射性元素の含有量を低減した低α線のはんだ材料の開発が行われている。 By the way, in recent years, high-density mounting has been realized along with downsizing of electronic components, but as high-density mounting has progressed, a problem of soft error has been caused. The soft error is that the stored content may be rewritten when α rays enter a memory cell of a semiconductor integrated circuit (hereinafter referred to as “IC”). It is considered that α rays are emitted by α decay of radioactive elements such as U, Th, and Po in the solder alloy. In recent years, therefore, development of low α-ray solder materials with reduced content of radioactive elements has been carried out.
α線量を低減させるためには、放射性同位体を含むU,Th,Pb,Biの含有量を低減させることが一般的である。例えば、関連文献として特許文献4が挙げられる。特許文献4には、α線量が低いSnインゴットの発明が開示されており、α線量を低減するため、単に電解精錬を行うのではなく、電解液に吸着剤を懸濁することによりPbやBiを吸着してα線量を低減することが記載されている。特許文献5には、α線量が低いAgおよびAg合金が記載されている。特許文献6には、α線量が低いCu及びCu合金が記載されている。 In order to reduce the α dose, it is common to reduce the content of U, Th, Pb and Bi containing radioactive isotopes. For example, Patent Document 4 is cited as a related document. Patent Document 4 discloses an invention of a Sn ingot with a low α dose, and in order to reduce the α dose, Pb and Bi are not suspended by simply suspending an adsorbent in the electrolytic solution instead of simply performing electrolytic refining. Is adsorbed to reduce the α dose. Patent Document 5 describes Ag and an Ag alloy having a low α dose. Patent Document 6 describes Cu and Cu alloys having a low α dose.
しかしながら、上記特許文献4〜6では、低α線量のCu核ボールを製造するために、高純度のCuを使用することでCu核ボールの低α線量を実現することができるが、その一方でCu核ボールの真球度が低くなってしまうという問題がある。また、実装時におけるCu核ボールの損傷等については何ら考慮されていない。 However, in Patent Documents 4 to 6, a low α dose of Cu core balls can be realized by using high purity Cu in order to produce a low α dose Cu core balls. There is a problem that the sphericity of the Cu core ball is lowered. Further, no consideration is given to damage to the Cu core ball during mounting.
また、上記特許文献1〜3では、はんだ核ボールやCu核ボールのα線量を低減するという課題は一切考慮されておらず、高密度実装においてソフトエラーの発生を抑制することができないという問題がある。 In Patent Documents 1 to 3, the problem of reducing the α dose of solder core balls and Cu core balls is not considered at all, and there is a problem that the occurrence of soft errors cannot be suppressed in high-density mounting. is there.
そこで、本発明は、上記課題を解決するために、Cu核ボールの電極上への実装時のボールの損傷等を防止しつつ、ソフトエラーの発生を抑制することが可能なCu核ボール、はんだ継手、フォームはんだ、およびはんだペーストを提供することを目的とする。 Therefore, in order to solve the above-described problems, the present invention provides a Cu core ball and solder capable of suppressing the occurrence of a soft error while preventing the ball from being damaged when mounted on the electrode of the Cu core ball. An object is to provide a joint, foam solder, and solder paste.
本発明者らは、まずCu核ボールに使用するCuボールについて選定を行った。その結果、CuボールにPbおよびBiの少なくとも一方が一定量含有されていなければ、Cuボールの真球度が低下し、Niめっき等を行っても、真球度が低い状態のままめっきされてしまうため、結局、得られるCu核ボールの真球度が低下することを知見した。 The inventors first selected a Cu ball to be used for the Cu core ball. As a result, if the Cu ball does not contain at least one of Pb and Bi in a certain amount, the sphericity of the Cu ball decreases, and even when Ni plating or the like is performed, the Cu ball is plated with a low sphericity. As a result, it has been found that the sphericity of the resulting Cu core ball is lowered.
次に、Cu核ボールを構成するNi,Co,Feを含有する金属層のα線量を低減させるため、めっき法を用いて金属層を形成する点に着目して鋭意検討を行った。その結果、本発明者らは、めっき液中のPb、Biや、これらの元素の崩壊により生成されるPoを低減するため、Cuボールやめっき液を流動させながらCuボールにめっき被膜を形成する際に、予想外にも、吸着剤を懸濁させなくてもこれらPb、Bi、Poの元素が塩を形成した。この結果、Ni等の金属層にこれらの元素が取り込まれず、α線量が低減する知見を得た。さらに、金属層を構成する金属として高純度のNi,Co,Feを用いると共に、イオン交換水等の不純物の少ない水を用いてめっき液を生成することにより、得られる金属層のα線量が低減する知見を得た。 Next, in order to reduce the α dose of the metal layer containing Ni, Co, and Fe constituting the Cu core ball, intensive studies were conducted focusing on the point of forming the metal layer using a plating method. As a result, in order to reduce Pb and Bi in the plating solution and Po generated by the decay of these elements, the present inventors form a plating film on the Cu ball while flowing the Cu ball or the plating solution. However, unexpectedly, these Pb, Bi and Po elements formed salts without suspending the adsorbent. As a result, it was found that these elements are not taken into the metal layer such as Ni and the α dose is reduced. In addition, high purity Ni, Co, and Fe are used as the metal constituting the metal layer, and the plating solution is generated using water with less impurities such as ion exchange water, thereby reducing the α dose of the resulting metal layer. I gained knowledge.
ここに、本発明は次の通りである。
(1)Cuボールと、
前記Cuボールの表面を被覆するNi、Co、Feから選択される1以上の元素からなる金属層と、を備え、
前記Cuボールは、純度が99.9%以上99.995%以下であり、Uの含有量が5ppb以下であり、Thの含有量が5ppb以下であり、PbおよびBiの少なくとも一方の含有量の合計量が1ppm以上であり、真球度が0.95以上であり、α線量が0.0200cph/cm2以下である
ことを特徴とするCu核ボール。Here, the present invention is as follows.
(1) Cu balls;
A metal layer composed of one or more elements selected from Ni, Co, and Fe covering the surface of the Cu ball,
The Cu ball has a purity of 99.9% or more and 99.995% or less, a U content of 5 ppb or less, a Th content of 5 ppb or less, and a content of at least one of Pb and Bi. A Cu core ball having a total amount of 1 ppm or more, a sphericity of 0.95 or more, and an α dose of 0.0200 cph / cm 2 or less.
(2)Cuボールと、
前記Cuボールの表面を被覆するNi、Co、Feから選択される1以上の元素からなる金属層と、を備え、
前記Cuボールは、純度が99.9%以上99.995%以下であり、PbおよびBiの少なくとも一方の含有量の合計量が1ppm以上であり、真球度が0.95以上であり、
前記金属層は、Uの含有量が5ppb以下であり、Thの含有量が5ppb以下であり、α線量が0.0200cph/cm2以下である
ことを特徴とするCu核ボール。(2) Cu balls;
A metal layer composed of one or more elements selected from Ni, Co, and Fe covering the surface of the Cu ball,
The Cu ball has a purity of 99.9% or more and 99.995% or less, a total amount of at least one of Pb and Bi is 1 ppm or more, and a sphericity is 0.95 or more,
The Cu core ball, wherein the metal layer has a U content of 5 ppb or less, a Th content of 5 ppb or less, and an α dose of 0.0200 cph / cm 2 or less.
(3)Cuボールと、
前記Cuボールの表面を被覆するNi、Co、Feから選択される1以上の元素からなる金属層と、
前記金属層の表面を被覆する、前記金属層に含有されていないNi、Co、Feから選択される1以上の元素からなる第2金属層と、備え、
前記Cuボールは、純度が99.9%以上99.995%以下であり、PbおよびBiの少なくとも一方の含有量の合計量が1ppm以上であり、真球度が0.95以上であり、
前記第2金属層は、Uの含有量が5ppb以下であり、Thの含有量が5ppb以下であり、α線量が0.0200cph/cm2以下である
ことを特徴とするCu核ボール。(3) Cu balls;
A metal layer composed of one or more elements selected from Ni, Co, and Fe covering the surface of the Cu ball;
A second metal layer comprising one or more elements selected from Ni, Co, and Fe that are not contained in the metal layer and covers the surface of the metal layer; and
The Cu ball has a purity of 99.9% or more and 99.995% or less, a total amount of at least one of Pb and Bi is 1 ppm or more, and a sphericity is 0.95 or more,
The Cu core ball, wherein the second metal layer has a U content of 5 ppb or less, a Th content of 5 ppb or less, and an α dose of 0.0200 cph / cm 2 or less.
(4)Cuボールと、
前記Cuボールの表面を被覆するNi、Co、Feから選択される1以上の元素からなる金属層と、
前記金属層の表面を被覆するはんだ層と、を備え、
前記Cuボールは、純度が99.9%以上99.995%以下であり、PbおよびBiの少なくとも一方の含有量の合計量が1ppm以上であり、真球度が0.95以上であり、
前記はんだ層は、Uの含有量が5ppb以下であり、Thの含有量が5ppb以下であり、α線量が0.0200cph/cm2以下である
ことを特徴とするCu核ボール。(4) Cu balls;
A metal layer composed of one or more elements selected from Ni, Co, and Fe covering the surface of the Cu ball;
A solder layer covering the surface of the metal layer,
The Cu ball has a purity of 99.9% or more and 99.995% or less, a total amount of at least one of Pb and Bi is 1 ppm or more, and a sphericity is 0.95 or more,
The Cu core ball, wherein the solder layer has a U content of 5 ppb or less, a Th content of 5 ppb or less, and an α dose of 0.0200 cph / cm 2 or less.
(5)Cuボールと、
前記Cuボールの表面を被覆するNi、Co、Feから選択される1以上の元素からなる金属層と、
前記金属層の表面を被覆する、前記金属層に含有されていないNi、Co、Feから選択される1以上の元素からなる第2金属層と、
前記第2金属層の表面を被覆するはんだ層と、備え、
前記Cuボールは、純度が99.9%以上99.995%以下であり、PbおよびBiの少なくとも一方の含有量の合計量が1ppm以上であり、真球度が0.95以上であり、
前記はんだ層は、Uの含有量が5ppb以下であり、Thの含有量が5ppb以下であり、α線量が0.0200cph/cm2以下である
ことを特徴とするCu核ボール。(5) Cu balls;
A metal layer composed of one or more elements selected from Ni, Co, and Fe covering the surface of the Cu ball;
A second metal layer comprising one or more elements selected from Ni, Co, and Fe that are not contained in the metal layer and covers the surface of the metal layer;
A solder layer covering the surface of the second metal layer,
The Cu ball has a purity of 99.9% or more and 99.995% or less, a total amount of at least one of Pb and Bi is 1 ppm or more, and a sphericity is 0.95 or more,
The Cu core ball, wherein the solder layer has a U content of 5 ppb or less, a Th content of 5 ppb or less, and an α dose of 0.0200 cph / cm 2 or less.
(6)α線量が0.0200cph/cm2以下である
ことを特徴とする上記(1)〜(5)に記載のCu核ボール。(6) The Cu core ball according to (1) to (5) above, wherein the α dose is 0.0200 cph / cm 2 or less.
(7)α線量が0.0010cph/cm2以下である
ことを特徴とする上記(1)〜(5)に記載のCu核ボール。(7) The Cu core ball according to any one of (1) to (5) above, wherein the α dose is 0.0010 cph / cm 2 or less.
(8)前記金属層、前記第2金属層、または前記はんだ層の表面を被覆するフラックス層をさらに備える
ことを特徴とする上記(1)〜(5)の何れか一項に記載のCu核ボール。(8) The Cu nucleus according to any one of (1) to (5), further including a flux layer that covers a surface of the metal layer, the second metal layer, or the solder layer. ball.
(9)上記(1)〜(8)のいずれか1つに記載のCu核ボールを用いたことを特徴とするはんだ継手。 (9) A solder joint using the Cu core ball described in any one of (1) to (8) above.
(10)上記(1)〜(8)のいずれか1つに記載のCu核ボールを用いたことを特徴とするフォームはんだ。 (10) A foam solder using the Cu core ball described in any one of (1) to (8) above.
(11)上記(1)〜(8)のいずれか1つに記載のCu核ボールを用いたことを特徴とするはんだペースト。 (11) A solder paste characterized by using the Cu core ball described in any one of (1) to (8) above.
本発明によれば、Cuボールのα線量を0.0200cph/cm2以下にするので、本発明のCu核ボールを用いてはんだ継手を形成する場合に、ソフトエラーの発生を抑制することができる。また、Cuボール表面をNi等の金属層により被覆するので、Cu核ボールに磁性を持たせることができる。これにより、Cu核ボールの電極上への実装時における損傷等を防止できると共にアライメント性を確保できる。According to the present invention, since the α dose of Cu balls is set to 0.0200 cph / cm 2 or less, the occurrence of soft errors can be suppressed when forming a solder joint using the Cu core balls of the present invention. . In addition, since the surface of the Cu ball is covered with a metal layer such as Ni, the Cu core ball can be made magnetic. Thereby, the damage etc. at the time of mounting on the electrode of Cu core ball can be prevented, and alignment nature can be secured.
本発明を以下により詳しく説明する。本明細書において、Cu核ボールの金属層の組成に関する単位(ppm、ppb、および%)は、特に指定しない限り金属層の質量に対する割合(質量ppm、質量ppb、および質量%)を表す。また、Cuボールの組成に関する単位(ppm、ppb、および%)は、特に指定しない限りCuボールの質量に対する割合(質量ppm、質量ppb、および質量%)を表す。 The invention is described in more detail below. In this specification, the unit (ppm, ppb, and%) related to the composition of the metal layer of the Cu core ball represents a ratio (mass ppm, mass ppb, and mass%) to the mass of the metal layer unless otherwise specified. Further, the units (ppm, ppb, and%) relating to the composition of the Cu balls represent ratios (mass ppm, mass ppb, and mass%) to the mass of the Cu balls unless otherwise specified.
図1は、本発明に係るCu核ボール11の構成の一例を示している。図1に示すように、本発明に係るCu核ボール11は、Cuボール1と、Cuボール1の表面を被覆するNi、Co、Feから選択される1以上の元素からなる金属層とを備えている。Cuボール1は、純度が99.9%以上99.995%以下であり、Uの含有量が5ppb以下であり、Thの含有量が5ppb以下であり、Pbおよび/またはBiの含有量の合計量が1ppm以上であり、真球度が0.95以上であり、α線量が0.0200cph/cm2以下である。本発明のCu核ボール11によれば、はんだ継手のα線量を低減することが可能となると共に、Cu核ボール11全体に磁性を持たせることができる。FIG. 1 shows an example of the configuration of a Cu core ball 11 according to the present invention. As shown in FIG. 1, a Cu core ball 11 according to the present invention includes a Cu ball 1 and a metal layer made of one or more elements selected from Ni, Co, and Fe covering the surface of the Cu ball 1. ing. The Cu ball 1 has a purity of 99.9% or more and 99.995% or less, a U content of 5 ppb or less, a Th content of 5 ppb or less, and a total content of Pb and / or Bi. The amount is 1 ppm or more, the sphericity is 0.95 or more, and the α dose is 0.0200 cph / cm 2 or less. According to the Cu core ball 11 of the present invention, the α dose of the solder joint can be reduced, and the entire Cu core ball 11 can be magnetized.
1.金属層
まず、本発明に係る金属層2について詳しく説明する。金属層2は、例えば、Niめっき層、Coめっき層、Feめっき層、またはNi,Co,Feの元素を2以上含むめっき層からなる。金属層2は、Cu核ボール11がはんだバンプに用いられる際にはんだ付けの温度で溶融せずに残り、はんだ継手の高さに寄与することから、真球度が高くて直径のバラツキが少なく、かつ、α線量が低くなるように構成される。1. Metal Layer First, the
・Cu核ボールのα線量:0.0200cph/cm2以下
本発明に係るCu核ボール11のα線量は0.0200cph/cm2以下である。これは、電子部品の高密度実装においてソフトエラーが問題にならない程度のα線量である。本発明に係るCu核ボール11のα線量は、Cu核ボール11を構成する金属層2のα線量が0.0200cph/cm2以下であることにより達成される。したがって、本発明に係るCu核ボール11は、このような金属層2で被覆されているために低いα線量を示す。α線量は、更なる高密度実装でのソフトエラーを抑制する観点から、好ましくは0.0020cph/cm2以下であり、より好ましくは0.0010cph/cm2以下である。金属層2のUおよびThの含有量は、Cuボール1のα線量を0.0200cph/cm2以下とするため、各々5ppb以下である。また、現在または将来の高密度実装でのソフトエラーを抑制する観点から、UおよびThの含有量は、好ましくは、各々2ppb以下である。-Α dose of Cu core ball: 0.0200 cph / cm 2 or less The α dose of Cu core ball 11 according to the present invention is 0.0200 cph / cm 2 or less. This is an α dose that does not cause a soft error in high-density mounting of electronic components. The α dose of the Cu core ball 11 according to the present invention is achieved when the α dose of the
・金属層の磁性機能
Cu核ボール11は、Cuボール1の表面を強磁性体からなる金属層2により被覆するので、ボール全体として磁性を有する。このように、Cu核ボール11に磁性を付与することで、以下のような効果を得ることができる。すなわち、振り込み方法によりCu核ボール11を電極上に実装する場合に、ステージ内に設けた磁石の磁力を利用することができ、基板に載置されたマスク上に散布されたCu核ボール11をマスクの開口部に的確に振り込むことができる。これにより、従来の振り込み手段のようにヘラや刷毛をCu核ボール11に直接的に接触させることがないので、振り込み手段によるCu核ボール11の損傷や変形、異物混入を防止することができる。また、磁石の作用によりCu核ボール11の位置を調整できるので、Cu核ボール11の電極上への実装時におけるアライメント性も確保できる。-Magnetic function of metal layer Since the Cu core ball 11 covers the surface of the Cu ball 1 with the
・金属層のバリア機能
リフロー時において、Cu核ボール11と電極間を接合するために使用するはんだ(ペースト)中にCuボール1のCuが拡散するすると、はんだ中および接続界面に硬くて脆いCu6Sn5、Cu3Snの金属間化合物が多量に形成され、衝撃を受けたときに亀裂が進展し、接続部を破壊してしまう。そのため、十分な接続強度を得るために、Cuボール1からはんだへのCuの拡散を抑制(バリア)することが必要である。本実施例では、バリア層として機能する金属層2をCuボール1の表面に形成するので、Cuボール1のCuがペーストのはんだ中に拡散することを抑制できる。-Barrier function of the metal layer When Cu of the Cu ball 1 diffuses into the solder (paste) used to join the Cu core ball 11 and the electrode during reflow, the hard and brittle Cu in the solder and the connection interface A large amount of an intermetallic compound of 6 Sn 5 and Cu 3 Sn is formed, and when subjected to an impact, cracks develop and break the connection. Therefore, in order to obtain sufficient connection strength, it is necessary to suppress (barrier) the diffusion of Cu from the Cu ball 1 to the solder. In this embodiment, since the
・金属層の組成および膜厚
金属層2の組成は、単一のNi、CoまたはFeにより金属層2を構成した場合、不可避不純物を除けば、Ni、Co、Feが100%である。また、金属層2に使用する金属は単一金属に限られず、Ni、CoまたはFeの中から2元素以上を組み合わせた合金を使用しても良い。さらに、金属層2で選択した元素以外のNi、Co、Feから構成される単体金属または合金からなる第2金属層を金属層2の表面に被覆してもよい。金属層2または第2金属層には、Ni、Co、Feが持つバリア機能や磁性機能に影響を及ぼさない程度の他の元素を所定量添加してもよい。添加する元素としては、例えば、Sn、Ag、Cu、In、Sb、Ge、P等が挙げられる。金属層2または第2金属層の膜厚Tは、例えば1μm〜20μmである。-Composition and film thickness of metal layer When the
2.Cuボール
次に、本発明を構成するCuボール1について詳しく説明する。Cuボール1は、Cu核ボール11がはんだバンプに用いられる際にはんだ付けの温度で溶融せずに残り、はんだ継手の高さに寄与することから、真球度が高くて直径のバラツキが少なく、かつ、α線量が低くなるように構成される。2. Cu Ball Next, the Cu ball 1 constituting the present invention will be described in detail. Since the Cu ball 1 remains unmelted at the soldering temperature when the Cu core ball 11 is used for a solder bump and contributes to the height of the solder joint, the sphericity is high and the variation in diameter is small And it is comprised so that alpha dose may become low.
・U:5ppb以下、Th:5ppb以下
UおよびThは放射性同位元素であり、ソフトエラーを抑制するにはこれらの含有量を抑える必要がある。UおよびThの含有量は、Cuボール1のα線量を0.0200cph/cm2以下とするため、各々5ppb以下にする必要がある。また、現在または将来の高密度実装でのソフトエラーを抑制する観点から、UおよびThの含有量は、好ましくは、各々2ppb以下である。U: 5 ppb or less, Th: 5 ppb or less U and Th are radioisotopes, and it is necessary to suppress their contents in order to suppress soft errors. The contents of U and Th must be 5 ppb or less in order to make the α dose of the Cu ball 1 0.0200 cph / cm 2 or less. Further, from the viewpoint of suppressing soft errors in current or future high-density mounting, the contents of U and Th are preferably 2 ppb or less, respectively.
・Cuボールの純度:99.9%以上99.995%以下
本発明を構成するCuボール1は純度が99.9%以上99.995%以下であることが好ましい。Cuボール1の純度がこの範囲であると、Cuボール1の真球度が高まるための十分な量の結晶核を溶融Cu中に確保することができる。真球度が高まる理由は以下のように詳述される。-Purity of Cu ball: 99.9% or more and 99.995% or less The Cu ball 1 constituting the present invention preferably has a purity of 99.9% or more and 99.995% or less. When the purity of the Cu ball 1 is within this range, a sufficient amount of crystal nuclei for increasing the sphericity of the Cu ball 1 can be secured in the molten Cu. The reason why the sphericity is increased will be described in detail as follows.
Cuボール1を製造する際、所定形状の小片に形成されたCu材は、加熱により溶融し、溶融Cuが表面張力によって球形となり、これが凝固してCuボール1となる。溶融Cuが液体状態から凝固する過程において、結晶粒が球形の溶融Cu中で成長する。この際、不純物元素が多いと、この不純物元素が結晶核となって結晶粒の成長が抑制される。したがって、球形の溶融Cuは、成長が抑制された微細結晶粒によって真球度が高いCuボール1となる。一方、不純物元素が少ないと、相対的に結晶核となるものが少なく、粒成長が抑制されずにある方向性をもって成長する。この結果、球形の溶融Cuは表面の一部分が突出して凝固してしまう。このようなCuボール1は真球度が低い。不純物元素としては、Sn、Sb、Bi、Zn、As、Ag、Cd、Ni、Pb、Au、P、S、U、Thなどが考えられる。 When the Cu ball 1 is manufactured, the Cu material formed into small pieces of a predetermined shape is melted by heating, and the molten Cu becomes spherical due to surface tension, which solidifies to become the Cu ball 1. In the process where the molten Cu solidifies from the liquid state, crystal grains grow in the spherical molten Cu. At this time, if there are many impurity elements, the impurity elements serve as crystal nuclei and growth of crystal grains is suppressed. Therefore, the spherical molten Cu becomes a Cu ball 1 having a high sphericity due to the fine crystal grains whose growth is suppressed. On the other hand, when there are few impurity elements, there are relatively few crystal nuclei, and the grains grow with a certain direction without being suppressed. As a result, a part of the surface of the spherical molten Cu protrudes and solidifies. Such a Cu ball 1 has a low sphericity. As the impurity element, Sn, Sb, Bi, Zn, As, Ag, Cd, Ni, Pb, Au, P, S, U, Th, and the like can be considered.
純度の下限値は特に限定されないが、α線量を抑制し、純度の低下によるCuボール1の電気伝導度や熱伝導率の劣化を抑制する観点から、好ましくは99.9%以上である。 The lower limit value of the purity is not particularly limited, but is preferably 99.9% or more from the viewpoint of suppressing the α dose and suppressing deterioration of the electrical conductivity and thermal conductivity of the Cu ball 1 due to the decrease in purity.
ここで、Niめっき層等の金属層2では純度が高い方がα線量を低減することができるのに対して、Cuボール1では純度を必要以上に高めなくてもα線量を低減することができる。Cuの方がSnより融点が高く、製造時の加熱温度はCuの方が高い。本発明では、Cuボール1を製造する際、後述のようにCu材に従来では行わない加熱処理を行うため、210Po、210Pb、210Biを代表とする放射性元素が揮発する。これらの放射性元素の中でも特に210Poは揮発し易い。Here, the higher the purity of the
・α線量:0.0200cph/cm2以下
本発明を構成するCuボール1のα線量は、好ましくは0.0200cph/cm2以下である。これは、電子部品の高密度実装においてソフトエラーが問題にならない程度のα線量である。本発明では、Cuボール1を製造するために通常行っている工程に加え再度加熱処理を施している。このため、Cuの原材料にわずかに残存する210Poが揮発し、Cuの原材料と比較してCuボール1の方がより一層低いα線量を示す。α線量は、更なる高密度実装でのソフトエラーを抑制する観点から、好ましくは0.0020cph/cm2以下であり、より好ましくは0.0010cph/cm2以下である。Α dose: 0.0200 cph / cm 2 or less The α dose of the Cu ball 1 constituting the present invention is preferably 0.0200 cph / cm 2 or less. This is an α dose that does not cause a soft error in high-density mounting of electronic components. In this invention, in addition to the process normally performed in order to manufacture Cu ball | bowl 1, it heat-processes again. For this reason, 210 Po slightly remaining in the Cu raw material volatilizes, and the Cu ball 1 exhibits a lower α dose than the Cu raw material. The α dose is preferably 0.0020 cph / cm 2 or less, more preferably 0.0010 cph / cm 2 or less, from the viewpoint of suppressing soft errors in further high-density mounting.
・PbおよびBiの少なくとも一方の含有量が合計で1ppm以上
本発明を構成するCuボール1は、不純物元素としてSn、Sb、Bi、Zn、As、Ag、Cd、Ni、Pb、Au、P、S、U、Thなどを含有するが、特にPbおよびBiの少なくとも一方の含有量が合計で1ppm以上含有することが好ましい。本発明では、はんだ継手の形成時にCuボール1が露出した場合であっても、α線量を低減する上でCuボール1のPbおよびBiの少なくとも一方の含有量を極限まで低減する必要がない。これは以下の理由による。The content of at least one of Pb and Bi is 1 ppm or more in total. The Cu ball 1 constituting the present invention has Sn, Sb, Bi, Zn, As, Ag, Cd, Ni, Pb, Au, P, as impurity elements. Although it contains S, U, Th, etc., it is particularly preferred that the content of at least one of Pb and Bi is 1 ppm or more in total. In the present invention, even when the Cu ball 1 is exposed at the time of forming the solder joint, it is not necessary to reduce the content of at least one of Pb and Bi of the Cu ball 1 to the limit in order to reduce the α dose. This is due to the following reason.
210Pbおよび210Biはβ崩壊により210Poに変化する。α線量を低減するためには、不純物元素であるPbおよびBiの含有量も極力低い方が好ましい。 210 Pb and 210 Bi change to 210 Po due to β decay. In order to reduce the α dose, it is preferable that the contents of impurity elements Pb and Bi are as low as possible.
しかし、PbおよびBiに含まれている210Pbや210Biの含有比は低い。PbやBiの含有量がある程度低減されれば、210Pbや210Biはほとんど除去されると考えられる。本発明に係るCuボール1は、Cuの溶解温度が従来よりもやや高めに設定されるか、Cu材および/または造球後のCuボール1に加熱処理が施されて製造される。この温度は、PbやBiの沸点より低い場合であっても気化は起こるため不純物元素量は低減する。また、Cuボール1の真球度を高めるためには不純物元素の含有量が高い方がよい。したがって、本発明のCuボール1は、PbおよびBiの少なくとも一方の含有量が合計で1ppm以上である。PbおよびBiのいずれも含まれる場合は、PbおよびBiの合計含有量が1ppm以上である。However, the content ratio of 210 Pb and 210 Bi contained in Pb and Bi is low. If the contents of Pb and Bi are reduced to some extent, it is considered that 210 Pb and 210 Bi are almost removed. The Cu ball 1 according to the present invention is manufactured by setting the Cu melting temperature to be slightly higher than the conventional temperature, or by subjecting the Cu material and / or the formed Cu ball 1 to heat treatment. Even if this temperature is lower than the boiling point of Pb or Bi, vaporization occurs and the amount of impurity elements is reduced. In order to increase the sphericity of the Cu ball 1, it is preferable that the content of the impurity element is high. Therefore, the Cu ball 1 of the present invention has a total content of at least one of Pb and Bi of 1 ppm or more. When both Pb and Bi are included, the total content of Pb and Bi is 1 ppm or more.
このように、PbおよびBiの少なくとも一方は、Cuボール1を製造した後でもある程度の量が残存するため含有量の測定誤差が少ない。さらに前述したようにBiおよびPbはCuボール1の製造工程における溶融時に結晶核となるため、Cu中にBiやPbが一定量含有されていれば真球度の高いCuボール1を製造することができる。したがって、PbやBiは、不純物元素の含有量を推定するために重要な元素である。このような観点からも、PbおよびBiの少なくとも一方の含有量は合計で1ppm以上であることが好ましい。PbおよびBiの少なくとも一方の含有量は、より好ましくは合計で10ppm以上である。上限値は特に限定されないが、Cuボール1の電気伝導度の劣化を抑制する観点から、より好ましくはPbおよびBiの少なくとも一方の含有量が合計で1000ppm未満であり、さらに好ましくは100ppm以下である。Pbの含有量は、より好ましくは10ppm〜50ppmであり、Biの含有量は、より好ましくは10ppm〜50ppmである。 Thus, since at least one of Pb and Bi remains after a certain amount of Cu ball 1 is manufactured, the measurement error of the content is small. Further, as described above, since Bi and Pb become crystal nuclei when melted in the manufacturing process of the Cu ball 1, if a certain amount of Bi or Pb is contained in Cu, the Cu ball 1 having high sphericity can be manufactured. Can do. Therefore, Pb and Bi are important elements for estimating the content of impurity elements. Also from such a viewpoint, the content of at least one of Pb and Bi is preferably 1 ppm or more in total. The content of at least one of Pb and Bi is more preferably 10 ppm or more in total. Although an upper limit is not specifically limited, From a viewpoint of suppressing deterioration of the electrical conductivity of the Cu ball 1, the content of at least one of Pb and Bi is more preferably less than 1000 ppm in total, and more preferably 100 ppm or less. . The content of Pb is more preferably 10 ppm to 50 ppm, and the content of Bi is more preferably 10 ppm to 50 ppm.
・Cuボールの真球度:0.95以上
本発明を構成するCuボール1は、基板間の適切な空間(スタンドオフ高さ)を制御する観点から真球度が0.95以上である。Cuボール1の真球度が0.95未満であると、Cuボール1が不定形状になるため、バンプ形成時に高さが不均一なバンプが形成され、接合不良が発生する可能性が高まる。さらに、Cu核ボール11を電極に搭載してリフローを行う際、Cu核ボール11が位置ずれを起こしてしまい、セルフアライメント性も悪化する。真球度は、より好ましくは0.990以上である。本発明において、真球度とは真球からのずれを表す。真球度は、例えば、最小二乗中心法(LSC法)、最小領域中心法(MZC法)、最大内接中心法(MIC法)、最小外接中心法(MCC法)など種々の方法で求められる。詳しくは、真球度とは、500個の各Cuボールの直径を長径で割った際に算出される算術平均値であり、値が上限である1.00に近いほど真球に近いことを表す。本発明での長径の長さ、および直径の長さとは、ミツトヨ社製のウルトラクイックビジョン、ULTRA QV350−PRO測定装置によって測定された長さをいう。Cu ball sphericity: 0.95 or more The Cu ball 1 constituting the present invention has a sphericity of 0.95 or more from the viewpoint of controlling an appropriate space (standoff height) between the substrates. If the sphericity of the Cu ball 1 is less than 0.95, the Cu ball 1 has an indeterminate shape, so that bumps with non-uniform height are formed during bump formation, and the possibility of poor bonding is increased. Further, when the Cu core ball 11 is mounted on the electrode and reflow is performed, the Cu core ball 11 is displaced, and the self-alignment property is also deteriorated. The sphericity is more preferably 0.990 or more. In the present invention, the sphericity represents a deviation from the sphere. The sphericity is obtained by various methods such as a least square center method (LSC method), a minimum region center method (MZC method), a maximum inscribed center method (MIC method), and a minimum circumscribed center method (MCC method). . Specifically, the sphericity is an arithmetic average value calculated when the diameter of each of the 500 Cu balls is divided by the major axis, and the closer the value is to the upper limit of 1.00, the closer to the true sphere. Represent. In the present invention, the length of the major axis and the length of the diameter refer to the length measured by an ultra quick vision, ULTRA QV350-PRO measuring device manufactured by Mitutoyo Corporation.
・Cuボールの直径:1〜1000μm
本発明を構成するCuボール1の直径は1〜1000μmであることが好ましい。この範囲にあると、球状のCuボール1を安定して製造でき、また、端子間が狭ピッチである場合の接続短絡を抑制することができる。・ Cu ball diameter: 1-1000 μm
It is preferable that the diameter of the Cu ball | bowl 1 which comprises this invention is 1-1000 micrometers. Within this range, the spherical Cu ball 1 can be produced stably, and connection short-circuiting when the terminals are at a narrow pitch can be suppressed.
ここで、例えば、本発明に係るCu核ボール11の直径が1〜300μm程度である場合、「Cu核ボール」の集合体は「Cu核パウダ」と称されてもよい。ここに、「Cu核パウダ」は、上述の特性を個々のCu核ボール11が備えた、多数のCu核ボール11の集合体である。例えば、はんだペースト中の粉末として配合されるなど、単一のCu核ボール11とは使用形態において区別される。同様に、はんだバンプの形成に用いられる場合にも、集合体として通常扱われるため、そのよう形態で使用される「Cu核パウダ」は単一のCu核ボール11とは区別される。 Here, for example, when the diameter of the Cu core ball 11 according to the present invention is about 1 to 300 μm, the aggregate of “Cu core balls” may be referred to as “Cu core powder”. Here, the “Cu core powder” is an aggregate of a large number of Cu core balls 11 in which the individual Cu core balls 11 have the above-described characteristics. For example, it is distinguished from the single Cu core ball 11 in the form of use, such as being blended as a powder in a solder paste. Similarly, when used for forming solder bumps, the “Cu core powder” used in such a form is distinguished from the single Cu core ball 11 because it is normally handled as an aggregate.
また本発明に係るCu核ボール11の真球度は0.95以上であることが好ましい。Cu核ボール11の真球度が低い場合、Cu核ボール11を電極に搭載してリフローを行う際、Cu核ボール11が位置ずれを起こしてしまい、セルフアライメント性も悪化する。真球度は、より好ましくは0.990以上である。 The sphericity of the Cu core ball 11 according to the present invention is preferably 0.95 or more. When the sphericity of the Cu core ball 11 is low, when the Cu core ball 11 is mounted on an electrode and reflowing is performed, the Cu core ball 11 is displaced and the self-alignment property is also deteriorated. The sphericity is more preferably 0.990 or more.
さらに、本発明に係るCu核ボール11を構成する金属層2の表面または第2金属層をフラックス層により被覆することもできる。また、Cu核ボール11を構成する金属層2または第2金属層の表面をはんだ層により被覆することもできる。このとき、はんだ層の表面をさらにフラックス層により被覆することもできる。
Furthermore, the surface of the
本発明では、Cuボール1自体を低いα線量とすることの他に、Cu核ボール11の構成において最外殻となる金属層2、第2金属層あるいははんだ層のα線量が0.0200cph/cm2以下であることにより本発明は達成される。したがって、本発明に係るCu核ボール11は、このような最外郭で被覆されているために低いα線量を示す。α線量は、更なる高密度実装でのソフトエラーを抑制する観点から、好ましくは0.0020cph/cm2以下であり、より好ましくは0.0010cph/cm2以下である。金属層2、第2金属層あるいははんだ層のUおよびThの含有量は、Cu核ボール11のα線量を0.0200cph/cm2以下とするため、各々5ppb以下である。また、現在または将来の高密度実装でのソフトエラーを抑制する観点から、UおよびThの含有量は、好ましくは、各々2ppb以下である。In the present invention, in addition to setting the Cu ball 1 itself to a low α dose, the α dose of the
また、本発明に係るCu核ボール11をはんだ中に分散させることで、フォームはんだとして使用することができる。また、本発明に係るCu核ボール11を含有させることで、はんだペーストとして使用することもできる。また、本発明に係るCu核ボール11は、電子部品の端子同士を接合するはんだ継手の形成に使用することもできる。 Moreover, it can be used as foam solder by dispersing the Cu core ball 11 according to the present invention in the solder. Moreover, it can also be used as a solder paste by containing Cu core ball 11 concerning the present invention. The Cu core ball 11 according to the present invention can also be used for forming a solder joint for joining terminals of an electronic component.
本発明に係るCu核ボール11の製造方法の一例を説明する。材料となるCu材はセラミックのような耐熱性の板(以下、「耐熱板」という。)に置かれ、耐熱板とともに炉中で加熱される。耐熱板には底部が半球状となった多数の円形の溝が設けられている。溝の直径や深さは、Cuボール1の粒径に応じて適宜設定されており、例えば、直径が0.8mmであり、深さが0.88mmである。また、Cu細線が切断されて得られたチップ形状のCu材(以下、「チップ材」という。)は、耐熱板の溝内に一個ずつ投入される。溝内にチップ材が投入された耐熱板は、アンモニア分解ガスが充填された炉内で1100〜1300℃に昇温され、30〜60分間加熱処理が行われる。このとき炉内温度がCuの融点以上になると、チップ材は溶融して球状となる。その後、炉内が冷却され、耐熱板の溝内でCuボール1が成形される。冷却後、成形されたCuボール1は、Cuの融点未満の温度である800〜1000℃で再度加熱処理が行われる。 An example of a method for manufacturing the Cu core ball 11 according to the present invention will be described. A Cu material as a material is placed on a heat-resistant plate such as ceramic (hereinafter referred to as “heat-resistant plate”), and is heated together with the heat-resistant plate in a furnace. The heat-resistant plate is provided with a number of circular grooves whose bottoms are hemispherical. The diameter and depth of the groove are appropriately set according to the particle diameter of the Cu ball 1, and for example, the diameter is 0.8 mm and the depth is 0.88 mm. In addition, chip-shaped Cu material (hereinafter referred to as “chip material”) obtained by cutting the Cu thin wire is put into the groove of the heat-resistant plate one by one. The heat-resistant plate in which the chip material is put in the groove is heated to 1100 to 1300 ° C. in a furnace filled with ammonia decomposition gas and subjected to heat treatment for 30 to 60 minutes. At this time, if the furnace temperature becomes equal to or higher than the melting point of Cu, the chip material melts and becomes spherical. Thereafter, the inside of the furnace is cooled, and the Cu ball 1 is formed in the groove of the heat-resistant plate. After cooling, the molded Cu ball 1 is subjected to heat treatment again at 800 to 1000 ° C., which is a temperature lower than the melting point of Cu.
また、別の方法としては、るつぼの底部に設けられたオリフィスから溶融Cuが滴下され、この液滴が冷却されてCuボール1が造球されるアトマイズ法や、熱プラズマがCuカットメタルを1000℃以上に加熱して造球する方法がある。このように造球されたCuボール1は、それぞれ800〜1000℃の温度で30〜60分間再加熱処理が施されても良い。 As another method, molten Cu is dropped from an orifice provided at the bottom of the crucible, and this droplet is cooled to form a Cu ball 1. There is a method of making a ball by heating to a temperature of ℃ or higher. The Cu balls 1 thus formed may be reheated at a temperature of 800 to 1000 ° C. for 30 to 60 minutes.
本発明のCu核ボール11の製造方法では、Cuボール1を造球する前にCuボール1の原料であるCu材を800〜1000℃で加熱処理してもよい。 In the method for manufacturing the Cu core ball 11 of the present invention, the Cu material that is the raw material of the Cu ball 1 may be heat-treated at 800 to 1000 ° C. before the Cu ball 1 is formed.
Cuボール1の原料であるCu材としては、例えばペレット、ワイヤー、ピラーなどを用いることができる。Cu材の純度は、Cuボール1の純度を下げすぎないようにする観点から99.9〜99.99%でよい。 As a Cu material that is a raw material of the Cu ball 1, for example, a pellet, a wire, a pillar, or the like can be used. The purity of the Cu material may be 99.9 to 99.99% from the viewpoint of preventing the purity of the Cu ball 1 from being lowered too much.
さらに高純度のCu材を用いる場合には、前述の加熱処理を行わず、溶融Cuの保持温度を従来と同様に1000℃程度に下げてもよい。このように、前述の加熱処理はCu材の純度やα線量に応じて適宜省略や変更されてもよい。また、α線量の高いCuボール1や異形のCuボール1が製造された場合には、これらのCuボール1が原料として再利用されることも可能であり、さらにα線量を低下させることができる。 Further, when a high-purity Cu material is used, the above-described heat treatment may not be performed, and the molten Cu holding temperature may be lowered to about 1000 ° C. as in the conventional case. Thus, the above-described heat treatment may be omitted or changed as appropriate according to the purity of the Cu material and the α dose. Further, when a Cu ball 1 having a high α dose or a deformed Cu ball 1 is manufactured, the Cu ball 1 can be reused as a raw material, and the α dose can be further reduced. .
作製されたCuボール1に金属層2を形成する方法としては、公知の電解めっき法等の方法を採用することができる。例えば、Niめっき層を形成する場合、Niめっきの浴種に対し、Ni地金を使用してNiめっき液を調整し、この調整したNiめっき液にCuボール1を浸漬させて電析することでCuボール1の表面にNiめっき層を形成する。また、Niめっき層等の金属層2を形成する他の方法として、公知の無電解めっき法等を採用することもできる。
As a method of forming the
また、本発明は、Cuを核としたカラム、ピラーやペレットの形態に応用されてもよい。 The present invention may also be applied to the form of columns, pillars, and pellets having Cu as a nucleus.
以下に本発明の実施例を説明するが、本発明はこれらに限定されるものではない。本実施例では真球度が高いCuボールを作製し、このCuボールの表面に金属層としてNiめっき層を形成してα線量を測定した。 Examples of the present invention will be described below, but the present invention is not limited thereto. In this example, a Cu ball having a high sphericity was produced, and a Ni plating layer was formed as a metal layer on the surface of the Cu ball, and the α dose was measured.
・Cuボールの作製
真球度が高いCuボールの作製条件を調査した。純度が99.9%のCuペレット、純度が99.995%以下のCuワイヤー、および純度が99.995%を超えるCu板を準備した。各々をるつぼの中に投入した後、るつぼの温度を1200℃に昇温させ、45分間加熱処理を行った。次に、るつぼ底部に設けたオリフィスから溶融Cuを滴下し、生成した液滴を冷却してCuボールを造球し、平均粒径が250μmのCuボールを作製した。元素分析は、UおよびThについては誘導結合プラズマ質量分析(ICP−MS分析)、その他の元素については誘導結合プラズマ発光分光分析(ICP−AES分析)により行われた。-Production of Cu ball The production conditions of a Cu ball having a high sphericity were investigated. A Cu pellet having a purity of 99.9%, a Cu wire having a purity of 99.995% or less, and a Cu plate having a purity exceeding 99.995% were prepared. After putting each in a crucible, the temperature of the crucible was raised to 1200 ° C. and heat treatment was performed for 45 minutes. Next, molten Cu was dropped from an orifice provided at the bottom of the crucible, and the generated droplet was cooled to form a Cu ball, thereby producing a Cu ball having an average particle diameter of 250 μm. Elemental analysis was performed by inductively coupled plasma mass spectrometry (ICP-MS analysis) for U and Th, and by inductively coupled plasma emission spectroscopy (ICP-AES analysis) for the other elements.
・真球度
真球度は、CNC画像測定システムにより測定した。装置は、ミツトヨ社製のウルトラクイックビジョン、ULTRA QV350−PROを用いた。-Sphericity The sphericity was measured by a CNC image measurement system. As the apparatus, Ultra Quick Vision, ULTRA QV350-PRO manufactured by Mitutoyo Corporation was used.
・α線量
α線量の測定方法は以下の通りである。α線量の測定にはガスフロー比例計数器のα線測定装置を用いた。測定サンプルは300mm×300mmの平面浅底容器にCuボールを敷き詰めたものである。この測定サンプルをα線測定装置内に入れ、PR−10ガスフローにて24時間放置した後、α線量を測定した。・ Α dose The measurement method of α dose is as follows. For measuring the α dose, an α ray measuring device of a gas flow proportional counter was used. The measurement sample is a 300 mm × 300 mm flat shallow container in which Cu balls are spread. This measurement sample was placed in an α-ray measuring apparatus and allowed to stand for 24 hours in a PR-10 gas flow, and then the α dose was measured.
なお、測定に使用したPR−10ガス(アルゴン90%−メタン10%)は、PR−10ガスをガスボンベに充填してから3週間以上経過したものである。3週間以上経過したボンベを使用したのは、ガスボンベに進入する大気中のラドンによりα線が発生しないように、JEDEC(Joint Electron Device Engineering Council)で定められたJEDEC STANDARD−Alpha Radiation Measurement in Electronic Materials JESD221に従ったためである。作製したCuボールの元素分析結果、α線量を表1に示す。 In addition, PR-10 gas (argon 90% -methane 10%) used for the measurement has passed three weeks or more after the gas cylinder was filled with PR-10 gas. The cylinder that was used for more than 3 weeks was used because the JEDEC STANDARD-Alpha Radiation Measurement Measurement was established by JEDEC (Joint Electron Engineering Engineering Coil) so that alpha rays would not be generated by radon in the atmosphere entering the gas cylinder. This is because JESD221 is followed. Table 1 shows the elemental analysis results and α dose of the produced Cu balls.
表1に示すように、純度が99.9%のCuペレットおよび純度が99.995%以下のCuワイヤーを用いたCuボールは、いずれも真球度が0.990以上を示した。一方、表1に示すように、純度が99.995%を超えるCu板を用いたCuボールは、真球度が0.95を下回った。 As shown in Table 1, the sphericity of each of the Cu balls using Cu pellets having a purity of 99.9% and Cu wires having a purity of 99.995% or less showed 0.990 or more. On the other hand, as shown in Table 1, the sphericity of Cu balls using a Cu plate with a purity exceeding 99.995% was less than 0.95.
次に、純度99.9%のCuペレットで製造したCuボール表面に純度99.99%以上のNi地金を用いてNiめっき層を形成してCu核ボールを作製した。本実施例では、ワット浴を用いてNiめっき層を電析するため、めっき液の調整を下記のように行った。まず、Ni地金を塩酸で溶かし、水分および余剰の塩酸ガスを蒸発させて塩化Niの結晶を作製した。また、Ni地金を硫酸で溶かし、水分および余剰の硫酸ガスを蒸発させて硫酸Niの結晶を作製した。建浴に使用するイオン交換水の1/3で塩化Niと硫酸Niを溶解させた。残りの2/3のイオン交換水を60℃まで加熱し、硼酸を溶解させた後、塩化Niと硫酸Niの混合溶液を加え、よく撹拌し、塩化Niと硫酸Niと硼酸を完全に溶解させることでNiめっき液の調整を終了した。 Next, a Ni plating layer was formed on the surface of a Cu ball made of 99.9% pure Cu pellets using a Ni metal having a purity of 99.99% or more to produce a Cu core ball. In this example, in order to electrodeposit a Ni plating layer using a watt bath, the plating solution was adjusted as follows. First, Ni ingot was dissolved with hydrochloric acid, and moisture and excess hydrochloric acid gas were evaporated to produce Ni chloride crystals. Also, Ni ingot was dissolved in sulfuric acid, and moisture and excess sulfuric acid gas were evaporated to produce Ni sulfate crystals. Ni chloride and Ni sulfate were dissolved in 1/3 of the ion-exchanged water used for the bath. The remaining 2/3 ion-exchanged water is heated to 60 ° C. to dissolve boric acid, and then a mixed solution of Ni chloride and Ni sulfate is added and stirred well to completely dissolve Ni chloride, Ni sulfate and boric acid. This completes the adjustment of the Ni plating solution.
次に、めっき装置のめっき槽に、上記の方法で建浴したNiめっき液を満たし、Cuボールを投入してNiめっき液にCuボールを浸漬させた。その後、電流を印加し電析させてCuボール表面にNiめっきを施した。本実施例では、Cuボールおよびめっき液を流動させながらめっきを行うが、流動させる方法については特に限定されない。例えば、バレル電解めっき法の場合には、バレルを特定の回転数にて回転させることでCuボールおよびめっき液を流動させることができる。このとき、Niめっき液の液温を40〜60℃で維持する。また、電気量を0.0019クーロンに設定し、例えば、直径100μmのCuボール1個に片側2μm(図1のT参照)のNiめっき層を形成した。狙いの球径までNiの膜厚が成長したら、めっき装置を停止させて、Cuボール表面にNiめっき層が形成されたCu核ボールを回収した。 Next, the plating bath of the plating apparatus was filled with the Ni plating solution bathed by the above method, and Cu balls were introduced to immerse the Cu balls in the Ni plating solution. Thereafter, Ni was plated on the surface of the Cu ball by applying an electric current to cause electrodeposition. In this embodiment, the plating is performed while flowing the Cu ball and the plating solution, but the method of flowing is not particularly limited. For example, in the case of the barrel electrolytic plating method, the Cu ball and the plating solution can be made to flow by rotating the barrel at a specific rotational speed. At this time, the temperature of the Ni plating solution is maintained at 40 to 60 ° C. Further, the amount of electricity was set to 0.0019 coulomb, and for example, a Ni plating layer of 2 μm on one side (see T in FIG. 1) was formed on one Cu ball having a diameter of 100 μm. When the Ni film thickness grew to the target sphere diameter, the plating apparatus was stopped, and the Cu core balls having the Ni plating layer formed on the Cu ball surface were collected.
Cu核ボールのα線量は、前述のCuボールと同様の装置を用いて同様の方法により測定した。また、Cu核ボールの真球度についてもCuボールと同じ条件で測定を行った。これらの測定結果を表2に示す。 The α dose of the Cu core ball was measured by the same method using the same apparatus as the above-mentioned Cu ball. The sphericity of the Cu core ball was also measured under the same conditions as the Cu ball. These measurement results are shown in Table 2.
実施例2では、表1に示した純度が99.995%以下のCuワイヤーを用いたCuボールを用いて、実施例1と同様の方法によりNiめっき処理を行い、Cuボール表面にNiめっき層が形成されたCu核ボールを作製し、実施例1と同様の評価を行った。作製したCu核ボールについて、実施例1と同様に、α線量、真球度を測定した。測定結果を表2に示す。 In Example 2, Ni plating treatment was performed by the same method as in Example 1 using Cu balls using Cu wires having a purity of 99.995% or less shown in Table 1, and a Ni plating layer was formed on the surface of the Cu balls. A Cu core ball formed with was prepared and evaluated in the same manner as in Example 1. The α dose and sphericity of the produced Cu core ball were measured in the same manner as in Example 1. The measurement results are shown in Table 2.
実施例3では、表1に示した純度が99.995%を超えるCu板を用いたCuボールを用いて、実施例1と同様の方法によりNiめっき処理を行い、Cuボール表面にNiめっき層が形成されたCu核ボールを作製し、実施例1と同様の評価を行った。作製したCu核ボールについて、実施例1と同様に、α線量、真球度を測定した。測定結果を表2に示す。 In Example 3, Ni plating treatment was performed by the same method as in Example 1 using Cu balls using a Cu plate having a purity exceeding 99.995% shown in Table 1, and a Ni plating layer was formed on the surface of the Cu balls. A Cu core ball formed with was prepared and evaluated in the same manner as in Example 1. The α dose and sphericity of the produced Cu core ball were measured in the same manner as in Example 1. The measurement results are shown in Table 2.
表2によれば、実施例1では、Cu核ボールのα線量は0.0010cph/cm2未満を示した。実施例1のCu核ボールによれば、Niめっき層をCuボール表面に形成した場合でもα線量が低減することが立証された。また、実施例1で作成したCu核ボールのα線量は、表1には示していないが、作成後1年を経過してもα線の上昇は見られなかった。According to Table 2, in Example 1, the α dose of the Cu core ball was less than 0.0010 cph / cm 2 . According to the Cu core ball of Example 1, it was proved that the α dose was reduced even when the Ni plating layer was formed on the Cu ball surface. Further, the α dose of the Cu core ball prepared in Example 1 is not shown in Table 1, but no increase in α-ray was observed even after one year from the preparation.
同様に、実施例2および実施例3でも、Cu核ボールのα線量は0.0010cph/cm2未満を示した。実施例2、3のCu核ボールによれば、Niめっき層をCuボール表面に形成した場合でもα線量が低減することが立証された。また、実施例2および実施例3で作成したCu核ボールのα線量は、表1には示していないが、作成後1年を経過してもα線の上昇は見られなかった。Similarly, in Example 2 and Example 3, the α dose of the Cu core ball was less than 0.0010 cph / cm 2 . According to the Cu core balls of Examples 2 and 3, it was proved that the α dose was reduced even when the Ni plating layer was formed on the Cu ball surface. Moreover, although the alpha dose of Cu core ball produced in Example 2 and Example 3 is not shown in Table 1, even if it passed 1 year after production, the raise of alpha rays was not seen.
なお、本発明の技術範囲は、上述した実施形態に限定されるものではなく、本発明の趣旨を逸脱しない範囲において、上述した実施形態に種々の変更を加えたものを含む。例えば、上述した実施例では、金属層としてNiめっき層を採用した例について説明したが、金属層としてCoめっき層やFeめっき層を採用した場合でも、Niめっき層と同様に、低α線量で、かつ、真球度の高いCu核ボールを得ることができる。 It should be noted that the technical scope of the present invention is not limited to the above-described embodiments, and includes those in which various modifications are made to the above-described embodiments without departing from the spirit of the present invention. For example, in the above-described embodiments, the example in which the Ni plating layer is employed as the metal layer has been described. And Cu core ball with high sphericity can be obtained.
1 Cuボール
2 金属層
11 Cu核ボール1
Claims (11)
前記Cuボールの表面を被覆するNi、Co、Feから選択される1以上の元素からなる金属層と、を備え、
前記Cuボールは、純度が99.9%以上99.995%以下であり、Uの含有量が5ppb以下であり、Thの含有量が5ppb以下であり、PbおよびBiの少なくとも一方の含有量の合計量が1ppm以上であり、真球度が0.95以上であり、α線量が0.0200cph/cm2以下である
ことを特徴とするCu核ボール。Cu balls,
A metal layer composed of one or more elements selected from Ni, Co, and Fe covering the surface of the Cu ball,
The Cu ball has a purity of 99.9% or more and 99.995% or less, a U content of 5 ppb or less, a Th content of 5 ppb or less, and a content of at least one of Pb and Bi. A Cu core ball having a total amount of 1 ppm or more, a sphericity of 0.95 or more, and an α dose of 0.0200 cph / cm 2 or less.
前記Cuボールの表面を被覆するNi、Co、Feから選択される1以上の元素からなる金属層と、を備え、
前記Cuボールは、純度が99.9%以上99.995%以下であり、PbおよびBiの少なくとも一方の含有量の合計量が1ppm以上であり、真球度が0.95以上であり、
前記金属層は、Uの含有量が5ppb以下であり、Thの含有量が5ppb以下であり、α線量が0.0200cph/cm2以下である
ことを特徴とするCu核ボール。Cu balls,
A metal layer composed of one or more elements selected from Ni, Co, and Fe covering the surface of the Cu ball,
The Cu ball has a purity of 99.9% or more and 99.995% or less, a total amount of at least one of Pb and Bi is 1 ppm or more, and a sphericity is 0.95 or more,
The Cu core ball, wherein the metal layer has a U content of 5 ppb or less, a Th content of 5 ppb or less, and an α dose of 0.0200 cph / cm 2 or less.
前記Cuボールの表面を被覆するNi、Co、Feから選択される1以上の元素からなる金属層と、
前記金属層の表面を被覆する、前記金属層に含有されていないNi、Co、Feから選択される1以上の元素からなる第2金属層と、備え、
前記Cuボールは、純度が99.9%以上99.995%以下であり、PbおよびBiの少なくとも一方の含有量の合計量が1ppm以上であり、真球度が0.95以上であり、
前記第2金属層は、Uの含有量が5ppb以下であり、Thの含有量が5ppb以下であり、α線量が0.0200cph/cm2以下である
ことを特徴とするCu核ボール。Cu balls,
A metal layer composed of one or more elements selected from Ni, Co, and Fe covering the surface of the Cu ball;
A second metal layer comprising one or more elements selected from Ni, Co, and Fe that are not contained in the metal layer and covers the surface of the metal layer; and
The Cu ball has a purity of 99.9% or more and 99.995% or less, a total amount of at least one of Pb and Bi is 1 ppm or more, and a sphericity is 0.95 or more,
The Cu core ball, wherein the second metal layer has a U content of 5 ppb or less, a Th content of 5 ppb or less, and an α dose of 0.0200 cph / cm 2 or less.
前記Cuボールの表面を被覆するNi、Co、Feから選択される1以上の元素からなる金属層と、
前記金属層の表面を被覆するはんだ層と、を備え、
前記Cuボールは、純度が99.9%以上99.995%以下であり、PbおよびBiの少なくとも一方の含有量の合計量が1ppm以上であり、真球度が0.95以上であり、
前記はんだ層は、Uの含有量が5ppb以下であり、Thの含有量が5ppb以下であり、α線量が0.0200cph/cm2以下である
ことを特徴とするCu核ボール。Cu balls,
A metal layer composed of one or more elements selected from Ni, Co, and Fe covering the surface of the Cu ball;
A solder layer covering the surface of the metal layer,
The Cu ball has a purity of 99.9% or more and 99.995% or less, a total amount of at least one of Pb and Bi is 1 ppm or more, and a sphericity is 0.95 or more,
The Cu core ball, wherein the solder layer has a U content of 5 ppb or less, a Th content of 5 ppb or less, and an α dose of 0.0200 cph / cm 2 or less.
前記Cuボールの表面を被覆するNi、Co、Feから選択される1以上の元素からなる金属層と、
前記金属層の表面を被覆する、前記金属層に含有されていないNi、Co、Feから選択される1以上の元素からなる第2金属層と、
前記第2金属層の表面を被覆するはんだ層と、備え、
前記Cuボールは、純度が99.9%以上99.995%以下であり、PbおよびBiの少なくとも一方の含有量の合計量が1ppm以上であり、真球度が0.95以上であり、
前記はんだ層は、Uの含有量が5ppb以下であり、Thの含有量が5ppb以下であり、α線量が0.0200cph/cm2以下である
ことを特徴とするCu核ボール。Cu balls,
A metal layer composed of one or more elements selected from Ni, Co, and Fe covering the surface of the Cu ball;
A second metal layer comprising one or more elements selected from Ni, Co, and Fe that are not contained in the metal layer and covers the surface of the metal layer;
A solder layer covering the surface of the second metal layer,
The Cu ball has a purity of 99.9% or more and 99.995% or less, a total amount of at least one of Pb and Bi is 1 ppm or more, and a sphericity is 0.95 or more,
The Cu core ball, wherein the solder layer has a U content of 5 ppb or less, a Th content of 5 ppb or less, and an α dose of 0.0200 cph / cm 2 or less.
ことを特徴とする請求項1〜5のいずれか一項に記載のCu核ボール。The α core dose is 0.0200 cph / cm 2 or less. The Cu core ball according to any one of claims 1 to 5, wherein
ことを特徴とする請求項1〜5のいずれか一項に記載のCu核ボール。The α core dose is 0.0010 cph / cm 2 or less. The Cu core ball according to any one of claims 1 to 5, wherein
ことを特徴とする請求項1〜5の何れか一項に記載のCu核ボール。The Cu core ball according to any one of claims 1 to 5, further comprising a flux layer covering a surface of the metal layer, the second metal layer, or the solder layer.
ことを特徴とするはんだ継手。A solder joint using the Cu core ball according to any one of claims 1 to 8.
ことを特徴とするフォームはんだ。A foam solder using the Cu core ball according to any one of claims 1 to 8.
ことを特徴とするはんだペースト。A solder paste using the Cu core ball according to any one of claims 1 to 8.
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JPWO2015114771A1 (en) | 2017-03-23 |
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