JP5579783B2 - 集積型ガスパネル装置 - Google Patents
集積型ガスパネル装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 11
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K27/00—Construction of housing; Use of materials therefor
- F16K27/003—Housing formed from a plurality of the same valve elements
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F15—FLUID-PRESSURE ACTUATORS; HYDRAULICS OR PNEUMATICS IN GENERAL
- F15B—SYSTEMS ACTING BY MEANS OF FLUIDS IN GENERAL; FLUID-PRESSURE ACTUATORS, e.g. SERVOMOTORS; DETAILS OF FLUID-PRESSURE SYSTEMS, NOT OTHERWISE PROVIDED FOR
- F15B13/00—Details of servomotor systems ; Valves for servomotor systems
- F15B13/02—Fluid distribution or supply devices characterised by their adaptation to the control of servomotors
- F15B13/06—Fluid distribution or supply devices characterised by their adaptation to the control of servomotors for use with two or more servomotors
- F15B13/08—Assemblies of units, each for the control of a single servomotor only
- F15B13/0803—Modular units
- F15B13/0821—Attachment or sealing of modular units to each other
- F15B13/0825—Attachment or sealing of modular units to each other the modular elements being mounted on a common member, e.g. on a rail
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17D—PIPE-LINE SYSTEMS; PIPE-LINES
- F17D1/00—Pipe-line systems
- F17D1/02—Pipe-line systems for gases or vapours
- F17D1/04—Pipe-line systems for gases or vapours for distribution of gas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/5109—Convertible
- Y10T137/5283—Units interchangeable between alternate locations
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
- Y10T137/877—With flow control means for branched passages
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
- Y10T137/877—With flow control means for branched passages
- Y10T137/87885—Sectional block structure
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- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Fluid Mechanics (AREA)
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- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Valve Housings (AREA)
- Pipeline Systems (AREA)
- Flow Control (AREA)
- Branch Pipes, Bends, And The Like (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
Description
特許文献1:特開平10−169881
また、枝流路が多数になると、その分だけ主流路長が長くなって、このことも流体回路系の応答性に悪影響を与える。
前記中心ブロック体の軸線方向一端面に、外部配管が接続される出口ポートが設けられており、
前記各枝流路において最も中間流路側のガス制御機器が、前記中心ブロック体の軸線方向一端部に設けられおり、
前記各枝流路に設けられる複数のガス制御機器において、前記最も中間側のガス制御機器を除くその他のガス制御機器が、前記最も中間流路側のガス制御機器よりも前記出口ポートとは反対側にのみ設けられていることを特徴とする。
第1実施形態では、図1から図5を参照する。
この実施形態に係る集積型ガスパネル装置1は、半導体製造システムの一部を構成するものであり、その概要を図1に示すように、成膜用の各種ガスを図示しないガス供給源からそれぞれ導入し、それらを混合して半導体の成膜チャンバ(図示しない)に供給するために用いられる。
この集積型ガスパネル装置1には、回路的にみて並列させた複数の枝流路R1と、それら各枝流路R1の出口が接続された1本の主流路R2とが設けられている。
しかも、ブロック体を平面的に配置して従来と同様のパネル体2を構成し、平面的な形状を維持しているので、例えば既存装置と置き換えることも無理なくできる。
この例では、図5に示すように、前記主流路用ブロック体32の表面に挿入孔321を開口させ、その挿入孔321を内部の主流路R2に連通させておく一方、枝流路用ブロック体31の最下流のもの、すなわち枝流路R1の出口部分を有する枝流路用ブロック体31(1)に、表面から当該枝流路R1を突出させた円筒状の出口配管(以下、突出配管ともいう)311を一体に(別体でも構わない)設けるようにしている。
以下に本発明の第2実施形態について図6〜図10を参照して説明する。
この実施形態に係る集積型ガスパネル装置1は、半導体製造システムの一部を構成するものであり、その概要を図6に示すように、成膜用の各種ガスを図示しないガス供給源からそれぞれ導入し、それらを混合して半導体の成膜チャンバ(図示しない)に供給するために用いられる。
加えて、突出配管は、枝流路用ブロック体に一体的に設けるだけでなく、枝流路用ブロック体とは別々に設けておいて、組み立てるようにしても構わない。
以下に本発明の第3実施形態について図11〜図14を参照して説明する。
Claims (6)
- バルブやマスフローコントローラ等の複数のガス制御機器が途上に設けられて内部を流れるガスを制御できるように構成された複数の枝流路と、
それら枝流路からのガスが流れ込んで合流する1本の主流路と、
一の枝流路が内部に形成された、底面を取付面とする長尺パネル状をなす枝流路用ブロック体と、
側周面に形成した保持面で複数の枝流路用ブロック体をそれらの長手方向が互いに平行となるように保持する中心ブロック体と、を備え、
前記中心ブロック体に前記主流路を形成するとともに、その主流路に設定した合流部位から、当該中心ブロック体の側周面に取り付けた枝流路用ブロック体の枝流路に向かってそれぞれ延びる複数の中間流路を形成し、
前記複数の中間流路からのガスのみが前記主流路の前記合流部位に流れ込むようにしており、
前記中心ブロック体の軸線方向一端面に、外部配管が接続される出口ポートが設けられており、
前記各枝流路において最も中間流路側のガス制御機器が、前記中心ブロック体の軸線方向一端部に設けられおり、
前記各枝流路に設けられる複数のガス制御機器において、前記最も中間側のガス制御機器を除くその他のガス制御機器が、前記最も中間流路側のガス制御機器よりも前記出口ポートとは反対側にのみ設けられている立体集積型ガスパネル装置。 - 前記合流部位が主流路の一箇所に設定されている請求項1記載の立体集積型ガスパネル装置。
- 前記各保持面によって中央ブロック体の軸線を中心とした回転対称形が構成されるとともに、前記合流部位が前記軸線上に設けられて各中間流路が互いに等しい長さに設定されている請求項2記載の立体集積型ガスパネル装置。
- 前記主流路が、前記軸線上に沿って設けられている請求項1記載の立体集積型ガスパネル装置。
- 前記中心ブロック体が正多角柱状をなすものである請求項1記載の立体集積型ガスパネル装置。
- 前記ガスが半導体製造プロセスに用いられるものである請求項1記載の立体集積型ガスパネル装置。
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JP2006226874 | 2006-08-23 | ||
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JP (2) | JP5037510B2 (ja) |
KR (1) | KR101466998B1 (ja) |
CN (1) | CN101506561B (ja) |
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JPWO2008023711A1 (ja) | 2010-01-14 |
US20090320754A1 (en) | 2009-12-31 |
JP5037510B2 (ja) | 2012-09-26 |
US8820360B2 (en) | 2014-09-02 |
CN101506561B (zh) | 2012-04-18 |
CN101506561A (zh) | 2009-08-12 |
TWI435991B (zh) | 2014-05-01 |
US20120227848A1 (en) | 2012-09-13 |
TW200825315A (en) | 2008-06-16 |
US8196609B2 (en) | 2012-06-12 |
JP2012229807A (ja) | 2012-11-22 |
WO2008023711A1 (fr) | 2008-02-28 |
KR20090053822A (ko) | 2009-05-27 |
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