JP5569126B2 - Adhesive composition, adhesive sheet, and method for manufacturing semiconductor device - Google Patents

Adhesive composition, adhesive sheet, and method for manufacturing semiconductor device Download PDF

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Publication number
JP5569126B2
JP5569126B2 JP2010102493A JP2010102493A JP5569126B2 JP 5569126 B2 JP5569126 B2 JP 5569126B2 JP 2010102493 A JP2010102493 A JP 2010102493A JP 2010102493 A JP2010102493 A JP 2010102493A JP 5569126 B2 JP5569126 B2 JP 5569126B2
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Prior art keywords
adhesive
mass
parts
adhesive layer
adhesive composition
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JP2010102493A
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Japanese (ja)
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JP2011080033A (en
Inventor
朗 永井
恵介 大久保
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Showa Denko Materials Co Ltd
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Hitachi Chemical Co Ltd
Showa Denko Materials Co Ltd
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Priority to JP2010102493A priority Critical patent/JP5569126B2/en
Publication of JP2011080033A publication Critical patent/JP2011080033A/en
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Publication of JP5569126B2 publication Critical patent/JP5569126B2/en
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35—Heat-activated
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
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    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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Description

本発明は、接着剤組成物、接着剤シート及び半導体装置の製造方法に関する。   The present invention relates to an adhesive composition, an adhesive sheet, and a method for manufacturing a semiconductor device.

近年、電子機器の小型化、薄型化に伴い、回路部材に形成された回路の高密度化が進展し、隣接する電極との間隔や電極の幅が非常に狭くなる傾向がある。これに伴い、半導体パッケージの薄型化や小型化に対する要求も高まっている。そのため、半導体チップ実装方式として、金属ワイヤを用いて接続する従来のワイヤーボンディング方式に代えて、チップ電極上にバンプと呼ばれる突起電極を形成し、基板電極とチップ電極とをバンプを介して直接接続するフリップチップ接続方式が注目されている。   In recent years, with the miniaturization and thinning of electronic devices, the density of circuits formed on circuit members has increased, and the distance between adjacent electrodes and the width of electrodes tend to be very narrow. Along with this, there is an increasing demand for thinner and smaller semiconductor packages. Therefore, as a semiconductor chip mounting method, instead of the conventional wire bonding method that uses metal wires to connect, protruding electrodes called bumps are formed on the chip electrodes, and the substrate electrodes and chip electrodes are directly connected via the bumps. The flip chip connection method is attracting attention.

フリップチップ接続方式としては、ハンダバンプを用いる方式、金バンプと導電性接着剤を用いる方式、熱圧着方式、超音波方式などが知られている。これらの方式では、チップと基板との熱膨張係数差に由来する熱ストレスが接続部分に集中して接続信頼性が低下するという問題がある。このような接続信頼性の低下を防止するために、一般に、チップと基板の間隙を充填するアンダーフィルが樹脂により形成される。アンダーフィルへの分散により熱ストレスが緩和されるため、接続信頼性を向上させることが可能である。   Known flip-chip connection methods include a method using solder bumps, a method using gold bumps and a conductive adhesive, a thermocompression bonding method, and an ultrasonic method. In these systems, there is a problem that the connection reliability is lowered because thermal stress derived from the difference in thermal expansion coefficient between the chip and the substrate is concentrated on the connection portion. In order to prevent such a decrease in connection reliability, an underfill that fills the gap between the chip and the substrate is generally formed of a resin. Since thermal stress is alleviated by dispersion in the underfill, connection reliability can be improved.

アンダーフィルを形成する方法としては、一般に、チップと基板とを接続した後に液状樹脂をチップと基板との間隙に注入する方法が知られている（特許文献１参照）。また、異方導電性接着フィルム（以下ＡＣＦと称する）や、非導電性接着フィルム（以下ＮＣＦと称する）等のフィルム状樹脂を用いてチップと基板とを接続する工程において、アンダーフィル形成も完了させる方法も知られている（特許文献２参照）。   As a method for forming an underfill, a method is generally known in which a liquid resin is injected into a gap between a chip and a substrate after the chip and the substrate are connected (see Patent Document 1). In addition, underfill formation is completed in the process of connecting the chip and the substrate using a film-like resin such as an anisotropic conductive adhesive film (hereinafter referred to as ACF) or a non-conductive adhesive film (hereinafter referred to as NCF). The method of making it known is also known (refer patent document 2).

一方、近年ではさらなる高機能化、高速動作を可能とするものとしてチップ間を最短距離で接続する３次元実装技術であるシリコン貫通電極（ＴＳＶ：Ｔｈｒｏｕｇｈ Ｓｉｌｉｃｏｎ Ｖｉａ）が注目されている（非特許文献１参照）。この結果、半導体ウエハの厚さはできるだけ薄く、かつ機械的強度が低下しないことが要求されてきている。   On the other hand, through silicon vias (TSV: Through Silicon Via), which is a three-dimensional mounting technology for connecting chips at the shortest distance, has recently attracted attention as enabling higher functionality and higher speed operation (non-patent literature). 1). As a result, it has been demanded that the thickness of the semiconductor wafer be as thin as possible and the mechanical strength not be lowered.

そして、半導体装置の更なる薄型化の要求に伴い、半導体ウエハをより薄くするために、ウエハの裏面を研削する、いわゆるバックグラインドが行われており、半導体装置の製造工程は煩雑になっている。そこで、工程の簡略化に適した方法としてバックグラインド時に半導体ウエハを保持する機能とアンダーフィル機能を兼ね備える樹脂の提案がなされてきている（特許文献３、４参照）。   In accordance with the demand for further thinning of the semiconductor device, so-called back grinding is performed to grind the back surface of the wafer in order to make the semiconductor wafer thinner, and the manufacturing process of the semiconductor device is complicated. . Therefore, as a method suitable for simplifying the process, a resin having a function of holding a semiconductor wafer during back grinding and an underfill function has been proposed (see Patent Documents 3 and 4).

特開２０００−１００８６２号公報Japanese Patent Laid-Open No. 2000-10082 特開２００３−１４２５２９号公報JP 2003-142529 A 特開２００１−３３２５２０号公報JP 2001-332520 A 特開２００５−０２８７３４号公報JP 2005-028734 A

ＯＫＩテクニカルレビュー２００７年１０月／第２１１号ＶＯL．７４ Ｎｏ．３OKI Technical Review October 2007 / No. 211 VOL. 74 No. 3

しかしながら、半導体装置の薄膜化に伴って、接続部の空隙や端子間のピッチがより一層狭くなってきており、接続時のフィルム状樹脂の流動不足による界面への濡れ不足やフィルム状樹脂の発泡によるボイドの発生等により、フィルム状樹脂のピッチ間への充填が不十分となり、接続信頼性を低下させることがある。そこで、回路部材の接続に用いられるフィルム状接着剤には、接続信頼性を確保する点から、圧着時にボイドが発生し難く優れた埋込性を有していることや、硬化後の接着力が十分に高いことが必要とされている。   However, with the thinning of the semiconductor device, the gaps between the connection portions and the pitch between the terminals are becoming even narrower, resulting in insufficient wetting at the interface due to insufficient flow of the film-like resin at the time of connection and foaming of the film-like resin. Due to the generation of voids, etc., the filling of the film-like resin between the pitches becomes insufficient, and the connection reliability may be lowered. Therefore, the film-like adhesive used for connecting circuit members has excellent embedding properties, in which voids are unlikely to occur during crimping, and adhesive strength after curing, in order to ensure connection reliability. Is required to be high enough.

本発明は、上記事情に鑑みてなされたものであり、フィルム状にしたときの埋込性に十分に優れるとともに、接続信頼性に優れる半導体装置の作製を可能とする接着剤組成物、それを用いた接着剤シート、及び半導体装置の製造方法を提供することを目的とする。   The present invention has been made in view of the above circumstances, and is sufficiently excellent in embedding property when formed into a film, and an adhesive composition that enables production of a semiconductor device excellent in connection reliability, It is an object of the present invention to provide a used adhesive sheet and a method for manufacturing a semiconductor device.

上記課題を解決するため、本発明は、（Ａ）熱可塑性樹脂と、（Ｂ）熱硬化性樹脂と、（Ｃ）潜在性硬化剤と、（Ｄ）無機フィラーと、（Ｅ）有機微粒子と、を含む、接着剤組成物を提供する。   In order to solve the above problems, the present invention provides (A) a thermoplastic resin, (B) a thermosetting resin, (C) a latent curing agent, (D) an inorganic filler, and (E) an organic fine particle. An adhesive composition is provided.

本発明の接着剤組成物によれば、上記（Ａ）、（Ｂ）、（Ｃ）、（Ｄ）及び（Ｅ）成分を含むことにより、接続時の埋込性に優れ、ボイドの発生を十分に低減でき、接続信頼性に優れるフィルム状接着剤を形成することができる。   According to the adhesive composition of the present invention, by including the above components (A), (B), (C), (D) and (E), it is excellent in embedding at the time of connection and generation of voids. A film adhesive that can be sufficiently reduced and has excellent connection reliability can be formed.

また、本発明の接着剤組成物において、上記（Ａ）熱可塑性樹脂、上記（Ｂ）熱硬化性樹脂及び上記（Ｃ）潜在性硬化剤の総含有量を１００質量部としたとき、上記（Ｄ）無機フィラーの含有量が５０〜１５０質量部であり、上記（Ｅ）有機微粒子の含有量が５〜３０質量部であり、且つ、上記（Ｄ）無機フィラー及び上記（Ｅ）有機微粒子の含有量の合計が６５〜１６５質量部であることが好ましい。このような接着剤組成物は、埋込性と接続信頼性に一層優れるフィルム状接着剤を形成することができる。   In the adhesive composition of the present invention, when the total content of the (A) thermoplastic resin, the (B) thermosetting resin, and the (C) latent curing agent is 100 parts by mass, D) The content of the inorganic filler is 50 to 150 parts by mass, the content of the (E) organic fine particles is 5 to 30 parts by mass, and the (D) inorganic filler and the (E) organic fine particles The total content is preferably 65 to 165 parts by mass. Such an adhesive composition can form a film-like adhesive that is more excellent in embedding property and connection reliability.

本発明の接着剤組成物は、相対向する回路部材間に介在させ、上記回路部材同士を接着するために用いることができる。この場合、回路部材同士を熱圧着することにより、ボイド発生を抑制しつつ十分な接着力で接着することができる。これにより、接続信頼性に優れた接続体を得ることができる。回路部材としては、高密度化した回路を有する回路部材を使用でき、例えば、本発明の接着剤組成物は、シリコン貫通電極を備える回路部材を接続するために用いることができる。   The adhesive composition of the present invention can be used for interposing between circuit members facing each other and bonding the circuit members together. In this case, the circuit members can be bonded with a sufficient adhesive force while suppressing generation of voids by thermocompression bonding. Thereby, the connection body excellent in connection reliability can be obtained. As the circuit member, a circuit member having a densified circuit can be used. For example, the adhesive composition of the present invention can be used to connect a circuit member having a through silicon via.

本発明の接着剤シートは、支持基材と、該支持基材上に設けられ、上記本発明の接着剤組成物からなる接着剤層とを備える。   The adhesive sheet of this invention is equipped with a support base material and the adhesive bond layer which is provided on this support base material and consists of the adhesive composition of the said invention.

上記支持基材は、プラスチックフィルムと該プラスチックフィルム上に設けられた粘着剤層とを備え、上記接着剤層が粘着剤層上に設けられていることが好ましい。これにより、本発明の接着剤シートは、半導体ウエハのバックグラインド時に半導体ウエハを安定して保持することができる。   It is preferable that the support substrate includes a plastic film and a pressure-sensitive adhesive layer provided on the plastic film, and the adhesive layer is provided on the pressure-sensitive adhesive layer. Thereby, the adhesive sheet of this invention can hold | maintain a semiconductor wafer stably at the time of back grinding of a semiconductor wafer.

また、本発明の接着剤シートは、相対向する回路部材間に介在させ、上記回路部材同士を接着するために用いることができる。この場合、回路部材同士を熱圧着することにより、ボイド発生を抑制しつつ十分な接着力で接着することができる。これにより、接続信頼性に優れた接続体を得ることができる。   Further, the adhesive sheet of the present invention can be used for interposing between the circuit members facing each other and bonding the circuit members together. In this case, the circuit members can be bonded with a sufficient adhesive force while suppressing generation of voids by thermocompression bonding. Thereby, the connection body excellent in connection reliability can be obtained.

本発明はまた、主面の一方に複数の回路電極を有する半導体ウエハを準備し、該半導体ウエハの前記回路電極が設けられている側に、本発明の接着剤組成物からなる接着剤層を設ける工程と、上記半導体ウエハの前記回路電極が設けられている側とは反対側を研削して上記半導体ウエハを薄化する工程と、上記薄化した半導体ウエハ及び上記接着剤層をダイシングしてフィルム状接着剤付半導体素子に個片化する工程と、上記フィルム状接着剤付半導体素子の上記回路電極を半導体素子搭載用支持部材の回路電極にハンダ接合する工程とを備える、半導体装置の製造方法を提供する。   The present invention also provides a semiconductor wafer having a plurality of circuit electrodes on one of its main surfaces, and an adhesive layer made of the adhesive composition of the present invention is provided on the side of the semiconductor wafer on which the circuit electrodes are provided. A step of providing, a step of grinding the opposite side of the semiconductor wafer from the side on which the circuit electrodes are provided, thinning the semiconductor wafer, and dicing the thinned semiconductor wafer and the adhesive layer. Manufacturing of a semiconductor device comprising: a step of dividing into a semiconductor element with a film adhesive and a step of soldering the circuit electrode of the semiconductor element with a film adhesive to a circuit electrode of a support member for mounting a semiconductor element Provide a method.

本発明によれば、フィルム状にしたときの埋込性に十分に優れるとともに、接続信頼性に優れる半導体装置の作製を可能とする接着剤組成物及びそれを用いた接着剤シートを提供することができる。また、本発明の半導体装置の製造方法によれば、接続信頼性に優れた半導体装置を提供することができる。   According to the present invention, it is possible to provide an adhesive composition capable of producing a semiconductor device that is sufficiently excellent in embedding property when formed into a film and has excellent connection reliability, and an adhesive sheet using the same. Can do. Moreover, according to the method for manufacturing a semiconductor device of the present invention, a semiconductor device having excellent connection reliability can be provided.

本発明に係る回路部材接続用接着剤シートの好適な一実施形態を示す模式断面図である。1 is a schematic cross-sectional view showing a preferred embodiment of an adhesive sheet for connecting circuit members according to the present invention. 本発明に係る回路部材接続用接着剤シートの好適な一実施形態を示す模式断面図である。1 is a schematic cross-sectional view showing a preferred embodiment of an adhesive sheet for connecting circuit members according to the present invention. 本発明に係る半導体装置の製造方法の一実施形態を説明するための模式断面図である。It is a schematic cross section for explaining one embodiment of a manufacturing method of a semiconductor device concerning the present invention. 本発明に係る半導体装置の製造方法の一実施形態を説明するための模式断面図である。It is a schematic cross section for explaining one embodiment of a manufacturing method of a semiconductor device concerning the present invention. 本発明に係る半導体装置の製造方法の一実施形態を説明するための模式断面図である。It is a schematic cross section for explaining one embodiment of a manufacturing method of a semiconductor device concerning the present invention. 本発明に係る半導体装置の製造方法の一実施形態を説明するための模式断面図である。It is a schematic cross section for explaining one embodiment of a manufacturing method of a semiconductor device concerning the present invention. 本発明に係る半導体装置の製造方法の一実施形態を説明するための模式断面図である。It is a schematic cross section for explaining one embodiment of a manufacturing method of a semiconductor device concerning the present invention.

本発明に係る接着剤組成物、接着剤シート及び半導体装置の製造方法の好適な実施形態について以下に説明する。   Preferred embodiments of the method for producing an adhesive composition, an adhesive sheet and a semiconductor device according to the present invention will be described below.

本発明に係る接着剤シートは、回路部材接続用として用いることができる。図１は、本発明に係る回路部材接続用接着剤シートの好適な一実施形態を示す模式断面図である。図１に示す回路部材接続用接着剤シート１０は、支持基材３と、該支持基材３上に設けられ、本発明の接着剤組成物からなる接着剤層２と、接着剤層２を被覆する保護フィルム１とを備えている。   The adhesive sheet according to the present invention can be used for connecting circuit members. FIG. 1 is a schematic cross-sectional view showing a preferred embodiment of an adhesive sheet for connecting circuit members according to the present invention. An adhesive sheet 10 for connecting circuit members shown in FIG. 1 includes a support base 3, an adhesive layer 2 provided on the support base 3 and made of the adhesive composition of the present invention, and an adhesive layer 2. And a protective film 1 to be coated.

まず、本実施形態に係る接着剤層２を構成する接着剤組成物について説明する。   First, the adhesive composition constituting the adhesive layer 2 according to this embodiment will be described.

本実施形態に係る接着剤組成物は、（Ａ）熱可塑性樹脂と、（Ｂ）熱硬化性樹脂と、（Ｃ）潜在性硬化剤と、（Ｄ）無機フィラーと、（Ｅ）有機微粒子と、を含む。   The adhesive composition according to this embodiment includes (A) a thermoplastic resin, (B) a thermosetting resin, (C) a latent curing agent, (D) an inorganic filler, and (E) organic fine particles. ,including.

（Ａ）熱可塑性樹脂（以下、「（Ａ）成分」と称する。）としては、ポリエステル樹脂、ポリエーテル樹脂、ポリアミド樹脂、ポリアミドイミド樹脂、ポリイミド樹脂、ポリビニルブチラール樹脂、ポリビニルホルマール樹脂、フェノキシ樹脂、ポリヒドロキシポリエーテル樹脂、アクリル樹脂、ポリスチレン樹脂、ブタジエン樹脂、アクリロニトリル・ブタジエン共重合体、アクリロニトリル・ブタジエン・スチレン樹脂、スチレン・ブタジエン共重合体、アクリル酸共重合体が挙げられる。これらは、単独で又は２種以上を混合して使用することができる。   (A) As a thermoplastic resin (hereinafter referred to as “component (A)”), polyester resin, polyether resin, polyamide resin, polyamideimide resin, polyimide resin, polyvinyl butyral resin, polyvinyl formal resin, phenoxy resin, Examples include polyhydroxy polyether resins, acrylic resins, polystyrene resins, butadiene resins, acrylonitrile / butadiene copolymers, acrylonitrile / butadiene / styrene resins, styrene / butadiene copolymers, and acrylic acid copolymers. These can be used alone or in admixture of two or more.

（Ａ）成分は、接着剤組成物のフィルム形成性を良好にすることができる。フィルム形成性とは、液状の接着剤組成物を固形化し、フィルム状とした場合に、容易に裂けたり、割れたり、べたついたりしない機械特性を示すものである。通常の状態（例えば、常温）でフィルムとしての取扱いが容易であると、フィルム形成性が良好であるといえる。上述した熱可塑性樹脂の中でも、耐熱性及び機械強度に優れることから、ポリイミド樹脂やフェノキシ樹脂を使用することが好ましい。   The component (A) can improve the film forming property of the adhesive composition. Film-forming property indicates mechanical properties that do not easily tear, break, or stick when a liquid adhesive composition is solidified to form a film. If the film is easy to handle in a normal state (for example, room temperature), it can be said that the film formability is good. Among the thermoplastic resins described above, it is preferable to use a polyimide resin or a phenoxy resin because of excellent heat resistance and mechanical strength.

（Ａ）成分の重量平均分子量は２万〜８０万であることが好ましく、３万〜５０万であることがより好ましく、４万〜１０万であることが更に好ましく、４万〜８万であることが特に好ましい。重量平均分子量がこの範囲にあると、シート状又はフィルム状とした接着剤層２の強度、可とう性を良好にバランスさせることが容易となるとともに接着剤層２のフロー性が良好となるため、配線の回路充填性（埋込性）を十分確保できる。なお、本明細書において、重量平均分子量とは、ゲルパーミュエーションクロマトグラフィーで測定し、標準ポリスチレン検量線を用いて換算した値を示す。   The weight average molecular weight of the component (A) is preferably 20,000 to 800,000, more preferably 30,000 to 500,000, still more preferably 40,000 to 100,000, and 40,000 to 80,000. It is particularly preferred. When the weight average molecular weight is within this range, it becomes easy to satisfactorily balance the strength and flexibility of the adhesive layer 2 in the form of a sheet or film, and the flowability of the adhesive layer 2 becomes good. The circuit filling property (embedding property) of the wiring can be sufficiently secured. In the present specification, the weight average molecular weight is a value measured by gel permeation chromatography and converted using a standard polystyrene calibration curve.

また、フィルム形成性を維持しつつ、硬化前の接着剤層２に粘接着性を付与する観点から、（Ａ）成分のガラス転移温度は、２０〜１７０℃であることが好ましく、２５〜１２０℃がより好ましい。（Ａ）成分のガラス転移温度が２０℃未満では室温でのフィルム形成性が低下し、バックグラインド工程での半導体ウエハの加工中に接着剤層２が変形し易くなる傾向があり、１７０℃を超えると接着剤層２を半導体ウエハに貼り付ける際の貼付温度が１７０℃よりも高温にする必要が生じるため、（Ｂ）成分の熱硬化反応が進行し、接着剤層２の流動性が低下して接続不良が発生し易くなる傾向がある。   Moreover, it is preferable that the glass transition temperature of (A) component is 20-170 degreeC from a viewpoint which provides adhesiveness to the adhesive bond layer 2 before hardening, maintaining film formation. 120 ° C. is more preferable. When the glass transition temperature of the component (A) is less than 20 ° C., the film formability at room temperature is lowered, and the adhesive layer 2 tends to be deformed during the processing of the semiconductor wafer in the back grinding process. If it exceeds, the adhesive temperature when the adhesive layer 2 is applied to the semiconductor wafer needs to be higher than 170 ° C., so that the thermosetting reaction of the component (B) proceeds and the fluidity of the adhesive layer 2 decreases. As a result, poor connection tends to occur.

（Ａ）成分の含有量は、（Ａ）、（Ｂ）及び（Ｃ）成分の合計１００質量部に対して、１０〜５０質量部とすることが好ましく、１５〜５０質量部とすることがより好ましく、２０〜４０質量部とすることが更に好ましく、２５〜３５質量部とすることが特に好ましい。（Ａ）成分の含有量を上記範囲内とすることで、接着剤組成物のフィルム形成性が一層良好になり、熱圧着時に適度な流動性を示すようになり、バンプと回路電極との間の樹脂排除性が一層良好になる。具体的には、（Ａ）成分の含有量が１０質量部以上であると、フィルム形成性が一層良好となり、支持基材と保護フィルムの脇から接着剤組成物がはみ出したりする不良の発生が、より確実に防止される。また、（Ａ）成分の含有量が５０質量部以下であると、熱圧着時に適度な流動性を有するようになり、バンプと回路電極との間の排除性が良好となり、接続不良の発生がより確実に防止される。   The content of the component (A) is preferably 10 to 50 parts by mass, and preferably 15 to 50 parts by mass with respect to 100 parts by mass in total of the components (A), (B) and (C). More preferably, it is more preferably 20 to 40 parts by mass, and particularly preferably 25 to 35 parts by mass. (A) By making content of a component into the said range, the film formation property of an adhesive composition becomes much better, and comes to show moderate fluidity at the time of thermocompression bonding, and between a bump and a circuit electrode. The resin rejection is further improved. Specifically, when the content of the component (A) is 10 parts by mass or more, the film formability is further improved, and the occurrence of a defect in which the adhesive composition protrudes from the side of the support substrate and the protective film occurs. , More reliably prevented. Further, when the content of the component (A) is 50 parts by mass or less, it has appropriate fluidity at the time of thermocompression bonding, the exclusion property between the bump and the circuit electrode becomes good, and the occurrence of poor connection occurs. More reliably prevented.

（Ｂ）熱硬化性樹脂（以下、「（Ｂ）成分」と称する。）としては、例えば、エポキシ樹脂、不飽和ポリエステル樹脂、メラミン樹脂、尿素樹脂、ジアリルフタレート樹脂、ビスマレイミド樹脂、トリアジン樹脂、ポリウレタン樹脂、フェノール樹脂、シアノアクリレート樹脂、ポリイソシアネート樹脂、フラン樹脂、レゾルシノール樹脂、キシレン樹脂、ベンゾグアナミン樹脂、シリコーン樹脂、シロキサン変性エポキシ樹脂及びシロキサン変性ポリアミドイミド樹脂が挙げられる。これらは単独で又は２種以上を混合して使用することができる。耐熱性及び接着性を向上する観点から、（Ｂ）成分として、エポキシ樹脂を含有することが好ましい。   (B) As the thermosetting resin (hereinafter referred to as “component (B)”), for example, epoxy resin, unsaturated polyester resin, melamine resin, urea resin, diallyl phthalate resin, bismaleimide resin, triazine resin, Examples include polyurethane resins, phenol resins, cyanoacrylate resins, polyisocyanate resins, furan resins, resorcinol resins, xylene resins, benzoguanamine resins, silicone resins, siloxane-modified epoxy resins, and siloxane-modified polyamideimide resins. These can be used alone or in admixture of two or more. From the viewpoint of improving heat resistance and adhesiveness, it is preferable to contain an epoxy resin as the component (B).

上記エポキシ樹脂としては、硬化して接着作用を有するものであれば特に限定されず、例えば、エポキシ樹脂ハンドブック（新保正樹編、日刊工業新聞社）等に記載されるエポキシ樹脂を広く使用することができる。具体的には、例えば、ビスフェノールＡ型エポキシなどの二官能エポキシ樹脂、フェノールノボラック型エポキシ樹脂やクレゾールノボラック型エポキシ樹脂等のノボラック型エポキシ樹脂、トリスフェノールメタン型エポキシ樹脂を使用することができる。また、多官能エポキシ樹脂、グリシジルアミン型エポキシ樹脂、複素環含有エポキシ樹脂又は脂環式エポキシ樹脂など、一般に知られているものを適用することができる。   The epoxy resin is not particularly limited as long as it is cured and has an adhesive action. For example, a wide range of epoxy resins described in the epoxy resin handbook (edited by Masaki Shinbo, Nikkan Kogyo Shimbun) can be used. it can. Specifically, for example, a bifunctional epoxy resin such as bisphenol A type epoxy, a novolac type epoxy resin such as a phenol novolac type epoxy resin or a cresol novolac type epoxy resin, or a trisphenolmethane type epoxy resin can be used. Moreover, what is generally known, such as a polyfunctional epoxy resin, a glycidyl amine type epoxy resin, a heterocyclic ring-containing epoxy resin, or an alicyclic epoxy resin, can be applied.

（Ｂ）成分の含有量は、（Ａ）、（Ｂ）及び（Ｃ）成分の合計１００質量部に対して、５〜８８質量部とすることが好ましく、２０〜５０質量部とすることがより好ましく、２０〜４０質量部とすることが更に好ましい。（Ｂ）成分の含有量を上記範囲内とすることで、硬化後の接着剤の耐熱性、接着性が優れるようになり、高信頼性が発現される。具体的には、（Ｂ）成分の含有量が５質量部以上であると、硬化物の凝集力が向上し、接続信頼性に一層優れるようになる。また、（Ｂ）成分の含有量が８８質量部以下であると、硬化前のフィルム状態において、フィルム状形体が保持されやすく、取り扱い性に優れる。   The content of the component (B) is preferably 5 to 88 parts by mass and preferably 20 to 50 parts by mass with respect to 100 parts by mass in total of the components (A), (B) and (C). More preferably, it is more preferable to set it as 20-40 mass parts. By making content of (B) component into the said range, the heat resistance of the adhesive after hardening and adhesiveness will become excellent, and high reliability will be expressed. Specifically, when the content of the component (B) is 5 parts by mass or more, the cohesive force of the cured product is improved and the connection reliability is further improved. Further, when the content of the component (B) is 88 parts by mass or less, the film-like shape is easily held in the film state before curing, and the handleability is excellent.

（Ｃ）潜在性硬化剤としては、例えば、フェノール系、イミダゾール系、ヒドラジド系、チオール系、ベンゾオキサジン、三フッ化ホウ素−アミン錯体、スルホニウム塩、アミンイミド、ポリアミンの塩、ジシアンジアミド及び有機過酸化物系の硬化剤を挙げることができる。可視時間を延長する観点から、これらの硬化剤を核とし高分子物質、無機物又は金属薄膜等で被覆してマイクロカプセル化したものを（Ｃ）成分として用いることが好ましい。   (C) Examples of latent curing agents include phenolic, imidazole, hydrazide, thiol, benzoxazine, boron trifluoride-amine complexes, sulfonium salts, amine imides, polyamine salts, dicyandiamide and organic peroxides. Mention may be made of system curing agents. From the viewpoint of extending the visible time, it is preferable to use, as the component (C), those encapsulated with a polymer substance, an inorganic substance, a metal thin film, or the like using these curing agents as a core and microencapsulated.

マイクロカプセル型の潜在性硬化剤としては、ポリウレタン、ポリスチレン、ゼラチン及びポリイソシアネート等の高分子物質、ケイ酸カルシウムやゼオライト等の無機物、又はニッケルや銅等の金属薄膜の被膜により上記硬化剤からなる核が実質的に覆われているものが挙げられる。   The microcapsule-type latent curing agent comprises the above curing agent by coating with a polymer material such as polyurethane, polystyrene, gelatin and polyisocyanate, an inorganic material such as calcium silicate or zeolite, or a metal thin film such as nickel or copper. One whose core is substantially covered is mentioned.

接着剤組成物が、半導体ウェハへの貼付、研削時の保護、ダイシング及び回路基板への接続を備える、一連の半導体装置製造工程に適用される場合、長期間の常温環境下への暴露や、熱、湿度、光等の外的因子の影響を受けることが考えられる。そのため、接着剤組成物としては、上述の半導体装置製造工程における外的因子の影響に対する耐性に優れ、一連の工程にわたって十分に使用可能な特性を保持できることが好ましい。   When the adhesive composition is applied to a series of semiconductor device manufacturing processes including application to a semiconductor wafer, protection during grinding, dicing and connection to a circuit board, exposure to a long-term ambient temperature environment, It may be affected by external factors such as heat, humidity and light. Therefore, it is preferable that the adhesive composition has excellent resistance to the influence of external factors in the above-described semiconductor device manufacturing process and can maintain sufficiently usable characteristics over a series of processes.

本実施形態に係る接着剤組成物は、上述のような外的因子の影響に対する耐性に優れるため、半導体装置製造における一連の工程にわたって、十分に使用可能な特性を保持することができる。そして、上記接着剤組成物は、（Ｃ）成分としてマイクロカプセル型潜在性硬化剤を用いることで、上述のような外的因子の影響に対する耐性に、一層優れるようになる。   Since the adhesive composition according to the present embodiment is excellent in resistance to the influence of the external factors as described above, it is possible to maintain sufficiently usable characteristics over a series of steps in manufacturing a semiconductor device. And the said adhesive composition comes to be further excellent in the tolerance with respect to the influence of the above external factors by using a microcapsule-type latent hardening | curing agent as (C) component.

マイクロカプセル型潜在性硬化剤の平均粒径は、好ましくは１０μｍ以下、より好ましくは５μｍ以下であり、このようなマイクロカプセル型潜在性硬化剤は反応開始温度が一層均一であり、当該マイクロカプセル型潜在性硬化剤を含む接着剤組成物の硬化開始温度も均一となる。また、平均粒経が１０μｍより大きくなると、接着剤組成物を硬化してフィルム状に成形した際の表面平坦性が十分に得られない場合がある。なお、表面平坦性が十分でないと、回路部材接続用として使用した際にピッチ間が十分に封止充填できないおそれがある。また、平均粒径の下限値は、１μｍ以上であることが好ましい。このようなマイクロカプセル型潜在性硬化剤は、フィルム形成時のワニスに使用される溶媒に対する耐溶剤性が高く、加熱加圧前の接着剤組成物の流動性を長時間維持することができる。これらのマイクロカプセル型潜在性硬化剤は、１種を単独で用いてもよく、２種以上を組み合わせて用いてもよい。   The average particle size of the microcapsule-type latent curing agent is preferably 10 μm or less, more preferably 5 μm or less. Such a microcapsule-type latent curing agent has a more uniform reaction start temperature, and the microcapsule-type latent curing agent The curing start temperature of the adhesive composition containing the latent curing agent is also uniform. Moreover, when average particle diameter becomes larger than 10 micrometers, the surface flatness at the time of hardening | curing an adhesive composition and shape | molding into a film form may not fully be obtained. If the surface flatness is not sufficient, there is a possibility that the gap between the pitches cannot be sufficiently sealed when used for connecting circuit members. Moreover, it is preferable that the lower limit of an average particle diameter is 1 micrometer or more. Such a microcapsule-type latent curing agent has high solvent resistance to the solvent used for the varnish during film formation, and can maintain the fluidity of the adhesive composition before heating and pressing for a long time. These microcapsule-type latent curing agents may be used alone or in combination of two or more.

本実施形態に係る接着剤組成物における（Ｃ）成分の含有量は、（Ａ）、（Ｂ）及び（Ｃ）成分の合計１００質量部に対して、２〜４５質量部であることが好ましく、１０〜４０質量部であることがより好ましく、２０〜４０質量部であることが更に好ましい。（Ｃ）成分の含有量が２質量部未満では、硬化反応が進み難くなる傾向にあり、４５質量部を超えると、接着剤組成物全量に占める硬化剤の割合が多くなりすぎるため相対的に熱硬化性樹脂の割合が少なくなり、耐熱性や接着性などの特性を悪化させる傾向にある。   The content of the component (C) in the adhesive composition according to this embodiment is preferably 2 to 45 parts by mass with respect to 100 parts by mass in total of the components (A), (B) and (C). 10 to 40 parts by mass is more preferable, and 20 to 40 parts by mass is even more preferable. When the content of the component (C) is less than 2 parts by mass, the curing reaction tends to be difficult to proceed. When the content exceeds 45 parts by mass, the proportion of the curing agent in the total amount of the adhesive composition is excessively increased. The proportion of the thermosetting resin decreases, and the characteristics such as heat resistance and adhesiveness tend to be deteriorated.

本実施形態に係る接着剤組成物は（Ｄ）無機フィラーを含むことで、硬化後の接着剤層２の吸湿率及び線膨張係数を低減し、弾性率を高くすることができため、作製される半導体装置の接続信頼性を向上することができる。また、（Ｄ）成分としては、接着剤層２における可視光の散乱を防止して可視光透過率を向上するために、可視光透過率を低減しない無機フィラーを選択することができる。可視光透過率の低下を抑制可能な（Ｄ）成分として、可視光の波長よりも細かい粒子径を有する無機フィラーを選択すること、あるいは、樹脂成分である（Ａ）、（Ｂ）及び（Ｃ）成分からなる樹脂組成物（以下、場合により「樹脂組成物」という）の屈折率に近似の屈折率を有する無機フィラーを選択することが好ましい。   The adhesive composition according to the present embodiment includes (D) an inorganic filler, so that the moisture absorption rate and the linear expansion coefficient of the cured adhesive layer 2 can be reduced and the elastic modulus can be increased. The connection reliability of the semiconductor device can be improved. As the component (D), an inorganic filler that does not reduce visible light transmittance can be selected in order to prevent visible light scattering in the adhesive layer 2 and improve visible light transmittance. As the component (D) capable of suppressing a decrease in visible light transmittance, an inorganic filler having a particle diameter finer than the wavelength of visible light is selected, or resin components (A), (B) and (C) It is preferable to select an inorganic filler having a refractive index close to the refractive index of a resin composition comprising the component (hereinafter sometimes referred to as “resin composition”).

可視光の波長よりも細かい粒子径を有する無機フィラーとしては、透明性を有するフィラーであれば特にフィラーの組成に制限はなく、平均粒径０．３μｍ未満であることが好ましく、０．１μｍ以下であることがより好ましい。また、係る無機フィラーの屈折率は、１．４６〜１．７であることが好ましい。   The inorganic filler having a particle diameter finer than the wavelength of visible light is not particularly limited as long as it is a transparent filler, and the average particle diameter is preferably less than 0.3 μm, preferably 0.1 μm or less. It is more preferable that The refractive index of the inorganic filler is preferably 1.46 to 1.7.

樹脂組成物の屈折率に近似の屈折率を有する無機フィラーとしては、（Ａ）、（Ｂ）及び（Ｃ）成分からなる樹脂組成物を作製し屈折率を測定した後、該屈折率に近似の屈折率を有する無機フィラーを選定することができる。該無機フィラーとして、接着剤層２の半導体チップと回路基板との空隙への充填性の観点及び接続工程でのボイドの発生を抑制する観点から、微細なフィラーを用いることが好ましい。このような無機フィラーの平均粒径は、０．０１〜５μｍであることが好ましく、０．１〜２μｍであることがより好ましく、０．３〜１μｍであることが更に好ましい。平均粒径が０．０１μｍ未満では、粒子の被表面積が大きくなり接着剤組成物の粘度が増加して、無機フィラーの充填し難くなる傾向にある。   As an inorganic filler having a refractive index approximate to the refractive index of the resin composition, after preparing a resin composition comprising the components (A), (B) and (C) and measuring the refractive index, approximate the refractive index. An inorganic filler having a refractive index of 5 can be selected. As the inorganic filler, it is preferable to use a fine filler from the viewpoint of filling the gap between the semiconductor chip of the adhesive layer 2 and the circuit board and suppressing the generation of voids in the connecting step. The average particle diameter of such an inorganic filler is preferably 0.01 to 5 μm, more preferably 0.1 to 2 μm, and still more preferably 0.3 to 1 μm. When the average particle size is less than 0.01 μm, the surface area of the particles increases, the viscosity of the adhesive composition increases, and it tends to be difficult to fill the inorganic filler.

樹脂組成物の屈折率に近似の屈折率を有する無機フィラーの屈折率は、樹脂組成物の屈折率±０．０６の範囲であることが好ましい。例えば、樹脂組成物の屈折率が１．６０であった場合、屈折率が１．５４〜１．６６である無機フィラーを好適に用いることができる。屈折率は、アッベ屈折計を用いナトリウムＤ線（５８９ｎｍ）を光源として測定することができる。このような無機フィラーとしては、複合酸化物フィラー、複合水酸化物フィラー、硫酸バリウム及び粘度鉱物が挙げられ、具体的には、コージェライト、フォルスライト、ムライト、硫酸バリウム、水酸化マグネシウム、ホウ酸アルミニウム、バリウム又はシリカチタニアを使用することができる。また、シリカ、ケイ酸カルシウム、アルミナ、炭酸カルシウム等も使用することができる。   The refractive index of the inorganic filler having a refractive index approximate to the refractive index of the resin composition is preferably in the range of the refractive index ± 0.06 of the resin composition. For example, when the refractive index of the resin composition is 1.60, an inorganic filler having a refractive index of 1.54 to 1.66 can be suitably used. The refractive index can be measured using an Abbe refractometer with sodium D line (589 nm) as a light source. Examples of such inorganic fillers include composite oxide fillers, composite hydroxide fillers, barium sulfate and viscosity minerals. Specifically, cordierite, falselite, mullite, barium sulfate, magnesium hydroxide, boric acid Aluminum, barium or silica titania can be used. Silica, calcium silicate, alumina, calcium carbonate and the like can also be used.

なお、上述した２タイプの無機フィラーは組み合わせて用いてもよいし、同一タイプ内の無機フィラーの２種以上を組み合わせて用いてもよい。ただし、接着剤組成物の粘度増加を妨げないためには、可視光の波長よりも細かい粒子径を有する無機フィラーの添加量を、（A)成分、（Ｂ）成分及び（Ｃ）成分からなる樹脂組成物の全量基準で、１０質量％未満とすることが好ましい。   The two types of inorganic fillers described above may be used in combination, or two or more types of inorganic fillers in the same type may be used in combination. However, in order not to hinder the increase in viscosity of the adhesive composition, the addition amount of the inorganic filler having a particle diameter finer than the wavelength of visible light is composed of (A) component, (B) component and (C) component. It is preferable to make it less than 10 mass% on the basis of the total amount of the resin composition.

また、（Ｄ）成分は、接着剤層２の弾性率を向上する観点から、線膨張係数が０〜７００℃の温度範囲で７×１０−６／℃以下であることが好ましく、３×１０−６／℃以下であることがより好ましい。 The component (D) is preferably 7 × 10 −6 / ° C. or less in the temperature range of 0 to 700 ° C. from the viewpoint of improving the elastic modulus of the adhesive layer 2, and 3 × 10. More preferably, it is −6 / ° C. or lower.

（Ｄ）成分の配合量は、樹脂成分である（Ａ）、（Ｂ）及び（Ｃ）成分の合計１００質量部に対して、２５〜２００質量部であることが好ましく、５０〜１５０質量部でることがより好ましく、７５〜１２５質量部であることが更に好ましい。（Ｄ）成分の配合量が２５質量部未満では接着剤組成物から形成される接着剤層の線膨張係数の増大と弾性率の低下を招くため、圧着後の半導体チップと基板との接続信頼性が低下し易く、さらに、接続時のボイド抑制効果も得られ難くなる。一方、（Ｄ）成分の配合量が２００質量部を超えると、接着剤組成物の溶融粘度が増加し、半導体チップと接着剤層との界面又は回路基板と接着剤層との界面の濡れ性が低下することによって、剥離又は埋め込み不足によるボイドの残留が起き易くなる。   The blending amount of the component (D) is preferably 25 to 200 parts by weight, and 50 to 150 parts by weight with respect to a total of 100 parts by weight of the components (A), (B) and (C). It is more preferable that it is 75 to 125 parts by mass. If the blending amount of the component (D) is less than 25 parts by mass, the linear expansion coefficient of the adhesive layer formed from the adhesive composition is increased and the elastic modulus is decreased. It is difficult to obtain a void suppressing effect at the time of connection. On the other hand, when the blending amount of component (D) exceeds 200 parts by mass, the melt viscosity of the adhesive composition increases, and the wettability of the interface between the semiconductor chip and the adhesive layer or the interface between the circuit board and the adhesive layer. As a result of the decrease, voids remain due to peeling or insufficient embedding.

（Ｅ）有機微粒子としては、例えば、アクリル樹脂、シリコーン樹脂、ブタジエンゴム、ポリエステル、ポリウレタン、ポリビニルブチラール、ポリアリレート、ポリメチルメタクリレート、アクリルゴム、ポリスチレン、ＮＢＲ、ＳＢＲ、シリコーン変性樹脂等を成分として含む共重合体が挙げられる。有機微粒子としては、分子量が１００万以上の有機微粒子又は三次元架橋構造を有する有機微粒子が好ましい。このような有機微粒子は接着剤組成物への分散性が高い。また、このような有機微粒子を含む接着剤組成物は、接着性と硬化後の応力緩和性に一層優れる。なお、ここで「三次元架橋構造を有する」とは、ポリマー鎖が三次元網目構造を有していることを示し、このような構造を有する有機微粒子は、例えば、反応点を複数有するポリマーを当該反応点と結合しうる官能基を二つ以上有する架橋剤で処理することで得られる。分子量が１００万以上の有機微粒子、三次元架橋構造を有する有機微粒子は、いずれも溶媒への溶解性が低いことが好ましい。溶媒への溶解性が低いこれらの有機微粒子は、上述の効果を一層顕著に得ることができる。また、上述の効果を一層顕著に得る観点からは、分子量が１００万以上の有機微粒子及び三次元架橋構造を有する有機微粒子は、（メタ）アクリル酸アルキル−シリコーン共重合体、シリコーン−（メタ）アクリル共重合体又はこれらの複合体からなる有機微粒子であることが好ましい。また、特開２００８−１５０５７３公報に記載されるようなポリアミック酸粒子、ポリイミド粒子等の有機微粒子も使用することができる。   (E) Organic fine particles include, for example, acrylic resin, silicone resin, butadiene rubber, polyester, polyurethane, polyvinyl butyral, polyarylate, polymethyl methacrylate, acrylic rubber, polystyrene, NBR, SBR, silicone-modified resin and the like as components. A copolymer is mentioned. As the organic fine particles, organic fine particles having a molecular weight of 1 million or more or organic fine particles having a three-dimensional crosslinked structure are preferable. Such organic fine particles have high dispersibility in the adhesive composition. Moreover, the adhesive composition containing such organic fine particles is further excellent in adhesiveness and stress relaxation property after curing. Here, “having a three-dimensional crosslinked structure” means that the polymer chain has a three-dimensional network structure, and the organic fine particles having such a structure include, for example, a polymer having a plurality of reaction points. It can be obtained by treating with a crosslinking agent having two or more functional groups capable of binding to the reaction site. It is preferable that both organic fine particles having a molecular weight of 1 million or more and organic fine particles having a three-dimensional crosslinked structure have low solubility in a solvent. These organic fine particles having low solubility in a solvent can obtain the above-described effects more remarkably. In addition, from the viewpoint of obtaining the above-described effect more remarkably, organic fine particles having a molecular weight of 1 million or more and organic fine particles having a three-dimensional crosslinked structure are (meth) acrylic acid alkyl-silicone copolymer, silicone- (meth). Organic fine particles made of an acrylic copolymer or a composite thereof are preferable. Further, organic fine particles such as polyamic acid particles and polyimide particles as described in JP-A-2008-150573 can also be used.

（Ｅ）成分として、コアシェル型の構造を有し、コア層とシェル層で組成が異なる有機微粒子を用いることもできる。コアシェル型の有機微粒子として、具体的には、シリコーン−アクリルゴムをコアとしてアクリル樹脂をグラフトした粒子、アクリル共重合体をコアとしてアクリル樹脂をグラフトとした粒子等が挙げられる。また、ＷＯ２００９／０５１０６７公報に記載されるようなコアシェル型シリコーン微粒子や、ＷＯ２００９／０２０００５公報に記載されるような（メタ）アクリル酸アルキルエステル−ブタジエン−スチレン共重合体又は複合体、（メタ）アクリル酸アルキルエステル−シリコーン共重合体又は複合体、シリコーン−（メタ）アクリル酸共重合体又は複合体等の有機微粒子や、特開２００２−２５６０３７公報に記載されるようなコアシェル構造重合体粒子や、特開２００４−１８８０３に記載されるようなコアシェル構造のゴム粒子、なども使用することができる。これらのコアシェル型の有機微粒子は、１種を単独で用いてもよく、また、２種以上を組み合わせて用いてもよい。   As the component (E), organic fine particles having a core-shell structure and having different compositions in the core layer and the shell layer can also be used. Specific examples of the core-shell type organic fine particles include particles obtained by grafting an acrylic resin with a silicone-acrylic rubber core, and particles obtained by grafting an acrylic resin with an acrylic copolymer as a core. Further, core-shell type silicone fine particles as described in WO2009 / 051067, (meth) acrylic acid alkyl ester-butadiene-styrene copolymer or composite as described in WO2009 / 020005, (meth) acrylic Organic fine particles such as acid alkyl ester-silicone copolymer or composite, silicone- (meth) acrylic acid copolymer or composite, core-shell structure polymer particles as described in JP-A-2002-256037, Rubber particles having a core-shell structure as described in JP-A-2004-18803 can also be used. These core-shell type organic fine particles may be used alone or in combination of two or more.

（Ｅ）成分が、分子量が１００万以上の有機微粒子又は三次元架橋構造を有する有機微粒子である場合、有機溶剤への溶解性が低いことから、粒子形状を維持したままで接着剤組成物中に配合することができる。そのため、硬化後の接着剤層２中に有機微粒子が島状に分散し、接続体の強度が向上する。なお、（Ｅ）成分は、応力緩和性を有する耐衝撃緩和剤としての機能を有するものである。   In the case where the component (E) is an organic fine particle having a molecular weight of 1 million or more or an organic fine particle having a three-dimensional cross-linked structure, the solubility in an organic solvent is low. Can be blended. Therefore, the organic fine particles are dispersed in an island shape in the adhesive layer 2 after curing, and the strength of the connection body is improved. In addition, (E) component has a function as an impact-resistant relaxation agent which has stress relaxation property.

（Ｅ）成分は、平均粒径が０．１〜２μｍであることが好ましい。より好ましくは０．１〜０．９μｍである。（Ｅ）成分の平均粒径が０．１μｍ未満では接着剤組成物の溶融粘度が増加し、回路部材接続時にはんだがもちいられる場合に、そのはんだ濡れ性を妨げる傾向あり、２μｍを超えると溶融粘度の低減効果が少なくなり、接続時にボイド抑制効果が得られ難い傾向にある。   (E) It is preferable that an average particle diameter is 0.1-2 micrometers. More preferably, it is 0.1-0.9 micrometer. When the average particle size of the component (E) is less than 0.1 μm, the melt viscosity of the adhesive composition increases, and when solder is used when connecting circuit members, the solder wettability tends to be hindered. The effect of reducing the viscosity is reduced, and a void suppressing effect tends to be hardly obtained at the time of connection.

（Ｅ）成分は、接続時のボイド抑制と、接続後の応力緩和効果を接着剤層２に付与させるため、（Ａ）、（Ｂ）及び（Ｃ）成分の合計１００質量部に対して、５〜３０質量部であることが好ましい。（Ｅ）成分の配合量が５質量部未満では接続時のボイドを抑制する効果を奏し難くなると共に応力緩和効果も発現され難くなる傾向があり、３０質量部を超えると流動性が低くなるためハンダ濡れ性が低下し残留ボイドの原因となると共に硬化物の弾性率が低くなりすぎて接続信頼性が低下する傾向にある。   (E) component, in order to impart void suppression at the time of connection and stress relaxation effect after connection to the adhesive layer 2, for a total of 100 parts by mass of (A), (B) and (C) components, It is preferable that it is 5-30 mass parts. When the blending amount of the component (E) is less than 5 parts by mass, the effect of suppressing voids at the time of connection tends to be difficult and the stress relaxation effect tends to be hardly exhibited, and when it exceeds 30 parts by mass, the fluidity decreases. Solder wettability decreases and causes residual voids, and the elastic modulus of the cured product tends to be too low, leading to a decrease in connection reliability.

ボイドを十分に抑制し、接続後の応力緩和効果に優れ、且つ、吸湿率及び線膨張係数を低減し弾性率を高くする観点から、（Ａ）成分、（Ｂ）成分及び（Ｃ）成分の総含有量１００質量部に対して、（Ｄ）成分の含有量が５０〜１５０質量部であり、（Ｅ）成分の含有量が５〜３０質量部であり、且つ、（Ｄ）成分及び（Ｅ）成分の含有量の合計が６５〜１６５質量部であることが好ましい。また、（Ｄ）成分の含有量が５０〜１３０質量部であり、（Ｅ）成分の含有量が７〜２０質量部であり、且つ、（Ｄ）成分及び（Ｅ）成分の含有量の合計が６５〜１３２質量部であることがより好ましく、（Ｄ）成分の含有量が５０〜１１０質量部であり、（Ｅ）成分の含有量が１０〜２０質量部であり、且つ、（Ｄ）成分及び（Ｅ）成分の含有量の合計が６５〜１１０質量部であることがさらに好ましい。   From the viewpoints of sufficiently suppressing voids, excellent stress relaxation effect after connection, and reducing the moisture absorption rate and linear expansion coefficient to increase the elastic modulus, the components (A), (B) and (C) The content of the component (D) is 50 to 150 parts by mass with respect to the total content of 100 parts by mass, the content of the component (E) is 5 to 30 parts by mass, and the component (D) and ( E) The total content of the components is preferably 65 to 165 parts by mass. Moreover, content of (D) component is 50-130 mass parts, content of (E) component is 7-20 mass parts, and the sum total of content of (D) component and (E) component Is more preferably 65 to 132 parts by mass, the content of the component (D) is 50 to 110 parts by mass, the content of the component (E) is 10 to 20 parts by mass, and (D) The total content of the component and the component (E) is more preferably 65 to 110 parts by mass.

（Ｄ）成分の配合量が５０質量部未満では接着剤組成物から形成される接着剤層のバルク強度が低く、耐熱試験での接続信頼性が低下する傾向にあり、（Ｄ）成分の配合量が１５０質量部より多い場合は接着剤組成物のチクソ性が高くなりすぎ、はく離不良が増加する傾向にある。また、（Ｄ）成分と（Ｅ）成分の含有量の合計が６５質量部以上であるとボイドの抑制効果が一層向上するため好ましく、１６５質量部以下であると接着剤組成物が回路部材接続用として好適な流動性を維持し、界面の濡れ性が向上し、はく離不良抑制効果に一層優れるため好ましい。また、（Ｄ）成分と（Ｅ）成分の含有量の合計が１６５質量部より多いと、接続抵抗が悪化する傾向がある。   When the blending amount of the component (D) is less than 50 parts by mass, the bulk strength of the adhesive layer formed from the adhesive composition is low, and the connection reliability in the heat resistance test tends to decrease, and the blending of the component (D) When the amount is more than 150 parts by mass, the thixotropy of the adhesive composition becomes too high, and the peeling failure tends to increase. Moreover, since the suppression effect of a void improves further that the sum total of content of (D) component and (E) component is 65 mass parts or more, an adhesive composition is circuit member connection as it is 165 mass parts or less. It is preferable because the fluidity suitable for use is maintained, the wettability of the interface is improved, and the effect of suppressing separation failure is further improved. Moreover, when there is more sum total of content of (D) component and (E) component than 165 mass parts, there exists a tendency for connection resistance to deteriorate.

また、（Ｅ）成分の含有量は、（Ｄ）成分１００質量部に対して、５〜１００質量部であると好ましく、５〜６０質量部であるとより好ましく、１０〜３０質量部であるとさらに好ましい。（Ｅ）成分の含有量が、（Ｄ）成分１００質量部に対して５質量部以上であると、接着剤組成物の変形性が良好となり、被着体界面でのはく離不良抑制効果に優れる。また、１００質量部より多いと、無機フィラーによる熱膨張抑制効果が得られなくなるため、接続信頼性が悪化する。一方、（D）成分が過剰に存在する場合、チクソ性が高くなりすぎるため、被着体界面への濡れが不十分となり、接続性が低下する。   Moreover, content of (E) component is preferable in it being 5-100 mass parts with respect to 100 mass parts of (D) component, It is more preferable in it being 5-60 mass parts, It is 10-30 mass parts. And more preferred. When the content of the component (E) is 5 parts by mass or more with respect to 100 parts by mass of the component (D), the deformability of the adhesive composition is improved, and the effect of suppressing peeling failure at the adherend interface is excellent. . On the other hand, if the amount is more than 100 parts by mass, the thermal expansion suppressing effect by the inorganic filler cannot be obtained, and the connection reliability is deteriorated. On the other hand, when the component (D) is excessively present, the thixotropy becomes too high, so that wetting on the adherend interface becomes insufficient and the connectivity is lowered.

本実施形態に係る接着剤組成物には、無機フィラーの表面を改質し異種材料間の界面結合を向上させ接着強度を増大するために、各種カップリング剤を添加することもできる。カップリング剤としては、例えば、シラン系、チタン系及びアルミニウム系のカップリング剤が挙げられ、中でも効果が高い点でシラン系カップリング剤が好ましい。   Various coupling agents can be added to the adhesive composition according to this embodiment in order to modify the surface of the inorganic filler to improve the interfacial bond between different materials and increase the adhesive strength. Examples of the coupling agent include silane-based, titanium-based, and aluminum-based coupling agents. Among them, a silane-based coupling agent is preferable because it is highly effective.

シラン系カップリング剤としては、例えば、γ−メタクリロキシプロピルトリメトキシシラン、γ−メタクリロキシプロピルメチルジメトキシシラン、γ−メルカプトプロピルトリメトキシシラン、γ−メルカプトプロピルトリエトキシシラン、３−アミノプロピルメチルジエトキシシラン、３−ウレイドプロピルトリエトキシシラン、３−ウレイドプロピルトリメトキシシランが挙げられる。これらは単独で又は２種以上を組み合わせて使用することができる。   Examples of the silane coupling agent include γ-methacryloxypropyltrimethoxysilane, γ-methacryloxypropylmethyldimethoxysilane, γ-mercaptopropyltrimethoxysilane, γ-mercaptopropyltriethoxysilane, and 3-aminopropylmethyldisilane. Examples include ethoxysilane, 3-ureidopropyltriethoxysilane, and 3-ureidopropyltrimethoxysilane. These can be used alone or in combination of two or more.

本実施形態に係る接着剤組成物には、イオン性不純物を吸着して、吸湿時の絶縁信頼性を向上するために、イオン捕捉剤を添加することもできる。このようなイオン捕捉剤としては特に制限はなく、例えば、トリアジンチオール化合物、ビスフェノール系還元剤等の銅がイオン化して溶け出すのを防止するため銅害防止剤として知られる化合物、ジルコニウム系、アンチモンビスマス系マグネシウムアルミニウム化合物等の無機イオン吸着剤が挙げられる。   An ion scavenger can be added to the adhesive composition according to the present embodiment in order to adsorb ionic impurities and improve insulation reliability during moisture absorption. There are no particular restrictions on such ion scavengers, for example, triazine thiol compounds, bisphenol reducing agents, etc., compounds known as copper damage inhibitors to prevent ionization and dissolution, zirconium-based, antimony, etc. Examples include inorganic ion adsorbents such as bismuth-based magnesium aluminum compounds.

接着剤組成物は、半導体チップと回路基板とを接続した後の温度変化や、加熱吸湿による膨張等を抑制し、高接続信頼性を達成するため、硬化後の接着剤層２の４０〜１００℃における線膨張係数が６０×１０−６／℃以下であることが好ましく、５５×１０−６／℃以下であることがより好ましく、５０×１０−６／℃以下であることが更に好ましい。硬化後の接着剤層２の線膨張係数が６０×１０−６／℃を超えると、実装後の温度変化や加熱吸湿による膨張によって半導体チップの接続端子と回路基板の配線との間での電気的接続が保持できなくなる場合がある。また、本発明の接着剤組成物に導電粒子を含有させて異方導電性接着フィルム（ＡＣＦ）とすることができるが、導電粒子を含有させずに非導電性接着フィルム（ＮＣＦ）とすることが好ましい。 The adhesive composition suppresses temperature change after connecting the semiconductor chip and the circuit board, expansion due to heat absorption, etc., and achieves high connection reliability. The linear expansion coefficient at 60 ° C. is preferably 60 × 10 −6 / ° C. or less, more preferably 55 × 10 −6 / ° C. or less, and further preferably 50 × 10 −6 / ° C. or less. When the linear expansion coefficient of the adhesive layer 2 after curing exceeds 60 × 10 −6 / ° C., electricity between the connection terminals of the semiconductor chip and the wiring of the circuit board is caused by temperature change after mounting or expansion due to heat absorption. Connection may not be maintained. Moreover, although the electroconductive particle can be made to contain in the adhesive composition of this invention and it can be set as an anisotropic conductive adhesive film (ACF), it is set as a nonelectroconductive adhesive film (NCF) without containing electroconductive particle. Is preferred.

本実施形態に係る接着剤組成物から形成される接着剤層２は、２５０℃１０秒加熱した後、示差走査熱量測定（以下、「ＤＳＣ」という）で測定される反応率が６０％以上であることが好ましく、７０％以上であることがより好ましい。また、回路部材接続用組成物シートを室温で１４日間保管した後、ＤＳＣで測定される接着剤層２の反応率が１０％未満であることが好ましい。これにより、本実施形態に係る接着剤組成物を用いることで、接続時の反応性に十分に優れ、かつ、保存安定性にも優れるフィルム状接着剤を得ることができる。   The adhesive layer 2 formed from the adhesive composition according to the present embodiment has a reaction rate of 60% or more measured by differential scanning calorimetry (hereinafter referred to as “DSC”) after heating at 250 ° C. for 10 seconds. It is preferable that it is 70% or more. Moreover, it is preferable that the reaction rate of the adhesive layer 2 measured by DSC is less than 10% after storing the circuit composition connecting composition sheet for 14 days at room temperature. Thereby, by using the adhesive composition according to the present embodiment, it is possible to obtain a film adhesive that is sufficiently excellent in reactivity at the time of connection and excellent in storage stability.

接着剤層２は、未硬化時の可視光透過率が５％以上であることが好ましく、可視光透過率が８％以上であることがより好ましく、可視光透過率が１０％以上であることが更に好ましい。可視光透過率が５％未満ではフリップチップボンダーでの認識マーク識別が行えなくなり、位置合わせ作業ができなくなる傾向がある。一方、可視光透過率の上限に関しては特に制限はない。   The adhesive layer 2 preferably has an uncured visible light transmittance of 5% or more, more preferably a visible light transmittance of 8% or more, and a visible light transmittance of 10% or more. Is more preferable. If the visible light transmittance is less than 5%, the recognition mark cannot be identified by the flip chip bonder, and the alignment work tends to be impossible. On the other hand, there is no particular limitation on the upper limit of the visible light transmittance.

可視光透過率は、日立製Ｕ−３３１０形分光光度計をもちいて測定することができる。例えば、膜厚５０μｍの帝人デュポン製ＰＥＴフィルム（ピューレックス、５５５ｎｍ透過率８６．０３％）を基準物質としてベースライン補正測定を行った後、ＰＥＴフィルムに２５μｍの厚みで接着剤層２を形成した後、４００〜８００ｎｍの可視光領域の透過率を測定する。フリップチップボンダーで使用されるハロゲン光源とライトガイドの波長相対強度において５５０〜６００ｎｍが最も強いことから、本明細書においては５５５ｎｍにおける透過率を用いて接着剤層２の透過率の比較を行っている。   The visible light transmittance can be measured using a Hitachi U-3310 spectrophotometer. For example, after a baseline correction measurement was performed using a Teijin DuPont PET film (Purex, 555 nm transmittance: 86.03%) having a thickness of 50 μm as a reference material, an adhesive layer 2 having a thickness of 25 μm was formed on the PET film. Thereafter, the transmittance in the visible light region of 400 to 800 nm is measured. Since the wavelength relative intensity of the halogen light source and light guide used in the flip chip bonder is the strongest at 550 to 600 nm, the transmittance of the adhesive layer 2 is compared using the transmittance at 555 nm in this specification. Yes.

接着剤層２は、上述した本発明に係る接着剤組成物を溶剤に溶解若しくは分散してワニスとし、このワニスを保護フィルム（以下、場合により「第一のフィルム」という）１上に塗布し、加熱により溶剤を除去することによって形成することができる。その後、接着剤層２に支持基材３を常温〜６０℃で積層し、本発明の回路部材接続用接着剤シートを得ることができる。また、接着剤層２は、上記ワニスを支持基材３上に塗布し、加熱により溶剤を除去することによって形成することもできる。   The adhesive layer 2 is obtained by dissolving or dispersing the above-described adhesive composition according to the present invention in a solvent to form a varnish, and applying the varnish on a protective film (hereinafter, sometimes referred to as “first film”) 1. It can be formed by removing the solvent by heating. Then, the support base material 3 is laminated | stacked at normal temperature-60 degreeC on the adhesive bond layer 2, and the adhesive sheet for circuit member connection of this invention can be obtained. Alternatively, the adhesive layer 2 can be formed by applying the varnish on the support substrate 3 and removing the solvent by heating.

用いる溶剤は、特に限定されないが、接着剤層形成時の揮発性などを沸点から考慮して決めることが好ましい。具体的には、例えば、メタノール、エタノール、２−メトキシエタノール、２−エトキシエタノール、２−ブトキシエタノール、メチルエチルケトン、アセトン、メチルイソブチルケトン、トルエン、キシレン等の比較的低沸点の溶媒は接着剤層形成時に接着剤層の硬化が進みにくい点で好ましい。これらの溶媒は、１種を単独で又は２種以上を組み合わせて使用することができる。   The solvent to be used is not particularly limited, but is preferably determined in consideration of the volatility at the time of forming the adhesive layer from the boiling point. Specifically, for example, a solvent having a relatively low boiling point such as methanol, ethanol, 2-methoxyethanol, 2-ethoxyethanol, 2-butoxyethanol, methyl ethyl ketone, acetone, methyl isobutyl ketone, toluene, and xylene forms an adhesive layer. It is preferable in that the curing of the adhesive layer is difficult to proceed. These solvents can be used alone or in combination of two or more.

保護フィルム１としては、例えば、ポリエチレンテレフタレート、ポリテトラフルオロエチレンフィルム、ポリエチレンフィルム、ポリプロピレンフィルム、ポリメチルペンテンフィルム等のプラスチックフィルムを用いることができる。剥離性の観点から、保護フィルム１として、ポリテトラフルオロエチレンフィルムのようなフッ素樹脂からなる表面エネルギーの低いフィルムを用いることも好ましい。   As the protective film 1, plastic films, such as a polyethylene terephthalate, a polytetrafluoroethylene film, a polyethylene film, a polypropylene film, a polymethylpentene film, can be used, for example. From the viewpoint of peelability, it is also preferable to use a film having a low surface energy made of a fluororesin such as a polytetrafluoroethylene film as the protective film 1.

保護フィルム１の剥離性を向上するために、保護フィルム１の接着剤層２を形成する面をシリコーン系剥離剤、フッ素系剥離剤、長鎖アルキルアクリレート系剥離剤等の離型剤で処理することが好ましい。市販のものとして、例えば、帝人デュポンフィルム社製の「Ａ−６３」（離型処理剤：変性シリコーン系）や、「Ａ−３１」（離型処理剤：Ｐｔ系シリコーン系）を入手することができる。   In order to improve the peelability of the protective film 1, the surface of the protective film 1 on which the adhesive layer 2 is formed is treated with a release agent such as a silicone-based release agent, a fluorine-based release agent, or a long-chain alkyl acrylate-based release agent. It is preferable. As commercially available products, for example, “A-63” (release treatment agent: modified silicone type) or “A-31” (release treatment agent: Pt silicone type) manufactured by Teijin DuPont Films Ltd. Can do.

保護フィルム１は、厚みが１０〜１００μｍであることが好ましく、１０〜７５μｍであることがより好ましく、２５〜５０μｍであることが特に好ましい。この厚みが１０μｍ未満では塗工の際、保護フィルムが破れる傾向があり、１００μｍを超えると廉価性に劣る傾向がある。   The protective film 1 preferably has a thickness of 10 to 100 μm, more preferably 10 to 75 μm, and particularly preferably 25 to 50 μm. If the thickness is less than 10 μm, the protective film tends to be broken during coating, and if it exceeds 100 μm, the cost tends to be inferior.

上記ワニスを保護フィルム１（又は支持基材３）上に塗布する方法としては、ナイフコート法、ロールコート法、スプレーコート法、グラビアコート法、バーコート法、カーテンコート法等、一般に周知の方法が挙げられる。   As a method of applying the varnish on the protective film 1 (or the supporting substrate 3), generally known methods such as knife coating, roll coating, spray coating, gravure coating, bar coating, curtain coating, and the like are used. Is mentioned.

接着剤層２の厚みは、特に制限はないが、５〜２００μｍが好ましく、７〜１５０μｍであることがより好ましく、１０〜１００μｍであることが更に好ましい。厚みが５μｍより小さいと、十分な接着力を確保するのが困難となり、回路基板の凸電極を埋められなくなる傾向があり、２００μｍより厚いと経済的でなくなる上に、半導体装置の小型化の要求に応えることが困難となる。   Although there is no restriction | limiting in particular in the thickness of the adhesive bond layer 2, 5-200 micrometers is preferable, It is more preferable that it is 7-150 micrometers, It is still more preferable that it is 10-100 micrometers. If the thickness is less than 5 μm, it will be difficult to ensure sufficient adhesion, and the convex electrodes of the circuit board will not be filled. If it is thicker than 200 μm, it will not be economical, and there will be a demand for miniaturization of the semiconductor device. It becomes difficult to respond to.

支持基材３としては、例えば、ポリエチレンテレフタレートフィルム、ポリテトラフルオロエチレンフィルム、ポリエチレンフィルム、ポリプロピレンフィルム、ポリメチルペンテンフィルム、ポリビニルアセテートフィルム、ポリ塩化ビニルフィルム、ポリイミドフィルム等のプラスチックフィルムが挙げられる。また、支持基材３は、上記の材料から選ばれる２種以上が混合されたもの、又は、上記のフィルムが複層化されたものでもよい。   Examples of the supporting substrate 3 include plastic films such as a polyethylene terephthalate film, a polytetrafluoroethylene film, a polyethylene film, a polypropylene film, a polymethylpentene film, a polyvinyl acetate film, a polyvinyl chloride film, and a polyimide film. Further, the support base 3 may be a mixture of two or more selected from the above materials, or a multilayer of the above film.

支持基材３の厚みは、特に制限はないが、５〜２５０μｍが好ましい。厚みが５μｍより薄いと、半導体ウエハの研削（バックグラインド）時に支持基材が切れる可能性があり、２５０μｍより厚いと経済的でなくなるため好ましくない。   Although the thickness of the support base material 3 does not have a restriction | limiting in particular, 5-250 micrometers is preferable. If the thickness is less than 5 μm, the support substrate may be cut during grinding (back grinding) of the semiconductor wafer, and if it is more than 250 μm, it is not economical, which is not preferable.

支持基材３は、光透過性が高いことが好ましく、具体的には、５００〜８００ｎｍの波長域における最小光透過率が１０％以上であることが好ましい。   The support base material 3 preferably has high light transmittance. Specifically, the minimum light transmittance in a wavelength region of 500 to 800 nm is preferably 10% or more.

また、支持基材３として、上記プラスチックフィルム（以下、場合により「第二のフィルム」という）上に粘着剤層が積層されたものを用いることができる。   In addition, as the support base 3, a substrate in which an adhesive layer is laminated on the plastic film (hereinafter sometimes referred to as “second film”) can be used.

図２は、本発明に係る回路部材接続用接着剤シートの好適な一実施形態を示す模式断面図である。図２に示す回路部材接続用接着剤シート１１は、プラスチックフィルム３ｂと該プラスチックフィルム３ｂ上に設けられた粘着剤層３ａとを有する支持基材３と、該粘着剤層３ａ上に設けられ、本発明の接着剤組成物からなる接着剤層２と、接着剤層２を被覆する保護フィルム１とを備えている。   FIG. 2 is a schematic cross-sectional view showing a preferred embodiment of the adhesive sheet for connecting circuit members according to the present invention. The adhesive sheet 11 for connecting a circuit member shown in FIG. 2 is provided on a support substrate 3 having a plastic film 3b and an adhesive layer 3a provided on the plastic film 3b, and on the adhesive layer 3a. An adhesive layer 2 made of the adhesive composition of the present invention and a protective film 1 covering the adhesive layer 2 are provided.

第二のフィルム３ｂと粘着剤層３ａとの密着性を向上させるために、第二のフィルムの表面には、クロム酸処理、オゾン暴露、火炎暴露、高圧電撃暴露、イオン化放射線処理等の化学的又は物理的処理を施してもよい。   In order to improve the adhesion between the second film 3b and the pressure-sensitive adhesive layer 3a, the surface of the second film is subjected to chemical treatment such as chromic acid treatment, ozone exposure, flame exposure, high piezoelectric impact exposure, ionizing radiation treatment, etc. Or you may give a physical process.

粘着剤層３ａは、室温で粘着力があり、被着体に対する必要な密着力を有することが好ましく、かつ、放射線等の高エネルギー線や熱によって硬化する（すなわち、粘着力を低下させる）特性を備えるものが好ましい。粘着剤層３ａは、例えば、アクリル系樹脂、各種合成ゴム、天然ゴム、ポリイミド樹脂を用いて形成することができる。粘着剤層３ａの厚みは、通常５〜２５μｍ程度である。   The pressure-sensitive adhesive layer 3a has an adhesive force at room temperature, preferably has a necessary adhesion to an adherend, and is cured by high energy rays such as radiation or heat (that is, reduces the adhesive force). The thing provided with is preferable. The pressure-sensitive adhesive layer 3a can be formed using, for example, acrylic resin, various synthetic rubbers, natural rubber, or polyimide resin. The thickness of the pressure-sensitive adhesive layer 3a is usually about 5 to 25 μm.

上述した回路部材接続用接着剤シート１０及び１１は、相対向し接合される回路電極を有する回路部材と半導体素子との間又は半導体素子同士の間に介在させ、回路部材と半導体素子又は半導体素子同士を接着するために用いることができる。この場合、回路部材と半導体素子又は半導体素子同士を熱圧着することにより、ボイド発生を抑制しつつ十分な接着力で接着することができ、且つ、回路電極同士を良好に接合できる。これにより、接続信頼性に優れた接続体を得ることができる。また、回路部材接続用接着剤シート１０及び１１は、シリコン貫通電極を用いた積層技術における接着剤シートとして使用することもできる。   The circuit member connecting adhesive sheets 10 and 11 described above are interposed between a circuit member and a semiconductor element having circuit electrodes to be opposed to each other or between semiconductor elements, and the circuit member and the semiconductor element or semiconductor element. It can be used to bond them together. In this case, by thermocompression bonding the circuit member and the semiconductor element or the semiconductor elements, it is possible to bond with sufficient adhesive force while suppressing the generation of voids, and it is possible to bond the circuit electrodes satisfactorily. Thereby, the connection body excellent in connection reliability can be obtained. Moreover, the adhesive sheet 10 and 11 for circuit member connection can also be used as an adhesive sheet in the lamination | stacking technique using a silicon penetration electrode.

次に、回路部材接続用接着剤シート１０を用いて半導体装置を製造する方法について説明する。   Next, a method for manufacturing a semiconductor device using the adhesive sheet 10 for connecting circuit members will be described.

図３〜図７は、本発明に係る半導体装置の製造方法の好適な一実施形態を説明するための模式断面図である。本実施形態に係る半導体装置の製造方法は、
（ａ）主面の一方に複数の回路電極を有する半導体ウエハを準備し、該半導体ウエハの回路電極が設けられている側に、本実施形態に係る接着剤組成物からなる接着剤層を設ける工程と、
（ｂ）半導体ウエハの回路電極が設けられている側とは反対側を研削して半導体ウエハを薄化する工程と、
（ｃ）薄化した半導体ウエハ及び接着剤層をダイシングしてフィルム状接着剤付半導体素子に個片化する工程と、
（ｄ）フィルム状接着剤付半導体素子の回路電極を半導体素子搭載用支持部材の回路電極に接合する工程と、
を備える。 3 to 7 are schematic cross-sectional views for explaining a preferred embodiment of a method for manufacturing a semiconductor device according to the present invention. The manufacturing method of the semiconductor device according to this embodiment is as follows:
(A) A semiconductor wafer having a plurality of circuit electrodes on one main surface is prepared, and an adhesive layer made of the adhesive composition according to the present embodiment is provided on the side of the semiconductor wafer on which the circuit electrodes are provided. Process,
(B) a step of grinding the opposite side of the semiconductor wafer to the side where the circuit electrodes are provided to thin the semiconductor wafer;
(C) a step of dicing the thinned semiconductor wafer and the adhesive layer into individual semiconductor elements with a film adhesive;
(D) bonding the circuit electrode of the semiconductor element with a film adhesive to the circuit electrode of the semiconductor element mounting support member;
Is provided.

本実施形態における（ａ）工程では、上述の接着剤シート１０の接着剤層２を半導体ウエハの回路電極が設けられている側に貼付けることにより、接着剤層が設けられる。また、本実施形態における（ｄ）工程では、加熱によりハンダ接合が行われるとともに、半導体素子と半導体素子搭載用支持部材との間に介在するフィルム状接着剤の硬化も行われる。以下、図面を参照しながら、各工程について説明する。   In the step (a) in this embodiment, the adhesive layer is provided by sticking the adhesive layer 2 of the adhesive sheet 10 to the side of the semiconductor wafer where the circuit electrodes are provided. In the step (d) in the present embodiment, the solder bonding is performed by heating, and the film adhesive interposed between the semiconductor element and the semiconductor element mounting support member is also cured. Hereinafter, each process will be described with reference to the drawings.

（ａ）工程
先ず、接着剤シート１０を所定の装置に配置し、保護フィルム１を剥がす。続いて、主面の一方に複数の回路電極２０を有する半導体ウエハＡを準備し、半導体ウエハＡの回路電極が設けられている側に接着剤層２を貼付け、支持基材３／接着剤層２／半導体ウエハＡが積層された積層体を得る（図３を参照）。回路電極２０には、ハンダ接合用のハンダが塗布されたバンプが設けられていてもよい。なお導体素子搭載用支持部材の回路電極にハンダを設けることもできる。 (A) Process First, the adhesive sheet 10 is arrange | positioned to a predetermined apparatus, and the protective film 1 is peeled off. Subsequently, a semiconductor wafer A having a plurality of circuit electrodes 20 on one of the main surfaces is prepared, the adhesive layer 2 is pasted on the side of the semiconductor wafer A on which the circuit electrodes are provided, and the support substrate 3 / adhesive layer 2 / A laminated body in which the semiconductor wafers A are laminated is obtained (see FIG. 3). The circuit electrode 20 may be provided with bumps coated with solder for soldering. Note that solder can also be provided on the circuit electrode of the conductor element mounting support member.

回路電極２０としては、めっきや蒸着や金属ワイヤを用いて形成される金バンプ、銅バンプ、ニッケルバンプ等が挙げられる。また、樹脂によって形成された導電樹脂バンプや樹脂をコアとし表面に金属を蒸着した樹脂コアバンプでもよい。突出した回路電極は単一の金属で構成されている必要はなく、金、銀、銅、ニッケル、インジウム、パラジウム、スズ、ビスマス等複数の金属成分を含んでいてもよいし、これらの金属層が積層された形をしていてもよい。   Examples of the circuit electrode 20 include gold bumps, copper bumps, and nickel bumps formed using plating, vapor deposition, or metal wires. Further, a conductive resin bump formed of a resin or a resin core bump having a resin as a core and a metal deposited on the surface thereof may be used. The protruding circuit electrode does not need to be composed of a single metal, and may contain a plurality of metal components such as gold, silver, copper, nickel, indium, palladium, tin, and bismuth. May be laminated.

上記（ａ）工程において、支持基材３／接着剤層２／半導体ウエハＡが積層された積層体を得る方法としては、市販のフィルム貼付装置又はラミネータを使用することができる。半導体ウエハＡにボイドの巻き込み無く、接着剤層２を貼り付けるため、貼付装置には加熱機構及び加圧機構が備わっていることが望ましく、真空吸引機構が備わっていることはより望ましい。また、接着剤シート１０の形状は、貼付装置で作業できる形状であればよく、ロール状又はシート状でもよく、半導体ウエハＡの外形に合わせて加工されたものであってもよい。   In the step (a), a commercially available film sticking apparatus or laminator can be used as a method for obtaining a laminate in which the support substrate 3 / adhesive layer 2 / semiconductor wafer A is laminated. In order to attach the adhesive layer 2 to the semiconductor wafer A without involving any voids, it is preferable that the attaching device is provided with a heating mechanism and a pressurizing mechanism, and more preferably a vacuum suction mechanism. Further, the shape of the adhesive sheet 10 may be a shape that can be worked by the sticking device, may be a roll shape or a sheet shape, and may be processed according to the outer shape of the semiconductor wafer A.

半導体ウエハＡと接着剤層２とのラミネートは接着剤層２が軟化する温度で行うことが好ましく、ラミネート温度は、４０〜８０℃が好ましく、５０〜８０℃がより好ましく、６０〜８０℃が更に好ましい。接着剤層２が軟化する温度未満でラミネートする場合、半導体ウエハＡの突出した回路電極２０周辺への埋込不足が発生し、ボイドが巻き込まれた状態となり、ダイシング時の接着剤層の剥離、ピックアップ時の接着剤層の変形、位置合わせ時の認識マーク識別不良、さらにボイドによる接続信頼性の低下が生じ易くなる。   The lamination of the semiconductor wafer A and the adhesive layer 2 is preferably performed at a temperature at which the adhesive layer 2 is softened, and the lamination temperature is preferably 40 to 80 ° C, more preferably 50 to 80 ° C, and 60 to 80 ° C. Further preferred. When laminating at a temperature lower than the temperature at which the adhesive layer 2 is softened, insufficient embedding of the semiconductor wafer A around the protruding circuit electrode 20 occurs, a void is involved, and the adhesive layer is peeled off during dicing. Deformation of the adhesive layer at the time of pickup, recognition mark identification failure at the time of alignment, and further reduction in connection reliability due to voids are likely to occur.

（ｂ）工程
次に、図４に示されるように、半導体ウエハＡの回路電極２０が設けられている側とは反対側をグラインダー４によって研削し、半導体ウエハを薄化する。半導体ウエハの厚みは、例えば、１０〜３００μｍとすることができる。半導体装置の小型化、薄型化の観点から、半導体ウエハの厚みを２０〜１００μｍとすることが好ましい。 (B) Process Next, as shown in FIG. 4, the side opposite to the side where the circuit electrode 20 of the semiconductor wafer A is provided is ground by the grinder 4 to thin the semiconductor wafer. The thickness of the semiconductor wafer can be, for example, 10 to 300 μm. From the viewpoint of miniaturization and thinning of the semiconductor device, the thickness of the semiconductor wafer is preferably 20 to 100 μm.

（ｂ）工程において、半導体ウエハＡの研削は一般的なバックグラインド（Ｂ／Ｇ）装置を用いて行うことができる。Ｂ／Ｇ工程で半導体ウエハＡを厚みムラなく均一に研削するためには、（ａ）工程において接着剤層２をボイドの巻き込みなく均一に貼り付けることが好ましい。   In the step (b), the semiconductor wafer A can be ground using a general back grind (B / G) apparatus. In order to uniformly grind the semiconductor wafer A without thickness unevenness in the B / G step, it is preferable that the adhesive layer 2 is evenly attached in the step (a) without involving voids.

（ｃ）工程
次に、図５（ａ）に示されるように、積層体の半導体ウエハＡにダイシングテープ５を貼付け、これを所定の装置に配置して支持基材３を剥がす。このとき、支持基材３が粘着剤層３ａを備えており、粘着剤層３ａが放射線硬化性である場合には、支持基材３側から放射線を照射することにより、粘着剤層３ａを硬化させ接着剤層２と支持基材３との間の接着力を低下させることができる。ここで、使用される放射線としては、例えば、紫外線、電子線、赤外線等が挙げられる。これにより支持基材３を容易に剥がすことができる。支持基材３の剥離後、図５（ｂ）に示されるように、半導体ウエハＡ及び接着剤層２をダイシングソウ６によりダイシングする。こうして、半導体ウエハＡは複数の半導体素子Ａ’に分割され、接着剤層２は複数のフィルム状接着剤２ａに分割される。 (C) Process Next, as FIG. 5A shows, the dicing tape 5 is affixed on the semiconductor wafer A of a laminated body, this is arrange | positioned to a predetermined apparatus, and the support base material 3 is peeled off. At this time, when the support substrate 3 includes the pressure-sensitive adhesive layer 3a and the pressure-sensitive adhesive layer 3a is radiation curable, the pressure-sensitive adhesive layer 3a is cured by irradiating radiation from the support substrate 3 side. The adhesive force between the adhesive layer 2 and the support base 3 can be reduced. Here, examples of the radiation used include ultraviolet rays, electron beams, and infrared rays. Thereby, the support base material 3 can be easily peeled off. After the support substrate 3 is peeled off, the semiconductor wafer A and the adhesive layer 2 are diced by a dicing saw 6 as shown in FIG. Thus, the semiconductor wafer A is divided into a plurality of semiconductor elements A ′, and the adhesive layer 2 is divided into a plurality of film adhesives 2a.

次に、図６に示されるように、ダイシングテープ５をエキスパンド（拡張）することにより、上記ダイシングにより得られた各半導体素子Ａ’を互いに離間させつつ、ダイシングテープ５側からニードルで突き上げられた半導体素子Ａ’及びフィルム状接着剤２ａからなるフィルム状接着剤付半導体素子１２を吸引コレット７で吸引してピックアップする。フィルム状接着剤付半導体素子１２は、トレー詰めして回収もよく、そのままフリップチップボンダーで回路基板に実装してもよい。   Next, as shown in FIG. 6, the dicing tape 5 was expanded (expanded), and the semiconductor elements A ′ obtained by the dicing were separated from each other and pushed up by the needle from the dicing tape 5 side. The semiconductor element 12 with a film adhesive comprising the semiconductor element A ′ and the film adhesive 2 a is sucked and picked up by the suction collet 7. The film-like adhesive-attached semiconductor element 12 may be collected by tray packing, or may be directly mounted on a circuit board with a flip chip bonder.

（ｃ）工程において、研削された半導体ウエハＡにダイシングテープ５を貼り合わせる作業は、一般的なウエハマウンタを使用して、ダイシングフレームへの固定と同一工程で実施できる。ダイシングテープ５は市販のダイシングテープを適用することができ、ＵＶ硬化型であってもよく、感圧型であってもよい。   In the step (c), the operation of attaching the dicing tape 5 to the ground semiconductor wafer A can be performed in the same step as the fixing to the dicing frame using a general wafer mounter. A commercially available dicing tape can be applied to the dicing tape 5, which may be a UV curable type or a pressure sensitive type.

（ｄ）工程
次に、図７に示されるように、フィルム状接着剤２ａが付着した半導体素子Ａ’の回路電極２０と、半導体素子搭載用支持部材８の回路電極２２とを位置合わせし、フィルム状接着剤付半導体素子１２と半導体素子搭載用支持部材８とを熱圧着する。この熱圧着により、回路電極２０と回路電極２２とが接合し電気的且つ機械的に接続されるとともに、半導体素子Ａ’と半導体素子搭載用支持部材８との間にフィルム状接着剤２ａの硬化物が形成される。 (D) Step Next, as shown in FIG. 7, the circuit electrode 20 of the semiconductor element A ′ to which the film adhesive 2 a is attached and the circuit electrode 22 of the semiconductor element mounting support member 8 are aligned, The semiconductor element with film adhesive 12 and the semiconductor element mounting support member 8 are thermocompression bonded. By this thermocompression bonding, the circuit electrode 20 and the circuit electrode 22 are joined and electrically and mechanically connected, and the film adhesive 2a is cured between the semiconductor element A ′ and the semiconductor element mounting support member 8. Things are formed.

熱圧着時の温度は、はんだ接合の観点から、２００℃以上であることが好ましく、２２０〜２６０℃であることがより好ましい。熱圧着時間は、１〜２０秒間とすることができる。熱圧着の圧力は、０．１〜５ＭＰａとすることができる。   The temperature during thermocompression bonding is preferably 200 ° C. or higher, more preferably 220 to 260 ° C., from the viewpoint of solder bonding. The thermocompression bonding time can be 1 to 20 seconds. The pressure for thermocompression bonding can be 0.1 to 5 MPa.

フリップチップボンダーを用いた回路基板への実装では、半導体チップの回路面に形成されたアライメントマークを半導体チップの回路面に形成された接着剤層２ａを透過して確認し、回路基板への搭載位置を確認して実施することができる。   In mounting on a circuit board using a flip chip bonder, the alignment mark formed on the circuit surface of the semiconductor chip is confirmed through the adhesive layer 2a formed on the circuit surface of the semiconductor chip, and mounted on the circuit board. The position can be confirmed and implemented.

以上の工程を経て、半導体装置３０が得られる。本実施形態に係る接着剤組成物からなるフィルム状接着剤は、埋込性及び硬化後の接着力に優れる。そのため、半導体装置３０は、ボイドの発生が十分抑制され、回路電極同士が良好に接合され、半導体素子Ａ’と半導体素子搭載用支持部材とが十分な接着力で接着された、耐リフロークラック性や接続信頼性に優れたものになり得る。   The semiconductor device 30 is obtained through the above steps. The film adhesive comprising the adhesive composition according to this embodiment is excellent in embedding property and adhesive strength after curing. Therefore, in the semiconductor device 30, the generation of voids is sufficiently suppressed, the circuit electrodes are satisfactorily bonded, and the semiconductor element A ′ and the semiconductor element mounting support member are bonded with sufficient adhesive strength. And can be excellent in connection reliability.

以上、本発明の好適な実施形態について説明したが、本発明は上記実施形態に限定されるものではない。例えば、上記実施形態では回路部材接続用接着剤シートとして説明したが、本発明の接着剤シートは、アンダーフィル形成用接着剤シートであってもよい。   The preferred embodiment of the present invention has been described above, but the present invention is not limited to the above embodiment. For example, although the above embodiment has been described as an adhesive sheet for connecting circuit members, the adhesive sheet of the present invention may be an underfill forming adhesive sheet.

上記実施形態で回路部材接続用接着剤シートとして説明したとおり、本発明の接着剤シートは、圧着時にボイドが発生し難く優れた埋込性を有している。そのため、例えば基板とチップとの接続において本発明の接着剤シートを用いた場合、チップと基板の間隙を十分に充填するアンダーフィルが形成される。このようなアンダーフィルによれば、チップと基板との熱膨張係数差に由来する熱ストレスが分散されるため、熱ストレスに起因する接続信頼性の低下を防止することができる。本発明のアンダーフィル形成用接着剤シートとしては、上述の回路部材接続用接着剤シートの好適な実施形態と同様の形態を採用することができる。   As described in the above embodiment as an adhesive sheet for connecting circuit members, the adhesive sheet of the present invention has excellent embedding properties in which voids hardly occur during pressure bonding. Therefore, for example, when the adhesive sheet of the present invention is used in the connection between the substrate and the chip, an underfill that sufficiently fills the gap between the chip and the substrate is formed. According to such an underfill, the thermal stress derived from the difference in thermal expansion coefficient between the chip and the substrate is dispersed, so that it is possible to prevent a decrease in connection reliability due to the thermal stress. As an adhesive sheet for underfill formation of this invention, the form similar to suitable embodiment of the above-mentioned adhesive sheet for circuit member connection is employable.

以下、実施例及び比較例を挙げて本発明をより具体的に説明する。但し、本発明はこれら実施例に限定されるものではない。   Hereinafter, the present invention will be described more specifically with reference to examples and comparative examples. However, the present invention is not limited to these examples.

（支持基材の準備）
まず、主モノマーとして２−エチルヘキシルアクリレートとメチルメタクリレートを用い、官能基モノマーとしてヒドロキシエチルアクリレートとアクリル酸を用いた溶液重合法によりアクリル共重合体を合成した。得られたアクリル共重合体の重量平均分子量は４０万、ガラス転移点は−３８℃であった。このアクリル共重合体１００質量部に対し、多官能イソシアネート架橋剤（日本ポリウレタン工業株式会社製、商品名「コローネートＨＬ」）１０質量部を配合して粘着剤組成物溶液を調整した。 (Preparation of support substrate)
First, an acrylic copolymer was synthesized by a solution polymerization method using 2-ethylhexyl acrylate and methyl methacrylate as main monomers and hydroxyethyl acrylate and acrylic acid as functional group monomers. The resulting acrylic copolymer had a weight average molecular weight of 400,000 and a glass transition point of -38 ° C. A pressure-sensitive adhesive composition solution was prepared by blending 10 parts by mass of a polyfunctional isocyanate cross-linking agent (trade name “Coronate HL”, manufactured by Nippon Polyurethane Industry Co., Ltd.) with respect to 100 parts by mass of this acrylic copolymer.

得られた粘着剤組成物溶液を、ポリオレフィンフィルム（厚さ：１００μｍ）の上に乾燥時の粘着剤層の厚みが１０μｍになるよう塗布して乾燥した。更に、シリコーン系離型剤で表面処理したニ軸延伸ポリエステルフィルム（帝人デュポン社製、商品名Ａ３１７０、厚さ：２５μｍ）を粘着剤層面にラミネートした。この粘着剤層付き積層体を室温で１週間放置し十分にエージングを行った後、ポリオレフィンフィルムを剥離したものを支持基材として使用した。   The obtained pressure-sensitive adhesive composition solution was applied on a polyolefin film (thickness: 100 μm) so that the thickness of the pressure-sensitive adhesive layer at the time of drying was 10 μm and dried. Furthermore, a biaxially stretched polyester film (Teijin DuPont, trade name: A3170, thickness: 25 μm) surface-treated with a silicone release agent was laminated on the pressure-sensitive adhesive layer surface. The laminate with the pressure-sensitive adhesive layer was allowed to stand at room temperature for 1 week and sufficiently aged, and then the polyolefin film was used as a support substrate.

（実施例１）
＜接着剤組成物の調製＞
「ＺＸ１３５６−２」（東都化成株式会社製商品名、フェノキシ樹脂）２５質量部、「１０３２Ｈ６０」（ジャパンエポキシレジン株式会社製商品名、エポキシ樹脂）２５質量部、「エピコート８２８」（ジャパンエポキシレジン社製商品名、液状エポキシ樹脂）１５質量部及び「ＨＸ３９４１ＨＰ」（旭化成エレクトロニクス株式会社製商品名、マイクロカプセル型潜在性硬化剤）３５質量部を、トルエンと酢酸エチルとの混合溶媒中に溶解した。この溶液に、「ＫＷ−４４２６」（三菱レーヨン株式会社製商品名、コアシェルタイプの有機微粒子）１０質量部、５μｍの分級処理を行った平均粒径１μｍコージェライト粒子（２ＭｇＯ・２Ａｌ２Ｏ３・５ＳｉＯ２、比重２．４、線膨張係数：１．５×１０−６／℃、屈折率：１．５７、）１００質量部、を分散し、接着剤ワニスを得た。 Example 1
<Preparation of adhesive composition>
“ZX1356-2” (trade name, manufactured by Tohto Kasei Co., Ltd., phenoxy resin) 25 parts by mass, “1032H60” (trade name, manufactured by Japan Epoxy Resin Co., Ltd.), 25 parts by mass, “Epicoat 828” (Japan Epoxy Resin Co., Ltd.) Product name, liquid epoxy resin) 15 parts by mass and “HX3941HP” (Asahi Kasei Electronics Co., Ltd., product name, microcapsule type latent curing agent) 35 parts by mass were dissolved in a mixed solvent of toluene and ethyl acetate. To this solution, 10 parts by weight of “KW-4426” (trade name, core-shell type organic fine particles manufactured by Mitsubishi Rayon Co., Ltd.) and an average particle diameter of 1 μm cordierite particles (2MgO · 2Al 2 O 3. 5 SiO 2 , specific gravity 2.4, linear expansion coefficient: 1.5 × 10 −6 / ° C., refractive index: 1.57), and 100 parts by mass were dispersed to obtain an adhesive varnish.

＜回路部材接続用接着剤シートの作製＞
得られた接着剤ワニスを、ポリエチレンテレフタレート（ＰＥＴ）フィルム（帝人デュポンフィルム社製、商品名「ＡH−３」、厚さ：５０μｍ）上にロールコータを用いて塗布し、７０℃のオーブンで１０分間乾燥させて、厚み２５μｍの接着剤層を形成した。次に、接着剤層と上記支持基材における粘着剤層面とを常温で貼り合わせて、回路部材接続用接着剤シートを得た。 <Preparation of adhesive sheet for connecting circuit members>
The obtained adhesive varnish was applied onto a polyethylene terephthalate (PET) film (manufactured by Teijin DuPont Films, trade name “AH-3”, thickness: 50 μm) using a roll coater. It was dried for minutes to form an adhesive layer having a thickness of 25 μm. Next, the adhesive layer and the pressure-sensitive adhesive layer surface of the support substrate were bonded together at room temperature to obtain an adhesive sheet for connecting circuit members.

（実施例２）
接着剤ワニスの調整における「ＫＷ−４４２６」の配合量を２０質量部、コージェライト粒子の配合量を５０質量部とした以外は実施例１と同様にして、回路部材接続用接着剤シートを得た。 (Example 2)
An adhesive sheet for connecting circuit members was obtained in the same manner as in Example 1 except that the amount of “KW-4426” in adjusting the adhesive varnish was 20 parts by mass and the amount of cordierite particles was 50 parts by mass. It was.

（実施例３）
接着剤ワニスの調整における「ＫＷ−４４２６」の配合量を７質量部、コージェライト粒子の配合量を１２５質量部とした以外は実施例１と同様にして、回路部材接続用接着剤シートを得た。 (Example 3)
An adhesive sheet for connecting a circuit member was obtained in the same manner as in Example 1 except that the amount of “KW-4426” in adjusting the adhesive varnish was 7 parts by mass and the amount of cordierite particles was 125 parts by mass. It was.

（実施例４）
接着剤ワニスの調整における「ＫＷ−４４２６」に代えて「ＥＸＬ−２６５５」（ロームアンドハースジャパン株式会社製商品名、コアシェルタイプの有機微粒子）３０質量部を、コージェライト粒子に代えて「ＳＥ２０５０」（アドマテックス株式会社製商品名、平均粒径０．５μｍのシリカフィラー）５０質量部を、それぞれ配合した以外は実施例１と同様にして、回路部材接続用接着剤シートを得た。 (Example 4)
Instead of “KW-4426” in the adjustment of the adhesive varnish, “EXL-2655” (trade name, core-shell type organic fine particles manufactured by Rohm and Haas Japan Co., Ltd.) 30 parts by mass is replaced with “SE2050” instead of cordierite particles. An adhesive sheet for connecting circuit members was obtained in the same manner as in Example 1 except that 50 parts by mass (trade name manufactured by Admatechs Co., Ltd., silica filler having an average particle size of 0.5 μm) were blended.

（実施例５）
接着剤ワニスの調整における「ＫＷ−４４２６」に代えて「ＥＸＬ−２６５５」１５質量部を、コージェライト粒子に代えて「ＳＥ２０５０」５０質量部を、それぞれ配合した以外は実施例１と同様にして、回路部材接続用接着剤シートを得た。 (Example 5)
Except for blending 15 parts by mass of “EXL-2655” instead of “KW-4426” and 50 parts by mass of “SE2050” instead of cordierite particles in the adjustment of the adhesive varnish, the same as in Example 1. Then, an adhesive sheet for connecting circuit members was obtained.

（実施例６）
接着剤ワニスの調整における「ＫＷ−４４２６」に代えて「ＥＸＬ−２６５５」１５質量部を、コージェライト粒子に代えて「ＳＥ２０５０」１５０質量部を、それぞれ配合した以外は実施例１と同様にして、回路部材接続用接着剤シートを得た。 (Example 6)
Except for blending 15 parts by weight of “EXL-2655” instead of “KW-4426” and 150 parts by weight of “SE2050” instead of cordierite particles in the adjustment of the adhesive varnish, the same as in Example 1. Then, an adhesive sheet for connecting circuit members was obtained.

（比較例１）
接着剤ワニスの調整における「ＫＷ−４４２６」を配合しなかった以外は実施例１と同様にして、回路部材接続用接着剤シートを得た。 (Comparative Example 1)
An adhesive sheet for connecting circuit members was obtained in the same manner as in Example 1 except that “KW-4426” in adjusting the adhesive varnish was not blended.

（比較例２）
接着剤ワニスの調整におけるコージェライト粒子を配合しなかった以外は実施例２と同様にして、回路部材接続用接着剤シートを得た。 (Comparative Example 2)
An adhesive sheet for connecting circuit members was obtained in the same manner as in Example 2 except that no cordierite particles were added in the adjustment of the adhesive varnish.

（比較例３）
接着剤ワニスの調整におけるコージェライト粒子を配合せず、「ＫＷ−４４２６」に代えて「ＥＸＬ−２６５５」３５質量部を配合した以外は実施例１と同様にして、回路部材接続用接着剤シートを得た。 (Comparative Example 3)
Adhesive sheet for connecting circuit members in the same manner as in Example 1, except that cordierite particles in the adjustment of the adhesive varnish were not blended, and 35 parts by mass of “EXL-2655” was blended in place of “KW-4426”. Got.

（比較例４）
接着剤ワニスの調整におけるコージェライト粒子と「ＫＷ−４４２６」を配合しなかった以外は実施例１と同様にして、回路部材接続用接着剤シートを得た。 (Comparative Example 4)
An adhesive sheet for connecting circuit members was obtained in the same manner as in Example 1 except that cordierite particles and “KW-4426” in the adjustment of the adhesive varnish were not blended.

［接着剤層の評価］
（線膨張係数測定）
実施例及び比較例で得られた回路部材接続用接着剤シートを１８０℃に設定したオーブンに３時間放置し、加熱硬化処理を行った。加熱硬化後の接着剤層を支持基材から剥離し、３０ｍｍ×２ｍｍの大きさの試験片を作製した。セイコーインスツルメンツ社製「ＴＭＡ／ＳＳ６１００」（商品名）を用い、上記試験片をチャック間２０ｍｍとなるよう装置内に取り付け、測定温度範囲：２０〜３００℃、昇温速度：５℃／分、荷重条件：試験片の断面積に対し０．５ＭＰａ圧力となる条件で、引張り試験モードにて熱機械分析を行い、線膨張係数を測定した。測定後、１００℃と４０℃の線膨張差を求め、温度差で割った値を算出し、これを平均線膨張係数として比較に使用した。 [Evaluation of adhesive layer]
(Measurement of linear expansion coefficient)
The adhesive sheets for connecting circuit members obtained in the examples and comparative examples were left in an oven set at 180 ° C. for 3 hours to perform heat curing treatment. The adhesive layer after heat curing was peeled off from the support substrate to prepare a test piece having a size of 30 mm × 2 mm. Using "TMA / SS6100" (trade name) manufactured by Seiko Instruments Inc., the above test piece is mounted in the apparatus so that the distance between chucks is 20 mm, measurement temperature range: 20 to 300 ° C, temperature increase rate: 5 ° C / min, load Conditions: Thermomechanical analysis was performed in the tensile test mode under the condition that the pressure was 0.5 MPa with respect to the cross-sectional area of the test piece, and the linear expansion coefficient was measured. After the measurement, the linear expansion difference between 100 ° C. and 40 ° C. was obtained, and the value divided by the temperature difference was calculated, and this was used as the average linear expansion coefficient for comparison.

（反応率測定）
実施例及び比較例で得られた回路部材接続用接着剤シートにおける接着剤層をアルミ製測定容器に２〜１０ｍｇ計り取り、パーキンエルマー社製ＤＳＣ（Ｄｉｆｆｅｒｅｎｔｉａｌ Ｓｃａｎｉｎｇ Ｃａｌｏｒｉｍｅｔｅｒ）「Ｐｙｌｉｓ１」（商品名）を用いて、昇温速度２０℃／分で３０〜３００℃まで昇温して発熱量を測定し、これを初期発熱量とした。次いで、熱圧着装置の加熱ヘッドをセパレータに挟んだ熱電対で温度確認を行って１０秒後に２５０℃に達する温度に設定した。この加熱ヘッド設定で、回路部材接続用接着剤シートをセパレータに挟んで２０秒間加熱し、熱圧着時と同等の加熱処理が施された状態の接着剤層を得た。加熱処理後の接着剤層についても同様に発熱量を測定し、これを加熱後の発熱量とした。また、回路部材接続用接着剤シートを室温（２５℃）で１４日間保管した後の接着剤層についても同様に発熱量を測定し、これを保管後の発熱量とした。得られた発熱量から次の式で反応率（％）を算出した。
反応率（％）＝（初期発熱量−加熱後の発熱量又は保管後の発熱量）／（初期発熱量）×１００ (Reaction rate measurement)
2-10 mg of the adhesive layer in the adhesive sheet for connecting circuit members obtained in Examples and Comparative Examples was weighed into an aluminum measuring container, and DSC (Differential Scanning Calorimeter) “Pylis1” (trade name) manufactured by PerkinElmer Co. was used. The heating value was raised to 30 to 300 ° C. at a heating rate of 20 ° C./min, and the calorific value was measured. Next, the temperature was confirmed with a thermocouple that sandwiched the heating head of the thermocompression bonding apparatus, and the temperature reached 250 ° C. after 10 seconds. With this heating head setting, the adhesive sheet for connecting the circuit members was sandwiched between the separators and heated for 20 seconds to obtain an adhesive layer that had been subjected to the same heat treatment as in thermocompression bonding. The heat generation amount of the adhesive layer after the heat treatment was measured in the same manner, and this was used as the heat generation amount after the heating. Further, the calorific value was similarly measured for the adhesive layer after the adhesive sheet for circuit member connection was stored at room temperature (25 ° C.) for 14 days, and this was defined as the calorific value after storage. The reaction rate (%) was calculated from the obtained calorific value by the following formula.
Reaction rate (%) = (initial calorific value−calorific value after heating or calorific value after storage) / (initial calorific value) × 100

＜半導体装置の作製及び評価＞
上記で得られた回路部材接続用接着剤シートを用い、下記の手順にしたがって、半導体装置を作製し、評価した。結果を表１及び表２に示す。 <Fabrication and evaluation of semiconductor devices>
Using the adhesive sheet for circuit member connection obtained above, a semiconductor device was produced and evaluated according to the following procedure. The results are shown in Tables 1 and 2.

（半導体ウエハへの貼付）
ジェイシーエム製のダイアタッチフィルムマウンターの８０℃に加熱された吸着ステー上に、金めっきバンプが形成された半導体ウエハ（６インチ径、厚さ７２５μｍ）をバンプ側を上に向けて載せた。回路部材接続用接着剤シートを２００ｍｍ×２００ｍｍに切断し保護フィルムである第一のフィルムを除いた接着剤層を半導体ウエハのバンプ側に向け、エアを巻き込まないように半導体ウエハの端からダイアタッチマウンターの貼付ローラで押しつけてラミネートした。ラミネート後、ウエハの外形に沿って接着剤のはみ出し部分を切断した。 (Attaching to semiconductor wafer)
A semiconductor wafer (6 inch diameter, thickness 725 μm) on which gold-plated bumps were formed was placed on the suction stay heated to 80 ° C. of a die attach film mounter manufactured by JCMM with the bump side facing up. The adhesive sheet for connecting circuit members is cut to 200 mm × 200 mm and the adhesive layer excluding the first film as the protective film is directed to the bump side of the semiconductor wafer, and die attach from the end of the semiconductor wafer so as not to entrain air. The laminate was pressed with the mounting roller of the mounter. After lamination, the protruding portion of the adhesive was cut along the outer shape of the wafer.

（半導体ウエハ裏面のバックグラインド及び支持基材の剥離）
上記回路部材接続用接着剤シートと半導体ウエハ（厚み６２５μｍ）との積層体を、株式会社ディスコ製バックグラインド装置で、厚みが１５０μｍとなるまで半導体ウエハの裏面をバックグラインドした後、バックグラインドした半導体ウエハを上に向けた状態でジェイシーエム製のダイアタッチフィルムマウンターの吸着ステージに設置し、室温にてダイシングフレームと同時にアデカ製ダイシングテープ「ＡＤ８０Ｈ」を貼り付けた。次いで、支持基材上に日東電工製バックグラインドテープ剥離テープを貼付し、１８０度ピール引き剥がしで支持基材のみを引き剥がした。 (Back grinding of the backside of the semiconductor wafer and peeling of the support substrate)
After the back surface of the semiconductor wafer is back-ground to a thickness of 150 μm with the back grinder manufactured by DISCO Corporation, the laminated body of the circuit sheet connecting adhesive sheet and the semiconductor wafer (thickness: 625 μm), and then back-ground semiconductor The wafer was placed on the suction stage of a die attach film mounter manufactured by JCM Co., Ltd., and Adeka dicing tape “AD80H” was attached at the same time as the dicing frame at room temperature. Next, a back grind tape peeling tape made by Nitto Denko was pasted on the supporting substrate, and only the supporting substrate was peeled off by peeling off 180 degrees.

（ダイシング）
上述のダイシングフレームに固定された接着剤層付き半導体ウエハを株式会社ディスコ製フルオートマチックダイシングソー「ＤＦＤ６３６１」にて１０ｍｍ×１０ｍｍにダイシングした。ダイシング後、洗浄し、水分を飛ばした後、ダイシングテープ側からＵＶ照射を行った後、個片化された接着剤付き半導体チップをピックアップした。 (Dicing)
The semiconductor wafer with the adhesive layer fixed to the above-mentioned dicing frame was diced to 10 mm × 10 mm with a disco-made fully automatic dicing saw “DFD6361”. After dicing, washing, removing moisture, and performing UV irradiation from the dicing tape side, the separated semiconductor chip with adhesive was picked up.

（圧着）
接着剤付き半導体チップを、バンプに対向する位置にＳｎＡｇＣｕを構成成分とするハンダが形成された回路を有するガラエポ基板に、松下電気産業製フリップチップボンダ「ＦＣＢ３」で位置あわせを行った後、２５０℃、０．５ＭＰａで１０秒間熱圧着し、半導体装置を得た。 (Crimping)
After aligning the semiconductor chip with adhesive on a glass epoxy substrate having a circuit in which solder containing SnAgCu as a constituent component is formed at a position facing the bump, using a flip chip bonder “FCB3” manufactured by Matsushita Electric Industrial Co., Ltd., 250 A semiconductor device was obtained by thermocompression bonding at 0 ° C. and 0.5 MPa for 10 seconds.

上述のようにして作製した半導体装置におけるフィルム状接着剤の埋込性及び接続抵抗を評価した。次いで、作製した半導体装置を８５℃、６０％ＲＨの恒温恒湿器に１６８時間放置して吸湿させ、２６０℃に設定したリフロー炉に３回暴露した。暴露後、接続抵抗及び接続部分の界面状態を確認した。   The embedding property and connection resistance of the film adhesive in the semiconductor device manufactured as described above were evaluated. Next, the produced semiconductor device was left to stand in a constant temperature and humidity chamber of 85 ° C. and 60% RH for 168 hours to absorb moisture, and exposed to a reflow furnace set at 260 ° C. three times. After the exposure, the connection resistance and the interface state of the connection part were confirmed.

＜接続抵抗＞
作製した半導体装置について、圧着後の接続抵抗及びリフロー後の接続抵抗を、デジタルマルチメータ（アドバンテスト社製、商品名）を用いて測定し、下記の基準に基づいて評価した。結果を表１及び表２に示す。
ａ：試験に適用した実装ＴＥＧの全端子連結での接続抵抗が得られる。
ｂ：断線不良端子が存在する。 <Connection resistance>
About the produced semiconductor device, the connection resistance after pressure bonding and the connection resistance after reflow were measured using a digital multimeter (manufactured by Advantest Co., Ltd., product name) and evaluated based on the following criteria. The results are shown in Tables 1 and 2.
a: Connection resistance at all terminal connections of the mounting TEG applied to the test is obtained.
b: A disconnection defective terminal exists.

＜圧着後の埋込性＞
接着剤層の貼付状態を日立建機製超音波探傷装置（ＳＡＴ）で視察し、下記の基準に基づいて評価した。結果を表１及び表２に示す。
ａ：剥離、ボイドが観察されない。
ｂ：剥離、ボイドが観察される。 <Embedment after crimping>
The adhesion state of the adhesive layer was observed with an ultrasonic flaw detector (SAT) manufactured by Hitachi Construction Machinery and evaluated based on the following criteria. The results are shown in Tables 1 and 2.
a: Peeling and voids are not observed.
b: Peeling and voids are observed.

＜リフロー後の接続性＞
接着剤層のリフロー後の接続状態を日立建機製超音波探傷装置（ＳＡＴ）で視察し、下記の基準に基づいて評価した。結果を表１及び表２に示す。
ａ：剥離が観察されない。
ｂ：剥離が観察される。 <Connectivity after reflow>
The connection state after reflow of the adhesive layer was observed with an ultrasonic flaw detector (SAT) manufactured by Hitachi Construction Machinery, and evaluated based on the following criteria. The results are shown in Tables 1 and 2.
a: No peeling is observed.
b: Peeling is observed.

Figure 0005569126
Figure 0005569126

Figure 0005569126
Figure 0005569126

表１、表２に示されるように、実施例１〜６で得られた回路部材接続用接着剤シートを用いた場合、接続抵抗に優れ、ボイド発生が無く、リフロー後も良好な接続性を示した。これに対し、比較例１〜４で得られた回路部材接続用接着剤シートを用いた場合、ボイドが発生し、リフロー後にはく離し、接続信頼性に劣ることが確認された。   As shown in Tables 1 and 2, when the circuit sheet connecting adhesive sheets obtained in Examples 1 to 6 were used, the connection resistance was excellent, no voids were generated, and good connectivity was achieved after reflow. Indicated. On the other hand, when the adhesive sheet for connecting a circuit member obtained in Comparative Examples 1 to 4 was used, voids were generated, peeled off after reflow, and it was confirmed that the connection reliability was inferior.

１…保護フィルム、２…接着剤層、３…支持基材、３ａ…粘着剤層、３ｂ…プラスチックフィルム、４…グラインダー、５…ダイシングテープ、６…ダイシングソウ、７…吸引コレット、８…半導体素子搭載用支持部材、１０…回路部材接続用接着剤シート、１１…回路部材接続用接着剤シート、１２…フィルム状接着剤付半導体素子、２０…回路電極、３０…半導体装置、Ａ…半導体ウエハ。   DESCRIPTION OF SYMBOLS 1 ... Protective film, 2 ... Adhesive layer, 3 ... Support base material, 3a ... Adhesive layer, 3b ... Plastic film, 4 ... Grinder, 5 ... Dicing tape, 6 ... Dicing saw, 7 ... Suction collet, 8 ... Semiconductor Support member for mounting elements, 10 ... adhesive sheet for connecting circuit members, 11 ... adhesive sheet for connecting circuit members, 12 ... semiconductor element with film adhesive, 20 ... circuit electrode, 30 ... semiconductor device, A ... semiconductor wafer .

Claims (12)

相対向する回路部材間に介在させ、前記回路部材同士を接着するために用いられる接着剤組成物であって、
（Ａ）重量平均分子量が２万〜８０万の熱可塑性樹脂と、
（Ｂ）エポキシ樹脂と、
（Ｃ）潜在性硬化剤と、
（Ｄ）平均粒径が０．０１〜５μｍの、コージェライト、フォルスライト、ムライト、硫酸バリウム、水酸化マグネシウム、ホウ酸アルミニウム、バリウム、シリカチタニア、シリカ、ケイ酸カルシウム、アルミナ及び炭酸カルシウムからなる群より選択される少なくとも一種を含む無機フィラーと、
（Ｅ）平均粒径が０．１〜２μｍの、アクリル樹脂、シリコーン樹脂、ブタジエンゴム、ポリエステル、ポリウレタン、ポリビニルブチラール、ポリアレート、ポリメチルメタクリレート、アクリルゴム、ポリスチレン、ＮＢＲ、ＳＢＲ及びシリコーン変性樹脂からなる群より選択される少なくとも一種を含む有機微粒子からなる耐衝撃緩和剤と、
を含み、
前記熱可塑性樹脂、前記エポキシ樹脂及び前記潜在性硬化剤の総含有量１００質量部に対して、
前記無機フィラーの含有量が５０〜１５０質量部であり、
前記耐衝撃緩和剤の含有量が５〜３０質量部であり、且つ、
前記無機フィラー及び前記耐衝撃緩和剤の含有量の合計が６５〜１６５質量部である、接着剤組成物。 It is an adhesive composition used for interposing between the circuit members facing each other and bonding the circuit members together,
(A) a thermoplastic resin having a weight average molecular weight of 20,000 to 800,000,
(B) an epoxy resin;
(C) a latent curing agent;
(D) consisting of cordierite, forslite, mullite, barium sulfate, magnesium hydroxide, aluminum borate, barium, silica titania, silica, calcium silicate, alumina and calcium carbonate having an average particle size of 0.01-5 μm An inorganic filler containing at least one selected from the group ;
(E) An acrylic resin, silicone resin, butadiene rubber, polyester, polyurethane, polyvinyl butyral, polyarate, polymethyl methacrylate, acrylic rubber, polystyrene, NBR, SBR, and silicone-modified resin having an average particle size of 0.1 to 2 μm An impact relaxation agent comprising organic fine particles containing at least one selected from the group ;
Including
For a total content of 100 parts by mass of the thermoplastic resin, the epoxy resin and the latent curing agent,
The content of the inorganic filler is 50 to 150 parts by mass,
The content of the anti-shock agent is 5 to 30 parts by mass, and
The adhesive composition whose sum total of content of the said inorganic filler and the said impact-resistant relaxation agent is 65-165 mass parts. 前記熱可塑性樹脂が、ポリイミド樹脂又はフェノキシ樹脂である、請求項１に記載の接着剤組成物。   The adhesive composition according to claim 1, wherein the thermoplastic resin is a polyimide resin or a phenoxy resin. 前記熱可塑性樹脂の含有量が、前記熱可塑性樹脂、前記エポキシ樹脂及び前記潜在性硬化剤の総含有量１００質量部に対して、１０〜５０質量部である、請求項１又は２に記載の接着剤組成物。   The content of the thermoplastic resin is 10 to 50 parts by mass with respect to 100 parts by mass of the total content of the thermoplastic resin, the epoxy resin, and the latent curing agent. Adhesive composition. 前記エポキシ樹脂の含有量が、前記熱可塑性樹脂、前記エポキシ樹脂及び前記潜在性硬化剤の総含有量１００質量部に対して５〜８８質量部である、請求項１〜３のいずれか一項に記載の接着剤組成物。   The content of the epoxy resin is 5 to 88 parts by mass with respect to 100 parts by mass of the total content of the thermoplastic resin, the epoxy resin, and the latent curing agent. The adhesive composition described in 1. 前記潜在性硬化剤が、フェノール系、イミダゾール系、ヒドラジド系、チオール系、ベンゾオキサジン、三フッ化ホウ素−アミン錯体、スルホニウム塩、アミンイミド、ポリアミンの塩、ジシアンジアミド及び有機過酸化物系の硬化剤から選択される、請求項１〜４のいずれか一項に記載の接着剤組成物。   The latent curing agent is selected from phenol, imidazole, hydrazide, thiol, benzoxazine, boron trifluoride-amine complex, sulfonium salt, amine imide, polyamine salt, dicyandiamide and organic peroxide curing agent. The adhesive composition according to any one of claims 1 to 4, which is selected. 前記潜在性硬化剤が、マイクロカプセル型潜在性硬化剤である、請求項１〜５のいずれか一項に記載の接着剤組成物。   The adhesive composition according to any one of claims 1 to 5, wherein the latent curing agent is a microcapsule type latent curing agent. 前記潜在性硬化剤の含有量が、前記熱可塑性樹脂、前記エポキシ樹脂及び前記潜在性硬化剤の総含有量１００質量部に対して２〜４５質量部である、請求項１〜６のいずれか一項に記載の接着剤組成物。   The content of the latent curing agent is 2 to 45 parts by mass with respect to 100 parts by mass of the total content of the thermoplastic resin, the epoxy resin, and the latent curing agent. The adhesive composition according to one item. 前記有機微粒子が、コアシェル型の有機微粒子である、請求項１〜７のいずれか一項に記載の接着剤組成物。 The adhesive composition according to any one of claims 1 to 7 , wherein the organic fine particles are core-shell type organic fine particles. 支持基材と、該支持基材上に設けられ、請求項１〜８のいずれか一項に記載の接着剤組成物からなる接着剤層と、を備える、接着剤シート。 An adhesive sheet comprising: a support base material; and an adhesive layer provided on the support base material and made of the adhesive composition according to any one of claims 1 to 8 . 前記支持基材が、プラスチックフィルムと該プラスチックフィルム上に設けられた粘着剤層とを備え、前記接着剤層が前記粘着剤層上に設けられている、請求項９に記載の接着剤シート。 The adhesive sheet according to claim 9 , wherein the support substrate includes a plastic film and a pressure-sensitive adhesive layer provided on the plastic film, and the adhesive layer is provided on the pressure-sensitive adhesive layer. 前記接着剤層を相対向する回路部材間に介在させ、前記回路部材同士を接着するために用いられる、請求項９又は１０に記載の接着剤シート。 The adhesive sheet according to claim 9 or 10 , wherein the adhesive layer is interposed between circuit members facing each other and used to bond the circuit members together. 主面の一方に複数の回路電極を有する半導体ウエハを準備し、該半導体ウエハの前記回路電極が設けられている側に、請求項１〜８のいずれか一項に記載の接着剤組成物からなる接着剤層を設ける工程と、
前記半導体ウエハの前記回路電極が設けられている側とは反対側を研削して前記半導体ウエハを薄化する工程と、
前記薄化した半導体ウエハ及び前記接着剤層をダイシングしてフィルム状接着剤付半導体素子に個片化する工程と、
前記フィルム状接着剤付半導体素子の前記回路電極を半導体素子搭載用支持部材の回路電極に接合する工程と、
を備える、半導体装置の製造方法。 A semiconductor wafer having a plurality of circuit electrodes on one of the main surfaces is prepared, and the adhesive composition according to any one of claims 1 to 8 is provided on the side of the semiconductor wafer on which the circuit electrodes are provided. Providing an adhesive layer comprising:
Grinding the opposite side of the semiconductor wafer from the side where the circuit electrodes are provided to thin the semiconductor wafer;
Dicing the thinned semiconductor wafer and the adhesive layer into individual semiconductor elements with a film adhesive; and
Bonding the circuit electrode of the semiconductor element with a film adhesive to the circuit electrode of the semiconductor element mounting support member;
A method for manufacturing a semiconductor device.
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