JP5542627B2 - Connection plate, junction structure, and semiconductor device - Google Patents

Connection plate, junction structure, and semiconductor device Download PDF

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JP5542627B2
JP5542627B2 JP2010252938A JP2010252938A JP5542627B2 JP 5542627 B2 JP5542627 B2 JP 5542627B2 JP 2010252938 A JP2010252938 A JP 2010252938A JP 2010252938 A JP2010252938 A JP 2010252938A JP 5542627 B2 JP5542627 B2 JP 5542627B2
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lead
connection plate
plate
solder
semiconductor chip
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JP2012104708A (en
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亮兄 鈴木
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Shindengen Electric Manufacturing Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/3701—Shape
    • H01L2224/37011—Shape comprising apertures or cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/4005—Shape
    • H01L2224/4009—Loop shape
    • H01L2224/40091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/8434—Bonding interfaces of the connector
    • H01L2224/84345—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
    • H01L2224/84801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Description

この発明は、接続板、接合構造及び半導体装置に関する。   The present invention relates to a connection plate, a bonding structure, and a semiconductor device.

従来の半導体装置には、例えば特許文献１のように、半導体チップとリードとを導電性の板材からなる接続板によって電気接続したものがある。この種の半導体装置では、接続板の両端部と半導体チップ及びリードとをはんだにより接合している。なお、接続板と半導体チップ及びリードとの接合は、例えば、スクリーン印刷等によりはんだ（はんだペースト）を半導体チップやリードに塗布した上で接続板の両端部を半導体チップ上及びリード上に配置した後、リフローによりはんだを溶融することで行われる。
また、この種の半導体装置では、半導体チップや接続板の全体、及び、接続板を接合したリードの一端（インナーリード）をモールド樹脂内に埋設し、リードの他端（アウターリード）をモールド樹脂の外側に位置させることが多い。 As a conventional semiconductor device, for example, as disclosed in Patent Document 1, a semiconductor chip and a lead are electrically connected by a connection plate made of a conductive plate material. In this type of semiconductor device, both ends of the connection plate are joined to the semiconductor chip and leads by solder. The connection plate, the semiconductor chip and the lead are joined by, for example, applying solder (solder paste) to the semiconductor chip or the lead by screen printing or the like, and arranging both ends of the connection plate on the semiconductor chip and the lead. Thereafter, the solder is melted by reflow.
In this type of semiconductor device, the entire semiconductor chip and connection plate, and one end (inner lead) of the lead joined to the connection plate are embedded in the mold resin, and the other end (outer lead) of the lead is molded resin. Often located outside of.

特開２００５−２７７２３１号公報Japanese Patent Laying-Open No. 2005-277231

しかしながら、接続板とリードとをはんだで接合する際には、余分なはんだがリード上で濡れ広がってしまう、という問題がある。特に、近年では、モールド樹脂の外側に位置するリードの他端を鉛フリーとすることが必要とされているため、余分なはんだがリードの他端にまで濡れ広がった場合、半導体装置の品質問題となってしまう。
一方、余分なはんだが濡れ広がらないように、接続板とリードの一端とを接合するはんだの量を減らすと、接続板とリードとの接合が不十分（接続点オープン）となってはんだとリードとの電気接続が不良となり、半導体装置の品質問題が生じる。
また、接続板とリードとの接合面積は、接続板と半導体チップとの接合面積と比較して小さくなることが多く、この場合、前述したリフロー時に半導体チップの位置がずれてしまうと、接続板も半導体チップと共に移動してしまう。その結果として、接続板とリードとの接合を確保できなくなり、半導体装置の品質問題が生じる。 However, when the connection plate and the lead are joined by solder, there is a problem that excess solder wets and spreads on the lead. In particular, in recent years, it is necessary to make the other end of the lead located outside the mold resin lead-free, so if excess solder wets and spreads to the other end of the lead, the quality problem of the semiconductor device End up.
On the other hand, if the amount of solder that joins the connection plate and one end of the lead is reduced to prevent excess solder from getting wet and spreading, the connection between the connection plate and the lead will be insufficient (connection point open), and the solder and lead As a result, the electrical connection with the semiconductor device becomes poor, resulting in a quality problem of the semiconductor device.
In addition, the bonding area between the connection plate and the lead is often smaller than the bonding area between the connection plate and the semiconductor chip. In this case, if the position of the semiconductor chip is displaced during the reflow described above, Will also move with the semiconductor chip. As a result, it becomes impossible to ensure the connection between the connection plate and the lead, which causes a quality problem of the semiconductor device.

本発明は、上述した事情に鑑みたものであって、良好な品質の半導体装置、この製造に用いる接続板、及び、接続板とリードとの接合構造を提供することを目的とする。   The present invention has been made in view of the above-described circumstances, and an object of the present invention is to provide a semiconductor device of good quality, a connection plate used for manufacturing the same, and a connection structure between the connection plate and a lead.

この課題を解決するために、本発明の接続板は、互いに間隔をあけて配された半導体チップ及び導電性を有する板状のリードに両端部を接合することにより、これら半導体チップとリードとを電気接続する接続板であって、前記リードの上面に配される平板状の一端部には、前記リードの上面に対向する前記一端部の下面から窪む凹部が形成され、前記凹部が、前記接続板の板厚方向に貫通し、前記凹部は、前記一端部の下面側から上面側に向かうにしたがって大きくなるように設定されていることを特徴とする。 In order to solve this problem, the connecting plate according to the present invention has a semiconductor chip and a lead connected to each other by joining both ends to a semiconductor chip and a conductive plate-like lead that are spaced apart from each other. A connecting plate for electrical connection, and a flat end disposed on the upper surface of the lead is formed with a recess recessed from the lower surface of the one end facing the upper surface of the lead , It penetrates in the plate | board thickness direction of the said connection board, and the said recessed part is set so that it may become large as it goes to the upper surface side from the lower surface side of the said one end part .

また、本発明の接続構造は、前記接続板と、導電性を有する板状のリードとがはんだによって接合されていることを特徴とする。   Moreover, the connection structure of the present invention is characterized in that the connection plate and a conductive plate-like lead are joined by solder.

さらに、本発明の半導体装置は、前記接続板を用いて製造されるものであって、前記接続板の両端部が、はんだによって、互いに間隔をあけて配された半導体チップと導電性を有する板状のリードとに接合されていることを特徴とする。   Furthermore, the semiconductor device of the present invention is manufactured using the connection plate, and both ends of the connection plate are electrically connected to the semiconductor chip arranged at intervals from each other by solder. It is characterized by being bonded to a lead having a shape.

本発明では、リードとの接合箇所となる接続板の一端部に凹部が形成されていることで、一端部に対するはんだの濡れ面積が増加するため、はんだの量を減らさなくても、リードにおけるはんだの濡れ広がりを抑えることができる。また、接続板とリードとの接合に要するはんだの量を十分に確保することができる。
さらに、接続板の一端部に対するはんだの濡れ面積が増加することで、一端部とリードとの接合面積が大きくなるため、接続板の他端部と半導体チップとの接合面積に対する一端部とリードとの接合面積の差を小さく設定できる。したがって、接続板の両端部を半導体チップ及びリードに接合するためにリフローを実施した際に、半導体チップの位置ずれが生じたとしても、接続板が半導体チップと共に移動することを抑制して、接続板とリードとの接合を確保することができる。
また、リフローの際に溶融したはんだの表面張力により、はんだを接続板の一端部の下面側から上面まで濡れ広がらせて、一端部をはんだに係合させることができる。すなわち、接続板をリードに対してより強固に固定することができる。 In the present invention, since the concave portion is formed at one end of the connecting plate that is a joint portion with the lead, the wetted area of the solder with respect to the one end increases, so the solder in the lead can be reduced without reducing the amount of solder. The spread of wetting can be suppressed. In addition, a sufficient amount of solder for joining the connection plate and the leads can be ensured.
Further, since the solder wetted area with respect to one end of the connecting plate increases, the bonding area between the one end and the lead increases, so that the one end and the lead with respect to the bonding area between the other end of the connecting plate and the semiconductor chip The difference in bonding area can be set small. Therefore, when reflow is performed to join both ends of the connection plate to the semiconductor chip and leads, even if the semiconductor chip is displaced, the connection plate is restrained from moving together with the semiconductor chip. Bonding between the plate and the lead can be ensured.
Moreover, the solder can be wetted and spread from the lower surface side to the upper surface of one end portion of the connection plate by the surface tension of the solder melted at the time of reflow, and the one end portion can be engaged with the solder. That is, the connection plate can be more firmly fixed to the lead.

そして、前記接続板において、前記一端部に対して折り曲げられることで前記リードの上面に立設される平板状の立設板部が形成される場合には、前記凹部が、前記一端部の下面からこれに連なる前記立設板部の下面まで延びていることがより好ましい。   In the connection plate, when a flat plate-like standing plate portion standing on the upper surface of the lead is formed by being bent with respect to the one end portion, the concave portion is a lower surface of the one end portion. It is more preferable that it extends to the lower surface of the upright plate portion connected to this.

この構成では、リフローを実施した際に、溶融したはんだを、毛細管現象等によって一端部から立設板部まで凹部の延在方向に濡れ広がらせることができる。
このように接続板がリードに接合された状態では、立設板部がその下面側からはんだによって支持されているため、平板状の一端部がリードの上面に沿って立設板部側に移動することを確実に防止することが可能となる。すなわち、接続板をリードに対してより強固に固定することができる。 In this configuration, when carrying out the reflow, the solder melted, Ru can be wet and spread from one end in the extending direction of the concave portion to the upright plate portion by a capillary phenomenon or the like.
When the connecting plate is joined to the lead in this way, the standing plate portion is supported by the solder from the lower surface side, so that one end of the flat plate moves to the standing plate portion side along the upper surface of the lead. It is possible to reliably prevent this. That is, the connection plate can be more firmly fixed to the lead.

なお、前記接続板においては、前記凹部が、平面視で丸みを帯びた形状に形成されていてもよいし、平面視で多角形状に形成されていてもよい。
また、前記接続板においては、前記一端部の側面に開口していてもよい。
さらに、前記接続板においては、前記凹部が複数形成されていてもよい。 In the connection plate, the concave portion may be formed in a rounded shape in a plan view, or may be formed in a polygonal shape in a plan view.
Moreover, in the said connection board, you may open to the side surface of the said one end part.
Furthermore, a plurality of the recesses may be formed in the connection plate.

そして、前記接続構造においては、前記一端部が配置される前記リードの一端の上面が、当該リードの他端の上面よりも低く位置することがより好ましい。
この構成では、リフロー時に溶融したはんだがリードの一端から他端側に流出することをより確実に防止することができる。 And in the said connection structure, it is more preferable that the upper surface of the end of the said lead where the said one end part is arrange | positioned is located lower than the upper surface of the other end of the said lead.
With this configuration, it is possible to more reliably prevent solder melted during reflow from flowing out from one end of the lead to the other end side.

本発明によれば、接続板とリードとを確実に電気接続することができ、品質の良好な半導体装置を提供することが可能となる。   According to the present invention, the connection plate and the lead can be reliably electrically connected, and a semiconductor device with good quality can be provided.

本発明の第一実施形態に係る半導体装置を示す概略平面図である。1 is a schematic plan view showing a semiconductor device according to a first embodiment of the present invention. 図１の半導体装置を示す概略断面図である。It is a schematic sectional drawing which shows the semiconductor device of FIG. 図１，２の半導体装置を構成する接続板の要部を示す拡大斜視図である。It is an expansion perspective view which shows the principal part of the connection board which comprises the semiconductor device of FIG. 図１，２の半導体装置において、リードと接続板とを接合した接合構造を示す拡大断面図である。3 is an enlarged cross-sectional view showing a joint structure in which leads and a connection plate are joined in the semiconductor device of FIGS. 第一実施形態の半導体装置を構成する接続板の変形例の要部を示す拡大斜視図である。It is an expansion perspective view which shows the principal part of the modification of the connection board which comprises the semiconductor device of 1st embodiment. 第一実施形態の半導体装置を構成する接続板の変形例の要部を示す拡大斜視図である。It is an expansion perspective view which shows the principal part of the modification of the connection board which comprises the semiconductor device of 1st embodiment. 第一実施形態の半導体装置を構成する接続板の変形例の要部を示す拡大斜視図である。It is an expansion perspective view which shows the principal part of the modification of the connection board which comprises the semiconductor device of 1st embodiment. 本発明の第二実施形態に係る半導体装置を構成する接続板の要部を示す拡大斜視図である。It is an expansion perspective view which shows the principal part of the connection board which comprises the semiconductor device which concerns on 2nd embodiment of this invention. 図８の接続板とリードとを接合した接合構造を示す拡大断面図である。It is an expanded sectional view which shows the joining structure which joined the connection board and lead | read | reed of FIG. 本発明の第三実施形態に係る半導体装置を構成する接続板とリードとを接合した接合構造を示す拡大断面図である。It is an expanded sectional view which shows the junction structure which joined the connection board and lead which comprise the semiconductor device which concerns on 3rd embodiment of this invention. 図１０の接続板に形成される凹部形状の例を示す拡大斜視図である。It is an expansion perspective view which shows the example of the recessed part shape formed in the connection board of FIG. 第三実施形態の半導体装置を構成する接続板の変形例を示す拡大断面図である。It is an expanded sectional view showing the modification of the connection board which constitutes the semiconductor device of a third embodiment.

〔第一実施形態〕
以下、図１〜４を参照して本発明の第一実施形態について説明する。
図１，２に示すように、この実施形態に係る半導体装置１は、導電性を有する板材からなる二つのリード２，３と、各リード２，３の一端２１，３１（以下、インナーリード２１，３１とも呼ぶ。）に電気接続される半導体チップ４と、第一リード２の一端２１及び半導体チップ４に接合して第一リード２と半導体チップ４とを電気接続する接続板５と、各リード２，３の一端２１，３１、半導体チップ４及び接続板５を封止するモールド樹脂６とを備えている。この構成では、各リード２，３の他端２２，３２（以下、アウターリード２２，３２とも呼ぶ。）が、半導体チップ４を外部に接続するための端子として機能する。
本実施形態の半導体チップ４は、平面視矩形の板状に形成され、例えばダイオードやトランジスタ等のように上面及び下面に電極を形成して構成されている。 [First embodiment]
Hereinafter, a first embodiment of the present invention will be described with reference to FIGS.
As shown in FIGS. 1 and 2, the semiconductor device 1 according to this embodiment includes two leads 2 and 3 made of a conductive plate material, and one ends 21 and 31 of the leads 2 and 3 (hereinafter, inner leads 21). , 31.), A semiconductor chip 4 electrically connected to the semiconductor chip 4, one end 21 of the first lead 2, and a connecting plate 5 that is joined to the semiconductor chip 4 to electrically connect the first lead 2 and the semiconductor chip 4, One end 21, 31 of the lead 2, 3, the semiconductor chip 4, and the molding resin 6 that seals the connection plate 5 are provided. In this configuration, the other ends 22 and 32 of the leads 2 and 3 (hereinafter also referred to as outer leads 22 and 32) function as terminals for connecting the semiconductor chip 4 to the outside.
The semiconductor chip 4 of the present embodiment is formed in a rectangular plate shape in plan view, and is configured by forming electrodes on the upper surface and the lower surface, such as a diode or a transistor.

※リードの説明
二つのリード２，３は、それぞれ導電性を有する板状に形成され、互いに間隔をあけて配されている。
第一リード２の一端２１（第一インナーリード２１）の上面２１ａは、はんだ７によって接続板５の一端部５１を接合する面をなし（図４参照）、接続板５よりも幅広に形成されている。一方、第二リード３の一端３１（第二インナーリード３１）の上面３１ａは、はんだによって半導体チップ４を接合する面をなし、半導体チップ４の接合領域は半導体チップ４と同様の平面視矩形に形成されている。そして、各リード２，３には、その一端２１，３１の上面２１ａ，３１ａが他端２２，３２の上面２２ａ，３２ａよりも低く位置するように、段差部２３，３３が形成されている。この段差部２３，３３は、モールド樹脂６内に位置している。 * Explanation of Leads The two leads 2 and 3 are each formed into a conductive plate shape and are spaced apart from each other.
An upper surface 21a of one end 21 (first inner lead 21) of the first lead 2 forms a surface for joining one end 51 of the connection plate 5 with the solder 7 (see FIG. 4), and is formed wider than the connection plate 5. ing. On the other hand, the upper surface 31 a of the one end 31 (second inner lead 31) of the second lead 3 forms a surface for joining the semiconductor chip 4 with solder, and the joining region of the semiconductor chip 4 is rectangular in plan view similar to the semiconductor chip 4. Is formed. The leads 2 and 3 are formed with step portions 23 and 33 so that the upper surfaces 21 a and 31 a of the one ends 21 and 31 are positioned lower than the upper surfaces 22 a and 32 a of the other ends 22 and 32. The step portions 23 and 33 are located in the mold resin 6.

なお、図示例において、モールド樹脂６の側部から突出する各リード２，３のアウターリード２２，３２は、モールド樹脂６の外面に沿うように屈曲されているが、これに限ることは無く、半導体装置１を搭載する態様に応じて任意の形状に形成されていればよい。
また、図示例では、二つのインナーリード２１，３１の上面２１ａ，３１ａが同じ高さに位置し、第一インナーリード２１の上面２１ａが第二リード３上に配された半導体チップ４の上面よりも低く位置しているが、これに限ることは無く、例えば第一インナーリード２１の上面２１ａと半導体チップ４の上面とが同じ高さに位置するように二つのリード２，３の相対的な高さ位置を適宜設定してもよい。 In the illustrated example, the outer leads 22 and 32 of the leads 2 and 3 protruding from the side of the mold resin 6 are bent along the outer surface of the mold resin 6, but the present invention is not limited thereto. What is necessary is just to be formed in arbitrary shapes according to the aspect which mounts the semiconductor device 1. FIG.
In the illustrated example, the upper surfaces 21 a and 31 a of the two inner leads 21 and 31 are positioned at the same height, and the upper surface 21 a of the first inner lead 21 is from the upper surface of the semiconductor chip 4 disposed on the second lead 3. However, the present invention is not limited to this. For example, the relative relationship between the two leads 2 and 3 is set such that the upper surface 21a of the first inner lead 21 and the upper surface of the semiconductor chip 4 are positioned at the same height. You may set a height position suitably.

接続板５は、第一リード２及び半導体チップ４の配列方向に延びる板状に形成され、第一インナーリード２１の上面２１ａに配される平板状の一端部５１と、半導体チップ４の上面に配される平板状の他端部５２と、一端部５１及び他端部５２を相互に連結する連結部５３とを備えている。これら一端部５１、連結部５３及び他端部５２は、接続板５の長手方向に順番に並んでいる。
なお、接続板５の他端部５２は、一端部５１や連結部５３よりも幅広に形成されている。また、連結部５３は、断面矩形状に折り曲げられて形成されており、一端部５１に対して折り曲げられることで第一インナーリード２１の上面２１ａに立設される立設板部５４を有している。 The connection plate 5 is formed in a plate shape extending in the arrangement direction of the first lead 2 and the semiconductor chip 4, and has a flat plate-like one end portion 51 disposed on the upper surface 21 a of the first inner lead 21 and the upper surface of the semiconductor chip 4. A flat plate-like other end portion 52, and one end portion 51 and a connecting portion 53 that connects the other end portion 52 to each other are provided. The one end portion 51, the connecting portion 53, and the other end portion 52 are arranged in order in the longitudinal direction of the connection plate 5.
The other end portion 52 of the connection plate 5 is formed wider than the one end portion 51 and the connecting portion 53. The connecting portion 53 is formed by being bent into a rectangular cross section, and has a standing plate portion 54 that is erected on the upper surface 21 a of the first inner lead 21 by being bent with respect to the one end portion 51. ing.

そして、接続板５の一端部５１には、図３，４に示すように、その下面５１ｂから上面５１ａまで板厚方向に貫通すると共に一端部５１の側面５１ｃに開口する凹部５５が形成されている。
本実施形態の凹部５５は、平面視で丸みを帯びた形状に形成されている。なお、図示例では、凹部５５の内側面が窪むように湾曲しているが、例えば内側面が凹部５５内の空間側に膨出するように湾曲していてもよい。
また、図示例では、凹部５５が接続板５の長手方向に交差する一端部５１の側面５１ｃに開口しているが、例えば、接続板５の長手方向に沿う一端部５１の側面５１ｄに開口してもよい。 As shown in FIGS. 3 and 4, a concave portion 55 that penetrates from the lower surface 51 b to the upper surface 51 a in the thickness direction and opens to the side surface 51 c of the one end portion 51 is formed in the one end portion 51 of the connection plate 5. Yes.
The recessed part 55 of this embodiment is formed in the rounded shape by planar view. In the illustrated example, the inner surface of the recess 55 is curved so as to be recessed. However, the inner surface may be curved so as to bulge toward the space in the recess 55, for example.
In the illustrated example, the recess 55 opens on the side surface 51c of the one end 51 that intersects the longitudinal direction of the connection plate 5. However, for example, the recess 55 opens on the side 51d of the one end 51 along the longitudinal direction of the connection plate 5. May be.

以上のように形成された接続板５の両端部（一端部５１及び他端部５２）を第一リード２及び半導体チップ４に接合する場合には、従来と同様に、ペースト状のはんだ７を半導体チップ４及び第一インナーリード２１の上面２１ａに塗布した上で、接続板５の一端部５１及び他端部５２を第一リード２上及び半導体チップ４上にそれぞれ配置し、その後、リフローによりはんだ７を溶融すればよい。
このリフローの際には、図４に示すように、第一インナーリード２１上で溶融したはんだ７が、接続板５の一端部５１の下面５１ｂや側面５１ｃ，５１ｄに加え、凹部５５の内側面にも濡れ広がることになる。そして、このように濡れ広がったはんだ７が凝固することで、第一リード２や半導体チップ４と接続板５とを接合した接合構造が得られる。 When joining the both ends (one end 51 and the other end 52) of the connection plate 5 formed as described above to the first lead 2 and the semiconductor chip 4, the paste-like solder 7 is used as in the conventional case. After applying to the upper surface 21a of the semiconductor chip 4 and the first inner lead 21, the one end 51 and the other end 52 of the connection plate 5 are arranged on the first lead 2 and the semiconductor chip 4, respectively, and then by reflow The solder 7 may be melted.
At the time of this reflow, as shown in FIG. 4, the solder 7 melted on the first inner lead 21 is added to the inner surface of the recess 55 in addition to the lower surface 51 b and the side surfaces 51 c and 51 d of the one end 51 of the connection plate 5. Will spread even wet. Then, the solder 7 that has spread in this way is solidified to obtain a joint structure in which the first lead 2 or the semiconductor chip 4 and the connection plate 5 are joined.

なお、本実施形態の半導体装置１を製造する際には、前述した第一リード２及び半導体チップ４に対する接続板５の接合と同時に、第二リード３に対する半導体チップ４の接合も実施される。すなわち、接続板５を第一リード２上及び半導体チップ４上に配置する前に、ペースト状のはんだを第二インナーリード３１の上面３１ａに塗布し、さらに、半導体チップ４を第二インナーリード３１上に配置しておく。そして、接続板５を第一リード２上及び半導体チップ４上に配置した後に、前述したリフローにより第二リード３と半導体チップ４との間のはんだを溶融・凝固させることで、半導体チップ４が第二リード３に接合される。   When manufacturing the semiconductor device 1 of this embodiment, the bonding of the semiconductor chip 4 to the second lead 3 is also performed simultaneously with the bonding of the connection plate 5 to the first lead 2 and the semiconductor chip 4 described above. That is, before placing the connecting plate 5 on the first lead 2 and the semiconductor chip 4, paste-like solder is applied to the upper surface 31 a of the second inner lead 31, and the semiconductor chip 4 is further attached to the second inner lead 31. Place it on top. And after arrange | positioning the connection board 5 on the 1st lead 2 and the semiconductor chip 4, the semiconductor chip 4 is made to melt | dissolve and solidify the solder between the 2nd lead 3 and the semiconductor chip 4 by the reflow mentioned above. Bonded to the second lead 3.

以上説明したように、本実施形態の接続板５、これを備える接続構造及び半導体装置１によれば、接続板５の一端部５１に凹部５５が形成されていることで、一端部５１に対するはんだ７の濡れ面積が増加しているため、はんだ７の量を減らさなくても、リフローの際に溶融したはんだ７が第一インナーリード２１の上面２１ａで濡れ広がることを抑制できる。また、接続板５と第一リード２との接合に要するはんだ７の量を十分に確保することができる。
なお、本実施形態では、凹部５５が第一リード２の他端２２側に向く一端部５１の側面５１ｃに開口していることで、リフローの際に溶融したはんだ７が、その表面張力によって第一リード２の他端２２側から一端２１側に向かう方向に移動しやすくなるため、はんだ７が第一リード２の他端２２側に濡れ広がること特に抑制することができる。 As described above, according to the connection plate 5, the connection structure including the connection plate 5, and the semiconductor device 1 according to the present embodiment, the recess 55 is formed in the one end 51 of the connection plate 5. 7 is increased, it is possible to prevent the solder 7 melted during reflow from spreading on the upper surface 21 a of the first inner lead 21 without reducing the amount of the solder 7. Further, a sufficient amount of solder 7 required for joining the connection plate 5 and the first lead 2 can be ensured.
In the present embodiment, the concave portion 55 is opened on the side surface 51c of the one end portion 51 facing the other end 22 side of the first lead 2, so that the solder 7 melted at the time of reflow is subjected to the first tension by the surface tension. Since it becomes easy to move in the direction from the other end 22 side of one lead 2 toward the one end 21 side, it is possible to particularly suppress the solder 7 from spreading to the other end 22 side of the first lead 2.

さらに、接続板５の一端部５１に対するはんだ７の濡れ面積が増加することで、一端部５１と第一リード２との接合面積が大きくなるため、接続板５の他端部５２と半導体チップ４との接合面積に対する一端部５１と第一リード２との接合面積の差を小さく設定できる。したがって、二つのリード２，３、半導体チップ４及び接続板５を相互に接合するためにリフローを実施した際に、第二リード３上において半導体チップ４の位置ずれが生じたとしても、接続板５が半導体チップ４と共に移動することを抑制し、接続板５と第一リード２との接合を確保することができる。
以上のことから、接続板５と第一リード２とを確実に電気接続することができ、品質の良好な半導体装置１を提供することが可能となる。 Furthermore, since the wetting area of the solder 7 with respect to the one end portion 51 of the connection plate 5 increases, the bonding area between the one end portion 51 and the first lead 2 increases, and thus the other end portion 52 of the connection plate 5 and the semiconductor chip 4. The difference in the bonding area between the one end 51 and the first lead 2 with respect to the bonding area can be set small. Therefore, even if the semiconductor chip 4 is misaligned on the second lead 3 when reflow is performed to join the two leads 2 and 3, the semiconductor chip 4 and the connection plate 5 to each other, the connection plate 5 can be prevented from moving together with the semiconductor chip 4, and the connection between the connection plate 5 and the first lead 2 can be secured.
From the above, the connection plate 5 and the first lead 2 can be reliably electrically connected, and the semiconductor device 1 with good quality can be provided.

また、本実施形態の接続構造では、各リード２，３のインナーリード２１，３１の上面２１ａ，３１ａがアウターリード２２，３２の上面２２ａ，３２ａよりも低く位置しているため、リフロー時に溶融したはんだ７がインナーリード２１，３１の上面２１ａ，３１ａ上に濡れ広がったとしても、アウターリード２２，３２側に流出することを確実に防止することができる。
なお、本実施形態では、凹部５５が一端部５１の板厚方向に貫通しているため、凹部５５の幅寸法を適宜調整すれば、溶融したはんだ７の表面張力によって、はんだ７を一端部５１の下面５１ｂ側から上面５１ａまで濡れ広がらせて、一端部５１をはんだ７に係合させることも可能である。言い換えれば、接続板５を第一リード２に対してより強固に固定することもできる。 Moreover, in the connection structure of this embodiment, since the upper surfaces 21a and 31a of the inner leads 21 and 31 of each lead 2 and 3 are located lower than the upper surfaces 22a and 32a of the outer leads 22 and 32, they melted during reflow. Even if the solder 7 wets and spreads on the upper surfaces 21a, 31a of the inner leads 21, 31, it is possible to reliably prevent the solder 7 from flowing out to the outer leads 22, 32 side.
In this embodiment, since the concave portion 55 penetrates in the thickness direction of the one end portion 51, if the width dimension of the concave portion 55 is appropriately adjusted, the solder 7 is attached to the one end portion 51 by the surface tension of the molten solder 7. It is also possible to engage one end portion 51 with the solder 7 by wetting and spreading from the lower surface 51b side to the upper surface 51a. In other words, the connection plate 5 can be more firmly fixed to the first lead 2.

なお、第一実施形態において、凹部５５の平面視形状は、丸みを帯びた形状に限らず、例えば図５に示す矩形状をはじめとする任意の多角形状に形成されていてもよい。
また、凹部５５は一つに限らず、例えば図６に示すように複数形成されてもよい。この場合、複数の凹部５５は、例えば図６に示すように、接続板５の幅方向に連ねて形成されてもよいが、例えば接続板５の幅方向に間隔をあけて形成されていてもよい。
図６（ａ），（ｂ）に示す凹部５５は、いずれも平面視で丸みを帯びた形状となっているが、図６（ａ）に示す凹部５５は、上記第一実施形態と同様に、凹部５５の内側面が窪むように湾曲しており、図６（ｂ）に示す凹部５５は、その内側面が凹部５５内の空間側に膨出するように湾曲している。一方、図６（ｃ）に示す凹部５５は、図５と同様の平面視多角形状とされ、具体的には、平面視三角形状に形成されている。 In addition, in 1st embodiment, the planar view shape of the recessed part 55 is not restricted to the rounded shape, For example, you may form in arbitrary polygonal shapes including the rectangular shape shown in FIG.
Moreover, the recessed part 55 is not restricted to one, For example, as shown in FIG. In this case, as shown in FIG. 6, for example, the plurality of recesses 55 may be formed continuously in the width direction of the connection plate 5, but may be formed at intervals in the width direction of the connection plate 5, for example. Good.
6 (a) and 6 (b) both have a rounded shape in plan view, but the recess 55 shown in FIG. 6 (a) is similar to the first embodiment. The inner surface of the recess 55 is curved so as to be depressed, and the recess 55 shown in FIG. 6B is curved so that the inner surface bulges toward the space inside the recess 55. On the other hand, the recessed part 55 shown in FIG.6 (c) is made into the polygonal shape of planar view similar to FIG. 5, and is specifically formed in the planar view triangular shape.

なお、図６においては、複数の凹部５５が一端部５１の同一の側面全体を削り取るように形成されているが、例えば同一の側面の一部を残すように形成されてもよい。
さらに、図６においては、複数の凹部５５が一端部５１の同一の側面に開口しているが、例えば互いに異なる側面に開口していてもよい。
また、図６において、複数の凹部５５は同一の形状に形成されているが、例えば互いに異なる形状に形成されていてもよい。 In FIG. 6, the plurality of recesses 55 are formed so as to scrape the entire side surface of the one end 51, but may be formed so as to leave a part of the same side surface, for example.
Furthermore, in FIG. 6, although the some recessed part 55 is opened on the same side surface of the one end part 51, you may open on the mutually different side surface, for example.
Moreover, in FIG. 6, although the some recessed part 55 is formed in the same shape, you may form in a mutually different shape, for example.

さらに、接続板５の板厚方向に貫通する凹部５５は、一端部５１のみに形成されることに限らず、例えば図７に示すように、一端部５１からこれに連なる立設板部５４まで延びるように形成されていてもよい。なお、図７においては、凹部５５が接続板５の長手方向に交差する一端部５１の側面５１ｃに開口しているため、凹部５５の延在方向が、一端部５１及び立設板部５４の両方において接続板５の長手方向に一致している。
この構成では、第一実施形態と同様の効果を奏することに加え、リフローを実施した際に、溶融したはんだ７を、毛細管現象等によって一端部５１から立設板部５４まで凹部５５の延在方向に濡れ広がらせることが可能となる。すなわち、接続板５と第一リード２との接合面積をさらに増加させて、接続板５を第一リード２に対してより強固に固定することができる。 Further, the recess 55 penetrating in the thickness direction of the connection plate 5 is not limited to being formed only at the one end 51, but for example, as shown in FIG. 7, from the one end 51 to the standing plate 54 connected to the one end 51. It may be formed to extend. In FIG. 7, since the concave portion 55 opens in the side surface 51 c of the one end portion 51 that intersects the longitudinal direction of the connection plate 5, the extending direction of the concave portion 55 is the end portion 51 and the standing plate portion 54. In both cases, it coincides with the longitudinal direction of the connecting plate 5.
In this configuration, in addition to the same effects as in the first embodiment, when reflow is performed, the melted solder 7 is caused to extend from the one end portion 51 to the standing plate portion 54 by a capillary phenomenon or the like. It becomes possible to spread and spread in the direction. That is, the connection area between the connection plate 5 and the first lead 2 can be further increased, and the connection plate 5 can be more firmly fixed to the first lead 2.

〔第二実施形態〕
次に、本発明の第二実施形態について図８，９を参照して説明する。なお、ここでは、第一実施形態との相違点のみについて説明し、第一実施形態の接続板５や半導体装置１と同一の構成要素については同一符号を付し、その説明を省略する。
図８，９に示すように、この実施形態に係る接続板５の一端部５１には、その板厚方向に貫通するものの、一端部５１の側面５１ｃ，５１ｄには開口しない凹部５６（貫通孔）が形成されている。なお、図示例では、凹部５６が丸みを帯びた平面視円形状に形成されているが、矩形状をはじめとする多角形状等の任意の平面視形状に形成されてよい。また、平面視した凹部５６の大きさは、例えば図９に示すように、一端部５１の板厚方向にわたって一定に設定されてもよいが、例えば接続板５の下面５１ｂ側から上面５１ａ側に向かうにしたがって大きくなる、あるいは、小さくなるように設定されてもよい。さらに、凹部５６は、一つだけ形成されることに限らず、例えば複数形成されてもよい。 [Second Embodiment]
Next, a second embodiment of the present invention will be described with reference to FIGS. Here, only differences from the first embodiment will be described, and the same components as those of the connection plate 5 and the semiconductor device 1 of the first embodiment will be denoted by the same reference numerals, and the description thereof will be omitted.
As shown in FIGS. 8 and 9, the one end 51 of the connection plate 5 according to this embodiment penetrates in the thickness direction, but does not open to the side surfaces 51c and 51d of the one end 51 (through hole). ) Is formed. In the illustrated example, the concave portion 56 is formed in a rounded plan view circular shape, but may be formed in an arbitrary plan view shape such as a polygonal shape including a rectangular shape. Further, the size of the concave portion 56 in plan view may be set to be constant over the thickness direction of the one end portion 51 as shown in FIG. 9, for example, from the lower surface 51 b side of the connection plate 5 to the upper surface 51 a side, for example. You may set so that it may become large or may become small as it goes. Furthermore, the number of the recesses 56 is not limited to one, and a plurality of recesses 56 may be formed, for example.

この接続板５は、第一実施形態の場合と同様にして、第一リード２及び半導体チップ４に接合することが可能である。そして、この接合に際して第一実施形態と同様のリフローを実施すると、第一インナーリード２１上で溶融したはんだ７は、接続板５の一端部５１の下面５１ｂや側面５１ｃ，５１ｄに加え、凹部５６の内面にも濡れ広がる。さらに、溶融したはんだ７は、その表面張力によって凹部５６を通じて接続板５の一端部５１の下面５１ｂ側から上面５１ａに到達して濡れ広がることになる。
※実２効果（ＣＬ２）
この実施形態に係る接続板５では、前述した第一実施形態と同様の効果を奏する。
さらに、はんだ７が凹部５６を介して一端部５１の上面５１ａまで濡れ広がるため、一端部５１をはんだ７に係合させて、接続板５を第一リード２に対してより強固に固定することができる。 The connection plate 5 can be joined to the first lead 2 and the semiconductor chip 4 in the same manner as in the first embodiment. When reflow similar to that of the first embodiment is performed at the time of joining, the solder 7 melted on the first inner lead 21 is added to the concave portion 56 in addition to the lower surface 51b and the side surfaces 51c and 51d of the one end portion 51 of the connection plate 5. It spreads wet on the inside. Furthermore, the melted solder 7 reaches the upper surface 51a from the lower surface 51b side of the one end portion 51 of the connecting plate 5 through the recess 56 due to the surface tension, and spreads wet.
* Real 2 effect (CL2)
The connection plate 5 according to this embodiment has the same effects as those of the first embodiment described above.
Further, since the solder 7 spreads to the upper surface 51a of the one end 51 through the recess 56, the one end 51 is engaged with the solder 7 and the connection plate 5 is more firmly fixed to the first lead 2. Can do.

なお、第二実施形態において、板厚方向に貫通する凹部５６は一端部５１のみに形成されるとしたが、図７に示す凹部５５と同様に、例えば一端部５１からこれに連なる立設板部５４まで延びるように形成されていてもよい。この構成では、第二実施形態と同様の効果を奏することに加え、はんだ７に対する接続板５の濡れ面積がさらに増加するため、接続板５と第一リード２との接合面積を増加させて、接続板５を第一リード２に対してより強固に固定することができる。   In the second embodiment, the concave portion 56 penetrating in the plate thickness direction is formed only in the one end portion 51. However, like the concave portion 55 shown in FIG. It may be formed to extend to the portion 54. In this configuration, in addition to producing the same effect as in the second embodiment, the wetting area of the connection plate 5 with respect to the solder 7 is further increased. Therefore, the bonding area between the connection plate 5 and the first lead 2 is increased, The connection plate 5 can be more firmly fixed to the first lead 2.

〔第三実施形態〕
次に、本発明の第三実施形態について図１０，１１を参照して説明する。なお、ここでは、第一、第二実施形態との相違点のみについて説明し、第一、第二実施形態の接続板５や半導体装置１と同一の構成要素については同一符号を付し、その説明を省略する。
図１０，１１に示すように、この実施形態に係る接続板５の一端部５１には、その下面５１ｂから窪むと共に、接続板５の長手方向に延びる有底溝状の凹部５７が形成されている。 [Third embodiment]
Next, a third embodiment of the present invention will be described with reference to FIGS. Here, only differences from the first and second embodiments will be described, and the same components as those of the connection plate 5 and the semiconductor device 1 of the first and second embodiments will be denoted by the same reference numerals. Description is omitted.
As shown in FIGS. 10 and 11, one end 51 of the connection plate 5 according to this embodiment is formed with a bottomed groove-shaped recess 57 that is recessed from the lower surface 51 b and extends in the longitudinal direction of the connection plate 5. ing.

この凹部５７は、第一実施形態の凹部５５と同様に、接続板５の長手方向に交差する一端部５１の側面５１ｃに開口している。また、この凹部５７は、一端部５１の下面５１ｂからこれに連なる立設板部５４の下面５４ｂまで延びている。さらに、一端部５１と立設板部５４との間の折り曲げ部分における凹部５７の底面が、一端部５１及び立設板部５４における凹部５７の底面に対して傾斜する平らな傾斜面５７ａとなっている。傾斜面５７ａが形成されていることで、折り曲げ部分における凹部５７の深さ寸法は、凹部５７の延在方向に変化するように設定され、一端部５１及び立設板部５４における凹部５７の深さ寸法よりも大きくなっている。   The recess 57 is open to the side surface 51c of the one end 51 that intersects the longitudinal direction of the connection plate 5 in the same manner as the recess 55 of the first embodiment. Further, the concave portion 57 extends from the lower surface 51b of the one end portion 51 to the lower surface 54b of the standing plate portion 54 continuous therewith. Further, the bottom surface of the concave portion 57 in the bent portion between the one end portion 51 and the standing plate portion 54 becomes a flat inclined surface 57 a that is inclined with respect to the bottom surface of the concave portion 57 in the one end portion 51 and the standing plate portion 54. ing. By forming the inclined surface 57a, the depth dimension of the recessed portion 57 in the bent portion is set to change in the extending direction of the recessed portion 57, and the depth of the recessed portion 57 in the one end portion 51 and the standing plate portion 54 is set. It is larger than the size.

なお、この凹部５７は、例えば一つだけ形成されてもよいが、例えば図１１に示すように複数形成されてもよい。この場合、複数の凹部５７は、図示例のように接続板５の幅方向に間隔をあけて配列されてもよいが、例えば間隔をあけずに連ねて配列されてもよい。また、複数の凹部５７は、例えば図１１に示すように一端部５１の同一の側面５１ｃに開口してもよいが、例えば互いに異なる側面５１ｃ，５１ｄに開口していてもよい。
さらに、凹部５７の幅寸法は、例えば図１１に示すように凹部５７の延在方向にわたって一定に設定されてもよいが、例えば凹部５７の延在方向に変化するように設定されてもよい。
また、接続板５の長手方向に直交する凹部５７の断面形状は、例えば図１１（ａ）に示す三角形状や、図１１（ｂ）に示す矩形状等の多角形状とされてもよいし、例えば図１１（ｃ）に示す円弧状とされてもよい。 For example, only one recess 57 may be formed, but a plurality of recesses 57 may be formed as shown in FIG. In this case, although the some recessed part 57 may be arranged at intervals in the width direction of the connection board 5 like the example of illustration, it may be arranged in a row without spacing, for example. Moreover, although the some recessed part 57 may open to the same side surface 51c of the one end part 51 as shown, for example in FIG. 11, you may open to the side surfaces 51c and 51d which are mutually different, for example.
Furthermore, the width dimension of the concave portion 57 may be set to be constant over the extending direction of the concave portion 57 as shown in FIG. 11, for example, but may be set to change in the extending direction of the concave portion 57, for example.
Moreover, the cross-sectional shape of the recessed part 57 orthogonal to the longitudinal direction of the connection board 5 may be made into polygonal shapes, such as the triangular shape shown to Fig.11 (a), the rectangular shape shown to FIG.11 (b), for example, For example, the arc shape shown in FIG.

この接続板５は、第一実施形態の場合と同様にして、第一リード２及び半導体チップ４に接合することが可能である。そして、この接合に際して第一実施形態と同様のリフローを実施すると、第一インナーリード２１上で溶融したはんだ７は、接続板５の一端部５１の下面５１ｂや側面５１ｃに加え、凹部５７の内面にも濡れ広がる。さらに、溶融したはんだ７は、毛細管現象等によって一端部５１から立設板部５４まで凹部５７の延在方向に濡れ広がる。その結果、接続板５を第一リード２に接合した状態では、立設板部５４がその下面５４ｂ側からはんだ７によって支持されることになる。   The connection plate 5 can be joined to the first lead 2 and the semiconductor chip 4 in the same manner as in the first embodiment. When the reflow similar to that of the first embodiment is performed at the time of joining, the solder 7 melted on the first inner lead 21 is added to the inner surface of the recess 57 in addition to the lower surface 51b and the side surface 51c of the one end portion 51 of the connection plate 5. Even wet. Further, the melted solder 7 spreads in the extending direction of the recess 57 from the one end 51 to the standing plate 54 by a capillary phenomenon or the like. As a result, in a state where the connection plate 5 is joined to the first lead 2, the standing plate portion 54 is supported by the solder 7 from the lower surface 54 b side.

したがって、この実施形態に係る接続板５では、第一実施形態と同様の効果を奏する。
さらに、凹部５７が立設板部５４まで延びていることで、はんだ７に対する接続板５の濡れ面積が増加するため、接続板５と第一リード２との接合面積を増加させることができる。また、接続板５を第一リード２に接合した状態では、立設板部５４がその下面５４ｂ側からはんだ７によって支持されているため、一端部５１が第一インナーリード２１の上面２１ａに沿って立設板部５４側に移動することを確実に防止することができる。以上のことから接続板５を第一リード２に対してより強固に固定することが可能となる。
また、接続板５の一端部５１と立設板部５４との間の折り曲げ部分における凹部５７の底面が傾斜面５７ａとなっていることで、リフロー時に溶融したはんだ７を一端部５１側から立設板部５４側に向けてより確実かつ短時間で濡れ広がらせることができる。 Therefore, the connection plate 5 according to this embodiment has the same effects as the first embodiment.
Further, since the recessed portion 57 extends to the standing plate portion 54, the wetting area of the connection plate 5 with respect to the solder 7 increases, so that the bonding area between the connection plate 5 and the first lead 2 can be increased. Further, in the state where the connecting plate 5 is joined to the first lead 2, the standing plate portion 54 is supported by the solder 7 from the lower surface 54 b side, so that the one end portion 51 extends along the upper surface 21 a of the first inner lead 21. Therefore, it is possible to reliably prevent movement toward the standing plate portion 54 side. From the above, the connection plate 5 can be more firmly fixed to the first lead 2.
Further, the bottom surface of the recess 57 in the bent portion between the one end portion 51 of the connecting plate 5 and the standing plate portion 54 is an inclined surface 57a, so that the solder 7 melted at the time of reflow is raised from the one end portion 51 side. It is possible to spread and spread more reliably and in a short time toward the installation plate portion 54 side.

なお、第三実施形態において、一端部５１と立設板部５４との間の折り曲げ部分における凹部５７の底面は、平らな傾斜面５７ａとなっていなくてもよく、例えば図１２に示すように、折り曲げ部分形状に対応する湾曲面５７ｂとなっていてもよい。言い換えれば、凹部５７の深さ寸法は、凹部５７の延在方向にわたって一定に設定されてもよい。   In the third embodiment, the bottom surface of the recessed portion 57 in the bent portion between the one end portion 51 and the standing plate portion 54 does not have to be a flat inclined surface 57a. For example, as shown in FIG. The curved surface 57b may correspond to the bent portion shape. In other words, the depth dimension of the recess 57 may be set constant over the extending direction of the recess 57.

以上、本発明の接続板５、これを備える接続構造及び半導体装置１に係る実施形態について説明したが、本発明は上述した実施形態に限定されるものではなく、本発明の趣旨を逸脱しない範囲において種々の変更を加えることが可能である。
例えば凹部５５，５６，５７は、上記実施形態において示したものに限らず、少なくとも第一インナーリード２１の上面２１ａに対向する一端部５１の下面５１ｂから窪んで形成されていればよい。
また、接続板５の一端部５１と他端部５２との間には、断面矩形状に折り曲げられた連結部５３が形成されるとしたが、例えば立設板部５４のみが形成されてもよい。さらに、接続板５は、例えば連結部５３や立設板部５４を有さずに、全体が平板状に形成されていてもよい。 As mentioned above, although the connection board 5 of this invention, the connection structure provided with this, and embodiment which concerns on the semiconductor device 1 were demonstrated, this invention is not limited to embodiment mentioned above, The range which does not deviate from the meaning of this invention Various changes can be made in.
For example, the recesses 55, 56, and 57 are not limited to those shown in the above embodiment, and may be formed so as to be recessed from the lower surface 51 b of the one end 51 that faces at least the upper surface 21 a of the first inner lead 21.
Further, although the connecting portion 53 bent into a rectangular cross section is formed between the one end portion 51 and the other end portion 52 of the connection plate 5, for example, even if only the standing plate portion 54 is formed. Good. Further, the connection plate 5 may be formed as a flat plate as a whole without having the connecting portion 53 and the standing plate portion 54, for example.

また、本発明の半導体装置に適用される半導体チップは、上記実施形態のものに限らず、例えば上面のみに複数の電極パッドを形成したものであってもよい。言い換えれば、本発明は、例えば上記構成の半導体チップと、半導体チップの各電極パッドに各々電気接続するための複数のリードと、複数の電極パッド及びリードを個別に電気接続する複数の接続板とを備える半導体装置にも適用可能である。   Further, the semiconductor chip applied to the semiconductor device of the present invention is not limited to the above-described embodiment, and for example, a plurality of electrode pads may be formed only on the upper surface. In other words, the present invention provides, for example, a semiconductor chip having the above-described configuration, a plurality of leads for electrical connection to each electrode pad of the semiconductor chip, and a plurality of connection plates for electrically connecting the plurality of electrode pads and leads individually. It is applicable also to a semiconductor device provided with.

１ 半導体装置
２ 第一リード
２１ 一端（インナーリード）
２１ａ 上面
２２ 他端（アウターリード）
２２ａ 上面
２３段差部
３ 第二リード
３１ 一端（インナーリード）
３１ａ 上面
３２ 他端（アウターリード）
３２ａ 上面
３３段差部
４ 半導体チップ
５ 接続板
５１ 一端部
５１ａ 上面
５１ｂ 下面
５１ｃ，５１ｄ 側面
５２ 他端部
５３ 連結部
５４ 立設板部
５４ｂ 下面
５５，５６，５７ 凹部
５７ａ 傾斜面
５７ｂ 湾曲面
６ モールド樹脂
７ はんだ 1 Semiconductor Device 2 First Lead 21 One End (Inner Lead)
21a Upper surface 22 The other end (outer lead)
22a, upper surface 23, stepped portion 3, second lead 31, one end (inner lead)
31a Upper surface 32 The other end (outer lead)
32a Upper surface 33 Step portion 4 Semiconductor chip 5 Connection plate 51 One end portion 51a Upper surface 51b Lower surface 51c, 51d Side surface 52 Other end portion 53 Connection portion 54 Standing plate portion 54b Lower surface 55, 56, 57 Recessed portion 57a Inclined surface 57b Curved surface 6 Mold Resin 7 Solder

Claims (9)

互いに間隔をあけて配された半導体チップ及び導電性を有する板状のリードに両端部を接合することにより、これら半導体チップとリードとを電気接続する接続板であって、
前記リードの上面に配される平板状の一端部には、前記リードの上面に対向する前記一端部の下面から窪む凹部が形成され、
前記凹部が、前記接続板の板厚方向に貫通し、
前記凹部は、前記一端部の下面側から上面側に向かうにしたがって大きくなるように設定されていることを特徴とする接続板。 A connecting plate that electrically connects the semiconductor chip and the lead by joining both ends to a semiconductor chip and a conductive plate-like lead that are spaced apart from each other,
On one end of the flat plate disposed on the upper surface of the lead, a recess is formed that is recessed from the lower surface of the one end facing the upper surface of the lead .
The recess penetrates in the thickness direction of the connection plate;
The connecting plate according to claim 1, wherein the concave portion is set to increase from the lower surface side to the upper surface side of the one end portion . 前記一端部に対して折り曲げられることで前記リードの上面に立設される平板状の立設板部が形成され、
前記凹部が、前記一端部の下面からこれに連なる前記立設板部の下面まで延びていることを特徴とする請求項１に記載の接続板。 A flat plate-like plate portion that is erected on the upper surface of the lead by being bent with respect to the one end portion is formed,
The connection plate according to claim 1, wherein the concave portion extends from a lower surface of the one end portion to a lower surface of the standing plate portion continuous therewith. 前記凹部が、平面視で丸みを帯びた形状に形成されていることを特徴とする請求項１又は請求項２に記載の接続板。 The concave portion, connecting plate according to claim 1 or claim 2, characterized in that it is formed into a rounded shape in a plan view. 前記凹部が、平面視で多角形状に形成されていることを特徴とする請求項１又は請求項２に記載の接続板。 The concave portion, connecting plate according to claim 1 or claim 2, characterized in that it is formed in a polygonal shape in plan view. 前記凹部が、前記一端部の側面に開口していることを特徴とする請求項１から請求項４のいずれか１項に記載の接続板。 The connecting plate according to any one of claims 1 to 4 , wherein the concave portion is open to a side surface of the one end portion. 前記凹部が複数形成されていることを特徴とする請求項１から請求項５のいずれか１項に記載の接続板。 The connection plate according to any one of claims 1 to 5 , wherein a plurality of the recesses are formed. 請求項１から請求項６のいずれか１項に記載の接続板と、導電性を有する板状のリードとがはんだによって接合されていることを特徴とする接合構造。 7. A joining structure, wherein the connection plate according to claim 1 and a plate-like lead having conductivity are joined by solder. 前記一端部が配置される前記リードの一端の上面が、当該リードの他端の上面よりも低く位置することを特徴とする請求項７に記載の接合構造。 The bonding structure according to claim 7 , wherein an upper surface of one end of the lead on which the one end portion is disposed is positioned lower than an upper surface of the other end of the lead. 請求項１から請求項６のいずれか１項に記載の接続板を用いて製造される半導体装置であって、
前記接続板の両端部が、はんだによって、互いに間隔をあけて配された半導体チップと導電性を有する板状のリードとに接合されていることを特徴とする半導体装置。 A semiconductor device manufactured using the connection plate according to any one of claims 1 to 6 ,
A semiconductor device characterized in that both ends of the connecting plate are joined to a semiconductor chip and a conductive plate-like lead which are spaced apart from each other by solder.
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