JP5541440B2 - 合金線およびその製造方法 - Google Patents
合金線およびその製造方法 Download PDFInfo
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- JP5541440B2 JP5541440B2 JP2009233478A JP2009233478A JP5541440B2 JP 5541440 B2 JP5541440 B2 JP 5541440B2 JP 2009233478 A JP2009233478 A JP 2009233478A JP 2009233478 A JP2009233478 A JP 2009233478A JP 5541440 B2 JP5541440 B2 JP 5541440B2
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- 229910045601 alloy Inorganic materials 0.000 title claims description 18
- 239000000956 alloy Substances 0.000 title claims description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 229910001252 Pd alloy Inorganic materials 0.000 claims description 68
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 37
- 238000005491 wire drawing Methods 0.000 claims description 36
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 34
- 239000010931 gold Substances 0.000 claims description 27
- 229910052737 gold Inorganic materials 0.000 claims description 27
- 229910052709 silver Inorganic materials 0.000 claims description 19
- 239000004332 silver Substances 0.000 claims description 19
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 17
- 229910052763 palladium Inorganic materials 0.000 claims description 17
- 239000007769 metal material Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000000155 melt Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000007670 refining Methods 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Description
一方、先行技術として、例えば特許文献1は、金と、銀と、ゲルマニウム,シリコン,アルミニウム,又は銅のいずれか1つと、からなる金合金ボンディングワイヤの組成を開示している。
金および銀の成分を含んだ主要金属材料が真空溶炉内に入れられ、次に、真空溶炉内にパラジウムを含んだ副次的原料金属材料が混入されると、真空溶炉が攪拌および溶解を行い、金銀パラジウム合金溶解液を作り出す。金銀パラジウム合金溶解液は、金が30.00重量%、銀が66.00重量%、パラジウムが4.00重量%含まれる。
金および銀の成分を含んだ主要金属材料が真空溶炉内に入れられ、次に、真空溶炉内にパラジウムを含んだ副次的原料金属材料が混入されると、真空溶炉が攪拌および溶解を行い、金銀パラジウム合金溶解液を作り出す。金銀パラジウム合金溶解液は、金が8.00重量%、銀が86.00重量%、パラジウムが6.00重量%含まれる。
金および銀の成分を含んだ主要金属材料が真空溶炉内に入れられ、次に、真空溶炉内にパラジウムを含んだ副次的原料金属材料が混入されると、真空溶炉が攪拌および溶解を行い、金銀パラジウム合金溶解液を作り出す。金銀パラジウム合金溶解液は、金が9.99重量%、銀が90.00重量%、パラジウムが0.01重量%含まれる。
工程102 溶解精錬が行われる
工程104 引き伸しが行われる
工程106 表面が洗浄される
工程108 アニール処理が行われる
工程102a 真空溶炉内に入れられる
工程102b 攪拌および溶解が行われる
工程102c 金銀パラジウム合金溶解液が作り出される
工程102d 金銀パラジウム合金線材が形成される
工程102e 金銀パラジウム合金線材が巻き取られる
工程102f 成分分析が行われる
工程104a 第1の太線伸線機により引き伸ばしが行われる
工程104b 第2の太線伸線機により引き伸ばしが行われる
工程104c 第1の細線伸線機により引き伸ばしが行われる
工程104d 第2の細線伸線機により引き伸ばしが行われる
工程104e 極細線伸線機により引き伸ばしが行われる
工程104f 超極細線伸線機により引き伸ばしが行われる
Claims (5)
- IC、LEDおよびSAWのパッケージにおいて導線として用いられる、銀、金、パラジウムからなる合金線を製造する製造方法であって、
8.00〜30.00重量%の金および66.00〜90.00重量%の銀の成分を含んだ主要金属材料が提供されるa工程と、
前記主要金属材料が真空溶炉内に入れられ、真空溶炉内に0.01〜6.00重量%のパラジウムである添加金属材料が混入されると、金銀パラジウム合金溶解液が作り出されるb工程と、
前記金銀パラジウム合金溶解液が連続して鋳造され、鋳塊が形成されることなく直接引き伸ばされて金銀パラジウム合金線材が形成されるc工程と、
前記金銀パラジウム合金線材が引き伸ばされて所定の線径の金銀パラジウム合金線に加工されるd工程と、を含むことを特徴とする合金線の製造方法。 - 前記b工程の前記金銀パラジウム合金溶解液が連続して鋳造され、引き伸ばされて線径が4〜8mmの前記金銀パラジウム合金線材が形成され、リールにより前記金銀パラジウム合金線材が巻き取られ、前記金銀パラジウム合金線材の成分分析が行われることを特徴とする請求項1に記載の合金線の製造方法。
- 前記d工程において、線径が4〜8mmの前記金銀パラジウム合金線材が第1の太線伸線機により3mm以下に引き伸ばされ、第2の太線伸線機により1mm以下に引き伸ばされ、
第1の細線伸線機により0.18mm以下に引き伸ばされ、0.18mm以下の前記金銀パラジウム合金線材が第2の細線伸線機、極細線伸線機および超極細線伸線機に順番に引き伸ばされて0.050〜0.010mmの前記金銀パラジウム合金線となることを特徴とする請求項2に記載の合金線の製造方法。 - 前記d工程の後に、前記金銀パラジウム合金線の表面が洗浄されると、乾燥およびアニール処理が行われることを特徴とする請求項3に記載の合金線の製造方法。
- IC、LEDおよびSAWのパッケージにおいて導線として用いられる、組成成分が銀、金、パラジウムからなる合金線であって、
8.00〜30.00重量%の金と、
66.00〜90.00重量%の銀と、
0.01〜6.00重量%のパラジウムと、を含み、
上記合金溶解液から連続鋳造され、鋳塊が形成されることなく直接引き伸ばされて製造されることを特徴とする合金線。
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TW98102770A TW201028227A (en) | 2009-01-23 | 2009-01-23 | Method for manufacturing composite metal wire and product thereof |
TW098102770 | 2009-01-23 |
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JP7445801B2 (ja) | 2019-12-26 | 2024-03-07 | 文化シヤッター株式会社 | 開閉装置用収納構造 |
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JP4771562B1 (ja) | 2011-02-10 | 2011-09-14 | 田中電子工業株式会社 | Ag−Au−Pd三元合金系ボンディングワイヤ |
TW201216300A (en) * | 2011-07-11 | 2012-04-16 | Profound Material Technology Co Ltd | Composite silver thread |
US8940403B2 (en) * | 2012-01-02 | 2015-01-27 | Wire Technology Co., Ltd. | Alloy wire and methods for manufacturing the same |
JP5165810B1 (ja) * | 2012-09-12 | 2013-03-21 | 田中電子工業株式会社 | 銀金パラジウム系合金バンプワイヤ |
JP5399581B1 (ja) * | 2013-05-14 | 2014-01-29 | 田中電子工業株式会社 | 高速信号用ボンディングワイヤ |
KR20160030777A (ko) * | 2014-09-11 | 2016-03-21 | 엠케이전자 주식회사 | 은 합금 본딩 와이어 및 그의 제조 방법 |
JP6753051B2 (ja) * | 2014-10-31 | 2020-09-09 | 日亜化学工業株式会社 | 発光装置 |
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JPH10130882A (ja) * | 1996-10-24 | 1998-05-19 | Tokyo Tungsten Co Ltd | 電子ワイヤー用複合金属線材及びその製造方法 |
JP3612180B2 (ja) * | 1997-08-20 | 2005-01-19 | 新日本製鐵株式会社 | 半導体素子用金銀合金細線 |
JPH11126788A (ja) * | 1997-10-23 | 1999-05-11 | Tanaka Electron Ind Co Ltd | Icチップ接続用金合金線 |
JPH11288962A (ja) * | 1998-04-01 | 1999-10-19 | Sumitomo Metal Mining Co Ltd | ボンディングワイヤ |
JP3329286B2 (ja) * | 1998-11-09 | 2002-09-30 | 三菱マテリアル株式会社 | 半導体装置のボンディング用金合金細線 |
JP5010495B2 (ja) * | 2007-02-06 | 2012-08-29 | 新日鉄マテリアルズ株式会社 | 半導体素子接続用金線 |
-
2009
- 2009-01-23 TW TW98102770A patent/TW201028227A/zh unknown
- 2009-10-07 JP JP2009233478A patent/JP5541440B2/ja active Active
Cited By (1)
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JP7445801B2 (ja) | 2019-12-26 | 2024-03-07 | 文化シヤッター株式会社 | 開閉装置用収納構造 |
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JP2010171378A (ja) | 2010-08-05 |
TW201028227A (en) | 2010-08-01 |
TWI373382B (ja) | 2012-10-01 |
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