JP5525894B2 - 固体撮像素子の製造方法 - Google Patents
固体撮像素子の製造方法 Download PDFInfo
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- JP5525894B2 JP5525894B2 JP2010084409A JP2010084409A JP5525894B2 JP 5525894 B2 JP5525894 B2 JP 5525894B2 JP 2010084409 A JP2010084409 A JP 2010084409A JP 2010084409 A JP2010084409 A JP 2010084409A JP 5525894 B2 JP5525894 B2 JP 5525894B2
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- 239000012964 benzotriazole Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
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- LLCSWKVOHICRDD-UHFFFAOYSA-N buta-1,3-diyne Chemical group C#CC#C LLCSWKVOHICRDD-UHFFFAOYSA-N 0.000 description 1
- FQRWAZOLUJHNDT-UHFFFAOYSA-N c12c3c4c5c6c7c8c9c%10c%11c%12c%13c%14c%15c%16c%17c(c1c1c4c7c%10c%13c%161)c1c2c2c4c7c%10c%13c%16c%18c%19c%20c%21c%22c%23c%24c%25c%26c%27c%28c%29c(c7c7c%13c%19c%22c%25c%287)c4c1c1c%17c%15c(c%27c%291)c1c%14c%12c(c%24c%261)c1c%11c9c(c%21c%231)c1c8c6c(c%18c%201)c1c5c3c2c%10c%161 Chemical compound c12c3c4c5c6c7c8c9c%10c%11c%12c%13c%14c%15c%16c%17c(c1c1c4c7c%10c%13c%161)c1c2c2c4c7c%10c%13c%16c%18c%19c%20c%21c%22c%23c%24c%25c%26c%27c%28c%29c(c7c7c%13c%19c%22c%25c%287)c4c1c1c%17c%15c(c%27c%291)c1c%14c%12c(c%24c%261)c1c%11c9c(c%21c%231)c1c8c6c(c%18c%201)c1c5c3c2c%10c%161 FQRWAZOLUJHNDT-UHFFFAOYSA-N 0.000 description 1
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- ATNHDLDRLWWWCB-AENOIHSZSA-M chlorophyll a Chemical compound C1([C@@H](C(=O)OC)C(=O)C2=C3C)=C2N2C3=CC(C(CC)=C3C)=[N+]4C3=CC3=C(C=C)C(C)=C5N3[Mg-2]42[N+]2=C1[C@@H](CCC(=O)OC\C=C(/C)CCC[C@H](C)CCC[C@H](C)CCCC(C)C)[C@H](C)C2=C5 ATNHDLDRLWWWCB-AENOIHSZSA-M 0.000 description 1
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- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
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- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
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- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical compound C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 1
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- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
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- JZRYQZJSTWVBBD-UHFFFAOYSA-N pentaporphyrin i Chemical compound N1C(C=C2NC(=CC3=NC(=C4)C=C3)C=C2)=CC=C1C=C1C=CC4=N1 JZRYQZJSTWVBBD-UHFFFAOYSA-N 0.000 description 1
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Description
図1に示す固体撮像素子100は、基板101と、絶縁層102と、接続電極103と、画素電極104と、接続部105と、接続部106と、有機膜107と、対向電極108と、緩衝層109と、封止膜110と、カラーフィルタ111と、隔壁112と、遮光層113と、保護層114と、対向電極電圧供給部115と、読出し回路116とを備える。
最初に、図2に示すように、基板101に読出し回路116、絶縁層102画素電極104を形成する。画素電極104が形成された後、基板101を洗浄する。
有機膜107は、光電変換層と電荷ブロッキング層とを含む。
画素電極104は、画素電極104上の光電変換層を含む有機膜107で発生した電子又は正孔の電荷を捕集する。各画素電極104で捕集された電荷が、対応する各画素の読出し回路116で信号となり、複数の画素から取得した信号から画像が合成される。
対向電極108は、光電変換層を含む有機膜107を、画素電極104と共に挟込むことで有機膜107に電界を掛け、又、光電変換層で発生した電荷のうち、画素電極104で捕集する信号電荷と逆の極性を持つ電荷を捕集する。この逆極性電荷の捕集は各画素間で分割する必要がないため、対向電極108は複数の画素で共通にすることができる。そのために共通電極(コモン電極)と呼ばれることもある。
封止膜110としては次の条件が求められる。
第一に、積層型固体撮像素子の各製造工程において溶液、プラズマなどに含まれる光電変換材料を劣化させる因子の浸入を阻止して光電変換層を保護することが挙げられる。
第二に、積層型固体撮像素子を製造後に、水分子などの光電変換材料を劣化させる因子の浸入を阻止して、長期間の保存/使用にわたって、光電変換層の劣化を防止する。
第三に、封止膜110を形成する際は既に形成された光電変換層を劣化させない。
第四に、入射光は封止膜110を通じて光電変換層に到達するので、光電変換層で検知する波長の光に対して封止膜は透明でなくてはならない。
有機材料を含む光電変換材料は水分子などの劣化因子の存在で顕著にその性能が劣化してしまう。そのために、水分子を浸透させない緻密な金属酸化物・金属窒化物・金属窒化酸化物などセラミクスやダイヤモンド状炭素(DLC)などで光電変換層全体を被覆して封止することが必要である。従来から、酸化アルミニウム、酸化珪素、窒化珪素、窒化酸化珪素やそれらの積層構成、それらと有機高分子の積層構成などを封止膜110として、各種真空成膜技術で形成されている。もっとも、これら従来の封止膜110は、基板表面の構造物、基板表面の微小欠陥、基板表面に付着したパーティクルなどによる段差において、薄膜の成長が困難なので(段差が影になるので)平坦部と比べて膜厚が顕著に薄くなる。このために段差部分が劣化因子の浸透する経路になってしまう。この段差を封止膜110で完全に被覆するには、平坦部において1μm以上の膜厚になるように成膜して、封止膜110全体を厚くする必要があった。
複数の画素部にはそれぞれカラーフィルタ111が設けられている。また複数の画素部のうち隣り合うカラーフィルタ111の間に設けられた隔壁112は、画素部に入射した光を該画素部の光電変換層へ集光させるための集光手段として機能する。カラーフィルタ製造工程は、遮光層形成工程、第1色カラーフィルタ形成工程、第2色カラーフィルタ形成工程、第3色カラーフィルタ形成工程、隔壁形成工程とからなる。
遮光層113として、第1〜3色カラーフィルタのいずれかを有効画素領域外に形成してもよく、遮光層113のみを形成する工程を省略でき製造コストを抑えられる。隔壁形成工程は、遮光層形成工程後、第1色カラーフィルタ形成工程後、第2色カラーフィルタ形成工程後、第3色カラーフィルタ形成工程後のいずれかで実施でき、利用する製造技術、製造方法の組合せにより適宜選択できる。
(1)基板と、前記基板上に設けられた有機膜と、前記有機膜に入射した光に応じて電荷を生成する画素領域とを備える固体撮像素子の製造方法であって、
前記基板の光入射側表面に前記有機膜を蒸着する蒸着工程と、
前記蒸着工程の後、前記有機膜上に他の膜を成膜する前に、蒸着された前記有機膜を磁場にさらすことによって、該有機膜表面に付着したパーティクルを除去するパーティクル除去工程と、を有する固体撮像素子の製造方法。
(2)(1)に記載の固体撮像素子の製造方法であって、
前記パーティクル除去工程において、磁石を用いて前記磁場を形成し、前記パーティクルを前記磁石に吸着させる固体撮像素子の製造方法。
(3)(1)又は(2)に記載の固体撮像素子の製造方法であって、
前記蒸着工程において、シリコンマスクを用いて前記有機膜をパターニングする固体撮像素子の製造方法。
(4)(1)から(3)のいずれか1項に記載の固体撮像素子の製造方法であって、
前記パーティクル除去工程の後に、前記有機膜上に透明な電極を形成する画素電極形成工程と、
前記画素電極を覆う封止膜を形成する封止膜形成工程と、を有する固体撮像素子の製造方法。
(5)(1)から(4)のいずれか1項に記載の固体撮像素子の製造方法であって、
前記固体撮像素子が複数の画素部を有し、前記画素部が、画素電極と、前記画素電極の上方に設けられた前記有機膜と、前記有機膜の上方に前記複数の画素部で共有に設けられた対向電極と、を含む固体撮像素子の製造方法。
(6)基板と、前記基板上に設けられた有機膜と、前記有機膜に入射した光に応じて電荷を生成する画素領域とを備える固体撮像素子の製造方法であって、
前記基板の光入射側表面に、前記有機膜を、シリコンマスクを用いてパターン蒸着する蒸着工程を有する固体撮像素子の製造方法。
101 基板
104 画素電極
107 有機膜
108 対向電極
110 封止膜
M マスク
MG 磁石
Claims (5)
- 基板と、前記基板上に設けられた有機膜と、前記有機膜に入射した光に応じて電荷を生成する画素領域とを備える固体撮像素子の製造方法であって、
前記基板の光入射側表面に前記有機膜を蒸着する蒸着工程と、
前記蒸着工程の後、前記有機膜上に他の膜を成膜する前に、蒸着された前記有機膜を磁場にさらすことによって、該有機膜表面に付着した金属を除去する金属除去工程と、を有する固体撮像素子の製造方法。 - 請求項1に記載の固体撮像素子の製造方法であって、
前記金属除去工程において、磁石を用いて前記磁場を形成し、前記金属を前記磁石に吸着させる固体撮像素子の製造方法。 - 請求項1又は2に記載の固体撮像素子の製造方法であって、
前記蒸着工程において、シリコンマスクを用いて前記有機膜をパターニングする固体撮像素子の製造方法。 - 請求項1から3のいずれか1項に記載の固体撮像素子の製造方法であって、
前記金属除去工程の後に、前記有機膜上に透明な対向電極を形成する対向電極形成工程と、
前記対向電極を覆う封止膜を形成する封止膜形成工程と、を有する固体撮像素子の製造方法。 - 請求項1から4のいずれか1項に記載の固体撮像素子の製造方法であって、
前記固体撮像素子が複数の画素部を有し、前記画素部が、画素電極と、前記画素電極の上方に設けられた前記有機膜と、前記有機膜の上方に前記複数の画素部で共有に設けられた対向電極と、を含む固体撮像素子の製造方法。
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