JP5521132B2 - ダイヤモンド電子素子 - Google Patents
ダイヤモンド電子素子 Download PDFInfo
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- 239000010432 diamond Substances 0.000 title claims description 484
- 229910003460 diamond Inorganic materials 0.000 title claims description 483
- 239000000758 substrate Substances 0.000 claims description 87
- 238000004854 X-ray topography Methods 0.000 claims description 65
- 238000002441 X-ray diffraction Methods 0.000 claims description 57
- 239000013078 crystal Substances 0.000 claims description 53
- 230000007547 defect Effects 0.000 claims description 46
- 239000002131 composite material Substances 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 18
- 239000007789 gas Substances 0.000 claims description 14
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 10
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 7
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 5
- UBAZGMLMVVQSCD-UHFFFAOYSA-N carbon dioxide;molecular oxygen Chemical compound O=O.O=C=O UBAZGMLMVVQSCD-UHFFFAOYSA-N 0.000 claims description 5
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 5
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 2
- 230000008707 rearrangement Effects 0.000 claims 1
- 239000013598 vector Substances 0.000 description 35
- 238000004458 analytical method Methods 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 13
- 239000012535 impurity Substances 0.000 description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 10
- 238000001312 dry etching Methods 0.000 description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 8
- 230000005684 electric field Effects 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- 238000005498 polishing Methods 0.000 description 6
- 238000003786 synthesis reaction Methods 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 238000004381 surface treatment Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- -1 phosphorus compound Chemical class 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- YWWDBCBWQNCYNR-UHFFFAOYSA-N trimethylphosphine Chemical compound CP(C)C YWWDBCBWQNCYNR-UHFFFAOYSA-N 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- 229910018068 Li 2 O Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000002547 anomalous effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005136 cathodoluminescence Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Natural products CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 235000015220 hamburgers Nutrition 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- WXRGABKACDFXMG-UHFFFAOYSA-N trimethylborane Chemical compound CB(C)C WXRGABKACDFXMG-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Description
A.Vescan,I.Daumiller,P.Gluche,W.Ebert,E.Kohn,"Hightemperature, high voltage operation of diamond Shottky diode",Diamond andRelated Materials,7 (1998),p.581-584 D.J.Twitchen,A.J.Whitehead,S.E.Coe,J.Isberg,J.Hammersberg,T.Wikstrom,E.Johansson,"High-VoltageSingle-Crystal Diamond Diodes",IEEE Transaction on Electron Devices,MAY2004,Vol.51,No.5,p.826
Claims (7)
- ダイヤモンドエピタキシャル層を有する本体部と、前記本体部に設けられた電極とを備えたダイヤモンド電子素子であって、
前記ダイヤモンドエピタキシャル層は、3×104cm−2以下の面密度の複合転位を有する所定のダイヤモンド領域を含み、
前記電極は、前記ダイヤモンド領域上に設けられており、
前記複合転位は、前記ダイヤモンドエピタキシャル層の所定の面に垂直な結晶方位を[001]とした場合に、X線回折面(113)のX線トポグラフィー像が検出される欠陥を含む、
ことを特徴とするダイヤモンド電子素子。 - ダイヤモンドエピタキシャル層を有する本体部と、前記本体部に設けられた電極とを備えたダイヤモンド電子素子であって、
前記ダイヤモンドエピタキシャル層は、3×10 4 cm −2 以下の面密度の複合転位を有する所定のダイヤモンド領域を含み、
前記電極は、前記ダイヤモンド領域上に設けられており、
前記複合転位は、前記ダイヤモンドエピタキシャル層の所定の面に垂直な結晶方位を[001]とした場合に、X線回折面(044)のX線トポグラフィー像が検出される欠陥を含む、
ことを特徴とするダイヤモンド電子素子。 - ダイヤモンドエピタキシャル層を有する本体部と、前記本体部に設けられた電極とを備えたダイヤモンド電子素子であって、
前記ダイヤモンドエピタキシャル層は、3×10 4 cm −2 以下の面密度の複合転位を有する所定のダイヤモンド領域を含み、
前記電極は、前記ダイヤモンド領域上に設けられており、
前記複合転位は、前記ダイヤモンドエピタキシャル層の所定の面に垂直な結晶方位を[001]とした場合に、X線回折面(220)のX線トポグラフィー像が検出される欠陥を含む、
ことを特徴とするダイヤモンド電子素子。 - ダイヤモンドエピタキシャル層を有する本体部と、前記本体部に設けられた電極とを備えたダイヤモンド電子素子であって、
前記ダイヤモンドエピタキシャル層は、3×10 4 cm −2 以下の面密度の複合転位を有する所定のダイヤモンド領域を含み、
前記電極は、前記ダイヤモンド領域上に設けられており、
前記本体部は、ダイヤモンド基板をさらに有し、
前記ダイヤモンドエピタキシャル層は、前記ダイヤモンド基板上にエピタキシャル成長されて設けられており、
前記複合転位は、前記ダイヤモンドエピタキシャル層の所定の面に垂直な結晶方位を[001]とした場合に、X線回折面(113)、(044)及び(220)のX線トポグ
ラフィー像が検出される欠陥を含み、
前記基板に含まれる複合転位は、前記X線回折面(113)及び前記X線回折面(044)のX線トポグラフィー像が検出され、且つ、前記X線回折面(220)のX線トポグラフィー像が検出されない欠陥を含む、
ことを特徴とするダイヤモンド電子素子。 - 前記複合転位は、前記ダイヤモンドエピタキシャル層をマイクロ波プラズマCVD法を用いて水素、酸素、二酸化炭素、又は一酸化炭素を加えたガスを用いてダイヤモンド結晶の表面をプラズマ処理する方法でドライエッチングした場合に、ダイヤモンド結晶の<110>方向に辺を持つ構造となっているエッチピットの発生原因となる欠陥である、ことを特徴とする請求項1〜4のいずれか一項に記載のダイヤモンド電子素子。
- 前記複合転位は、前記ダイヤモンドエピタキシャル層をマイクロ波プラズマCVD法を用いて水素、酸素、二酸化炭素、又は一酸化炭素を加えたガスを用いてダイヤモンド結晶の表面をプラズマ処理する方法でドライエッチングした場合に、ダイヤモンド結晶の<110>方向に辺を持ちL字型、コ字型、ロ字型、T字型、十字型、又は複合型の形状であるエッチピットの発生原因となる欠陥であり、
前記複合型の形状は、L字型、コ字型、ロ字型、T字型、及び十字型の複合した形状である、ことを特徴とする請求項1〜5のいずれか一項に記載のダイヤモンド電子素子。 - 前記複合転位によって生じる前記エッチピットの深さは、該エッチピットの口径の2倍以上である、
ことを特徴とする請求項5又は6に記載のダイヤモンド電子素子。
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JP5626972B2 (ja) * | 2010-07-21 | 2014-11-19 | 独立行政法人物質・材料研究機構 | 電子機械スイッチの製造方法 |
JP5759398B2 (ja) * | 2012-02-21 | 2015-08-05 | 日本電信電話株式会社 | ダイヤモンド電界効果トランジスタ及びその作成方法 |
WO2016024564A1 (ja) * | 2014-08-11 | 2016-02-18 | 住友電気工業株式会社 | ダイヤモンド複合体、基板、ダイヤモンド、ダイヤモンドを備える工具およびダイヤモンドの製造方法 |
JP6015989B2 (ja) * | 2015-10-29 | 2016-10-26 | 住友電気工業株式会社 | ダイヤモンド複合体の製造方法、ダイヤモンド単結晶の製造方法、及びダイヤモンド複合体 |
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US9034200B2 (en) * | 2007-01-22 | 2015-05-19 | Element Six Limited Technologies Limited | Plasma etching of diamond surfaces |
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Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |