JP5517918B2 - キャパシタとそれを有する半導体装置並びにそれらの製造方法 - Google Patents
キャパシタとそれを有する半導体装置並びにそれらの製造方法 Download PDFInfo
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- JP5517918B2 JP5517918B2 JP2010505833A JP2010505833A JP5517918B2 JP 5517918 B2 JP5517918 B2 JP 5517918B2 JP 2010505833 A JP2010505833 A JP 2010505833A JP 2010505833 A JP2010505833 A JP 2010505833A JP 5517918 B2 JP5517918 B2 JP 5517918B2
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- film
- capacitor
- electrode
- amorphous
- dielectric
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- 239000003990 capacitor Substances 0.000 title claims description 136
- 239000004065 semiconductor Substances 0.000 title claims description 67
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 91
- 229910052718 tin Inorganic materials 0.000 claims description 91
- 239000000203 mixture Substances 0.000 claims description 72
- 238000000137 annealing Methods 0.000 claims description 50
- 238000000034 method Methods 0.000 claims description 37
- 229910052751 metal Inorganic materials 0.000 claims description 34
- 239000002184 metal Substances 0.000 claims description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 26
- 229910052782 aluminium Inorganic materials 0.000 claims description 23
- 229910052726 zirconium Inorganic materials 0.000 claims description 22
- 239000013078 crystal Substances 0.000 claims description 19
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- 229910052721 tungsten Inorganic materials 0.000 claims description 14
- 229910052757 nitrogen Inorganic materials 0.000 claims description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 10
- 229910052697 platinum Inorganic materials 0.000 claims description 9
- 229910052741 iridium Inorganic materials 0.000 claims description 8
- 229910052707 ruthenium Inorganic materials 0.000 claims description 8
- 239000002131 composite material Substances 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 239000000470 constituent Substances 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- 239000010408 film Substances 0.000 description 284
- 230000000694 effects Effects 0.000 description 38
- 239000010410 layer Substances 0.000 description 26
- 229910021332 silicide Inorganic materials 0.000 description 23
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 19
- 239000010703 silicon Substances 0.000 description 19
- 238000005229 chemical vapour deposition Methods 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 14
- 239000010936 titanium Substances 0.000 description 13
- 239000012535 impurity Substances 0.000 description 12
- 239000002356 single layer Substances 0.000 description 12
- 239000011229 interlayer Substances 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 229910007875 ZrAlO Inorganic materials 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 238000002425 crystallisation Methods 0.000 description 9
- 230000008025 crystallization Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 229910044991 metal oxide Inorganic materials 0.000 description 9
- 150000004706 metal oxides Chemical class 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 230000006866 deterioration Effects 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 8
- 238000005121 nitriding Methods 0.000 description 8
- 238000002441 X-ray diffraction Methods 0.000 description 7
- 238000000231 atomic layer deposition Methods 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 238000005280 amorphization Methods 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000007800 oxidant agent Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 5
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 5
- 229910021334 nickel silicide Inorganic materials 0.000 description 5
- 239000012299 nitrogen atmosphere Substances 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000002484 cyclic voltammetry Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- -1 zircon aluminate Chemical class 0.000 description 2
- 206010021143 Hypoxia Diseases 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- XUIMIQQOPSSXEZ-OUBTZVSYSA-N silicon-29 atom Chemical compound [29Si] XUIMIQQOPSSXEZ-OUBTZVSYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3141—Deposition using atomic layer deposition techniques [ALD]
- H01L21/3142—Deposition using atomic layer deposition techniques [ALD] of nano-laminates, e.g. alternating layers of Al203-Hf02
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02189—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing zirconium, e.g. ZrO2
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02194—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing more than one metal element
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/312—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with a bit line higher than the capacitor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Nanotechnology (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
Description
2 素子分離領域
3 ゲート酸化膜
4 ゲート電極
5 拡散領域
6 第1層間絶縁膜
7 コンタクトホール
8 TiN膜
9 W膜
10 メモリセル選択用トランジスタ
11 容量コンタクト
12 ビットコンタクト
13 ストッパー絶縁膜
14 第2層間絶縁膜
15 シリンダ溝
16 下部電極
17 容量絶縁膜
18 上部電極(TiN膜)
19 MIM構造のキャパシタ
20 容量用配線
21 開口部
22 第3層間絶縁膜
23 コンタクトホール
24 TiN膜
25 ビット配線
26 不純物を含有した多結晶シリコン
27 タングステン
28 金属シリサイド層
29 不純物を含有した多結晶シリコン
30 金属シリサイド層
31 ニッケルシリサイド層
101 結晶化したTiN膜
102 非晶質化したTiN膜
103 下部電極
104 容量絶縁膜
105 上部電極
106 シリコン基板
107 シリコン自然酸化膜
108 容量絶縁膜
109 上部電極
201 結晶化したTiN膜
202 非晶質化したTiN膜
203 下部電極
204 容量絶縁膜
205 上部電極
301 シリコン基板
302 結晶化したTiN膜
303 非晶質化したTiN膜
304 下部電極
305 容量絶縁膜
306 上部電極
401 TiN膜
402 非晶質のTiN膜
まず、基板上に酸化剤であるH2Oを供給する。H2Oは、マスフローコントローラによって流量5sccmを2sec供給する。ここで、ccmはcc(cm3)/min、即ち1分間あたりの流量を規定する単位であり、sccmはstandard cc/min、即ち1atm、0℃で規格化されたccmである。次に、Al(CH3)4およびZr(Net2)4を同時に供給する。Al原料は、マスフローコントローラによって0.05sccmで制御し供給する。また、Zr原料は、80℃の容器により流量20sccmの窒素ガスのバブリングにより供給する。このとき、原料ガスの供給時間は20secである。
まず、基板上に酸化剤であるH2Oを供給する。H2Oは、マスフローコントローラによって流量5sccmを2sec供給する。次に、Zr(Net2)4を供給する。このとき、原料ガスの供給時間は20secである。このとき、金属酸化物層のAl組成は、上記のZrAlOとZrO2膜の成膜サイクル数の比(膜厚比)によって制御することができる。すなわち、ZrAlO膜を成膜後、ZrO2膜をNサイクル行い、これを1setとして、1setを所定のサイクル繰り返すことで所望の組成および膜厚を有するZrAlOとZrO2の積層膜を形成することができる。Al組成5%のZr(1−x)AlxOy膜を10nm形成するには、ZrAlO膜を1サイクル、ZrO2膜を7サイクル行い、この工程を1setとし、1setを10サイクル行うことで形成することができる。
Claims (18)
- 容量絶縁膜と、
前記容量絶縁膜の両側にそれぞれ形成された上部電極および下部電極とを有し、
前記容量絶縁膜は、ZrとAlとOとを主成分とする複合酸化物であって、ZrとAlとの組成比が(1−x):x(0.01≦x≦0.15)であり、かつ結晶構造を有する誘電体で構成され、
前記誘電体は、Zr (1−x) Al x O y (0.01≦x≦0.15、1≦y≦2−0.5x)の組成を有し、比誘電率が40〜70であり、
前記下部電極は、少なくとも前記容量絶縁膜と接する面が非晶質構造を有する導電体からなることを特徴とするキャパシタ。 - 前記下部電極は、多結晶膜と非晶質膜との積層構造を有し、前記非晶質膜が前記容量絶縁膜と接することを特徴とする請求項1に記載のキャパシタ。
- 前記下部電極は、窒素もしくは炭素の少なくとも一つを添加した金属の多結晶膜と非晶質膜との積層構造を有し、前記非晶質膜が前記容量絶縁膜と接することを特徴とする請求項1に記載のキャパシタ。
- 前記下部電極は、主構成元素がTa、TaN、Ti、TiNからなる群から選択される金属または金属窒化物の少なくとも一つであることを特徴とする請求項1から3のいずれかに記載のキャパシタ。
- 前記誘電体は、Zr(1−x)AlxOy(0.02≦x≦0.10、1≦y≦2−0.5x)の組成を有することを特徴とする請求項1から4のいずれかに記載のキャパシタ。
- 前記誘電体は、Zr(1−x)AlxOy(0.02≦x≦0.05、1≦y≦2−0.5x)の組成を有することを特徴とする請求項5に記載のキャパシタ。
- 前記誘電体は、Zr (1−x) Al x O y (0.01≦x≦0.08、1≦y≦2−0.5x)の組成を有することを特徴とする請求項1から4のいずれかに記載のキャパシタ。
- 前記上部電極は、TiN、Ti、W、Pt、Ir、Ruからなる群から選択される金属または金属窒化物の少なくとも一つからなることを特徴とする請求項1から7のいずれかに記載のキャパシタ。
- 前記下部電極と前記容量絶縁膜と前記上部電極とで構成される3層構造を有し、
前記3層構造は、異なる面上に形成された複数の部分を有することを特徴とする請求項1から8のいずれかに記載のキャパシタ。 - 前記3層構造は、互いに直交する複数の部分を有することを特徴とする請求項9に記載のキャパシタ。
- 少なくとも部分的に筒型構造を有することを特徴とする請求項1から10のいずれかに記載のキャパシタ。
- 請求項1から11のいずれかに記載のキャパシタと、
少なくとも表面が半導体で構成された半導体基板とを有し、
前記キャパシタが、前記半導体基板上に形成されていることを特徴とする半導体装置。 - 前記半導体基板上にスイッチング素子が形成され、
前記キャパシタと、前記スイッチング素子とが電気的に接続されていることを特徴とする請求項12に記載の半導体装置。 - 請求項1から11のいずれかに記載のキャパシタを製造する方法であって、
前記下部電極として、少なくとも前記容量絶縁膜と接する面が非晶質構造を有する導電体からなる第1の電極を形成する工程と、
前記第1の電極上に、前記容量絶縁膜として、ZrとAlとOとを主成分とする複合酸化物であって、Zr (1−x) Al x O y (0.01≦x≦0.15、1≦y≦2−0.5x)の組成を有し、比誘電率が40〜70であり、かつ結晶構造を有する誘電体膜を形成する工程と、
前記誘電体膜上に、前記上部電極として、第2の電極を形成する工程とを有することを特徴とするキャパシタの製造方法。 - 前記誘電体膜を形成する工程は、Zr (1−x) Al x O y (0.01≦x≦0.15、1≦y≦2−0.5x)の組成を有する非晶質膜を形成し、該非晶質膜をアニールすることにより結晶化する工程であることを特徴とする請求項14に記載のキャパシタの製造方法。
- 前記第1の電極を形成する工程は、多結晶膜と非晶質膜との積層構造を形成する工程であることを特徴とする請求項14又は15に記載のキャパシタの製造方法。
- 前記積層構造を形成する工程は、結晶化した膜の表面を非晶質化する工程を含むことを特徴とする請求項16に記載のキャパシタの製造方法。
- 請求項14から17のいずれかに記載のキャパシタの製造方法を用いて、
少なくとも表面が半導体で構成された半導体基板上に、前記第1の電極、前記誘電体膜、前記第2の電極を有するキャパシタを形成することを特徴とする半導体装置の製造方法。
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