JP5513185B2 - リソグラフィ装置およびデバイス製造方法 - Google Patents
リソグラフィ装置およびデバイス製造方法 Download PDFInfo
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- JP5513185B2 JP5513185B2 JP2010059515A JP2010059515A JP5513185B2 JP 5513185 B2 JP5513185 B2 JP 5513185B2 JP 2010059515 A JP2010059515 A JP 2010059515A JP 2010059515 A JP2010059515 A JP 2010059515A JP 5513185 B2 JP5513185 B2 JP 5513185B2
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- 239000007789 gas Substances 0.000 description 18
- 238000007654 immersion Methods 0.000 description 13
- 238000000034 method Methods 0.000 description 12
- 230000008859 change Effects 0.000 description 9
- 239000012528 membrane Substances 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 230000033001 locomotion Effects 0.000 description 7
- 238000000671 immersion lithography Methods 0.000 description 6
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- 239000011159 matrix material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
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- 238000003491 array Methods 0.000 description 1
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- 238000013016 damping Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
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- 238000000605 extraction Methods 0.000 description 1
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
- F16L55/00—Devices or appurtenances for use in, or in connection with, pipes or pipe systems
- F16L55/04—Devices damping pulsations or vibrations in fluids
- F16L55/045—Devices damping pulsations or vibrations in fluids specially adapted to prevent or minimise the effects of water hammer
- F16L55/05—Buffers therefor
- F16L55/052—Pneumatic reservoirs
- F16L55/053—Pneumatic reservoirs the gas in the reservoir being separated from the fluid in the pipe
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Toxicology (AREA)
- Environmental & Geological Engineering (AREA)
- Atmospheric Sciences (AREA)
- Public Health (AREA)
- Life Sciences & Earth Sciences (AREA)
- Mechanical Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Microscoopes, Condenser (AREA)
Description
[0031] −放射ビームB(たとえばUV放射またはDUV放射)を調整するように構成された照明システム(イルミネータ)ILと、
[0032] −パターニングデバイス(たとえばマスク)MAを支持するように構築され、特定のパラメータに従って該パターニングデバイスを正確に位置決めするように構成された第1のポジショナPMに接続された支持構造(たとえばマスクテーブル)MTと、
[0033] −基板(たとえばレジストコートウェーハ)Wを保持するように構築された、特定のパラメータに従って該基板を正確に位置決めするように構成された第2のポジショナPWに接続された基板テーブル(たとえばウェーハテーブル)WTと、
[0034] −パターニングデバイスMAによって放射ビームBに付与されたパターンを基板Wのターゲット部分C(たとえば1つまたは複数のダイを備えている)上に投影するように構成された投影システム(たとえば屈折型投影レンズシステム)PSと
を備えている。
Claims (13)
- パターニングデバイスから基板上にパターンを投影するリソグラフィ装置であって、前記リソグラフィ装置は、オブジェクトの温度を調整流体により調整する調整システムを備え、該オブジェクトは、基板テーブル、マスクテーブルまたは前記基板テーブルのキャリヤのいずれかであり、
前記調整システムは、前記調整流体を循環するように構成された、前記オブジェクト内の局部ループを備えるリソグラフィ装置。 - 前記オブジェクトは、該オブジェクト内に調整流体を輸送するための一又は複数の調整流路を備える請求項1に記載の装置。
- 前記調整システムは、前記調整流体を前記オブジェクトに輸送する調整流体供給デバイスを備える、請求項1又は請求項2のいずれか一項に記載の装置。
- 前記調整システムは、前記調整流体を前記オブジェクトから運び去るように構成された調整流体除去デバイスを備える、請求項1乃至請求項3のいずれか一項に記載の装置。
- 前記調整システムは、前記調整流体を前記オブジェクトの外側から前記オブジェクトに加えるためのコンジットと、前記調整流体を前記オブジェクトから前記オブジェクトの外側へ除去するためのコンジットとをさらに備える、請求項1乃至請求項4のいずれか一項に記載の装置。
- 前記調整システム内の調整流体の流路に少なくとも一つの流量制限部をさらに備える請求項1乃至請求項5のいずれか一項に記載の装置。
- 前記流量制限部は、前記オブジェクト内の前記流路の一部にある、請求項6に記載の装置。
- 前記流量制限部は、前記流路内の、調整流体が前記オブジェクトに流入し、かつ/または前記オブジェクトから流出する位置に配置され、あるいはそれらの位置に隣接して配置される、請求項6又は請求項7のいずれか一項に記載の装置。
- 前記流量制限部は、前記流路の、調整流体が使用中に実質的に前記オブジェクトに向かって流れる部分に配置される、請求項6乃至請求項8のいずれか一項に記載の装置。
- 調整流体をポンプ供給するためのポンプをさらに備え、前記ポンプは、前記流路の、調整流体が使用中に実質的に前記オブジェクトから流れ去る部分に配置された、請求項6乃至請求項9のいずれか一項に記載の装置。
- 前記調整流体をポンプ供給するためのさらなるポンプをさらに備え、前記さらなるポンプは、前記流路の、調整流体が使用中に実質的に前記オブジェクトに向かって流れる部分に配置された、請求項6乃至請求項10のいずれか一項に記載の装置。
- 前記調整システムと流体連絡する圧力ダンパをさらに備え、該圧力ダンパは、前記調整システム内の、前記オブジェクトの加速に起因する前記オブジェクトの外部の前記調整流体の圧力変化を抑制する、請求項1乃至11のいずれか一項に記載の装置。
- パターン化された放射のビームを基板のターゲット部分上に投射することと、
基板テーブル、マスクテーブルまたは前記基板テーブルのキャリヤのいずれかであるオブジェクトの温度を、調整流体により調整するために調整システムを使用することと、を備え、
前記調整システムは、前記調整流体を循環するように構成された、前記オブジェクト内の局部ループを備える、デバイス製造方法。
Applications Claiming Priority (2)
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US78960406P | 2006-04-06 | 2006-04-06 | |
US60/789,604 | 2006-04-06 |
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JP2007090110A Division JP5111918B2 (ja) | 2006-04-06 | 2007-03-30 | リソグラフィ装置およびデバイス製造方法 |
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JP2010147506A JP2010147506A (ja) | 2010-07-01 |
JP5513185B2 true JP5513185B2 (ja) | 2014-06-04 |
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JP2007090110A Active JP5111918B2 (ja) | 2006-04-06 | 2007-03-30 | リソグラフィ装置およびデバイス製造方法 |
JP2010059515A Active JP5513185B2 (ja) | 2006-04-06 | 2010-03-16 | リソグラフィ装置およびデバイス製造方法 |
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Country Status (7)
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US (1) | US8913228B2 (ja) |
EP (1) | EP1843206B1 (ja) |
JP (2) | JP5111918B2 (ja) |
KR (1) | KR100885971B1 (ja) |
CN (2) | CN102495539B (ja) |
SG (1) | SG136117A1 (ja) |
TW (2) | TWI461854B (ja) |
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CN102057332B (zh) * | 2008-06-10 | 2014-04-09 | Asml荷兰有限公司 | 用于热调节光学元件的方法和*** |
JP5001343B2 (ja) | 2008-12-11 | 2012-08-15 | エーエスエムエル ネザーランズ ビー.ブイ. | 流体抽出システム、液浸リソグラフィ装置、及び液浸リソグラフィ装置で使用される液浸液の圧力変動を低減する方法 |
EP2515170B1 (en) | 2011-04-20 | 2020-02-19 | ASML Netherlands BV | Thermal conditioning system for thermal conditioning a part of a lithographic apparatus and a thermal conditioning method |
JP6304905B2 (ja) * | 2013-12-20 | 2018-04-04 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィにおけるオブジェクトを位置決めするシステム |
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US7288864B2 (en) * | 2004-03-31 | 2007-10-30 | Nikon Corporation | System and method for cooling motors of a lithographic tool |
US7545478B2 (en) * | 2004-05-05 | 2009-06-09 | Asml Netherlands B.V. | Lithographic apparatus, thermal conditioning system, and method for manufacturing a device |
US8749762B2 (en) * | 2004-05-11 | 2014-06-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7486381B2 (en) * | 2004-05-21 | 2009-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
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2007
- 2007-03-28 EP EP20070251323 patent/EP1843206B1/en not_active Expired - Fee Related
- 2007-03-30 JP JP2007090110A patent/JP5111918B2/ja active Active
- 2007-04-03 US US11/730,749 patent/US8913228B2/en active Active
- 2007-04-04 TW TW096112190A patent/TWI461854B/zh active
- 2007-04-04 TW TW101102632A patent/TWI528118B/zh active
- 2007-04-05 SG SG200702551-3A patent/SG136117A1/en unknown
- 2007-04-06 CN CN201210010399.2A patent/CN102495539B/zh active Active
- 2007-04-06 KR KR1020070034217A patent/KR100885971B1/ko active IP Right Grant
- 2007-04-06 CN CN 200710092076 patent/CN101051188B/zh active Active
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Publication number | Publication date |
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KR100885971B1 (ko) | 2009-02-26 |
JP5111918B2 (ja) | 2013-01-09 |
EP1843206A3 (en) | 2008-11-26 |
TWI528118B (zh) | 2016-04-01 |
CN101051188A (zh) | 2007-10-10 |
SG136117A1 (en) | 2007-10-29 |
CN102495539A (zh) | 2012-06-13 |
TWI461854B (zh) | 2014-11-21 |
US8913228B2 (en) | 2014-12-16 |
US20070242245A1 (en) | 2007-10-18 |
EP1843206B1 (en) | 2012-09-05 |
TW200801840A (en) | 2008-01-01 |
CN101051188B (zh) | 2012-03-21 |
JP2007281462A (ja) | 2007-10-25 |
TW201222172A (en) | 2012-06-01 |
KR20070100171A (ko) | 2007-10-10 |
JP2010147506A (ja) | 2010-07-01 |
CN102495539B (zh) | 2015-04-15 |
EP1843206A2 (en) | 2007-10-10 |
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