JP5511216B2 - アレイ基板およびその製造方法 - Google Patents
アレイ基板およびその製造方法 Download PDFInfo
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- JP5511216B2 JP5511216B2 JP2009105489A JP2009105489A JP5511216B2 JP 5511216 B2 JP5511216 B2 JP 5511216B2 JP 2009105489 A JP2009105489 A JP 2009105489A JP 2009105489 A JP2009105489 A JP 2009105489A JP 5511216 B2 JP5511216 B2 JP 5511216B2
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- 239000000758 substrate Substances 0.000 title claims description 89
- 238000004519 manufacturing process Methods 0.000 title claims description 38
- 239000010409 thin film Substances 0.000 claims description 77
- 239000010408 film Substances 0.000 claims description 57
- 238000000034 method Methods 0.000 claims description 46
- 230000001681 protective effect Effects 0.000 claims description 46
- 239000010410 layer Substances 0.000 claims description 29
- 239000011241 protective layer Substances 0.000 claims description 15
- 238000000206 photolithography Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000005192 partition Methods 0.000 claims description 8
- 206010034972 Photosensitivity reaction Diseases 0.000 claims description 7
- 230000036211 photosensitivity Effects 0.000 claims description 7
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 239000000049 pigment Substances 0.000 claims description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 15
- 238000003860 storage Methods 0.000 description 14
- 239000003990 capacitor Substances 0.000 description 9
- 230000000903 blocking effect Effects 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 239000012535 impurity Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 101150022676 CSTB gene Proteins 0.000 description 4
- 101150084890 cstA gene Proteins 0.000 description 4
- 239000011368 organic material Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 206010047571 Visual impairment Diseases 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
- G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nonlinear Science (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Ceramic Engineering (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
9 間隙
11 配向膜
100 アレイ基板
121 ゲート線
124a 第1ゲート電極
124b 第2ゲート電極
131、135 維持電極線
154a、154b 半導体
163a、165a、165b オーミックコンタクト部材
171a、171b データ線
191 画素電極
191a 第1副画素電極
191b 第2副画素電極
200 対向基板
220 遮光部材
230R、230G、230B カラーフィルタ
320 間隔保持部材
PX 画素
PXa、PXb 副画素
Qa、Qb スイッチング素子 、
Clca、Clcb 液晶キャパシタ
Csta、Cstb ストレージキャパシタ
Claims (10)
- 基板と、
前記基板上に形成され、絶縁されて交差するゲート線およびデータ線と、
前記ゲート線および前記データ線に接続される薄膜トランジスタと、
前記薄膜トランジスタ上に形成された下部保護膜と、
前記下部保護膜上に接して形成された第1カラーフィルタと、
前記下部保護膜上に接して形成された遮光部材と、
前記遮光部材の一部を突出させることで形成される間隔保持部材と、
前記遮光部材を隔壁として前記下部保護膜上に接して形成された第2カラーフィルタと、を有し、
前記第1カラーフィルタの一部の上に前記遮光部材の一部が重畳し、前記遮光部材の一部の上に前記第2カラーフィルタの一部が重畳することを特徴とする、
薄膜トランジスタ基板。 - 前記第1カラーフィルタはフォトリソグラフィ工程で形成され、前記間隔保持部材は前記第1カラーフィルタの少なくとも一部の上に配置され、
前記遮光部材、前記第1カラーフィルタおよび前記第2カラーフィルタの上に形成される保護膜と、
前記保護膜の上に形成され、前記薄膜トランジスタと接続される画素電極とをさらに有し、
前記画素電極は、前記保護膜および前記下部保護膜を貫通する第1コンタクトホールを通して前記薄膜トランジスタと接続する第1画素電極と、前記第1カラーフィルタ、前記保護膜および前記下部保護膜を貫通する第2コンタクトホールを通して前記薄膜トランジスタと接続する第2画素電極とを有し、
前記遮光部材は、前記ゲート線および前記データ線に沿って形成される第1部分と、前記第1コンタクトホールを取り囲む第2部分とを有し、
前記第2部分は四角環状であり、前記四角環状によって取り囲まれた部分にはカラーフィルタが形成されていないことを特徴とする、請求項1に記載の薄膜トランジスタ基板。 - 前記遮光部材、前記第1カラーフィルタおよび前記第2カラーフィルタの上に形成されている保護膜と、
前記保護膜上に形成され、前記薄膜トランジスタと接続される画素電極とをさらに有し、
前記画素電極は、前記保護膜および前記下部保護膜を貫通する第1コンタクトホールを通して前記薄膜トランジスタと接続される第1画素電極と、前記第1カラーフィルタ、前記保護膜および前記下部保護膜を貫通する第2コンタクトホールを通して前記薄膜トランジスタと接続される第2画素電極とを有し、
前記遮光部材は、前記ゲート線および前記データ線に沿って形成される第1部分と、前記第1コンタクトホールを取り囲む第2部分とを有することを特徴とする、請求項1に記載の薄膜トランジスタ基板。 - 基板と、
前記基板上に形成され、絶縁されて交差するゲート線およびデータ線と、
前記ゲート線および前記データ線と接続される薄膜トランジスタと、
前記薄膜トランジスタ上に形成された下部保護膜と、
前記下部保護膜上に接して形成された遮光部材と、
前記下部保護膜上に接して形成され、第1グループ及び第2グループを含むカラーフィルタと、
前記第1グループの上に配置される間隔保持部材と、を有し、
前記第1グループの一部の上に前記遮光部材の一部が重畳し、前記遮光部材の一部の上に前記第2グループの一部が重畳し、
前記第2グループは、前記遮光部材によって区画された領域を充填することによって形成され、
前記間隔保持部材は前記遮光部材の一部が突出するように形成されることを特徴とする、
薄膜トランジスタ基板。 - 前記カラーフィルタの第1グループはフォトリソグラフィ工程で形成されることを特徴とする、請求項4に記載の薄膜トランジスタ基板。
- 基板上に薄膜トランジスタを形成することと、
前記薄膜トランジスタおよび前記基板上に下部保護膜を形成することと、
前記下部保護膜上にフォトリソグラフィ工程で第1カラーフィルタを形成することと、
前記下部保護膜および前記第1カラーフィルタの一部の上に遮光部材および間隔保持部材を形成することと、
前記遮光部材を隔壁とし、インクジェット方式で第2カラーフィルタを形成することとを含み、
前記遮光部材と前記間隔保持部材とを同時に形成することを特徴とする、薄膜トランジスタ基板の製造方法。 - 前記遮光部材と前記間隔保持部材を形成することは、
前記下部保護膜および前記第1カラーフィルタの上に黒色顔料を分散させた感光性レジストを塗布することと、
前記感光性レジストをフォトマスクを利用して露光および現像することと、を含み、
前記フォトマスクは、透明領域、半透明領域および遮光領域を有することを特徴とする、請求項6に記載の薄膜トランジスタ基板の製造方法。 - 前記感光性レジストは負の感光性を有し、
前記露光する工程において、前記フォトマスクの前記透明領域は前記間隔保持部材が配置される領域に対応し、前記半透明領域は前記遮光部材が形成される部分に対応し、前記遮光領域はそれ以外の領域に対応することを特徴とする、請求項7に記載の薄膜トランジスタ基板の製造方法。 - 前記感光性レジストは正の感光性を有し、
前記露光する工程において、前記フォトマスクの前記遮光領域は前記間隔保持部材が配置される領域に対応し、前記半透明領域は前記遮光部材が形成される部分に対応し、前記透明領域はそれ以外の領域に対応することを特徴とする、請求項7に記載の薄膜トランジスタ基板の製造方法。 - 前記薄膜トランジスタを形成することは、
ゲート電極を有するゲート線を形成することと、
前記ゲート線上にゲート絶縁膜を形成することと、
前記ゲート絶縁膜上に半導体およびオーミックコンタクト層を形成することと、
前記オーミックコンタクト層上にソース電極を有するデータ線およびドレイン電極を形成することと、を含み、
前記遮光部材、前記第1カラーフィルタおよび前記第2カラーフィルタの上に上部保護膜を形成することと、
前記上部保護膜上にコンタクトホールを通して前記ドレイン電極と接続される画素電極を形成することとをさらに含み、
前記遮光部材は、前記ゲート線および前記データ線に沿って形成される第1部分と、前記コンタクトホールを取り囲む第2部分とを有し、
前記第2部分は四角環状であり、前記四角環状によって取り囲まれた部分には前記第2カラーフィルタが形成されていないことを特徴とする、請求項6に記載の薄膜トランジスタ基板の製造方法。
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Application Number | Priority Date | Filing Date | Title |
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KR1020080113252A KR101525801B1 (ko) | 2008-11-14 | 2008-11-14 | 어레이 기판 및 그 제조 방법 |
KR10-2008-0113252 | 2008-11-14 |
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JP2010117698A JP2010117698A (ja) | 2010-05-27 |
JP2010117698A5 JP2010117698A5 (ja) | 2012-05-17 |
JP5511216B2 true JP5511216B2 (ja) | 2014-06-04 |
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US (2) | US8841668B2 (ja) |
JP (1) | JP5511216B2 (ja) |
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KR101830274B1 (ko) * | 2011-01-28 | 2018-02-21 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
KR101792797B1 (ko) * | 2011-04-04 | 2017-11-02 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
KR101853033B1 (ko) * | 2011-07-11 | 2018-04-30 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
CN102629664B (zh) * | 2012-01-04 | 2015-01-07 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法和显示装置 |
KR101971594B1 (ko) * | 2012-02-16 | 2019-04-24 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
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US20140349426A1 (en) | 2014-11-27 |
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