JP5506170B2 - 実装構造体および電子機器 - Google Patents
実装構造体および電子機器 Download PDFInfo
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- JP5506170B2 JP5506170B2 JP2008206079A JP2008206079A JP5506170B2 JP 5506170 B2 JP5506170 B2 JP 5506170B2 JP 2008206079 A JP2008206079 A JP 2008206079A JP 2008206079 A JP2008206079 A JP 2008206079A JP 5506170 B2 JP5506170 B2 JP 5506170B2
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Description
一方の主面に複数の電極が形成された、電子部品と、実装面に複数の電極が形成された回路基板とを備え、前記電子部品の複数の電極が前記回路基板の複数の電極にそれぞれ接合された実装構造体であって、
前記一方の主面に対向する前記電子部品の他方の主面に、接着力および熱伝導率の異なる第1層と第2層とで構成された第1の絶縁性樹脂層が形成され、かつ
前記第1の絶縁性樹脂層の前記他方の主面と接する部分には、前記第2層より接着力が高い前記第1層が配置され、
前記第1の絶縁性樹脂層の前記他方の主面と接しない部分には、前記第1層より熱伝導率が高い前記第2層が配置され、
前記一方の主面と前記回路基板との間に、接着力および熱伝導率の異なる第3層と第4層とで構成された第2の絶縁性樹脂層が形成され、
前記第2の絶縁性樹脂層の前記一方の主面と接する部分には、前記第4層より接着力が高い前記第3層が配置され、
前記第2の絶縁性樹脂層の前記一方の主面と接しない部分には、前記第3層より熱伝導率が高い前記第4層が配置され、
前記第1層が、前記電子部品の側面、および、前記第2の絶縁性樹脂層の側面を覆っていることを特徴とする。
前記電子部品と接する部分には、前記第2層より接着強度が高い前記第1層が配置され、
前記電子部品と接しない部分には、前記第1層より熱伝導率が高い前記第2層が配置されている。
図1(a)に本発明の実施の形態1にかかる実装構造体の断面を示す。本実施の形態にかかる実装構造体100aは、半導体チップ1と回路基板2で構成されている。半導体チップ1は従来の実装構造体200と同様に、ベアIC11およびインターポーザ基板12で構成され、更にインターポーザ基板12のベアIC11と対向する面に、端子電極であるはんだボール13が形成されている。半導体チップ1は、はんだボール13と回路基板2のランド(電極)21がはんだ3で接合されることにより、回路基板2上に実装される。
図3(a)に本発明の実施の形態2にかかる実装構造体100cの断面を示す。また図3(b)に、図3(a)の実装構造体100cをb−b線に沿って切断した断面の一部を示す。図3(b)は、図1(b)と同様に、フィラーの混入状態を分かりやすく説明するため、フィラーの形状を誇張して模式的に表示している。
図4(a)に本発明の実施の形態3にかかる実装構造体100dの断面を示す。また図4(b)には、図4(a)の実装構造体100dをb−b線に沿って切断した断面の一部を示し、図4(c)には、図4(a)の実装構造体100dをc−c線に沿って切断した断面の一部を示す。なお図4(b)、(c)は、図1(b)と同様に、フィラーの混入状態を分かりやすく説明するため、フィラーの形状を誇張して模式的に表示している。
次に、本発明で用いられる熱硬化性樹脂組成物について具体的に説明する。使用可能な熱硬化性樹脂組成物として、エポキシ樹脂組成物やフェノール樹脂組成物あるいはアクリル樹脂組成物が挙げられる。吸湿性、熱膨張性、硬化収縮性などの点を考慮すると、エポキシ樹脂組成物が適している。
<熱伝導率と接着強度の測定>
絶縁性樹脂層を構成する、熱硬化性樹脂組成物に絶縁性フィラーが混入した樹脂組成物は、下記の(A)〜(D)の各成分に硬化促進剤を混合して作成する。
(A)成分(熱硬化性樹脂組成物):エポキシ樹脂、具体的にはビスフェノールA型エポキシ樹脂(ジャパンエポキシレジン株式会社、エピコート828、比重1.17、100重量部)、
(B)成分(硬化剤):ジシアンジアミド(味の素ファインテクノ株式会社、アミキュアAH-154、8重量部)、
(C)成分(絶縁性フィラー):形状の異なるアルミナフィラー、具体的には、40μ径のアルミナ球状フィラー、もしくは5μ厚みのリン片状アルミナフィラー、
(D)成分(反応性希釈剤:架橋調整剤):アルキルグリシジルエーテル(ジャパンエポキシレジン株式会社、YED216M、10重量部)、
硬化促進剤:味の素ファインテクノ株式会社、アミキュアPN−23、比重1.21、1重量部。
実施例1として、図1に示したのと同様の3層構造(各層の厚さは1mm)の絶縁性樹脂層を作成した。第1層の球状フィラーの含有率は60%である。第2層にはリン片状フィラーだけを混入し、その含有率は60%である。このようにして作成した絶縁性樹脂層の熱伝導率を測定した。熱伝導率は、単位長さあたり1℃の温度差があるとき、単位時間に単位面積を移動する熱量で定義され、ここでは、一般的な測定方法であるレーザフラッシュ方により測定を行った。
絶縁性樹脂層の第2層に、実施例の第1層に用いたのと同一の熱硬化性組成物および球状フィラーを用い、かつ第1層と第2層のフィラーの含有量を同一にした。このような絶縁性樹脂層について、実施例と同様の方法で熱伝導率および接着強度を測定した。フィラーの含有量および測定結果を表1に示す。いずれの比較例においても、接着強度は6kg以上となっているが、熱伝導率は1w/m・kを超えなかった。すなわち、比較例1〜4の絶縁性樹脂層は、熱伝導率について要求される条件を充足できなかった。
比較例1〜4で用いたのと同一の球状フィラーを用いて絶縁性樹脂層の第1層と第2層を形成したが、フィラーの含有量を比較例1〜4よりも高くした。実施例と同様の方法で測定した絶縁性樹脂層の熱伝導率と接着強度を表1に示す。熱伝導率は1w/m・k以上と良好な値を示しているが、接着強度は3kgまで低下している。従って、比較例5の絶縁性樹脂層は、接着強度について要求される条件を充足できなかった。
比較例1〜4で用いたのと同一の球状フィラーを用いて絶縁性樹脂層の第1層と第2層を形成したが、第1層のフィラーの含有量を50wt%とした。実施例と同様の方法で測定した絶縁性樹脂層の熱伝導率と接着強度を表1に示す。第1層のフィラー含有量が60wt%を下回ると、第2層のフィラー含有量が90wt%と高い値でも、1w/m・k以上の熱伝導率が得られない。従って、比較例6の絶縁性樹脂層は、熱伝導率について要求される条件を充足できなかった。
絶縁性樹脂層の第2層に、第1層と同一の形状である球状フィラーに加えて、フィラー間の接触面積が大きくなることが期待できるリン片状フィラーを5wt%加えた。実施例と同様の方法で測定した絶縁性樹脂層の熱伝導率および接着強度を表1に示す。実施例9〜11に示すようにリン片状フィラーの含有量は10wt%以上である必要であり、5wt%以下では熱伝導率を向上させることができない。
次に、上述の測定で優れた放熱性を示した各実施例の絶縁性樹脂層(図1参照)が、半導体素子や電子部品が実装された状態で高い接着強度を維持できるかどうか、温度サイクル試験により調べた。
2 回路基板
3 はんだ
1 半導体チップ
5、8、9 絶縁性樹脂層
10 型
12 インターポーザ基板
13 はんだボール
21 ランド
50 熱硬化性樹脂組成物
51 粒状フィラー
52 リン片状フィラー
100a〜100e 実装構造体
Claims (4)
- 一方の主面に複数の電極が形成された、電子部品と、実装面に複数の電極が形成された回路基板とを備え、前記電子部品の複数の電極が前記回路基板の複数の電極にそれぞれ接合された実装構造体であって、
前記一方の主面に対向する前記電子部品の他方の主面に、接着力および熱伝導率の異なる第1層と第2層とで構成された第1の絶縁性樹脂層が形成され、かつ
前記第1の絶縁性樹脂層の前記他方の主面と接する部分には、前記第2層より接着力が高い前記第1層が配置され、
前記第1の絶縁性樹脂層の前記他方の主面と接しない部分には、前記第1層より熱伝導率が高い前記第2層が配置され、
前記一方の主面と前記回路基板との間に、接着力および熱伝導率の異なる第3層と第4層とで構成された第2の絶縁性樹脂層が形成され、
前記第2の絶縁性樹脂層の前記一方の主面と接する部分には、前記第4層より接着力が高い前記第3層が配置され、
前記第2の絶縁性樹脂層の前記一方の主面と接しない部分には、前記第3層より熱伝導率が高い前記第4層が配置され、
前記第1層が、前記電子部品の側面、および、前記第2の絶縁性樹脂層の側面を覆っており、
前記第1層および前記第3層は、熱硬化性樹脂を主成分とし、これに球状のフィラーが混入されており、
前記第2層および第4層は、熱硬化性樹脂を主成分とし、これに球状のフィラーとリン片状のフィラーとが混入されていることを特徴とする実装構造体。 - 前記第2層が、さらに、前記第1層を覆うように形成されていることを特徴とする、請求項1記載の実装構造体。
- 前記第1の絶縁性樹脂層が複数の層で形成され、前記電子部品の他方の主面と接しない層の熱伝導率が一番高く、前記電子部品の他方の主面に近づくに従って熱伝導率が低下することを特徴とする、請求項1記載の実装構造体。
- 電子部品の他方の主面上に前記第1の絶縁性樹脂層が形成された請求項1記載の実装構造体が内蔵され、かつ前記第1の絶縁性樹脂層が、放熱シートまたは高熱伝導性接着剤を介して筐体に当接していることを特徴とする電子機器。
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CN103025122A (zh) * | 2011-09-23 | 2013-04-03 | 联想(北京)有限公司 | 一种电子设备 |
CN104206036B (zh) * | 2012-04-10 | 2017-05-03 | 松下知识产权经营株式会社 | 电极接合方法、电极接合结构体的制造方法以及电极接合结构体的制造*** |
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JPH04155853A (ja) | 1990-10-19 | 1992-05-28 | Hitachi Ltd | 半導体集積回路装置 |
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JP2756075B2 (ja) * | 1993-08-06 | 1998-05-25 | 三菱電機株式会社 | 金属ベース基板およびそれを用いた電子機器 |
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US6245400B1 (en) * | 1998-10-07 | 2001-06-12 | Ucar Graph-Tech Inc. | Flexible graphite with non-carrier pressure sensitive adhesive backing and release liner |
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US6570099B1 (en) * | 1999-11-09 | 2003-05-27 | Matsushita Electric Industrial Co., Ltd. | Thermal conductive substrate and the method for manufacturing the same |
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US7229683B2 (en) * | 2003-05-30 | 2007-06-12 | 3M Innovative Properties Company | Thermal interface materials and method of making thermal interface materials |
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