JP5499175B2 - 干渉反射体を備えた干渉表示装置 - Google Patents
干渉反射体を備えた干渉表示装置 Download PDFInfo
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- JP5499175B2 JP5499175B2 JP2012530998A JP2012530998A JP5499175B2 JP 5499175 B2 JP5499175 B2 JP 5499175B2 JP 2012530998 A JP2012530998 A JP 2012530998A JP 2012530998 A JP2012530998 A JP 2012530998A JP 5499175 B2 JP5499175 B2 JP 5499175B2
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/001—Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
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- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
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Description
14a、14b 可動反射層
16a、16b 光学積層体
18 ポスト
19 ギャップ
20 基板
21 プロセッサ
22 アレイドライバ
24 行駆動回路
26 列駆動回路
27 ネットワークインターフェース
28 フレームバッファ
29 ドライバコントローラ
30 表示部
32 紐状構造
34 変形可能な層
40 表示装置
41 筐体
42 支持柱プラグ
43 アンテナ
44 バス構造
45 スピーカー
46 マイク
47 送受信部
48 入力装置
50 電源部
52 調整用ハードウェア
800 干渉表示装置
801 基板
803 吸収層
805 透明層
807 空隙
809 反射層
811 干渉変調器(IMOD)
813 干渉反射体
815 上面反射層
817 光学共振層
819 下面反射層
903、905、1001、1005、1015、1101、1105、1203、1207、1301、1305、1401、1405 反射率曲線
907 反射率の凹み
909 透過率ピーク
1003、1013、1103、1107、1205、1209、1303、1403 透過率曲線
Claims (21)
- 光を部分的に吸収し、部分的に反射し、部分的に透過する吸収層と、
前記吸収層に対して略垂直な方向に移動するように構成された干渉反射体であって、前記干渉反射体が前記吸収層と前記干渉反射体との間の少なくとも一部に位置する空気からなる可変な空隙を通して移動し、部分的に反射性かつ部分的に透過性の第一の層と、前記部分的に反射性かつ部分的に透過性の第一の層に対して相対的に固定された部分的に反射性かつ部分的に反射性の第二の層と、前記部分的に反射性かつ部分的に透過性の第一の層と前記部分的に反射性かつ部分的に反射性の第二の層との間に配置された第一の干渉キャビティと、を含み、干渉変調装置が透過ピーク波長において光の反射率が減少するように、前記透過ピーク波長において光の特定のスペクトルを透過するように構成された干渉反射体と、
前記吸収層と前記干渉反射体との間に配置された第二の干渉キャビティと、を備えた、干渉変調装置。 - 前記第一の干渉キャビティが透明な絶縁体を含む、請求項1に記載の干渉変調装置。
- 前記干渉反射体が可視光の範囲内の透過ピーク波長において光の特定のスペクトルを透過するように調整された、請求項1に記載の干渉変調装置。
- 前記干渉反射体が約380nmから約750nmの間の二つ以上の透過ピーク波長において二つ以上の光のスペクトルを透過するように調整された、請求項1に記載の干渉変調装置。
- 前記吸収層がモリブデン、チタン、タングステン、クロム、モリブデンクロム合金、セレン化鉛、及びそれらの組み合わせからなる群から選択された材料を含む、請求項1に記載の干渉変調装置。
- 前記反射性の第一の層がアルミニウム、金、銀、モリブデン、クロム、銅、ニッケル及びそれらの組み合わせからなる群から選択された材料を含む、請求項1に記載の干渉変調装置。
- 前記部分的に反射性かつ部分的に透過性の第一の層及び前記部分的に反射性かつ部分的に透過性の第二の層が同一の材料を含む、請求項6に記載の干渉変調装置。
- 前記部分的に反射性かつ部分的に透過性の第一の層が約1nmから約50nmの間の厚さを有する、請求項1に記載の干渉変調装置。
- 前記部分的に反射性かつ部分的に透過性の第二の層が約5nmから約200nmの間の厚さを有する、請求項1に記載の干渉変調装置。
- 前記第一の干渉キャビティが約200nmから約3000nmの間の厚さを有する、請求項1に記載の干渉変調装置。
- 表示装置と、
前記表示装置と通信するように構成されたプロセッサであって、画像データを処理するように構成されたプロセッサと、
前記プロセッサと通信するように構成されたメモリ装置と、をさらに備えた、請求項1に記載の干渉変調装置。 - 前記表示装置に少なくとも一つの信号を送信するように構成された駆動回路をさらに備える、請求項11に記載の干渉変調装置。
- 前記駆動回路に前記画像データの少なくとも一部を送信するように構成された制御部をさらに備える、請求項12に記載の干渉変調装置。
- 前記プロセッサに前記画像データを送信するように構成された画像供給モジュールをさらに備える、請求項11に記載の干渉変調装置。
- 前記画像供給モジュールが受信部、送信部及び送受信部のうち少なくとも一つを含む、請求項14に記載の干渉変調装置。
- 入力データを受信し、前記入力データを前記プロセッサと通信するように構成された入力装置をさらに備える、請求項11に記載の干渉変調装置。
- 光を部分的に吸収し、部分的に反射し、部分的に透過する吸収手段と、
前記吸収手段に対して略垂直な方向に移動するように構成された、光を反射する手段であって、前記吸収手段と前記反射手段との間の少なくとも一部に位置する空気からなる可変な空隙を通して移動し、光を部分的に反射し部分的に透過する第一の手段と、前記部分的に反射し部分的に透過する第一の手段に対して相対的に固定されて光を部分的に反射し部分的に透過する第二の手段と、前記部分的に反射し部分的に透過する第一の手段と前記部分的に反射し部分的に透過する第二の手段との間に配置された第一の干渉キャビティと、を含み、干渉変調装置が透過ピーク波長において光の反射率が減少するように、前記透過ピーク波長において光の特定のスペクトルを透過するように構成された、光を反射する手段と、
前記吸収手段と前記反射手段との間に配置された第二の干渉キャビティと、を備える干渉変調装置。 - 前記吸収手段が光を部分的に吸収し、部分的に反射し、部分的に透過する吸収層を含む、請求項17に記載の干渉変調装置。
- 前記部分的に反射し部分的に透過する第一の手段が部分的に反射性かつ部分的に透過性の第一の層を含む、請求項17に記載の干渉変調装置。
- 前記部分的に反射し部分的に透過する第二の手段が部分的に反射性かつ部分的に透過性の第二の層を含む、請求項17に記載の干渉変調装置。
- 光を部分的に吸収し、部分的に反射し、部分的に透過する吸収層を提供する段階と、
部分的に反射性かつ部分的に透過性の第一の層と、前記部分的に反射性かつ部分的に透過性の第一の層に対して相対的に固定された部分的に反射性かつ部分的に透過性の第二の層と、前記部分的に反射性かつ部分的に透過性の第一の層と前記部分的に反射性かつ部分的に透過性の第二の層との間に配置された第一の干渉キャビティと、を含み、干渉変調装置が透過ピーク波長において反射率が減少するように、前記透過ピーク波長において光の特定のスペクトルを透過するように構成された干渉反射体を提供する段階と、
前記干渉反射体の少なくとも一部と前記吸収層の少なくとも一部との間に第二の干渉キャビティを設けるように前記干渉反射体を前記吸収層に対して位置させる段階と、を備える干渉変調装置の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/568,472 US8488228B2 (en) | 2009-09-28 | 2009-09-28 | Interferometric display with interferometric reflector |
US12/568,472 | 2009-09-28 | ||
PCT/US2010/049851 WO2011038020A1 (en) | 2009-09-28 | 2010-09-22 | Interferometric display with interferometric reflector |
Publications (2)
Publication Number | Publication Date |
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JP2013506160A JP2013506160A (ja) | 2013-02-21 |
JP5499175B2 true JP5499175B2 (ja) | 2014-05-21 |
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Application Number | Title | Priority Date | Filing Date |
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JP2012530998A Expired - Fee Related JP5499175B2 (ja) | 2009-09-28 | 2010-09-22 | 干渉反射体を備えた干渉表示装置 |
Country Status (6)
Country | Link |
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US (2) | US8488228B2 (ja) |
EP (1) | EP2483733A1 (ja) |
JP (1) | JP5499175B2 (ja) |
KR (1) | KR20120081169A (ja) |
CN (1) | CN102576150A (ja) |
WO (1) | WO2011038020A1 (ja) |
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-
2009
- 2009-09-28 US US12/568,472 patent/US8488228B2/en not_active Expired - Fee Related
-
2010
- 2010-09-22 WO PCT/US2010/049851 patent/WO2011038020A1/en active Application Filing
- 2010-09-22 KR KR1020127010854A patent/KR20120081169A/ko not_active Application Discontinuation
- 2010-09-22 CN CN2010800424579A patent/CN102576150A/zh active Pending
- 2010-09-22 EP EP10763089A patent/EP2483733A1/en not_active Withdrawn
- 2010-09-22 JP JP2012530998A patent/JP5499175B2/ja not_active Expired - Fee Related
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2013
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US8488228B2 (en) | 2013-07-16 |
US20130301111A1 (en) | 2013-11-14 |
KR20120081169A (ko) | 2012-07-18 |
US20110075241A1 (en) | 2011-03-31 |
CN102576150A (zh) | 2012-07-11 |
JP2013506160A (ja) | 2013-02-21 |
EP2483733A1 (en) | 2012-08-08 |
WO2011038020A1 (en) | 2011-03-31 |
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