JP5493140B2 - ホットワイヤー法による基材表面の窒化方法 - Google Patents
ホットワイヤー法による基材表面の窒化方法 Download PDFInfo
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- JP5493140B2 JP5493140B2 JP2008212634A JP2008212634A JP5493140B2 JP 5493140 B2 JP5493140 B2 JP 5493140B2 JP 2008212634 A JP2008212634 A JP 2008212634A JP 2008212634 A JP2008212634 A JP 2008212634A JP 5493140 B2 JP5493140 B2 JP 5493140B2
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- substrate surface
- gas
- nitrogen
- nitriding
- silicon
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Description
Ruofeng Guo et al, journal of Non-crystalline Solids 351 (2005)3006-3012. Akira Izumi, Thin Solid Films, Vol.501 (2006) 157-159. Toshiki Makimoto et al, Solid-state Electronics Vol.41 (1997)345-347. 間崎ほか、第5回Cat-CVD研究会講演予稿集, p.37(2008.6.20-21, 厚木).
2 ガス流入口
3 窒素含有ガス
4 ヒータ
5 基板ホルダー
6 基板
7 触媒体
8 シャッター
9 排気口
Claims (4)
- 窒素含有ガスを加熱された触媒体に接触させ、接触分解反応により生じた化学種を半導体又は金属からなる基材表面と反応させ、基材表面に窒化物膜を形成することからなるホットワイヤー法において、窒素含有ガスとして、窒素ガスに10%以下の水素を添加したガスを用い、かつ、基材表面温度が200℃以下の条件で反応させることを特徴とする基材表面の窒化方法。
- 窒素含有ガスとして、窒素ガスに0.5〜5%の水素を添加したガスを用いることを特徴とする請求項1記載の基材表面の窒化方法。
- 基材がシリコンであり、形成された窒化物膜が、シリコン窒化膜であることを特徴とする請求項1又は2記載の基材表面の窒化方法。
- 触媒体が、タングステン、タンタル、モリブデン、バナジウム、レニウム、白金、トリウム、ジルコニウム、イットリウム、ハフニウム、パラジウム、イリジウム、ルテニウム、鉄、ニッケル、クロム、アルミニウム、シリコン、炭素の何れか1つであることを特徴とする請求項1又は2記載の基材表面の窒化方法。
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JP2008212634A JP5493140B2 (ja) | 2008-08-21 | 2008-08-21 | ホットワイヤー法による基材表面の窒化方法 |
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JP2008212634A JP5493140B2 (ja) | 2008-08-21 | 2008-08-21 | ホットワイヤー法による基材表面の窒化方法 |
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JP2010050252A JP2010050252A (ja) | 2010-03-04 |
JP5493140B2 true JP5493140B2 (ja) | 2014-05-14 |
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JP2008212634A Expired - Fee Related JP5493140B2 (ja) | 2008-08-21 | 2008-08-21 | ホットワイヤー法による基材表面の窒化方法 |
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Families Citing this family (1)
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WO2019221265A1 (ja) | 2018-05-17 | 2019-11-21 | Kisco株式会社 | 治療器具 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2002064097A (ja) * | 1999-06-30 | 2002-02-28 | Toshiba Corp | 半導体装置の製造方法 |
JP2001345302A (ja) * | 2000-03-28 | 2001-12-14 | Seiko Epson Corp | 表面処理方法及び表面処理装置 |
JP2008060412A (ja) * | 2006-08-31 | 2008-03-13 | Hitachi Kokusai Electric Inc | 半導体デバイスの製造方法 |
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