JP5484414B2 - Ar/NH3急速熱的アニーリング工程を含むシリコンウェーハの製造方法 - Google Patents
Ar/NH3急速熱的アニーリング工程を含むシリコンウェーハの製造方法 Download PDFInfo
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- JP5484414B2 JP5484414B2 JP2011175797A JP2011175797A JP5484414B2 JP 5484414 B2 JP5484414 B2 JP 5484414B2 JP 2011175797 A JP2011175797 A JP 2011175797A JP 2011175797 A JP2011175797 A JP 2011175797A JP 5484414 B2 JP5484414 B2 JP 5484414B2
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- 238000004151 rapid thermal annealing Methods 0.000 title claims description 200
- 229910052710 silicon Inorganic materials 0.000 title claims description 137
- 239000010703 silicon Substances 0.000 title claims description 137
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 135
- 238000000034 method Methods 0.000 title claims description 134
- 230000008569 process Effects 0.000 title claims description 115
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 177
- 229910052760 oxygen Inorganic materials 0.000 claims description 177
- 239000001301 oxygen Substances 0.000 claims description 177
- 239000002244 precipitate Substances 0.000 claims description 136
- 239000007789 gas Substances 0.000 claims description 131
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- 235000012431 wafers Nutrition 0.000 description 242
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 35
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
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- C30B15/206—Controlling or regulating the thermal history of growing the ingot
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- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
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- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/911—Seed or rod holders
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- Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
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- Y10T428/12458—All metal or with adjacent metals having composition, density, or hardness gradient
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- General Physics & Mathematics (AREA)
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- Crystals, And After-Treatments Of Crystals (AREA)
Description
202 加熱パック
204 ヒーター
206 るつぼ
208 サセプタ
210 回転軸
212 第1方向
216 熱吸収物質
220 結晶引上げ軸
220a シードホルダー
222 第2方向
224 シード結晶
226 溶融シリコン
228 シリコンインゴット
230 チャンバ密封体
232 冷却ジャケット
231 インゴットと溶融シリコンの境界
300 熱遮断ハウジング
310 内部熱遮断ハウジング壁
320 熱遮断ハウジング底
330 外部熱遮断ハウジング壁
340 熱遮断ハウジング蓋
350 支持部材
360 熱遮断板
Claims (13)
- 上下面を有するシリコンウェーハに対し、NH3及びArの混合ガス雰囲気下で、少なくとも5秒間1100℃と1200℃との間で急速熱的アニーリング工程を行い、前記急速熱的アニーリング工程は70℃/秒ないし90℃/秒の割合で前記ウェーハを急速冷却することを含み、後続熱処理の間に酸素析出物として成長する場所としての役割をする核生成中心を生じ、前記ウェーハの上面から下面までの核生成中心濃度プロファイルは、前記ウェーハの上下面から各々第1及び第2深さでの第1及び第2ピークと、前記ウェーハの上面と前記第1ピークとの間、及び前記ウェーハの下面と前記第2ピークとの間での臨界濃度より低い所定の核生成中心濃度を有する領域と、前記第1ピーク及び第2ピーク間のコンケーブ領域とを含むことを特徴とするNH3/Ar急速熱的アニーリング工程を含むシリコンウェーハの製造方法。
- 前記急速熱的アニーリング工程は、前記ウェーハの上面から下面までのベイカンシ濃度プロファイルを再び生じ、前記ベイカンシ濃度プロファイルは、
前記ウェーハの上下面から各々第1及び第2深さでの第1ピーク及び第2ピークと、
前記ウェーハの上面と前記第1ピークとの間、及び前記ウェーハの下面と前記第2ピークとの間での臨界濃度より低い所定のベイカンシ濃度を有する領域と、
前記第1ピーク及び第2ピーク間のコンケーブ領域とを含むことを特徴とする請求項1に記載のNH3/Ar急速熱的アニーリング工程を含むシリコンウェーハの製造方法。 - 前記後続熱処理は、前記ウェーハの上面から下面までの酸素析出物濃度プロファイルを形成し、前記酸素析出物濃度プロファイルは、
前記ウェーハの上下面から各々第1及び第2深さでの第1ピーク及び第2ピークと、
前記ウェーハの上面と前記第1ピークとの間、及び前記ウェーハの下面と前記第2ピークとの間のデヌーデッドゾーンと、
前記第1ピーク及び第2ピーク間のコンケーブ領域とを含むことを特徴とする請求項1に記載のNH3/Ar急速熱的アニーリング工程を含むシリコンウェーハの製造方法。 - 前記急速熱的アニーリング工程は1100℃と1150℃との間で行うことを特徴とする請求項1に記載のNH3/Ar急速熱的アニーリング工程を含むシリコンウェーハの製造方法。
- 前記後続熱処理は、800℃ないし1000℃で4ないし20時間行うことを特徴とする請求項1に記載のNH3/Ar急速熱的アニーリング工程を含むシリコンウェーハの製造方法。
- 前記急速熱的アニーリング工程は、前記シリコンウェーハのためのウェーハリング工程のドナーキリングの間に行うことを特徴とする請求項1に記載のNH3/Ar急速熱的アニーリング工程を含むシリコンウェーハの製造方法。
- 前記急速熱的アニーリング工程の前に、
インゴットの引上げ速度がインタスティシャル集塊の形成を防止できるほどに十分に高く、ベイカンシ集塊の形成が防止できるほどに十分に小さなインゴット引上げ速度プロファイルによってホットゾーン炉内の溶融シリコンからインゴットを引上げる段階と、
前記シリコンウェーハを提供するために前記インゴットを半径方向にスライシングする段階とが先行することを特徴とする請求項1に記載のNH3/Ar急速熱的アニーリング工程を含むシリコンウェーハの製造方法。 - 前記急速熱的アニーリング工程の前に、
点欠陥を形成するが、インタスティシャル集塊及びベイカンシ集塊を形成しないインゴット引上げ速度プロファイルによってホットゾーン炉内の溶融シリコンからインゴットを引上げる段階と、
前記シリコンウェーハを提供するために前記インゴットを半径方向にスライシングする段階が先行することを特徴とする請求項1に記載のNH3/Ar急速熱的アニーリング工程を含むシリコンウェーハの製造方法。 - 前記急速熱的アニーリング工程の前に、
インゴットの引上げ速度がインタスティシャル集塊を形成せずにベイカンシ集塊がインゴットの直径を通じて形成されるように十分に大きいインゴット引上げ速度プロファイルによってホットゾーン炉内の溶融シリコンからインゴットを引上げる段階と、
前記シリコンウェーハを提供するために前記インゴットを半径方向にスライシングする段階が先行することを特徴とする請求項1に記載のNH3/Ar急速熱的アニーリング工程を含むシリコンウェーハの製造方法。 - 前記急速熱的アニーリング工程の前に、Ar及びNH3を含む雰囲気から酸素をパージングする段階が先行することを特徴とする請求項1に記載のNH3/Ar急速熱的アニーリング工程を含むシリコンウェーハの製造方法。
- 前記急速熱的アニーリング工程の前に、所定濃度以下の酸素が前記雰囲気に存在することを感知する段階が先行することを特徴とする請求項1に記載のNH3/Ar急速熱的アニーリング工程を含むシリコンウェーハの製造方法。
- 前記急速熱的アニーリング工程の後に、Ar及びNH3を含む雰囲気の加熱を10℃/秒ないし70℃/秒の間で、1100℃ないし1200℃の間から800℃に減少させる段階が後続することを特徴とする請求項1に記載のNH3/Ar急速熱的アニーリング工程を含むシリコンウェーハの製造方法。
- 前記急速熱的アニーリング工程は、上下面を有するシリコンウェーハに対してAr及びNH3を含む雰囲気で5秒ないし30秒間1100℃ないし1150℃で急速熱的アニーリング工程を行う段階を含むことを特徴とする請求項1に記載のNH3/Ar急速熱的アニーリング工程を含むシリコンウェーハの製造方法。
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CN1393914A (zh) | 2003-01-29 |
SG118139A1 (en) | 2006-01-27 |
JP2007290961A (ja) | 2007-11-08 |
SG145553A1 (en) | 2008-09-29 |
JP2011258973A (ja) | 2011-12-22 |
DE10227141B4 (de) | 2012-11-29 |
CN1782141A (zh) | 2006-06-07 |
KR100455400B1 (ko) | 2004-11-09 |
US6780238B2 (en) | 2004-08-24 |
KR20040076237A (ko) | 2004-08-31 |
DE10227141A1 (de) | 2003-01-23 |
JP2003051504A (ja) | 2003-02-21 |
MY129698A (en) | 2007-04-30 |
US20030068890A1 (en) | 2003-04-10 |
CN1254855C (zh) | 2006-05-03 |
KR20040076841A (ko) | 2004-09-03 |
CN1796621A (zh) | 2006-07-05 |
KR100450676B1 (ko) | 2004-10-01 |
US6503594B2 (en) | 2003-01-07 |
KR20030002300A (ko) | 2003-01-08 |
TW513741B (en) | 2002-12-11 |
KR100486311B1 (ko) | 2005-04-29 |
US20010055689A1 (en) | 2001-12-27 |
CN100510200C (zh) | 2009-07-08 |
US20030044622A1 (en) | 2003-03-06 |
US6676753B2 (en) | 2004-01-13 |
SG123642A1 (en) | 2006-07-26 |
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