JP5483887B2 - Si上のエピタキシャルな半導体ナノワイヤの金属無しでの合成方法 - Google Patents
Si上のエピタキシャルな半導体ナノワイヤの金属無しでの合成方法 Download PDFInfo
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- JP5483887B2 JP5483887B2 JP2008558235A JP2008558235A JP5483887B2 JP 5483887 B2 JP5483887 B2 JP 5483887B2 JP 2008558235 A JP2008558235 A JP 2008558235A JP 2008558235 A JP2008558235 A JP 2008558235A JP 5483887 B2 JP5483887 B2 JP 5483887B2
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Description
R.S.ワグナー、ウィスカー技術、レビット.A.P.編集、ニューヨーク、ワイリー,1970 S.F.Fang他、Si上へのガリウムヒ素および他の化合物半導体、応用物理学会誌R31-R58(1990)
−一時的に不活性化した表面を持つ基板を提供するために前記基板の表面を水素終端する終端工程と、
−前記基板(105)の不活性化した表面(110)に酸化物テンプレート(115)を提供する提供工程とを有する。前記酸化物テンプレートは、その後のナノワイヤの成長のための複数の核形成成長位置を画定する。
−前記前記基板の表面(110)上の前記酸化物テンプレートによって画定された前記複数の核形成成長位置で複数のナノワイヤを成長させる成長工程を有する。
−前記基板の表面上に有機薄膜を付ける工程と、
−核形成成長期間を提供する工程とを有し、前記基板の表面に部分酸化が起こるように時間と環境に関する条件が制御されている。前記部分酸化のプロセスは、前記付けられた有機薄膜によってまたは前記有機薄膜の複数の残留物によって少なくとも部分的に誘導され、前記酸化物テンプレートの構造と前記有機薄膜または前記有機薄膜の複数の残留物との間に相関関係を与える。
−前記基板に酸化物テンプレートを形成する揮発性種の薄膜層を付ける工程と、
−成長段階の間、前記複数のナノワイヤの核形成が前記酸化物テンプレートによって誘導されるのを確実にする時間、圧力、および温度に対する条件を提供する工程とを有する。
a):例えば、フッ化水素酸HFでエッチングすることによる基板100の表面の水素終端。HFエッチングは、Si(111)基板100の表面から自然酸化物105を除去して、一時的に不活性化した表面110を有する基板を提供する。
b):基板100の不活性化した表面110上への酸化物テンプレート115の提供。酸化物テンプレートは、その後のナノワイヤ成長のための複数の核形成成長位置を画定する。酸化物テンプレートは、以下に記載する異なる方法で提供することができる。
c):複数のナノワイヤの成長、ここでエピタキシャル成長して垂直に立っている複数のナノワイヤ125を複数の核形成成長位置のうちの少なくとも一部の基板の表面に形成する。
b')基板に揮発性種の薄膜層を付ける前処理位段階において、揮発性種の薄膜層が酸化物テンプレート115を形成する。
c')成長段階の間に、複数のナノワイヤの核形成が酸化物テンプレート115によって誘導されるのを確実にする時間、圧力、および温度に関する条件を提供する。
c':1)ナノワイヤ成長ソースを酸化物テンプレートに対する予め決定された温度より低い基板の温度で出す第1条件を提供する。この予め決められた温度は、酸化物テンプレートの再構築がこの工程の時間枠中に起こらないように選ばれる。この予め決められた温度は、最適化されたナノワイヤ成長温度より通常は低いが、ナノワイヤの核形成の開始を容易にするのには十分高い温度である。
c':2)基板温度がナノワイヤの成長を促進するように最適化する第2条件を提供する。第2温度は、第1温度より通常は高い。核形成が前の工程で開始しているので、酸化物テンプレートの変化は、ナノワイヤの成長に対しそれほど影響を与えない。
a"):例えば、フッ化水素酸HF中でエッチングすることによって基板表面に対して水素終端終了。HFエッチングは、Si(111)基板500の表面から酸化物505を除去して、一時的に不活性化した表面510を基板に提供する。好ましくは、少なくともいくらかの粗さを示すSi表面を製造するHFエッチング手順が利用される。Si(111)基板の不活性化された表面の粗さを制御するための手順は、HF水溶液のpHに依存する、そして当技術分野でよく知られている、例えば、ヒガシG.S.他「Si(111)表面の理想的な水素終端」,Applied Physics Letters 56,656-658(1990)が参照される。このような文脈において粗さは原子スケールであり、引用された工程で達成される粗さは0.3nmのオーダーであることに注意するべきである。また、用語「粗さ」は、基板表面をより酸化させがちである、基板表面が安定していなくて理想的でない水素終端について言うことに注意するべきである。
b"1):基板表面上に有機化合物の半透性薄膜を形成する。薄膜は、例えば、スピンコーティング、蒸着、および浸漬によって形成する。薄膜は、通常は、自己組立プロセスまたはパターニングプロセスのいずれでも基板表面に複数の残留物514を残す。
b"2)核形成成長期間を提供する。この期間の間、複数の分離した核形成成長位置516が基板表面に形成される。核形成成長の密度と各核形成成長位置の大きさは、有機薄膜の特性と核形成成長期間の間の条件の組合せに依存する。基板表面510の酸化は、核形成成長期間の間に起こる。酸化は、有機薄膜または有機薄膜の残留物によって誘導される。その手順は、複数の核形成成長位置516を画定する酸化物テンプレート515をもたらし、そこでは、酸化物テンプレートの構造は有機薄膜または有機薄膜の有機残留物の構造と相関関係を持つ。
c"):ナノワイヤの成長、エピタキシャル成長した垂直に立っている複数のナノワイヤ(125)が複数の核形成成長位置の少なくとも一部の基板表面上に形成される。
(i)Si+H2O→SiO+H2
(ii)SiO+H2O→SiO2+H2
である。
b":3)有機残留物の蒸発/ベーキング。手順は選ばれた有機物質に依存する。アリルアルコールでは、625℃での短い熱処理が実際的に全ての有機残留物を取り除くのに十分である。
Si(111)基板を使用した。ウェハーをさいの目に切断し、試料を超音波浴で洗浄した。有機物残留物を取り除くために、試料を紫外線照射+オゾン洗浄にさらした。試料は、次に、4%の水性フッ化水素酸中で30秒エッチングし、すすぎなしで除去した。
i:真空チャンバー中に1つまたは複数の基板を導入する。
ii:原子状水素を使用する水素終端、例えば、加熱した基板を水素プラズマに晒す。電圧とプラズマ組成物は表面粗度を決定するために使用する。
iii:基板上に有機薄膜を吹き付けるまたは蒸発させる。
iv:酸化性物質を暴露する。温度を、よりよく画定されたプロセスのために好ましく制御することができる。
v:同じ真空チャンバーを利用するまたは同じシステムの成長チャンバへ移送した後、ナノワイヤを成長する。
Claims (11)
- Si基板の表面からエピタキシャル成長したIII−V半導体物質からなるナノワイヤを含むナノ構造のデバイスを製造する方法であって、
(b)前記基板(100)の表面(110)に酸化物テンプレート(115)を提供する提供工程であって、前記酸化物テンプレート(115)の部分がSiOx(x=1)を含む複数の核形成成長位置を画定する、前記提供工程と、
(c)前記酸化物テンプレート(115)によって画定された前記複数の核形成成長位置で複数のナノワイヤを成長させる成長工程と、
を有することを特徴とする方法。 - (a)前記表面(110)を一時的に不活性化するために前記基板(100)の前記表面(110)に対して水素終端する工程を更に有することを特徴とする請求項1に記載の方法。
- 前記酸化物テンプレート(115)の前記構造が自己組立することを特徴とする請求項1または請求項2に記載の方法。
- 前記酸化物テンプレート(115)の前記構造を形成するためにパターニングする工程を更に有することを特徴とする請求項1または請求項2に記載の方法。
- 前記酸化物テンプレート(115)が、前記複数の核形成成長位置を画定する前記マスク中の複数のホールまたは複数の弱い部分を持った成長を禁止するマスクを形成し、
前記複数のナノワイヤを成長させる成長工程において、複数のナノワイヤが前記成長を禁止するマスク中の前記複数のホールまたは複数の弱い部分で核形成して成長することを特徴とする請求項1乃至請求項4のいずれか1項に記載の方法。 - 前記酸化物テンプレートを提供する工程は、前記複数のナノワイヤを成長させる成長工程の前に前処理工程を含み、
前記前処理工程は、
(b’’:1)前記基板の表面上にアリルアルコール、アセトン、n−デカンからなるグループから選択された有機薄膜を付ける工程と、
(b’’:2)核形成成長期間を提供する提供工程であって、前記基板の表面で部分酸化が起こるように時間と環境に対する条件が制御されており、前記部分酸化は、前記付けられた有機薄膜または前記有機薄膜と同じ化学組成を有する前記有機薄膜の複数の残留物によって少なくとも部分的に誘導され、前記酸化物テンプレート(515)の構造と前記有機薄膜または前記有機薄膜の複数の残留物との間に相関関係を与える、前記提供工程と、
を有することを特徴とする請求項1乃至請求項5のいずれか1項に記載の方法。 - 前記有機薄膜中に透過性が増加したまたは複数のクラックを有する複数の局部領域が形成され、
前記基板の表面の局所の酸化が、前記透過性が増加したまたは複数のクラックを有する複数の局部領域で生じることを特徴とする請求項6に記載の方法。 - 前記核形成成長期間は、前記基板を湿気または酸化物質にさらす工程を含むことを特徴とする請求項6または請求項7に記載の方法。
- 前記有機薄膜が前記基板の表面上で局所的に前記複数の残留物(514)を形成し、
前記部分酸化が、SiOx(x=1)を含む複数の核形成成長位置を形成するようにあまり酸化されない有機の前記複数の残留物(514)によって被覆された複数の領域を除いて、成長を禁止するSiO2のマスクを形成するように前記基板の表面を実質的に完全に酸化するように制御されており、それにより、続く前記複数のナノワイヤを成長させる成長工程で、複数のナノワイヤが前記有機の前記複数の残留物によって前に被覆されている前記基板上の複数の位置で核形成して成長することを特徴とする請求項6に記載の方法。 - 前記複数の核形成成長位置を画定するために前記酸化物テンプレートを提供する提供工程は、前記基板の表面上に前記有機薄膜の複数の残留物を形成する工程を含み、前記複数の残留物は前記基板の表面を局所的に変更し、前記局所的な変更が、続く前記複数のナノワイヤを成長させる成長工程における複数の核形成成長位置として作用することを特徴とする請求項6に記載の方法。
- 前記酸化物テンプレート(115)を提供する工程は、(b')前記基板に前記酸化物テンプレート(115)を形成する揮発性種の薄膜層を付ける工程を有し、
前記複数のナノワイヤを成長させる成長工程は、(c')前記複数のナノワイヤの核形成が前記酸化物テンプレート(115)によって誘導されるのを確実にする時間、圧力、および温度に対する条件を提供する工程を有することを特徴とする請求項1乃至請求項5のいずれか1項に記載の方法。
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2007
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- 2007-03-07 WO PCT/SE2007/050131 patent/WO2007102781A1/en active Application Filing
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CN101443265B (zh) | 2014-03-26 |
AU2007222162A2 (en) | 2009-02-19 |
CN101443265A (zh) | 2009-05-27 |
KR101375435B1 (ko) | 2014-03-17 |
AU2007222162A1 (en) | 2007-09-13 |
JP2009532309A (ja) | 2009-09-10 |
AU2007222162B2 (en) | 2013-03-07 |
US8691011B2 (en) | 2014-04-08 |
EP1991499A4 (en) | 2013-06-26 |
KR20080112277A (ko) | 2008-12-24 |
EP1991499A1 (en) | 2008-11-19 |
WO2007102781A1 (en) | 2007-09-13 |
US20090301389A1 (en) | 2009-12-10 |
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