JP5476576B2 - バーストモードエルビウム添加ファイバ増幅器 - Google Patents
バーストモードエルビウム添加ファイバ増幅器 Download PDFInfo
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- JP5476576B2 JP5476576B2 JP2008027372A JP2008027372A JP5476576B2 JP 5476576 B2 JP5476576 B2 JP 5476576B2 JP 2008027372 A JP2008027372 A JP 2008027372A JP 2008027372 A JP2008027372 A JP 2008027372A JP 5476576 B2 JP5476576 B2 JP 5476576B2
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- 239000000835 fiber Substances 0.000 title claims description 249
- 230000003287 optical effect Effects 0.000 claims description 201
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 107
- 150000002910 rare earth metals Chemical class 0.000 claims description 106
- 238000004891 communication Methods 0.000 claims description 81
- 229910052691 Erbium Inorganic materials 0.000 claims description 54
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims description 42
- 230000003321 amplification Effects 0.000 claims description 29
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 29
- 239000013307 optical fiber Substances 0.000 claims description 28
- 238000005253 cladding Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 description 34
- 238000010586 diagram Methods 0.000 description 20
- 230000004044 response Effects 0.000 description 16
- 238000013461 design Methods 0.000 description 15
- 230000001052 transient effect Effects 0.000 description 15
- -1 erbium ion Chemical class 0.000 description 14
- 230000006870 function Effects 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 229910052732 germanium Inorganic materials 0.000 description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 230000001276 controlling effect Effects 0.000 description 3
- 230000014509 gene expression Effects 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000005094 computer simulation Methods 0.000 description 2
- 230000000875 corresponding effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010291 electrical method Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000011045 prefiltration Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 150000000917 Erbium Chemical class 0.000 description 1
- 235000008694 Humulus lupulus Nutrition 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/29—Repeaters
- H04B10/291—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form
- H04B10/293—Signal power control
- H04B10/294—Signal power control in a multiwavelength system, e.g. gain equalisation
- H04B10/296—Transient power control, e.g. due to channel add/drop or rapid fluctuations in the input power
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
- H01S3/06708—Constructional details of the fibre, e.g. compositions, cross-section, shape or tapering
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/29—Repeaters
- H04B10/291—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form
- H04B10/293—Signal power control
- H04B10/294—Signal power control in a multiwavelength system, e.g. gain equalisation
- H04B10/2941—Signal power control in a multiwavelength system, e.g. gain equalisation using an equalising unit, e.g. a filter
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
- H01S3/06708—Constructional details of the fibre, e.g. compositions, cross-section, shape or tapering
- H01S3/06716—Fibre compositions or doping with active elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
- H01S3/06708—Constructional details of the fibre, e.g. compositions, cross-section, shape or tapering
- H01S3/0672—Non-uniform radial doping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
- H01S3/06708—Constructional details of the fibre, e.g. compositions, cross-section, shape or tapering
- H01S3/06729—Peculiar transverse fibre profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
- H01S3/06754—Fibre amplifiers
- H01S3/06758—Tandem amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1608—Solid materials characterised by an active (lasing) ion rare earth erbium
Description
Sun, Y., Zyskind, J. L., Srivastava, A. K., Zhang, L.: Analytical formula for the transient response of erbium−doped fiber amplifiers. Applied optics 38, 9 (1999) 1682−1685
活性領域拡大希土類添加ファイバの特性を検討した。図11は,活性領域拡大希土類添加ファイバの特性を検討するために製造した活性領域拡大希土類添加ファイバの概略図である。用いたファイバ増幅器は,バーストモードで用いることができる,エルビウム添加ファイバ増幅器であった。そして,活性領域の直径は7.6μm,長さが3m−4mのものを用いた。入力信号の強度は−3dBmであった。この製造したファイバ増幅器の,トラヒックが少ない場合の特性を求めるために,コンピュータによるシミュレーションを行った。なお,開口数は0.13であった。
図10に示されるような構成のシステムを構築し,オーバーポンプ光源,2つの活性領域拡大希土類添加ファイバ,及び中間利得等化フィルタを含むシステムの特性を検討した。オーバーポンプ光源の強度は−3dBmであった。2つの活性領域拡大希土類添加ファイバはバーストモードで用いることができる,エルビウム添加ファイバ増幅器であった。そして,活性領域の直径は7.6μmであり,第1の希土類添加ファイバの長さが50cmであり,第2の希土類添加ファイバの長さが2mであった。中間利得等化フィルタは,前記第1及び第2の希土類添加ファイバによる利得変動を補償するようなフィルタ特性を有するように設計し,製造した。トラヒックが少ない場合における,この製造したシステムの特性を求めるために,コンピュータによるシミュレーションを行った。
次に,1530nm〜1580nmの光波長領域における開口数とオーバーラップファクタの関係をシミュレーションした。
図16は,開口数とオーバーラップファクタの関係を求めた図面に替わるグラフである。図16に示されるように,1530nm〜1580nmの領域においては,開口数を0.2以下とすることでオーバーラップファクタを効果的に減少させることができることがわかる。特に,開口数が0.13以下とすると急激にオーバーラップファクタを減少させることができることがわかる。
2 活性領域
3 コア
4 クラッド
10 光ファイバなどの伝送路
11 光パケット
12 利得等化フィルタ
13 利得等化フィルタを通過した光パケット
14 ファイバ増幅器
15 ファイバ増幅器を通過した光パルス
21 アイコンメニュー
22 ファイバ増幅器に関するアイコン
23 利得等化フィルタに関するアイコン
24 設計画面
31 第1の希土類添加ファイバ
32 中間利得等化フィルタ
33 第2の希土類添加ファイバ
34 オーバーポンピング光源
Claims (8)
- 光パケット通信用増幅装置を用いた光パケット通信システムであって,
前記光パケット通信用増幅装置は,
活性領域の直径が3.4μm以上10μm以下である希土類添加ファイバを一つ含み,
前記希土類添加ファイバは,希土類としてエルビウムが添加されたエルビウム添加ファイバであり,
前記増幅装置は,エルビウムイオンと光のモード場との重複領域の積分値が小さくなるように,開口数を減少させることで,増幅器動作における非飽和領域を拡大させたものであり,
前記エルビウム添加ファイバの開口数は,0.2以下であり,
前記エルビウム添加ファイバは,コアと,前記コアの周囲に存在するクラッドとを有し,前記コアに希土類としてエルビウムが添加され,前記クラッドに,前記コアに含まれるエルビウム濃度より小さな濃度でエルビウムが添加された光ファイバであり,
前記希土類添加ファイバの長さは,3m以上4m以下である,
光パケット通信システム。 - 光パケット通信用増幅装置を用いた光パケット通信システムであって,
前記光パケット通信用増幅装置は,
活性領域の直径が3.4μm以上10μm以下である第1の希土類添加ファイバと,
前記第1の希土類添加ファイバを透過した光が入射する利得等化フィルタと,
前記利得等化フィルタを透過した光が入射する,活性領域の直径が3.4μm以上10μm以下である第2の希土類添加ファイバと,含み,
前記第2の希土類添加ファイバは,希土類としてエルビウムが添加されたエルビウム添加ファイバであり,
前記増幅装置は,エルビウムイオンと光のモード場との重複領域の積分値が小さくなるように,開口数を減少させることで,増幅器動作における非飽和領域を拡大させたものであり,
前記エルビウム添加ファイバの開口数は,0.2以下であり,
前記エルビウム添加ファイバは,コアと,前記コアの周囲に存在するクラッドとを有し,前記コアに希土類としてエルビウムが添加され,前記クラッドに,前記コアに含まれるエルビウム濃度より小さな濃度でエルビウムが添加された光ファイバであり,
前記第2の希土類添加ファイバの長さは,1m以上3m以下である,
光パケット通信システム。 - 前記利得等化フィルタは,前記希土類添加ファイバを透過した各波長チャネルの光強度が等しくなるように,各波長チャネルの強度を調整する,
請求項2に記載の光パケット通信システム。 - 前記第1の希土類添加ファイバは,前記第2の希土類添加ファイバより長さが短い,
請求項2に記載の光パケット通信システム。 - 前記第1の希土類添加ファイバの長さは,前記第2の希土類添加ファイバの長さの半分以下である,
請求項4に記載の光パケット通信システム。 - 前記第1の希土類添加ファイバの長さは,25cm以上75cm以下であり,
請求項5に記載の光パケット通信システム。 - 前記第1の希土類添加ファイバに入射する光の光源として,
オーバーポンピング光源を用いる,
請求項6に記載の光パケット通信システム。 - 前記オーバーポンピング光源の出力パワーが,200mW以上1W以下である,
請求項7に記載の光パケット通信システム。
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JP2008027372A JP5476576B2 (ja) | 2007-03-12 | 2008-02-07 | バーストモードエルビウム添加ファイバ増幅器 |
CN2008800136358A CN101911404A (zh) | 2007-03-12 | 2008-03-12 | 突发式掺稀土元素光纤放大器 |
US12/530,784 US9019591B2 (en) | 2007-03-12 | 2008-03-12 | Burst mode rare earth-doped fiber amplifier |
EP08720435.0A EP2133963B1 (en) | 2007-03-12 | 2008-03-12 | Burst mode rare earth-doped fiber amplifier |
PCT/JP2008/000549 WO2008129778A1 (ja) | 2007-03-12 | 2008-03-12 | バーストモード希土類添加ファイバ増幅器 |
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JP2008027372A JP5476576B2 (ja) | 2007-03-12 | 2008-02-07 | バーストモードエルビウム添加ファイバ増幅器 |
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EP (1) | EP2133963B1 (ja) |
JP (1) | JP5476576B2 (ja) |
CN (1) | CN101911404A (ja) |
WO (1) | WO2008129778A1 (ja) |
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JP5688532B2 (ja) * | 2007-03-12 | 2015-03-25 | 独立行政法人情報通信研究機構 | バーストモードエルビウム添加ファイバ増幅器 |
KR20100035043A (ko) | 2008-09-25 | 2010-04-02 | 삼성전자주식회사 | 컨텐츠 관리 방법 및 장치 |
JP5303248B2 (ja) * | 2008-11-20 | 2013-10-02 | Kddi株式会社 | 光バースト信号収容光挿入分離装置および光バースト信号収容光挿入分離方法 |
JP5556358B2 (ja) | 2010-05-19 | 2014-07-23 | 富士通株式会社 | 光増幅装置 |
JP5646976B2 (ja) * | 2010-12-09 | 2014-12-24 | 富士通テレコムネットワークス株式会社 | 光パケット交換装置および光パケット交換システム |
CN102298173B (zh) * | 2011-08-29 | 2013-01-23 | 陈抗抗 | 侧向泵浦光纤结构及其制造方法 |
JP2016021722A (ja) | 2014-07-16 | 2016-02-04 | 富士通株式会社 | 光伝送装置及び光伝送方法 |
US9999924B2 (en) | 2014-08-22 | 2018-06-19 | Sigma Labs, Inc. | Method and system for monitoring additive manufacturing processes |
WO2016081651A1 (en) | 2014-11-18 | 2016-05-26 | Sigma Labs, Inc. | Multi-sensor quality inference and control for additive manufacturing processes |
CN107428081B (zh) | 2015-01-13 | 2020-07-07 | 西格马实验室公司 | 材料鉴定***和方法 |
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JP2998247B2 (ja) * | 1991-03-20 | 2000-01-11 | 富士通株式会社 | 光増幅器用エルビウムファイバ |
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WO1999043117A2 (en) * | 1998-02-20 | 1999-08-26 | Sdl, Inc. | Upgradable, gain flattened fiber amplifiers for wdm applications |
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JP3844902B2 (ja) * | 1999-03-02 | 2006-11-15 | 富士通株式会社 | 波長多重用光増幅器及び光通信システム |
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EP1089401A1 (en) * | 1999-09-29 | 2001-04-04 | Optical Technologies U.S.A. Corp. | Optical amplifying unit and optical transmission system |
JP2006120958A (ja) * | 2004-10-22 | 2006-05-11 | Mitsubishi Cable Ind Ltd | 光増幅装置並びにその製造方法及び修理方法 |
US7760423B2 (en) * | 2005-07-20 | 2010-07-20 | Sumitomo Electric Industries, Ltd. | Optical amplifier |
JP2007053350A (ja) * | 2005-07-20 | 2007-03-01 | Sumitomo Electric Ind Ltd | 光増幅器 |
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EP2133963B1 (en) | 2024-05-01 |
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