JP5476114B2 - 温度測定用装置 - Google Patents
温度測定用装置 Download PDFInfo
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- JP5476114B2 JP5476114B2 JP2009288410A JP2009288410A JP5476114B2 JP 5476114 B2 JP5476114 B2 JP 5476114B2 JP 2009288410 A JP2009288410 A JP 2009288410A JP 2009288410 A JP2009288410 A JP 2009288410A JP 5476114 B2 JP5476114 B2 JP 5476114B2
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
- G01K1/16—Special arrangements for conducting heat from the object to the sensitive element
- G01K1/18—Special arrangements for conducting heat from the object to the sensitive element for reducing thermal inertia
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/859—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
Description
一方の主面にザグリ部が形成されている基板と、
前記基板の一方の主面の前記ザグリ部の内部に埋め込まれる温度センサと、
前記温度センサを前記ザグリ部の内部に固着させる接合材と、
内部に前記温度センサが固着された前記ザグリ部を封止する封止材と、
前記温度センサを用いて温度を検出する回路と前記温度センサとの間を電気的に接続するよう配置された導電体とを備え、
前記温度センサの周囲における前記基板の一方の主面には、前記基板を形成する物質よりも熱容量が小さい低熱容量帯が形成されており、
前記低熱容量帯は、前記温度センサおよび前記ザグリ部に所定の間隔をおき、前記温度センサおよび前記ザグリ部を取り囲むように、前記基板の一方の主面から前記基板の内部方向に向かって所定の深さを有するように形成されていることを特徴とする。
前記温度センサを用いて温度を検出する回路と、
前記回路で検出した温度のデータを記憶する記憶手段と、
前記回路に電力を供給する給電手段と、
を備えることを特徴とする。
図1は、本発明の実施の形態に係る温度測定用ウェーハの構成例を示す概略図である。図1に示す図では、温度測定用ウェーハ1は、基板2と、複数の温度センサ3と、配線4と、処理基板5と、電源基板6とから構成されている。各温度センサ3の周辺には、その他の温度測定用ウェーハ1を構成する部材等も存在するが、これらについては後に詳細に述べる。温度測定用ウェーハ1は、半導体製造プロセスにおいて用いられる加熱処理ユニット内で処理されるウェーハの実際の温度を測定するための、実際の被処理基板と同一材質の基板である。
図5は、実施の形態の変形例1に係る温度測定用ウェーハの温度センサ周辺を示す断面図である。温度測定用ウェーハ1の構成の概略については、図1に示した実施の形態と同様である。温度測定用ウェーハ1の各構成要素である基板2、温度センサ3、配線4、処理基板5、電源基板6、ワイヤ7、ザグリ部9、接合材10および封止材11の詳細については、前述した実施の形態と同様である。
図6は、実施の形態の変形例2に係る温度測定用ウェーハの温度センサ周辺を示す拡大図である。温度測定用ウェーハ1の構成の概略については、図1に示した実施の形態と同様である。温度測定用ウェーハ1の各構成要素の詳細についても、前述した実施の形態と同様である。
熱流体解析ソフトFluentを用いて、本発明の温度測定用ウェーハ1に関する熱伝導シミュレーションを行った結果を以下に示す。
2 基板
3 温度センサ
4 配線
5 処理基板
6 電源基板
7 ワイヤ
8 凹部
9 ザグリ部
10 接合材
11 封止材
12 多孔質帯
13 Si基板
14 SiO2層
15 ポリイミド層
16 ステージ
17 耐熱ペースト
Claims (7)
- 一方の主面にザグリ部が形成されている基板と、
前記基板の一方の主面の前記ザグリ部の内部に埋め込まれる温度センサと、
前記温度センサを前記ザグリ部の内部に固着させる接合材と、
内部に前記温度センサが固着された前記ザグリ部を封止する封止材と、
前記温度センサを用いて温度を検出する回路と前記温度センサとの間を電気的に接続するよう配置された導電体とを備え、
前記温度センサの周囲における前記基板の一方の主面には、前記基板を形成する物質よりも熱容量が小さい低熱容量帯が形成されており、
前記低熱容量帯は、前記温度センサおよび前記ザグリ部に所定の間隔をおき、前記温度センサおよび前記ザグリ部を取り囲むように、前記基板の一方の主面から前記基板の内部方向に向かって所定の深さを有するように形成されていることを特徴とする温度測定用装置。 - 前記低熱容量帯は、断面が凹状の溝であることを特徴とする請求項1に記載の温度測定用装置。
- 前記低熱容量帯は、多孔質構造を有する物質で形成されていることを特徴とする請求項1に記載の温度測定用装置。
- 前記低熱容量帯は、ナノ結晶シリコンで形成されていることを特徴とする請求項1または3に記載の温度測定用装置。
- 前記温度測定用装置は、ウェーハ状の温度測定用装置であることを特徴とする請求項1ないし4のいずれか1項に記載の温度測定用装置。
- 前記温度センサは、RTDであることを特徴とする請求項1ないし5のいずれか1項に記載の温度測定用装置。
- 前記基板上に、
前記温度センサを用いて温度を検出する回路と、
前記回路で検出した温度のデータを記憶する記憶手段と、
前記回路に電力を供給する給電手段と、
を備えることを特徴とする請求項1ないし6のいずれか1項に記載の温度測定用装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009288410A JP5476114B2 (ja) | 2009-12-18 | 2009-12-18 | 温度測定用装置 |
PCT/JP2010/071841 WO2011074434A1 (ja) | 2009-12-18 | 2010-12-06 | 温度測定用装置 |
KR1020127015541A KR101447340B1 (ko) | 2009-12-18 | 2010-12-06 | 온도 측정용 장치 |
CN201080057941.9A CN102695947B (zh) | 2009-12-18 | 2010-12-06 | 温度测量装置 |
US13/516,916 US8608378B2 (en) | 2009-12-18 | 2010-12-06 | Temperature measuring apparatus |
TW099144359A TWI432709B (zh) | 2009-12-18 | 2010-12-17 | Device for temperature measurement |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009288410A JP5476114B2 (ja) | 2009-12-18 | 2009-12-18 | 温度測定用装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011128081A JP2011128081A (ja) | 2011-06-30 |
JP5476114B2 true JP5476114B2 (ja) | 2014-04-23 |
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JP2009288410A Active JP5476114B2 (ja) | 2009-12-18 | 2009-12-18 | 温度測定用装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8608378B2 (ja) |
JP (1) | JP5476114B2 (ja) |
KR (1) | KR101447340B1 (ja) |
CN (1) | CN102695947B (ja) |
TW (1) | TWI432709B (ja) |
WO (1) | WO2011074434A1 (ja) |
Families Citing this family (14)
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US9476779B2 (en) * | 2012-12-13 | 2016-10-25 | Robert Bosch Gmbh | Sensor with an embedded thermistor for precise local temperature measurement |
KR101464703B1 (ko) * | 2013-02-21 | 2014-11-27 | 호서대학교 산학협력단 | 반도체 웨이퍼의 베이크 유닛 챔버 |
TWI523136B (zh) * | 2013-07-18 | 2016-02-21 | Premtek Int Inc | 半導體製程溫度量測裝置 |
KR20170024309A (ko) * | 2015-08-25 | 2017-03-07 | 엘지전자 주식회사 | 전자 디바이스 |
JP6570966B2 (ja) | 2015-10-27 | 2019-09-04 | 株式会社ニューフレアテクノロジー | 温度測定マスクおよび温度測定方法 |
CN206080497U (zh) * | 2015-12-18 | 2017-04-12 | 上海温尔信息科技有限公司 | 皮肤贴附式癌细胞异常温度探针 |
KR102414892B1 (ko) * | 2016-04-19 | 2022-07-01 | 도쿄엘렉트론가부시키가이샤 | 온도 측정용 기판 및 온도 측정 시스템 |
CN107607215B (zh) * | 2016-07-11 | 2024-07-12 | 泰科电子(上海)有限公司 | 温度测量组件、温度测量装置及电器组件 |
JP2018141700A (ja) * | 2017-02-28 | 2018-09-13 | セイコーエプソン株式会社 | 電子部品搬送装置および電子部品検査装置 |
US11315811B2 (en) | 2018-09-06 | 2022-04-26 | Kla Corporation | Process temperature measurement device fabrication techniques and methods of calibration and data interpolation of the same |
CN109341889B (zh) * | 2018-11-12 | 2021-06-22 | 哈尔滨工业大学 | 环抛加工中光学元件内部温度的测量方法 |
CN110299310A (zh) * | 2019-06-14 | 2019-10-01 | 武汉华星光电半导体显示技术有限公司 | 晶粒软模封装接合测温治具及其设置方法 |
JP7394880B2 (ja) * | 2019-09-12 | 2023-12-08 | 長江存儲科技有限責任公司 | 熱インジケータを備えた基板を含む電子部品 |
US20220357045A1 (en) * | 2021-05-05 | 2022-11-10 | Electrolux Home Products, Inc. | Temperature limiting software to enable use of temperature-sensitive components on induction cooktops |
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JP3330570B2 (ja) | 1999-09-29 | 2002-09-30 | 助川電気工業株式会社 | 模擬測温板及び縦型加熱炉用温度測定装置 |
US6995691B2 (en) * | 2001-02-14 | 2006-02-07 | Heetronix | Bonded structure using reacted borosilicate mixture |
US7757574B2 (en) * | 2002-01-24 | 2010-07-20 | Kla-Tencor Corporation | Process condition sensing wafer and data analysis system |
DE10219247A1 (de) * | 2002-04-30 | 2003-12-18 | Bosch Gmbh Robert | Temperatursensor und Verfahren zu dessen Herstellung |
US7135852B2 (en) * | 2002-12-03 | 2006-11-14 | Sensarray Corporation | Integrated process condition sensing wafer and data analysis system |
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JP2008139067A (ja) | 2006-11-30 | 2008-06-19 | Dainippon Screen Mfg Co Ltd | 温度測定用基板および温度測定システム |
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2009
- 2009-12-18 JP JP2009288410A patent/JP5476114B2/ja active Active
-
2010
- 2010-12-06 WO PCT/JP2010/071841 patent/WO2011074434A1/ja active Application Filing
- 2010-12-06 KR KR1020127015541A patent/KR101447340B1/ko active IP Right Grant
- 2010-12-06 US US13/516,916 patent/US8608378B2/en active Active
- 2010-12-06 CN CN201080057941.9A patent/CN102695947B/zh active Active
- 2010-12-17 TW TW099144359A patent/TWI432709B/zh active
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CN102695947A (zh) | 2012-09-26 |
TW201135200A (en) | 2011-10-16 |
US8608378B2 (en) | 2013-12-17 |
KR101447340B1 (ko) | 2014-10-06 |
CN102695947B (zh) | 2014-08-27 |
TWI432709B (zh) | 2014-04-01 |
KR20120084792A (ko) | 2012-07-30 |
WO2011074434A1 (ja) | 2011-06-23 |
JP2011128081A (ja) | 2011-06-30 |
US20120269229A1 (en) | 2012-10-25 |
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