JP5470519B2 - 薄膜トランジスタ、その製造方法及び液晶表示装置 - Google Patents
薄膜トランジスタ、その製造方法及び液晶表示装置 Download PDFInfo
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- JP5470519B2 JP5470519B2 JP2009173709A JP2009173709A JP5470519B2 JP 5470519 B2 JP5470519 B2 JP 5470519B2 JP 2009173709 A JP2009173709 A JP 2009173709A JP 2009173709 A JP2009173709 A JP 2009173709A JP 5470519 B2 JP5470519 B2 JP 5470519B2
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- 239000010409 thin film Substances 0.000 title claims description 45
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000010408 film Substances 0.000 claims description 174
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 82
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 51
- 229920005591 polysilicon Polymers 0.000 claims description 50
- 239000000758 substrate Substances 0.000 claims description 25
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000011521 glass Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78678—Polycrystalline or microcrystalline silicon transistor with inverted-type structure, e.g. with bottom gate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Recrystallisation Techniques (AREA)
Description
2,11:ゲート電極
3,12:ゲート絶縁膜
4,13:ポリシリコン膜
4a,5,5a,14:a−Si:H膜
6,6a:n+膜
7a,15a:ドレイン電極
7b,15b:ソース電極
8,16:保護膜
Claims (5)
- 絶縁性基板と、この絶縁性基板の上に形成されたゲート電極と、このゲート電極上に形成されたゲート絶縁膜と、このゲート絶縁膜上の前記ゲート電極に対応する位置にアイランド状に形成されたポリシリコン膜と、このポリシリコン膜の上面及び側面を覆うように形成されたアモルファスシリコン膜と、このアモルファスシリコン膜の両端部に電気的に接続するように形成されたソース・ドレイン電極と、を有し、前記ポリシリコン膜は、第1のアモルファスシリコン膜を全面に形成した後、前記アイランドの部分のみをアニールして結晶化したものであり、前記アモルファスシリコン膜における前記ポリシリコン膜の側面を覆う部分は、前記第1のアモルファスシリコン膜の前記アイランドの周辺部分を残して他の部分を除去することにより形成したものであり、前記アモルファスシリコン膜における前記ポリシリコン膜の上面を覆う部分は、第2のアモルファスシリコン膜により形成されたものであることを特徴とする逆スタガ構造の薄膜トランジスタ。
- 前記ゲート絶縁膜はSiN膜であることを特徴とする請求項1に記載の薄膜トランジスタ。
- 絶縁性基板上にゲート電極を形成する工程と、前記ゲート電極を含む前記基板上にゲート絶縁膜を形成する工程と、前記ゲート絶縁膜上に第1のアモルファスシリコン膜を形成する工程と、前記第1のアモルファスシリコン膜に対し前記ゲート電極に対応するアイランド状領域にレーザ光を照射してこの領域をポリシリコン膜に改質する工程と、この改質ポリシリコン領域及び第1のアモルファスシリコン領域上に第2のアモルファスシリコン膜を形成する工程と、前記改質ポリシリコン膜の上面及び側面を覆うアモルファスシリコン膜を残して他の部分のアモルファスシリコン膜を除去する工程と、残存したアモルファスシリコン膜の両端部に電気的に接続するようにソース・ドレイン電極を形成する工程と、を有することを特徴とする逆スタガ構造の薄膜トランジスタの製造方法。
- 前記レーザ光の照射工程において、複数個のマイクロレンズを配置したマイクロレンズアレイによりレーザ光を集光して複数個のレーザビームを得、マトリクス状に配置された複数個の薄膜トランジスタの前記アイランド状領域を前記各レーザビームにより照射して、複数個の薄膜トランジスタのポリシリコン領域を形成することを特徴とする請求項3に記載の薄膜トランジスタの製造方法。
- 前記請求項1又は2に記載の薄膜トランジスタを、表示部の画素トランジスタとして使用することを特徴とする液晶表示装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009173709A JP5470519B2 (ja) | 2009-07-24 | 2009-07-24 | 薄膜トランジスタ、その製造方法及び液晶表示装置 |
KR1020127004740A KR101713360B1 (ko) | 2009-07-24 | 2010-07-16 | 박막 트랜지스터, 그 제조 방법 및 액정 표시 장치 |
PCT/JP2010/062075 WO2011010611A1 (ja) | 2009-07-24 | 2010-07-16 | 薄膜トランジスタ、その製造方法及び液晶表示装置 |
KR1020177003103A KR101803691B1 (ko) | 2009-07-24 | 2010-07-16 | 박막 트랜지스터, 그 제조 방법 및 액정 표시 장치 |
CN201080033821.5A CN102576733B (zh) | 2009-07-24 | 2010-07-16 | 薄膜晶体管、其制造方法及液晶显示装置 |
TW099124143A TWI509810B (zh) | 2009-07-24 | 2010-07-22 | 薄膜電晶體及其製造方法與液晶顯示裝置 |
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JP2009173709A JP5470519B2 (ja) | 2009-07-24 | 2009-07-24 | 薄膜トランジスタ、その製造方法及び液晶表示装置 |
Publications (2)
Publication Number | Publication Date |
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JP2011029411A JP2011029411A (ja) | 2011-02-10 |
JP5470519B2 true JP5470519B2 (ja) | 2014-04-16 |
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JP2009173709A Active JP5470519B2 (ja) | 2009-07-24 | 2009-07-24 | 薄膜トランジスタ、その製造方法及び液晶表示装置 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP5470519B2 (ja) |
KR (2) | KR101803691B1 (ja) |
CN (1) | CN102576733B (ja) |
TW (1) | TWI509810B (ja) |
WO (1) | WO2011010611A1 (ja) |
Cited By (2)
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US11004682B2 (en) | 2016-12-15 | 2021-05-11 | Sakai Display Products Corporation | Laser annealing apparatus, laser annealing method, and mask |
US11024503B2 (en) | 2016-03-04 | 2021-06-01 | Sakai Display Products Corporation | Laser annealing device, mask, thin film transistor, and laser annealing method |
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WO2012117439A1 (ja) * | 2011-02-28 | 2012-09-07 | パナソニック株式会社 | 薄膜半導体装置及びその製造方法 |
WO2014061762A1 (en) * | 2012-10-17 | 2014-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
WO2016072024A1 (ja) * | 2014-11-07 | 2016-05-12 | 堺ディスプレイプロダクト株式会社 | 薄膜トランジスタの製造方法、薄膜トランジスタ及び表示パネル |
JP6471379B2 (ja) | 2014-11-25 | 2019-02-20 | 株式会社ブイ・テクノロジー | 薄膜トランジスタ、薄膜トランジスタの製造方法及びレーザアニール装置 |
CN104460165B (zh) * | 2014-12-31 | 2017-06-16 | 深圳市华星光电技术有限公司 | 一种液晶显示器和液晶面板以及阵列基板 |
WO2016157313A1 (ja) * | 2015-03-27 | 2016-10-06 | 堺ディスプレイプロダクト株式会社 | 薄膜トランジスタ及び表示パネル |
JPWO2016157351A1 (ja) * | 2015-03-30 | 2018-01-18 | 堺ディスプレイプロダクト株式会社 | 薄膜トランジスタ及び表示パネル |
WO2016170571A1 (ja) * | 2015-04-20 | 2016-10-27 | 堺ディスプレイプロダクト株式会社 | 薄膜トランジスタの製造方法、薄膜トランジスタ及び表示パネル |
CN108028201B (zh) * | 2015-09-17 | 2021-06-04 | 堺显示器制品株式会社 | 薄膜晶体管和薄膜晶体管的制造方法 |
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WO2017072921A1 (ja) * | 2015-10-29 | 2017-05-04 | 堺ディスプレイプロダクト株式会社 | 薄膜トランジスタ基板の製造方法 |
CN105633101A (zh) * | 2016-04-01 | 2016-06-01 | 京东方科技集团股份有限公司 | Tft阵列基板及其制造方法、显示装置 |
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CN109997213A (zh) | 2016-09-28 | 2019-07-09 | 堺显示器制品株式会社 | 激光退火装置和激光退火方法 |
USD944655S1 (en) | 2019-11-29 | 2022-03-01 | Jirasak Rattanapaibooncharoen | Double cup carrier |
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JP2009076707A (ja) * | 2007-09-21 | 2009-04-09 | Hitachi Displays Ltd | 表示装置の製造方法 |
JP5309387B2 (ja) * | 2007-09-28 | 2013-10-09 | 株式会社日立製作所 | 半導体層とこの半導体層を用いた半導体装置および表示装置 |
TWI481029B (zh) * | 2007-12-03 | 2015-04-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
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2009
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- 2010-07-16 KR KR1020127004740A patent/KR101713360B1/ko active IP Right Grant
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11024503B2 (en) | 2016-03-04 | 2021-06-01 | Sakai Display Products Corporation | Laser annealing device, mask, thin film transistor, and laser annealing method |
US11004682B2 (en) | 2016-12-15 | 2021-05-11 | Sakai Display Products Corporation | Laser annealing apparatus, laser annealing method, and mask |
Also Published As
Publication number | Publication date |
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TW201115742A (en) | 2011-05-01 |
KR20170017008A (ko) | 2017-02-14 |
KR20120033353A (ko) | 2012-04-06 |
CN102576733B (zh) | 2015-04-22 |
CN102576733A (zh) | 2012-07-11 |
KR101713360B1 (ko) | 2017-03-22 |
TWI509810B (zh) | 2015-11-21 |
JP2011029411A (ja) | 2011-02-10 |
WO2011010611A1 (ja) | 2011-01-27 |
KR101803691B1 (ko) | 2017-12-28 |
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