JP5444355B2 - 不揮発性メモリにおける検出中のデータ状態ベースの温度補償 - Google Patents
不揮発性メモリにおける検出中のデータ状態ベースの温度補償 Download PDFInfo
- Publication number
- JP5444355B2 JP5444355B2 JP2011527874A JP2011527874A JP5444355B2 JP 5444355 B2 JP5444355 B2 JP 5444355B2 JP 2011527874 A JP2011527874 A JP 2011527874A JP 2011527874 A JP2011527874 A JP 2011527874A JP 5444355 B2 JP5444355 B2 JP 5444355B2
- Authority
- JP
- Japan
- Prior art keywords
- state
- storage element
- current
- voltage
- data
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
Description
Claims (10)
- 不揮発性記憶装置を動作させるための方法であって、
複数の電圧(VCGR−A、VCGR−B、VCGR−C)を、一つずつ、選択された不揮発性記憶素子(408〜422)の制御ゲート(100CG)に印加すること、
各電圧を印加する間に、前記選択された不揮発性記憶素子に少なくとも一つの電流源(804)を結合すること、
前記選択された不揮発性記憶素子を流れる電流(ISENSE)を検出すること、及び、
前記検出された電流を参照電流(ISENSE−A、ISENSE−B、ISENSE−C)と比較すること、を備え、
少なくとも二つの電圧において異なる参照電流が採用され、
前記参照電流は、異なるデータ状態の異なる関係(520、522、524)に従って設定され、
前記関係は、温度係数対電流の関係である、方法。 - 電圧が高くなると、前記参照電流が高くなる、請求項1に記載の方法。
- 電圧毎に異なる参照電流が採用される、請求項1又は2に記載の方法。
- 少なくとも二つの電圧において同じ前記参照電流が採用される、請求項1から3のいずれか一項に記載の方法。
- 前記少なくとも一つの電流源は、電荷保存構成要素(804)を備え、
前記「検出すること」は、前記電荷保存構成要素が放電する程度を決定すること、を備える、請求項1から4のいずれか一項に記載の方法。 - 前記複数の電圧は、読み出し動作又は検証動作で印加される、請求項1から5のいずれか一項に記載の方法。
- 少なくとも一つの電圧は、温度で補償される、請求項1から6のいずれか一項に記載の方法。
- 前記選択された不揮発性記憶素子は、ストリング(818)内の他の不揮発性記憶素子に直列接続されており、
前記少なくとも一つの電流源は、前記ストリングのドレイン終端に結合されている、請求項1から7のいずれか一項に記載の方法。 - 不揮発性記憶システムであって、
複数の電圧(VCGR−A、VCGR−B、VCGR−C)を、一つずつ、選択された不揮発性記憶素子(408〜422)の制御ゲート(100CG)に印加する手段、
各電圧を印加する間に、前記選択された不揮発性記憶素子に少なくとも一つの電流源(804)を結合する手段、
前記選択された不揮発性記憶素子を流れる電流(ISENSE)を検出する手段、及び
前記検出された電流を参照電流(ISENSE−A、ISENSE−B、ISENSE−C)と比較すること、
を備え、
少なくとも二つの電圧において異なる参照電流が採用され、
前記参照電流は、異なるデータ状態の異なる関係(520、522、524)に従って設定され、
前記関係は、温度係数対電流の関係である、不揮発性記憶システム。 - 少なくとも二つの電圧において同じ前記参照電流が採用される、請求項9に記載の不揮発性記憶システム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/233,950 | 2008-09-19 | ||
US12/233,950 US7755946B2 (en) | 2008-09-19 | 2008-09-19 | Data state-based temperature compensation during sensing in non-volatile memory |
PCT/US2009/056405 WO2010033409A1 (en) | 2008-09-19 | 2009-09-09 | Data state-based temperature compensation during sensing in non-volatile memory |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012503269A JP2012503269A (ja) | 2012-02-02 |
JP5444355B2 true JP5444355B2 (ja) | 2014-03-19 |
Family
ID=41396128
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011527874A Expired - Fee Related JP5444355B2 (ja) | 2008-09-19 | 2009-09-09 | 不揮発性メモリにおける検出中のデータ状態ベースの温度補償 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7755946B2 (ja) |
EP (1) | EP2332146B1 (ja) |
JP (1) | JP5444355B2 (ja) |
KR (1) | KR101595044B1 (ja) |
CN (1) | CN102160119B (ja) |
TW (1) | TW201027539A (ja) |
WO (1) | WO2010033409A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9653156B2 (en) | 2015-02-20 | 2017-05-16 | Kabushiki Kaisha Toshiba | Memory controller, nonvolatile semiconductor memory device and memory system |
Families Citing this family (55)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101504339B1 (ko) * | 2008-11-03 | 2015-03-24 | 삼성전자주식회사 | 플래시 메모리 장치 및 그것을 포함하는 메모리 시스템 |
US7944744B2 (en) * | 2009-06-30 | 2011-05-17 | Sandisk Il Ltd. | Estimating values related to discharge of charge-storing memory cells |
US8116139B2 (en) * | 2010-01-29 | 2012-02-14 | Sandisk Technologies Inc. | Bit line stability detection |
US8213255B2 (en) | 2010-02-19 | 2012-07-03 | Sandisk Technologies Inc. | Non-volatile storage with temperature compensation based on neighbor state information |
US8547746B2 (en) * | 2011-02-24 | 2013-10-01 | Micron Technology, Inc. | Voltage generation and adjustment in a memory device |
US8472274B2 (en) | 2011-03-02 | 2013-06-25 | Apple Inc. | Using temperature sensors with a memory device |
US8542537B2 (en) * | 2011-04-29 | 2013-09-24 | Spansion Llc | Method and apparatus for temperature compensation for programming and erase distributions in a flash memory |
US8526233B2 (en) | 2011-05-23 | 2013-09-03 | Sandisk Technologies Inc. | Ramping pass voltage to enhance channel boost in memory device, with optional temperature compensation |
US8611157B2 (en) | 2011-12-22 | 2013-12-17 | Sandisk Technologies Inc. | Program temperature dependent read |
US8576651B2 (en) | 2012-01-20 | 2013-11-05 | Sandisk 3D Llc | Temperature compensation of conductive bridge memory arrays |
KR101809202B1 (ko) | 2012-01-31 | 2017-12-14 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 그것의 읽기 방법 |
US8582381B2 (en) | 2012-02-23 | 2013-11-12 | SanDisk Technologies, Inc. | Temperature based compensation during verify operations for non-volatile storage |
KR20130127686A (ko) | 2012-05-15 | 2013-11-25 | 삼성전자주식회사 | 비휘발성 메모리 장치의 데이터 프로그래밍 수행 방법 및 장치와 이에 이용되는 데이터 프로그래밍 모드 설정 방법 및 장치 |
KR102083496B1 (ko) | 2012-11-21 | 2020-03-02 | 삼성전자 주식회사 | 리드 동작 시 온도 보상된 워드 라인 전압을 인가하는 반도체 메모리 장치 및 그 방법 |
KR101987934B1 (ko) | 2012-12-07 | 2019-06-13 | 에스케이하이닉스 주식회사 | 전류 보상기를 포함하는 반도체 장치 |
US8885416B2 (en) | 2013-01-30 | 2014-11-11 | Sandisk Technologies Inc. | Bit line current trip point modulation for reading nonvolatile storage elements |
US9202579B2 (en) * | 2013-03-14 | 2015-12-01 | Sandisk Technologies Inc. | Compensation for temperature dependence of bit line resistance |
US9117549B1 (en) * | 2014-03-25 | 2015-08-25 | Integrated Silicon Solution, Inc. | Auto low current programming method without verify |
US20150279472A1 (en) * | 2014-03-26 | 2015-10-01 | Intel Corporation | Temperature compensation via modulation of bit line voltage during sensing |
KR102210964B1 (ko) | 2014-05-13 | 2021-02-03 | 삼성전자주식회사 | 스토리지 장치, 스토리지 장치의 동작 방법, 그리고 스토리지 장치를 액세스하는 액세스 방법 |
US9633742B2 (en) | 2014-07-10 | 2017-04-25 | Sandisk Technologies Llc | Segmentation of blocks for faster bit line settling/recovery in non-volatile memory devices |
US9361994B1 (en) | 2014-09-04 | 2016-06-07 | Cypress Semiconductor Corporation | Method of increasing read current window in non-volatile memory |
US9543028B2 (en) * | 2014-09-19 | 2017-01-10 | Sandisk Technologies Llc | Word line dependent temperature compensation scheme during sensing to counteract cross-temperature effect |
KR102251810B1 (ko) | 2014-09-30 | 2021-05-13 | 삼성전자주식회사 | 메모리 장치, 메모리 시스템 및 메모리 장치에 대한 제어 방법 |
US9824750B2 (en) * | 2015-02-24 | 2017-11-21 | Empire Technology Development Llc | Memory sensing |
US9245642B1 (en) | 2015-03-30 | 2016-01-26 | Sandisk Technologies Inc. | Temperature dependent voltage to unselected drain side select transistor during program of 3D NAND |
KR102339779B1 (ko) | 2015-04-06 | 2021-12-15 | 삼성전자주식회사 | 데이터 저장 장치, 이를 포함하는 데이터 처리 시스템, 및 상기 시스템의 작동 방법 |
US9543016B1 (en) * | 2015-09-29 | 2017-01-10 | Integrated Silicon Solution, Inc. | Low power high speed program method for multi-time programmable memory device |
US9721652B2 (en) | 2015-11-17 | 2017-08-01 | Sandisk Technologies Llc | State dependent sensing for wordline interference correction |
US9959915B2 (en) | 2015-12-11 | 2018-05-01 | Sandisk Technologies Llc | Voltage generator to compensate for process corner and temperature variations |
TWI616889B (zh) * | 2016-01-18 | 2018-03-01 | 旺宏電子股份有限公司 | 半導體裝置與其補償方法 |
TWI607445B (zh) * | 2016-03-28 | 2017-12-01 | 卡比科技有限公司 | 非揮發性記憶體裝置及其運作方法 |
US9715937B1 (en) * | 2016-06-15 | 2017-07-25 | Sandisk Technologies Llc | Dynamic tuning of first read countermeasures |
US10127988B2 (en) * | 2016-08-26 | 2018-11-13 | Micron Technology, Inc. | Temperature compensation in memory sensing |
US9811267B1 (en) | 2016-10-14 | 2017-11-07 | Sandisk Technologies Llc | Non-volatile memory with intelligent temperature sensing and local throttling |
CN108109660A (zh) * | 2016-11-24 | 2018-06-01 | 北京兆易创新科技股份有限公司 | 一种存储单元的读取方法及装置 |
CN107170484B (zh) * | 2017-03-17 | 2020-01-24 | 北京兆易创新科技股份有限公司 | 一种NAND Flash电压自动补偿方法和装置 |
US10146460B1 (en) | 2017-06-01 | 2018-12-04 | Apple Inc. | Programming schemes for avoidance or recovery from cross-temperature read failures |
KR102447602B1 (ko) | 2017-10-25 | 2022-09-26 | 삼성전자주식회사 | 메모리 장치 및 그 동적 가비지 컬렉션 방법 |
CN109841255B (zh) * | 2017-11-29 | 2020-12-01 | 北京兆易创新科技股份有限公司 | 闪存参考电流的温度系数的选择方法及装置 |
US10528292B2 (en) * | 2018-05-22 | 2020-01-07 | Luca De Santis | Power down/power-loss memory controller |
US10541031B2 (en) | 2018-06-15 | 2020-01-21 | Sandisk Technologies Llc | Single pulse SLC programming scheme |
US10825513B2 (en) | 2018-06-26 | 2020-11-03 | Sandisk Technologies Llc | Parasitic noise control during sense operations |
US10978156B2 (en) | 2018-06-29 | 2021-04-13 | Sandisk Technologies Llc | Concurrent programming of multiple cells for non-volatile memory devices |
US11545221B2 (en) | 2018-06-29 | 2023-01-03 | Sandisk Technologies Llc | Concurrent programming of multiple cells for non-volatile memory devices |
US10878902B2 (en) * | 2018-07-16 | 2020-12-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | RRAM voltage compensation |
US10852953B2 (en) | 2018-10-25 | 2020-12-01 | Micron Technology, Inc. | Dynamic temperature compensation in a memory component |
US10782759B1 (en) | 2019-04-23 | 2020-09-22 | Arbor Company, Lllp | Systems and methods for integrating batteries with stacked integrated circuit die elements |
WO2020236379A1 (en) * | 2019-05-21 | 2020-11-26 | Arbor Company Lllp | Systems and methods for integrating batteries with stacked integrated circuit die elements |
US10978145B2 (en) | 2019-08-14 | 2021-04-13 | Sandisk Technologies Llc | Programming to minimize cross-temperature threshold voltage widening |
US11250926B2 (en) | 2019-10-16 | 2022-02-15 | Sandisk Technologies Llc | Positive feedback and parallel searching enhanced optimal read method for non-volatile memory |
KR102567207B1 (ko) | 2020-06-29 | 2023-08-16 | 아르보 컴퍼니 엘엘엘피 | 5g 프로세서 독립형 모뎀과 함께 3d 다이 스태킹 재구성 가능 프로세서 모듈을 사용하는 모바일 iot 에지 디바이스 |
US11430531B2 (en) | 2020-09-08 | 2022-08-30 | Western Digital Technologies, Inc. | Read integration time calibration for non-volatile storage |
US11961573B2 (en) | 2021-11-23 | 2024-04-16 | Sandisk Technologies, Llc | Memory device that is optimized for operation at different temperatures |
US11894071B2 (en) | 2021-12-13 | 2024-02-06 | Sandisk Technologies Llc | Non-volatile memory with differential temperature compensation for bulk programming |
Family Cites Families (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5172338B1 (en) * | 1989-04-13 | 1997-07-08 | Sandisk Corp | Multi-state eeprom read and write circuits and techniques |
US5422842A (en) * | 1993-07-08 | 1995-06-06 | Sundisk Corporation | Method and circuit for simultaneously programming and verifying the programming of selected EEPROM cells |
GB9423036D0 (en) * | 1994-11-15 | 1995-01-04 | Sgs Thomson Microelectronics | An integrated circuit memory device |
US5684739A (en) * | 1994-11-30 | 1997-11-04 | Nkk Corporation | Apparatus and method for determining current or voltage of a semiconductor device |
JP3531081B2 (ja) * | 1994-11-30 | 2004-05-24 | 富士通株式会社 | 半導体装置およびその製造方法、ならびにそれを利用したベリファイ方法 |
US6166979A (en) * | 1995-09-13 | 2000-12-26 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device and method for using the same |
JP3648304B2 (ja) * | 1995-11-17 | 2005-05-18 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US5790453A (en) * | 1996-10-24 | 1998-08-04 | Micron Quantum Devices, Inc. | Apparatus and method for reading state of multistate non-volatile memory cells |
US5898617A (en) * | 1997-05-21 | 1999-04-27 | Motorola, Inc. | Sensing circuit and method |
US6227762B1 (en) * | 1998-09-03 | 2001-05-08 | Wesley Van Velsor | Paving apparatus and method |
US6462998B1 (en) * | 1999-02-13 | 2002-10-08 | Integrated Device Technology, Inc. | Programmable and electrically configurable latch timing circuit |
JP3954245B2 (ja) * | 1999-07-22 | 2007-08-08 | 株式会社東芝 | 電圧発生回路 |
US6205074B1 (en) * | 2000-02-29 | 2001-03-20 | Advanced Micro Devices, Inc. | Temperature-compensated bias generator |
JP4493169B2 (ja) * | 2000-07-04 | 2010-06-30 | 株式会社ルネサステクノロジ | 不揮発性半導体記憶装置 |
DE60129928D1 (de) * | 2001-04-19 | 2007-09-27 | St Microelectronics Srl | Verfahren und Schaltung zur Zeitsteuerung des dynamischen Auslesens einer Speicherzelle mit Kontrolle der Integrationszeit |
US6560152B1 (en) * | 2001-11-02 | 2003-05-06 | Sandisk Corporation | Non-volatile memory with temperature-compensated data read |
KR100476888B1 (ko) * | 2002-04-04 | 2005-03-17 | 삼성전자주식회사 | 온도보상기능을 가진 멀티비트 플래쉬메모리 |
US7046568B2 (en) * | 2002-09-24 | 2006-05-16 | Sandisk Corporation | Memory sensing circuit and method for low voltage operation |
US7443757B2 (en) * | 2002-09-24 | 2008-10-28 | Sandisk Corporation | Non-volatile memory and method with reduced bit line crosstalk errors |
US6801454B2 (en) * | 2002-10-01 | 2004-10-05 | Sandisk Corporation | Voltage generation circuitry having temperature compensation |
US6859397B2 (en) * | 2003-03-05 | 2005-02-22 | Sandisk Corporation | Source side self boosting technique for non-volatile memory |
US7237074B2 (en) * | 2003-06-13 | 2007-06-26 | Sandisk Corporation | Tracking cells for a memory system |
US7027944B2 (en) * | 2003-06-30 | 2006-04-11 | Nupower Semiconductor, Inc. | Programmable calibration circuit for power supply current sensing and droop loss compensation |
US6917542B2 (en) * | 2003-07-29 | 2005-07-12 | Sandisk Corporation | Detecting over programmed memory |
KR100515060B1 (ko) * | 2003-08-13 | 2005-09-14 | 삼성전자주식회사 | 비트 라인의 프리차지 레벨을 일정하게 유지하는 불휘발성반도체 메모리 장치 |
US7057958B2 (en) * | 2003-09-30 | 2006-06-06 | Sandisk Corporation | Method and system for temperature compensation for memory cells with temperature-dependent behavior |
US7120051B2 (en) * | 2004-12-14 | 2006-10-10 | Sandisk Corporation | Pipelined programming of non-volatile memories using early data |
US20060140007A1 (en) * | 2004-12-29 | 2006-06-29 | Raul-Adrian Cernea | Non-volatile memory and method with shared processing for an aggregate of read/write circuits |
US7190621B2 (en) * | 2005-06-03 | 2007-03-13 | Infineon Technologies Ag | Sensing scheme for a non-volatile semiconductor memory cell |
US7184313B2 (en) * | 2005-06-17 | 2007-02-27 | Saifun Semiconductors Ltd. | Method circuit and system for compensating for temperature induced margin loss in non-volatile memory cells |
US7193898B2 (en) * | 2005-06-20 | 2007-03-20 | Sandisk Corporation | Compensation currents in non-volatile memory read operations |
JP2007059024A (ja) * | 2005-08-26 | 2007-03-08 | Micron Technol Inc | 温度補償された読み出し・検証動作をフラッシュ・メモリにおいて生成するための方法及び装置 |
JP2007200233A (ja) * | 2006-01-30 | 2007-08-09 | Nec Electronics Corp | ダイオードの非直線性を補償した基準電圧回路 |
US7283414B1 (en) * | 2006-05-24 | 2007-10-16 | Sandisk 3D Llc | Method for improving the precision of a temperature-sensor circuit |
US7342831B2 (en) * | 2006-06-16 | 2008-03-11 | Sandisk Corporation | System for operating non-volatile memory using temperature compensation of voltages of unselected word lines and select gates |
US7688635B2 (en) * | 2006-07-14 | 2010-03-30 | Micron Technology, Inc. | Current sensing for Flash |
US7447079B2 (en) * | 2007-04-05 | 2008-11-04 | Sandisk Corporation | Method for sensing negative threshold voltages in non-volatile storage using current sensing |
-
2008
- 2008-09-19 US US12/233,950 patent/US7755946B2/en active Active
-
2009
- 2009-09-09 CN CN200980136731.6A patent/CN102160119B/zh active Active
- 2009-09-09 JP JP2011527874A patent/JP5444355B2/ja not_active Expired - Fee Related
- 2009-09-09 KR KR1020117008949A patent/KR101595044B1/ko not_active IP Right Cessation
- 2009-09-09 EP EP09792382.5A patent/EP2332146B1/en active Active
- 2009-09-09 WO PCT/US2009/056405 patent/WO2010033409A1/en active Application Filing
- 2009-09-14 TW TW098130966A patent/TW201027539A/zh unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9653156B2 (en) | 2015-02-20 | 2017-05-16 | Kabushiki Kaisha Toshiba | Memory controller, nonvolatile semiconductor memory device and memory system |
Also Published As
Publication number | Publication date |
---|---|
KR20110056423A (ko) | 2011-05-27 |
WO2010033409A1 (en) | 2010-03-25 |
CN102160119B (zh) | 2014-07-02 |
US20100074014A1 (en) | 2010-03-25 |
JP2012503269A (ja) | 2012-02-02 |
KR101595044B1 (ko) | 2016-02-17 |
EP2332146B1 (en) | 2014-03-05 |
TW201027539A (en) | 2010-07-16 |
US7755946B2 (en) | 2010-07-13 |
EP2332146A1 (en) | 2011-06-15 |
CN102160119A (zh) | 2011-08-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5444355B2 (ja) | 不揮発性メモリにおける検出中のデータ状態ベースの温度補償 | |
JP5470368B2 (ja) | システムノイズを取り除くために調整されたソース電圧へのプルダウンを用いる不揮発性記憶装置の検出 | |
JP5250112B2 (ja) | 不揮発性記憶装置の読み出し動作中における結合の補償 | |
JP4954223B2 (ja) | フローティングゲート結合に対する補償を伴う不揮発性記憶装置に対する読み出し動作 | |
US7489554B2 (en) | Method for current sensing with biasing of source and P-well in non-volatile storage | |
JP4778553B2 (ja) | 結合の補償を含む不揮発性記憶のための読み出し動作 | |
EP2748819B1 (en) | Read compensation for partially programmed blocks of non-volatile storage | |
EP2345038B1 (en) | Multi-pass programming for memory using word line coupling | |
KR101373795B1 (ko) | 소스 바이어스 모든 비트라인 감지를 이용하는 비휘발성 저장 요소 | |
JP5367697B2 (ja) | 不揮発性記憶装置における読み出し動作中の消費電力の低減 | |
JP5198563B2 (ja) | センシング向上のための異なる参照レベルを用いた不揮発性記憶メモリ内の雑/高精度プログラム検証 | |
JP2008536251A (ja) | 不揮発性メモリの読み出し動作中の結合の補償 | |
JP2012531693A (ja) | 自然閾値電圧分布を検出することによるメモリ内のプログラム外乱の予測 | |
JP4995273B2 (ja) | 異なる電圧を使用する不揮発性記憶装置のための検証動作 | |
KR101080394B1 (ko) | 비휘발성 저장장치에 대한 저항 감지 및 보상 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120404 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20120713 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130402 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130627 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20131217 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20131220 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5444355 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |