JP5431333B2 - 高分解能で熱放射を検出するための装置、この装置を製造する方法 - Google Patents
高分解能で熱放射を検出するための装置、この装置を製造する方法 Download PDFInfo
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- JP5431333B2 JP5431333B2 JP2010526222A JP2010526222A JP5431333B2 JP 5431333 B2 JP5431333 B2 JP 5431333B2 JP 2010526222 A JP2010526222 A JP 2010526222A JP 2010526222 A JP2010526222 A JP 2010526222A JP 5431333 B2 JP5431333 B2 JP 5431333B2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
- G01J5/024—Special manufacturing steps or sacrificial layers or layer structures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
- G01J5/0245—Shape of the cavity itself or of elements contained in or suspended over the cavity for performing thermal shunt
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/04—Casings
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/04—Casings
- G01J5/046—Materials; Selection of thermal materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
- H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49007—Indicating transducer
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- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Description
− 熱放射の検出のための装置は、小型のものである。
− 本発明により従来技術と比較して集積密度が増大する。
− 隣り合う検出素子の間のクロストークの可能性が低減される。しかし、それと同時に、個々の検出素子の感知性は維持される。
− 装置は、連結網を使用した場合に特に機械的に安定化される。
基部構造 基部構造に対して 隣接するピクセル間の
正規化された感知性 クロストーク
連結網およびスリット無し 1 33%
連結網有り 0.28 <1%
連結網およびスリット有り 0.82 <1%
連結網+スリットを有し、
基部構造が1/4に低減される 2.4 <1%
Claims (7)
- ケイ素基板の上に配置された膜(101)と、熱放射を電気信号に変換するようにそれぞれ構成され、前記膜(101)上に互いに隣り合わせに位置して装着された少なくとも2つの検出素子(11、12)とを備えた、熱放射を検出するための装置であって、熱放散通路(104)の形態の少なくとも1つのヒート・シンクが、前記膜(101)の前記検出素子(11、12)の方に向く側、および/または、前記膜(101)の前記検出素子とは逆を向く側に設けられ、前記熱放散通路(104)は、前記膜(101)よりも高い熱伝導性を有しており、熱を前記検出素子(11,12)から前記熱放散通路(104)によって排出することができるように、前記膜(101)を介して熱伝導する形で前記検出素子(11、12)に連結され、それによって前記検出素子(11、12)の応答時間が遅くなり、さらに前記膜(101)よりも低い熱伝導性を有し、前記検出素子(11、12)の間を延びる熱障壁(105)が、前記膜(101)内に組み込まれて設けられ、熱障壁(105)は互いに平行で、且つ、同じ高さで、2つの隣接する検出素子(11、12)の間を、前記2つの検出素子(11、12)の想像上の連結線に対して垂直に通る少なくとも2本のスリット(105)より成り、前記熱放散通路(104)が前記スリット(105)の間を通り、それにより前記熱放散通路(104)が検出素子(11、12)から熱的に絶縁されており、前記熱障壁(105)によって、一方の前記検出素子(11、12)から他方の前記検出素子(11、12)及び前記検出素子(11、12)から前記熱放散通路(104)への前記膜(101)内の熱伝導が防止され、それにより前記検出素子(11、12)の熱的クロストークが低くなる、装置。
- 前記熱放散通路(104)が、ケイ素製である、請求項1に記載の装置。
- 前記熱放散通路(104)が前記膜(101)上に配置された連結網(104)として形作られている、請求項2に記載の装置。
- 前記熱放散通路(104)が、前記検出素子(11、12)の少なくとも一つが中に配置された前記膜(101)の領域を取り囲む複数の連結網(104)から形成される、請求項3に記載の装置。
- 前記熱放散通路(104)が、前記膜(101)上に配置された薄膜によって形成されている、請求項1又は2に記載の装置。
- a)有向性の熱流を生成するための前記熱放散通路(104)の形態の少なくとも1つのヒート・シンクと、互いに平行で、且つ、同じ高さで通る少なくとも2本のスリット(105)より成る前記熱流を調節するための前記熱障壁(105)の形態の熱調節装置とを備え、前記熱放散通路(104)が前記スリット(105)の間を通っている膜(101)を提供するステップと、
b)2本のスリット(105)が、2つの隣接する検出素子(11、12)の間を、前記2つの検出素子(11、12)の想像上の連結線に対して垂直に通り、前記ヒート・シンクを用いて、前記ヒート・シンクの方向において前記熱検出素子の少なくとも1つから離れる有向性の熱流を生成することができ、かつ前記調節装置を用いて、前記熱流の大きさを調節することができるように、前記膜(101)上に前記検出素子(11、12)を配置するステップと、さらに
c)装置を完成するステップと
を含む、請求項1から5のいずれかに記載の装置を生産するための方法。 - 移動センサとして、存在センサとしておよび/または熱像カメラとして用いられる、請求項1又は2に記載の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102007046451.9 | 2007-09-28 | ||
DE102007046451A DE102007046451B4 (de) | 2007-09-28 | 2007-09-28 | Vorrichtung zur Detektion von Wärmestrahlung mit hoher Auflösung, Verfahren zum Herstellen und Verwendung der Vorrichtung |
PCT/EP2008/008280 WO2009043571A1 (de) | 2007-09-28 | 2008-09-29 | Vorrichtung zur detektion von wärmestrahlung mit hoher auflösung und verfahren zu deren herstellung |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010540915A JP2010540915A (ja) | 2010-12-24 |
JP2010540915A5 JP2010540915A5 (ja) | 2011-11-17 |
JP5431333B2 true JP5431333B2 (ja) | 2014-03-05 |
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JP2010526222A Expired - Fee Related JP5431333B2 (ja) | 2007-09-28 | 2008-09-29 | 高分解能で熱放射を検出するための装置、この装置を製造する方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8969811B2 (ja) |
EP (1) | EP2205950B1 (ja) |
JP (1) | JP5431333B2 (ja) |
KR (1) | KR101479915B1 (ja) |
DE (1) | DE102007046451B4 (ja) |
WO (1) | WO2009043571A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5669678B2 (ja) * | 2011-06-17 | 2015-02-12 | Tdk株式会社 | 赤外線センサ |
DE102011056610A1 (de) * | 2011-12-19 | 2013-06-20 | Pyreos Ltd. | Infrarotlichtsensorchip mit hoher Messgenauigkeit und Verfahren zum Herstellen des Infrarotlichtsensorchips |
WO2014080577A1 (ja) | 2012-11-26 | 2014-05-30 | パナソニック株式会社 | 赤外線検出装置 |
DE102013108280B3 (de) * | 2013-08-01 | 2014-10-09 | Pyreos Ltd. | Verfahren zum Herstellen eines Mikrosystems mit Pixel |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3989946A (en) * | 1975-03-31 | 1976-11-02 | Texas Instruments Incorporated | Arrays for infrared image detection |
US4740700A (en) * | 1986-09-02 | 1988-04-26 | Hughes Aircraft Company | Thermally insulative and electrically conductive interconnect and process for making same |
GB2206997A (en) * | 1987-07-10 | 1989-01-18 | Philips Electronic Associated | Arrays of pyroelectric or ferroelectric infrared detector elements |
GB9009117D0 (en) * | 1990-04-24 | 1990-08-08 | Emi Plc Thorn | Pyroelectric detector and method of manufacturing the same |
GB2282261A (en) * | 1992-09-17 | 1995-03-29 | Mitsubishi Electric Corp | Infrared detector array and production method therefor |
GB2274543A (en) * | 1993-01-21 | 1994-07-27 | Central Research Lab Ltd | Infrared detector |
JPH0743215A (ja) * | 1993-05-24 | 1995-02-14 | Mitsubishi Electric Corp | 赤外線検知素子 |
US5721430A (en) | 1995-04-13 | 1998-02-24 | Engelhard Sensor Technologies Inc. | Passive and active infrared analysis gas sensors and applicable multichannel detector assembles |
DE19525071A1 (de) * | 1995-07-10 | 1997-01-16 | Siemens Ag | Pyroelektrisches Bauelement und Verfahren zur Herstellung |
DE19735379B4 (de) * | 1997-08-14 | 2008-06-05 | Perkinelmer Optoelectronics Gmbh | Sensorsystem und Herstellungsverfahren |
JP4011851B2 (ja) * | 1997-12-18 | 2007-11-21 | 三菱電機株式会社 | 赤外線固体撮像素子 |
DE19843984B4 (de) | 1998-09-25 | 2013-10-24 | Robert Bosch Gmbh | Verfahren zur Herstellung von Strahlungssensoren |
DE19932308C2 (de) * | 1999-07-10 | 2001-10-25 | Bosch Gmbh Robert | Sensor, insbesondere Thermosensor |
JP3723386B2 (ja) * | 1999-09-17 | 2005-12-07 | 光磊科技股▲ふん▼有限公司 | マイクロタイプサーモパイル素子における熱隔離形成方法と構造 |
DE10004216C2 (de) * | 2000-02-01 | 2002-09-19 | Siemens Ag | Vorrichtung zur Detektion von Wärmestrahlung und Verwendung der Vorrichtung |
GB0220048D0 (en) | 2002-08-29 | 2002-10-09 | Melexis Nv | Infrared sensing device |
US7122797B2 (en) * | 2002-09-09 | 2006-10-17 | Sensors Unlimited, Inc. | Method for making an infrared detector and infrared detector |
US7148482B2 (en) * | 2004-03-25 | 2006-12-12 | Delphi Technologies, Inc. | Multiple sensor thermal radiation detector and method |
JP2006047085A (ja) * | 2004-08-04 | 2006-02-16 | Denso Corp | 赤外線センサ装置およびその製造方法 |
-
2007
- 2007-09-28 DE DE102007046451A patent/DE102007046451B4/de active Active
-
2008
- 2008-09-29 KR KR1020107009339A patent/KR101479915B1/ko not_active IP Right Cessation
- 2008-09-29 EP EP08802708.1A patent/EP2205950B1/de active Active
- 2008-09-29 JP JP2010526222A patent/JP5431333B2/ja not_active Expired - Fee Related
- 2008-09-29 WO PCT/EP2008/008280 patent/WO2009043571A1/de active Application Filing
- 2008-09-29 US US12/680,286 patent/US8969811B2/en active Active
Also Published As
Publication number | Publication date |
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US20110049369A1 (en) | 2011-03-03 |
EP2205950A1 (de) | 2010-07-14 |
US8969811B2 (en) | 2015-03-03 |
WO2009043571A1 (de) | 2009-04-09 |
DE102007046451B4 (de) | 2011-08-25 |
KR20100080604A (ko) | 2010-07-09 |
JP2010540915A (ja) | 2010-12-24 |
KR101479915B1 (ko) | 2015-01-07 |
DE102007046451A1 (de) | 2009-04-16 |
EP2205950B1 (de) | 2014-01-15 |
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