JP5401880B2 - 有機薄膜トランジスタおよびその製造方法 - Google Patents
有機薄膜トランジスタおよびその製造方法 Download PDFInfo
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- JP5401880B2 JP5401880B2 JP2008239474A JP2008239474A JP5401880B2 JP 5401880 B2 JP5401880 B2 JP 5401880B2 JP 2008239474 A JP2008239474 A JP 2008239474A JP 2008239474 A JP2008239474 A JP 2008239474A JP 5401880 B2 JP5401880 B2 JP 5401880B2
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- film transistor
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- thin film
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- 239000010409 thin film Substances 0.000 title claims description 46
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- 239000012776 electronic material Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 19
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 17
- 229910052796 boron Inorganic materials 0.000 claims description 17
- 229910000808 amorphous metal alloy Inorganic materials 0.000 claims description 7
- 238000000034 method Methods 0.000 description 26
- 108091006146 Channels Proteins 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
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- 239000011159 matrix material Substances 0.000 description 13
- 229910000521 B alloy Inorganic materials 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 229910052804 chromium Inorganic materials 0.000 description 10
- 239000011651 chromium Substances 0.000 description 10
- NUEWEVRJMWXXFB-UHFFFAOYSA-N chromium(iii) boride Chemical compound [Cr]=[B] NUEWEVRJMWXXFB-UHFFFAOYSA-N 0.000 description 10
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- 239000005300 metallic glass Substances 0.000 description 5
- 238000001771 vacuum deposition Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000013077 target material Substances 0.000 description 4
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical class C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052747 lanthanoid Inorganic materials 0.000 description 3
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- 238000005259 measurement Methods 0.000 description 3
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- 229920000642 polymer Polymers 0.000 description 3
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- 238000007740 vapor deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229920002457 flexible plastic Polymers 0.000 description 2
- 150000002602 lanthanoids Chemical class 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- KGCPXLHLUMOWTK-UHFFFAOYSA-N 9h-fluorene;thiophene Chemical compound C=1C=CSC=1.C1=CC=C2CC3=CC=CC=C3C2=C1 KGCPXLHLUMOWTK-UHFFFAOYSA-N 0.000 description 1
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- 229910001096 P alloy Inorganic materials 0.000 description 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XBDYBAVJXHJMNQ-UHFFFAOYSA-N Tetrahydroanthracene Natural products C1=CC=C2C=C(CCCC3)C3=CC2=C1 XBDYBAVJXHJMNQ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 150000001257 actinium Chemical class 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000005280 amorphization Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- QDWJUBJKEHXSMT-UHFFFAOYSA-N boranylidynenickel Chemical compound [Ni]#B QDWJUBJKEHXSMT-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Images
Landscapes
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
Description
ゲート電極の形成において、ターゲット材料をクロム単体とした以外は実施例1と同様にして比較例1の試料を得た。
ゲート電極の形成において、ターゲット材料をニッケル単体とした以外は実施例1と同様にして比較例2の試料を得た。
ゲート電極の形成において、ターゲットの材料をアルミニウム単体とした以外は実施例1と同様にして比較例3の試料を得た。
ゲート電極の形成において、ターゲットの材料をクロム単体とした以外は実施例5と同様にして比較例3の試料を得た。
11:ゲート電極、
12:ゲート絶縁膜、
13:有機電子材料膜
14:ドレイン電極、
15:ソース電極、
16:電流チャネル
103:X3行電極、
104:X4行電極、
106:キャパシタ、
110:有機EL素子、
116:Y2列電極、
117:Y1列電極
120、130:有機薄膜トランジスタ
Claims (4)
- 絶縁性基板と、
前記絶縁性基板上に形成されたゲート電極と、
前記ゲート電極上に形成されたゲート絶縁膜と、
前記ゲート絶縁膜上に積層され、前記ゲート絶縁膜に接する界面近傍に電流チャネルを有する有機電子材料膜と、
前記有機電子材料膜の電流チャネルに電流を流すためのソース電極およびドレイン電極と、を備え、
前記電流チャネルに流れる電流を制御する前記ゲート電極が、アモルファス金属合金よりなり、
前記アモルファス金属合金にはボロンが含まれていることを特徴とする有機薄膜トランジスタ。 - 前記ソース電極および前記ドレイン電極は、
前記ゲート絶縁膜上に形成されていることを特徴とする請求項1に記載の有機薄膜トランジスタ。 - 前記ソース電極および前記ドレイン電極は、
前記ゲート絶縁膜上に積層された前記有機電子材料膜上に形成されていることを特徴とする請求項1に記載の有機薄膜トランジスタ。 - 有機電子材料膜の電流チャネルを流れる電流をゲート電極で制御する有機薄膜トランジスタの製造方法であって、
絶縁性基板上にボロンを含むアモルファス金属合金よりなるゲート電極を形成するステップと、
前記ゲート電極の上にゲート絶縁膜を形成するステップと、
前記ゲート絶縁膜の上に前記有機電子材料膜を形成するステップと、
を備えることを特徴とする有機薄膜トランジスタの製造方法。
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JP2010073877A JP2010073877A (ja) | 2010-04-02 |
JP5401880B2 true JP5401880B2 (ja) | 2014-01-29 |
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JP2013038194A (ja) * | 2011-08-06 | 2013-02-21 | Tokyo Electron Ltd | 有機トランジスタ及びその製造方法 |
KR20200130466A (ko) * | 2018-03-30 | 2020-11-18 | 아모르픽스, 인크 | 비정질 금속 박막 트랜지스터 |
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JPS61208848A (ja) * | 1985-03-14 | 1986-09-17 | Toshiba Corp | 半導体装置 |
JP2005079203A (ja) * | 2003-08-28 | 2005-03-24 | Canon Inc | 電界効果型トランジスタおよびその製造方法 |
JP2006093191A (ja) * | 2004-09-21 | 2006-04-06 | Konica Minolta Holdings Inc | 有機薄膜トランジスタ、有機薄膜トランジスタシート及びこれらの製造方法 |
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