JP5371143B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP5371143B2 JP5371143B2 JP2007265332A JP2007265332A JP5371143B2 JP 5371143 B2 JP5371143 B2 JP 5371143B2 JP 2007265332 A JP2007265332 A JP 2007265332A JP 2007265332 A JP2007265332 A JP 2007265332A JP 5371143 B2 JP5371143 B2 JP 5371143B2
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- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
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- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
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- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
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- 239000009719 polyimide resin Substances 0.000 description 1
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- 238000010298 pulverizing process Methods 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
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- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
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- 229910052707 ruthenium Inorganic materials 0.000 description 1
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- 239000012266 salt solution Substances 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- 229940056910 silver sulfide Drugs 0.000 description 1
- XUARKZBEFFVFRG-UHFFFAOYSA-N silver sulfide Chemical compound [S-2].[Ag+].[Ag+] XUARKZBEFFVFRG-UHFFFAOYSA-N 0.000 description 1
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- 229910052712 strontium Inorganic materials 0.000 description 1
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- HLWCOIUDOLYBGD-UHFFFAOYSA-N trichloro(decyl)silane Chemical compound CCCCCCCCCC[Si](Cl)(Cl)Cl HLWCOIUDOLYBGD-UHFFFAOYSA-N 0.000 description 1
- ADBSXCRGUFFLBC-UHFFFAOYSA-N trichloro(docosyl)silane Chemical compound CCCCCCCCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl ADBSXCRGUFFLBC-UHFFFAOYSA-N 0.000 description 1
- JIWLOZPAQDZWQN-UHFFFAOYSA-N trichloro(icosyl)silane Chemical compound CCCCCCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl JIWLOZPAQDZWQN-UHFFFAOYSA-N 0.000 description 1
- PYJJCSYBSYXGQQ-UHFFFAOYSA-N trichloro(octadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl PYJJCSYBSYXGQQ-UHFFFAOYSA-N 0.000 description 1
- LPMVYGAHBSNGHP-UHFFFAOYSA-N trichloro(tetradecyl)silane Chemical compound CCCCCCCCCCCCCC[Si](Cl)(Cl)Cl LPMVYGAHBSNGHP-UHFFFAOYSA-N 0.000 description 1
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- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
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Images
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- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Electrodes Of Semiconductors (AREA)
Description
本実施の形態では、確実により簡略化した工程で低コストに作製することを目的としたコンタクトホールの形成方法について、図1を用いて説明する。
本実施の形態では、確実により簡略化した工程で低コストに作製することを目的とした積層構造のコンタクトホールを形成する方法について説明する。詳しくは実施の形態1において、コンタクトホールが複数の積層する膜に亘って形成される例である。従って、同一部分又は同様な機能を有する部分は実施の形態1と同様な材料及び方法を用いればよく、その繰り返しの説明は省略する。
本実施の形態では、簡略化した工程で低コストに作製することを目的とした表示装置の作製方法について、図35を用いて説明する。
図25(A)は本発明に係る表示パネルの構成を示す平面図であり、絶縁表面を有する基板2700上に画素2702をマトリクス上に配列させた画素部2701、走査線側入力端子2703、信号線側入力端子2704が形成されている。画素数は種々の規格に従って設ければ良く、XGAであってRGBを用いたフルカラー表示であれば1024×768×3(RGB)、UXGAであってRGBを用いたフルカラー表示であれば1600×1200×3(RGB)、フルスペックハイビジョンに対応させ、RGBを用いたフルカラー表示であれば1920×1080×3(RGB)とすれば良い。
本実施の形態では、より簡略化した工程で低コストに作製することを目的とした表示装置の例について説明する。詳しくは表示素子に発光素子を用いる発光表示装置について説明する。本実施の形態における表示装置の作製方法を、図15を用いて詳細に説明する。
本発明を適用して薄膜トランジスタを形成し、該薄膜トランジスタを用いて表示装置を形成することができるが、発光素子を用いて、なおかつ、該発光素子を駆動するトランジスタとしてnチャネル型トランジスタを用いた場合、該発光素子から発せられる光は、下方放射、上方放射、両方放射のいずれかを行う。ここでは、それぞれの場合に応じた発光素子の積層構造について、図17を用いて説明する。
本実施の形態では、より簡略化した工程で低コストに作製することを目的とした表示装置の例について説明する。詳しくは表示素子に発光素子を用いる発光表示装置について説明する。本実施の形態では、本発明の表示装置の表示素子として適用することのできる発光素子の構成を、図22を用いて説明する。
本実施の形態では、より簡略化した工程で低コストに作製することを目的とした表示装置の例について説明する。詳しくは表示素子に発光素子を用いる発光表示装置について説明する。本実施の形態では、本発明の表示装置の表示素子として適用することのできる発光素子の構成を、図23及び図24を用いて説明する。
本実施の形態では、より簡略化した工程で低コストに作製することを目的とした表示装置の例について説明する。詳しくは表示素子に液晶表示素子を用いる液晶表示装置について説明する。
本実施の形態では、より簡略化した工程で低コストに作製することを目的とした表示装置の例について説明する。詳しくは表示素子に液晶表示素子を用いる液晶表示装置について説明する。
本実施の形態では、より簡略化した工程で低コストに作製することを目的とした表示装置の一例について説明する。
次に、実施の形態4乃至11によって作製される表示パネルに駆動用のドライバ回路を実装する態様について説明する。
実施の形態4乃至11によって作製される表示パネル(EL表示パネル、液晶表示パネル)において、半導体層を非晶質半導体、又はSASで形成し、走査線側の駆動回路を基板上に形成する例を示す。
本実施の形態を図16を用いて説明する。図16は、本発明を適用して作製されるTFT基板2800を用いてEL表示モジュールを構成する一例を示している。図16において、TFT基板2800上には、画素により構成された画素部が形成されている。
本実施の形態を図20(A)及び図20(B)を用いて説明する。図20(A)、図20(B)は、本発明を適用して作製されるTFT基板2600を用いて液晶表示モジュールを構成する一例を示している。
本発明によって形成される表示装置によって、テレビジョン装置(単にテレビ、又はテレビジョン受信機ともよぶ)を完成させることができる。図27はテレビジョン装置の主要な構成を示すブロック図を示している。
本発明に係る電子機器として、テレビジョン装置(単にテレビ、又はテレビジョン受信機ともよぶ)、デジタルカメラ、デジタルビデオカメラ、携帯電話装置(単に携帯電話機、携帯電話ともよぶ)、PDA等の携帯情報端末、携帯型ゲーム機、コンピュータ用のモニタ、コンピュータ、カーオーディオ等の音響再生装置、家庭用ゲーム機等の記録媒体を備えた画像再生装置等が挙げられる。その具体例について、図29を参照して説明する。
Claims (7)
- ゲート電極層と、ゲート絶縁層と、半導体層と、ソース電極層と、ドレイン電極層と、を形成し、
前記ソース電極層及び前記ドレイン電極層上に第1の絶縁層を形成し、
前記第1の絶縁層上に第2の絶縁層を形成し、
前記第2の絶縁層にチューブを挿入し第1の開口を形成し、
前記チューブより処理剤を吐出し前記第1の絶縁層に前記ソース電極層及び前記ドレイン電極層に達する第2の開口を形成することを特徴とする半導体装置の作製方法。 - ゲート電極層と、ゲート絶縁層と、半導体層と、ソース電極層と、ドレイン電極層と、を形成し、
前記ソース電極層及び前記ドレイン電極層上に第1の絶縁層を形成し、
前記第1の絶縁層上に第2の絶縁層を形成し、
前記第2の絶縁層にチューブを挿入し第1の開口を形成し、
前記チューブより処理剤を吐出し前記第1の絶縁層に前記ソース電極層及び前記ドレイン電極層に達する第2の開口を形成し、
前記第1の開口及び前記第2の開口に前記ソース電極層及び前記ドレイン電極層と接するように導電膜を形成することを特徴とする半導体装置の作製方法。 - ゲート電極層と、ゲート絶縁層と、半導体層と、ソース電極層と、ドレイン電極層と、を形成し、
前記ソース電極層及び前記ドレイン電極層上に第1の絶縁層を形成し、
前記第1の絶縁層上に第2の絶縁層を形成し、
前記第2の絶縁層にチューブを挿入し第1の開口を形成し、
前記チューブより処理剤を吐出し前記第1の絶縁層に前記ソース電極層及び前記ドレイン電極層に達する第2の開口を形成し、
前記第1の開口及び前記第2の開口に前記チューブより導電性材料を含む組成物を吐出し前記ソース電極層及び前記ドレイン電極層と接するように導電膜を形成することを特徴とする半導体装置の作製方法。 - 請求項1乃至3のいずれか一項において、
前記処理剤を前記チューブより吐出後、前記チューブから吸引し除去することを特徴とする半導体装置の作製方法。 - 請求項1乃至3のいずれか一項において、
前記チューブは、第1のチューブと前記第1のチューブの内側に設けられた第2のチューブからなる二重構造を有し、
前記第2のチューブから処理剤を吐出すると同時に、前記第1のチューブと前記第2のチューブとの間を通じて前記処理剤を吸引し除去することを特徴とする半導体装置の作製方法。 - 請求項1乃至5のいずれか一項において、
前記チューブは、ドーム状、針状または柱状であることを特徴とする半導体装置の作製方法。 - 請求項1乃至6のいずれか一項において、
前記処理剤は、エッチングガス、またはエッチング液を用いることを特徴とする半導体装置の作製方法。
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