JP5361719B2 - 短絡保護層を有する高濃度ドープ電気光学活性有機ダイオード - Google Patents
短絡保護層を有する高濃度ドープ電気光学活性有機ダイオード Download PDFInfo
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- JP5361719B2 JP5361719B2 JP2009520107A JP2009520107A JP5361719B2 JP 5361719 B2 JP5361719 B2 JP 5361719B2 JP 2009520107 A JP2009520107 A JP 2009520107A JP 2009520107 A JP2009520107 A JP 2009520107A JP 5361719 B2 JP5361719 B2 JP 5361719B2
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- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- RJWLRCHYHHXJLX-UHFFFAOYSA-N barium(2+);selenium(2-) Chemical class [Se-2].[Ba+2] RJWLRCHYHHXJLX-UHFFFAOYSA-N 0.000 description 1
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- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
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- YWDGEUIDOIIHTK-UHFFFAOYSA-N selanylidenebarium Chemical compound [Ba]=[Se] YWDGEUIDOIIHTK-UHFFFAOYSA-N 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/155—Hole transporting layers comprising dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
- H10K50/165—Electron transporting layers comprising dopants
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Photovoltaic Devices (AREA)
- Led Devices (AREA)
Description
102,302 アノード層
110,210,310 電気光学活性有機層
116,316a,316b 電荷キャリア有機層
120,320 無機短絡保護層
122,322 カソード層
324 カバー層
Claims (11)
- アノード電極層と、
カソード電極層と、
前記電極層間に配置された電気光学活性有機層と、
前記電気光学活性有機層と前記カソード電極層との間に配置され、前記電気光学活性有機層に隣接した電荷キャリア有機層とを備え、この電荷キャリア有機層が、ドープされた有機半導体材料から形成されており、そのドーパントが有機分子であり、ドーピング濃度が、1:10000から1:10の範囲である、電気光学活性有機ダイオードであって、
前記カソード電極層と前記電荷キャリア有機層との間に配置され、前記カソード電極層に隣接する短絡保護層を備え、この短絡保護層は、無機半導体材料によって形成されており、導電性を有し、100Åから1000Åの範囲の厚さを有することを特徴とする、電気光学活性有機ダイオード。 - 前記無機半導体材料は、前記カソード層の材料の融点よりも高い融点を有する、請求項1に記載の有機ダイオード。
- 前記無機半導体材料は、2.7eVより大きいバンドギャップを有する、請求項1又は2に記載の有機ダイオード。
- 前記無機半導体材料は、0.5eV〜3.5eVの間の電子親和力を有する、請求項1〜3のうちのいずれか1項に記載の有機ダイオード。
- 前記無機半導体材料は、1より大きい誘電率を有する、請求項1〜4のうちのいずれか1項に記載の有機ダイオード。
- 前記無機半導体材料は、アルカリ土類金属又はランタノイドのカルコゲニド又は二元酸化物を含む、請求項1〜5のうちのいずれか1項に記載の有機ダイオード。
- 前記短絡保護層は200Åよりも厚い厚さを有する、請求項1〜6のうちのいずれか1項に記載の有機ダイオード。
- 前記電荷キャリア有機層とカバー層との間に前記カソード層が位置するように前記カソード層の表面に接触した状態で配置された前記カバー層を更に含み、前記カバー層は、このカバー層に接触するカソード層の材料に対して不活性な材料から形成されており、前記不活性な材料は、前記カソード層の表面全体がカバーされ、表面欠陥が解消されるように、前記カソード層の表面に配置されている、請求項1〜7のうちのいずれか1項に記載の有機ダイオード。
- 請求項1〜8のうちのいずれか1項に記載の有機ダイオードを含む照明デバイス。
- 請求項1〜7のうちのいずれか1項に記載の有機ダイオードを含むディスプレイデバイス。
- 請求項1〜7のうちのいずれか1項に記載の有機ダイオードを含む有機太陽電池デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP06117443 | 2006-07-19 | ||
EP06117443.9 | 2006-07-19 | ||
PCT/IB2007/052802 WO2008010171A2 (en) | 2006-07-19 | 2007-07-13 | Highly doped electro-optically active organic diode with short protection layer |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009544164A JP2009544164A (ja) | 2009-12-10 |
JP5361719B2 true JP5361719B2 (ja) | 2013-12-04 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2009520107A Active JP5361719B2 (ja) | 2006-07-19 | 2007-07-13 | 短絡保護層を有する高濃度ドープ電気光学活性有機ダイオード |
Country Status (8)
Country | Link |
---|---|
US (1) | US8692460B2 (ja) |
EP (1) | EP2047535A2 (ja) |
JP (1) | JP5361719B2 (ja) |
KR (1) | KR20090034987A (ja) |
CN (1) | CN101490865B (ja) |
BR (1) | BRPI0715585A2 (ja) |
TW (1) | TWI447979B (ja) |
WO (1) | WO2008010171A2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI579903B (zh) * | 2013-01-15 | 2017-04-21 | 財團法人國家實驗研究院 | 半導體摻雜方法 |
KR101946999B1 (ko) * | 2014-05-12 | 2019-02-12 | 엘지디스플레이 주식회사 | 유기발광소자 및 이의 제조방법 |
Family Cites Families (19)
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JP3253740B2 (ja) * | 1993-04-05 | 2002-02-04 | パイオニア株式会社 | 有機エレクトロルミネッセンス素子 |
US20050158579A1 (en) * | 1996-06-25 | 2005-07-21 | Marks Tobin J. | Organic light-emitting diodes and methods for assembly and enhanced charge injection |
JP3691192B2 (ja) * | 1997-01-31 | 2005-08-31 | 三洋電機株式会社 | 有機エレクトロルミネッセンス素子 |
JP3266573B2 (ja) * | 1998-04-08 | 2002-03-18 | 出光興産株式会社 | 有機エレクトロルミネッセンス素子 |
US6525466B1 (en) | 1999-04-09 | 2003-02-25 | Arizona Board Of Regents On Behalf Of The University Of Arizona | Cathode including a mixture of a metal and an insulator for organic devices and method of making the same |
DE10058578C2 (de) | 2000-11-20 | 2002-11-28 | Univ Dresden Tech | Lichtemittierendes Bauelement mit organischen Schichten |
US6828045B1 (en) * | 2003-06-13 | 2004-12-07 | Idemitsu Kosan Co., Ltd. | Organic electroluminescence element and production method thereof |
DE10207859A1 (de) | 2002-02-20 | 2003-09-04 | Univ Dresden Tech | Dotiertes organisches Halbleitermaterial sowie Verfahren zu dessen Herstellung |
DE10215210B4 (de) | 2002-03-28 | 2006-07-13 | Novaled Gmbh | Transparentes, thermisch stabiles lichtemittierendes Bauelement mit organischen Schichten |
JP4646494B2 (ja) * | 2002-04-11 | 2011-03-09 | 出光興産株式会社 | 新規含窒素複素環誘導体及びそれを用いた有機エレクトロルミネッセンス素子 |
JP4170655B2 (ja) * | 2002-04-17 | 2008-10-22 | 出光興産株式会社 | 新規芳香族化合物及びそれを利用した有機エレクトロルミネッセンス素子 |
JP4174332B2 (ja) * | 2003-01-23 | 2008-10-29 | 財団法人国際超電導産業技術研究センター | 酸化物超電導体の製造方法及び酸化物超電導体とその前駆体支持用基材 |
JP2005044799A (ja) | 2003-07-10 | 2005-02-17 | Dainippon Printing Co Ltd | 有機電界発光素子 |
US6953705B2 (en) | 2003-07-22 | 2005-10-11 | E. I. Du Pont De Nemours And Company | Process for removing an organic layer during fabrication of an organic electronic device |
JP4366686B2 (ja) * | 2003-10-29 | 2009-11-18 | 富士電機ホールディングス株式会社 | 有機el素子の製造方法 |
JP5137292B2 (ja) * | 2003-12-26 | 2013-02-06 | 株式会社半導体エネルギー研究所 | 発光素子、発光装置および電気器具 |
CN101673808B (zh) | 2003-12-26 | 2012-05-23 | 株式会社半导体能源研究所 | 发光元件 |
KR101106920B1 (ko) * | 2004-03-05 | 2012-01-25 | 이데미쓰 고산 가부시키가이샤 | 유기 전계 발광 표시 장치 |
KR100672535B1 (ko) * | 2005-07-25 | 2007-01-24 | 엘지전자 주식회사 | 유기 el 소자 및 그 제조방법 |
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2007
- 2007-07-13 CN CN2007800274245A patent/CN101490865B/zh active Active
- 2007-07-13 KR KR1020097003336A patent/KR20090034987A/ko not_active Application Discontinuation
- 2007-07-13 WO PCT/IB2007/052802 patent/WO2008010171A2/en active Application Filing
- 2007-07-13 BR BRPI0715585-9A patent/BRPI0715585A2/pt not_active IP Right Cessation
- 2007-07-13 JP JP2009520107A patent/JP5361719B2/ja active Active
- 2007-07-13 US US12/373,536 patent/US8692460B2/en active Active
- 2007-07-13 EP EP07805145A patent/EP2047535A2/en not_active Withdrawn
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Also Published As
Publication number | Publication date |
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CN101490865B (zh) | 2011-09-07 |
WO2008010171A2 (en) | 2008-01-24 |
TWI447979B (zh) | 2014-08-01 |
BRPI0715585A2 (pt) | 2013-03-26 |
US8692460B2 (en) | 2014-04-08 |
EP2047535A2 (en) | 2009-04-15 |
US20090174323A1 (en) | 2009-07-09 |
JP2009544164A (ja) | 2009-12-10 |
TW200814384A (en) | 2008-03-16 |
WO2008010171A3 (en) | 2008-04-03 |
KR20090034987A (ko) | 2009-04-08 |
CN101490865A (zh) | 2009-07-22 |
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