JP2009544164A - 短絡保護層を有する高濃度ドープ電気光学活性有機ダイオード - Google Patents
短絡保護層を有する高濃度ドープ電気光学活性有機ダイオード Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/155—Hole transporting layers comprising dopants
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
- H10K50/165—Electron transporting layers comprising dopants
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- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Photovoltaic Devices (AREA)
- Led Devices (AREA)
Abstract
【選択図】図1
Description
102,302 アノード層
110,210,310 電気光学活性有機層
116,316a,316b 電荷キャリア有機層
120,320 無機短絡保護層
122,322 カソード層
324 カバー層
Claims (12)
- アノード電極層と、
カソード電極層と、
前記電極層間に配置された電気光学活性有機層と、
前記電気光学活性有機層と前記カソード電極層との間に配置され、前記電気光学活性有機層に隣接した電荷キャリア有機層とを備え、この電荷キャリア有機層が、高濃度にドープされた有機半導体材料から形成されている、電気光学活性有機ダイオードであって、
前記カソード電極層と前記電荷キャリア有機層との間に配置され、前記カソード電極層に隣接する短絡保護層を備え、この短絡保護層は、無機半導体材料によって形成されていることを特徴とする、電気光学活性有機ダイオード。 - 前記短絡保護層は導電性を有する、請求項1に記載の有機ダイオード。
- 前記無機半導体材料は、前記カソード層の材料の融点よりも高い融点を有する、請求項1または2に記載の有機ダイオード。
- 前記無機半導体材料は、2.7eVより大きいバンドギャップ、好ましくは3eVより大きいバンドギャップを有する、請求項1〜3のうちのいずれか1項に記載の有機ダイオード。
- 前記無機半導体材料は、0.5eV〜3.5eVの間の電子親和力を有する、請求項1〜4のうちのいずれか1項に記載の有機ダイオード。
- 前記無機半導体材料は、1より大きい誘電率、好ましくは10より大きい誘電率、より好ましくは30より大きい誘電率を有する、請求項1〜5のうちのいずれか1項に記載の有機ダイオード。
- 前記無機半導体材料は、アルカリ土類金属又はランタノイドのカルコゲニド又は二元酸化物、好ましくはBaO、BaSe、La2O3またはCe2O3を含む、請求項1〜6のうちのいずれか1項に記載の有機ダイオード。
- 前記短絡保護層は少なくとも50Åの厚さ、好ましくは200Åよりも厚い厚さを有する、請求項1〜7のうちのいずれか1項に記載の有機ダイオード。
- 前記電荷キャリア有機層とカバー層との間に前記カソード層が位置するように前記カソード層の表面に接触した状態で配置された前記カバー層を更に含み、前記カバー層は、このカバー層に接触するカソード層の材料に対して実質的に不活性な材料から形成されており、前記不活性な材料は、前記カソード層の表面全体がカバーされ、表面欠陥が解消されるように、前記カソード層の表面に配置されている、請求項1〜8のうちのいずれか1項に記載の有機ダイオード。
- 請求項1〜9のうちのいずれか1項に記載の有機ダイオードを含む照明デバイス、例えばランプ。
- 請求項1〜9のうちのいずれか1項に記載の有機ダイオードを含むディスプレイデバイス。
- 請求項1〜9のうちのいずれか1項に記載の有機ダイオードを含む有機太陽電池デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP06117443 | 2006-07-19 | ||
EP06117443.9 | 2006-07-19 | ||
PCT/IB2007/052802 WO2008010171A2 (en) | 2006-07-19 | 2007-07-13 | Highly doped electro-optically active organic diode with short protection layer |
Publications (2)
Publication Number | Publication Date |
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JP2009544164A true JP2009544164A (ja) | 2009-12-10 |
JP5361719B2 JP5361719B2 (ja) | 2013-12-04 |
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JP2009520107A Active JP5361719B2 (ja) | 2006-07-19 | 2007-07-13 | 短絡保護層を有する高濃度ドープ電気光学活性有機ダイオード |
Country Status (8)
Country | Link |
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US (1) | US8692460B2 (ja) |
EP (1) | EP2047535A2 (ja) |
JP (1) | JP5361719B2 (ja) |
KR (1) | KR20090034987A (ja) |
CN (1) | CN101490865B (ja) |
BR (1) | BRPI0715585A2 (ja) |
TW (1) | TWI447979B (ja) |
WO (1) | WO2008010171A2 (ja) |
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TWI579903B (zh) * | 2013-01-15 | 2017-04-21 | 財團法人國家實驗研究院 | 半導體摻雜方法 |
KR101946999B1 (ko) * | 2014-05-12 | 2019-02-12 | 엘지디스플레이 주식회사 | 유기발광소자 및 이의 제조방법 |
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DE10058578C2 (de) | 2000-11-20 | 2002-11-28 | Univ Dresden Tech | Lichtemittierendes Bauelement mit organischen Schichten |
US6828045B1 (en) * | 2003-06-13 | 2004-12-07 | Idemitsu Kosan Co., Ltd. | Organic electroluminescence element and production method thereof |
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CN101673808B (zh) | 2003-12-26 | 2012-05-23 | 株式会社半导体能源研究所 | 发光元件 |
KR101106920B1 (ko) * | 2004-03-05 | 2012-01-25 | 이데미쓰 고산 가부시키가이샤 | 유기 전계 발광 표시 장치 |
KR100672535B1 (ko) * | 2005-07-25 | 2007-01-24 | 엘지전자 주식회사 | 유기 el 소자 및 그 제조방법 |
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2007
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JPH06295788A (ja) * | 1993-04-05 | 1994-10-21 | Pioneer Electron Corp | 有機エレクトロルミネッセンス素子 |
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Also Published As
Publication number | Publication date |
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CN101490865B (zh) | 2011-09-07 |
WO2008010171A2 (en) | 2008-01-24 |
TWI447979B (zh) | 2014-08-01 |
BRPI0715585A2 (pt) | 2013-03-26 |
US8692460B2 (en) | 2014-04-08 |
EP2047535A2 (en) | 2009-04-15 |
US20090174323A1 (en) | 2009-07-09 |
TW200814384A (en) | 2008-03-16 |
WO2008010171A3 (en) | 2008-04-03 |
JP5361719B2 (ja) | 2013-12-04 |
KR20090034987A (ko) | 2009-04-08 |
CN101490865A (zh) | 2009-07-22 |
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