JP5359614B2 - 入出力インターフェース回路、集積回路装置および電子機器 - Google Patents
入出力インターフェース回路、集積回路装置および電子機器 Download PDFInfo
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- JP5359614B2 JP5359614B2 JP2009156539A JP2009156539A JP5359614B2 JP 5359614 B2 JP5359614 B2 JP 5359614B2 JP 2009156539 A JP2009156539 A JP 2009156539A JP 2009156539 A JP2009156539 A JP 2009156539A JP 5359614 B2 JP5359614 B2 JP 5359614B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
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- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
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Description
本発明にかかる集積回路装置(IC)は信頼性に優れるため、本発明にかかる集積回路装置(IC)を搭載する電子機器の信頼性も同様に向上する。
図3は、入出力インターフェース回路におけるラッチアップについて説明するための図である。図3に示される入出力インターフェース回路400は、集積回路装置(IC)410に設けられており、集積回路装置(IC)410は、電子機器420に搭載されている。
次に、図3の入出力インターフェース回路に生じるラッチアップについて、図4を用いて説明する。図4は、図3の入出力インターフェース回路において生じる寄生サイリスタを示す回路図である。図4においては、VDD端子T2に入力される電源電圧VDDが0Vになっている。
以下、本発明の第1の実施形態について説明する。図1は、本発明の入出力インターフェース回路の構成例(ならびに、この入出力インターフェース回路を有する集積回路装置の構成例)を示す図である。図1において、図3と共通する部分には、共通の参照符号を付してある。
106 ロジック回路、INV1 出力バッファー(例えばCMOSバッファー)、
108 フローティングウエル電位調整回路(フローティングNウエル電位調整回路,基板電位調整回路)、
400 入出力インターフェース回路、410 集積回路装置(IC)、
420 電子機器、T1 入出力端子、T2 高レベル電源電圧端子(VDD端子)、
R1 第1抵抗(第1静電保護抵抗あるいは第1入力抵抗)、
R2 第2抵抗(第2静電保護抵抗あるいは第2入力抵抗)、
D1,D2 保護ダイオード
Claims (4)
- 信号の入力および出力のための入出力端子と、
前記入出力端子を経由して外部から入力される信号を受ける入力バッファーと、
フローティングウエル領域に形成される第1導電型の第1MOSトランジスタを有すると共に、前記入出力端子を経由して外部に信号を出力するための出力バッファーと、
前記入出力端子と高レベル電源電位との間に接続される静電保護回路と、
前記フローティグウエル領域の電位を調整するためのフローティングウエル電位調整回路と、を含み、
前記静電保護回路は、
前記入出力端子に一端が接続される第1抵抗と、前記第1抵抗の他端と前記高レベル電源電位との間に接続されるダイオードと、を有し、
前記フローティングウエル電位調整回路は、
前記入出力端子に一端が接続される第2抵抗と、前記第2抵抗の他端に一端が接続され、他端が前記フローティングウエル領域に接続され、ゲートに前記高レベル電源電位が接続される、第1導電型の第2MOSトランジスタと、
を有することを特徴とする入出力インターフェース回路。 - 請求項1記載の入出力インターフェース回路であって、
前記フローティングウエル電位調整回路は、さらに、
前記第2抵抗の他端にゲートが接続され、一端が前記高レベル電源電位に接続され、他端が前記フローティングウエル領域に接続される、第1導電型の第3MOSトランジスタを、有することを特徴とする入出力インターフェース回路。 - 請求項1または請求項2記載の入出力インターフェース回路を含むことを特徴とする集積回路装置。
- 請求項3記載の集積回路装置を含むことを特徴とする電子機器。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009156539A JP5359614B2 (ja) | 2009-07-01 | 2009-07-01 | 入出力インターフェース回路、集積回路装置および電子機器 |
US12/726,722 US8228650B2 (en) | 2009-07-01 | 2010-03-18 | Input-output interface circuit, integrated circuit device and electronic apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2009156539A JP5359614B2 (ja) | 2009-07-01 | 2009-07-01 | 入出力インターフェース回路、集積回路装置および電子機器 |
Publications (2)
Publication Number | Publication Date |
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JP2011015111A JP2011015111A (ja) | 2011-01-20 |
JP5359614B2 true JP5359614B2 (ja) | 2013-12-04 |
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JP2009156539A Active JP5359614B2 (ja) | 2009-07-01 | 2009-07-01 | 入出力インターフェース回路、集積回路装置および電子機器 |
Country Status (2)
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US (1) | US8228650B2 (ja) |
JP (1) | JP5359614B2 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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US20130260245A1 (en) | 2010-12-17 | 2013-10-03 | Sumitomo Osaka Cement Co., Ltd. | Electrode material and method for producing the same |
CN103972225B (zh) * | 2013-02-04 | 2019-01-08 | 联华电子股份有限公司 | 具有静电放电防护功效的晶体管结构 |
JP6003759B2 (ja) * | 2013-03-26 | 2016-10-05 | 株式会社ソシオネクスト | スイッチ回路、及び、半導体記憶装置 |
WO2015001618A1 (ja) * | 2013-07-02 | 2015-01-08 | 三菱電機株式会社 | 逆流防止装置、電力変換装置及び冷凍空気調和装置 |
JP2015180050A (ja) * | 2014-02-26 | 2015-10-08 | セイコーエプソン株式会社 | 半導体集積回路装置及びそれを用いた電子機器 |
CN105720968A (zh) * | 2016-01-15 | 2016-06-29 | 中山芯达电子科技有限公司 | 抗静电储能电路 |
US20200194459A1 (en) * | 2018-12-18 | 2020-06-18 | Vanguard International Semiconductor Corporation | Semiconductor devices and methods for fabricating the same |
JP7439627B2 (ja) | 2020-04-07 | 2024-02-28 | セイコーエプソン株式会社 | Cmos出力回路、半導体装置、電子機器および移動体 |
CN112288069B (zh) * | 2020-10-29 | 2024-01-09 | 努比亚技术有限公司 | 一种价签基站供电电路和价签基站 |
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JPH11355124A (ja) * | 1998-06-12 | 1999-12-24 | Hitachi Ltd | 入出力バッファ回路装置 |
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JP2003007833A (ja) * | 2001-06-25 | 2003-01-10 | Nec Corp | 半導体装置 |
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KR100495667B1 (ko) * | 2003-01-13 | 2005-06-16 | 삼성전자주식회사 | 아날로그/디지털 입력 모드를 제공하는 입출력 버퍼 |
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-
2009
- 2009-07-01 JP JP2009156539A patent/JP5359614B2/ja active Active
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2010
- 2010-03-18 US US12/726,722 patent/US8228650B2/en active Active
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JP2011015111A (ja) | 2011-01-20 |
US20110002072A1 (en) | 2011-01-06 |
US8228650B2 (en) | 2012-07-24 |
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