JP5354383B2 - 電子装置の製造方法 - Google Patents
電子装置の製造方法 Download PDFInfo
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- JP5354383B2 JP5354383B2 JP2009532165A JP2009532165A JP5354383B2 JP 5354383 B2 JP5354383 B2 JP 5354383B2 JP 2009532165 A JP2009532165 A JP 2009532165A JP 2009532165 A JP2009532165 A JP 2009532165A JP 5354383 B2 JP5354383 B2 JP 5354383B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 75
- 239000011248 coating agent Substances 0.000 claims description 167
- 238000000576 coating method Methods 0.000 claims description 167
- 239000011347 resin Substances 0.000 claims description 70
- 229920005989 resin Polymers 0.000 claims description 70
- 239000000758 substrate Substances 0.000 claims description 64
- 238000000034 method Methods 0.000 claims description 38
- 229910052782 aluminium Inorganic materials 0.000 claims description 34
- 238000005530 etching Methods 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 239000002184 metal Substances 0.000 claims description 29
- 238000004544 sputter deposition Methods 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 12
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- 238000001312 dry etching Methods 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 7
- 239000012212 insulator Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 238000011161 development Methods 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 260
- 239000011521 glass Substances 0.000 description 34
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 30
- 239000010409 thin film Substances 0.000 description 23
- 239000010949 copper Substances 0.000 description 19
- 238000001755 magnetron sputter deposition Methods 0.000 description 15
- 239000007789 gas Substances 0.000 description 11
- 239000000243 solution Substances 0.000 description 11
- 238000007772 electroless plating Methods 0.000 description 7
- 238000007747 plating Methods 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000005291 magnetic effect Effects 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 239000002907 paramagnetic material Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000005298 paramagnetic effect Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/04—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
- H05K3/046—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer
- H05K3/048—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer using a lift-off resist pattern or a release layer pattern
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0331—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers for lift-off processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/107—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by filling grooves in the support with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0166—Polymeric layer used for special processing, e.g. resist for etching insulating material or photoresist used as a mask during plasma etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0175—Inorganic, non-metallic layer, e.g. resist or dielectric for printed capacitor
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Thin Film Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electrodes Of Semiconductors (AREA)
Description
11 透明樹脂膜(透明レジスト)
12 アルミニウム膜(ゲート電極)
12a 溝
14 ゲート絶縁膜
141、14a、14b 絶縁性塗布膜
142 誘電体膜
15 g線レジスト膜
161 半導体層
162 半導体層
17 ソース電極
18 ドレイン電極
19 パターニング用レジスト
20 絶縁膜(Si3N4)
50 マグネトロンスパッタリング装置
51 ターゲット
52 柱状回転軸
53 螺旋状板磁石群(回転磁石群)
54 固定外周板磁石
55 外周常磁性体
56 バッキングプレート
58 通路
59 絶縁材
60 被処理基板
61 処理室内空間
62 フィーダ線
63 カバー
64 外壁
65 常磁性体
66 プラズマ遮蔽部材
71 垂直可動機構
112 Cu膜
112−1 Cu膜
112−2 Cu膜
112−3 Cu膜
114 多孔質絶縁性塗布膜
124 無孔質絶縁性塗布膜
((CH3)nSiO2−n/2)x(SiO2)1−x (但し、n=1〜3、x≦1)
であらわされる化合物組成を含む塗布膜であることが望ましい。絶縁性塗布膜14aは第1塗布膜と呼ぶこともできる。あるいは、絶縁性塗布膜14aは、Si、Ti、Al、Zrの酸化物を一種又は、二種以上含有する多孔質塗布膜にすることも可能である。絶縁性塗布膜14aの厚さは300〜2,000nmが適当である。本例では700nmとした。さらにその上にg線レジスト膜15を400〜2,000nm厚で設ける。g線レジスト膜15を露光・現像して、溝となるべき部分の絶縁性塗布膜14a表面を露出させる。
Claims (16)
- 基板と、該基板上に形成された透明樹脂膜と、該透明樹脂膜に選択的に埋設された金属膜とを備えた電子装置の製造方法において、
前記透明樹脂膜上に絶縁物塗布膜を形成する工程と、
前記塗布膜と前記透明樹脂膜とに選択的に溝を形成する工程と、
スパッタによって前記溝内及び前記塗布膜上を含む全面に金属膜を形成する工程と、
前記塗布膜をエッチング除去することで、前記塗布膜上の金属膜をリフトオフして、前記溝に前記金属膜が埋設された構成を得る工程と、
を含み、
前記塗布膜は、Si、Ti、Al、Zrの酸化物を一種又は、二種以上含有する多孔質塗布膜を含むことを特徴とする電子装置の製造方法。 - 請求項1に記載の電子装置の製造方法において、前記塗布膜は、((CH3)nSiO2−n/2)x(SiO2)1−x (但し、n=1〜3、x≦1)によってあらわされる組成物を一種又は、二種以上含むことを特徴とする電子装置の製造方法。
- 基板と、該基板上に形成された透明樹脂膜と、該透明樹脂膜に選択的に埋設された金属膜とを備えた電子装置の製造方法において、
前記透明樹脂膜上に絶縁物塗布膜を形成する工程と、
前記塗布膜と前記透明樹脂膜とに選択的に溝を形成する工程と、
スパッタによって前記溝内及び前記塗布膜上を含む全面に金属膜を形成する工程と、
前記塗布膜をエッチング除去することで、前記塗布膜上の金属膜をリフトオフして、前記溝に前記金属膜が埋設された構成を得る工程と、
を含み、
前記透明樹脂膜上に前記絶縁物塗布膜を形成する工程は、多孔質塗布膜を形成する工程と該多孔質塗布膜上に無孔質塗布膜を形成する工程とを含むことを特徴とする電子装置の製造方法。 - 請求項1乃至3の内のいずれか一項に記載の電子装置の製造方法において、前記塗布膜と前記透明樹脂膜とに選択的に溝を形成する工程は、前記塗布膜上に感光性レジスト膜を設ける工程と、露光、現像によって前記感光性レジスト膜を選択的に除去して所定のパターンを形成する工程と、該所定パターンの感光性レジスト膜をマスクとして前記塗布膜を選択的にエッチング除去する工程とを含むことを特徴とする電子装置の製造方法。
- 請求項4に記載の電子装置の製造方法において、前記塗布膜と前記透明樹脂膜とに選択的に溝を形成する工程は、該所定パターンの感光性レジスト膜および選択的にエッチング除去された残余の塗布膜の少なくとも一方をマスクとして前記透明樹脂膜を選択的にエッチング除去する工程を更に含むことを特徴とする電子装置の製造方法。
- 請求項4に記載の電子装置の製造方法において、前記所定パターンの感光性レジスト膜をマスクとして前記塗布膜を選択的にエッチング除去する工程は、腐食性のガスを用いたドライエッチング工程を含むことを特徴とする電子装置の製造方法。
- 請求項6に記載の電子装置の製造方法において、前記塗布膜と前記透明樹脂膜とに選択的に溝を形成する工程は、前記所定パターンの感光性レジスト膜および選択的にエッチング除去された残余の塗布膜の少なくとも一方をマスクとし前記腐食性のガスを用いたドライエッチングで前記透明樹脂膜を選択的にエッチング除去する工程を更に含むことを特徴とする電子装置の製造方法。
- 請求項6又は7に記載の電子装置の製造方法において、前記腐食性のガスは、CxFyガスを含むことを特徴とする電子装置の製造方法。
- 請求項8に記載の電子装置の製造方法において、前記腐食性のガスは、CF4ガスを含むことを特徴とする電子装置の製造方法。
- 請求項8に記載の電子装置の製造方法において、前記腐食性のガスは、C5F8ガスおよびO2ガスを含むことを特徴とする電子装置の製造方法。
- 請求項1乃至10の内のいずれか一項に記載の電子装置の製造方法において、前記金属膜を形成する工程の後であって前記塗布膜をエッチング除去する前に、前記塗布膜の前記溝の側壁に付着した金属膜を除去する工程をさらに含むことを特徴とする電子装置の製造方法。
- 請求項1乃至11の内のいずれか一項に記載の電子装置の製造方法において、前記塗布膜をエッチング除去することで、前記塗布膜上の金属膜をリフトオフして、前記溝に前記金属膜が埋設された構成を得る工程は、フッ酸を含むエッチング液を用いて前記塗布膜をエッチング除去する工程を含むことを特徴とする電子装置の製造方法。
- 請求項1乃至12の内のいずれか一項に記載の電子装置の製造方法において、前記基板上に前記透明樹脂膜を1〜2μmの厚さに形成する工程を含むことを特徴とする電子装置の製造方法。
- 請求項1乃至13の内のいずれか一項に記載の電子装置の製造方法において、前記透明樹脂膜上に絶縁物塗布膜を形成する工程は、前記絶縁物塗布膜を300〜2,000nmの厚さに形成する工程を含むことを特徴とする電子装置の製造方法。
- 基板と、該基板上に形成された透明樹脂膜と、該透明樹脂膜に選択的に埋設された金属膜とを備えた電子装置の製造方法において、
前記透明樹脂膜上に絶縁物塗布膜を形成する工程と、
前記塗布膜と前記透明樹脂膜とに選択的に溝を形成する工程と、
スパッタによって前記溝内及び前記塗布膜上を含む全面に金属膜を形成する工程と、
前記塗布膜をエッチング除去することで、前記塗布膜上の金属膜をリフトオフして、前記溝に前記金属膜が埋設された構成を得る工程と、
を含み、
前記透明樹脂膜上に絶縁物塗布膜を形成する工程は、多孔質塗布膜を700〜1,600nmの厚さに形成する工程と該多孔質塗布膜上に無孔質塗布膜を100〜300nmの厚さに形成する工程とを含むことを特徴とする電子装置の製造方法。 - 請求項1乃至15の内のいずれか一項に記載の電子装置の製造方法において、前記選択的に埋設された金属膜上に絶縁層を介して半導体層を形成する工程を含むことを特徴とする電子装置の製造方法。
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TW201037436A (en) * | 2009-04-10 | 2010-10-16 | Au Optronics Corp | Pixel unit and fabricating method thereof |
US8669187B2 (en) * | 2009-05-08 | 2014-03-11 | 1366 Technologies, Inc. | Porous lift-off layer for selective removal of deposited films |
KR101241642B1 (ko) | 2010-07-27 | 2013-03-11 | 순천향대학교 산학협력단 | 멀티-패스 압출공정을 이용한 인공골의 제조방법 |
JP6278383B2 (ja) * | 2013-10-24 | 2018-02-14 | 国立研究開発法人産業技術総合研究所 | 高コントラスト位置合わせマークを備えたモールドの製造方法 |
JP2016072334A (ja) * | 2014-09-29 | 2016-05-09 | 日本ゼオン株式会社 | 積層体の製造方法 |
WO2019163786A1 (ja) * | 2018-02-23 | 2019-08-29 | 株式会社カネカ | 太陽電池の製造方法 |
WO2019163646A1 (ja) * | 2018-02-23 | 2019-08-29 | 株式会社カネカ | 太陽電池の製造方法 |
CN114843067B (zh) * | 2022-04-18 | 2023-06-23 | 电子科技大学 | 一种柔性电感及其制备方法 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51136538A (en) * | 1975-05-09 | 1976-11-26 | Ibm | Method of forming thin film having desired pattern on substrate |
JPS5272571A (en) * | 1975-12-15 | 1977-06-17 | Fujitsu Ltd | Production of semiconductor device |
JPH01297825A (ja) * | 1988-05-26 | 1989-11-30 | Casio Comput Co Ltd | 電極形成方法 |
JPH05183059A (ja) * | 1992-01-07 | 1993-07-23 | Oki Electric Ind Co Ltd | 電極と配線との組み合わせ構造およびその形成方法 |
JPH0621052A (ja) * | 1992-06-30 | 1994-01-28 | Sanyo Electric Co Ltd | 導電膜の製造方法 |
JPH0778820A (ja) * | 1993-09-08 | 1995-03-20 | Fujitsu Ltd | 薄膜パターンの形成方法 |
WO1997034447A1 (fr) * | 1996-03-12 | 1997-09-18 | Idemitsu Kosan Co., Ltd. | Element electroluminescent organique et affichage electroluminescent organique |
JP2001230382A (ja) * | 1999-12-22 | 2001-08-24 | Texas Instr Inc <Ti> | 強誘電性コンデンサを形成するための水素を含まない接触エッチング |
JP2002025979A (ja) * | 2000-07-03 | 2002-01-25 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
WO2004110117A1 (ja) * | 2003-06-04 | 2004-12-16 | Zeon Corporation | 基板及びその製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55163860A (en) * | 1979-06-06 | 1980-12-20 | Toshiba Corp | Manufacture of semiconductor device |
KR101124999B1 (ko) * | 2003-12-02 | 2012-03-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치와 그 제조 방법 |
-
2008
- 2008-09-05 US US12/733,595 patent/US20100203713A1/en not_active Abandoned
- 2008-09-05 KR KR1020107005795A patent/KR20100072191A/ko not_active Application Discontinuation
- 2008-09-05 CN CN200880106579.2A patent/CN101802987B/zh not_active Expired - Fee Related
- 2008-09-05 WO PCT/JP2008/066080 patent/WO2009034926A1/ja active Application Filing
- 2008-09-05 JP JP2009532165A patent/JP5354383B2/ja not_active Expired - Fee Related
- 2008-09-10 TW TW097134655A patent/TW200929377A/zh unknown
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51136538A (en) * | 1975-05-09 | 1976-11-26 | Ibm | Method of forming thin film having desired pattern on substrate |
JPS5272571A (en) * | 1975-12-15 | 1977-06-17 | Fujitsu Ltd | Production of semiconductor device |
JPH01297825A (ja) * | 1988-05-26 | 1989-11-30 | Casio Comput Co Ltd | 電極形成方法 |
JPH05183059A (ja) * | 1992-01-07 | 1993-07-23 | Oki Electric Ind Co Ltd | 電極と配線との組み合わせ構造およびその形成方法 |
JPH0621052A (ja) * | 1992-06-30 | 1994-01-28 | Sanyo Electric Co Ltd | 導電膜の製造方法 |
JPH0778820A (ja) * | 1993-09-08 | 1995-03-20 | Fujitsu Ltd | 薄膜パターンの形成方法 |
WO1997034447A1 (fr) * | 1996-03-12 | 1997-09-18 | Idemitsu Kosan Co., Ltd. | Element electroluminescent organique et affichage electroluminescent organique |
JP2001230382A (ja) * | 1999-12-22 | 2001-08-24 | Texas Instr Inc <Ti> | 強誘電性コンデンサを形成するための水素を含まない接触エッチング |
JP2002025979A (ja) * | 2000-07-03 | 2002-01-25 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
WO2004110117A1 (ja) * | 2003-06-04 | 2004-12-16 | Zeon Corporation | 基板及びその製造方法 |
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US20100203713A1 (en) | 2010-08-12 |
CN101802987A (zh) | 2010-08-11 |
CN101802987B (zh) | 2012-03-21 |
TW200929377A (en) | 2009-07-01 |
KR20100072191A (ko) | 2010-06-30 |
JPWO2009034926A1 (ja) | 2010-12-24 |
WO2009034926A1 (ja) | 2009-03-19 |
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