JP5349738B2 - 半導体デバイスの製造方法、およびそこで使用される導電性組成物 - Google Patents
半導体デバイスの製造方法、およびそこで使用される導電性組成物 Download PDFInfo
- Publication number
- JP5349738B2 JP5349738B2 JP2006112243A JP2006112243A JP5349738B2 JP 5349738 B2 JP5349738 B2 JP 5349738B2 JP 2006112243 A JP2006112243 A JP 2006112243A JP 2006112243 A JP2006112243 A JP 2006112243A JP 5349738 B2 JP5349738 B2 JP 5349738B2
- Authority
- JP
- Japan
- Prior art keywords
- composition
- weight
- film
- glass frit
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000203 mixture Substances 0.000 title claims description 82
- 239000004065 semiconductor Substances 0.000 title claims description 37
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 44
- 239000011521 glass Substances 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 33
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 28
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 28
- 239000000654 additive Substances 0.000 claims description 26
- 238000010304 firing Methods 0.000 claims description 22
- 229910044991 metal oxide Inorganic materials 0.000 claims description 20
- 150000004706 metal oxides Chemical class 0.000 claims description 20
- 230000000996 additive effect Effects 0.000 claims description 19
- 239000002245 particle Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 9
- 229910052742 iron Inorganic materials 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 7
- 229910052745 lead Inorganic materials 0.000 claims description 6
- 229910052748 manganese Inorganic materials 0.000 claims description 6
- 229910052707 ruthenium Inorganic materials 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 229910018068 Li 2 O Inorganic materials 0.000 claims description 4
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 229910004205 SiNX Inorganic materials 0.000 claims description 3
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims description 2
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 description 33
- 239000004332 silver Substances 0.000 description 33
- 229910052782 aluminium Inorganic materials 0.000 description 31
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 31
- 230000008569 process Effects 0.000 description 20
- 238000009792 diffusion process Methods 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 229910052710 silicon Inorganic materials 0.000 description 17
- 239000010703 silicon Substances 0.000 description 17
- 239000002609 medium Substances 0.000 description 16
- 239000011701 zinc Substances 0.000 description 15
- 229910000679 solder Inorganic materials 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 239000007789 gas Substances 0.000 description 10
- 239000000843 powder Substances 0.000 description 9
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000002612 dispersion medium Substances 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 239000004094 surface-active agent Substances 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 239000012071 phase Substances 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000001856 Ethyl cellulose Substances 0.000 description 3
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical group CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 150000001298 alcohols Chemical class 0.000 description 3
- 239000006117 anti-reflective coating Substances 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- -1 ester alcohols Chemical class 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229920001249 ethyl cellulose Polymers 0.000 description 3
- 235000019325 ethyl cellulose Nutrition 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 241000409201 Luina Species 0.000 description 2
- 235000021314 Palmitic acid Nutrition 0.000 description 2
- 235000021355 Stearic acid Nutrition 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- GHVNFZFCNZKVNT-UHFFFAOYSA-N decanoic acid Chemical compound CCCCCCCCCC(O)=O GHVNFZFCNZKVNT-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 2
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000011344 liquid material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 2
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000008117 stearic acid Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- DAFHKNAQFPVRKR-UHFFFAOYSA-N (3-hydroxy-2,2,4-trimethylpentyl) 2-methylpropanoate Chemical compound CC(C)C(O)C(C)(C)COC(=O)C(C)C DAFHKNAQFPVRKR-UHFFFAOYSA-N 0.000 description 1
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 1
- RUJPNZNXGCHGID-UHFFFAOYSA-N (Z)-beta-Terpineol Natural products CC(=C)C1CCC(C)(O)CC1 RUJPNZNXGCHGID-UHFFFAOYSA-N 0.000 description 1
- PZNPLUBHRSSFHT-RRHRGVEJSA-N 1-hexadecanoyl-2-octadecanoyl-sn-glycero-3-phosphocholine Chemical compound CCCCCCCCCCCCCCCCCC(=O)O[C@@H](COP([O-])(=O)OCC[N+](C)(C)C)COC(=O)CCCCCCCCCCCCCCC PZNPLUBHRSSFHT-RRHRGVEJSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000005632 Capric acid (CAS 334-48-5) Substances 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229920000896 Ethulose Polymers 0.000 description 1
- 239000001859 Ethyl hydroxyethyl cellulose Substances 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 239000005639 Lauric acid Substances 0.000 description 1
- OYHQOLUKZRVURQ-HZJYTTRNSA-N Linoleic acid Chemical compound CCCCC\C=C/C\C=C/CCCCCCCC(O)=O OYHQOLUKZRVURQ-HZJYTTRNSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 235000019326 ethyl hydroxyethyl cellulose Nutrition 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000005816 glass manufacturing process Methods 0.000 description 1
- 239000000156 glass melt Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- IPCSVZSSVZVIGE-UHFFFAOYSA-M hexadecanoate Chemical compound CCCCCCCCCCCCCCCC([O-])=O IPCSVZSSVZVIGE-UHFFFAOYSA-M 0.000 description 1
- 229940051250 hexylene glycol Drugs 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- 239000003350 kerosene Substances 0.000 description 1
- OYHQOLUKZRVURQ-IXWMQOLASA-N linoleic acid Natural products CCCCC\C=C/C\C=C\CCCCCCCC(O)=O OYHQOLUKZRVURQ-IXWMQOLASA-N 0.000 description 1
- 235000020778 linoleic acid Nutrition 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 235000021313 oleic acid Nutrition 0.000 description 1
- 239000012074 organic phase Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000008347 soybean phospholipid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- QJVXKWHHAMZTBY-GCPOEHJPSA-N syringin Chemical compound COC1=CC(\C=C\CO)=CC(OC)=C1O[C@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 QJVXKWHHAMZTBY-GCPOEHJPSA-N 0.000 description 1
- 150000003505 terpenes Chemical class 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- TUNFSRHWOTWDNC-HKGQFRNVSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCC[14C](O)=O TUNFSRHWOTWDNC-HKGQFRNVSA-N 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000011345 viscous material Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C14/00—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix
- C03C14/006—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix the non-glass component being in the form of microcrystallites, e.g. of optically or electrically active material
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/07—Glass compositions containing silica with less than 40% silica by weight containing lead
- C03C3/072—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/07—Glass compositions containing silica with less than 40% silica by weight containing lead
- C03C3/072—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron
- C03C3/074—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron containing zinc
- C03C3/0745—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron containing zinc containing more than 50% lead oxide, by weight
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/10—Frit compositions, i.e. in a powdered or comminuted form containing lead
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/10—Frit compositions, i.e. in a powdered or comminuted form containing lead
- C03C8/12—Frit compositions, i.e. in a powdered or comminuted form containing lead containing titanium or zirconium
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/16—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions with vehicle or suspending agents, e.g. slip
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/20—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing titanium compounds; containing zirconium compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2214/00—Nature of the non-vitreous component
- C03C2214/08—Metals
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2214/00—Nature of the non-vitreous component
- C03C2214/16—Microcrystallites, e.g. of optically or electrically active material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Geochemistry & Mineralogy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Dispersion Chemistry (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Conductive Materials (AREA)
Description
10:p−型シリコン基板
20:n−型拡散層
30:窒化シリコン膜、酸化チタン膜、または酸化シリコン膜
40:p+層(裏面電界、BSF)
60:裏面に形成されたアルミニウムペースト
61:アルミニウム裏面電極(裏面アルミニウムペーストを焼成することによって得られた)
70:裏面に形成された銀または銀/アルミニウムペースト
71:銀または銀/アルミニウム裏面電極(裏面銀ペーストを焼成することによって得られた)
500:正面に形成された銀ペースト
501:銀正面電極(正面銀ペーストを焼成することによって形成された)
本発明の無機成分は、(1)電気機能性銀粉末と、(2)Zn含有添加剤と、(3)ガラスフリットと、任意選択で(4)(a)Ti、Mn、Sn、Pb、Ru、Co、Fe、Cu、およびCrから選択された金属、(b)金属酸化物MOx(ただしMは、Ti、Mn、Sn、Pb、Ru、Co、Fe、Cu、およびCrから選択される)、(c)焼成によって(b)の金属酸化物を生成することのできる任意の化合物、および(d)これらの混合物から選択された追加の金属/金属酸化物添加剤とを含む。
一般に、厚膜組成物は、適切な電気機能性を組成物に与える機能相を含む。機能相は、組成物を形成する機能相に対して、担体として働く有機媒体中に分散された、電気機能性粉末を含む。この組成物を焼成して、有機相を燃焼し尽くし、無機結合剤相を活性化し、電気機能性を付与する。
本発明のZn含有添加剤は、(a)Zn、(b)Znの金属酸化物、(c)焼成によって、Znの金属酸化物を生成することができる任意の化合物、および(d)これらの混合物から選択することができる。さらに、Zn含有添加剤は、0.1μm未満の平均粒径を有する。特に、Zn含有添加剤は、7ナノメートルから100ナノメートル未満の範囲の平均粒径を有する。
本発明で使用することができる、ガラスフリット組成物の例には、非晶質であり部分的に結晶化可能なケイ酸鉛ガラス組成物、ならびにその他の適合性あるガラスフリット組成物が含まれる。他の実施形態では、これらのガラスフリットは、カドミウムを含まない。本発明で有用な、いくつかのガラスフリット組成物を、以下の表1に詳述する。
本発明の、追加の金属/金属酸化物添加剤は、(a)Ti、Mn、Sn、Pb、Ru、Co、Fe、Cu、およびCrから選択された金属、(b)金属酸化物MOx(ただしMは、Ti、Mn、Sn、Pb、Ru、Co、Fe、Cu、およびCrから選択される)、(c)焼成によって(b)の金属酸化物を生成することが可能な任意の化合物、および(d)これらの混合物から選択することができる。
無機成分は、典型的な場合、機械的混合によって有機媒体と混合し、それによって、印刷に適したコンシステンシーおよび流体力学的性質を有する「ペースト」と呼ばれる粘性組成物を形成する。広く様々な不活性の粘性材料を、有機媒体として使用することができる。有機媒体は、無機成分を、適度な安定度で分散させることができるものでなければならない。媒体の流体力学的性質は、固形分の安定な分散、スクリーン印刷に適切な粘度およびチキソトロピー、基板およびペースト固形分の適切な湿潤性、良好な乾燥速度、および良好な焼成特性も含めた良好な付着性を、組成物に与えるようなものでなければならない。本発明の厚膜組成物で使用される有機分散媒は、非水性の不活性な液体であることが好ましい。増粘剤、安定剤、および/またはその他の一般的な添加剤を含んでも含まなくてもよい様々な有機分散媒のいずれも利用することができる。有機媒体は、典型的な場合、ポリマーを溶媒に溶かした溶液である。さらに、界面活性剤などの少量の添加剤を、有機媒体の一部にすることができる。この目的で、最も頻繁に使用されるポリマーは、エチルセルロースである。エチルヒドロキシエチルセルロース、ウッドロジン、エチルセルロースとフェノール樹脂の混合物、低級アルコールのポリメタクリレート、およびエチレングリコールモノアセテートのモノブチルエーテルを含めたポリマーのその他の例も、使用することができる。厚膜組成物に見られる、最も広く使用される溶媒は、エステルアルコール、およびテルペンであって、例えばα−またはβ−テルピネオールなど、あるいはこれらとその他の溶媒、例えばケロシン、ジブチルフタレート、ブチルカルビトール、ブチルカルビトールアセテート、ヘキシレングリコール、ならびに高沸点アルコールおよびアルコールエステルなどとの混合物である。さらに、基板上に付着させた後、迅速な硬化を促進させるための揮発性液体も、分散媒に含めることができる。所望の粘度および揮発性要件が得られるように、これらおよびその他の溶媒の、様々な組合せを配合する。
したがって本発明は、半導体デバイスの製造に利用することができる新規な組成物を提供する。半導体デバイスは、接合部を持つ半導体基板と、その主要面上に形成された窒化シリコン絶縁膜とからなる構造要素から、以下の方法によって製造することができる。半導体デバイスを製造する方法は、絶縁膜に浸透する能力を有する本発明の導電性厚膜組成物を、所定の形状および所定の位置で絶縁膜上に付着させる(典型的な場合、被覆し、印刷する)ステップと、次いで導電性厚膜組成物が融解しかつ絶縁膜内を通過するように焼成し、シリコン基板との電気接触を実現するステップとを含む。導電性厚膜組成物は、本明細書で既に述べたように、銀粉末、Zn含有添加剤、軟化点が300から600℃であるガラスまたはガラス粉末混合物であって有機分散媒に分散させたもの、および任意選択で追加の金属/金属酸化物添加剤で作製された、厚膜ペースト組成物である。
実施例で利用されるガラス組成物を、以下の表2で詳述し、表3で特定する。
ペーストの調製は、一般に、以下の手順により実現した。適切な量の溶媒、媒体、および界面活性剤を計量し、次いで混合缶内で15分間混合し、次いでガラスフリットおよび金属添加剤を添加し、さらに15分間混合した。Agは、本発明の固形分の主要な部分であるので、より良好な濡れが確実になるように、少しずつ添加した。十分に混合したら、そのペーストを、0から400psiの圧力下で3本ロールミルに2〜3分間通した。ロール間の隙間は、1ミルに調節した。分散度を、磨砕度(FOG)によって測定した。典型的なFOG値は、一般に導体の場合、20/15に等しいかそれ未満である。
上述の方法により組み立てられた太陽電池を、効率を測定するために商用のIVテスタ内に配置した。IVテスタ内の電球で、既知の強度の日光を作り出し、電池の正面を照射し、電池の正面に印刷されたバスバーをIVテスタの複数のプローブに接続し、このプローブを通して電気信号をコンピュータに送信し、効率を計算した。
焼成後、はんだリボン(62Sn/36Pb/2Agで被覆された銅)を、電池の正面に印刷されたバスバーにはんだ付けした。はんだの条件は、典型的な場合、345℃で5秒間であった。使用したフラックスは、弱活性化alpha−611または非活性化multicore 100であった。はんだ付けした領域は、約2mm×2mmであった。接着強度は、電池の表面に対し90°の角度でリボンを引っ張ることにより、得られた。接着強度の評価では、以下の想定、すなわち400g未満の接着強度を良好ではないと見なし、400gから600g未満の範囲の値を適度な接着強度であると評価し、600g以上を良好、非常に良好、または優秀な接着強度であると見なす想定に基づいて、適度、良好、非常に良好、または優秀を用いた。
Claims (9)
- a)導電性銀粉末と、
b)粒径が7ナノメートルから100ナノメートル未満の範囲内にあるZn含有添加剤と、
c)軟化点が300から600℃の範囲内にあるガラスフリットとが、
d)有機媒体中に分散されていて、
前記ガラスフリットは、
e)全ガラスフリット組成物に対して、SiO 2 を21〜29重量パーセント、Al 2 O 3 を0.1〜8重量パーセント、PbOを50〜62重量パーセント、B 2 O 3 を7〜10重量パーセント、ZnOを0〜4重量パーセント、Li 2 Oを0〜0.1重量パーセント、およびTiO 2 を2〜7重量パーセント含むガラスフリット組成物、または、
f)全ガラスフリット組成物に対して、SiO 2 を0.1〜8重量パーセント、Al 2 O 3 を0〜4重量パーセント、B 2 O 3 を8〜25重量パーセント、CaOを0〜1重量パーセント、ZnOを0〜42重量パーセント、Na 2 Oを0〜4重量パーセント、Li 2 Oを0〜3.5重量パーセント、Bi 2 O 3 を28〜85重量パーセント、Ag 2 Oを0〜3重量パーセント、CeO 2 を0から4.5重量パーセント、SnO 2 を0〜3.5重量パーセント、およびBiF 3 を0〜15重量パーセント含む鉛フリーのガラスフリット組成物、
であることを特徴とする厚膜導電性組成物。 - (a)Ti、Mn、Sn、Pb、Ru、Co、Fe、Cu、およびCrから選択された金属と、
(b)金属酸化物MOxであって、MがTi、Mn、Sn、Pb、Ru、Co、Fe、Cu、およびCrから選択されたMOxと、
(c)焼成によって(b)の金属酸化物を生成することができる任意の化合物と、
(d)これらの混合物とから選択された、
追加の金属/金属酸化物添加剤をさらに含むことを特徴とする請求項1に記載の組成物。 - 前記Zn含有添加剤は、ZnOであることを特徴とする請求項1に記載の組成物。
- 請求項1に記載の組成物が堆積されており、前記組成物は、前記有機媒体が除去されるように、かつ前記ガラスフリットおよび銀粉末が焼結されるように、処理されていることを特徴とする基板。
- 請求項1に記載の組成物は、前記有機媒体が除去されるように、かつ前記ガラスフリットおよび銀粉末が焼結されるように処理されていることを特徴とする請求項1に記載の組成物から形成された電極。
- p−n接合を有する半導体と、半導体の主要面上に形成された絶縁膜とからなる構造要素から、半導体デバイスを製造する方法であって、(a)前記絶縁膜上に、請求項1に記載の厚膜組成物を付着させるステップと、(b)前記半導体、絶縁膜、および厚膜組成物を焼成して、電極を形成するステップとを含むことを特徴とする方法。
- 前記絶縁膜は、窒化シリコン膜、酸化チタン膜、SiNx:H膜、酸化シリコン膜、および酸化シリコン/酸化チタン膜を含む群から選択されることを特徴とする請求項6に記載の方法。
- 請求項6に記載の方法によって形成されたことを特徴とする半導体デバイス。
- 前記組成物は、前記有機媒体が除去され、かつ前記ガラスフリットおよび銀粉末が焼結されるように処理されていることを特徴とする請求項1に記載の組成物を含む半導体デバイス。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/106,329 US7556748B2 (en) | 2005-04-14 | 2005-04-14 | Method of manufacture of semiconductor device and conductive compositions used therein |
US11/106,329 | 2005-04-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006302890A JP2006302890A (ja) | 2006-11-02 |
JP5349738B2 true JP5349738B2 (ja) | 2013-11-20 |
Family
ID=36678352
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006112243A Expired - Fee Related JP5349738B2 (ja) | 2005-04-14 | 2006-04-14 | 半導体デバイスの製造方法、およびそこで使用される導電性組成物 |
Country Status (8)
Country | Link |
---|---|
US (3) | US7556748B2 (ja) |
EP (1) | EP1713091B1 (ja) |
JP (1) | JP5349738B2 (ja) |
KR (1) | KR100775733B1 (ja) |
CN (1) | CN1873836B (ja) |
AU (1) | AU2006201556A1 (ja) |
DE (1) | DE602006017138D1 (ja) |
TW (1) | TWI342568B (ja) |
Families Citing this family (109)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7435361B2 (en) * | 2005-04-14 | 2008-10-14 | E.I. Du Pont De Nemours And Company | Conductive compositions and processes for use in the manufacture of semiconductor devices |
US7462304B2 (en) * | 2005-04-14 | 2008-12-09 | E.I. Du Pont De Nemours And Company | Conductive compositions used in the manufacture of semiconductor device |
US7556748B2 (en) | 2005-04-14 | 2009-07-07 | E. I. Du Pont De Nemours And Company | Method of manufacture of semiconductor device and conductive compositions used therein |
US8093491B2 (en) * | 2005-06-03 | 2012-01-10 | Ferro Corporation | Lead free solar cell contacts |
NL1030200C2 (nl) * | 2005-10-14 | 2007-04-17 | Stichting Energie | Werkwijze voor het vervaardigen van n-type multikristallijn silicium zonnecellen. |
JP2007194580A (ja) * | 2005-12-21 | 2007-08-02 | E I Du Pont De Nemours & Co | 太陽電池電極用ペースト |
US20080003364A1 (en) | 2006-06-28 | 2008-01-03 | Ginley David S | Metal Inks |
NL2000248C2 (nl) * | 2006-09-25 | 2008-03-26 | Ecn Energieonderzoek Ct Nederl | Werkwijze voor het vervaardigen van kristallijn-silicium zonnecellen met een verbeterde oppervlaktepassivering. |
JP5127207B2 (ja) * | 2006-11-28 | 2013-01-23 | 京セラ株式会社 | 太陽電池素子、及びそれを用いた太陽電池モジュール |
WO2008134417A1 (en) * | 2007-04-25 | 2008-11-06 | Ferro Corporation | Thick film conductor formulations comprising silver and nickel or silver and nickel alloys and solar cells made therefrom |
US8304062B2 (en) * | 2007-07-20 | 2012-11-06 | Fry's Metals, Inc. | Electrical conductors and methods of making and using them |
TW200926210A (en) * | 2007-09-27 | 2009-06-16 | Murata Manufacturing Co | Ag electrode paste, solar battery cell, and process for producing the solar battery cell |
JP5272373B2 (ja) * | 2007-10-17 | 2013-08-28 | セントラル硝子株式会社 | 多結晶Si太陽電池 |
US7485245B1 (en) | 2007-10-18 | 2009-02-03 | E.I. Du Pont De Nemours And Company | Electrode paste for solar cell and solar cell electrode using the paste |
WO2009052343A1 (en) * | 2007-10-18 | 2009-04-23 | E. I. Du Pont De Nemours And Company | Conductive compositions and processes for use in the manufacture of semiconductor devices: flux materials |
WO2009052356A2 (en) * | 2007-10-18 | 2009-04-23 | E. I. Du Pont De Nemours And Company | Conductive compositions and processes for use in the manufacture of semiconductor devices |
CN101821816A (zh) | 2007-10-18 | 2010-09-01 | E.I.内穆尔杜邦公司 | 无铅导电组合物以及用于制造半导体装置的方法:焊剂材料 |
WO2009052141A1 (en) * | 2007-10-18 | 2009-04-23 | E. I. Du Pont De Nemours And Company | Conductive compositions and processes for use in the manufacture of semiconductor devices |
WO2009059302A1 (en) * | 2007-11-02 | 2009-05-07 | Alliance For Sustainable Energy, Llc | Fabrication of contacts for silicon solar cells including printing burn through layers |
US8101231B2 (en) * | 2007-12-07 | 2012-01-24 | Cabot Corporation | Processes for forming photovoltaic conductive features from multiple inks |
JP2009194141A (ja) * | 2008-02-14 | 2009-08-27 | Namics Corp | 太陽電池電極形成用導電性ペースト |
US7704866B2 (en) * | 2008-03-18 | 2010-04-27 | Innovalight, Inc. | Methods for forming composite nanoparticle-metal metallization contacts on a substrate |
US8361834B2 (en) | 2008-03-18 | 2013-01-29 | Innovalight, Inc. | Methods of forming a low resistance silicon-metal contact |
EP2260493A1 (en) * | 2008-04-09 | 2010-12-15 | E. I. du Pont de Nemours and Company | Conductive compositions and processes for use in the manufacture of semiconductor devices |
US20090266409A1 (en) * | 2008-04-28 | 2009-10-29 | E.I.Du Pont De Nemours And Company | Conductive compositions and processes for use in the manufacture of semiconductor devices |
KR20110014676A (ko) * | 2008-05-28 | 2011-02-11 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 광전지용 전도체: 서브미크론 입자를 함유하는 조성물 |
WO2009146348A1 (en) * | 2008-05-28 | 2009-12-03 | E. I. Du Pont De Nemours And Company | Compositions containing submicron particles used in conductors for photovoltaic cells |
US8008179B2 (en) * | 2008-05-28 | 2011-08-30 | E.I. Du Pont De Nemours And Company | Methods using silver compositions for micro-deposition direct writing silver conductor lines on photovoltaic wafers |
EP2294585A1 (en) * | 2008-05-28 | 2011-03-16 | E. I. du Pont de Nemours and Company | Methods using compositions containing submicron particles used in conductors for photovoltaic cells |
US8158504B2 (en) * | 2008-05-30 | 2012-04-17 | E. I. Du Pont De Nemours And Company | Conductive compositions and processes for use in the manufacture of semiconductor devices—organic medium components |
WO2009149438A1 (en) * | 2008-06-06 | 2009-12-10 | E. I. Du Pont De Nemours And Company | Glass compositions used in conductors for photovoltaic cells |
TW201008889A (en) * | 2008-06-06 | 2010-03-01 | Du Pont | Glass compositions used in conductors for photovoltaic cells |
US8076777B2 (en) * | 2008-06-26 | 2011-12-13 | E. I. Du Pont De Nemours And Company | Glass compositions used in conductors for photovoltaic cells |
DE102008032554A1 (de) * | 2008-07-10 | 2010-01-14 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Metallhaltige Zusammensetzung, Verfahren zur Herstellung von elektrischen Kontaktstrukturen auf elektronischen Bauteilen sowie elektronisches Bauteil |
KR101225909B1 (ko) * | 2008-08-07 | 2013-01-24 | 교토 에렉스 가부시키가이샤 | 태양전지소자의 전극형성용 도전성 페이스트, 태양전지소자 및 그 태양전지소자의 제조방법 |
KR101022415B1 (ko) * | 2008-08-29 | 2011-03-15 | 에스에스씨피 주식회사 | 도전성 페이스트 조성물 |
US7976734B2 (en) | 2008-09-10 | 2011-07-12 | E.I. Du Pont De Nemours And Company | Solar cell electrodes |
US8231934B2 (en) * | 2008-11-26 | 2012-07-31 | E. I. Du Pont De Nemours And Company | Conductive paste for solar cell electrode |
JP5059042B2 (ja) | 2009-02-25 | 2012-10-24 | 株式会社ノリタケカンパニーリミテド | 太陽電池電極用ペースト組成物 |
US8465794B2 (en) * | 2009-03-19 | 2013-06-18 | E I Du Pont De Nemours And Company | Glass compositions used in conductors for photovoltaic cells |
EP2417608A1 (en) * | 2009-03-30 | 2012-02-15 | E. I. du Pont de Nemours and Company | Metal pastes and use thereof in the production of silicon solar cells |
TW201044414A (en) * | 2009-03-30 | 2010-12-16 | Du Pont | Metal pastes and use thereof in the production of silicon solar cells |
WO2010118212A1 (en) * | 2009-04-09 | 2010-10-14 | E. I. Du Pont De Nemours And Company | Glass compositions used in conductors for photovoltaic cells |
WO2010118198A1 (en) * | 2009-04-09 | 2010-10-14 | E. I. Du Pont De Nemours And Company | Glass compositions used in conductors for photovoltaic cells |
CN102369168A (zh) * | 2009-04-09 | 2012-03-07 | E.I.内穆尔杜邦公司 | 用于光伏电池导体中的玻璃组合物 |
EP4350782A2 (en) * | 2009-04-21 | 2024-04-10 | Tetrasun, Inc. | High-efficiency solar cell structures and methods of manufacture |
US20100301479A1 (en) | 2009-05-28 | 2010-12-02 | E. I. Du Pont De Nemours And Company | Devices containing silver compositions deposited by micro-deposition direct writing silver conductor lines |
KR100984700B1 (ko) | 2009-06-04 | 2010-10-01 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
JP5426241B2 (ja) * | 2009-06-10 | 2014-02-26 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | チップ抵抗器の表電極および裏電極 |
TW201115592A (en) | 2009-06-19 | 2011-05-01 | Du Pont | Glass compositions used in conductors for photovoltaic cells |
JP5649290B2 (ja) * | 2009-07-30 | 2015-01-07 | 株式会社ノリタケカンパニーリミテド | 太陽電池電極用無鉛導電性組成物 |
KR20120051764A (ko) * | 2009-09-08 | 2012-05-22 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 광전지용 전도체 |
JP2013505540A (ja) | 2009-09-17 | 2013-02-14 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | ナノサイズの亜鉛添加剤を含む厚膜導電性組成物 |
JP5137923B2 (ja) | 2009-09-18 | 2013-02-06 | 株式会社ノリタケカンパニーリミテド | 太陽電池用電極ペースト組成物 |
DE102009044052A1 (de) * | 2009-09-18 | 2011-03-24 | Schott Solar Ag | Kristalline Solarzelle, Verfahren zur Herstellung einer solchen sowie Verfahren zur Herstellung eines Solarzellenmoduls |
JP5559509B2 (ja) * | 2009-10-28 | 2014-07-23 | 昭栄化学工業株式会社 | 太陽電池電極形成用導電性ペースト |
JP2013512571A (ja) * | 2009-11-25 | 2013-04-11 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 不動態化エミッタおよび背面接点シリコン太陽電池の銀裏面電極の形成方法 |
US20110143497A1 (en) * | 2009-12-16 | 2011-06-16 | E. I. Du Pont De Nemours And Company | Thick film conductive composition used in conductors for photovoltaic cells |
KR101332429B1 (ko) * | 2009-12-17 | 2013-11-22 | 제일모직주식회사 | 태양전지 전극용 페이스트 및 이를 이용한 태양전지 |
WO2011075703A2 (en) | 2009-12-18 | 2011-06-23 | E. I. Du Pont De Nemours And Company | Glass compositions used in conductors for photovoltaic cells |
US8252204B2 (en) | 2009-12-18 | 2012-08-28 | E I Du Pont De Nemours And Company | Glass compositions used in conductors for photovoltaic cells |
JP4970530B2 (ja) * | 2009-12-28 | 2012-07-11 | 株式会社ノリタケカンパニーリミテド | 太陽電池用ペースト組成物およびその製造方法ならびに太陽電池 |
US20110195540A1 (en) * | 2010-02-05 | 2011-08-11 | Hitachi Chemical Company, Ltd. | Composition for forming p-type diffusion layer, method for forming p-type diffusion layer, and method for producing photovoltaic cell |
JP5392138B2 (ja) * | 2010-02-17 | 2014-01-22 | 三菱マテリアル株式会社 | 導電性組成物及びそれを用いた太陽電池の製造方法 |
JP5445209B2 (ja) * | 2010-02-17 | 2014-03-19 | 三菱マテリアル株式会社 | 導電性組成物及びそれを用いた太陽電池の製造方法 |
JP5445208B2 (ja) * | 2010-02-17 | 2014-03-19 | 三菱マテリアル株式会社 | 導電性組成物及びそれを用いた太陽電池の製造方法 |
US20110214718A1 (en) * | 2010-03-02 | 2011-09-08 | E.I. Du Pont De Nemours And Company | Manufacturing of electrode |
KR101246686B1 (ko) * | 2010-03-19 | 2013-03-21 | 제일모직주식회사 | 태양전지 전극용 페이스트 및 이를 이용한 태양전지 |
US20110240124A1 (en) * | 2010-03-30 | 2011-10-06 | E.I. Du Pont De Nemours And Company | Metal pastes and use thereof in the production of silicon solar cells |
JP5608735B2 (ja) * | 2010-04-02 | 2014-10-15 | 株式会社ノリタケカンパニーリミテド | 太陽電池用ペースト組成物およびその製造方法ならびに太陽電池 |
US8497420B2 (en) * | 2010-05-04 | 2013-07-30 | E I Du Pont De Nemours And Company | Thick-film pastes containing lead- and tellurium-oxides, and their use in the manufacture of semiconductor devices |
CN101866991A (zh) * | 2010-05-26 | 2010-10-20 | 广东志成冠军集团有限公司 | 非晶硅/晶硅异质结太阳能电池制备方法 |
JP2012012231A (ja) * | 2010-06-29 | 2012-01-19 | Central Glass Co Ltd | 無鉛低融点ガラス組成物 |
CN102315309B (zh) * | 2010-06-30 | 2013-10-02 | 比亚迪股份有限公司 | 一种太阳能电池片的制备方法 |
JP5351100B2 (ja) | 2010-07-02 | 2013-11-27 | 株式会社ノリタケカンパニーリミテド | 太陽電池用導電性ペースト組成物 |
KR101374359B1 (ko) * | 2010-09-15 | 2014-03-18 | 제일모직주식회사 | 태양전지 전극용 페이스트 및 이를 이용하여 제조되는 태양전지 |
JP2012094859A (ja) * | 2010-10-14 | 2012-05-17 | Rohm & Haas Electronic Materials Llc | 金属コンタクトを形成する改良された方法 |
KR101199194B1 (ko) * | 2010-10-28 | 2012-11-07 | 엘지이노텍 주식회사 | 태양 전지의 전면 전극용 페이스트 조성물 및 태양 전지 |
WO2012064323A1 (en) * | 2010-11-09 | 2012-05-18 | E. I. Du Pont De Nemours And Company | Thick-film paste compositions with phosphonium surfactant |
US20120132272A1 (en) | 2010-11-19 | 2012-05-31 | Alliance For Sustainable Energy, Llc. | Solution processed metal oxide thin film hole transport layers for high performance organic solar cells |
US8858843B2 (en) * | 2010-12-14 | 2014-10-14 | Innovalight, Inc. | High fidelity doping paste and methods thereof |
WO2012111480A1 (ja) * | 2011-02-16 | 2012-08-23 | 株式会社 村田製作所 | 導電性ペースト及び太陽電池 |
US20130061918A1 (en) * | 2011-03-03 | 2013-03-14 | E. I. Dupont De Nemours And Company | Process for the formation of a silver back electrode of a passivated emitter and rear contact silicon solar cell |
US8900487B2 (en) * | 2011-03-24 | 2014-12-02 | E I Du Pont De Nemours And Company | Conductive paste composition and semiconductor devices made therefrom |
JP5891599B2 (ja) * | 2011-04-14 | 2016-03-23 | 日立化成株式会社 | シリコン系太陽電池の電極用ペースト組成物 |
US20130014816A1 (en) * | 2011-07-14 | 2013-01-17 | E. I. Du Pont De Nemours And Company | Conductive paste, method for manufacturing solar cell electrodes and solar cell electrodes |
KR20130045568A (ko) * | 2011-10-26 | 2013-05-06 | 삼성전자주식회사 | 도전성 페이스트, 상기 도전성 페이스트를 사용하여 형성된 전극을 포함하는 전자 소자 및 태양 전지 |
DE102012221334B4 (de) | 2011-12-22 | 2018-10-25 | Schott Ag | Lötpaste und deren Verwendung zur Front- oder Rückseitenkontaktierung von siliziumbasierten Solarzellen |
KR20130078667A (ko) * | 2011-12-30 | 2013-07-10 | 금오공과대학교 산학협력단 | 실리콘 태양전지의 전면전극 형성용 무기첨가제 및 이를 이용하여 제조된 실리콘 태양전지 |
KR101350960B1 (ko) * | 2012-01-13 | 2014-01-16 | 한화케미칼 주식회사 | 글래스 프릿, 이를 포함하는 도전성 페이스트 조성물 및 태양전지 |
JP6246135B2 (ja) * | 2012-01-18 | 2017-12-13 | ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー | 有機亜鉛化合物を含有する太陽電池の金属化 |
WO2013162024A1 (ja) * | 2012-04-26 | 2013-10-31 | 京セラ株式会社 | 太陽電池素子およびその製造方法 |
WO2013188485A1 (en) * | 2012-06-12 | 2013-12-19 | Heraeus Precious Metals North America Conshohocken Llc | Electroconductive paste with adhesion enhancer |
US8969709B2 (en) * | 2012-08-30 | 2015-03-03 | E I Du Pont De Nemours And Company | Use of a conductive composition containing lead—tellurium-based oxide in the manufacture of semiconductor devices with lightly doped emitters |
KR102025529B1 (ko) * | 2012-10-15 | 2019-09-27 | 다우 글로벌 테크놀로지스 엘엘씨 | 전도성 조성물 |
US20140191167A1 (en) * | 2013-01-04 | 2014-07-10 | Giga Solar Materials Corporation | Conductive Composition |
US9859515B2 (en) | 2013-03-07 | 2018-01-02 | Alliance For Sustainable Energy, Llc | Methods for producing thin film charge selective transport layers |
KR101396444B1 (ko) * | 2013-05-06 | 2014-05-22 | 한화케미칼 주식회사 | 태양전지의 전극의 제조방법 및 이를 이용한 태양전지 |
KR101600874B1 (ko) | 2014-05-16 | 2016-03-09 | 덕산하이메탈(주) | 은 페이스트 조성물 및 이를 이용하여 제조된 태양전지 |
CN104078100A (zh) * | 2014-06-30 | 2014-10-01 | 合肥中南光电有限公司 | 一种石墨粉/方解石复合的低卤素含量导电银浆及其制作方法 |
CN104078102A (zh) * | 2014-06-30 | 2014-10-01 | 合肥中南光电有限公司 | 一种改性纳米碳导电银浆及其制作方法 |
EP3076401A1 (en) | 2015-03-27 | 2016-10-05 | Heraeus Deutschland GmbH & Co. KG | Electro-conductive pastes comprising a metal compound |
US10636540B2 (en) | 2015-03-27 | 2020-04-28 | Heraeus Deutschland GmbH & Co. KG | Electro-conductive pastes comprising an oxide additive |
JP6624930B2 (ja) | 2015-12-26 | 2019-12-25 | 日亜化学工業株式会社 | 発光素子及びその製造方法 |
JP6683003B2 (ja) | 2016-05-11 | 2020-04-15 | 日亜化学工業株式会社 | 半導体素子、半導体装置及び半導体素子の製造方法 |
JP6720747B2 (ja) | 2016-07-19 | 2020-07-08 | 日亜化学工業株式会社 | 半導体装置、基台及びそれらの製造方法 |
TWI745562B (zh) | 2017-04-18 | 2021-11-11 | 美商太陽帕斯特有限責任公司 | 導電糊料組成物及用其製成的半導體裝置 |
KR102060425B1 (ko) * | 2017-10-31 | 2020-02-11 | 엘에스니꼬동제련 주식회사 | 태양전지 전극용 도전성 페이스트 및 이에 포함되는 유리 프릿, 그리고 태양 전지 |
US20210280725A1 (en) * | 2018-07-05 | 2021-09-09 | Unm Rainforest Innovations | Low-cost, crack-tolerant, screen-printable metallization for increased module reliability |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4051074A (en) * | 1975-10-29 | 1977-09-27 | Shoei Kagaku Kogyo Kabushiki Kaisha | Resistor composition and method for its manufacture |
US4256513A (en) * | 1978-10-19 | 1981-03-17 | Matsushita Electric Industrial Co., Ltd. | Photoelectric conversion device |
JPS6249676A (ja) * | 1985-08-29 | 1987-03-04 | Sharp Corp | 太陽電池 |
JPH0945130A (ja) * | 1995-07-28 | 1997-02-14 | Tanaka Kikinzoku Internatl Kk | 導体ペースト組成物 |
JP3209089B2 (ja) * | 1996-05-09 | 2001-09-17 | 昭栄化学工業株式会社 | 導電性ペースト |
JP2000277778A (ja) | 1999-03-25 | 2000-10-06 | Kyocera Corp | 太陽電池素子の製造方法 |
JP3430068B2 (ja) | 1999-04-16 | 2003-07-28 | シャープ株式会社 | 太陽電池の電極 |
JP4331827B2 (ja) | 1999-06-29 | 2009-09-16 | 京セラ株式会社 | 太陽電池素子の製造方法 |
JP2001127317A (ja) | 1999-10-28 | 2001-05-11 | Kyocera Corp | 太陽電池の製造方法 |
JP2001313400A (ja) | 2000-04-28 | 2001-11-09 | Kyocera Corp | 太陽電池素子の形成方法 |
DE10116653A1 (de) * | 2001-04-04 | 2002-10-10 | Dmc2 Degussa Metals Catalysts Cerdec Ag | Leitfähigkeitspaste, damit erzeugte Artikel mit einer leitfähigen Beschichtung auf Glas, Keramik und emailliertem Stahl und Verfahren zu deren Herstellung |
US20040104262A1 (en) * | 2001-04-09 | 2004-06-03 | Mears Sarah Jane | Use of conductor compositions in electronic circuits |
US20030108664A1 (en) * | 2001-10-05 | 2003-06-12 | Kodas Toivo T. | Methods and compositions for the formation of recessed electrical features on a substrate |
JP3910072B2 (ja) | 2002-01-30 | 2007-04-25 | 東洋アルミニウム株式会社 | ペースト組成物およびそれを用いた太陽電池 |
JP2004087951A (ja) | 2002-08-28 | 2004-03-18 | Sharp Corp | 太陽電池の製造方法 |
JP2004146521A (ja) | 2002-10-23 | 2004-05-20 | Sharp Corp | 銀電極用ペーストおよびそれを用いた太陽電池セル |
JP2004235273A (ja) | 2003-01-28 | 2004-08-19 | Kyocera Corp | 太陽電池素子の製造方法 |
GB0307547D0 (en) * | 2003-04-01 | 2003-05-07 | Du Pont | Conductor composition V |
JP3853793B2 (ja) * | 2004-02-27 | 2006-12-06 | 京セラケミカル株式会社 | 太陽電池用導電性ペースト、太陽電池及び太陽電池の製造方法 |
US20060001009A1 (en) * | 2004-06-30 | 2006-01-05 | Garreau-Iles Angelique Genevie | Thick-film conductive paste |
US7435361B2 (en) * | 2005-04-14 | 2008-10-14 | E.I. Du Pont De Nemours And Company | Conductive compositions and processes for use in the manufacture of semiconductor devices |
US7462304B2 (en) * | 2005-04-14 | 2008-12-09 | E.I. Du Pont De Nemours And Company | Conductive compositions used in the manufacture of semiconductor device |
US7556748B2 (en) * | 2005-04-14 | 2009-07-07 | E. I. Du Pont De Nemours And Company | Method of manufacture of semiconductor device and conductive compositions used therein |
-
2005
- 2005-04-14 US US11/106,329 patent/US7556748B2/en not_active Expired - Fee Related
-
2006
- 2006-04-12 AU AU2006201556A patent/AU2006201556A1/en not_active Abandoned
- 2006-04-13 EP EP06252073A patent/EP1713091B1/en not_active Expired - Fee Related
- 2006-04-13 DE DE602006017138T patent/DE602006017138D1/de active Active
- 2006-04-14 TW TW095113533A patent/TWI342568B/zh active
- 2006-04-14 JP JP2006112243A patent/JP5349738B2/ja not_active Expired - Fee Related
- 2006-04-14 CN CN2006100748075A patent/CN1873836B/zh not_active Expired - Fee Related
- 2006-04-14 KR KR1020060034001A patent/KR100775733B1/ko not_active IP Right Cessation
-
2008
- 2008-05-28 US US12/127,969 patent/US7906045B2/en not_active Expired - Fee Related
-
2011
- 2011-03-08 US US13/042,770 patent/US8394297B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20110155240A1 (en) | 2011-06-30 |
TW200735126A (en) | 2007-09-16 |
TWI342568B (en) | 2011-05-21 |
US7556748B2 (en) | 2009-07-07 |
US20080223446A1 (en) | 2008-09-18 |
KR20060108547A (ko) | 2006-10-18 |
EP1713091B1 (en) | 2010-09-29 |
CN1873836B (zh) | 2012-06-06 |
EP1713091A3 (en) | 2007-03-07 |
CN1873836A (zh) | 2006-12-06 |
KR100775733B1 (ko) | 2007-11-09 |
US20060231804A1 (en) | 2006-10-19 |
US7906045B2 (en) | 2011-03-15 |
AU2006201556A1 (en) | 2006-11-02 |
US8394297B2 (en) | 2013-03-12 |
EP1713091A2 (en) | 2006-10-18 |
DE602006017138D1 (de) | 2010-11-11 |
JP2006302890A (ja) | 2006-11-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5349738B2 (ja) | 半導体デバイスの製造方法、およびそこで使用される導電性組成物 | |
JP5362946B2 (ja) | 半導体デバイスの製造方法、およびそこで使用される導電性組成物 | |
JP5395995B2 (ja) | 半導体デバイスの製造に使用される導電性組成物および方法 | |
KR101086183B1 (ko) | 후막 전도성 조성물 및 반도체 소자의 제조에 사용하기 위한 공정 | |
WO2009052271A1 (en) | Lead-free conductive compositions and processes for use in the manufacture of semiconductor devices: mg-containing additive | |
EP2193526A1 (en) | Conductive compositions and processes for use in the manufacture of semiconductor devices: mg-containing additive | |
EP2191481A1 (en) | Conductive compositions and processes for use in the manufacture of semiconductor devices: multiple busbars | |
WO2009052356A2 (en) | Conductive compositions and processes for use in the manufacture of semiconductor devices |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090413 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120706 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121004 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121228 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130328 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130402 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130430 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130507 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130528 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130531 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130627 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130726 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130821 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |