JP5330464B2 - 供給及びバイアスの向上による電力増幅システム - Google Patents
供給及びバイアスの向上による電力増幅システム Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/004—Control by varying the supply voltage
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
- H03G3/3042—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/108—A coil being added in the drain circuit of a FET amplifier stage, e.g. for noise reducing purposes
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/181—A coil being added in the gate circuit of a FET amplifier stage, e.g. for noise reducing purposes
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/222—A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/318—A matching circuit being used as coupling element between two amplifying stages
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/372—Noise reduction and elimination in amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/411—Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising two power stages
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/504—Indexing scheme relating to amplifiers the supply voltage or current being continuously controlled by a controlling signal, e.g. the controlling signal of a transistor implemented as variable resistor in a supply path for, an IC-block showed amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/516—Some amplifier stages of an amplifier use supply voltages of different value
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/555—A voltage generating circuit being realised for biasing different circuit elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
- H03F2203/7227—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch in the supply circuit of the amplifier
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Description
Claims (16)
- バイアス回路に接続されたベース端子及び前記バイアス回路から切り離されたコレクタ端子を有する高周波(RF)トランジスタを備える電力増幅システムにおける、電力増幅器を作動するための方法であって、
前記バイアス回路を、電力コントローラによって提供される供給電圧に依存せず、かつ前記電力増幅器をイネーブルにする参照電圧源に結合し、さらに前記バイアス回路及び前記コレクタ端子を前記供給電圧に結合するステップと、
前記電力増幅器の出力電力に基づいて前記供給電圧を変化するステップと、
前記供給電圧が変動したときに前記RFトランジスタのバイアスポイントが自動的に調整されるように、前記バイアス回路から前記RFトランジスタの前記ベースへのバイアス電流を前記供給電圧の変化に基づいて自動的に変化するステップと、
を備える前記電力増幅器を作動するための方法。 - 前記供給電圧は、前記電力増幅器の前記出力電力に比例する請求項1記載の方法。
- ベース端子及びコレクタ端子を有する少なくとも一つの高周波(RF)トランジスタを備える電力増幅器と、
バイアス電流を前記RFトランジスタの前記ベース端子に供給するバイアス回路であり、前記RFトランジスタの前記コレクタ端子から切り離されているバイアス回路と、
供給電圧を前記バイアス回路及び前記RFトランジスタのコレクタ端子に供給する電力コントローラであり、前記供給電圧が変動したときに前記RFトランジスタのバイアスポイントが自動的に調整されるように、前記バイアス回路から前記RFトランジスタの前記ベースへのバイアス電流を前記供給電圧の変化に基づいて自動的に変化する、前記電力コントローラと、
を備え、
前記バイアス回路は、前記電力コントローラからの入力、及び前記供給電圧に依存しない参照電圧源からの入力を受け取る電力増幅システム。 - 前記バイアス回路は、カレントミラーとして構成される複数トランジスタを備える請求項3記載の電力増幅システム。
- 前記供給電圧は、前記電力増幅器の前記出力電力に比例する請求項3記載の電力増幅システム。
- 前記電力コントローラは、バッテリーによって電力が供給される請求項3記載の電力増幅システム。
- 前記バイアス回路は、前記バッテリーによって電力が供給される請求項6記載の電力増幅システム。
- 制御端子及び出力端子を有する高周波(RF)トランジスタと、
前記RFトランジスタの前記制御端子にバイアス信号を供給するバイアス回路であって、前記RFトランジスタの前記出力端子から切り離されている前記バイアス回路と、
前記RFトランジスタの前記バイアス回路へ、さらには前記出力端子へ供給電圧を提供する電力コントローラであって、前記供給電圧が変化するときに前記RFトランジスタのバイアスポイントが自動的に調整されるように、前記RFトランジスタの前記制御端子への前記バイアス信号が前記供給電圧の変化に基づいて自動的に変化される、前記電力コントローラと、
を備え、
前記バイアス回路は、前記供給電圧に依存しない参照電圧源に接続する増幅システム。 - 前記RFトランジスタはバイポーラトランジスタであり、前記バイアス信号はバイアス電流である請求項8記載の増幅システム。
- 前記供給電圧は、前記増幅システムの出力電力に比例する請求項8記載の増幅システム。
- 前記電力コントローラはバッテリーにより電力が供給される請求項8記載の増幅システム。
- 前記バイアス回路は、前記バッテリーにより電力が供給される請求項11記載の増幅システム。
- 前記バイアス回路は、カレントミラーとして構成される複数トランジスタを備える請求項8記載の増幅システム。
- 制御端子及び出力端子を有する第1の高周波(RF)トランジスタと、
前記第1のRFトランジスタの前記出力端子に結合される制御端子を有し、さらに出力端子を有する第2の高周波(RF)トランジスタと、
前記第1のRFトランジスタの前記制御端子にバイアス信号を供給するための第1のバイアス回路であって、前記RFトランジスタの前記出力端子から切り離される前記第1のバイアス回路と、
前記RFトランジスタの前記制御端子にバイアス信号を供給するための第2のバイアス回路であって、前記RFトランジスタの前記出力端子から切り離される前記第2のバイアス回路と、
前記第1及び第2のバイアス回路及び前記RFトランジスタの前記出力端子に供給電圧を提供するための電力コントローラであって、前記供給電圧が変化されるときに前記RFトランジスタのバイアスポイントが自動的に調整されるように、前記RFトランジスタの前記制御端子への前記バイアス信号を前記供給電圧の変化に基づいて自動的に変化する、前記電力コントローラと、
を備え、
前記第1のバイアス回路及び第2のバイアス回路は、前記供給電圧に依存しない参照電圧源に接続する増幅システム。 - 前記第1のRFトランジスタの前記出力端子を前記第2のRFトランジスタの前記制御端子に結合する段間結合ユニットをさらに備える請求項14記載の増幅システム。
- 前記供給電圧は、前記増幅システムの出力に比例する請求項14記載の増幅システム。
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US10/167,530 | 2002-06-11 | ||
US10/167,530 US6784748B1 (en) | 2000-02-24 | 2002-06-11 | Power amplifying system with supply and bias enhancements |
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JP2011239457A JP2011239457A (ja) | 2011-11-24 |
JP5330464B2 true JP5330464B2 (ja) | 2013-10-30 |
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JP2011156505A Expired - Lifetime JP5330464B2 (ja) | 2002-06-11 | 2011-07-15 | 供給及びバイアスの向上による電力増幅システム |
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EP (1) | EP1512221B1 (ja) |
JP (2) | JP4810094B2 (ja) |
AU (1) | AU2003274387A1 (ja) |
WO (1) | WO2003105338A1 (ja) |
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-
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- 2003-06-06 EP EP03741882.9A patent/EP1512221B1/en not_active Expired - Lifetime
- 2003-06-06 JP JP2004512285A patent/JP4810094B2/ja not_active Expired - Lifetime
- 2003-06-06 AU AU2003274387A patent/AU2003274387A1/en not_active Abandoned
- 2003-06-06 WO PCT/US2003/017747 patent/WO2003105338A1/en active Application Filing
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2011
- 2011-07-15 JP JP2011156505A patent/JP5330464B2/ja not_active Expired - Lifetime
Cited By (2)
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KR20170019800A (ko) * | 2015-08-12 | 2017-02-22 | 삼성전자주식회사 | Rf 신호 송신을 위한 전자 장치의 동작 방법 및 그 전자 장치 |
KR20170019710A (ko) * | 2015-08-12 | 2017-02-22 | 삼성전자주식회사 | Rf 신호 송신을 위한 전자 장치의 동작 방법 및 그 전자 장치 |
Also Published As
Publication number | Publication date |
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EP1512221A1 (en) | 2005-03-09 |
JP2005530387A (ja) | 2005-10-06 |
WO2003105338A1 (en) | 2003-12-18 |
JP2011239457A (ja) | 2011-11-24 |
JP4810094B2 (ja) | 2011-11-09 |
US20040164803A1 (en) | 2004-08-26 |
US6784748B1 (en) | 2004-08-31 |
AU2003274387A1 (en) | 2003-12-22 |
EP1512221B1 (en) | 2013-08-28 |
EP1512221A4 (en) | 2007-08-08 |
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