JP5313680B2 - 増感超薄層を用いた有機光電池 - Google Patents
増感超薄層を用いた有機光電池 Download PDFInfo
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- 238000013086 organic photovoltaic Methods 0.000 title description 8
- 239000000463 material Substances 0.000 claims abstract description 186
- 238000010521 absorption reaction Methods 0.000 claims description 48
- 238000004770 highest occupied molecular orbital Methods 0.000 claims description 24
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 claims description 24
- 150000003384 small molecules Chemical class 0.000 claims description 16
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- 238000000862 absorption spectrum Methods 0.000 claims description 9
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- LLVONELOQJAYBZ-UHFFFAOYSA-N tin(ii) phthalocyanine Chemical compound N1=C(C2=CC=CC=C2C2=NC=3C4=CC=CC=C4C(=N4)N=3)N2[Sn]N2C4=C(C=CC=C3)C3=C2N=C2C3=CC=CC=C3C1=N2 LLVONELOQJAYBZ-UHFFFAOYSA-N 0.000 claims description 5
- 230000001788 irregular Effects 0.000 claims description 2
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 250
- 239000000370 acceptor Substances 0.000 description 92
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- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 9
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
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- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 4
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 238000005191 phase separation Methods 0.000 description 3
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- 239000012044 organic layer Substances 0.000 description 2
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- 239000003504 photosensitizing agent Substances 0.000 description 2
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- 238000010129 solution processing Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
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- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
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- 238000010893 electron trap Methods 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
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- 229910052749 magnesium Inorganic materials 0.000 description 1
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- 239000002073 nanorod Substances 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005325 percolation Methods 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- 238000001894 space-charge-limited current method Methods 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
- H10K30/211—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions comprising multiple junctions, e.g. double heterojunctions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
- H10K30/353—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising blocking layers, e.g. exciton blocking layers
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
- H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/311—Phthalocyanine
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Description
実験はλ>900nmの波長に感度を有するスズ(II)フタロシアニン(SnPc)/C60ドナー・アクセプターへテロ接合に基づく有機光電池で実施された。SnPcの多結晶薄膜内の正孔移動度の低さ、μh=(2±1)×10−10cm2/Vs、は、薄層の使用を妨げ、低い曲線因子及び低い電力変換効率に繋がる。しかしながら、その大きな吸収係数によって、SnPcの厚み50Åの層はλ=750nmにおいて最高21%の外部太陽電池外部量子効率をもたらす。酸化インジウムスズ/100Å銅フタロシアニン/50ÅSnPc/540ÅC60/75Åバトクプロイン/Agの二重ヘテロ構造で、1sun標準AM1.5G太陽照度の下で(1.0±0.1)%の電力変換効率、及び強い(10suns)標準AM1.5G太陽照度の下で(1.3±0.1)%の効率を得る。SnPc増感層を持たない装置(酸化インジウムスズ/銅フタロシアニン/C60/Ag装置)の例に関しては、「4.2% efficient organic photovoltaic cells with low series resistances」、J.Xueら、Applied Physics Letters 84,3013−3015(2004)を参照されたい。
8 励起子
100 装置
120 アノード
122 アノード平滑層
150 光活性領域
152 ドナー
153 混合ヘテロ接合
154 アクセプター
156 励起子阻止層
170 カソード
252 ドナー材料
254 アクセプター材料
300 装置
320 透明コンタクト
350 光活性領域
358 有機光導電材料
400 装置
500 装置
1001 経路
Claims (23)
- 第1電極及び第2電極と、
配列中の各層が配列中の隣の層と直接接触し、有機光活性層の配列が少なくとも一つのドナー・アクセプターへテロ接合を形成するよう配置され、前記第1電極と前記第2電極との間に配置された有機光活性層の配列と、を含み、
前記配列が、
ドナーとして働く第1ホスト材料を含む第1有機光活性層と、
前記第1有機光活性層と第3有機光活性層との間に配置され、第2ホスト材料を含む第2有機光活性層と、
アクセプターとして働く第3ホスト材料を含む前記第3有機光活性層と、を含み、
前記第2有機光活性層は、前記第2ホスト材料の複数の不連続な島を含み、前記第1有機光活性層が前記島の間で前記第3有機光活性層と直接接触し、その結果第1ドナー・アクセプターへテロ接合を形成し、
前記第1ホスト材料、第2ホスト材料、及び第3ホスト材料は異なり、
前記第2有機光活性層は前記第1有機光活性層に関してアクセプターとして働き、その結果前記第1有機光活性層と第2ドナー・アクセプターへテロ接合を形成し、又は前記第3光活性層に関してドナーとして働き、その結果前記第3有機光活性層と第3ドナー・アクセプターへテロ接合を形成し、前記第2有機光活性層の第2ホスト材料内部の任意の点からその層の境界までの距離は、前記第2有機光活性層の半分を超える領域にわたって1励起子拡散長以下である、感光性装置。 - 前記第2ホスト材料が低分子である、請求項1に記載の感光性装置。
- 前記第1ホスト材料及び前記第3ホスト材料が低分子である、請求項2に記載の感光性装置。
- 前記第2ホスト材料が600nmから900nmの波長帯にわたって少なくとも5×104cm−1の吸収係数を有する、請求項2に記載の感光性装置。
- 前記第1有機光活性層、前記第2有機光活性層、及び前記第3有機光活性層の各々が異なる吸収スペクトルを有する、請求項1に記載の感光性装置。
- 前記第2有機光活性層がドナーとして働き、前記第1ホスト材料と第2ホスト材料とが異なる吸収スペクトルを有する、請求項1に記載の感光性装置。
- 前記第2ホスト材料のHOMOが前記第1ホスト材料のHOMOと比べて0.16eVを超えずに高い、請求項6に記載の感光性装置。
- 前記第2ホスト材料のバンドギャップが前記第1のホスト材料のバンドギャップ未満である、請求項6に記載の感光性装置。
- 前記第2ホスト材料は1×10−9cm2/Vs未満の正孔移動度を有して、及び600nmから900nmまでの波長帯にわたって吸収係数が少なくとも5×104cm−1である、請求項6に記載の感光性装置。
- 前記第2ホスト材料がスズ(II)フタロシアニン(SnPc)及び鉛フタロシアニン(PbPc)から選択される、請求項6に記載の感光性装置。
- 前記第3ホスト材料がC60である、請求項10に記載の感光性装置。
- 前記第2有機光活性層がアクセプターとして働き、前記第2ホスト材料及び前記第3ホスト材料が異なる吸収スペクトルを有する、請求項1に記載の感光性装置。
- 前記第2ホスト材料のLUMOが前記第3ホスト材料のLUMOよりも0.16eVを超えず低い、請求項12に記載の感光性装置。
- 前記第2ホスト材料のバンドギャップが前記第3ホスト材料のバンドギャップ未満である、請求項12に記載の感光性装置。
- 前記第2有機光伝導層の厚みが200Å以下である、請求項1に記載の感光性装置。
- 前記第2有機光伝導層の厚みが100Å以下である、請求項15に記載の感光性装置。
- 前記第2ホスト材料は600nmから900nmまでの波長帯にわたって吸収係数が少なくとも5×104cm−1であり、前記第2有機光活性層の少なくとも一部は装置の反射表面からλ1・d+λ1/4の光学的経路長で配置され、
λ1は600nmから900nmまでの波長帯内の波長であり、
dは0以上の整数であり、
反射表面はλ1における入射光の少なくとも50%を反射する、請求項1に記載の感光性装置。 - 前記反射表面が前記第1電極、前記第2電極、及び反射面の一つによって提供される、請求項17に記載の感光性装置。
- 前記有機光活性層の配列が第1電極と第2電極との間に配置された光活性電池積層体の中の第1の電池の一部であり、装置が光活性電池の積層体の第2の電池をさらに含み、前記第2の電池が他のドナー・アクセプターへテロ接合を含み、
前記第1の電池と前記第2の電池とが異なる吸収特性を有し、
λ1±5%の波長範囲にわたって前記第1の電池の平均吸収は前記第2の電池の平均吸収よりも大きく、
前記第2の電池の平均吸収はλ2±5%の波長範囲にわたって第1の電池の平均吸収よりも大きく、
λ1≧λ2+10%である、請求項17に記載の感光性装置。 - 前記有機光活性層の配列が、第1の有機光活性層と第3の有機光活性層との間に配置されたバルク又は混合ドナー・アクセプター層をさらに含み、前記バルク又は混合ドナー・アクセプター層が第1有機光活性層の第1ホスト材料と第3有機光活性層の第3ホスト材料との両方を含む、請求項1に記載の感光性装置。
- 前記有機光活性層の配列は、前記第1有機光活性層と前記第3有機光活性層との間に配置された第4ホスト材料を含む第4の有機光活性層をさらに含み、
前記第4ホスト材料は、第1ホスト材料、第2ホスト材料、及び第3ホスト材料とは異なり、
前記第4有機光活性層は前記第1有機光活性層に関するアクセプターとして働き、又は前記第3光活性層に関するドナーとして働き、前記第4有機光活性層内部の任意の点から層の境界までの距離は、1励起子拡散長以下である、請求項1に記載の感光性装置。 - 前記第2有機光活性層の第2ホスト材料内部の任意の点からその層の境界までの距離は、前記第2有機光活性層の全領域にわたって1励起子拡散長以下である、請求項1に記載の感光性装置。
- 前記第1有機光活性層が表面不規則性を有し、前記第1及び第3有機光活性層が前記表面不規則性によって生じる前記第2有機光活性層の不規則な被覆性の結果として直接接触し、第1ドナー・アクセプターヘテロ接合を形成する、請求項1に記載の感光性装置。
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