JP5312837B2 - 極端紫外光源装置 - Google Patents
極端紫外光源装置 Download PDFInfo
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- JP5312837B2 JP5312837B2 JP2008104280A JP2008104280A JP5312837B2 JP 5312837 B2 JP5312837 B2 JP 5312837B2 JP 2008104280 A JP2008104280 A JP 2008104280A JP 2008104280 A JP2008104280 A JP 2008104280A JP 5312837 B2 JP5312837 B2 JP 5312837B2
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- 239000002245 particle Substances 0.000 claims description 35
- 239000013077 target material Substances 0.000 claims description 31
- 238000011084 recovery Methods 0.000 claims description 21
- 230000003287 optical effect Effects 0.000 claims description 19
- 230000001678 irradiating effect Effects 0.000 claims description 12
- 150000002500 ions Chemical class 0.000 description 36
- 230000007246 mechanism Effects 0.000 description 11
- 239000007789 gas Substances 0.000 description 10
- 230000004907 flux Effects 0.000 description 7
- 239000007788 liquid Substances 0.000 description 6
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- 229910052724 xenon Inorganic materials 0.000 description 4
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 230000005469 synchrotron radiation Effects 0.000 description 2
- 239000013076 target substance Substances 0.000 description 2
- 230000005457 Black-body radiation Effects 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000003542 behavioural effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
- H05G2/005—X-ray radiation generated from plasma being produced from a liquid or gas containing a metal as principal radiation generating component
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/008—X-ray radiation generated from plasma involving a beam of energy, e.g. laser or electron beam in the process of exciting the plasma
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Atmospheric Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Environmental & Geological Engineering (AREA)
- Toxicology (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- X-Ray Techniques (AREA)
Description
図1は、本発明の第1の実施形態に係る極端紫外(EUV)光源装置の構成を示す側面図であり、図2は、本発明の第1の実施形態に係るEUV光源装置の構成を示す背面図である。本実施形態に係るEUV光源装置は、レーザビームをターゲット物質に照射して励起させることによりEUV光を生成するレーザ励起プラズマ(LPP)方式を採用している。
図8は、本発明の第2の実施形態に係るEUV光源装置の構成を示す側面図である。本実施形態においては、電磁石(コイル)18を横置きとして、真空チャンバ13を電磁石18から分離して移動させることができるように、真空チャンバ13にチャンバ移動用キャスタ33が設けられており、チャンバ移動用キャスタ33と対向する床面にチャンバ移動用レール34が敷かれている。
Claims (4)
- ターゲット物質にレーザビームを照射することにより極端紫外光を発生するレーザ励起プラズマ方式の極端紫外光源装置であって、
極端紫外光の生成が行われるチャンバと、
前記チャンバ内の所定のプラズマ発生位置にターゲット物質のドロップレットを供給するターゲット供給手段と、
前記ターゲット供給手段によって前記プラズマ発生位置に供給されるターゲット物質のドロップレットに対してレーザビームを照射することにより発生するプラズマから放射される極端紫外光を集光して出射する集光ミラーと、
唯1つのコイルを用いて前記プラズマ発生位置に磁場を形成する磁場形成手段と、
前記チャンバの1つの面に配置され、荷電粒子を回収するための回収配管と、
前記チャンバ内に滞留している荷電粒子を前記回収配管に導く排気ポンプと、
を具備し、前記コイルと前記回収配管との間に前記プラズマ発生位置が配置されている、極端紫外線光源装置。 - 光軸に直交する面が、前記コイルによって発生される磁力線に対して略平行となるように、前記集光ミラーが配置されている、請求項1記載の極端紫外光源装置。
- 前記チャンバと前記コイルとが、互いに分離可能とされている、請求項1又は2記載の極端紫外光源装置。
- 前記チャンバを前記コイルから分離して移動させる際に用いられるキャスタが、前記チャンバに設けられている、請求項3記載の極端紫外光源装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008104280A JP5312837B2 (ja) | 2008-04-14 | 2008-04-14 | 極端紫外光源装置 |
US12/385,569 US7928418B2 (en) | 2008-04-14 | 2009-04-13 | Extreme ultra violet light source apparatus |
US13/047,131 US8354657B2 (en) | 2008-04-14 | 2011-03-14 | Extreme ultra violet light source apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008104280A JP5312837B2 (ja) | 2008-04-14 | 2008-04-14 | 極端紫外光源装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009259447A JP2009259447A (ja) | 2009-11-05 |
JP5312837B2 true JP5312837B2 (ja) | 2013-10-09 |
Family
ID=41200337
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008104280A Expired - Fee Related JP5312837B2 (ja) | 2008-04-14 | 2008-04-14 | 極端紫外光源装置 |
Country Status (2)
Country | Link |
---|---|
US (2) | US7928418B2 (ja) |
JP (1) | JP5312837B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9872372B2 (en) | 2014-07-11 | 2018-01-16 | Gigaphoton Inc. | Extreme ultraviolet light generation device |
US10136510B2 (en) | 2014-12-17 | 2018-11-20 | Gigaphoton Inc. | Extreme ultraviolet light generation device |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5312837B2 (ja) * | 2008-04-14 | 2013-10-09 | ギガフォトン株式会社 | 極端紫外光源装置 |
US9052615B2 (en) * | 2008-08-29 | 2015-06-09 | Gigaphoton Inc. | Extreme ultraviolet light source apparatus |
JP5426317B2 (ja) | 2008-10-23 | 2014-02-26 | ギガフォトン株式会社 | 極端紫外光光源装置 |
US8283643B2 (en) * | 2008-11-24 | 2012-10-09 | Cymer, Inc. | Systems and methods for drive laser beam delivery in an EUV light source |
JP5670174B2 (ja) * | 2010-03-18 | 2015-02-18 | ギガフォトン株式会社 | チャンバ装置および極端紫外光生成装置 |
JP6080481B2 (ja) * | 2012-01-26 | 2017-02-15 | ギガフォトン株式会社 | 極端紫外光生成装置 |
FR3002720B1 (fr) * | 2013-02-27 | 2015-04-10 | Ecole Polytech | Dispositif de magnetisation de plasma laser par champ magnetique pulse |
CN105867076A (zh) * | 2016-06-21 | 2016-08-17 | 哈尔滨工业大学 | 采用磁拖动结构实现的LDP Sn介质EUV光源*** |
KR102536355B1 (ko) * | 2017-01-06 | 2023-05-25 | 에이에스엠엘 네델란즈 비.브이. | 안내 장치 및 관련 시스템 |
US10955749B2 (en) * | 2017-01-06 | 2021-03-23 | Asml Netherlands B.V. | Guiding device and associated system |
US10880981B2 (en) * | 2017-09-29 | 2020-12-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Collector pellicle |
US11239001B2 (en) * | 2018-09-27 | 2022-02-01 | Taiwan Semiconductor Manufacturing Company Ltd | Method for generating extreme ultraviolet radiation and an extreme ultraviolet (EUV) radiation source |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62145633A (ja) * | 1985-12-20 | 1987-06-29 | Hitachi Ltd | プラズマx線源装置 |
JP2000223757A (ja) * | 1999-02-04 | 2000-08-11 | Komatsu Ltd | ガスレーザ |
US6972421B2 (en) | 2000-06-09 | 2005-12-06 | Cymer, Inc. | Extreme ultraviolet light source |
US7251012B2 (en) * | 2003-12-31 | 2007-07-31 | Asml Netherlands B.V. | Lithographic apparatus having a debris-mitigation system, a source for producing EUV radiation having a debris mitigation system and a method for mitigating debris |
JP4535732B2 (ja) * | 2004-01-07 | 2010-09-01 | 株式会社小松製作所 | 光源装置及びそれを用いた露光装置 |
JP4696478B2 (ja) * | 2004-06-09 | 2011-06-08 | 株式会社Ihi | プラズマx線発生装置 |
JP4954584B2 (ja) * | 2006-03-31 | 2012-06-20 | 株式会社小松製作所 | 極端紫外光源装置 |
JP2008053696A (ja) * | 2006-07-28 | 2008-03-06 | Ushio Inc | 極端紫外光光源装置および極端紫外光発生方法 |
JP5312837B2 (ja) * | 2008-04-14 | 2013-10-09 | ギガフォトン株式会社 | 極端紫外光源装置 |
JP5246916B2 (ja) * | 2008-04-16 | 2013-07-24 | ギガフォトン株式会社 | Euv光発生装置におけるイオン回収装置および方法 |
CN101561604B (zh) * | 2008-04-17 | 2011-07-06 | 北京京东方光电科技有限公司 | 薄膜晶体管液晶显示器阵列基板结构及制造方法 |
JP5559562B2 (ja) * | 2009-02-12 | 2014-07-23 | ギガフォトン株式会社 | 極端紫外光光源装置 |
-
2008
- 2008-04-14 JP JP2008104280A patent/JP5312837B2/ja not_active Expired - Fee Related
-
2009
- 2009-04-13 US US12/385,569 patent/US7928418B2/en active Active
-
2011
- 2011-03-14 US US13/047,131 patent/US8354657B2/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9872372B2 (en) | 2014-07-11 | 2018-01-16 | Gigaphoton Inc. | Extreme ultraviolet light generation device |
US10136510B2 (en) | 2014-12-17 | 2018-11-20 | Gigaphoton Inc. | Extreme ultraviolet light generation device |
Also Published As
Publication number | Publication date |
---|---|
US20090261277A1 (en) | 2009-10-22 |
US7928418B2 (en) | 2011-04-19 |
JP2009259447A (ja) | 2009-11-05 |
US20110163247A1 (en) | 2011-07-07 |
US8354657B2 (en) | 2013-01-15 |
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LAPS | Cancellation because of no payment of annual fees |