JP5311791B2 - ポリシリコン膜の形成方法 - Google Patents
ポリシリコン膜の形成方法 Download PDFInfo
- Publication number
- JP5311791B2 JP5311791B2 JP2007266558A JP2007266558A JP5311791B2 JP 5311791 B2 JP5311791 B2 JP 5311791B2 JP 2007266558 A JP2007266558 A JP 2007266558A JP 2007266558 A JP2007266558 A JP 2007266558A JP 5311791 B2 JP5311791 B2 JP 5311791B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- film
- polysilicon
- forming
- phosphorus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims description 73
- 229920005591 polysilicon Polymers 0.000 title claims description 72
- 238000000034 method Methods 0.000 title claims description 35
- 239000002245 particle Substances 0.000 claims description 52
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 33
- 229910052698 phosphorus Inorganic materials 0.000 claims description 33
- 239000011574 phosphorus Substances 0.000 claims description 33
- 239000013078 crystal Substances 0.000 claims description 30
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 23
- 229910052796 boron Inorganic materials 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 22
- 230000008569 process Effects 0.000 claims description 17
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 12
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 229910000077 silane Inorganic materials 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 227
- 239000010408 film Substances 0.000 description 106
- 235000012431 wafers Nutrition 0.000 description 36
- 230000015572 biosynthetic process Effects 0.000 description 19
- 230000007246 mechanism Effects 0.000 description 14
- 238000000137 annealing Methods 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 9
- 238000012545 processing Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910018540 Si C Inorganic materials 0.000 description 2
- 229910018557 Si O Inorganic materials 0.000 description 2
- 229910007991 Si-N Inorganic materials 0.000 description 2
- 229910006294 Si—N Inorganic materials 0.000 description 2
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910015900 BF3 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004033 diameter control Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003921 particle size analysis Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/0256—Selenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Recrystallisation Techniques (AREA)
- Chemical Vapour Deposition (AREA)
Description
まず、ヒータ4によりウエハボート20のセンター部(上下方向の中央部)の温度が好ましくは400〜650℃、例えば525℃となるように反応管10内を加熱しておき、例えば150枚のウエハWを保持したウエハボート20を反応管10内に下方開口部から昇降台16により搬入する。
ここでは、図1の装置を用い、50枚のウエハを搭載したウエハボートを搬入し、成膜ガスとしてSiH4ガスを用い、ドープ用ガスとしてPH3ガスを用いてリンドープポリシリコン膜を成膜する際に、粒径調整用ガスとしてC2H4ガス、N2Oガス、NOガスを用いて実験を行った。基本条件を以下に示す。
(1)成膜処理
温度:525℃
反応管内の圧力:53.3Pa
SiH4ガス流量:500mL/min(sccm)
PH3ガス流量:56.3mL/min(sccm)
(2)アニール処理
温度:950℃
反応管内の圧力:96000Pa
アニールガス(N2ガス)流量:10000mL/min(sccm)
一次イオン種:Cs +
一次加速電圧:3.0kV
検出領域:180mm×180mm
測定機:PHI ADEPT1010
その結果を図2に示す。(a)はC2H4ガス、(b)はN2Oガス、(c)はNOガスの結果である。これらから、C2H4ガスを用いることにより、膜中にCが導入され、N2Oガスを用いることにより、主にOが導入され(ただしNも導入される)、NOガスを用いることにより、主にNが導入され(ただしOも導入される)、その導入量は流量にほぼ比例することがわかる。
2;加熱炉
3;断熱体
4;ヒータ
10;反応管
13;マニホールド
14;キャップ部
20;ウエハボート
21;成膜ガス供給機構
22;ドープ用ガス供給機構
23;粒径調整用ガス供給機構
38;排気管
39;真空ポンプ
50;制御部
W;半導体ウエハ(被処理体)
Claims (4)
- リンまたはボロンがドープされたポリシリコン膜を形成するポリシリコン膜の形成方法であって、
反応容器内に被処理基板を配置し、被処理基板を減圧雰囲気下で加熱しながら、シリコン成膜用ガスと、リンまたはボロンを膜中にドープするためのガスと、ポリシリコン結晶の柱状化を妨げてポリシリコン結晶の微細化を促進する成分を含む粒径調整用ガスとを前記反応容器内に導入し、被処理基板上にリンまたはボロンがドープされたアモルファスシリコン膜を成膜し、その後、前記アモルファスシリコン膜を熱処理して、リンまたはボロンがドープされたポリシリコン膜を形成する工程を備え、
前記粒径調整用ガスをC 2 H 4 ガスとし、
前記C 2 H 4 ガスの流量を1〜100mL/minとして、
前記ポリシリコン膜のポリシリコン結晶の粒径を、平均粒径で100nm以下とすることを特徴とするポリシリコン膜の形成方法。 - リンまたはボロンがドープされたポリシリコン膜を形成するポリシリコン膜の形成方法であって、
反応容器内に被処理基板を配置し、被処理基板を減圧雰囲気下で加熱しながら、シリコン成膜用ガスと、リンまたはボロンを膜中にドープするためのガスと、ポリシリコン結晶の柱状化を妨げてポリシリコン結晶の微細化を促進する成分を含む粒径調整用ガスとを前記反応容器内に導入し、被処理基板上にリンまたはボロンがドープされたポリシリコン膜を成膜する工程を備え、
前記粒径調整用ガスをC 2 H 4 ガスとし、
前記C 2 H 4 ガスの流量を1〜100mL/minとして、
前記ポリシリコン膜のポリシリコン結晶の粒径を、平均粒径で100nm以下とすることを特徴とするポリシリコン膜の形成方法。 - 前記シリコン成膜用ガスは、シラン系ガスであることを特徴とする請求項1または請求項2に記載のポリシリコン膜の形成方法。
- 前記被処理基板は、複数枚の被処理基板を、間隔をあけて積み重ねた状態で、前記反応容器内に配置されることを特徴とする請求項1から請求項3のいずれか一項に記載のポリシリコン膜の形成方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007266558A JP5311791B2 (ja) | 2007-10-12 | 2007-10-12 | ポリシリコン膜の形成方法 |
TW097138788A TWI489524B (zh) | 2007-10-12 | 2008-10-08 | 形成多晶矽膜之方法 |
US12/285,574 US7923357B2 (en) | 2007-10-12 | 2008-10-08 | Method for forming poly-silicon film |
KR1020080099372A KR101196576B1 (ko) | 2007-10-12 | 2008-10-10 | 폴리실리콘막 형성 방법 |
CN2008101675009A CN101409232B (zh) | 2007-10-12 | 2008-10-10 | 多晶硅膜的形成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007266558A JP5311791B2 (ja) | 2007-10-12 | 2007-10-12 | ポリシリコン膜の形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009099582A JP2009099582A (ja) | 2009-05-07 |
JP5311791B2 true JP5311791B2 (ja) | 2013-10-09 |
Family
ID=40572163
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007266558A Active JP5311791B2 (ja) | 2007-10-12 | 2007-10-12 | ポリシリコン膜の形成方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7923357B2 (ja) |
JP (1) | JP5311791B2 (ja) |
KR (1) | KR101196576B1 (ja) |
CN (1) | CN101409232B (ja) |
TW (1) | TWI489524B (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4967066B2 (ja) * | 2010-04-27 | 2012-07-04 | 東京エレクトロン株式会社 | アモルファスシリコン膜の成膜方法および成膜装置 |
JP5544343B2 (ja) * | 2010-10-29 | 2014-07-09 | 東京エレクトロン株式会社 | 成膜装置 |
JP5794949B2 (ja) * | 2012-05-29 | 2015-10-14 | 東京エレクトロン株式会社 | シリコン膜の形成方法およびその形成装置 |
JP6059085B2 (ja) * | 2013-05-27 | 2017-01-11 | 東京エレクトロン株式会社 | トレンチを充填する方法及び処理装置 |
CN104217940A (zh) * | 2014-09-24 | 2014-12-17 | 上海华力微电子有限公司 | 多晶硅薄膜的制备方法 |
JP2016092051A (ja) * | 2014-10-30 | 2016-05-23 | 東京エレクトロン株式会社 | 凹部を充填する方法及び処理装置 |
KR101706747B1 (ko) * | 2015-05-08 | 2017-02-15 | 주식회사 유진테크 | 비정질 박막의 형성방법 |
JP6541591B2 (ja) * | 2016-03-07 | 2019-07-10 | 東京エレクトロン株式会社 | 凹部内の結晶成長方法および処理装置 |
JP6554438B2 (ja) | 2016-03-30 | 2019-07-31 | 東京エレクトロン株式会社 | シリコン膜の形成方法および形成装置 |
CN106328586A (zh) * | 2016-08-24 | 2017-01-11 | 武汉华星光电技术有限公司 | 低温多晶硅阵列基板的制备方法、阵列基板以及显示面板 |
US20190390949A1 (en) * | 2018-06-21 | 2019-12-26 | Applied Materials, Inc. | Methods, apparatuses and systems for conductive film layer thickness measurements |
JP7190880B2 (ja) | 2018-11-26 | 2022-12-16 | 東京エレクトロン株式会社 | 半導体膜の形成方法及び成膜装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS532552B2 (ja) * | 1974-03-30 | 1978-01-28 | ||
DE3420887A1 (de) * | 1984-06-05 | 1985-12-05 | Telefunken electronic GmbH, 7100 Heilbronn | Solarzelle |
CN1021528C (zh) * | 1991-03-19 | 1993-07-07 | 浙江大学 | 半导体气相外延的减压方法及*** |
JPH0786173A (ja) | 1993-09-16 | 1995-03-31 | Tokyo Electron Ltd | 成膜方法 |
JP3432601B2 (ja) * | 1994-06-17 | 2003-08-04 | 東京エレクトロン株式会社 | 成膜方法 |
JP2817645B2 (ja) * | 1995-01-25 | 1998-10-30 | 日本電気株式会社 | 半導体装置の製造方法 |
JP3373990B2 (ja) | 1995-10-30 | 2003-02-04 | 東京エレクトロン株式会社 | 成膜装置及びその方法 |
JP2874618B2 (ja) * | 1995-11-22 | 1999-03-24 | 日本電気株式会社 | シリコン半導体基板及びその製造方法 |
US6429101B1 (en) * | 1999-01-29 | 2002-08-06 | International Business Machines Corporation | Method of forming thermally stable polycrystal to single crystal electrical contact structure |
US6559039B2 (en) * | 2001-05-15 | 2003-05-06 | Applied Materials, Inc. | Doped silicon deposition process in resistively heated single wafer chamber |
JP2004146735A (ja) * | 2002-10-28 | 2004-05-20 | Mitsubishi Heavy Ind Ltd | シリコン光起電力素子及びその製造方法 |
US7166528B2 (en) * | 2003-10-10 | 2007-01-23 | Applied Materials, Inc. | Methods of selective deposition of heavily doped epitaxial SiGe |
JP3872071B2 (ja) * | 2004-05-19 | 2007-01-24 | エルピーダメモリ株式会社 | 半導体装置及びその製造方法 |
US7432141B2 (en) * | 2004-09-08 | 2008-10-07 | Sandisk 3D Llc | Large-grain p-doped polysilicon films for use in thin film transistors |
KR100632463B1 (ko) * | 2005-02-07 | 2006-10-11 | 삼성전자주식회사 | 에피택셜 반도체 기판의 제조 방법과 이를 이용한 이미지센서의 제조 방법, 에피택셜 반도체 기판 및 이를 이용한이미지 센서 |
-
2007
- 2007-10-12 JP JP2007266558A patent/JP5311791B2/ja active Active
-
2008
- 2008-10-08 TW TW097138788A patent/TWI489524B/zh not_active IP Right Cessation
- 2008-10-08 US US12/285,574 patent/US7923357B2/en active Active
- 2008-10-10 CN CN2008101675009A patent/CN101409232B/zh active Active
- 2008-10-10 KR KR1020080099372A patent/KR101196576B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR101196576B1 (ko) | 2012-11-01 |
CN101409232B (zh) | 2012-04-25 |
US20090124077A1 (en) | 2009-05-14 |
TW200921766A (en) | 2009-05-16 |
KR20090037821A (ko) | 2009-04-16 |
CN101409232A (zh) | 2009-04-15 |
TWI489524B (zh) | 2015-06-21 |
US7923357B2 (en) | 2011-04-12 |
JP2009099582A (ja) | 2009-05-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5311791B2 (ja) | ポリシリコン膜の形成方法 | |
US10283405B2 (en) | Method and apparatus for forming silicon film and storage medium | |
US7354858B2 (en) | Film formation method and apparatus for semiconductor process | |
KR101451716B1 (ko) | 성막 방법 및 성막 장치 | |
WO2012029661A1 (ja) | 半導体装置の製造方法及び基板処理装置 | |
KR101552856B1 (ko) | 성막 방법 및 성막 장치 | |
JP5805461B2 (ja) | 基板処理装置および半導体装置の製造方法 | |
KR100974969B1 (ko) | 실리콘 질화막의 형성 방법 | |
JP2020136301A (ja) | 基板処理装置、半導体装置の製造方法、およびプログラム | |
JPH0786174A (ja) | 成膜装置 | |
US20060021570A1 (en) | Reduction in size of hemispherical grains of hemispherical grained film | |
US5677235A (en) | Method for forming silicon film | |
US11587788B2 (en) | Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium | |
KR102072272B1 (ko) | 붕소 도프 실리콘 게르마늄막의 형성 방법 및 형성 장치, 및 기억 매체 | |
JP3432601B2 (ja) | 成膜方法 | |
JP2012186275A (ja) | 基板処理装置及び半導体装置の製造方法 | |
US20170256450A1 (en) | Recess filling method and processing apparatus | |
US20220301854A1 (en) | Method of processing substrate, method of manufacturing semiconductor device, substrate processing system, and recording medium | |
KR101066137B1 (ko) | 반도체 장치의 제조 방법 및 기판 처리 장치 | |
US10388762B2 (en) | Method of manufacturing semiconductor device | |
CN111748788A (zh) | 成膜方法和成膜装置 | |
JP2006229070A (ja) | 半導体装置の製造方法 | |
JP2010080811A (ja) | 半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100621 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100621 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20100622 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20121206 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121211 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130207 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130604 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130702 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 5311791 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |