JP5296612B2 - 積分回路および光検出装置 - Google Patents
積分回路および光検出装置 Download PDFInfo
- Publication number
- JP5296612B2 JP5296612B2 JP2009147620A JP2009147620A JP5296612B2 JP 5296612 B2 JP5296612 B2 JP 5296612B2 JP 2009147620 A JP2009147620 A JP 2009147620A JP 2009147620 A JP2009147620 A JP 2009147620A JP 5296612 B2 JP5296612 B2 JP 5296612B2
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- JP
- Japan
- Prior art keywords
- switch
- terminal
- pmos transistor
- input terminal
- amplifier circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 230000010354 integration Effects 0.000 title claims description 19
- 238000001514 detection method Methods 0.000 claims description 13
- 230000003287 optical effect Effects 0.000 claims description 2
- 238000007599 discharging Methods 0.000 claims 1
- 239000003990 capacitor Substances 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000003321 amplification Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
- H03F3/082—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light with FET's
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J1/46—Electric circuits using a capacitor
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
- H03F3/087—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light with IC amplifier blocks
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
- H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
- H03F3/3022—CMOS common source output SEPP amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45183—Long tailed pairs
- H03F3/45192—Folded cascode stages
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
- H03F3/45928—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection using IC blocks as the active amplifying circuit
- H03F3/45968—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection using IC blocks as the active amplifying circuit by offset reduction
- H03F3/45973—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection using IC blocks as the active amplifying circuit by offset reduction by using a feedback circuit
- H03F3/45977—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection using IC blocks as the active amplifying circuit by offset reduction by using a feedback circuit using switching means, e.g. sample and hold
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/264—An operational amplifier based integrator or transistor based integrator being used in an amplifying circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/411—Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising two power stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45166—Only one input of the dif amp being used for an input signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45174—Indexing scheme relating to differential amplifiers the application of the differential amplifier being in an integrator circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45512—Indexing scheme relating to differential amplifiers the FBC comprising one or more capacitors, not being switched capacitors, and being coupled between the LC and the IC
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45514—Indexing scheme relating to differential amplifiers the FBC comprising one or more switched capacitors, and being coupled between the LC and the IC
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45536—Indexing scheme relating to differential amplifiers the FBC comprising a switch and being coupled between the LC and the IC
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Amplifiers (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
Description
Claims (3)
- 第1入力端子,第2入力端子および出力端子を有する増幅回路であって、PMOSトランジスタおよびNMOSトランジスタそれぞれのドレイン端子が互いに接続されてなり当該接続点が前記出力端子に接続される駆動部と、第1基準電位が入力される第1基準電位入力端子と前記PMOSトランジスタのゲート端子との間に設けられ前記PMOSトランジスタのゲート端子に前記第1基準電位を印加することで前記PMOSトランジスタをオフ状態とする第1スイッチと、を含む増幅回路と、
前記増幅回路の前記第1入力端子と前記出力端子との間に設けられた容量素子と、
前記増幅回路の前記第1入力端子と前記出力端子との間に前記容量素子に対して並列的に設けられた第2スイッチと、
を備え、
前記第2スイッチを閉じて前記容量素子を放電する際に前記第1スイッチをも閉じる、
ことを特徴とする積分回路。 - 第2基準電位が入力される第2基準電位入力端子と前記容量素子の一端との間に設けられ、前記容量素子の一端に前記第2基準電位を印加する第3スイッチを更に備えることを特徴とする請求項1に記載の積分回路。
- 請求項1または2に記載の積分回路と、
入射光量に応じた量の電荷を発生し、その発生した電荷を前記積分回路の前記増幅回路の前記第1入力端子に入力させるフォトダイオードと、
を備えることを特徴とする光検出装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009147620A JP5296612B2 (ja) | 2009-06-22 | 2009-06-22 | 積分回路および光検出装置 |
EP10791976.3A EP2448116B1 (en) | 2009-06-22 | 2010-06-10 | Amplifier circuit, integrating circuit, and light-detection device |
KR1020117022670A KR101721271B1 (ko) | 2009-06-22 | 2010-06-10 | 증폭 회로, 적분 회로, 및 광 검출 장치 |
US13/379,126 US8717105B2 (en) | 2009-06-22 | 2010-06-10 | Amplifier circuit, integrating circuit, and light-detection device |
CN201080027821.4A CN102460963B (zh) | 2009-06-22 | 2010-06-10 | 放大电路、积分电路及光检测装置 |
PCT/JP2010/059838 WO2010150658A1 (ja) | 2009-06-22 | 2010-06-10 | 増幅回路、積分回路および光検出装置 |
TW099119738A TWI521863B (zh) | 2009-06-22 | 2010-06-17 | Integral circuit and light detection device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009147620A JP5296612B2 (ja) | 2009-06-22 | 2009-06-22 | 積分回路および光検出装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011004326A JP2011004326A (ja) | 2011-01-06 |
JP5296612B2 true JP5296612B2 (ja) | 2013-09-25 |
Family
ID=43386430
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009147620A Active JP5296612B2 (ja) | 2009-06-22 | 2009-06-22 | 積分回路および光検出装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8717105B2 (ja) |
EP (1) | EP2448116B1 (ja) |
JP (1) | JP5296612B2 (ja) |
KR (1) | KR101721271B1 (ja) |
CN (1) | CN102460963B (ja) |
TW (1) | TWI521863B (ja) |
WO (1) | WO2010150658A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011004327A (ja) * | 2009-06-22 | 2011-01-06 | Hamamatsu Photonics Kk | 積分回路および光検出装置 |
JP5973832B2 (ja) | 2012-08-02 | 2016-08-23 | 株式会社堀場製作所 | 増幅器及び放射線検出器 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4988954A (en) * | 1989-04-28 | 1991-01-29 | Crystal Semiconductor Corporation | Low power output stage circuitry in an amplifier |
JP3302030B2 (ja) * | 1990-10-09 | 2002-07-15 | 株式会社東芝 | バッファ回路 |
JP2728832B2 (ja) * | 1992-09-18 | 1998-03-18 | 浜松ホトニクス株式会社 | 画像読取装置 |
US5363059A (en) * | 1993-06-17 | 1994-11-08 | Texas Instruments Incorporated | Transconductance amplifier |
US6107883A (en) * | 1998-09-10 | 2000-08-22 | Seiko Epson Corporation | High gain, high speed rail-to-rail amplifier |
CN1194469C (zh) * | 2001-12-28 | 2005-03-23 | 北京六合万通微电子技术有限公司 | 低功耗的模拟信号采样保持电路 |
AU2003283134A1 (en) * | 2002-11-07 | 2004-06-07 | Xenics N.V. | Read-out circuit for infrared detectors. |
JP4356816B2 (ja) | 2005-03-09 | 2009-11-04 | 三菱農機株式会社 | 移植機 |
JP2007036653A (ja) | 2005-07-27 | 2007-02-08 | Oki Electric Ind Co Ltd | 演算増幅器及びそれを用いた定電流発生回路 |
JP2007104358A (ja) * | 2005-10-05 | 2007-04-19 | Matsushita Electric Ind Co Ltd | Cmos増幅装置 |
JP2008029098A (ja) * | 2006-07-20 | 2008-02-07 | Oki Electric Ind Co Ltd | 昇圧回路 |
JP2008092272A (ja) * | 2006-10-02 | 2008-04-17 | New Japan Radio Co Ltd | 増幅回路 |
KR20090015249A (ko) * | 2007-08-08 | 2009-02-12 | 삼성전자주식회사 | 차동 증폭기, 및 상기 차동 증폭기의 신호들 증폭 방법, 및상기 차동 증폭기를 포함하는 디스플레이 구동 장치 |
JP4661876B2 (ja) * | 2008-01-18 | 2011-03-30 | ソニー株式会社 | 固体撮像素子、およびカメラシステム |
-
2009
- 2009-06-22 JP JP2009147620A patent/JP5296612B2/ja active Active
-
2010
- 2010-06-10 US US13/379,126 patent/US8717105B2/en active Active
- 2010-06-10 KR KR1020117022670A patent/KR101721271B1/ko active IP Right Grant
- 2010-06-10 CN CN201080027821.4A patent/CN102460963B/zh active Active
- 2010-06-10 EP EP10791976.3A patent/EP2448116B1/en active Active
- 2010-06-10 WO PCT/JP2010/059838 patent/WO2010150658A1/ja active Application Filing
- 2010-06-17 TW TW099119738A patent/TWI521863B/zh active
Also Published As
Publication number | Publication date |
---|---|
JP2011004326A (ja) | 2011-01-06 |
CN102460963A (zh) | 2012-05-16 |
KR101721271B1 (ko) | 2017-03-29 |
WO2010150658A1 (ja) | 2010-12-29 |
CN102460963B (zh) | 2015-03-25 |
US20130038393A1 (en) | 2013-02-14 |
EP2448116A1 (en) | 2012-05-02 |
EP2448116B1 (en) | 2019-01-16 |
KR20120036798A (ko) | 2012-04-18 |
US8717105B2 (en) | 2014-05-06 |
EP2448116A4 (en) | 2012-12-26 |
TWI521863B (zh) | 2016-02-11 |
TW201123712A (en) | 2011-07-01 |
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