JP5284944B2 - 電着されたコンタクトを形成する構造体及び方法 - Google Patents
電着されたコンタクトを形成する構造体及び方法 Download PDFInfo
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- JP5284944B2 JP5284944B2 JP2009501763A JP2009501763A JP5284944B2 JP 5284944 B2 JP5284944 B2 JP 5284944B2 JP 2009501763 A JP2009501763 A JP 2009501763A JP 2009501763 A JP2009501763 A JP 2009501763A JP 5284944 B2 JP5284944 B2 JP 5284944B2
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- Prior art keywords
- layer
- contact
- cobalt
- nickel
- cavity
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- 238000000034 method Methods 0.000 title claims description 37
- 229910052751 metal Inorganic materials 0.000 claims description 46
- 239000002184 metal Substances 0.000 claims description 46
- 239000010948 rhodium Substances 0.000 claims description 37
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 29
- 229910021332 silicide Inorganic materials 0.000 claims description 29
- 230000004888 barrier function Effects 0.000 claims description 28
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 28
- 229910052707 ruthenium Inorganic materials 0.000 claims description 27
- 229910052703 rhodium Inorganic materials 0.000 claims description 24
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 23
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 19
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 19
- 229910052741 iridium Inorganic materials 0.000 claims description 17
- 229910045601 alloy Inorganic materials 0.000 claims description 16
- 239000000956 alloy Substances 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 16
- 238000009792 diffusion process Methods 0.000 claims description 14
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 13
- 229910052759 nickel Inorganic materials 0.000 claims description 13
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 12
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 11
- 229910052697 platinum Inorganic materials 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 238000009713 electroplating Methods 0.000 claims description 9
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 6
- 239000005368 silicate glass Substances 0.000 claims description 6
- 229910052762 osmium Inorganic materials 0.000 claims description 4
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- PCLURTMBFDTLSK-UHFFFAOYSA-N nickel platinum Chemical compound [Ni].[Pt] PCLURTMBFDTLSK-UHFFFAOYSA-N 0.000 claims description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims 4
- WRXZUEJODFSBQX-UHFFFAOYSA-N [Co].[Os] Chemical compound [Co].[Os] WRXZUEJODFSBQX-UHFFFAOYSA-N 0.000 claims 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims 2
- DYYXTEOEXHZMMP-UHFFFAOYSA-N cobalt iridium Chemical compound [Co].[Co].[Co].[Ir] DYYXTEOEXHZMMP-UHFFFAOYSA-N 0.000 claims 2
- OQCGPOBCYAOYSD-UHFFFAOYSA-N cobalt palladium Chemical compound [Co].[Co].[Co].[Pd].[Pd] OQCGPOBCYAOYSD-UHFFFAOYSA-N 0.000 claims 2
- GUBSQCSIIDQXLB-UHFFFAOYSA-N cobalt platinum Chemical compound [Co].[Pt].[Pt].[Pt] GUBSQCSIIDQXLB-UHFFFAOYSA-N 0.000 claims 2
- SUCYXRASDBOYGB-UHFFFAOYSA-N cobalt rhodium Chemical compound [Co].[Rh] SUCYXRASDBOYGB-UHFFFAOYSA-N 0.000 claims 2
- VLWBWEUXNYUQKJ-UHFFFAOYSA-N cobalt ruthenium Chemical compound [Co].[Ru] VLWBWEUXNYUQKJ-UHFFFAOYSA-N 0.000 claims 2
- ZMWJMNRNTMMKBX-UHFFFAOYSA-N nickel rhodium Chemical compound [Ni].[Ni].[Ni].[Rh] ZMWJMNRNTMMKBX-UHFFFAOYSA-N 0.000 claims 2
- DEPMYWCZAIMWCR-UHFFFAOYSA-N nickel ruthenium Chemical compound [Ni].[Ru] DEPMYWCZAIMWCR-UHFFFAOYSA-N 0.000 claims 2
- UMANFNFAZLPXHW-UHFFFAOYSA-N [Ni].[Os] Chemical compound [Ni].[Os] UMANFNFAZLPXHW-UHFFFAOYSA-N 0.000 claims 1
- BSIDXUHWUKTRQL-UHFFFAOYSA-N nickel palladium Chemical compound [Ni].[Pd] BSIDXUHWUKTRQL-UHFFFAOYSA-N 0.000 claims 1
- 239000010949 copper Substances 0.000 description 39
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- 230000008569 process Effects 0.000 description 21
- 239000010936 titanium Substances 0.000 description 20
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 description 18
- 239000000654 additive Substances 0.000 description 17
- 238000005229 chemical vapour deposition Methods 0.000 description 17
- 238000007747 plating Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 12
- 229910052719 titanium Inorganic materials 0.000 description 11
- 229910052721 tungsten Inorganic materials 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 150000002739 metals Chemical class 0.000 description 9
- 230000000996 additive effect Effects 0.000 description 8
- 238000000231 atomic layer deposition Methods 0.000 description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 8
- 239000010937 tungsten Substances 0.000 description 8
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- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 7
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- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 238000005240 physical vapour deposition Methods 0.000 description 7
- 229910052725 zinc Inorganic materials 0.000 description 7
- 239000011701 zinc Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
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- 150000001875 compounds Chemical class 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 229910052717 sulfur Inorganic materials 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 4
- 239000003638 chemical reducing agent Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- -1 TaN Chemical class 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 3
- RBFDCQDDCJFGIK-UHFFFAOYSA-N arsenic germanium Chemical compound [Ge].[As] RBFDCQDDCJFGIK-UHFFFAOYSA-N 0.000 description 3
- 229910052794 bromium Inorganic materials 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910000365 copper sulfate Inorganic materials 0.000 description 3
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 3
- 238000004070 electrodeposition Methods 0.000 description 3
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- 229910052740 iodine Inorganic materials 0.000 description 3
- 238000005272 metallurgy Methods 0.000 description 3
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- 238000001878 scanning electron micrograph Methods 0.000 description 3
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- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- 239000004721 Polyphenylene oxide Substances 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 101100107923 Vitis labrusca AMAT gene Proteins 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
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- 150000003951 lactams Chemical class 0.000 description 2
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
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- VEPOHXYIFQMVHW-XOZOLZJESA-N 2,3-dihydroxybutanedioic acid (2S,3S)-3,4-dimethyl-2-phenylmorpholine Chemical group OC(C(O)C(O)=O)C(O)=O.C[C@H]1[C@@H](OCCN1C)c1ccccc1 VEPOHXYIFQMVHW-XOZOLZJESA-N 0.000 description 1
- OBDVFOBWBHMJDG-UHFFFAOYSA-N 3-mercapto-1-propanesulfonic acid Chemical group OS(=O)(=O)CCCS OBDVFOBWBHMJDG-UHFFFAOYSA-N 0.000 description 1
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- RDJNSLGMMZMJNP-UHFFFAOYSA-N [Ru].N(=O)OS(O)(=O)=O Chemical compound [Ru].N(=O)OS(O)(=O)=O RDJNSLGMMZMJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76846—Layer combinations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53242—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
- H01L23/53252—Additional layers associated with noble-metal layers, e.g. adhesion, barrier, cladding layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Electroplating Methods And Accessories (AREA)
Description
Claims (5)
- コンタクト金属構造体であって、
基板上に配置された少なくとも3のアスペクト比を有するキャビティを有するパターン形成された、リン酸シリケート・ガラス(PSG)、ホウ素がドープされたPSG(BPSG)、ドープされていないシリケート・ガラス(USG)、又はテトラエチルオルソシリケート(TEOS)の誘電体層と、
前記キャビティの底部に配置された、白金、パラジウム、オスミウム、コバルト白金、コバルト・ルテニウム、コバルト・ロジウム、コバルト・イリジウム、コバルト・パラジウム、コバルト・オスミウム、ニッケル白金、ニッケル・ルテニウム、ニッケル・ロジウム、ニッケル・イリジウム、ニッケル・パラジウム、又はニッケル・オスミウムのシリサイド層と、
前記底部において前記シリサイド層に接触する前記キャビティ内及び前記誘電体の上部に配置された、TiとTiNのスタックからなるコンタクト層と、
前記キャビティ内及び前記コンタクト層の上部に配置された、ルテニウム、白金、イリジウム、又はロジウムからなる拡散バリア層と、
前記キャビティ内及び前記拡散バリア層の上部にあり、ロジウム、ルテニウム、またはこれらの合金から成る群の少なくとも1つの部材から選択される金属充填層と、を含むコンタクト金属構造体。 - 前記シリサイド層は5〜40ナノメートルの厚さを有し、前記拡散バリア層は10〜200オングストロームの厚さを有する、請求項1に記載のコンタクト金属構造体。
- 基板上に配置された少なくとも3のアスペクト比を有するキャビティを有するパターン形成された、リン酸シリケート・ガラス(PSG)、ホウ素がドープされたPSG(BPSG)、ドープされていないシリケート・ガラス(USG)、又はテトラエチルオルソシリケート(TEOS)からなる誘電体層を形成するステップと、
前記キャビティの底部に配置された、白金、パラジウム、オスミウム、コバルト白金、コバルト・ルテニウム、コバルト・ロジウム、コバルト・イリジウム、コバルト・パラジウム、コバルト・オスミウム、ニッケル白金、ニッケル・ルテニウム、ニッケル・ロジウム、ニッケル・イリジウム、ニッケル・パラジウム、又はニッケル・オスミウムのシリサイド層を形成するステップと、
前記キャビティの底部において前記シリサイド層に接触するキャビティ内及び前記誘電体層の上部に配置された、TiとTiNのスタックからなるコンタクト層を形成するステップと、
前記キャビティ内及び前記コンタクト層の上部に配置された、ルテニウム、白金、イリジウム、又はロジウムからなる拡散バリア層を堆積させるステップと、
前記キャビティ内及び前記拡散バリア層の上部に、ロジウム、ルテニウム、またはこれらの合金から成る群から選択される少なくとも1つの部材の金属充填層を電気めっきするステップと、を含む方法。 - 前記金属充填層の電気めっき後の前記基板の表面をCMPによって平坦化するステップをさらに含む、請求項3に記載の方法。
- 前記シリサイド層は5〜40ナノメートルの厚さを有し、前記拡散バリア層は10〜200オングストロームの厚さを有する、請求項3に記載の方法。
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US11/308,433 US7405154B2 (en) | 2006-03-24 | 2006-03-24 | Structure and method of forming electrodeposited contacts |
US11/308,433 | 2006-03-24 | ||
PCT/US2007/064946 WO2007112361A2 (en) | 2006-03-24 | 2007-03-26 | Structure and method of forming electrodeposited contacts |
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JP2009531838A JP2009531838A (ja) | 2009-09-03 |
JP5284944B2 true JP5284944B2 (ja) | 2013-09-11 |
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JP (1) | JP5284944B2 (ja) |
CN (1) | CN101395720A (ja) |
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2006
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WO2007112361A3 (en) | 2008-04-10 |
JP2009531838A (ja) | 2009-09-03 |
US20090014878A1 (en) | 2009-01-15 |
US7405154B2 (en) | 2008-07-29 |
WO2007112361A2 (en) | 2007-10-04 |
TW200802706A (en) | 2008-01-01 |
CN101395720A (zh) | 2009-03-25 |
US7851357B2 (en) | 2010-12-14 |
US20110084393A1 (en) | 2011-04-14 |
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US20070222066A1 (en) | 2007-09-27 |
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