JP5283824B2 - 膜形成組成物 - Google Patents
膜形成組成物 Download PDFInfo
- Publication number
- JP5283824B2 JP5283824B2 JP2006009430A JP2006009430A JP5283824B2 JP 5283824 B2 JP5283824 B2 JP 5283824B2 JP 2006009430 A JP2006009430 A JP 2006009430A JP 2006009430 A JP2006009430 A JP 2006009430A JP 5283824 B2 JP5283824 B2 JP 5283824B2
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- Prior art keywords
- film
- protective
- forming composition
- diffusion
- silicon wafer
- Prior art date
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- 239000000203 mixture Substances 0.000 title claims description 58
- 230000001681 protective effect Effects 0.000 claims description 99
- 238000009792 diffusion process Methods 0.000 claims description 65
- 239000012535 impurity Substances 0.000 claims description 44
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 25
- 229910052710 silicon Inorganic materials 0.000 claims description 25
- 239000010703 silicon Substances 0.000 claims description 25
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- 229910052733 gallium Inorganic materials 0.000 claims description 15
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- 229910052698 phosphorus Inorganic materials 0.000 claims description 12
- 239000011574 phosphorus Substances 0.000 claims description 12
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- 230000015572 biosynthetic process Effects 0.000 claims description 6
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- 150000004703 alkoxides Chemical class 0.000 claims description 4
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- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 4
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- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- GCPVYIPZZUPXPB-UHFFFAOYSA-I tantalum(v) bromide Chemical compound Br[Ta](Br)(Br)(Br)Br GCPVYIPZZUPXPB-UHFFFAOYSA-I 0.000 description 1
- OEIMLTQPLAGXMX-UHFFFAOYSA-I tantalum(v) chloride Chemical compound Cl[Ta](Cl)(Cl)(Cl)Cl OEIMLTQPLAGXMX-UHFFFAOYSA-I 0.000 description 1
- PUGUQINMNYINPK-UHFFFAOYSA-N tert-butyl 4-(2-chloroacetyl)piperazine-1-carboxylate Chemical compound CC(C)(C)OC(=O)N1CCN(C(=O)CCl)CC1 PUGUQINMNYINPK-UHFFFAOYSA-N 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WOZZOSDBXABUFO-UHFFFAOYSA-N tri(butan-2-yloxy)alumane Chemical compound [Al+3].CCC(C)[O-].CCC(C)[O-].CCC(C)[O-] WOZZOSDBXABUFO-UHFFFAOYSA-N 0.000 description 1
- VPYJNCGUESNPMV-UHFFFAOYSA-N triallylamine Chemical compound C=CCN(CC=C)CC=C VPYJNCGUESNPMV-UHFFFAOYSA-N 0.000 description 1
- QVOFCQBZXGLNAA-UHFFFAOYSA-M tributyl(methyl)azanium;hydroxide Chemical compound [OH-].CCCC[N+](C)(CCCC)CCCC QVOFCQBZXGLNAA-UHFFFAOYSA-M 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
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- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- HUZZQXYTKNNCOU-UHFFFAOYSA-N triethyl(methoxy)silane Chemical compound CC[Si](CC)(CC)OC HUZZQXYTKNNCOU-UHFFFAOYSA-N 0.000 description 1
- RXJWOBGGPLEFEE-UHFFFAOYSA-N triethyl(propoxy)silane Chemical compound CCCO[Si](CC)(CC)CC RXJWOBGGPLEFEE-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 description 1
- UAEJRRZPRZCUBE-UHFFFAOYSA-N trimethoxyalumane Chemical compound [Al+3].[O-]C.[O-]C.[O-]C UAEJRRZPRZCUBE-UHFFFAOYSA-N 0.000 description 1
- PHPGKIATZDCVHL-UHFFFAOYSA-N trimethyl(propoxy)silane Chemical compound CCCO[Si](C)(C)C PHPGKIATZDCVHL-UHFFFAOYSA-N 0.000 description 1
- YFTHZRPMJXBUME-UHFFFAOYSA-N tripropylamine Chemical compound CCCN(CCC)CCC YFTHZRPMJXBUME-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
- H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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Description
以下に、本発明の膜形成組成物について説明する。本発明の膜形成組成物は、高分子ケイ素化合物と、不純物拡散の拡散源となる元素と共有結合して価電子が8個となる保護元素を含む化合物と、を含む膜組成物である。
本発明に用いられる高分子ケイ素化合物としては、特に限定されるものではないが、例えば、主鎖にSi−O結合を有するシロキサン系高分子化合物、主鎖にSi−C結合を有するシリコンカーバイド系高分子化合物、主鎖にSi−Si結合を有するポリシラン系高分子化合物、および主鎖にSi−N結合を有するシラザン系高分子化合物よりなる群から選ばれる1種以上である。また、これらの任意の混合物を用いることもできる。用いられる基板との選択比が大きくなるよう、適宜、化合物を選択することが可能である。また、この中でも、特に、シロキサン系高分子化合物が好ましく用いられる。
本発明の膜形成組成物における、高分子ケイ素化合物としてのシロキサン系高分子化合物は、下記化学式(A)で示されるアルコキシシランのうちの少なくとも1種を出発原料とする縮重合物であることが好ましい。
R1は、水素原子、又は1価の有機基であり、
R2は、1価の有機基であり、
nは、1〜3の整数を示す。)
(i)n=1の場合、モノメチルトリメトキシシラン、モノメチルトリエトキシシラン、モノメチルトリプロポキシシラン、モノエチルトリメトキシシラン、モノエチルトリエトキシシラン、モノエチルトリプロポキシシラン、モノプロピルトリメトキシシラン、モノプロピルトリエトキシシランなどのモノアルキルトリアルコキシシラン、モノフェニルトリメトキシシラン、モノフェニルトリエトキシシランなどのモノフェニルトリアルコキシシラン等を挙げることができ、
(ii)n=2の場合、ジメチルジメトキシシラン、ジメチルジエトキシシラン、ジメチルジプロポキシシラン、ジエチルジメトキシシラン、ジエチルジエトキシシラン、ジエチルジプロポキシシラン、ジプロピルジメトキシシラン、ジプロピルジエトキシシラン、ジプロピルジプロポキシシランなどのジアルキルジアルコキシシラン、ジフェニルジメトキシシラン、ジフェニルジエトキシシランなどのジフェニルジアルコキシシラン等を挙げることができ、
(iii)n=3の場合、トリメチルメトキシシラン、トリメチルエトキシシラン、トリメチルプロポキシシラン、トリエチルメトキシシラン、トリエチルエトキシシラン、トリエチルプロポキシシラン、トリプロピルメトキシシラン、トリプロピルエトキシシランなどのトリアルキルアルコキシシラン、トリフェニルメトキシシラン、トリフェニルエトキシシランなどのトリフェニルアルコキシシラン等を挙げることができる。
本発明に用いられる保護元素を含む化合物とは、不純物拡散の拡散源となる元素と共有結合して価電子が8個となる保護元素を含む化合物である。拡散源としては、リン、ホウ素が一般に多く用いられる。
(界面活性剤)
本発明の膜形成組成物には、界面活性剤を配合することが好ましい。界面活性剤の存在により、基板に対する塗布性、平坦性、展開性を向上させることが可能となる。
本発明の膜形成組成物は、塗布性および膜厚均一性を向上させる目的で、溶剤を含むことが好ましい。この溶剤としては、従来より一般的に使用されている有機溶剤が使用できる。具体例としては、メチルアルコール、エチルアルコール、プロピルアルコール、ブチルアルコール、3−メトキシ−3−メチル−1−ブタノール、3−メトキシ−1−ブタノールのような一価アルコール;メチル−3−メトキシプロピオネート、エチル−3−エトキシプロピオネートのようなアルキルカルボン酸エステル;エチレングリコール、ジエチレングリコール、プロピレングリコールのような多価アルコール;エチレングリコールモノメチルエーテル、エチレングリコールモノエチルエーテル、エチレングリコールモノプロピルエーテル、エチレングリコールモノブチルエーテル、プロピレングリコールモノメチルエーテル、プロピレングリコールモノエチルエーテル、プロピレングリコールモノプロピルエーテル、プロピレングリコールモノブチルエーテル、エチレングリコールモノメチルエーテルアセテート、エチレングリコールモノエチルエーテルアセテート、プロピレングリコールモノメチルエーテルアセテート、プロピレングリコールモノエチルエーテルアセテートのような多価アルコール誘導体;酢酸、プロピオン酸のような脂肪酸;アセトン、メチルエチルケトン、2−ヘプタノンのようなケトンなどを挙げることができる。これらの有機溶剤は、単独で用いてもよいし2種以上組み合わせて用いてもよい。
また、本発明においては、本発明の効果を損なわない範囲で、その他の樹脂、添加剤等を配合することが可能である。その他の配合成分は、保護膜に付与したい機能等によって、適宜選択することが可能である。
本発明の保護膜は、塗布工程及び焼成工程からなる保護膜形成方法により形成される。以下、それぞれの工程を説明する。
塗布工程とは、基板に、本発明の膜形成組成物を塗布し、膜形成組成物の塗布層を得る工程である。この塗布方法としては、スプレー法、ロールコート法、回転塗布法等が挙げられる。本発明において、基板の材料はシリコンを用いることができる。
焼成工程とは、塗布工程により基板に設けられた膜形成組成物の塗布層を、焼成又は半焼成して、膜形成組成物の硬化膜を形成する工程である。この硬化膜が保護層となる。
[拡散層形成工程]
拡散層形成工程は、保護層が形成された基板に対し、不純物を含む不純物含有組成物を塗布し、ベークして拡散層を形成する工程である。このベーク温度としては、特に限定されるものではないが、150℃〜300℃程度である。
拡散工程は、基板に不純物を拡散させる工程である。この工程では、例えば不活性ガス雰囲気下にて、焼成することにより、拡散層から基板に不純物を拡散させる。上記不活性ガスとしては、例えば、窒素等を挙げることができる。また、焼成温度としては、700℃〜1000℃程度である。また拡散時間としては、10分〜60分程度である。
剥離工程とは、焼成工程により焼成又は半焼成して得られた膜形成組成物の硬化膜(保護層)を基板より剥離する工程である。また、前記拡散層は、別途剥離しても、この剥離工程において同時に剥離してもよい。ここでは、剥離液を用いて、保護層を剥離する工程を例にあげる。この剥離工程において、剥離液を保護層に接触させる方法としては、特に限定されるものでなく、例えば保護層を形成した基板を剥離液に一定時間浸漬した後、水洗して乾燥する浸漬法、保護層の表面に剥離液を滴下し、一定時間静置した後、水洗乾燥するパドル法、保護層表面に剥離液をスプレーした後に水洗乾燥するスプレー法等、目的に応じた種々の方法を挙げられる。
まず、塩化ガリウム(III)とエタノールとを混合し1質量%−エタノール溶液を調製した。別途、テトラエトキシシランをエタノール中HCl触媒下にて縮重合させたのち、SiO2濃度が11%となるようにエタノールで希釈して、ベース塗布液を調製した。なお、上記縮重合においては、加水分解率が50%となるように調整した。その後、1質量%−(ガリウム+エタノール)溶液と、ベース塗布液とをガリウム濃度が100ppmとなるように混合し、膜形成組成物を得た。
上記実施例1において、保護層を形成する際の焼成温度を600℃としたものを実施例2とし、700℃としたものを実施例3とした。また、実施例1において拡散層を形成しなかったものを参考例1とした。
上記実施例1において、ガリウムを10ppmの濃度となるように調整した膜形成用組成物を用い、保護層の形成する際の焼成温度を500℃、600℃、700℃を実施例5から7とし、実施例4において拡散層を形成しなかったものを参考例2とした。
実施例1〜6、参考例1、2において、塩化ガリウム(III)を硝酸アルミニウムに変更し、アルミニウム濃度をガリウム濃度と同様に調整したものを、それぞれ実施例7〜12、参考例3、4とした。
実施例1〜3、参考例1においてベース塗布液を用いて形成した保護層(保護元素を添加しない膜)を用いたものを比較例1から3とした。さらに、実施例1において保護層を形成せず拡散層のみを形成したものを比較例5とし、実施例1において保護層および拡散層を形成せず、ウエハのみのものを比較例6とした。
膜形成組成物としてのTiO2系膜形成組成物(Ti−5000T:東京応化工業(株)製)を、シリコンウエハ(4インチ/CZ−P<100>:信越化学工業(株)製)上に塗布した後、500℃および700℃で焼成し、保護層を形成したものを比較例7、8とした。また、比較例7、8と同様に保護層を形成した後、実施例1と同様にして、930℃でリンを拡散させたものを比較例9、10とした。
実施例1から12、各参考例および比較例1から6におけるシリコンウエハの抵抗値の測定を行い、保護膜の性能評価を行った。各実施例の製造条件、抵抗値を表1から表3に示す。
実施例1〜12の拡散後のシリコンウエハおよび比較例7〜10についてフッ酸による保護層の剥離試験を行った。試験は、フッ酸に一定時間、浸漬させた場合の剥離の程度の比較を行った。比較は、目視による色の変化により行った。実施例1〜12の拡散後のシリコンウエハでは、5%フッ酸に5分浸漬することにより保護層を剥離することができた。これに対し、比較例7、8では、5%フッ酸に20分浸漬しても保護層を剥離することはできなかったが、50%フッ酸に5分浸漬することにより剥離することができた。また、比較例9、10では、5%フッ酸に20分浸漬しても保護層を剥離することはできず、さらに50%フッ酸に5分浸漬することによっても保護層を剥離することはできなかった。以上より、Ti系の膜形成組成物では、剥離が困難であることが明らかであり、Si系の膜形成組成物では剥離が容易になることが確認できた。
Claims (6)
- シリコンウエハへの不純物拡散を行う際に、この不純物拡散を部分的に防止するための保護膜を構成する膜形成組成物であって、
シロキサン系高分子化合物と、
前記不純物拡散の拡散源となる元素と共有結合して価電子が8個となる保護元素を含む化合物とを含有し、
前記保護元素を含む化合物の前記膜形成組成物中の質量濃度が、5ppm以上2%以下であり、
前記保護元素が、ガリウムおよびアルミニウムの少なくとも1種である膜形成組成物。 - シリコンウエハへの不純物拡散を行う際に、この不純物拡散を部分的に防止するための保護膜を構成する膜形成組成物であって、
シロキサン系高分子化合物と、
前記不純物拡散の拡散源となる元素と共有結合して価電子が8個となる保護元素を含む化合物とを含有し、
前記保護元素を含む化合物の前記膜形成組成物中の質量濃度が、5ppm以上2%以下であり、
前記保護元素が、リン、タンタル、ニオブ、ヒ素、又は、アンチモンより選択される一種以上である膜形成組成物。 - 前記保護元素を含む化合物が、前記保護元素を含む塩又はアルコキシドである請求項1又は2記載の膜形成組成物。
- 請求項1から3いずれか記載の膜形成組成物をシリコンウエハ上に塗布し、400℃以上900℃以下で焼成してなる保護膜。
- 保護膜の膜厚が500Å以上である請求項4記載の保護膜。
- 請求項1から3いずれか記載の膜形成組成物をシリコンウエハの一方の面上に塗布し、焼成して保護膜を形成する工程と、
不純物元素を含む化合物を含有する不純物含有組成物を前記シリコンウエハの他方の面上に塗布し、焼成して拡散膜を形成する工程と、
前記保護膜及び前記拡散膜が形成されたシリコンウエハを焼成し、前記拡散膜から前記シリコンウエハへと前記不純物を拡散させる工程とを含む不純物拡散方法。
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JP2006009430A JP5283824B2 (ja) | 2006-01-18 | 2006-01-18 | 膜形成組成物 |
US12/160,176 US7914854B2 (en) | 2006-01-18 | 2006-12-19 | Film-forming composition |
CN200680049112XA CN101346799B (zh) | 2006-01-18 | 2006-12-19 | 膜形成组合物 |
PCT/JP2006/325261 WO2007083470A1 (ja) | 2006-01-18 | 2006-12-19 | 膜形成組成物 |
DE112006003669.6T DE112006003669B4 (de) | 2006-01-18 | 2006-12-19 | Filmbildende Zusammensetzung, Schutzfilm sowie Verfahren zur Diffusion einer Dotiersubstanz |
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JP2006009430A Active JP5283824B2 (ja) | 2006-01-18 | 2006-01-18 | 膜形成組成物 |
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US (1) | US7914854B2 (ja) |
JP (1) | JP5283824B2 (ja) |
CN (1) | CN101346799B (ja) |
DE (1) | DE112006003669B4 (ja) |
TW (1) | TW200733237A (ja) |
WO (1) | WO2007083470A1 (ja) |
Families Citing this family (20)
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US20050021123A1 (en) | 2001-04-30 | 2005-01-27 | Jurgen Dorn | Variable speed self-expanding stent delivery system and luer locking connector |
WO2007022395A1 (en) | 2005-08-17 | 2007-02-22 | C.R. Bard, Inc. | Variable speed stent delivery system |
US11026822B2 (en) | 2006-01-13 | 2021-06-08 | C. R. Bard, Inc. | Stent delivery system |
CA2936205C (en) | 2006-01-13 | 2018-08-21 | C.R. Bard, Inc. | Stent delivery system |
JP5026008B2 (ja) * | 2006-07-14 | 2012-09-12 | 東京応化工業株式会社 | 膜形成組成物 |
GB0615658D0 (en) | 2006-08-07 | 2006-09-13 | Angiomed Ag | Hand-held actuator device |
GB0713497D0 (en) | 2007-07-11 | 2007-08-22 | Angiomed Ag | Device for catheter sheath retraction |
JP5691269B2 (ja) * | 2010-07-07 | 2015-04-01 | 日立化成株式会社 | n型拡散層形成組成物、n型拡散層の製造方法、及び太陽電池セルの製造方法 |
JP5691268B2 (ja) * | 2010-07-07 | 2015-04-01 | 日立化成株式会社 | p型拡散層形成組成物、p型拡散層の製造方法、及び太陽電池セルの製造方法 |
GB201017834D0 (en) | 2010-10-21 | 2010-12-01 | Angiomed Ag | System to deliver a bodily implant |
JP6001268B2 (ja) * | 2011-01-31 | 2016-10-05 | 東京応化工業株式会社 | ケイ素含有膜形成組成物および不純物拡散層の形成方法 |
JP5339012B1 (ja) * | 2012-01-10 | 2013-11-13 | 日立化成株式会社 | 太陽電池用基板の製造方法および太陽電池素子の製造方法 |
JP5339013B1 (ja) * | 2012-01-10 | 2013-11-13 | 日立化成株式会社 | 太陽電池用基板の製造方法および太陽電池素子の製造方法 |
JP5339014B1 (ja) * | 2012-01-10 | 2013-11-13 | 日立化成株式会社 | バリア層形成用組成物、太陽電池用基板の製造方法及び太陽電池素子の製造方法 |
WO2014144134A1 (en) * | 2013-03-15 | 2014-09-18 | Avon Products, Inc | Long-wearing transfer resistant film-forming ingredient |
JP6115634B2 (ja) * | 2013-06-06 | 2017-04-19 | 信越化学工業株式会社 | p型選択エミッタ形成方法 |
CN105408986B (zh) | 2013-08-02 | 2018-05-22 | 东丽株式会社 | 掩模糊料组合物、使用其得到的半导体元件及半导体元件的制造方法 |
US9592186B2 (en) | 2014-09-30 | 2017-03-14 | Avon Products, Inc. | Topical compositions and methods for skin lightening |
CN109285769B (zh) * | 2017-07-20 | 2021-07-09 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
JP7428478B2 (ja) * | 2019-05-24 | 2024-02-06 | 東京応化工業株式会社 | 拡散剤組成物、及び半導体基板の製造方法 |
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US3514348A (en) * | 1967-05-10 | 1970-05-26 | Ncr Co | Method for making semiconductor devices |
US4929995A (en) * | 1988-02-16 | 1990-05-29 | Honeywell Inc. | Selective integrated circuit interconnection |
JPH02188914A (ja) * | 1989-01-17 | 1990-07-25 | Seiko Instr Inc | 半導体装置の製造方法 |
JPH0355828A (ja) * | 1989-07-25 | 1991-03-11 | Hitachi Chem Co Ltd | 半導体素子用不純物拡散液およびこれを用いた不純物拡散層の製造法 |
JP2647304B2 (ja) * | 1992-05-22 | 1997-08-27 | 東京応化工業株式会社 | ドーパント拡散被膜形成用塗布液 |
TW247332B (en) | 1994-11-21 | 1995-05-11 | Chorng-Tair Wu | Working process for frame continuous wall |
JP3519847B2 (ja) * | 1995-12-26 | 2004-04-19 | 東京応化工業株式会社 | ホウ素拡散用塗布液 |
DE19910816A1 (de) * | 1999-03-11 | 2000-10-05 | Merck Patent Gmbh | Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern |
JP2002124692A (ja) * | 2000-10-13 | 2002-04-26 | Hitachi Ltd | 太陽電池およびその製造方法 |
TW518660B (en) | 2001-09-13 | 2003-01-21 | Taiwan Semiconductor Mfg | Improved anti-reflection coating layer structure |
JP4025058B2 (ja) | 2001-11-21 | 2007-12-19 | シャープ株式会社 | 太陽電池セルの製造方法 |
US7122408B2 (en) * | 2003-06-16 | 2006-10-17 | Micron Technology, Inc. | Photodiode with ultra-shallow junction for high quantum efficiency CMOS image sensor and method of formation |
US7468485B1 (en) * | 2005-08-11 | 2008-12-23 | Sunpower Corporation | Back side contact solar cell with doped polysilicon regions |
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2006
- 2006-01-18 JP JP2006009430A patent/JP5283824B2/ja active Active
- 2006-12-19 DE DE112006003669.6T patent/DE112006003669B4/de not_active Expired - Fee Related
- 2006-12-19 US US12/160,176 patent/US7914854B2/en not_active Expired - Fee Related
- 2006-12-19 WO PCT/JP2006/325261 patent/WO2007083470A1/ja active Application Filing
- 2006-12-19 CN CN200680049112XA patent/CN101346799B/zh not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
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CN101346799B (zh) | 2010-10-13 |
US7914854B2 (en) | 2011-03-29 |
CN101346799A (zh) | 2009-01-14 |
WO2007083470A1 (ja) | 2007-07-26 |
DE112006003669B4 (de) | 2016-07-21 |
TWI341559B (ja) | 2011-05-01 |
US20090014845A1 (en) | 2009-01-15 |
TW200733237A (en) | 2007-09-01 |
JP2007194306A (ja) | 2007-08-02 |
DE112006003669T5 (de) | 2009-02-19 |
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