JP5274828B2 - Field emission lamp with cold cathode electron source - Google Patents

Field emission lamp with cold cathode electron source Download PDF

Info

Publication number
JP5274828B2
JP5274828B2 JP2007324905A JP2007324905A JP5274828B2 JP 5274828 B2 JP5274828 B2 JP 5274828B2 JP 2007324905 A JP2007324905 A JP 2007324905A JP 2007324905 A JP2007324905 A JP 2007324905A JP 5274828 B2 JP5274828 B2 JP 5274828B2
Authority
JP
Japan
Prior art keywords
electrode
electron source
field emission
cathode
cold cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007324905A
Other languages
Japanese (ja)
Other versions
JP2009146816A (en
Inventor
範行 中岡
博久 平木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pureron Japan Co Ltd
Original Assignee
Pureron Japan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pureron Japan Co Ltd filed Critical Pureron Japan Co Ltd
Priority to JP2007324905A priority Critical patent/JP5274828B2/en
Publication of JP2009146816A publication Critical patent/JP2009146816A/en
Application granted granted Critical
Publication of JP5274828B2 publication Critical patent/JP5274828B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Description

本発明は、冷陰極電子源を備えたフィールドエミッションランプに関する。 The present invention relates to a field emission lamp having a cold cathode electron source.

図５を参照して、内部真空１０の図示略のランプ管内に蛍光体１１付きアノード電極１２に平行に配置した基板１４上にカソード電極１６を配置すると共に、このカソード電極１６上に断面長方形状の絶縁層１８と断面三角形状の電子エミッタ（エミッタ電極）２０とを配置し、電子エミッタ２０とカソード電極１６とは直接接続で相互の電気的導通をとる一方で絶縁層１８上に断面長方形状のゲート電極２２を配置した構成のフィールドエミッションランプ２４が従来から提案されている（例えば特許文献１参照）。このようなフィールドエミッションランプ２４では、アノード電極１２とカソード電極１６との間に高電位を印加すると共にゲート電極２２の電位制御で電子エミッタ２０の頂点から電子放出を制御しつつ電界放射により電子を引き出して蛍光体１１に加速衝突させて蛍光体１１を励起発光させることができるようになっている。    Referring to FIG. 5, a cathode electrode 16 is disposed on a substrate 14 disposed in parallel with the anode electrode 12 with the phosphor 11 in a lamp tube (not shown) of the internal vacuum 10, and a rectangular cross section is formed on the cathode electrode 16. Insulating layer 18 and electron emitter (emitter electrode) 20 having a triangular cross section are arranged. Electron emitter 20 and cathode electrode 16 are directly connected to each other to be electrically connected to each other, while rectangular shape is formed on insulating layer 18. A field emission lamp 24 having a configuration in which the gate electrode 22 is arranged has been proposed (see, for example, Patent Document 1). In such a field emission lamp 24, a high potential is applied between the anode electrode 12 and the cathode electrode 16 and electrons are emitted by field emission while controlling the electron emission from the apex of the electron emitter 20 by controlling the potential of the gate electrode 22. The phosphor 11 can be excited to emit light by being pulled out and acceleratedly collided with the phosphor 11.

上記フィールドエミッションランプ２４では、ゲート電極２２とカソード電極１６との位置関係は、電子エミッタ２０からの電子引き出し特性に影響を与える。従ってこれら相互の絶縁距離は予め一定に設定できることが望ましい。   In the field emission lamp 24, the positional relationship between the gate electrode 22 and the cathode electrode 16 affects the electron extraction characteristics from the electron emitter 20. Therefore, it is desirable that the mutual insulation distance can be set to be constant in advance.

しかし、上記従来構造の冷陰極電子源２６ではゲート電極２２とカソード電極１６との絶縁距離関係を高精度に設定するには精密な製造プロセスを要求されるものであり、製造歩留まりが必ずしもよくない。また、１つの電子放出サイトには単一の電子エミッタ２０が連続使用されるようになっているので、早期に電子エミッタ２０の電子放出寿命が到来し、ひいてはフィールドエミッションランプ２４のランプ寿命特性が低い。
特開２００１−１８４０２０号公報 However, the cold cathode electron source 26 having the above-described conventional structure requires a precise manufacturing process to set the insulation distance relationship between the gate electrode 22 and the cathode electrode 16 with high accuracy, and the manufacturing yield is not necessarily good. . In addition, since a single electron emitter 20 is continuously used at one electron emission site, the electron emission life of the electron emitter 20 comes early, and consequently the lamp life characteristics of the field emission lamp 24 are improved. Low.
JP 2001-184020 A

本発明では、製造歩留まりに優れ、かつ、電子放出寿命特性に優れた冷陰極電子源を提供するものである。本発明ではランプ寿命が長いフィールドエミッションランプを提供するものである。   The present invention provides a cold cathode electron source having excellent manufacturing yield and excellent electron emission lifetime characteristics. The present invention provides a field emission lamp having a long lamp life.

本発明に係る冷陰極電子源を備えたフィールドエミッションランプは、冷陰極電子源と、この冷陰極電子源に対向配置される蛍光体付きアノード電極とを備えたフィールドエミッションランプにおいて、上記冷陰極電子源は、カソード電極とゲート電極とを交互に絶縁材を挟んで基板上に配置して一体化し、上記カソード電極とゲート電極とのうち少なくとも一方は上記交互に配置される並設方向で複数配置されるとともに、上記カソード電極とゲート電極とのうち少なくとも上記カソード電極の上記アノード電極と対向する側の端面に炭素膜を設けたことを特徴とするものである。 A field emission lamp comprising a cold cathode electron source according to the present invention is a field emission lamp comprising a cold cathode electron source and an anode electrode with a phosphor disposed opposite to the cold cathode electron source. The source is formed by alternately arranging the cathode electrode and the gate electrode on the substrate with the insulating material interposed therebetween, and at least one of the cathode electrode and the gate electrode is arranged in a plurality in the parallel arrangement direction. In addition, a carbon film is provided on an end face of the cathode electrode and the gate electrode on the side facing the anode electrode of at least the cathode electrode .

本発明では、冷陰極電子源の構成が複数の電極と複数の絶縁材が交互に配置されて一体化されているので、絶縁材の板厚調整で電極間の絶縁距離が一定化する。また、各電極に炭素膜を設けておくことにより、各電極を切り替えてカソード電極とすることができ、そのカソード電極とすることができ、そのカソード電極上の炭素膜を電子エミッタとして用いることにより、電子放出寿命が長い冷陰極電子源を得ることができる。このように、電子放出寿命が長い冷陰極電子源を用いるので、フィールドエミッションランプとしてランプ寿命が長い。 In the present invention, the structure of the cold cathode electron source is integrated by alternately arranging a plurality of electrodes and a plurality of insulating materials, so that the insulation distance between the electrodes is made constant by adjusting the plate thickness of the insulating material. In addition, by providing a carbon film on each electrode, each electrode can be switched to become a cathode electrode, which can be used as the cathode electrode, and by using the carbon film on the cathode electrode as an electron emitter. A cold cathode electron source having a long electron emission lifetime can be obtained. Thus, since the cold cathode electron source having a long electron emission lifetime is used, the lamp lifetime is long as a field emission lamp.

本発明において、好ましい態様の１つは、上記基板がフラットな形状であり、当該基板上にカソード電極とゲート電極とを交互に絶縁材を挟んで配置することである。 In the present invention, one preferred embodiment, the substrate is a flat shape, is to place across the insulating material alternately a cathode electrode and a gate electrode on the substrate.

本発明において、好ましい態様の１つは、上記基板が線状であり、当該基板の周方向にカソード電極とゲート電極とを交互に絶縁材を挟んで配置することである。 In the present invention, one preferred embodiment, the substrate is linear, is to place across the insulating material in the circumferential direction of the substrate alternately a cathode electrode and a gate electrode.

本発明によれば、製造歩留まりないしは電子放出寿命特性に優れた冷陰極電子源を用いたフィールドエミッションランプとなりランプ寿命が長いランプとなる。 According to the present invention, a field emission lamp using a cold cathode electron source excellent in manufacturing yield or electron emission lifetime characteristics is obtained , and the lamp has a long lamp lifetime.

以下、添付した図面を参照して、本発明の実施の形態に係る冷陰極電子源を備えるフィールドエミッションランプを説明する。なお、図１は参考例を示すものであり、図２、図３、図４は、それぞれ、本発明の実施の形態を示す。 Hereinafter, a field emission lamp including a cold cathode electron source according to an embodiment of the present invention will be described with reference to the accompanying drawings. FIG. 1 shows a reference example, and FIGS. 2, 3, and 4 each show an embodiment of the present invention.

図１（ａ）（ｂ）を参照して参考例の冷陰極電子源を備えたフィールドエミッションランプを説明する。図１（ａ）は冷陰極電子源の断面を示し、図１（ｂ）は図１（ａ）の円Ａで囲む部分を拡大して示す。 A field emission lamp equipped with a cold cathode electron source of a reference example will be described with reference to FIGS. FIG. 1A shows a cross section of the cold cathode electron source, and FIG. 1B shows an enlarged portion surrounded by a circle A in FIG.

実施の形態の冷陰極電子源２６は、基板１４上において、絶縁材２８の両側面に電極３２ａ，３２ｂを積層一体化して構成している。   The cold cathode electron source 26 according to the embodiment is configured by stacking and integrating electrodes 32 a and 32 b on both sides of an insulating material 28 on the substrate 14.

実施の形態の冷陰極電子源２６において、図１（ｂ）で拡大して示すように、一方の電極３２ａがゲート電極、他方の電極３２ｂがカソード電極となって、ゲート電極３２ａ表面には炭素膜は形成されていないが、カソード電極３２ｂには電子エミッタとして電子放出作用がある炭素膜３０ｂが形成されている。   In the cold cathode electron source 26 of the embodiment, as shown in an enlarged view in FIG. 1B, one electrode 32a serves as a gate electrode, the other electrode 32b serves as a cathode electrode, and carbon is formed on the surface of the gate electrode 32a. Although no film is formed, a carbon film 30b having an electron emission function as an electron emitter is formed on the cathode electrode 32b.

この炭素膜３０ｂは、カーボンナノチューブ、カーボンナノウォール、黒鉛、等の電界放射により電子放出することができる多数のｎｍサイズの鋭端を備えた炭素膜である。この構造では、カソード電極３２ｂ上の炭素膜３０ｂからは、電子ｅ−がゲート電極３２ａで引き出されて図１（ｂ）の矢印で示すように放出される。   The carbon film 30b is a carbon film having a number of nm-sized sharp ends capable of emitting electrons by electric field radiation such as carbon nanotubes, carbon nanowalls, and graphite. In this structure, from the carbon film 30b on the cathode electrode 32b, electrons e− are extracted by the gate electrode 32a and emitted as shown by the arrow in FIG.

なお、実施の形態ではカソード電極３２ｂの表面にのみ炭素膜３０ｂを形成することに限定するものではなく、図１（ｃ）で示すように、両電極３２ａ，３２ｂの電極表面に炭素膜３０ａ、３０ｂを形成してもよい。図１（ｃ）の構造では、電極３２ａ，３２ｂをカソード電極、ゲート電極として切り替えて用いる。すなわち、電極３０ａをカソード電極とし電極３０ｂをゲート電極とする場合では実線矢印で示すように電子ｅ−を放出させ、電極３０ａをゲート電極とし電極３０ｂをカソード電極とする場合では点線矢印で示すように電子ｅ−を放出させる。この切り替えは、ある周期で交互に切り替えて、使うこともでき、あるいは、片方の電極表面の炭素膜に電子エミッタとしての寿命が来るときに、切り替えを行っても良い。このように、双方の電極表面の炭素膜を電子放出に使用することができ、冷陰極電子源２６の寿命を向上させることができる。   In the embodiment, the carbon film 30b is not limited to be formed only on the surface of the cathode electrode 32b. As shown in FIG. 1C, the carbon film 30a is formed on the electrode surfaces of both the electrodes 32a and 32b. 30b may be formed. In the structure of FIG. 1C, the electrodes 32a and 32b are switched and used as a cathode electrode and a gate electrode. That is, when the electrode 30a is a cathode electrode and the electrode 30b is a gate electrode, the electron e− is emitted as shown by a solid arrow, and when the electrode 30a is a gate electrode and the electrode 30b is a cathode electrode, it is shown by a dotted arrow. To emit electrons e-. This switching can be used by alternately switching at a certain period, or may be performed when the carbon film on the surface of one of the electrodes has a lifetime as an electron emitter. Thus, the carbon films on both electrode surfaces can be used for electron emission, and the lifetime of the cold cathode electron source 26 can be improved.

図２（ａ）に本発明の実施の形態の冷陰極電子源を備えたフィールドエミッションランプの部分断面、図２（ｂ）にその冷陰極電子源の電子放出状態を模式的に示す。これらの図において図５と対応する部分には同一の符号を付している。図２（ａ）の円Ｂで囲む部分を拡大して示している。 FIGS. 2 (a) to implementation in the form of a cold-cathode electron source field emission lamp part cross-section with the present invention, showing the electron emitting state of the cold-cathode electron source schematically in FIG. 2 (b). In these drawings, portions corresponding to those in FIG. The part enclosed with the circle | round | yen B of Fig.2 (a) is expanded and shown.

図２（ａ）を参照して図示略の内部真空１０のフラットパネル内に共にフラット形状の蛍光体１１付きアノード電極１２と、基板１４と、が平行に対向配置されている。基板１４上には、アノード電極１２に対向して、図２（ａ）の紙面を垂直に貫通する方向に線状に延びる冷陰極電子源２６が配置されている。なお、冷陰極電子源２６は模式的に図示したものであり、その断面直径等の各部寸法等は特に限定しない。冷陰極電子源２６は説明の都合で基板１４上に単一配置の形態で示されているが、基板１４上に複数配置の形態であってもよいことは勿論である。   Referring to FIG. 2A, a flat anode electrode 12 with a phosphor 11 and a substrate 14 are arranged in parallel to face each other in a flat panel of an internal vacuum 10 (not shown). On the substrate 14, a cold cathode electron source 26 is disposed so as to face the anode electrode 12 and extend linearly in a direction perpendicularly penetrating the paper surface of FIG. The cold cathode electron source 26 is schematically illustrated, and the dimensions of each part such as the cross-sectional diameter are not particularly limited. Although the cold cathode electron source 26 is shown in a single arrangement on the substrate 14 for convenience of explanation, it is needless to say that a plurality of cold cathode electron sources 26 may be arranged on the substrate 14.

冷陰極電子源２６は、ゲート電極２２、絶縁材２８、カソード電極１６がアノード電極１２に対して交互に配置されている。換言すれば、ゲート電極２２とカソード電極１６は絶縁材２８の両側面に一体構造化されている。この一体構造は、図５で示すような従来とは異なって絶縁材２８の両側面に電極２２，１６を設けた構造になっている。絶縁材２８の図１上での左右方向幅は図解の都合で示すものであり、フィルム、膜、基板状、等でもよく、その材質は両電極２２，１６を電気的に絶縁できればよい。   In the cold cathode electron source 26, the gate electrode 22, the insulating material 28, and the cathode electrode 16 are alternately arranged with respect to the anode electrode 12. In other words, the gate electrode 22 and the cathode electrode 16 are integrally formed on both side surfaces of the insulating material 28. This integrated structure is different from the conventional structure as shown in FIG. 5 in that the electrodes 22 and 16 are provided on both side surfaces of the insulating material 28. The width of the insulating material 28 in the left-right direction on FIG. 1 is shown for convenience of illustration, and may be a film, a film, a substrate, or the like, and the material only needs to be able to electrically insulate both electrodes 22 and 16.

カソード電極１６に対してはアノード電極１２に対向する側の端面１６ａに電界電子放出機能を有する炭素膜３０が成膜されている。この場合、炭素膜３０はゲート電極２２に成膜されてもよい。また、炭素膜３０は図２では上記端面１６ａに成膜されたが、両電極２２，１６の側面に成膜されてもよいことは勿論である。   For the cathode electrode 16, a carbon film 30 having a field electron emission function is formed on the end face 16 a on the side facing the anode electrode 12. In this case, the carbon film 30 may be formed on the gate electrode 22. Further, although the carbon film 30 is formed on the end face 16 a in FIG. 2, it is needless to say that the carbon film 30 may be formed on the side surfaces of both the electrodes 22 and 16.

以上の構成の冷陰極電子源２６を備えたフィールドエミッションランプ３２においては、アノード電極１２とカソード電極１６との間に図示略の高電圧電源から高電圧（アノード・カソード間電圧）が印加され、また、ゲート電極２２に図示略の電圧電源から電子引出しに必要なゲート電圧が印加されたとき、図２（ｂ）で示すように、炭素膜３０は電子エミッタとして電界放射により電子放出するが、この電子放出に際しゲート電極２２で電子引き出しが行われると共にアノード電極１２に向けて電子ｅ−が放出され、該電子ｅ−が蛍光体１１に加速衝突して当該蛍光体１１が励起発光する。   In the field emission lamp 32 having the cold cathode electron source 26 having the above configuration, a high voltage (anode-cathode voltage) is applied between the anode electrode 12 and the cathode electrode 16 from a high voltage power supply (not shown), When a gate voltage necessary for extracting electrons is applied to the gate electrode 22 from a voltage power supply (not shown), as shown in FIG. 2B, the carbon film 30 emits electrons by field emission as an electron emitter. At the time of this electron emission, electrons are extracted at the gate electrode 22 and electrons e− are emitted toward the anode electrode 12. The electrons e− collide with the phosphor 11 at an accelerated speed, and the phosphor 11 emits light by excitation.

上記実施の形態の冷陰極電子源２６は、絶縁材２８の両側面にゲート、カソード両電極２２，１６を一体化して設け、少なくともカソード電極１６に炭素膜３０を設けたので、ゲート、カソード両電極２２，１６の絶縁距離や互いの相対高さの寸法関係等は絶縁材２８で一定化されるので、これらの製造プロセスにはそれらの寸法関係を高精度に維持する精密プロセスをそれほど要求されずに済み、製造歩留まりが向上する。   In the cold cathode electron source 26 of the above embodiment, the gate and cathode electrodes 22 and 16 are integrally provided on both side surfaces of the insulating material 28, and the carbon film 30 is provided on at least the cathode electrode 16, so both the gate and cathode are provided. Since the insulating distance of the electrodes 22 and 16 and the dimensional relationship between the relative heights of the electrodes 22 and 16 are fixed by the insulating material 28, these manufacturing processes are required to have a precision process for maintaining the dimensional relationship with high accuracy. The manufacturing yield is improved.

また、カソード電極１６に炭素膜３０を成膜するだけでなくその両側に位置するゲート電極２２にも炭素膜３０を設けた場合では、カソード電極１６上の炭素膜３０に電子エミッタとしての寿命が来るときは、カソード電極１６をゲート電極とし、ゲート電極２２をカソード電極とし、ゲート電極２２上の炭素膜３０を電子エミッタとして用いることができ、冷陰極電子源の電子放出寿命が向上する。   Further, when the carbon film 30 is provided not only on the cathode electrode 16 but also on the gate electrodes 22 located on both sides thereof, the carbon film 30 on the cathode electrode 16 has a life as an electron emitter. When coming, the cathode electrode 16 can be used as a gate electrode, the gate electrode 22 can be used as a cathode electrode, and the carbon film 30 on the gate electrode 22 can be used as an electron emitter, which improves the electron emission lifetime of the cold cathode electron source.

図３を参照して本発明の他の実施の形態にかかる冷陰極電子源を備えたフィールドエミッションランプを説明する。図３（ａ）の円Ｃで囲む部分を拡大して示している。この実施の形態の冷陰極電子源２６は、図３（ａ）で示すように基板１４上において、高さがｈ１の電極３４ａ、高さがｈ２（＞ｈ１）の電極３４ｂが絶縁材２８を介して並設一体化されている。各電極３４ａ，３４ｂそれぞれの端面には炭素膜３０ａ，３０ｂが成膜されている。 A field emission lamp including a cold cathode electron source according to another embodiment of the present invention will be described with reference to FIG. The part enclosed by the circle C of Fig.3 (a) is expanded and shown. In the cold cathode electron source 26 of this embodiment, as shown in FIG. 3A, an electrode 34a having a height h1 and an electrode 34b having a height h2 (> h1) on the substrate 14 provide the insulating material 28. Are integrated in parallel. Carbon films 30a and 30b are formed on the end faces of the electrodes 34a and 34b, respectively.

この実施の形態の冷陰極電子源２６を備えたフィールドエミッションランプ３２においては、図３（ｂ）で示すように、高さｈ２の電極３４ｂをゲート電極、高さｈ１の電極３４ａをカソード電極とすると、ゲート電極がカソード電極より高いので、オーバーゲートタイプの冷陰極電子源２６として、また、高さｈ１の電極３４ａをゲート電極とする場合、高さｈ２の電極３４ｂはカソード電極となり、ゲート電極がカソード電極より低いので、アンダーゲートタイプの冷陰極電子源２６として、用いることができる。いずれのタイプの冷陰極電子源２６にするかをユーザは選択することができるようになる。   In the field emission lamp 32 having the cold cathode electron source 26 of this embodiment, as shown in FIG. 3B, the electrode 34b having a height h2 is a gate electrode, and the electrode 34a having a height h1 is a cathode electrode. Then, since the gate electrode is higher than the cathode electrode, as the over-gate type cold cathode electron source 26, and when the electrode 34a having the height h1 is used as the gate electrode, the electrode 34b having the height h2 becomes the cathode electrode. Can be used as the under-gate type cold cathode electron source 26. The user can select which type of cold cathode electron source 26 is used.

図４を参照して本発明のさらに他の実施の形態にかかる冷陰極電子源を備えたフィールドエミッションランプを説明する。図４（ｂ）の円Ｄで囲む部分を拡大して示している。   A field emission lamp including a cold cathode electron source according to still another embodiment of the present invention will be described with reference to FIG. The part enclosed with the circle | round | yen D of FIG.4 (b) is expanded and shown.

図４（ａ）で示すフィールドエミッションランプ３２はフラットパネルタイプであり、その冷陰極電子源２６は平坦なアノード電極１２に対して電極３６ａと、絶縁材２８と，電極３６ｂとをこの順序で並設したフラットな構成になっている。例えば電極３６ａをゲート電極、電極３６ｂをカソード電極とし、カソード電極３６ｂ表面にのみ図示略の炭素膜を形成したり、あるいはゲート電極３６ａ、カソード電極３６ｂの両表面共に図示略の炭素膜を形成することができる。   The field emission lamp 32 shown in FIG. 4A is a flat panel type, and the cold cathode electron source 26 has an electrode 36a, an insulating material 28, and an electrode 36b arranged in this order with respect to the flat anode electrode 12. It has a flat configuration. For example, the electrode 36a is a gate electrode and the electrode 36b is a cathode electrode, and a carbon film (not shown) is formed only on the surface of the cathode electrode 36b, or a carbon film (not shown) is formed on both surfaces of the gate electrode 36a and the cathode electrode 36b. be able to.

図４（ｂ）で示すフィールドエミッションランプ３２はランプ管形状であり、その冷陰極電子源２６は、この断面円形の蛍光体１１付きのアノード電極１２に対して断面円形になっていて、紙面を垂直方向線状に延びる断面円形の基板１４上に円周方向に電極３８ａと、絶縁材２８と、電極３８ｂとをこの順序で設けると共に電極３８ａをゲート電極とし、電極３８ｂをカソード電極とし、電極３８ｂのアノード電極１２に対向する側の端面に炭素膜３０を設けた構成になっている。この場合、両電極３８ａ，３８ｂに共に炭素膜を設けてもよい。また、基板３６は断面円形に限定されず断面多角形であってもよい。電極３８ａ，３８ｂと絶縁材２８は図４（ｂ）の紙面を垂直に貫通する方向に線状に延びた形状になっている。なお、ゲート電極となる電極３８ａやカソード電極となる電極３８ｂに対する電圧の印加の説明は略する。   The field emission lamp 32 shown in FIG. 4B has a lamp tube shape, and its cold cathode electron source 26 has a circular cross section with respect to the anode electrode 12 with the fluorescent substance 11 having a circular cross section. An electrode 38a, an insulating material 28, and an electrode 38b are provided in this order on a substrate 14 having a circular cross section extending in a vertical line shape, and the electrode 38a is a gate electrode, the electrode 38b is a cathode electrode, The carbon film 30 is provided on the end surface on the side facing the anode electrode 12 of 38b. In this case, both electrodes 38a and 38b may be provided with a carbon film. The substrate 36 is not limited to a circular cross section, and may be a polygonal cross section. The electrodes 38a, 38b and the insulating material 28 have a shape extending linearly in a direction perpendicularly penetrating the paper surface of FIG. Note that description of voltage application to the electrode 38a serving as the gate electrode and the electrode 38b serving as the cathode electrode is omitted.

図１（ａ）は参考例の実施形態に係る冷陰極電子源を備えたフィールドエミッションランプの部分断面を示す図、図１（ｂ）は図１（ａ）の冷陰極電子源においてカソード電極表面にのみ炭素膜が形成されている場合の電子放出状態を示す図、図、図１（ｃ）は図１（ａ）の冷陰極電子源においてゲート電極とカソード電極両表面に炭素膜が形成されている場合の電子放出状態を示す図である。1A is a diagram showing a partial cross section of a field emission lamp provided with a cold cathode electron source according to an embodiment of a reference example , and FIG. 1B is a surface of a cathode electrode in the cold cathode electron source of FIG. FIG. 1 (c) shows a state of electron emission when a carbon film is formed only on the surface of the cold cathode electron source of FIG. 1 (a). Carbon films are formed on both surfaces of the gate electrode and the cathode electrode. It is a figure which shows the electron emission state in the case of being. 図２（ａ）は本発明の実施形態に係る冷陰極電子源を備えたフィールドエミッションランプの部分断面を示す図、図２（ｂ）は図２（ａ）の冷陰極電子源の電子放出状態を示す図である。2A is a diagram showing a partial cross section of a field emission lamp provided with a cold cathode electron source according to an embodiment of the present invention, and FIG. 2B is an electron emission state of the cold cathode electron source of FIG. FIG. 図３（ａ）は本発明のさらに他の実施形態に係る冷陰極電子源を備えたフィールドエミッションランプの部分断面を示す図、図３（ｂ）は各電極がゲート電極となった場合のオーバーゲートタイプとアンダーゲートタイプとを示す図である。FIG. 3A is a diagram showing a partial cross section of a field emission lamp having a cold cathode electron source according to still another embodiment of the present invention, and FIG. 3B is an overshoot when each electrode is a gate electrode. It is a figure which shows a gate type and an under gate type. 図４（ａ）はアノード電極がフラットな場合の冷陰極電子源の断面、図４（ｂ）はアノード電極が断面円形の場合の冷陰極電子源の断面を示す図である。4A is a cross-sectional view of the cold cathode electron source when the anode electrode is flat, and FIG. 4B is a view showing a cross-section of the cold cathode electron source when the anode electrode is circular in cross section. 従来の冷陰極電子源を備えたフィールドエミッションランプの部分断面を示す図である。It is a figure which shows the partial cross section of the field emission lamp provided with the conventional cold cathode electron source.

符号の説明Explanation of symbols

１０ 真空
１１ 蛍光体
１２ アノード電極
１４ 基板
１６ カソード電極
２２ ゲート電極
２８ 絶縁材
３０ 炭素膜
３０ａ，３０ｂ 炭素膜
３２ａ，３２ｂ 電極
３４ａ，３４ｂ 電極
３６ａ，３６ｂ 電極
３８ａ，３８ｂ 電極 DESCRIPTION OF SYMBOLS 10 Vacuum 11 Phosphor 12 Anode electrode 14 Substrate 16 Cathode electrode 22 Gate electrode 28 Insulating material 30 Carbon film 30a, 30b Carbon film 32a, 32b Electrode 34a, 34b Electrode 36a, 36b Electrode 38a, 38b Electrode

Claims (3)

冷陰極電子源と、この冷陰極電子源に対向配置される蛍光体付きアノード電極とを備えたフィールドエミッションランプにおいて、上記冷陰極電子源は、カソード電極とゲート電極とを交互に絶縁材を挟んで基板上に配置して一体化し、上記カソード電極とゲート電極とのうち少なくとも一方は上記交互に配置される並設方向で複数配置されるとともに、上記カソード電極とゲート電極とのうち少なくとも上記カソード電極の上記アノード電極と対向する側の端面に炭素膜を設けた、フィールドエミッションランプ。 In a field emission lamp comprising a cold cathode electron source and an anode electrode with a phosphor disposed opposite to the cold cathode electron source, the cold cathode electron source has an insulating material alternately sandwiched between the cathode electrode and the gate electrode. And at least one of the cathode electrode and the gate electrode is arranged in the alternately arranged direction, and at least the cathode of the cathode electrode and the gate electrode. A field emission lamp in which a carbon film is provided on an end face of the electrode facing the anode electrode . 請求項１に記載のフィールドエミッションランプにおいて、上記基板がフラットな形状であり、当該基板上にカソード電極とゲート電極とを交互に絶縁材を挟んで配置した、フィールドエミッションランプ。 In field emission lamp according to claim 1, said substrate is a flat shape, alternately a cathode electrode and a gate electrode on the substrate and arranged across the insulating material, full I over field emission lamp. 請求項１に記載のフィールドエミッションランプにおいて、上記基板が線状であり、当該基板の周方向にカソード電極とゲート電極とを交互に絶縁材を挟んで配置した、フィールドエミッションランプ。 In field emission lamp according to claim 1, said substrate is a linear, alternating with the cathode electrode and the gate electrode in the circumferential direction of the substrate was placed across the insulation, full I over field emission lamp.
JP2007324905A 2007-12-17 2007-12-17 Field emission lamp with cold cathode electron source Expired - Fee Related JP5274828B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007324905A JP5274828B2 (en) 2007-12-17 2007-12-17 Field emission lamp with cold cathode electron source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007324905A JP5274828B2 (en) 2007-12-17 2007-12-17 Field emission lamp with cold cathode electron source

Publications (2)

Publication Number Publication Date
JP2009146816A JP2009146816A (en) 2009-07-02
JP5274828B2 true JP5274828B2 (en) 2013-08-28

Family

ID=40917174

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007324905A Expired - Fee Related JP5274828B2 (en) 2007-12-17 2007-12-17 Field emission lamp with cold cathode electron source

Country Status (1)

Country Link
JP (1) JP5274828B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010282956A (en) * 2009-05-01 2010-12-16 Kochi Fel Kk Field emission type light source
JP2012084475A (en) * 2010-10-14 2012-04-26 Kochi Fel Kk Field emission type light source

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5417551B2 (en) * 1973-11-07 1979-06-30
JP2000215786A (en) * 1999-01-20 2000-08-04 Matsushita Electric Ind Co Ltd Electron emission element and its manufacture
JP3420729B2 (en) * 1999-12-24 2003-06-30 株式会社東芝 Field emission display
JP2001216885A (en) * 2000-02-03 2001-08-10 Ricoh Co Ltd Field emission-type electron-emitting element, field emission-type electron-emitting element array, method of manufacturing them, and display device
JP3634781B2 (en) * 2000-09-22 2005-03-30 キヤノン株式会社 Electron emission device, electron source, image forming device, and television broadcast display device
JP2003051244A (en) * 2001-08-07 2003-02-21 Canon Inc Electron discharge element, electron source and imaging device
US7511415B2 (en) * 2004-08-26 2009-03-31 Dialight Japan Co., Ltd. Backlight for liquid crystal display device

Also Published As

Publication number Publication date
JP2009146816A (en) 2009-07-02

Similar Documents

Publication Publication Date Title
TW200301499A (en) Flat-panel display and flat-panel display cathode manufacturing method
JP2007184249A (en) Electron emitting element, backlight unit equipped with it, flat panel display apparatus equipped with it, and driving method of electron emitting element
US8938049B2 (en) Mesh electrode adhesion structure, electron emission device and electronic apparatus including the electron emission device
JP5274828B2 (en) Field emission lamp with cold cathode electron source
US7714493B2 (en) Field emission device and field emission display employing the same
CN117174552A (en) Cold cathode electron gun with electron beam shape adjustable coplanar quadrupole focusing structure
JP2004022536A (en) Flat display device with mesh-like grid
US20090134766A1 (en) Electron emission source, electron emission device, electron emission type backlight unit and electron emission display device
JP4458374B2 (en) Vacuum container and electron emission display device including the vacuum container
JP2007123274A (en) Spacer and electron emission display equipped with spacer
KR20020037171A (en) Field emission display device
JP4418813B2 (en) Electron emission display device
KR20070046660A (en) Vacuum envelope and electron emission display device using thereof
JP3660669B2 (en) Method for manufacturing flat display
KR20070019836A (en) Electron emission device
JP2008305769A (en) Cold cathode electron source
JP2007227348A (en) Electron emission device, electron emission display device using electron emission device
KR20060113187A (en) Electron emission device
JP2006126260A (en) Image display device
KR20070014680A (en) Electron emission device
US20070090747A1 (en) Vacuum envelope, method of manufacturing the vacuum envelope, and electron emission display having the vacuum envelope
KR20010075971A (en) Field emission display device
KR20070047460A (en) Electron emission device and electron emission display device using the same
KR20070083076A (en) Electron emission display device
KR20060095333A (en) Electron emission device

Legal Events

Date Code Title Description
A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20100512

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20100514

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20100628

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20101126

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20101126

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20101126

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120209

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120522

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120723

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120809

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121009

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20121106

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121217

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130507

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130515

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 5274828

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees