JP5271104B2 - リニアイメージセンサ - Google Patents
リニアイメージセンサ Download PDFInfo
- Publication number
- JP5271104B2 JP5271104B2 JP2009031224A JP2009031224A JP5271104B2 JP 5271104 B2 JP5271104 B2 JP 5271104B2 JP 2009031224 A JP2009031224 A JP 2009031224A JP 2009031224 A JP2009031224 A JP 2009031224A JP 5271104 B2 JP5271104 B2 JP 5271104B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor region
- concentration semiconductor
- type
- light
- light receiving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 200
- 239000012535 impurity Substances 0.000 claims abstract description 8
- 238000000605 extraction Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 23
- 230000035945 sensitivity Effects 0.000 description 11
- 238000001514 detection method Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 239000008186 active pharmaceutical agent Substances 0.000 description 6
- 206010047571 Visual impairment Diseases 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14607—Geometry of the photosensitive area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
[第1の実施形態]
[第2の実施形態]
[第3の実施形態]
[第4の実施形態]
Claims (5)
- 長尺形状の埋め込み型フォトダイオードが複数配列されたリニアイメージセンサにおいて、
前記埋め込み型フォトダイオード各々は、
第1導電型の第1半導体領域と、
前記第1半導体領域上に形成され、第2導電型の不純物濃度が低く、長尺形状である第2半導体領域と、
前記第2半導体領域の表面を覆うように、前記第2半導体領域上に形成された第1導電型の第3半導体領域と、
前記第2半導体領域から電荷を取り出すための第2導電型の第4半導体領域と、
を備え、
前記第4半導体領域は、前記第2半導体領域上において、長尺方向に複数離間して配置されている、
リニアイメージセンサ。 - 前記第4半導体領域は、前記第2半導体領域の前記長尺方向に延びる中心軸に沿って複数配置されている、
請求項1に記載のリニアイメージセンサ。 - 前記第4半導体領域は、前記第2半導体領域の前記長尺方向に延びる長辺に沿って複数配置されている、
請求項1に記載のリニアイメージセンサ。 - 前記第4半導体領域は、前記第2半導体領域の前記長尺方向に延びる両長辺に沿って、千鳥状に交互に複数配置されている、
請求項1に記載のリニアイメージセンサ。 - 前記第4半導体領域を被覆する遮光膜であって、配列方向に延びる当該遮光膜を備える、
請求項1〜4の何れか1項に記載のリニアイメージセンサ。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009031224A JP5271104B2 (ja) | 2009-02-13 | 2009-02-13 | リニアイメージセンサ |
KR1020117010055A KR101647525B1 (ko) | 2009-02-13 | 2010-02-08 | 리니어 이미지 센서 |
CN201080007754.XA CN102318066B (zh) | 2009-02-13 | 2010-02-08 | 线性图像传感器 |
EP10741205A EP2398052A4 (en) | 2009-02-13 | 2010-02-08 | LINEAR BLIND SENSOR |
PCT/JP2010/051802 WO2010092928A1 (ja) | 2009-02-13 | 2010-02-08 | リニアイメージセンサ |
US13/148,514 US8907386B2 (en) | 2009-02-13 | 2010-02-08 | Linear image sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009031224A JP5271104B2 (ja) | 2009-02-13 | 2009-02-13 | リニアイメージセンサ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010186935A JP2010186935A (ja) | 2010-08-26 |
JP5271104B2 true JP5271104B2 (ja) | 2013-08-21 |
Family
ID=42561770
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009031224A Active JP5271104B2 (ja) | 2009-02-13 | 2009-02-13 | リニアイメージセンサ |
Country Status (6)
Country | Link |
---|---|
US (1) | US8907386B2 (ja) |
EP (1) | EP2398052A4 (ja) |
JP (1) | JP5271104B2 (ja) |
KR (1) | KR101647525B1 (ja) |
CN (1) | CN102318066B (ja) |
WO (1) | WO2010092928A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5091886B2 (ja) * | 2009-02-13 | 2012-12-05 | 浜松ホトニクス株式会社 | イメージセンサ |
JP5271104B2 (ja) | 2009-02-13 | 2013-08-21 | 浜松ホトニクス株式会社 | リニアイメージセンサ |
KR101312083B1 (ko) * | 2010-02-05 | 2013-09-26 | 고쿠리츠 다이가꾸 호우진 시즈오까 다이가꾸 | 광정보 취득 소자, 광정보 취득 소자 어레이 및 하이브리드형 고체 촬상 장치 |
JP5659625B2 (ja) | 2010-08-24 | 2015-01-28 | 株式会社デンソー | ソレノイド装置 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH061825B2 (ja) | 1984-07-31 | 1994-01-05 | 日本電信電話株式会社 | 半導体リニアイメ−ジセンサ− |
JPH043473A (ja) * | 1990-04-20 | 1992-01-08 | Canon Inc | 光電変換装置 |
JP3413078B2 (ja) | 1997-10-06 | 2003-06-03 | キヤノン株式会社 | 光電変換装置と密着型イメージセンサ |
US6198118B1 (en) * | 1998-03-09 | 2001-03-06 | Integration Associates, Inc. | Distributed photodiode structure |
JP3410016B2 (ja) | 1998-03-31 | 2003-05-26 | 株式会社東芝 | 増幅型固体撮像装置 |
KR100291179B1 (ko) * | 1998-06-29 | 2001-07-12 | 박종섭 | 자기정렬된실리사이드층을갖는씨모스이미지센서및그제조방법 |
JP4258875B2 (ja) | 1999-02-15 | 2009-04-30 | 株式会社ニコン | 光電変換素子及び光電変換装置 |
JP3554244B2 (ja) | 1999-02-25 | 2004-08-18 | キヤノン株式会社 | 光電変換装置及びそれを用いたイメージセンサ並びに画像入力システム |
JP4165785B2 (ja) * | 1999-05-11 | 2008-10-15 | 横河電機株式会社 | フォトダイオードアレイ |
US6597025B2 (en) * | 2001-03-15 | 2003-07-22 | Koninklijke Philips Electronics N.V. | Light sensitive semiconductor component |
JP4109858B2 (ja) | 2001-11-13 | 2008-07-02 | 株式会社東芝 | 固体撮像装置 |
TW516226B (en) * | 2001-12-07 | 2003-01-01 | Twinhan Technology Co Ltd | CMOS image sensor structure with increased fill factor |
JP4004484B2 (ja) | 2004-03-31 | 2007-11-07 | シャープ株式会社 | 固体撮像素子の製造方法 |
JP2006041189A (ja) | 2004-07-27 | 2006-02-09 | Hamamatsu Photonics Kk | 固体撮像素子 |
CN100394609C (zh) | 2004-09-07 | 2008-06-11 | 三洋电机株式会社 | 固体摄像装置 |
JP4335104B2 (ja) * | 2004-09-09 | 2009-09-30 | 浜松ホトニクス株式会社 | ホトダイオードアレイおよび分光器 |
JP2006093442A (ja) * | 2004-09-24 | 2006-04-06 | Hamamatsu Photonics Kk | ホトダイオード、ホトダイオードアレイ、分光器およびホトダイオードの製造方法 |
JP4234116B2 (ja) | 2005-06-27 | 2009-03-04 | Nttエレクトロニクス株式会社 | アバランシ・フォトダイオード |
JP4956944B2 (ja) | 2005-09-12 | 2012-06-20 | 三菱電機株式会社 | アバランシェフォトダイオード |
EP1944571B1 (en) | 2005-11-14 | 2013-07-31 | Panasonic Corporation | Space information detecting apparatus and photoelectric detector preferable to the same |
KR100660336B1 (ko) | 2005-12-28 | 2006-12-22 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 |
US7675097B2 (en) | 2006-12-01 | 2010-03-09 | International Business Machines Corporation | Silicide strapping in imager transfer gate device |
US8264577B2 (en) | 2007-03-30 | 2012-09-11 | Panasonic Corporation | Image pickup device, spatial information detecting apparatus using the same device and method for taking out received-light output from the same device |
JP5271104B2 (ja) | 2009-02-13 | 2013-08-21 | 浜松ホトニクス株式会社 | リニアイメージセンサ |
JP5091886B2 (ja) * | 2009-02-13 | 2012-12-05 | 浜松ホトニクス株式会社 | イメージセンサ |
-
2009
- 2009-02-13 JP JP2009031224A patent/JP5271104B2/ja active Active
-
2010
- 2010-02-08 CN CN201080007754.XA patent/CN102318066B/zh not_active Expired - Fee Related
- 2010-02-08 EP EP10741205A patent/EP2398052A4/en not_active Ceased
- 2010-02-08 KR KR1020117010055A patent/KR101647525B1/ko active IP Right Grant
- 2010-02-08 WO PCT/JP2010/051802 patent/WO2010092928A1/ja active Application Filing
- 2010-02-08 US US13/148,514 patent/US8907386B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR101647525B1 (ko) | 2016-08-10 |
CN102318066B (zh) | 2014-07-16 |
CN102318066A (zh) | 2012-01-11 |
US20120018834A1 (en) | 2012-01-26 |
KR20110118122A (ko) | 2011-10-28 |
JP2010186935A (ja) | 2010-08-26 |
WO2010092928A1 (ja) | 2010-08-19 |
EP2398052A4 (en) | 2012-09-26 |
US8907386B2 (en) | 2014-12-09 |
EP2398052A1 (en) | 2011-12-21 |
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