JP5266235B2 - 電気装置において電気的接続を設ける方法 - Google Patents
電気装置において電気的接続を設ける方法 Download PDFInfo
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- JP5266235B2 JP5266235B2 JP2009533505A JP2009533505A JP5266235B2 JP 5266235 B2 JP5266235 B2 JP 5266235B2 JP 2009533505 A JP2009533505 A JP 2009533505A JP 2009533505 A JP2009533505 A JP 2009533505A JP 5266235 B2 JP5266235 B2 JP 5266235B2
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- solder
- low melting
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- melting point
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- H—ELECTRICITY
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
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- H05K3/3485—Applying solder paste, slurry or powder
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- B23K35/262—Sn as the principal constituent
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- B23K35/264—Bi as the principal constituent
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
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- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
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- H05K3/3463—Solder compositions in relation to features of the printed circuit board or the mounting process
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Description
ここに開示される一部の実施形態は、電気装置に見られるような配線に使用するための材料に向けられている。特に、ここに開示される一部の実施形態は、半田と、印刷回路基板、光起電力セルおよび太陽電池パネルなどの電気装置のアセンブリにおける半田の使用方法とに向けられている。
配線は典型的に、2つ以上の導体の間に電気的結合を設けるのに使用される。しかし、電気装置において電気的接続を設けるのに使用される材料および方法には著しい欠点がある。
(0−5)/Cu(0−5)、SACX0307合金、Sn(96.5)/Ag(3.5)、Sn(90−95)/Ag(0−5)、Sn(99)/Cu(1)、Sn(95−100)/Cu(0−5)、Sn(100)、Sn(63)/Pb(37)、Sn(20−80)/Pb(0−20)、Sn(62)/Pb(36)/Ag(2)、Sn(50−70)/Pb(30−50)/Ag(0−5)、Sn(60)/Pb(38)/Cu(2)およびSn(50−70)/Pb(30−50)/Cu(0−5)からなるグループから選択され得る。一部の実施形態では、二段半田は、二段半田の熱膨張係数を減少させるのに有効な量のゼロCTE材料をさらに含み得る。いくつかの例では、低融点半田構成要素は、ベース半田構成要素上にコーティングされ得る。他の例では、二段半田は、ワイヤ、リボン、金属被覆されたリボン、不連続な形状またはプリフォームの形態であり得る。
添付の図面を参照して、一部の例示的な例をより詳細に以下に記載する。
ここに記載される一部の例示的な実施形態は、電気装置のアセンブリの特性を向上させ
る半田およびそれらを用いたプリフォームに向けられている。半田のいくつかの実施形態は電気装置を組立てるのに用いられ、電気装置における応力、歪みまたは亀裂の可能性を低減し得る。半田の他の実施形態は、電気装置のアセンブリに使用される工程数を減少させ得る。これらおよび他の利点をより詳細に以下に述べる。
部の例では、二段半田は、ワイヤ、リボン、金属被覆されたリボン、またはたとえば円盤、長方形、座金、球体もしくは他の適切な形状などの不連続な形態であり得る。追加的な厚さおよび形状は、本開示を利用すれば、当業者によって容易に選択されるであろう。
得る。一部の例では、プリフォームは、約0.01平方インチ、直径0.01インチ、外径0.03インチであるかまたは他の適切な寸法を有し、半田体積精度および半田の配置を確保する。半田プリフォームが球体形状を取る実施形態では、当該球体は、直径がたとえば約0.003インチ以上であり得る。半田プリフォームの実施形態は、限定はしないが、制御された半田体積、組立時間の短縮、自動化された配置などを含む顕著な利点をもたらす。
び/または太陽電池を作製するのに使用され得る。特に、ここに開示される半田は、望ましくは太陽電池を接続するのに使用され得る。たとえば、第1のPVセルを第2のPVセルにまたはPVセルのアレイにおける端子に電気的に接続するために太陽電池配線が使用される。このような配線を用いて、太陽電池アレイのPVセルを平行もしくは直列構成に、またはその両方で接続し得る。また、PVセル配線および電子収量収集バスが、昇温処理でシリコンに接合され得る。一部の例では、太陽電池構造は、限定はしないがシリコン、CIGS(銅、インジウム、ガリウムおよびセレニウムの複合物(Cu(In,Ga)Se2))、銀フリット、アルミニウムフリット、銅バスバーおよび/またはスズ系半田を含む多数の材料で構成され得る。シリコンについての約2ppm/℃という低い値から典型的な半田についての約28ppm/℃という高い値まで、アセンブリには大幅な熱膨張係数(CTE)不整合が存在する。CTE不整合は、昇温処理によるシステム応力を招き、太陽電池の動作温度が−40℃から130℃を上回る温度の間で循環し得る場合の使用においても引起される。これらの熱応力は、突発的な微小亀裂によって太陽電池の製造歩留まりおよび動作寿命に悪影響を及ぼす。微小亀裂を除去するために太陽電池業界によって取られている手法は、応力への対処により即した材料、たとえばアニーリングされた銅の使用と、低CTEバス材料たとえばインバール(Invar)(商標)材料の使用とを含む。これらの特定の設計解決策は、ウェハの亀裂または異種CTE構成要素間の界面における亀裂を回避するのに有効ではなかった。
第2の層に対する電気的結合を有し、電気的結合は、二段半田から形成された半田接合部を有する。ここに記載される二段半田のいずれかを用いて、半田付け接合部を設け得る。また、選択された量のゼロCTE材料と混合された二段半田も使用し得る。
くつかの例では、半田は、所望の物理的または電気的特性をもたらすために1つ以上の充填剤もしくは材料を含み得る。一部の例では、ここに記載される電気装置の作製に半田が使用され得る。いくつかの例では、電気装置は印刷回路基板、PVセルであり得る、または太陽電池の作製に使用され得る。
半田合金は、スズ、銀およびモリブデンを適切な量で組合せることによって生成され得る。一実施形態では、スズ/銀半田(96.5Sn/3.5Ag)が30重量%のモリブデンと組合され、熱膨張係数が約13ppm/℃である半田合金が得られる。
半田合金は、適切な量のインジウムおよびモリブデンを組合せることによって生成され得る。一実施形態では、インジウム半田が28重量%のモリブデンと組合され、熱膨張係数が約9ppm/℃である半田合金が得られる。
半田合金は、適切な量のスズ、銀およびインバール材料を組合せることによって生成され得る。一実施形態では、スズ/銀半田(96.5Sn/3.5Ag)が31重量%のインバール材料と組合され、熱膨張係数が約6.9ppm/℃である半田合金が得られる。
半田合金は、適切な半田を1つ以上の他の金属または1つ以上の他の金属を含む材料と組合せることによって生成され得る。このような半田合金の熱膨張係数は、半田合金を1つ以上のゼロCTE充填剤、たとえばベータユークリプタイトと組合せることによって減少させ得る。
二層の半田材料からなる半田プリフォームをヒートシンク上に配置し、低融点半田合金がヒートシンクとの半田接合部を形成する温度まで加熱することによって、ヒートシンクに付着させることができる。次の処理ステップにおいて、当該構成要素がプリフォームの上に配置され、完成したアセンブリ装置がたとえばレーザで加熱され、半田接続を形成する。
太陽電池の全アレイ(たとえば6×10セル)を含む太陽電池アセンブリは、有機支持パネルと、銅およびエポキシ(回路基板業界に共通する材料)からなる可撓性回路基板と、EVA(エチルビニルアセテート)と、シリコン太陽電池と、EVAと、ガラスのカバ
ーパネルとを含む多層構造からなる。この構造は、上記のすべての層を150℃および低圧下において、セルと窓とにEVAを押圧し、積層体における空気を排気しながら材料を加熱することで積層することによって作成される。これにより、2つのEVA層が軟化して広がり、可撓性回路基板および太陽電池に対して半気密封止を形成する。また、太陽電池の裏側から回路基板に電気的接続が作成される。当初の接続は、約150℃で軟化し溶融する二段半田プリフォームを用いて作成される。プリフォームは、回路基板上に位置する電気的接点パッド上に配置され、以下の機能のうち1つ以上を実行する。すなわち、積層温度で軟化して脆い太陽電池が破損するのを回避し、太陽電池と回路基板との間に電気的接点をもたらし、電気的接点上にEVAが広がることを軽減または阻止する。
Claims (17)
- 電気装置において2つ以上の電気部品の間に電気的接続を設ける方法であって、前記方法は、
2つ以上の電気部品のある部分の上または間に二段半田を配置するステップを含み、二段半田は、ベース半田構成要素上に配置された低融点半田構成要素を有し、さらに、
低融点成分およびベース半田構成要素から半田合金または金属間化合物を形成するのに有効な温度で二段半田の低融点半田構成要素を溶融させるステップと、
半田合金を半田付けして、2つ以上の電気部品の間に電気的接続を設けるステップとを含み、
半田付けする前記ステップは、半田付けされる接合部上に、ゼロCTE材料と混合された二段半田を配置するステップを含み、前記二段半田は、半田と半田付けされる接合部における材料との熱膨張係数の不整合を減少させるのに有効な量のゼロCTE材料と混合され、半田は低融点半田構成要素を有し、前記ゼロCTE材料はベータユークリプタイトである、方法。 - 半田付けする前記ステップは、半田合金または金属間化合物のレーザ半田付けを含む、請求項1に記載の方法。
- 前記二段半田の低融点半田構成要素を溶融させるための有効な温度は、150℃以下である、請求項1に記載の方法。
- 半田付けする前記ステップは、半田付けステップ中に電気装置を積層するために昇温して行なわれる、請求項1に記載の方法。
- 前記二段半田の低融点半田構成要素は、Sn(42)/Bi(58)、Sn(30−50)/Bi(70−30)、Sn(42)/Bi(57)/Ag(1)、Sn(30−50)/Bi(70−30)/Ag(0−5)、Sn(50)/In(50)、Sn(30−50)/In(70−30)、In(97)/Ag(3)、In(90−100)/Ag(0−10)、Sn(50)/Pb(32)/Cd(18)、Sn(30−60)/Pb(20−40)/Cd(10−30)、Sn(43)/Pb(43)/Bi(14)およびSn(30−50)/Pb(30−50)/Bi(5−20)からなるグループから選択される低融点半田として構成される、請求項1に記載の方法。
- 前記二段半田のベース半田構成要素は、Sn(90−100)/Ag(0−5)/Cu(0−5)、Sn(96.5)/Ag(3.5)、Sn(90−95)/Ag(0−5)、Sn(99)/Cu(1)、Sn(95−100)/Cu(0−5)、Sn(100)、Sn(63)/Pb(37)、Sn(20−80)/Pb(0−20)、Sn(62)/Pb(36)/Ag(2)、Sn(50−70)/Pb(30−50)/Ag(0−5)、Sn(60)/Pb(38)/Cu(2)およびSn(50−70)/Pb(30−50)/Cu(0−5)からなるグループから選択される、請求項5に記載の方法。
- 前記2つ以上の電気部品は、印刷回路基板、ボールグリッドアレイおよびピングリッドアレイからなるグループから選択される電気装置である、請求項1に記載の方法。
- 前記二段半田の低融点半田構成要素を溶融させる前に、2つ以上の電気部品の間に封止材を配置するステップをさらに含む、請求項1に記載の方法。
- 回路基板およびシリコン含有層を含む太陽電池アセンブリを備えた電気装置において電気的接続を設ける方法であって、前記方法は、
回路基板およびシリコン含有層の上または間に二段半田を配置するステップを含み、二段半田は、ベース半田構成要素上に配置された低融点半田構成要素を有し、さらに、
二段半田の低融点半田構成要素を溶融させ、低融点半田構成要素およびベース半田構成要素から半田合金または金属間化合物を形成するステップと、
半田合金または金属間化合物を半田付けして、回路基板およびシリコン含有層の間に電気的接続を設けるステップとを含み、
半田付けする前記ステップは、半田付けされる接合部上に、ゼロCTE材料と混合された二段半田を配置するステップを含み、前記二段半田は、半田と半田付けされる接合部における材料との熱膨張係数の不整合を減少させるのに有効な量のゼロCTE材料と混合され、半田は低融点半田構成要素を有し、前記ゼロCTE材料はベータユークリプタイトである、方法。 - 半田付けする前記ステップは、半田合金または金属間化合物のレーザ半田付けを含む、請求項9に記載の方法。
- 前記二段半田の低融点半田構成要素を溶融させるための有効な温度は、150℃以下である、請求項9に記載の方法。
- 前記太陽電池アセンブリは、前記回路基板に結合された支持層と、前記シリコン含有層に結合された保護被覆とをさらに含む、請求項9に記載の方法。
- 前記二段半田の低融点半田構成要素は、Sn(42)/Bi(58)、Sn(30−50)/Bi(70−30)、Sn(42)/Bi(57)/Ag(1)、Sn(30−50)/Bi(70−30)/Ag(0−5)、Sn(50)/In(50)、Sn(30−50)/In(70−30)、In(97)/Ag(3)、In(90−100)/Ag(0−10)、Sn(50)/Pb(32)/Cd(18)、Sn(30−60)/Pb(20−40)/Cd(10−30)、Sn(43)/Pb(43)/Bi(14)およびSn(30−50)/Pb(30−50)/Bi(5−20)からなるグループから選択される低融点半田として構成される、請求項9に記載の方法。
- 前記二段半田のベース半田構成要素は、Sn(90−100)/Ag(0−5)/Cu(0−5)、Sn(96.5)/Ag(3.5)、Sn(90−95)/Ag(0−5)、Sn(99)/Cu(1)、Sn(95−100)/Cu(0−5)、Sn(100)、Sn(63)/Pb(37)、Sn(20−80)/Pb(0−20)、Sn(62)/Pb(36)/Ag(2)、Sn(50−70)/Pb(30−50)/Ag(0−5)、Sn(60)/Pb(38)/Cu(2)およびSn(50−70)/Pb(30−50)/Cu(0−5)からなるグループから選択される、請求項13に記載の方法。
- 前記回路基板と前記シリコン含有層との間に配置された前記二段半田は、半田プリフォームとして構成される、請求項9に記載の方法。
- 前記二段半田の低融点半田構成要素を溶融させる前に、前記回路基板と前記シリコン含有層との間に封止材を配置するステップをさらに含む、請求項9に記載の方法。
- 前記二段半田のベース半田構成要素は、Sn(96.5)/Ag(3.0)/Cu(0.5)である、請求項6または14に記載の方法。
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EP2081729A4 (en) | 2010-12-22 |
EP2081729A2 (en) | 2009-07-29 |
CA2666363A1 (en) | 2008-04-24 |
WO2008049006A2 (en) | 2008-04-24 |
JP2010506733A (ja) | 2010-03-04 |
US20080173698A1 (en) | 2008-07-24 |
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