JP5265076B2 - 光起電性構成部材とその製造方法 - Google Patents
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
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- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
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Description
基板の上に正電極(典型的にはITO、即ち酸化インジウム錫)を設ける。その上に必要により中間層として、例えば、陰イオンとしてPSS含有のPEDOTからなるホール導電層が設けられる。その隣接層は吸収剤、即ち光起電性活性材料であり、通常は有機半導体(例えば、共役ポリマーとフラーレンとの混合物)である。これに陰極、即ちカソード(例えば、Ca/AgまたはLiF/Al)が続く。従来カソード材料として用いられてきたのは、非貴金属であって、例えばカルシウム、バリウム、フッ化リチウム、もしくは類似の材料であり、それらの材料は仕事関数が低かった。これらの電極は蒸着もしくはスパッタリングにより調製される。しかし、これらのカソード材料の感受性から、最良の結果を得るには、これらから成る層は、真空中にて調製されねばならない。
上にある。
ITOからなる基板に設けられるのは半導体層であって、例えば、P3HT:PCBM(ポリ(3−ヘキシルチオフェン):〔6,6〕−フェニルC61 ブチル酸メチルエステル)(poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester )混合物(低バンドギャップ)である。該半導体層は光起電性活性機能層を形成する。この層に続いて、例えばPEDOTからなる有機導電性機能層が置かれる。
先ず、例えばITO基板などの半透明基板に、半導体有機材料を塗布する。前記塗布は、印刷、スピン塗布などの大量生産に適する技術によって行うことが好ましい。好ましくは導電性有機材料よりなる頂部電極層もまた、半導体機能層に印刷技術を用いて設けることが好ましい。
例えば薄い箔もしくは薄い(極めて薄い)ガラスからなる基板1に対して、ITOからなる半透明な、もしくはアルミニウム、クロム、モリブデン、銅および/または亜鉛などの金属からなる不透明な底部電極2を設ける。この底部電極2に対して、光起電力活性であり、有機あるいは金属、もしくはハイブリッド材料であって、好ましくは溶媒での処理性が良好な半導体層3を設ける。この層の次には、半透明もしくは完全吸収性になされている頂部導電性機能層もしくは頂部電極4が設けられている。
形で存在してもよいし、同様に、無機粒子および/またはナノ粒子として存在してもよい。近似の、もしくは異なる電子親和力および/または近似のもしくは異なるバンドギャップを有する2種もしくはそれより多くの共役有機合成材料、無機粒子、および/またはナノ粒子の混合物であってもよい。
共役ポリマーや共役ポリマーを含有する混合物の薄膜は、スピン塗布によって製造できるし、他にもスクリーン印刷、インクジェット印刷、フレキソ印刷、グラビア印刷、凸版印刷もしくは平版印刷(もしくは他の/同等の溶剤付設工程)などの一般的な印刷方法によっても製造できる。ポリマーが用いられる場合には、これらの層は可撓性の基板上に付設することも可能である。
Claims (11)
- 基板と、
底部電極と、
有機材料よりなる光起電性活性層と、
主に有機材料からなる頂部電極とを備え、
前記底部電極は前記基板と前記光起電性活性層との間にあって第1の仕事関数を有し、
前記光起電性活性層は前記底部電極と前記頂部電極との間にあり、
前記頂部電極は不透明であり、かつ第1の仕事関数より高い第2の仕事関数を有することにより、前記底部電極はカソードとして作用し、前記頂部電極はアノードとして作用する、光起電性構成部材。 - リーケージ・コネクタが、前記構成部材が使用される際の抵抗損失を減少させるように前記頂部電極上に設けられている、請求項1に記載の構成部材。
- 前記リーケージ・コネクタが銀導電性ペーストよりなる、請求項2に記載の構成部材。
- 前記リーケージ・コネクタが前記頂部電極上に印刷される、請求項2に記載の構成部材。
- 前記頂部電極はPEDOTからなる、請求項1に記載の構成部材。
- 光起電性構成部材の製造方法であって、
基板に対して、第1の仕事関数を有する底部電極を設け、
その上に、有機材料からなる半導体光起電性活性機能層を設け、
さらに前記半導体光活性機能層上に主に有機材料からなる頂部電極を設ける、光起電性構成部材の製造方法であって、
前記頂部電極は不透明であり、かつ第1の仕事関数より高い第2の仕事関数を有することにより、前記底部電極はカソードとして作用し、前記頂部電極はアノードとして作用する光起電性構成部材の製造方法。 - 前記頂部電極は印刷技術により付設される、請求項6に記載の光起電性構成部材の製造方法。
- 前記頂部電極はPEDOTからなる、請求項6に記載の製造方法。
- リーケージ・コネクタが、前記構成部材が使用される際の抵抗損失を減少させるように前記頂部電極上に設けられている、請求項6に記載の製造方法。
- 前記リーケージ・コネクタが銀導電性ペーストよりなる、請求項9に記載の製造方法。
- 前記リーケージ・コネクタが前記頂部電極上に印刷される、請求項9に記載の製造方法。
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Application Number | Priority Date | Filing Date | Title |
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DE10255964A DE10255964A1 (de) | 2002-11-29 | 2002-11-29 | Photovoltaisches Bauelement und Herstellungsverfahren dazu |
DE10255964.3 | 2002-11-29 | ||
PCT/EP2003/013095 WO2004051756A2 (de) | 2002-11-29 | 2003-11-21 | Photovoltaisches bauelement und herstellungsverfahren dazu |
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JP2006508538A JP2006508538A (ja) | 2006-03-09 |
JP5265076B2 true JP5265076B2 (ja) | 2013-08-14 |
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JP2012256169A Pending JP2013034033A (ja) | 2002-11-29 | 2012-11-22 | 光起電性構成部材とその製造方法 |
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Country | Link |
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US (1) | US7612367B2 (ja) |
EP (1) | EP1565947B1 (ja) |
JP (2) | JP5265076B2 (ja) |
KR (1) | KR100973018B1 (ja) |
CN (2) | CN1729580A (ja) |
AU (1) | AU2003292075A1 (ja) |
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DE102008051656A1 (de) | 2008-10-08 | 2010-04-15 | Technische Universität Ilmenau | Verfahren zum Aufbringen einer metallischen Elektrode auf eine Polymerschicht |
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2002
- 2002-11-29 DE DE10255964A patent/DE10255964A1/de not_active Ceased
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- 2003-11-21 CN CNA2003801072543A patent/CN1729580A/zh active Pending
- 2003-11-21 WO PCT/EP2003/013095 patent/WO2004051756A2/de active Application Filing
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- 2003-11-21 EP EP03767605.3A patent/EP1565947B1/de not_active Expired - Lifetime
- 2003-11-21 CN CN2012100431766A patent/CN102738397A/zh active Pending
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US7612367B2 (en) | 2009-11-03 |
DE10255964A1 (de) | 2004-07-01 |
CN1729580A (zh) | 2006-02-01 |
JP2013034033A (ja) | 2013-02-14 |
US20060141662A1 (en) | 2006-06-29 |
KR20050088090A (ko) | 2005-09-01 |
JP2006508538A (ja) | 2006-03-09 |
CN102738397A (zh) | 2012-10-17 |
WO2004051756A2 (de) | 2004-06-17 |
EP1565947A2 (de) | 2005-08-24 |
EP1565947B1 (de) | 2019-03-20 |
AU2003292075A1 (en) | 2004-06-23 |
WO2004051756A3 (de) | 2005-06-23 |
KR100973018B1 (ko) | 2010-07-30 |
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