JP5259292B2 - 発光ダイオード - Google Patents
発光ダイオード Download PDFInfo
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- JP5259292B2 JP5259292B2 JP2008196779A JP2008196779A JP5259292B2 JP 5259292 B2 JP5259292 B2 JP 5259292B2 JP 2008196779 A JP2008196779 A JP 2008196779A JP 2008196779 A JP2008196779 A JP 2008196779A JP 5259292 B2 JP5259292 B2 JP 5259292B2
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- emitting diode
- refractive index
- light emitting
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- 239000004065 semiconductor Substances 0.000 claims description 48
- 239000000758 substrate Substances 0.000 claims description 13
- 229910002601 GaN Inorganic materials 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 238000005530 etching Methods 0.000 description 5
- 230000031700 light absorption Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 238000000605 extraction Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
- H01L33/465—Reflective coating, e.g. dielectric Bragg reflector with a resonant cavity structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
- H01L33/105—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
好ましくは、前記トンネル層は、n型不純物が高濃度でドープされたn型トンネル層(n++)である。
好ましくは、前記発光ダイオードは、前記活性層の下端面に形成される下部DBRをさらに備える。
図1を参照すると、本実施例の発光ダイオード1は、基板100、前記基板100上に形成されるn型半導体層220、活性層240、及びp型半導体層260を備える。前記活性層240は、前記n型半導体層220と前記p型半導体層260との間に介在され、前記p型半導体層260の上面には、透明電極層320が形成される。また、前記活性層240と前記p型半導体層260の一部が除去され、前記n型半導体層220の一部が上側に露出され得る。前記透明電極層320の上面には、p型電極パッド340が形成され、前記n型半導体層220の上面には、n型電極パッド440が形成され得る。
100 基板
210 バッファ層
220 n型半導体層
240 活性層
260 p型半導体層
310 トンネル層
320 透明電極層
330 DBR
340 p型電極パッド
342 開口部
440 n型電極パッド
Claims (14)
- n型半導体層、活性層、p型半導体層、及び透明電極層が基板上に形成された発光ダイオードであって、
前記p型半導体層と前記透明電極層との間に介在されるトンネル層と、
前記トンネル層を上側に露出させるように、前記透明電極層に形成された開口部と、
前記開口部内の前記トンネル層上に形成されるDBR(Distributed Bragg Reflector)と、
前記開口部内のDBRを覆うように、前記透明電極層上に形成される電極パッドと、
を備えることを特徴とする発光ダイオード。 - 前記電極パッドの側面部は、前記透明電極層の前記開口部の内側面と当接し、前記電極パッドの底部は、前記DBRと当接することを特徴とする請求項1に記載の発光ダイオード。
- 前記トンネル層は、n型不純物が高濃度でドープされたn型トンネル層(n++)であることを特徴とする請求項1に記載の発光ダイオード。
- 前記透明電極層は、ITO層であることを特徴とする請求項1に記載の発光ダイオード。
- 前記活性層の下端面に形成される下部DBRをさらに備えることを特徴とする請求項1に記載の発光ダイオード。
- 前記発光ダイオードは、窒化ガリウム系であることを特徴とする請求項1に記載の発光ダイオード。
- 前記DBRは、低屈折率層と高屈折率層とが繰り返して積層されていることを特徴とする請求項1に記載の発光ダイオード。
- 前記低屈折率層は、SiO2またはAl2O3を含むことを特徴とする請求項7に記載の発光ダイオード。
- 前記高屈折率層は、Si3N4、TiO2またはSi−Hを含むことを特徴とする請求項7に記載の発光ダイオード。
- 前記DBRは、前記電極パッドよりも高い屈折率の高屈折率層を有することを特徴とする請求項1に記載の発光ダイオード。
- 前記低屈折率層のいずれか一層が前記p型半導体層と当接することを特徴とする請求項7に記載の発光ダイオード。
- 前記DBRは、低屈折率層と高屈折率層とが複数交互に積層しており、前記低屈折率層は、SiO2またはAl2O3を含み、前記高屈折率層は、Si3N4またはTiO2を含み、
mを奇数とし、λを波長とし、nlを前記低屈折率層の屈折率とし、nhを前記高屈折率層の屈折率とし、第1の厚さをmλ/4nlにより表し、第2の厚さをmλ/4nhにより表したとき、前記低屈折率層は前記第1の厚さを有し、前記高屈折率層は前記第2の厚さを有し、前記DBRは波長λの光について少なくとも95%の反射率を有することを特徴とする請求項1に記載の発光ダイオード。 - 前記波長λは、前記活性層が発生する光の波長に対応していることを特徴とする請求項12に記載の発光ダイオード。
- n型半導体層、活性層、p型半導体層、及び透明電極層が基板上に形成された発光ダイオードであって、
前記透明電極層に形成された開口部と、
前記開口部内に一部が満たされるように形成される電極パッドと、
前記p型半導体層上に形成されたまま、前記開口部内において前記電極パッドと接触するn++またはアンドープ層と、
を備えることを特徴とする発光ダイオード。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2007-0108686 | 2007-10-29 | ||
KR1020070108686A KR101393353B1 (ko) | 2007-10-29 | 2007-10-29 | 발광다이오드 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009111342A JP2009111342A (ja) | 2009-05-21 |
JP2009111342A5 JP2009111342A5 (ja) | 2011-09-15 |
JP5259292B2 true JP5259292B2 (ja) | 2013-08-07 |
Family
ID=40581658
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008196779A Active JP5259292B2 (ja) | 2007-10-29 | 2008-07-30 | 発光ダイオード |
Country Status (3)
Country | Link |
---|---|
US (2) | US7863599B2 (ja) |
JP (1) | JP5259292B2 (ja) |
KR (1) | KR101393353B1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20170003105A (ko) * | 2015-06-30 | 2017-01-09 | 엘지이노텍 주식회사 | 발광소자 |
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WO2010100942A1 (ja) * | 2009-03-05 | 2010-09-10 | 株式会社小糸製作所 | 発光モジュール、発光モジュールの製造方法、および灯具ユニット |
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KR102353850B1 (ko) | 2015-06-30 | 2022-01-20 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 |
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