JP5236243B2 - Rfタグ - Google Patents
Rfタグ Download PDFInfo
- Publication number
- JP5236243B2 JP5236243B2 JP2007267761A JP2007267761A JP5236243B2 JP 5236243 B2 JP5236243 B2 JP 5236243B2 JP 2007267761 A JP2007267761 A JP 2007267761A JP 2007267761 A JP2007267761 A JP 2007267761A JP 5236243 B2 JP5236243 B2 JP 5236243B2
- Authority
- JP
- Japan
- Prior art keywords
- terminal
- tag
- transistor
- circuit unit
- antenna
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000003990 capacitor Substances 0.000 claims description 71
- 239000010408 film Substances 0.000 description 268
- 238000004891 communication Methods 0.000 description 50
- 239000004065 semiconductor Substances 0.000 description 47
- 238000000034 method Methods 0.000 description 46
- 239000010410 layer Substances 0.000 description 41
- 239000000758 substrate Substances 0.000 description 41
- 229910052751 metal Inorganic materials 0.000 description 30
- 239000002184 metal Substances 0.000 description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 29
- 229910052710 silicon Inorganic materials 0.000 description 29
- 239000010703 silicon Substances 0.000 description 29
- 239000000463 material Substances 0.000 description 27
- 230000008859 change Effects 0.000 description 23
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 23
- 239000012535 impurity Substances 0.000 description 22
- 230000015572 biosynthetic process Effects 0.000 description 20
- 229910052581 Si3N4 Inorganic materials 0.000 description 19
- 239000003814 drug Substances 0.000 description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 239000010936 titanium Substances 0.000 description 17
- 229910052814 silicon oxide Inorganic materials 0.000 description 16
- 230000002542 deteriorative effect Effects 0.000 description 14
- 239000010949 copper Substances 0.000 description 13
- 239000010409 thin film Substances 0.000 description 13
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- 230000006870 function Effects 0.000 description 12
- 239000011229 interlayer Substances 0.000 description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- 239000011347 resin Substances 0.000 description 12
- 229920005989 resin Polymers 0.000 description 12
- 238000005259 measurement Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 239000002356 single layer Substances 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 229910052750 molybdenum Inorganic materials 0.000 description 10
- 239000011733 molybdenum Substances 0.000 description 10
- 229910052759 nickel Inorganic materials 0.000 description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 239000013078 crystal Substances 0.000 description 9
- 238000007599 discharging Methods 0.000 description 9
- 239000010931 gold Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 229910052715 tantalum Inorganic materials 0.000 description 9
- 229910052719 titanium Inorganic materials 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 238000002425 crystallisation Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 8
- 229910052721 tungsten Inorganic materials 0.000 description 8
- 239000010937 tungsten Substances 0.000 description 8
- 239000000956 alloy Substances 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 7
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- 238000007650 screen-printing Methods 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- 206010020751 Hypersensitivity Diseases 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 230000008025 crystallization Effects 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- -1 nickel metal hydride Chemical class 0.000 description 6
- 238000009832 plasma treatment Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 229940079593 drug Drugs 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000012071 phase Substances 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 4
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 229910052744 lithium Inorganic materials 0.000 description 4
- 239000010955 niobium Substances 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 229910052779 Neodymium Inorganic materials 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 239000004952 Polyamide Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 208000026935 allergic disease Diseases 0.000 description 3
- 208000030961 allergic reaction Diseases 0.000 description 3
- 230000007815 allergy Effects 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000002847 impedance measurement Methods 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229920002647 polyamide Polymers 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 239000005368 silicate glass Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 101100263704 Arabidopsis thaliana VIN3 gene Proteins 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 229910004283 SiO 4 Inorganic materials 0.000 description 2
- 229910052775 Thulium Inorganic materials 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 238000001994 activation Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- OJIJEKBXJYRIBZ-UHFFFAOYSA-N cadmium nickel Chemical compound [Ni].[Cd] OJIJEKBXJYRIBZ-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000002788 crimping Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 235000013305 food Nutrition 0.000 description 2
- 229910052839 forsterite Inorganic materials 0.000 description 2
- 239000011245 gel electrolyte Substances 0.000 description 2
- 238000007646 gravure printing Methods 0.000 description 2
- 239000012943 hotmelt Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910001416 lithium ion Inorganic materials 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 229910052987 metal hydride Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 241001465754 Metazoa Species 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910004286 SiNxOy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 244000144972 livestock Species 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 150000002751 molybdenum Chemical class 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002831 nitrogen free-radicals Chemical class 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000007725 thermal activation Methods 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Images
Landscapes
- Near-Field Transmission Systems (AREA)
Description
(実施の形態1)
11 回路部
12 比較回路
13 スイッチ
14 負荷
15 整流回路
16 電流比較回路
100 RFタグ
101 保護回路部
102 保護回路制御回路部
103 整流回路部
104 定電圧電源回路部
105 クロック生成回路部
106 復調回路部
107 判定回路部
108 記憶装置
109 コントローラ回路部
110 符号化回路部
111 変調回路部
112 アンテナ
113 アンテナ
120 チップ本体
121 入力回路部
122 ロジック回路部
123 充電回路部
201 負荷
202 トランジスタ
203 トランジスタ
204 トランジスタ
205 容量
206 抵抗
207 ダイオード
208 トランジスタ
300 整流回路部
301 ダイオード
302 容量
303 ダイオード
304 容量
305 抵抗
400 RFタグ
401 バッテリー
410 充電機構制御回路部
420 整流回路部
500 整流回路部
501 ダイオード
502 容量
504 容量
505 抵抗
600 整流回路部
601 ダイオード
602 容量
603 ダイオード
604 容量
700 RFタグ
900 測定サンプル
901 ネットワークアナライザ
902 アンプ
903 サーキュレータ
904 同軸ケーブル
905 電波シールドボックス
906 高周波測定用プローブ
907 アッテネータ
101b 充電用保護回路部
102b 充電用保護回路制御回路部
9001 ステップ
9002 ステップ
9003 ステップ
9004 ステップ
9005 ステップ
9101 ステップ
9102 ステップ
9103 ステップ
9104 ステップ
9105 ステップ
9106 ステップ
9520 端末
9521 表示部
9522 物品B
9523 RFタグ
9531 RFタグ
9532 物品A
1601 基板
1602 剥離層
1603 絶縁膜
1604 半導体膜
1605 ゲート絶縁膜
1607 ゲート電極
1608 絶縁膜
1609 絶縁膜
1610 絶縁膜
1611 絶縁膜
1612 導電膜
1613 絶縁膜
1617 絶縁膜
1618 開口部
1620 シート材
1621 シート材
1631 導電膜
1901 シリコン基板
1902 p型ウェル
1903 フィールド酸化膜
1904 ゲート絶縁膜
1905 ゲート電極
1913 ソース領域
1914 ドレイン領域
1915 ソース領域
1916 ドレイン領域
1917 層間絶縁膜
1918 導電膜
1919 メタル電極
1920 メタル電極
1921 メタル電極
1922 メタル電極
1924 層間膜
1951 pチャネル型トランジスタ
1925 配線
1952 nチャネル型トランジスタ
1926 導電膜
1927 保護膜
1928 フィルム
1604a 半導体膜
1604b 半導体膜
1604c 半導体膜
1604d 半導体膜
1606a チャネル形成領域
1606b 不純物領域
1606c 不純物領域
1630a 薄膜トランジスタ
1630b 薄膜トランジスタ
1630c 薄膜トランジスタ
1630d 薄膜トランジスタ
1630a 薄膜トランジスタ
1905a ポリシリコン層
1905b シリサイド層
Claims (5)
- 第1の端子と第2の端子とを有するアンテナと、
前記アンテナの前記第1の端子と前記第2の端子とに電気的に接続する保護回路と、
前記アンテナの前記第1の端子と前記第2の端子とに電気的に接続する比較回路と、を有し、
前記保護回路はスイッチを有し、
前記比較回路はダイオード及び抵抗を有し、
前記抵抗の一端は前記第1の端子と電気的に接続し、
前記抵抗の他端は前記ダイオードの陽極と電気的に接続し、
前記ダイオードの陰極が前記第2の端子と電気的に接続し、
前記比較回路は、参照電圧と、前記抵抗の前記一端を介して入力される入力電圧とを比較する機能を有し、
前記保護回路の前記スイッチのオン/オフの制御は、前記抵抗の前記他端の電位によって制御されることを特徴とするRFタグ。 - 第1の端子と第2の端子とを有するアンテナと、
前記アンテナの前記第1の端子と前記第2の端子とに電気的に接続する保護回路と、
前記アンテナの前記第1の端子と前記第2の端子とに電気的に接続する比較回路と、を有し、
前記保護回路はスイッチを有し、
前記比較回路は、ダイオード、抵抗、第1のトランジスタ及び第2のトランジスタを有し、
前記抵抗の一端は、前記第1の端子と電気的に接続し、
前記抵抗の他端は、前記ダイオードの陽極と電気的に接続し、
前記ダイオードの陰極は、前記第2の端子と電気的に接続し、
前記第1のトランジスタのゲートは、前記抵抗の前記他端及び前記ダイオードの陽極と電気的に接続し、
前記第1のトランジスタのソース及びドレインの一方は、前記第1の端子と電気的に接続し、
前記第1のトランジスタのソース及びドレインの他方は、前記第2のトランジスタのソース及びドレインの一方と電気的に接続し、
前記第2のトランジスタのソース及びドレインの他方は前記第2の端子と電気的に接続し、
前記第2のトランジスタのゲートには基準電圧が印加され、
前記第1のトランジスタがオンのとき、前記保護回路の前記スイッチはオンし、前記第1のトランジスタがオフのとき、前記保護回路の前記スイッチはオフすることを特徴とするRFタグ。 - 請求項1又は請求項2において、
前記保護回路は負荷を有し、
前記保護回路の前記スイッチがオンした場合は、前記負荷に電流が流れることを特徴とするRFタグ。 - 請求項1乃至請求項3のいずれか一において、
位相補償容量を有し、
前記保護回路の前記スイッチはトランジスタであり、
前記位相補償容量の一方の電極は、前記アンテナの前記第2の端子に電気的に接続し、他方の電極は、前記保護回路の前記スイッチのゲートと電気的に接続することを特徴とするRFタグ。 - 請求項1乃至請求項4のいずれか一において、
前記比較回路及び前記保護回路が設けられた充電回路部と、
バッテリーとを有することを特徴とするRFタグ。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007267761A JP5236243B2 (ja) | 2006-10-18 | 2007-10-15 | Rfタグ |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006283935 | 2006-10-18 | ||
JP2006283935 | 2006-10-18 | ||
JP2007267761A JP5236243B2 (ja) | 2006-10-18 | 2007-10-15 | Rfタグ |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013066082A Division JP5799049B2 (ja) | 2006-10-18 | 2013-03-27 | 半導体装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2008123502A JP2008123502A (ja) | 2008-05-29 |
JP2008123502A5 JP2008123502A5 (ja) | 2010-11-11 |
JP5236243B2 true JP5236243B2 (ja) | 2013-07-17 |
Family
ID=39508134
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007267761A Expired - Fee Related JP5236243B2 (ja) | 2006-10-18 | 2007-10-15 | Rfタグ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5236243B2 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010032603A1 (en) | 2008-09-19 | 2010-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and wireless tag using the same |
US8224277B2 (en) * | 2008-09-26 | 2012-07-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
WO2010038712A1 (en) * | 2008-09-30 | 2010-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP5319469B2 (ja) * | 2008-10-03 | 2013-10-16 | 株式会社半導体エネルギー研究所 | Rfidタグ |
WO2011093150A1 (en) | 2010-01-29 | 2011-08-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP5551465B2 (ja) * | 2010-02-16 | 2014-07-16 | Necトーキン株式会社 | 非接触電力伝送及び通信システム |
JP5815337B2 (ja) * | 2010-09-13 | 2015-11-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
KR101822491B1 (ko) | 2011-04-01 | 2018-01-26 | 삼성전자주식회사 | 전압 조정 회로 및 이의 동작 방법 |
JP2014217707A (ja) * | 2013-05-11 | 2014-11-20 | 株式会社 ライフインターフェイス | 生体情報計測装置及び生体情報計測システム |
JP6844478B2 (ja) * | 2017-09-14 | 2021-03-17 | オムロン株式会社 | Rfタグ |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3755675B2 (ja) * | 1995-11-20 | 2006-03-15 | ソニー株式会社 | クランプ回路、cmosチツプic及び非接触型情報カード |
JP3392016B2 (ja) * | 1996-09-13 | 2003-03-31 | 株式会社日立製作所 | 電力伝送システム並びに電力伝送および情報通信システム |
JPH10307898A (ja) * | 1997-05-09 | 1998-11-17 | Toppan Printing Co Ltd | 充電式非接触icカードシステム |
JP2003085506A (ja) * | 2001-09-12 | 2003-03-20 | Yoshikawa Rf System Kk | データキャリアにおける過電圧防止回路 |
JP4536496B2 (ja) * | 2003-12-19 | 2010-09-01 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の駆動方法 |
JP2005202721A (ja) * | 2004-01-16 | 2005-07-28 | Matsushita Electric Ind Co Ltd | 非接触データキャリア |
-
2007
- 2007-10-15 JP JP2007267761A patent/JP5236243B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2008123502A (ja) | 2008-05-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6088627B2 (ja) | 半導体装置 | |
US20200227948A1 (en) | Power storage device and semiconductor device provided with the power storage device | |
JP5236243B2 (ja) | Rfタグ | |
US8358202B2 (en) | Semiconductor device | |
US8030885B2 (en) | Semiconductor device, communication system, and method of charging the semiconductor device | |
US8816484B2 (en) | Semiconductor device | |
TW200820537A (en) | Wireless power storage device, semiconductor device including the wireless power storage device, and method for operating the same | |
US8487745B2 (en) | Semiconductor device | |
JP4906093B2 (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100923 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100923 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120711 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120717 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120828 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130219 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130222 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130319 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130327 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 5236243 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160405 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |