JP5223001B2 - Magnetic sensor - Google Patents

Magnetic sensor Download PDF

Info

Publication number
JP5223001B2
JP5223001B2 JP2011510288A JP2011510288A JP5223001B2 JP 5223001 B2 JP5223001 B2 JP 5223001B2 JP 2011510288 A JP2011510288 A JP 2011510288A JP 2011510288 A JP2011510288 A JP 2011510288A JP 5223001 B2 JP5223001 B2 JP 5223001B2
Authority
JP
Japan
Prior art keywords
layer
magnetic
magnetoresistive element
magnetoresistive
magnetic layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011510288A
Other languages
Japanese (ja)
Other versions
JPWO2010122919A1 (en
Inventor
修二 前川
秀人 安藤
和彦 今井
雅之 尾花
浩太 朝妻
文人 小池
一郎 徳永
昌廣 川村
武也 猪俣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alps Alpine Co Ltd
Original Assignee
Alps Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alps Electric Co Ltd filed Critical Alps Electric Co Ltd
Priority to JP2011510288A priority Critical patent/JP5223001B2/en
Publication of JPWO2010122919A1 publication Critical patent/JPWO2010122919A1/en
Application granted granted Critical
Publication of JP5223001B2 publication Critical patent/JP5223001B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)

Description

本発明は、固定磁性層の磁化方向が反対方向の複数の磁気抵抗効果素子を備える磁気センサに関する。   The present invention relates to a magnetic sensor including a plurality of magnetoresistive elements whose magnetization directions of a pinned magnetic layer are opposite to each other.

複数の磁気抵抗効果素子を用いて構成されたブリッジ回路を備える磁気センサは、出力を大きくすべく、外部磁場に対して逆の電気特性となる２種類の前記磁気抵抗効果素子を使用する。磁気抵抗効果素子としてＧＭＲ素子（巨大磁気抵抗効果素子）を用いた場合、ＧＭＲ素子を構成する固定磁性層の磁化方向（Ｐ方向）を一方の磁気抵抗効果素子と他方の磁気抵抗効果素子とで反対にすれば、電気特性を逆にすることが出来る。従来では、次のような方法で磁気センサを製造していた。   A magnetic sensor including a bridge circuit configured using a plurality of magnetoresistive effect elements uses two types of the magnetoresistive effect elements having opposite electrical characteristics with respect to an external magnetic field in order to increase the output. When a GMR element (giant magnetoresistive effect element) is used as the magnetoresistive effect element, the magnetization direction (P direction) of the fixed magnetic layer constituting the GMR element is changed between one magnetoresistive effect element and the other magnetoresistive effect element. If reversed, the electrical characteristics can be reversed. Conventionally, a magnetic sensor has been manufactured by the following method.

まず図６（ａ）に示すように、基板１上に同形の４つの磁気抵抗効果素子２〜５を形成する。また個々の磁気抵抗効果素子２〜５の両端には端子部２ａ，２ｂ〜５ａ，５ｂを形成する。   First, as shown in FIG. 6A, four magnetoresistive elements 2 to 5 having the same shape are formed on the substrate 1. Terminal portions 2a, 2b to 5a, 5b are formed at both ends of each magnetoresistive element 2-5.

磁気抵抗効果素子２〜５は、反強磁性層／固定磁性層／非磁性層／フリー磁性層の積層構造を基本構造とするＧＭＲ素子（巨大磁気抵抗効果素子）である。ＧＭＲ素子を構成する固定磁性層は磁化方向が一方向に固定される。一方、フリー磁性層は、磁化方向が外部磁場により変動可能にされている。   The magnetoresistive elements 2 to 5 are GMR elements (giant magnetoresistive elements) having a basic structure of a laminated structure of antiferromagnetic layer / pinned magnetic layer / nonmagnetic layer / free magnetic layer. The pinned magnetic layer constituting the GMR element has a magnetization direction fixed in one direction. On the other hand, the magnetization direction of the free magnetic layer can be changed by an external magnetic field.

固定磁性層は、磁場中熱処理により反強磁性層との間で生じる交換結合磁界（Ｈｅｘ）により磁化固定される。   The pinned magnetic layer is pinned by an exchange coupling magnetic field (Hex) generated between the pinned magnetic layer and the antiferromagnetic layer by heat treatment in a magnetic field.

図６（ａ）のように、同形状の４つの磁気抵抗効果素子２〜５を形成した後、磁場中熱処理を施して、全ての磁気抵抗効果素子２〜５の固定磁性層を同じ磁化方向（Ｐ方向）に固定する。   As shown in FIG. 6A, after the four magnetoresistive elements 2 to 5 having the same shape are formed, a heat treatment in a magnetic field is performed so that the fixed magnetic layers of all the magnetoresistive elements 2 to 5 have the same magnetization direction. Fix in (P direction).

続いて、図６（ｂ）の工程では、基板１を分断してチップ化し、一方のチップ８を１８０度反転させ、各チップ７，８を共通の支持基板６上に設置する（図６（ｃ））。   Subsequently, in the step of FIG. 6B, the substrate 1 is divided into chips, one chip 8 is inverted 180 degrees, and the chips 7 and 8 are placed on the common support substrate 6 (FIG. 6 ( c)).

図６（ｃ）に示すように、一方のチップ７に設けられた磁気抵抗効果素子２，３の固定磁性層の磁化方向（Ｐ方向）と、他方のチップ８に設けられた磁気抵抗効果素子４，５の固定磁性層の磁化方向（Ｐ方向）は反対方向となる。これにより外部磁場に対し、磁気抵抗効果素子２，３の電気特性と、磁気抵抗効果素子４，５の電気特性を逆にすることが出来る。   As shown in FIG. 6C, the magnetization direction (P direction) of the pinned magnetic layer of the magnetoresistive effect elements 2 and 3 provided on one chip 7 and the magnetoresistive effect element provided on the other chip 8. The magnetization directions (P direction) of the pinned magnetic layers 4 and 5 are opposite to each other. Thereby, the electrical characteristics of the magnetoresistive effect elements 2 and 3 and the electrical characteristics of the magnetoresistive effect elements 4 and 5 can be reversed with respect to the external magnetic field.

特開２００７−２４２９８９号公報JP 2007-242989 A

しかしながら、従来では、各基板１ａ，１ｂ上に磁気抵抗効果素子２，３（４，５）が２つずつ設けられたチップ７，８を２つ必要とし、各チップ７，８を支持基板６に設置するため磁気センサが大型化する問題があった。   However, conventionally, two chips 7 and 8 each having two magnetoresistive elements 2 and 3 (4 and 5) provided on each substrate 1a and 1b are required, and each chip 7 and 8 is supported by a support substrate 6. There is a problem that the magnetic sensor is increased in size.

また従来では、基板１を切断した後、一方のチップ８を１８０度反転させて、さらに各チップ７，８を支持基板に貼り付ける（ダイボンディング）という一連の作業工程が必要になり、また１つの基板１から製造できる取り個数が少なくなり製造工程の煩雑化及び製造コストの上昇が問題となった。また製造ばらつきが生じやすく磁気センサの検出精度にもばらつきが生じやすくなった。   Conventionally, after cutting the substrate 1, one chip 8 is inverted 180 degrees, and a series of work steps of attaching each chip 7, 8 to the support substrate (die bonding) are required. The number of products that can be manufactured from one substrate 1 is reduced, which complicates the manufacturing process and raises the manufacturing cost. In addition, manufacturing variations tend to occur, and the detection accuracy of the magnetic sensor also tends to vary.

また図６（ｃ）に示す支持基板６には図示しない入力電極、グランド電極、出力電極が設けられており、各磁気抵抗効果素子２〜５に接続された端子部２ａ，２ｂ〜５ａ，５ｂと各電極間を例えばワイヤボンディングして初めてブリッジ回路を構成できる。このためワイヤボンディングを必要とする製造工程の煩雑さに加え、磁気抵抗効果素子２〜５の抵抗以外に余分な抵抗がブリッジ回路に加味され、ノイズが重畳されやすく、また中点電位もばらつきが生じやすくなり検出精度の低下を招きやすかった。   Further, the support substrate 6 shown in FIG. 6C is provided with an input electrode, a ground electrode, and an output electrode (not shown), and terminal portions 2a, 2b to 5a and 5b connected to the magnetoresistive elements 2 to 5, respectively. The bridge circuit can be configured only after wire bonding between the electrodes. For this reason, in addition to the complexity of the manufacturing process that requires wire bonding, extra resistance is added to the bridge circuit in addition to the resistance of the magnetoresistive effect elements 2 to 5, noise is easily superimposed, and the midpoint potential also varies. It was likely to occur and the detection accuracy was likely to be lowered.

そこで本発明は、上記従来の課題を解決するためのものであり、特に、１チップ構成で複数の磁気抵抗効果素子の固定磁性層の磁化方向を反平行に調整できる磁気センサを提供することを目的とする。   Accordingly, the present invention is to solve the above-described conventional problems, and in particular, to provide a magnetic sensor capable of adjusting the magnetization directions of the pinned magnetic layers of a plurality of magnetoresistive elements in a single chip configuration in antiparallel. Objective.

本発明は、磁気抵抗効果素子を備えた磁気センサであって、
同一基板に、下側磁気抵抗効果素子と、上側磁気抵抗効果素子とが絶縁中間層を介して積層され、
前記下側磁気抵抗効果素子及び前記上側磁気抵抗効果素子はともに、磁化方向が固定される固定磁性層と、前記固定磁性層に非磁性層を介して積層された外部磁場を受けて磁化方向が変動するフリー磁性層と、前記固定磁性層の前記非磁性層とは反対側の面に形成され、前記固定磁性層との間で磁場中熱処理により交換結合磁界を生じさせる反強磁性層と、を有する積層構造を備えており、
前記下側磁気抵抗効果素子及び前記上側磁気抵抗効果素子の少なくともどちらか一方の前記固定磁性層は、複数の磁性層と前記磁性層の間に介在する非磁性中間層との積層フェリ構造で構成されており、前記下側磁気抵抗効果素子を構成する固定磁性層と前記上側磁気抵抗効果素子を構成する固定磁性層の層構成が異なっており、
前記下側磁気抵抗効果素子を構成する前記固定磁性層の前記非磁性層との当接層の磁化方向と、前記上側磁気抵抗効果素子を構成する前記固定磁性層の前記非磁性層との当接層の磁化方向とが反平行になっていることを特徴とするものである。The present invention is a magnetic sensor comprising a magnetoresistive effect element,
On the same substrate, a lower magnetoresistive element and an upper magnetoresistive element are laminated via an insulating intermediate layer,
The lower magnetoresistive element and the upper magnetoresistive element both have a pinned magnetic layer whose magnetization direction is fixed, and an external magnetic field laminated on the pinned magnetic layer via a nonmagnetic layer so that the magnetization direction is A free magnetic layer that fluctuates, and an antiferromagnetic layer that is formed on the surface of the pinned magnetic layer opposite to the nonmagnetic layer and generates an exchange coupling magnetic field by heat treatment in a magnetic field between the pinned magnetic layer, A laminated structure having
The fixed magnetic layer of at least one of the lower magnetoresistive element and the upper magnetoresistive element is configured by a laminated ferrimagnetic structure including a plurality of magnetic layers and a nonmagnetic intermediate layer interposed between the magnetic layers. The pinned magnetic layer constituting the lower magnetoresistive element is different from the pinned magnetic layer constituting the upper magnetoresistive element,
The magnetization direction of the contact layer of the pinned magnetic layer constituting the lower magnetoresistive effect element with the nonmagnetic layer is matched with the nonmagnetic layer of the pinned magnetic layer constituting the upper magnetoresistive effect element. The magnetizing direction of the contact layer is antiparallel.

ここで「非磁性層との当接層」とは、固定磁性層が積層フェリ構造であるときは、複数の磁性層のうち、非磁性層に当接する磁性層を指し、固定磁性層が磁性層の単層構造、あるいは磁性層の積層構造であるときは、固定磁性層全体が前記当接層に該当する。   Here, the “contact layer with the nonmagnetic layer” refers to a magnetic layer in contact with the nonmagnetic layer among the plurality of magnetic layers when the fixed magnetic layer has a laminated ferrimagnetic structure, and the fixed magnetic layer is magnetic. In the case of a single layer structure or a laminated structure of magnetic layers, the entire pinned magnetic layer corresponds to the contact layer.

本発明では１チップにて構成でき、これにより、磁気センサの小型化を促進でき、また製造ばらつきを小さくでき、さらに取り個数を増やすことができ、製造コストを抑えることができる。しかも本発明では、１チップ構成でも、固定磁性層の構造を、下側磁気抵抗効果素子と上側磁気抵抗効果素子とで変更することで、１回の磁場中熱処理にて、下側磁気抵抗効果素子の固定磁性層の磁化方向と、上側磁気抵抗効果素子の固定磁性層の磁化方向とを反平行にすることが出来る。   According to the present invention, it can be configured by one chip, which can promote the downsizing of the magnetic sensor, reduce the manufacturing variation, increase the number of products, and reduce the manufacturing cost. In addition, in the present invention, even in a single chip configuration, the structure of the pinned magnetic layer is changed between the lower magnetoresistive element and the upper magnetoresistive element, so that the lower magnetoresistive effect can be achieved by a single heat treatment in a magnetic field. The magnetization direction of the pinned magnetic layer of the element and the magnetization direction of the pinned magnetic layer of the upper magnetoresistive element can be made antiparallel.

また、前記下側磁気抵抗効果素子及び前記上側磁気抵抗効果素子がともに積層フェリ構造であり、
前記下側磁気抵抗効果素子及び前記上側磁気抵抗効果素子のどちらか一方の前記固定磁性層を構成する前記磁性層の数が奇数であり、他方の前記固定磁性層を構成する前記磁性層の数が偶数であることが好ましい。また、前記下側磁気抵抗効果素子及び前記上側磁気抵抗効果素子のどちらか一方の前記固定磁性層を構成する前記磁性層の数が３であり、他方の前記固定磁性層を構成する前記磁性層の数が２であることがより好ましい。これにより、各磁気抵抗効果素子の素子高さを最小限に抑えつつ、固定磁性層からフリー磁性層への漏れ磁界の影響を弱めることができ、検出精度を向上させることができる。また固定磁性層の磁化固定力を強めることができる。The lower magnetoresistive element and the upper magnetoresistive element both have a laminated ferri structure,
The number of the magnetic layers constituting the fixed magnetic layer of either the lower magnetoresistive element or the upper magnetoresistive element is an odd number, and the number of the magnetic layers constituting the other fixed magnetic layer Is preferably an even number. In addition, the number of the magnetic layers constituting the fixed magnetic layer of one of the lower magnetoresistive element and the upper magnetoresistive element is 3, and the magnetic layer constituting the other fixed magnetic layer The number of is more preferably 2. As a result, the influence of the leakage magnetic field from the fixed magnetic layer to the free magnetic layer can be weakened while minimizing the element height of each magnetoresistive effect element, and the detection accuracy can be improved. In addition, the pinning force of the pinned magnetic layer can be increased.

また本発明では、前記絶縁中間層の表面が平坦化処理されており、前記絶縁中間層の平坦化面上に前記上側磁気抵抗効果素子が形成されていることが好ましい。これにより、上側磁気抵抗効果素子を高精度に所定形状に形成することができる。   In the present invention, it is preferable that the surface of the insulating intermediate layer is flattened, and the upper magnetoresistive element is formed on the flattened surface of the insulating intermediate layer. Thereby, the upper magnetoresistive element can be formed in a predetermined shape with high accuracy.

また本発明では、前記基板の同一面内に、複数の前記下側磁気抵抗効果素子と、複数の前記上側磁気抵抗効果素子と、入力電極と、グランド電極と、第１の出力電極と、第２の出力電極とが形成され、前記下側磁気抵抗効果素子と前記上側磁気抵抗効果素子とが各電極に接続されてブリッジ回路を構成していることが好ましい。このように１チップ内に磁気抵抗効果素子と共に各種の電極を配置できるため、磁気センサの小型化をより効果的に促進できる。また、１チップ内でブリッジ回路を構成できることで、ノイズ重畳を抑制でき、検出精度を向上できる。   In the present invention, the plurality of lower magnetoresistive elements, the plurality of upper magnetoresistive elements, the input electrode, the ground electrode, the first output electrode, It is preferable that two output electrodes are formed, and the lower magnetoresistive element and the upper magnetoresistive element are connected to each electrode to form a bridge circuit. As described above, since various electrodes can be arranged together with the magnetoresistive effect element in one chip, the miniaturization of the magnetic sensor can be promoted more effectively. Further, since a bridge circuit can be configured within one chip, noise superposition can be suppressed and detection accuracy can be improved.

また本発明では、平面視にて、複数の前記下側磁気抵抗効果素子及び複数の前記上側磁気抵抗効果素子はＸ方向に並設されており、前記磁気抵抗効果素子を介して、前記Ｘ方向に直交するＹ方向の両側位置の一方に、前記入力電極と前記グランド電極とがＸ方向に並設され、他方に、前記第１の出力電極と、前記第２の出力電極とがＸ方向に並設されていることが好ましい。これにより各磁気抵抗効果素子の素子長さを同じに合わせ易く、ブリッジ回路の中点電位を高精度に調整しやすい。また磁気抵抗効果素子から各電極までの引き出し長さを小さくでき、より磁気センサの小型化に貢献できる。   In the present invention, the plurality of lower magnetoresistive elements and the plurality of upper magnetoresistive elements are arranged in parallel in the X direction in plan view, and the X direction is interposed via the magnetoresistive elements. The input electrode and the ground electrode are arranged in parallel in the X direction at one of the two positions in the Y direction perpendicular to the X direction, and the first output electrode and the second output electrode are arranged in the X direction on the other side. It is preferable that they are arranged side by side. As a result, the element lengths of the magnetoresistive elements can be easily adjusted to be the same, and the midpoint potential of the bridge circuit can be easily adjusted with high accuracy. In addition, the lead length from the magnetoresistive element to each electrode can be reduced, which can contribute to further downsizing of the magnetic sensor.

また本発明では、少なくとも前記下側磁気抵抗効果素子及び前記上側磁気抵抗効果素子の双方と接続される電極は、前記下側磁気抵抗効果素子から延出して形成された前記下側磁気抵抗効果素子と同じ層構成の下側積層膜及び前記上側磁気抵抗効果素子から延出して形成された前記上側磁気抵抗効果素子と同じ層構成の上側積層膜が前記絶縁中間層を介して積層された積層部を有し、前記電極には、前記上側積層膜の側面から前記下側積層膜まで露出する凹部が設けられ、前記凹部内に埋め込まれた導電層と、前記上側積層膜及び前記下側積層膜とが電気的に接続されていることが好ましい。これにより、簡単な構造にて、電気接続の安定性を向上させることができる。   In the present invention, at least the lower magnetoresistive effect element formed by extending an electrode connected to both the lower magnetoresistive effect element and the upper magnetoresistive effect element from the lower magnetoresistive effect element A laminated portion in which an upper laminated film having the same layer configuration as that of the upper magnetoresistive effect element formed by extending from the lower laminated film and the upper magnetoresistive effect element is laminated via the insulating intermediate layer The electrode is provided with a recess exposed from a side surface of the upper laminated film to the lower laminated film, and a conductive layer embedded in the concave, the upper laminated film, and the lower laminated film Are preferably electrically connected. Thereby, the stability of electrical connection can be improved with a simple structure.

本発明では、前記絶縁中間層は、下から第１の絶縁層、第２の絶縁層及び第３の絶縁層の順に積層され、前記第１の絶縁層はＡｌ2Ｏ3層、前記第２の絶縁層は、ＳｉＯ2層あるいはＳｉＮ層、前記第３の絶縁層は、Ａｌ2Ｏ3層で形成されることが好ましい。In the present invention, the insulating intermediate layer is laminated in order of a first insulating layer, a second insulating layer, and a third insulating layer from the bottom, and the first insulating layer is an Al 2 O 3 layer, the second insulating layer The insulating layer is preferably an SiO 2 layer or an SiN layer, and the third insulating layer is preferably an Al 2 O 3 layer.

また本発明では、前記第２の絶縁層の膜厚は５０００Å以上で２００００Å以下であることが好ましい。前記第２の絶縁層の膜厚は１００００Å以上で１５０００Å以下であることがより好ましい。   Moreover, in this invention, it is preferable that the film thickness of a said 2nd insulating layer is 5000 to 20000 mm. More preferably, the thickness of the second insulating layer is 10000 to 15000.

本発明の磁気センサによれば、１チップにて構成でき、これにより、磁気センサの小型化を促進でき、また製造ばらつきを小さくでき、さらに取り個数を増やすことができ、製造コストを抑えることができる。しかも本発明では、１チップ構成でも、固定磁性層の構造を、下側磁気抵抗効果素子と上側磁気抵抗効果素子とで変更することで、１回の磁場中熱処理にて、下側磁気抵抗効果素子の固定磁性層の磁化方向と、上側磁気抵抗効果素子の固定磁性層の磁化方向とを反平行にすることが出来る。   According to the magnetic sensor of the present invention, it can be configured with one chip, thereby facilitating the miniaturization of the magnetic sensor, reducing the manufacturing variation, further increasing the number of picked up, and reducing the manufacturing cost. it can. In addition, in the present invention, even in a single chip configuration, the structure of the pinned magnetic layer is changed between the lower magnetoresistive element and the upper magnetoresistive element, so that the lower magnetoresistive effect can be achieved by a single heat treatment in a magnetic field. The magnetization direction of the pinned magnetic layer of the element and the magnetization direction of the pinned magnetic layer of the upper magnetoresistive element can be made antiparallel.

本実施形態における磁気センサの平面図、The top view of the magnetic sensor in this embodiment, 図１に示す磁気センサをＡ−Ａ線に沿って切断した部分拡大縦断面図、FIG. 1 is a partially enlarged vertical sectional view of the magnetic sensor shown in FIG. 図３（ａ）は、図１に示す磁気センサをＢ−Ｂ線に沿って切断した部分拡大縦断面図、図３（ｂ）は図３（ａ）の変形例を示す部分拡大縦断面図、3A is a partially enlarged longitudinal sectional view of the magnetic sensor shown in FIG. 1 cut along the line BB, and FIG. 3B is a partially enlarged longitudinal sectional view showing a modification of FIG. 3A. , 図４（ａ）（ｂ）は、下側磁気抵抗効果素子及び上側磁気抵抗効果素子の積層構造を拡大縦断面図、4 (a) and 4 (b) are enlarged longitudinal sectional views of the laminated structure of the lower magnetoresistive element and the upper magnetoresistive element, 本実施形態の磁気センサの回路図、A circuit diagram of the magnetic sensor of the present embodiment, 従来の磁気センサの製造工程を示す平面図、A plan view showing a manufacturing process of a conventional magnetic sensor,

図１は本実施形態における磁気センサの平面図、図２は、図１に示す磁気センサをＡ−Ａ線に沿って切断した部分拡大縦断面図、図３（ａ）は、図１に示す磁気センサをＢ−Ｂ線に沿って切断した部分拡大縦断面図、図３（ｂ）は図３（ａ）の変形例を示す部分拡大縦断面図、図４（ａ）（ｂ）は、下側磁気抵抗効果素子及び上側磁気抵抗効果素子の積層構造を拡大縦断面図、図５は、本実施形態の磁気センサの回路図、である。   FIG. 1 is a plan view of a magnetic sensor in the present embodiment, FIG. 2 is a partially enlarged longitudinal sectional view of the magnetic sensor shown in FIG. 1 cut along the line AA, and FIG. 3A is shown in FIG. FIG. 3B is a partially enlarged longitudinal sectional view of the magnetic sensor cut along the line BB, FIG. 3B is a partially enlarged longitudinal sectional view showing a modification of FIG. 3A, and FIGS. FIG. 5 is an enlarged longitudinal sectional view of the laminated structure of the lower magnetoresistive element and the upper magnetoresistive element, and FIG. 5 is a circuit diagram of the magnetic sensor of the present embodiment.

本実施形態の磁気センサ１０は、図１，図２に示すように、同一の基板１１に、２つの下側磁気抵抗効果素子１３，１４と、２つの上側磁気抵抗効果素子１５，１６とが絶縁中間層を介して積層されている。   As shown in FIGS. 1 and 2, the magnetic sensor 10 of the present embodiment includes two lower magnetoresistive elements 13 and 14 and two upper magnetoresistive elements 15 and 16 on the same substrate 11. They are stacked via an insulating intermediate layer.

図２に示すように、基板１１上には絶縁下地層１２が形成され、この絶縁下地層１２の上に下側磁気抵抗効果素子１３，１４が形成されている。また、上側磁気抵抗効果素子１５，１６は絶縁中間層１７の平坦化面１７ａ上に形成される。図２に示すように上側磁気抵抗効果素子１５，１６上は保護層１８で覆われている。ここで絶縁下地層１２は例えば膜厚が１０００Å程度のＡｌ2Ｏ3で形成される。また、絶縁中間層１７は、下から、例えば膜厚が１０００Å程度のＡｌ2Ｏ3層と、膜厚が５０００Å〜２００００Å程度のＳｉＯ2層又はＳｉＮ層と、膜厚が１０００Å程度のＡｌ2Ｏ3層との積層構造で形成される。As shown in FIG. 2, an insulating base layer 12 is formed on the substrate 11, and lower magnetoresistive elements 13 and 14 are formed on the insulating base layer 12. The upper magnetoresistive elements 15 and 16 are formed on the planarized surface 17 a of the insulating intermediate layer 17. As shown in FIG. 2, the upper magnetoresistive effect elements 15 and 16 are covered with a protective layer 18. Here, the insulating base layer 12 is formed of, for example, Al 2 O 3 having a thickness of about 1000 mm. The insulating intermediate layer 17 includes, from below, for example, an Al 2 O 3 layer having a thickness of about 1000 mm, an SiO 2 layer or SiN layer having a thickness of about 5000 to 20000 mm, and an Al 2 O film having a thickness of about 1000 mm. It is formed in a laminated structure with 3 layers.

ここで、絶縁中間層１７は、上記のように３層構造とすることが好ましい。下から第１の絶縁層、第２の絶縁層、第３の絶縁層の順に積層され、第１の絶縁層を構成するＡｌ2Ｏ3層は、下側磁気抵抗効果素子１３，１４を酸化等から保護する。また第２の絶縁層を構成するＳｉＯ2層又はＳｉＮ層は、下側磁気抵抗効果素子１３，１４と上側磁気抵抗効果素子１５，１６間を電気的に分離し且つ耐ＥＳＤに必要十分な膜厚を有する。また、第３の絶縁層を構成するＡｌ2Ｏ3層は、上側磁気検出素子１５，１６のＧＭＲ特性の安定を得る目的のため設けられる。特に、ＥＳＤ耐性を確保するために、第２の絶縁層の膜厚は５０００Å以上で、更に好ましくは１００００Å以上必要である。また、第２の絶縁層の膜厚は厚すぎると成膜プロセス及び電極の上下コンタクトのためのエッチングプロセス時間が長くなるため、２００００Å以下、特に好ましくは１５０００Å以下とすることが好ましい。Here, the insulating intermediate layer 17 preferably has a three-layer structure as described above. The first insulating layer, the second insulating layer, and the third insulating layer are stacked in this order from the bottom, and the Al 2 O 3 layer constituting the first insulating layer oxidizes the lower magnetoresistive elements 13 and 14. Protect from etc. The SiO 2 layer or SiN layer constituting the second insulating layer is a film that electrically separates the lower magnetoresistive effect elements 13 and 14 and the upper magnetoresistive effect elements 15 and 16 and is necessary and sufficient for ESD resistance. Have a thickness. Further, the Al 2 O 3 layer constituting the third insulating layer is provided for the purpose of stabilizing the GMR characteristics of the upper magnetic sensing elements 15 and 16. In particular, in order to ensure ESD resistance, the film thickness of the second insulating layer is 5000 mm or more, more preferably 10,000 mm or more. In addition, if the thickness of the second insulating layer is too thick, the film forming process and the etching process time for the upper and lower contacts of the electrodes become longer. Therefore, the thickness is preferably 20000 mm or less, particularly preferably 15000 mm or less.

また保護層１８は、２０００Å程度のＡｌ2Ｏ3層やＳｉＯ2層で形成される。なお上記の絶縁構成はあくまでも一例である。上記では無機絶縁材料を使用したが有機絶縁材料を用いることもできる。The protective layer 18 is formed of an Al 2 O 3 layer or SiO 2 layer of about 2000 mm. Note that the above insulation configuration is merely an example. In the above, an inorganic insulating material is used, but an organic insulating material can also be used.

図１に示すように上側磁気抵抗効果素子１５，１６はＸ方向に間隔を空けて配置されている。上側磁気抵抗効果素子１５，１６はミアンダ形状で形成されている。下側磁気抵抗効果素子１３，１４は、絶縁中間層１７を介して上側磁気抵抗効果素子１５，１６と重なるようにミアンダ形状で形成されており、図１では、上側磁気抵抗効果素子１５，１６の側面からＸ−Ｙ平面にはみ出した部分を点線で示している。   As shown in FIG. 1, the upper magnetoresistive elements 15 and 16 are arranged with an interval in the X direction. The upper magnetoresistive elements 15 and 16 are formed in a meander shape. The lower magnetoresistive elements 13 and 14 are formed in a meander shape so as to overlap the upper magnetoresistive elements 15 and 16 with the insulating intermediate layer 17 interposed therebetween. In FIG. A portion that protrudes from the side surface to the XY plane is indicated by a dotted line.

図１に示すように、磁気抵抗効果素子１３〜１６の図示Ｙ１側には第１の出力電極２０と第２の出力電極２１とがＸ方向に間隔を空けて配置されている。図１に示すように、上側磁気抵抗効果素子１５の左側先端部１５ａが、第１の出力電極２０の位置まで延ばされて前記第１の出力電極２０に接続されている。また、下側磁気抵抗効果素子１３の右側先端部１３ａが、第１の出力電極２０の位置まで延ばされて前記第１の出力電極２０に接続されている。また、上側磁気抵抗効果素子１６の左側先端部１６ａが、第２の出力電極２１の位置まで延ばされて前記第２の出力電極２１に接続されている。また、下側磁気抵抗効果素子１４の右側先端部１４ａが、第２の出力電極２１の位置まで延ばされて前記第２の出力電極２１に接続されている。   As shown in FIG. 1, on the Y1 side of the magnetoresistive effect elements 13 to 16, a first output electrode 20 and a second output electrode 21 are arranged with an interval in the X direction. As shown in FIG. 1, the left end portion 15 a of the upper magnetoresistive element 15 extends to the position of the first output electrode 20 and is connected to the first output electrode 20. Further, the right end portion 13 a of the lower magnetoresistive effect element 13 is extended to the position of the first output electrode 20 and connected to the first output electrode 20. Further, the left end portion 16 a of the upper magnetoresistive element 16 is extended to the position of the second output electrode 21 and connected to the second output electrode 21. The right end portion 14 a of the lower magnetoresistive element 14 is extended to the position of the second output electrode 21 and connected to the second output electrode 21.

図１に示すように、磁気抵抗効果素子１３〜１６の図示Ｙ２側には入力電極２２と、グランド電極２３，２４とがＸ方向に間隔を空けて配置されている。図１の実施形態ではグランド電極２３，２４が２つ、入力電極２２が１つである。   As shown in FIG. 1, on the Y2 side of the magnetoresistive effect elements 13 to 16, an input electrode 22 and ground electrodes 23 and 24 are arranged with an interval in the X direction. In the embodiment of FIG. 1, there are two ground electrodes 23 and 24 and one input electrode 22.

図１に示すように、入力電極２２は、グランド電極２３，２４の間に配置される。そして、上側磁気抵抗効果素子１５の右側先端部１５ｂが、入力電極２２の位置まで延ばされて前記入力電極２２に接続されている。また、下側磁気抵抗効果素子１４の左側先端部１４ｂが、入力電極２２の位置まで延ばされて前記入力電極２２に接続されている。   As shown in FIG. 1, the input electrode 22 is disposed between the ground electrodes 23 and 24. The right end portion 15 b of the upper magnetoresistive element 15 is extended to the position of the input electrode 22 and connected to the input electrode 22. The left end portion 14 b of the lower magnetoresistive element 14 is extended to the position of the input electrode 22 and connected to the input electrode 22.

また図１に示すように、下側磁気抵抗効果素子１３の左側先端部１３ｂが、図示Ｘ２側のグランド電極２３の位置まで延ばされて前記グランド電極２３に接続されている。また、上側磁気抵抗効果素子１６の右側先端部１６ｂが、図示Ｘ１側のグランド電極２４の位置まで延ばされて前記グランド電極２４に接続されている。   As shown in FIG. 1, the left end portion 13b of the lower magnetoresistive effect element 13 is extended to the position of the ground electrode 23 on the X2 side in the drawing and connected to the ground electrode 23. Further, the right end portion 16b of the upper magnetoresistive element 16 is extended to the position of the ground electrode 24 on the X1 side in the drawing and connected to the ground electrode 24.

図３（ａ）は入力電極２２の縦断面である。図３（ａ）に示すように、入力電極２２には、例えばＡｕでメッキ形成された導電層２５が設けられ、導電層２５の露出表面２５ａが電極表面となっている。図３（ａ）に示すように、導電層２５は、入力電極２２の略中央位置に設けられ、導電層２５の周囲には、下側磁気抵抗効果素子１３，１４と同じ構成の下側積層膜２６と、前記下側積層膜２６の上に絶縁中間層１７を介して、上側磁気抵抗効果素子１５，１６と同じ構成の上側積層膜２７との積層部３２が設けられる。図３（ａ）の構造の製造方法について説明する。   FIG. 3A is a longitudinal section of the input electrode 22. As shown in FIG. 3A, the input electrode 22 is provided with a conductive layer 25 plated with, for example, Au, and an exposed surface 25a of the conductive layer 25 is an electrode surface. As shown in FIG. 3A, the conductive layer 25 is provided at a substantially central position of the input electrode 22, and a lower laminated structure having the same configuration as the lower magnetoresistive effect elements 13 and 14 is provided around the conductive layer 25. A laminated portion 32 of the film 26 and the upper laminated film 27 having the same configuration as the upper magnetoresistive effect elements 15 and 16 is provided on the lower laminated film 26 via the insulating intermediate layer 17. A method for manufacturing the structure shown in FIG.

例えばまず、下側磁気抵抗効果素子を基板１１の面内全域にスパッタ法等で形成し、エッチング法を用いて、ミアンダ形状の下側磁気抵抗効果素子１３，１４を形成するとともに、下側積層膜２６を各電極２０〜２４の形成領域に形成する。このとき、下側積層膜２６を、グランド電極２４の形成領域に形成することは必須でない。グランド電極２４は、上側磁気抵抗効果素子１６とのみ接続されるためである。また、第１出力電極２０、第２の出力電極２１、グランド電極２３及び入力電極２２に形成される下側積層膜２６については、各下側磁気抵抗効果素子１３，１４と一体形成する。   For example, first, the lower magnetoresistive effect element is formed over the entire surface of the substrate 11 by a sputtering method or the like, and the lower magnetoresistive effect elements 13 and 14 are formed by using an etching method. The film | membrane 26 is formed in the formation area of each electrode 20-24. At this time, it is not essential to form the lower laminated film 26 in the formation region of the ground electrode 24. This is because the ground electrode 24 is connected only to the upper magnetoresistive element 16. In addition, the lower laminated film 26 formed on the first output electrode 20, the second output electrode 21, the ground electrode 23, and the input electrode 22 is integrally formed with the lower magnetoresistive elements 13 and 14.

そして、下側磁気抵抗効果素子１３，１４上及び下側積層膜２６上に絶縁中間層１７を形成し、絶縁中間層１７の表面を平坦化処理した後、前記絶縁中間層１７上に、上側磁気抵抗効果素子１５，１６を形成するとともに、上側積層膜２７を、各電極２０〜２４の形成領域に形成する。   Then, the insulating intermediate layer 17 is formed on the lower magnetoresistive effect elements 13 and 14 and the lower laminated film 26, the surface of the insulating intermediate layer 17 is planarized, and then the upper side of the insulating intermediate layer 17 is The magnetoresistive elements 15 and 16 are formed, and the upper laminated film 27 is formed in the formation region of the electrodes 20 to 24.

例えば上側磁気抵抗効果素子を基板１１の面内全域にスパッタ法等で形成し、エッチング法を用いて、ミアンダ形状の上側磁気抵抗効果素子１５，１６を形成するとともに、上側積層膜２７を各電極２０〜２４の形成領域に形成する。このとき、上側積層膜２７を、グランド電極２３の形成領域に形成することは必須でない。グランド電極２３は、下側磁気抵抗効果素子１３とのみ接続されるためである。また、第１出力電極２０、第２の出力電極２１、グランド電極２４及び入力電極２２に形成される上側積層膜２７については、各上側磁気抵抗効果素子１５，１６と一体形成する。   For example, the upper magnetoresistive effect element is formed over the entire surface of the substrate 11 by sputtering or the like, and the upper magnetoresistive effect elements 15 and 16 having a meander shape are formed by using an etching method. It forms in the formation area of 20-24. At this time, it is not essential to form the upper laminated film 27 in the formation region of the ground electrode 23. This is because the ground electrode 23 is connected only to the lower magnetoresistive element 13. In addition, the upper laminated film 27 formed on the first output electrode 20, the second output electrode 21, the ground electrode 24 and the input electrode 22 is formed integrally with the upper magnetoresistive elements 15 and 16.

続いて、エッチングにて、各電極２０〜２４の略中央部分の下側積層膜２６，絶縁中間層１７及び上側積層膜２７を除去して凹部３３を形成する。そして、図３（ａ）に示すように、凹部３３内に露出する上側積層膜２７の上面から、上側積層膜２７、絶縁中間層１７及び下側積層膜２６の側面、さらには絶縁下地層１２の上面にかけて導電下地層２８を例えばスパッタ法を用いて形成する。そして、その後に形成された保護層１８に導電下地層２８にまで通じる凹部１８ａを形成し、その凹部１８ａ内に導電層２５を例えばメッキ形成する。   Subsequently, by etching, the lower laminated film 26, the insulating intermediate layer 17 and the upper laminated film 27 in a substantially central portion of each of the electrodes 20 to 24 are removed to form a recess 33. 3A, from the upper surface of the upper laminated film 27 exposed in the recess 33, the side surfaces of the upper laminated film 27, the insulating intermediate layer 17 and the lower laminated film 26, and further the insulating underlayer 12 A conductive underlayer 28 is formed on the upper surface of the substrate by, for example, sputtering. Then, a recess 18a leading to the conductive base layer 28 is formed in the protective layer 18 formed thereafter, and the conductive layer 25 is plated, for example, in the recess 18a.

図３（ａ）に示す断面構造に形成することで、各電極２０〜２４と、下側磁気抵抗効果素子１３，１６及び上側磁気抵抗効果素子１５，１６間の電気的な接触安定性を向上させることができる。しかも、下側磁気抵抗効果素子１３，１４と導電層２５間を、導電下地層２８及び下側積層膜２６を通じて、上側磁気抵抗効果素子１５，１６と導電層２５間を、導電下地層２８及び上側積層膜２７を通じて、電気的に接続でき簡単且つ確実な接続構造を実現できる。   By forming the cross-sectional structure shown in FIG. 3A, the electrical contact stability between the electrodes 20 to 24, the lower magnetoresistive effect elements 13 and 16, and the upper magnetoresistive effect elements 15 and 16 is improved. Can be made. In addition, the lower magnetoresistive effect elements 13 and 14 and the conductive layer 25 are connected between the upper magnetoresistive effect elements 15 and 16 and the conductive layer 25 through the conductive base layer 28 and the lower laminated film 26. A simple and reliable connection structure that can be electrically connected through the upper laminated film 27 can be realized.

図３（ｂ）に示す他の実施形態では、下側積層膜２６及び絶縁中間層１７まで形成し、各電極２０〜２４の略中央領域の下側積層膜２６及び絶縁中間層１７をエッチングで除去した後、絶縁下地層１２が露出した凹部２９内にＡｕやＡｌ等の第１の導電層３０を形成し、続いて、上側積層膜２７の形成後、第１の導電層３０の表面から上側積層膜２７の表面にかけて、Ａｕ等でメッキされた第２の導電層３１を形成している。   In another embodiment shown in FIG. 3B, the lower laminated film 26 and the insulating intermediate layer 17 are formed, and the lower laminated film 26 and the insulating intermediate layer 17 in the substantially central region of each electrode 20 to 24 are etched. After the removal, a first conductive layer 30 such as Au or Al is formed in the recess 29 where the insulating base layer 12 is exposed. Subsequently, after the upper laminated film 27 is formed, the first conductive layer 30 is exposed from the surface. A second conductive layer 31 plated with Au or the like is formed over the surface of the upper laminated film 27.

この実施形態でも、下側磁気抵抗効果素子１３，１４と導電層３０，３１間を、下側積層膜２６を通じて、上側磁気抵抗効果素子１５，１６と導電層３０，３１間を、上側積層膜２７を通じて、電気的に接続でき簡単且つ確実な接続構造を実現できる。   Also in this embodiment, the lower magnetoresistive effect elements 13 and 14 and the conductive layers 30 and 31 are passed through the lower laminated film 26, and the upper magnetoresistive effect elements 15 and 16 and the conductive layers 30 and 31 are passed through the upper laminated film. 27, a simple and reliable connection structure that can be electrically connected can be realized.

図３の断面構造は、下側磁気抵抗効果素子１３，１４及び上側磁気抵抗効果素子１５，１６の双方が接続される入力電極２２、出力電極２０，２１に好ましく適用される。   The cross-sectional structure of FIG. 3 is preferably applied to the input electrode 22 and the output electrodes 20 and 21 to which both the lower magnetoresistive effect elements 13 and 14 and the upper magnetoresistive effect elements 15 and 16 are connected.

図４（ａ）は、例えば下側磁気抵抗効果素子１３，１４の積層構造を示す縦断面図であり、図４（ｂ）は、例えば上側磁気抵抗効果素子１５，１６の積層構造を示す縦断面図である。   4A is a longitudinal sectional view showing a laminated structure of lower magnetoresistive elements 13 and 14, for example, and FIG. 4B is a longitudinal section showing a laminated structure of upper magnetoresistive elements 15 and 16, for example. FIG.

図４（ａ）に示すように、下側磁気抵抗効果素子１３，１４は、下から下地層４０、反強磁性層４１、固定磁性層４２、非磁性層４３、フリー磁性層４４及び保護層４５の順に積層された巨大磁気抵抗効果素子（ＧＭＲ素子）である。   As shown in FIG. 4A, the lower magnetoresistive elements 13 and 14 are composed of a base layer 40, an antiferromagnetic layer 41, a fixed magnetic layer 42, a nonmagnetic layer 43, a free magnetic layer 44, and a protective layer from the bottom. These are giant magnetoresistive elements (GMR elements) stacked in the order of 45.

反強磁性層４１は、Ｉｒ−Ｍｎ合金（イリジウム−マンガン合金）などの反強磁性材料で形成されている。非磁性層４３はＣｕ（銅）などである。フリー磁性層４４は、Ｎｉ−Ｆｅ合金（ニッケル−鉄合金）などの軟磁性材料で形成されている。保護層４５はＴａ（タンタル）などである。   The antiferromagnetic layer 41 is made of an antiferromagnetic material such as an Ir—Mn alloy (iridium-manganese alloy). The nonmagnetic layer 43 is made of Cu (copper) or the like. The free magnetic layer 44 is formed of a soft magnetic material such as a Ni—Fe alloy (nickel-iron alloy). The protective layer 45 is Ta (tantalum) or the like.

図４（ａ）に示すように下側磁気抵抗効果素子１３，１４の固定磁性層４２は、下から第１磁性層４６、非磁性中間層４７、第２磁性層４８の順に積層された積層フェリ構造である。例えば、第１磁性層４６及び第２磁性層４８は共にＣｏ−Ｆｅ合金で形成され、非磁性中間層４７はＲｕ（ルテニウム）で形成される。   As shown in FIG. 4A, the pinned magnetic layer 42 of the lower magnetoresistive effect elements 13 and 14 is a laminate in which a first magnetic layer 46, a nonmagnetic intermediate layer 47, and a second magnetic layer 48 are laminated in this order from the bottom. It is a ferri structure. For example, the first magnetic layer 46 and the second magnetic layer 48 are both formed of a Co—Fe alloy, and the nonmagnetic intermediate layer 47 is formed of Ru (ruthenium).

反強磁性層４１と第１磁性層４６の間では磁場中熱処理により交換結合磁界（Ｈｅｘ）が生じるとともに、第１磁性層４６と第２磁性層４８の間ではＲＫＫＹ的相互作用が生じて、第１磁性層４６と第２磁性層４８の磁化方向は互いに反平行状態で固定される。図４（ａ）に示すように、例えば、第１磁性層４６の磁化方向（Ｐ１方向）はＸ２方向で、第２磁性層４８の磁化方向（Ｐ２方向）はＸ１方向である。本実施形態において、「固定磁性層４２の磁化方向」とは、非磁性層４３に接する第２磁性層４８の磁化方向（Ｐ２方向）を指す。   An exchange coupling magnetic field (Hex) is generated between the antiferromagnetic layer 41 and the first magnetic layer 46 by heat treatment in a magnetic field, and an RKKY-like interaction is generated between the first magnetic layer 46 and the second magnetic layer 48. The magnetization directions of the first magnetic layer 46 and the second magnetic layer 48 are fixed in an antiparallel state. As shown in FIG. 4A, for example, the magnetization direction (P1 direction) of the first magnetic layer 46 is the X2 direction, and the magnetization direction (P2 direction) of the second magnetic layer 48 is the X1 direction. In the present embodiment, the “magnetization direction of the pinned magnetic layer 42” refers to the magnetization direction (P2 direction) of the second magnetic layer 48 in contact with the nonmagnetic layer 43.

図４（ａ）に示す下側磁気抵抗効果素子１３，１４の総厚は、２００〜３００Å程度である。   The total thickness of the lower magnetoresistive effect elements 13 and 14 shown in FIG. 4A is about 200 to 300 mm.

また図４（ｂ）に示すように、上側磁気抵抗効果素子１５，１６は、下から下地層４０、反強磁性層４１、固定磁性層４９、非磁性層４３、フリー磁性層４４及び保護層４５の順に積層された巨大磁気抵抗効果素子（ＧＭＲ素子）である。図４（ｂ）に示すように、上側磁気抵抗効果素子１５，１６の固定磁性層４９は、下から第１磁性層５０、非磁性中間層５１、第２磁性層５２、非磁性中間層５３、第３磁性層５４の順に積層された積層フェリ構造である。例えば、第１磁性層５０、第２磁性層５２、及び第３磁性層５４は共にＣｏ−Ｆｅ合金で形成され、非磁性中間層５１，５３はＲｕ（ルテニウム）で形成される。   As shown in FIG. 4B, the upper magnetoresistive elements 15 and 16 are composed of the underlayer 40, the antiferromagnetic layer 41, the fixed magnetic layer 49, the nonmagnetic layer 43, the free magnetic layer 44, and the protective layer from the bottom. These are giant magnetoresistive elements (GMR elements) stacked in the order of 45. As shown in FIG. 4B, the pinned magnetic layer 49 of the upper magnetoresistive effect elements 15 and 16 includes a first magnetic layer 50, a nonmagnetic intermediate layer 51, a second magnetic layer 52, and a nonmagnetic intermediate layer 53 from the bottom. , A laminated ferrimagnetic structure in which the third magnetic layer 54 is laminated in this order. For example, the first magnetic layer 50, the second magnetic layer 52, and the third magnetic layer 54 are all formed of a Co—Fe alloy, and the nonmagnetic intermediate layers 51 and 53 are formed of Ru (ruthenium).

反強磁性層４１と第１磁性層５０の間では磁場中熱処理により交換結合磁界（Ｈｅｘ）が生じるとともに、第１磁性層５０と第２磁性層５２の間、及び第２磁性層５２と第３磁性層５４の間ではＲＫＫＹ的相互作用が生じて、非磁性中間層５１，５３を介して互いに対向する磁性層同士の磁化方向は反平行状態で固定される。図４（ｂ）に示すように、例えば、第１磁性層５０及び第３磁性層５４の磁化方向（Ｐ１方向）はＸ２方向で、第２磁性層４８の磁化方向（Ｐ２方向）はＸ１方向である。図４（ｂ）での「固定磁性層４９の磁化方向」は、非磁性層４３に接する第３磁性層５４の磁化方向（Ｐ３方向）である。   An exchange coupling magnetic field (Hex) is generated between the antiferromagnetic layer 41 and the first magnetic layer 50 by heat treatment in a magnetic field, and between the first magnetic layer 50 and the second magnetic layer 52 and between the second magnetic layer 52 and the first magnetic layer 50. An RKKY interaction occurs between the three magnetic layers 54, and the magnetization directions of the magnetic layers facing each other through the nonmagnetic intermediate layers 51 and 53 are fixed in an antiparallel state. As shown in FIG. 4B, for example, the magnetization direction (P1 direction) of the first magnetic layer 50 and the third magnetic layer 54 is the X2 direction, and the magnetization direction (P2 direction) of the second magnetic layer 48 is the X1 direction. It is. The “magnetization direction of the pinned magnetic layer 49” in FIG. 4B is the magnetization direction (P3 direction) of the third magnetic layer 54 in contact with the nonmagnetic layer 43.

図４（ｂ）に示す上側磁気抵抗効果素子１５，１６の総厚は、下側磁気抵抗効果素子１３，１４と同様、２００〜３００Å程度であるが、下側磁気抵抗効果素子１３，１４よりも層数が多い分、やや総厚が、下側磁気抵抗効果素子１３，１４よりも厚くなる（数Å〜数十Å程度厚くなる）。   The total thickness of the upper magnetoresistive effect elements 15 and 16 shown in FIG. 4B is about 200 to 300 mm, similar to the lower magnetoresistive effect elements 13 and 14, but from the lower magnetoresistive effect elements 13 and 14. However, since the number of layers is larger, the total thickness is slightly thicker than the lower magnetoresistive elements 13 and 14 (thickness is about several to several tens of kilometers).

図４（ａ）（ｂ）に示すように、下側磁気抵抗効果素子１３，１４の固定磁性層４２の磁化方向（Ｐ２方向）と、上側磁気抵抗効果素子１５，１６の固定磁性層４９の磁化方向（Ｐ３方向）とが反平行になっている。   As shown in FIGS. 4A and 4B, the magnetization direction (P2 direction) of the pinned magnetic layer 42 of the lower magnetoresistive effect elements 13 and 14 and the pinned magnetic layer 49 of the upper magnetoresistive effect elements 15 and 16 The magnetization direction (P3 direction) is antiparallel.

一方、フリー磁性層４４の磁化方向は、外部磁場により変動する。例えば、外部磁場がＸ１方向に作用するとフリー磁性層４４の磁化はＸ１方向に向く。このとき下側磁気抵抗効果素子１３，１４の固定磁性層４２の磁化方向（Ｐ２方向）はＸ１方向であるため、フリー磁性層４４の磁化方向と固定磁性層４２の磁化方向とが平行になり下側磁気抵抗効果素子１３，１４の電気抵抗値は最小値になる。一方、上側磁気抵抗効果素子１５，１６の固定磁性層４２の磁化方向（Ｐ３方向）はＸ２方向であるため、フリー磁性層４４の磁化方向と固定磁性層４２の磁化方向とが反平行になり上側磁気抵抗効果素子１５，１６の電気抵抗値は最大値になる。このように下側磁気抵抗効果素子１３，１４と上側磁気抵抗効果素子１５，１６の固定磁性層の磁化方向は反平行であるため、下側磁気抵抗効果素子１３，１４の電気特性と、上側磁気抵抗効果素子１５，１６の電気特性は逆になる。   On the other hand, the magnetization direction of the free magnetic layer 44 varies depending on the external magnetic field. For example, when an external magnetic field acts in the X1 direction, the magnetization of the free magnetic layer 44 is oriented in the X1 direction. At this time, since the magnetization direction (P2 direction) of the pinned magnetic layer 42 of the lower magnetoresistive effect elements 13 and 14 is the X1 direction, the magnetization direction of the free magnetic layer 44 and the magnetization direction of the pinned magnetic layer 42 become parallel. The electric resistance value of the lower magnetoresistive effect elements 13 and 14 becomes the minimum value. On the other hand, since the magnetization direction (P3 direction) of the pinned magnetic layer 42 of the upper magnetoresistive elements 15 and 16 is the X2 direction, the magnetization direction of the free magnetic layer 44 and the magnetization direction of the pinned magnetic layer 42 are antiparallel. The electric resistance value of the upper magnetoresistive effect elements 15 and 16 becomes the maximum value. Since the magnetization directions of the pinned magnetic layers of the lower magnetoresistive elements 13 and 14 and the upper magnetoresistive elements 15 and 16 are thus antiparallel, the electrical characteristics of the lower magnetoresistive elements 13 and 14 and the upper The electrical characteristics of the magnetoresistive elements 15 and 16 are reversed.

図５に示すように下側磁気抵抗効果素子１３，１４及び上側磁気抵抗効果素子１５，１６によりブリッジ回路が構成される。そして図５に示すブリッジ回路の第１の出力電極２０及び第２の出力電極２１からの出力は、下側磁気抵抗効果素子１３，１４及び上側磁気抵抗効果素子１５，１６の電気抵抗値の変動に基づいて変化する。第１の出力電極２０及び第２の出力電極２１は、図示しない集積回路の差動増幅器に接続され、これにより差動出力を得ることが出来る。   As shown in FIG. 5, the lower magnetoresistive effect elements 13 and 14 and the upper magnetoresistive effect elements 15 and 16 constitute a bridge circuit. The outputs from the first output electrode 20 and the second output electrode 21 of the bridge circuit shown in FIG. 5 are fluctuations in the electrical resistance values of the lower magnetoresistive elements 13 and 14 and the upper magnetoresistive elements 15 and 16. Change based on. The first output electrode 20 and the second output electrode 21 are connected to a differential amplifier of an integrated circuit (not shown), whereby a differential output can be obtained.

図１，図２に示すように、本実施形態では、同一の基板１１に、下側磁気抵抗効果素子１３，１４と上側磁気抵抗効果素子１５，１６とを絶縁中間層１７を介して積層しており、１チップにて磁気センサ１０を構成できる。これにより、磁気センサ１０の小型化を促進できる。また従来のように複数のチップで磁気センサ１０を構成する場合に比べて、各チップ間の位置決め等が必要なく製造ばらつきを小さくでき、さらに取り個数を増やすことができ、製造コストを抑えることができる。   As shown in FIGS. 1 and 2, in this embodiment, lower magnetoresistive elements 13 and 14 and upper magnetoresistive elements 15 and 16 are stacked on the same substrate 11 with an insulating intermediate layer 17 interposed therebetween. The magnetic sensor 10 can be configured with one chip. Thereby, size reduction of the magnetic sensor 10 can be promoted. In addition, as compared with the conventional case where the magnetic sensor 10 is composed of a plurality of chips, there is no need for positioning between the chips and manufacturing variations can be reduced, the number of products can be increased, and manufacturing costs can be reduced. it can.

しかも本実施形態では、１チップ構成でも、固定磁性層４２，４９の構造を、下側磁気抵抗効果素子１３，１４と上側磁気抵抗効果素子１５，１６とで異ならすことで、１回の磁場中熱処理にて、下側磁気抵抗効果素子１３，１４の固定磁性層４２の磁化方向（Ｐ２方向）と、上側磁気抵抗効果素子１５，１６の固定磁性層４９の磁化方向（Ｐ３方向）とを反平行にすることが出来る。   Moreover, in the present embodiment, even in a one-chip configuration, the structure of the pinned magnetic layers 42 and 49 is made different between the lower magnetoresistive effect elements 13 and 14 and the upper magnetoresistive effect elements 15 and 16, so that one magnetic field is generated. In the middle heat treatment, the magnetization direction (P2 direction) of the pinned magnetic layer 42 of the lower magnetoresistance effect elements 13 and 14 and the magnetization direction (P3 direction) of the pinned magnetic layer 49 of the upper magnetoresistance effect elements 15 and 16 are set. Can be antiparallel.

磁場中熱処理は、上記したように、反強磁性層４１と第１磁性層４６，５０間に交換結合磁界（Ｈｅｘ）を生じさせるために行う。この磁場中熱処理は、下側磁気抵抗効果素子１３，１４及び上側磁気抵抗効果素子１５，１６の双方を形成した後、下側磁気抵抗効果素子１３，１４及び上側磁気抵抗効果素子１５，１６に対して同時に行なう。   As described above, the heat treatment in the magnetic field is performed to generate an exchange coupling magnetic field (Hex) between the antiferromagnetic layer 41 and the first magnetic layers 46 and 50. This heat treatment in a magnetic field forms both the lower magnetoresistive effect elements 13 and 14 and the upper magnetoresistive effect elements 15 and 16 and then applies them to the lower magnetoresistive effect elements 13 and 14 and the upper magnetoresistive effect elements 15 and 16. For the same time.

下側磁気抵抗効果素子１３，１４及び上側磁気抵抗効果素子１５，１６の固定磁性層４２，４９は共に積層フェリ構造である。本実施形態では、図４（ａ）に示すように下側磁気抵抗効果素子１３，１４の固定磁性層４２を構成する磁性層４６，４８を２つ、図４（ｂ）に示すように、上側磁気抵抗効果素子１５，１６の固定磁性層４９を構成する磁性層５０，５２，５４を３つ設けている。そして、下側磁気抵抗効果素子１３，１４及び上側磁気抵抗効果素子１５，１６に対して磁場中熱処理を施すと、反強磁性層４１との間で交換結合磁界（Ｈｅｘ）が生じ、さらに各磁性層間でＲＫＫＹ的相互作用が生じ、これにより、非磁性中間層を介して対向する磁性層同士は互いに反平行に磁化固定される。本実施形態では、一方の磁気抵抗効果素子の固定磁性層を構成する磁性層の数を偶数に、他方の磁気抵抗効果素子の固定磁性層を構成する磁性層の数を奇数にしたことで、１回の磁場中熱処理でも、下側磁気抵抗効果素子１３，１４の固定磁性層４２の磁化方向（Ｐ２方向）と、上側磁気抵抗効果素子１５，１６の固定磁性層４９の磁化方向（Ｐ３方向）とを反平行にすることが可能になる。   Both the pinned magnetic layers 42 and 49 of the lower magnetoresistive effect elements 13 and 14 and the upper magnetoresistive effect elements 15 and 16 have a laminated ferrimagnetic structure. In the present embodiment, two magnetic layers 46 and 48 constituting the fixed magnetic layer 42 of the lower magnetoresistance effect elements 13 and 14 as shown in FIG. 4A, and as shown in FIG. Three magnetic layers 50, 52, and 54 constituting the fixed magnetic layer 49 of the upper magnetoresistive effect elements 15 and 16 are provided. When the lower magnetoresistive effect elements 13 and 14 and the upper magnetoresistive effect elements 15 and 16 are subjected to heat treatment in a magnetic field, an exchange coupling magnetic field (Hex) is generated between the antiferromagnetic layer 41 and each of them. An RKKY-like interaction occurs between the magnetic layers, whereby the magnetic layers facing each other through the nonmagnetic intermediate layer are fixed in magnetization antiparallel to each other. In the present embodiment, the number of magnetic layers constituting the pinned magnetic layer of one magnetoresistive effect element is an even number, and the number of magnetic layers constituting the pinned magnetic layer of the other magnetoresistive effect element is odd, Even in one heat treatment in a magnetic field, the magnetization direction (P2 direction) of the pinned magnetic layer 42 of the lower magnetoresistance effect elements 13 and 14 and the magnetization direction (P3 direction) of the pinned magnetic layer 49 of the upper magnetoresistance effect elements 15 and 16 ) Can be made antiparallel.

例えば、図４（ａ）に示す下側磁気抵抗効果素子１３，１４の固定磁性層４２の構成はそのままで、図４（ｂ）に示す上側磁気抵抗効果素子１５，１６を構成する固定磁性層４９を１つの磁性層の単層構造で形成することもできる。これによっても、下側磁気抵抗効果素子１３，１４の固定磁性層４２の磁化方向（Ｐ２方向）と、上側磁気抵抗効果素子１５，１６の固定磁性層４９の磁化方向とを反平行にすることが可能になる。   For example, the configuration of the pinned magnetic layer 42 of the lower magnetoresistive effect elements 13 and 14 shown in FIG. 4A is not changed, and the pinned magnetic layer constituting the upper magnetoresistive effect elements 15 and 16 shown in FIG. 49 may be formed of a single-layer structure of one magnetic layer. This also makes the magnetization direction (P2 direction) of the pinned magnetic layer 42 of the lower magnetoresistive elements 13 and 14 antiparallel to the magnetization direction of the pinned magnetic layer 49 of the upper magnetoresistive elements 15 and 16. Is possible.

ただし固定磁性層を磁性層の単層（あるいは積層）構造とするより図４（ａ）（ｂ）に示す積層フェリ構造としたほうが、固定磁性層４２，４９からフリー磁性層４４に漏れる磁界を小さくでき、検出精度を向上させることができて好適である。また、積層フェリ構造とすることで、固定磁性層の磁化固定力を強めることが出来る。   However, the magnetic field leaking from the pinned magnetic layers 42 and 49 to the free magnetic layer 44 is more enhanced when the pinned magnetic layer has the laminated ferrimagnetic structure shown in FIGS. 4A and 4B than the single layer (or laminated) structure of the magnetic layer. This is preferable because it can be made small and the detection accuracy can be improved. In addition, by adopting a laminated ferrimagnetic structure, the magnetization pinning force of the pinned magnetic layer can be increased.

また固定磁性層を構成する磁性層の数は限定しないが、図４（ａ）（ｂ）に示すように、積層フェリ構造で形成された一方の固定磁性層４２の磁性層４６，４８を２つ、積層フェリ構造で形成された他方の固定磁性層４２の磁性層５０，５２，５４を３つとすることで、両方の固定磁性層を積層フェリ構造としたときに最小数の磁性層で一方の固定磁性層４２の磁化方向（Ｐ２方向）と他方の固定磁性層４９の磁化方向（Ｐ３方向）とを反平行にできる。   The number of magnetic layers constituting the pinned magnetic layer is not limited. As shown in FIGS. 4A and 4B, two magnetic layers 46 and 48 of one pinned magnetic layer 42 formed of a laminated ferrimagnetic structure are provided. In addition, by using three magnetic layers 50, 52, and 54 of the other pinned magnetic layer 42 formed with a laminated ferrimagnetic structure, one of the minimum number of magnetic layers can be obtained when both of the pinned magnetic layers have a laminated ferrimagnetic structure. The magnetization direction (P2 direction) of the pinned magnetic layer 42 and the magnetization direction (P3 direction) of the other pinned magnetic layer 49 can be made antiparallel.

なお図４（ａ）の構成が上側磁気抵抗効果素子１５，１６の層構成で、図４（ｂ）の構成が下側磁気抵抗効果素子１３，１４の層構成であってもよい。   4A may be the layer configuration of the upper magnetoresistive effect elements 15 and 16, and the configuration of FIG. 4B may be the layer configuration of the lower magnetoresistive effect elements 13 and 14.

図２に示すように絶縁中間層１７の表面は平坦化処理により平坦化面１７ａで形成されている。これにより、絶縁中間層１７上に形成される上側磁気抵抗効果素子１５，１６を高精度に所定形状で形成することが可能である。   As shown in FIG. 2, the surface of the insulating intermediate layer 17 is formed by a flattened surface 17a by a flattening process. Thereby, it is possible to form the upper magnetoresistive elements 15 and 16 formed on the insulating intermediate layer 17 with a predetermined shape with high accuracy.

また図１に示すように、本実施形態では、基板１１の同一面内に、複数の下側磁気抵抗効果素子１３，１４及び上側磁気抵抗効果素子１５，１６と、入力電極２２と、グランド電極２３，２４と、第１の出力電極２０と、第２の出力電極２１とが形成されている。そして、図１，図５に示すように、各下側磁気抵抗効果素子１３，１４及び各上側磁気抵抗効果素子１５，１６とが各電極２０〜２４に接続されてブリッジ回路を構成している。   As shown in FIG. 1, in the present embodiment, a plurality of lower magnetoresistive elements 13 and 14 and upper magnetoresistive elements 15 and 16, an input electrode 22, and a ground electrode are formed on the same surface of the substrate 11. 23, 24, the first output electrode 20, and the second output electrode 21 are formed. 1 and 5, the lower magnetoresistive elements 13 and 14 and the upper magnetoresistive elements 15 and 16 are connected to the electrodes 20 to 24 to form a bridge circuit. .

このように本実施形態では、１チップ内に磁気抵抗効果素子１３〜１６と共に各電極２０〜２４を配置するため磁気センサ１０の小型化を効果的に促進できる。また１チップ内でブリッジ回路を構成できることで、各チップ間をワイヤボンディングで接続してブリッジ回路を構成するような場合に比べて余分な抵抗がブリッジ回路に乗りにくくノイズ重畳を抑制でき、検出精度を効果的に向上させることができる。   Thus, in this embodiment, since each electrode 20-24 is arrange | positioned with the magnetoresistive effect elements 13-16 in 1 chip | tip, size reduction of the magnetic sensor 10 can be promoted effectively. In addition, since a bridge circuit can be configured in one chip, it is difficult for extra resistors to ride on the bridge circuit compared to the case where a bridge circuit is configured by connecting each chip by wire bonding, and noise superposition can be suppressed. Can be improved effectively.

また、図１に示すように、複数の下側磁気抵抗効果素子１３，１４及び上側磁気抵抗効果素子１５，１６は、Ｘ方向に並設されている。そして、図１に示すように、磁気抵抗効果素子１３〜１６を介してＸ方向と直交するＹ方向の両側の一方（図１ではＹ２側）に、入力電極２２と、グランド電極２３，２４とがＸ方向に並設されている。また、Ｙ方向の他方（図１ではＹ１側）には、第１の出力電極２０と第２の出力電極２１とがＸ方向に並設されている。   Further, as shown in FIG. 1, the plurality of lower magnetoresistive elements 13 and 14 and upper magnetoresistive elements 15 and 16 are arranged in parallel in the X direction. As shown in FIG. 1, the input electrode 22 and the ground electrodes 23 and 24 are arranged on one side (Y2 side in FIG. 1) on both sides in the Y direction orthogonal to the X direction via the magnetoresistive elements 13 to 16. Are juxtaposed in the X direction. Further, the first output electrode 20 and the second output electrode 21 are juxtaposed in the X direction on the other side in the Y direction (Y1 side in FIG. 1).

図１に示すように、第１の出力電極２０及び第２の出力電極２１のＸ方向への幅寸法Ｔ１，Ｔ２は、ほぼ磁気抵抗効果素子１３〜１６のＸ方向への幅寸法と同じである。第１の出力電極２０は、下側磁気抵抗効果素子１３及び上側磁気抵抗効果素子１５とＹ１−Ｙ２方向へ対向する位置に設けられる。また、第２の出力電極２１は、下側磁気抵抗効果素子１４及び上側磁気抵抗効果素子１６とＹ１−Ｙ２方向へ対向する位置に設けられる。そして、各磁気抵抗効果素子１３〜１６の一方の先端部１３ａ〜１６ａがＹ１方向へ、各磁気抵抗効果素子１３〜１５と出力電極２０，２１間のギャップ分延ばされて、各磁気抵抗効果素子１３〜１５と各出力電極２０，２１が接続されている。   As shown in FIG. 1, the width dimensions T1, T2 in the X direction of the first output electrode 20 and the second output electrode 21 are substantially the same as the width dimensions in the X direction of the magnetoresistive elements 13-16. is there. The first output electrode 20 is provided at a position facing the lower magnetoresistive element 13 and the upper magnetoresistive element 15 in the Y1-Y2 direction. The second output electrode 21 is provided at a position facing the lower magnetoresistive element 14 and the upper magnetoresistive element 16 in the Y1-Y2 direction. And one front-end | tip part 13a-16a of each magnetoresistive effect element 13-16 is extended by the gap between each magnetoresistive effect element 13-15 and the output electrodes 20 and 21 to the Y1 direction, and each magnetoresistive effect is shown. The elements 13 to 15 and the output electrodes 20 and 21 are connected.

また図１に示すように、入力電極２２は、上側磁気抵抗効果素子１５の先端部１５ｂと下側磁気抵抗効果素子１４の先端部１４ｂとＹ１−Ｙ２方向にて対向する位置に設けられている。また、グランド電極２３は、下側磁気抵抗効果素子１３の先端部１３ｂとＹ１−Ｙ２方向にて対向する位置に設けられ、グランド電極２４は、上側磁気抵抗効果素子１６の先端部１６ｂとＹ１−Ｙ２方向にて対向する位置に設けられる。そして、各磁気抵抗効果素子１３〜１６の先端部１３ｂ〜１６ｂがＹ２方向へ、各磁気抵抗効果素子１３〜１６と入力電極２２及びグランド電極２３，２４間のギャップ分延ばされて、各磁気抵抗効果素子１３〜１６と入力電極２２及びグランド電極２３，２４が接続されている。   As shown in FIG. 1, the input electrode 22 is provided at a position facing the tip portion 15b of the upper magnetoresistive element 15 and the tip portion 14b of the lower magnetoresistive element 14 in the Y1-Y2 direction. . The ground electrode 23 is provided at a position facing the tip portion 13b of the lower magnetoresistive element 13 in the Y1-Y2 direction, and the ground electrode 24 is provided with the tip portion 16b of the upper magnetoresistive element 16 and the Y1- It is provided at a position facing in the Y2 direction. And the front-end | tip parts 13b-16b of each magnetoresistive effect element 13-16 are extended by the gap between each magnetoresistive effect element 13-16, the input electrode 22, and the ground electrodes 23 and 24 to the Y2 direction, and each magnetism The resistance effect elements 13 to 16, the input electrode 22, and the ground electrodes 23 and 24 are connected.

図１に示すように、各磁気抵抗効果素子１３〜１６は略同一のミアンダ形状で形成され、また図１のように、各磁気抵抗効果素子１３〜１６と各電極２０〜２４とを配置することで、各磁気抵抗効果素子１３〜１６の先端部１３ａ，１３ｂ〜１６ａ，１６ｂの各電極２０〜２４までの延出長さもほぼ同じに出来る。したがって、各磁気抵抗効果素子１３〜１６の素子長さを同一に合わせ易く、ブリッジ回路の中点電位を高精度に調整しやすい。また、磁気抵抗効果素子１３〜１６から各電極２０〜２４までの各先端部１３ａ，１６ａ〜１３ｂ，１６ｂの延出長さを小さくでき、より効果的に磁気センサ１の小型化を促進できる。   As shown in FIG. 1, each magnetoresistive effect element 13-16 is formed in substantially the same meander shape, and each magnetoresistive effect element 13-16 and each electrode 20-24 are arrange | positioned like FIG. Thereby, the extension length to each electrode 20-24 of front-end | tip part 13a, 13b-16a, 16b of each magnetoresistive effect element 13-16 can be made substantially the same. Therefore, the element lengths of the magnetoresistive effect elements 13 to 16 can be easily matched and the midpoint potential of the bridge circuit can be easily adjusted with high accuracy. Moreover, the extension length of each front-end | tip part 13a, 16a-13b, 16b from the magnetoresistive effect elements 13-16 to each electrode 20-24 can be made small, and size reduction of the magnetic sensor 1 can be promoted more effectively.

なお図１に示す符号２２の電極がグランド電極で、符号２３，２４の電極が入力電極であってもよい。   The electrode 22 shown in FIG. 1 may be a ground electrode, and the electrodes 23 and 24 may be input electrodes.

１０ 磁気センサ
１１ 基板
１３，１４ 下側磁気抵抗効果素子
１５，１６ 上側磁気抵抗効果素子
１７ 絶縁中間層
１８ 保護層
２０，２１ 出力電極
２２ 入力電極
２３，２４ グランド電極
２５，３０，３１ 導電層
２６ 下側積層膜
２７ 上側積層膜
１８ａ，２９，３３ 凹部
４１ 反強磁性層
４２，４９ 固定磁性層
４３ 非磁性層
４４ フリー磁性層
４６，４８，５０，５２，５４ （固定磁性層を構成する）磁性層
４７，５１，５３ 非磁性中間層DESCRIPTION OF SYMBOLS 10 Magnetic sensor 11 Board | substrates 13 and 14 Lower magnetoresistive effect element 15 and 16 Upper magnetoresistive effect element 17 Insulating intermediate layer 18 Protective layer 20 and 21 Output electrode 22 Input electrode 23 and 24 Ground electrodes 25, 30, and 31 Conductive layer 26 Lower laminated film 27 Upper laminated film 18a, 29, 33 Recess 41 Antiferromagnetic layers 42, 49 Fixed magnetic layer 43 Nonmagnetic layer 44 Free magnetic layers 46, 48, 50, 52, 54 (constituting a fixed magnetic layer) Magnetic layers 47, 51, 53 Nonmagnetic intermediate layer

Claims (10)

磁気抵抗効果素子を備えた磁気センサであって、
同一基板に、下側磁気抵抗効果素子と、上側磁気抵抗効果素子とが絶縁中間層を介して積層され、
前記下側磁気抵抗効果素子及び前記上側磁気抵抗効果素子はともに、磁化方向が固定される固定磁性層と、前記固定磁性層に非磁性層を介して積層された外部磁場を受けて磁化方向が変動するフリー磁性層と、前記固定磁性層の前記非磁性層とは反対側の面に形成され、前記固定磁性層との間で磁場中熱処理により交換結合磁界を生じさせる反強磁性層と、を有する積層構造を備えており、
前記下側磁気抵抗効果素子及び前記上側磁気抵抗効果素子の少なくともどちらか一方の前記固定磁性層は、複数の磁性層と前記磁性層の間に介在する非磁性中間層との積層フェリ構造で構成されており、前記下側磁気抵抗効果素子を構成する固定磁性層と前記上側磁気抵抗効果素子を構成する固定磁性層の層構成が異なっており、
前記下側磁気抵抗効果素子を構成する前記固定磁性層の前記非磁性層との当接層の磁化方向と、前記上側磁気抵抗効果素子を構成する前記固定磁性層の前記非磁性層との当接層の磁化方向とが反平行になっており、
前記絶縁中間層は、第１の絶縁層、第２の絶縁層及び第３の絶縁層の積層構造で形成されることを特徴とする磁気センサ。A magnetic sensor comprising a magnetoresistive element,
On the same substrate, a lower magnetoresistive element and an upper magnetoresistive element are laminated via an insulating intermediate layer,
The lower magnetoresistive element and the upper magnetoresistive element both have a pinned magnetic layer whose magnetization direction is fixed, and an external magnetic field laminated on the pinned magnetic layer via a nonmagnetic layer so that the magnetization direction is A free magnetic layer that fluctuates, and an antiferromagnetic layer that is formed on the surface of the pinned magnetic layer opposite to the nonmagnetic layer and generates an exchange coupling magnetic field by heat treatment in a magnetic field between the pinned magnetic layer, A laminated structure having
The fixed magnetic layer of at least one of the lower magnetoresistive element and the upper magnetoresistive element is configured by a laminated ferrimagnetic structure including a plurality of magnetic layers and a nonmagnetic intermediate layer interposed between the magnetic layers. The pinned magnetic layer constituting the lower magnetoresistive element is different from the pinned magnetic layer constituting the upper magnetoresistive element,
The magnetization direction of the contact layer of the pinned magnetic layer constituting the lower magnetoresistive effect element with the nonmagnetic layer is matched with the nonmagnetic layer of the pinned magnetic layer constituting the upper magnetoresistive effect element. The magnetization direction of the contact layer is antiparallel,
2. The magnetic sensor according to claim 1, wherein the insulating intermediate layer is formed of a stacked structure of a first insulating layer, a second insulating layer, and a third insulating layer. 前記第１の絶縁層及び前記第３の絶縁層は、Ａｌ２Ｏ３層で形成され、前記第２の絶縁層は、ＳｉＯ２層又はＳｉＮ層で形成される請求項１記載の磁気センサ。The magnetic sensor according to claim 1, wherein the first insulating layer and the third insulating layer are formed of an Al 2 O 3 layer, and the second insulating layer is formed of a SiO 2 layer or a SiN layer. 前記第２の絶縁層の膜厚は５０００Å以上で２００００Å以下である請求項１又は２に記載の磁気センサ。  3. The magnetic sensor according to claim 1, wherein the thickness of the second insulating layer is not less than 5000 mm and not more than 20000 mm. 前記第２の絶縁層の膜厚は１００００Å以上で１５０００Å以下である請求項３記載の磁気センサ。  4. The magnetic sensor according to claim 3, wherein the thickness of the second insulating layer is not less than 10,000 mm and not more than 15000 mm. 前記下側磁気抵抗効果素子及び前記上側磁気抵抗効果素子がともに積層フェリ構造であり、
前記下側磁気抵抗効果素子及び前記上側磁気抵抗効果素子のどちらか一方の前記固定磁性層を構成する前記磁性層の数が奇数であり、他方の前記固定磁性層を構成する前記磁性層の数が偶数である請求項１ないし４のいずれか１項に記載の磁気センサ。The lower magnetoresistive element and the upper magnetoresistive element are both laminated ferrimagnetic structures,
The number of the magnetic layers constituting the fixed magnetic layer of either the lower magnetoresistive element or the upper magnetoresistive element is an odd number, and the number of the magnetic layers constituting the other fixed magnetic layer The magnetic sensor according to claim 1, wherein is an even number. 前記下側磁気抵抗効果素子及び前記上側磁気抵抗効果素子のどちらか一方の前記固定磁性層を構成する前記磁性層の数が３であり、他方の前記固定磁性層を構成する前記磁性層の数が２である請求項５記載の磁気センサ。  The number of the magnetic layers constituting the pinned magnetic layer of either the lower magnetoresistive element or the upper magnetoresistive element is 3, and the number of the magnetic layers constituting the other pinned magnetic layer The magnetic sensor according to claim 5, wherein 前記絶縁中間層の表面が平坦化処理されており、前記絶縁中間層の平坦化面上に前記上側磁気抵抗効果素子が形成されている請求項１ないし６のいずれか１項に記載の磁気センサ。  The magnetic sensor according to claim 1, wherein a surface of the insulating intermediate layer is flattened, and the upper magnetoresistive element is formed on the flattened surface of the insulating intermediate layer. . 前記基板の同一面内に、複数の前記下側磁気抵抗効果素子と、複数の前記上側磁気抵抗効果素子と、入力電極と、グランド電極と、第１の出力電極と、第２の出力電極とが形成され、前記下側磁気抵抗効果素子と前記上側磁気抵抗効果素子とが各電極に接続されてブリッジ回路を構成している請求項１ないし７のいずれか１項に記載の磁気センサ。  A plurality of lower magnetoresistive elements, a plurality of upper magnetoresistive elements, an input electrode, a ground electrode, a first output electrode, and a second output electrode on the same surface of the substrate; The magnetic sensor according to claim 1, wherein the lower magnetoresistive element and the upper magnetoresistive element are connected to each electrode to form a bridge circuit. 平面視にて、複数の前記下側磁気抵抗効果素子及び複数の前記上側磁気抵抗効果素子はＸ方向に並設されており、前記磁気抵抗効果素子を介して、前記Ｘ方向に直交するＹ方向の両側位置の一方に、前記入力電極と前記グランド電極とがＸ方向に並設され、他方に、前記第１の出力電極と、前記第２の出力電極とがＸ方向に並設されている請求項８記載の磁気センサ。  In plan view, the plurality of lower magnetoresistive elements and the plurality of upper magnetoresistive elements are juxtaposed in the X direction, and the Y direction is orthogonal to the X direction via the magnetoresistive elements. The input electrode and the ground electrode are arranged in parallel in the X direction at one of the two side positions, and the first output electrode and the second output electrode are arranged in parallel in the X direction on the other side. The magnetic sensor according to claim 8. 磁気抵抗効果素子を備えた磁気センサであって、
同一基板に、下側磁気抵抗効果素子と、上側磁気抵抗効果素子とが絶縁中間層を介して積層され、
前記下側磁気抵抗効果素子及び前記上側磁気抵抗効果素子はともに、磁化方向が固定される固定磁性層と、前記固定磁性層に非磁性層を介して積層された外部磁場を受けて磁化方向が変動するフリー磁性層と、前記固定磁性層の前記非磁性層とは反対側の面に形成され、前記固定磁性層との間で磁場中熱処理により交換結合磁界を生じさせる反強磁性層と、を有する積層構造を備えており、
前記下側磁気抵抗効果素子及び前記上側磁気抵抗効果素子の少なくともどちらか一方の前記固定磁性層は、複数の磁性層と前記磁性層の間に介在する非磁性中間層との積層フェリ構造で構成されており、前記下側磁気抵抗効果素子を構成する固定磁性層と前記上側磁気抵抗効果素子を構成する固定磁性層の層構成が異なっており、
前記下側磁気抵抗効果素子を構成する前記固定磁性層の前記非磁性層との当接層の磁化方向と、前記上側磁気抵抗効果素子を構成する前記固定磁性層の前記非磁性層との当接層の磁化方向とが反平行になっており、
前記下側磁気抵抗効果素子及び前記上側磁気抵抗効果素子の双方と接続される電極は、前記下側磁気抵抗効果素子から延出して形成された前記下側磁気抵抗効果素子と同じ層構成の下側積層膜及び前記上側磁気抵抗効果素子から延出して形成された前記上側磁気抵抗効果素子と同じ層構成の上側積層膜が前記絶縁中間層を介して積層された積層部を有し、前記電極には、前記上側積層膜の側面から前記下側積層膜まで露出する凹部が設けられ、前記凹部内に埋め込まれた導電層と、前記上側積層膜及び前記下側積層膜とが電気的に接続されていることを特徴とする磁気センサ。A magnetic sensor comprising a magnetoresistive element,
On the same substrate, a lower magnetoresistive element and an upper magnetoresistive element are laminated via an insulating intermediate layer,
The lower magnetoresistive element and the upper magnetoresistive element both have a pinned magnetic layer whose magnetization direction is fixed, and an external magnetic field laminated on the pinned magnetic layer via a nonmagnetic layer so that the magnetization direction is A free magnetic layer that fluctuates, and an antiferromagnetic layer that is formed on the surface of the pinned magnetic layer opposite to the nonmagnetic layer and generates an exchange coupling magnetic field by heat treatment in a magnetic field between the pinned magnetic layer, A laminated structure having
The fixed magnetic layer of at least one of the lower magnetoresistive element and the upper magnetoresistive element is configured by a laminated ferrimagnetic structure including a plurality of magnetic layers and a nonmagnetic intermediate layer interposed between the magnetic layers. The pinned magnetic layer constituting the lower magnetoresistive element is different from the pinned magnetic layer constituting the upper magnetoresistive element,
The magnetization direction of the contact layer of the pinned magnetic layer constituting the lower magnetoresistive effect element with the nonmagnetic layer is matched with the nonmagnetic layer of the pinned magnetic layer constituting the upper magnetoresistive effect element. The magnetization direction of the contact layer is antiparallel,
The electrodes connected to both the lower magnetoresistive element and the upper magnetoresistive element have the same layer configuration as the lower magnetoresistive element formed to extend from the lower magnetoresistive element. A side laminated film and an upper laminated film having the same layer configuration as that of the upper magnetoresistive effect element formed by extending from the upper magnetoresistive effect element, and having a laminated portion laminated via the insulating intermediate layer, Is provided with a recessed portion exposed from the side surface of the upper laminated film to the lower laminated film, and the conductive layer embedded in the recessed portion is electrically connected to the upper laminated film and the lower laminated film. Magnetic sensor characterized by being made.
JP2011510288A 2009-04-22 2010-04-13 Magnetic sensor Active JP5223001B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011510288A JP5223001B2 (en) 2009-04-22 2010-04-13 Magnetic sensor

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2009103737 2009-04-22
JP2009103737 2009-04-22
JP2011510288A JP5223001B2 (en) 2009-04-22 2010-04-13 Magnetic sensor
PCT/JP2010/056564 WO2010122919A1 (en) 2009-04-22 2010-04-13 Magnetic sensor

Publications (2)

Publication Number Publication Date
JPWO2010122919A1 JPWO2010122919A1 (en) 2012-10-25
JP5223001B2 true JP5223001B2 (en) 2013-06-26

Family

ID=43011037

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011510288A Active JP5223001B2 (en) 2009-04-22 2010-04-13 Magnetic sensor

Country Status (2)

Country Link
JP (1) JP5223001B2 (en)
WO (1) WO2010122919A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102279373B (en) * 2011-07-13 2013-06-12 中国人民解放军国防科学技术大学 Uniaxially electrostatic-driven sensor for weak magnetic field measurement
JP5809478B2 (en) * 2011-08-02 2015-11-11 アルプス電気株式会社 Magnetic sensor
EP2788780A1 (en) * 2011-12-05 2014-10-15 Advanced Microsensors Corporation Magnetic field sensing apparatus and methods

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09283816A (en) * 1996-04-08 1997-10-31 Fujitsu Ltd Magnetoresistive sensor for sensing magnetic field
JP2007064695A (en) * 2005-08-29 2007-03-15 Yamaha Corp Magnetic sensor using giant magneto-resistive device, and method for manufacturing the same magnetic sensor
WO2009031539A1 (en) * 2007-09-03 2009-03-12 Alps Electric Co., Ltd. Magnetic detecting device
JP2009064528A (en) * 2007-09-07 2009-03-26 Hitachi Ltd Magnetoresistance effect head and manufacturing method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09283816A (en) * 1996-04-08 1997-10-31 Fujitsu Ltd Magnetoresistive sensor for sensing magnetic field
JP2007064695A (en) * 2005-08-29 2007-03-15 Yamaha Corp Magnetic sensor using giant magneto-resistive device, and method for manufacturing the same magnetic sensor
WO2009031539A1 (en) * 2007-09-03 2009-03-12 Alps Electric Co., Ltd. Magnetic detecting device
JP2009064528A (en) * 2007-09-07 2009-03-26 Hitachi Ltd Magnetoresistance effect head and manufacturing method thereof

Also Published As

Publication number Publication date
JPWO2010122919A1 (en) 2012-10-25
WO2010122919A1 (en) 2010-10-28

Similar Documents

Publication Publication Date Title
JP5066579B2 (en) Magnetic sensor and magnetic sensor module
JP5021764B2 (en) Magnetic sensor
JP5174911B2 (en) Magnetic sensor and magnetic sensor module
US9182458B2 (en) Magnetoresistive sensing device
JP5686635B2 (en) Magnetic sensor and manufacturing method thereof
JP6296155B2 (en) Anisotropic magnetoresistive element, magnetic sensor and current sensor
TWI443360B (en) Magnetic sensor and fabricating method thereof
WO2009151024A1 (en) Magnetic sensor and magnetic sensor module
JP5066581B2 (en) Magnetic sensor and magnetic sensor module
WO2009151023A1 (en) Magnetic sensor and magnetic sensor module
JP5802565B2 (en) Magnetic sensor
JP5223001B2 (en) Magnetic sensor
JP5066525B2 (en) Magnetic detection device and manufacturing method thereof
JP4689516B2 (en) Magnetic detector
JP6506604B2 (en) Magnetic sensor
JP5265689B2 (en) Magnetically coupled isolator
JP2017040628A (en) Magnetic sensor
JP5284288B2 (en) Magnetic sensor and manufacturing method thereof
WO2010137606A1 (en) Magnetic sensor
US20140347047A1 (en) Magnetoresistive sensor
JP5000665B2 (en) Magnetic detection device and manufacturing method thereof
JP2009302279A (en) Method of manufacturing magnetic sensor
WO2011111458A1 (en) Magnetic sensor
JP2018101735A (en) Method of manufacturing magnetoresistance effect element and magnetoresistance effect element
JP2018152452A (en) Magnetic sensor

Legal Events

Date Code Title Description
TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130305

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130311

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20160315

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 5223001

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350