JP5211887B2 - Semiconductor light emitting device and manufacturing method thereof - Google Patents
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Description
本発明は、半導体発光素子およびその製造方法に関するものである。 The present invention relates to a semiconductor light emitting device and a method for manufacturing the same.
半導体発光素子においては、複数の半導体層で構成される多層構造の半導体発光部の上に、半導体層に電流を供給するための電極と、その電極を周囲から電気的に絶縁するための絶縁膜とを、それぞれ設ける場合がある。この場合、電極は、半導体発光部からの光を反射して、光取り出し効率を高めるために、Ａｇ、Ａｌ等で形成される。そして、この半導体発光素子は、接合用基板に貼り合わせたり、支持基板に実装したりする場合がある。 In a semiconductor light emitting device, an electrode for supplying current to the semiconductor layer and an insulating film for electrically insulating the electrode from the surroundings on the semiconductor light emitting portion having a multilayer structure composed of a plurality of semiconductor layers May be provided respectively. In this case, the electrode is formed of Ag, Al, or the like in order to reflect light from the semiconductor light emitting unit and increase light extraction efficiency. And this semiconductor light-emitting device may be bonded to a bonding substrate or mounted on a support substrate.
そして、この貼合せや実装の際に、接合用基板や支持基板と接合するために加熱処理が施される。また、半導体層の上に電極と絶縁膜とを有する場合、電極の一部を覆うように絶縁膜が延在するように形成したり、あるいは絶縁膜の一部まで電極が延在するように形成したりすることが行われる。特に、ＡｇやＡｌは、マイグレーションを起こしやすい材料であるので、絶縁膜が電極の一部を覆うように形成されることが多い。例えば、特許文献１には、電極の上を覆うように、絶縁性薄膜を積層した構造が開示されている。また、特許文献２には、ｐ側電極を構成するＡｇ含有の第１金属層を被覆する保護膜を有する構造が開示されている。さらに、特許文献３には、絶縁膜の外周に電極が密着して形成された構造が開示されている。
貼合せや実装に際して、高温で加熱処理することで充分な密着性が得られるが、高温であるほどＳｉＯ２等からなる絶縁膜に熱膨張に起因すると思われるひび割れや欠けが発生することがある。またこれらの構造では、電極は、半導体発光素子の動作発光時の放熱経路となり、必然的に高温状態になり得る部位である。そして、ひび割れや欠けが発生すると、この部分を通って電極を構成するＡｇやＡｌのマイグレーションが発生し、素子のリークや破壊を引き起こすことがある。また、ウエハから素子を分離してチップ化する場合に、絶縁膜がひび割れすることもある。 When bonding and mounting, sufficient adhesion can be obtained by heat treatment at a high temperature, but cracking or chipping that may be caused by thermal expansion may occur in the insulating film made of SiO 2 or the like at a higher temperature. . In these structures, the electrode serves as a heat dissipation path during operation light emission of the semiconductor light emitting element, and is necessarily a part that can be in a high temperature state. When cracks or chips occur, migration of Ag or Al constituting the electrode through this portion may occur, causing leakage or destruction of the element. In addition, when an element is separated from a wafer to form a chip, the insulating film may crack.
そこで、本発明は、電極からの電流リークや素子の破壊を引き起こすことがなく、光取り出し効率にも優れた半導体発光素子およびその製造方法を提供することにある。 Accordingly, an object of the present invention is to provide a semiconductor light emitting device that does not cause current leakage from an electrode or breaks down the device, and has excellent light extraction efficiency, and a method for manufacturing the same.
前記課題を解決するため、請求項１に係る発明は、第１導電型半導体層と、第２導電型半導体層と、第１導電型半導体層と第２導電型半導体層の間に介設された発光層とを有する半導体発光部と、前記第１導電型半導体層に接続される第１導電側電極と、前記第２導電型半導体層に接続される第２導電側電極とを備える半導体発光素子であって、前記半導体発光部を挟んで、前記第１導電側電極が前記第１導電型半導体層の外側に設けられ、前記第２導電側電極が前記第２導電側半導体層の外側に設けられ、前記半導体発光部を平面視して前記第１導電側電極と前記第２導電側電極とが交互に配置され、前記第２導電側電極と、前記半導体発光部を被覆する絶縁膜とが、離間領域を介して離間して配設され、前記第２導電側電極および前記絶縁膜の外側に金属材料または合金材料からなる連続層が設けられ、前記離間領域には、空隙または前記金属材料または合金材料からなる層が設けられていることを特徴とする。 In order to solve the above-mentioned problem, the invention according to claim 1 is provided between the first conductive semiconductor layer, the second conductive semiconductor layer, and the first conductive semiconductor layer and the second conductive semiconductor layer. A semiconductor light emitting device comprising: a semiconductor light emitting portion having a light emitting layer; a first conductive side electrode connected to the first conductive type semiconductor layer; and a second conductive side electrode connected to the second conductive type semiconductor layer. An element , wherein the first conductive side electrode is provided outside the first conductive type semiconductor layer, and the second conductive side electrode is provided outside the second conductive side semiconductor layer with the semiconductor light emitting portion interposed therebetween. The first conductive side electrode and the second conductive side electrode are alternately disposed in a plan view of the semiconductor light emitting unit, and the second conductive side electrode and an insulating film covering the semiconductor light emitting unit; Are spaced apart via a spacing region, the second conductive side electrode and the insulation Continuous layer of a metallic material or an alloy material is provided on the outside of the membrane, the separation region is characterized by a layer consisting of voids or the metal material or alloy material is provided.
この半導体発光素子では、第２導電側電極が、半導体発光部を被覆する絶縁膜と、離間領域を介して離間して配設されていることによって、素子のリークや破壊を引き起こすことがなく、また、電極によって、半導体発光部からの光を良好に反射するため高い光取り出し効率を得ることができる。また、この半導体発光素子では、第１導電側電極と、第２導電側電極とが、半導体発光部を挟んで、半導体発光部を平面視して前記第１導電側電極と前記第２導電側電極とが交互に配置されていることによって、第１導電側電極と、第２導電側電極との間を流れる電流が、半導体素子構造を最短で流れることがなく、半導体発光部の発光層における発光が比較的均一になり、光取り出し効率の向上に有効である。さらに、この半導体発光素子では、空隙または前記金属材料または合金材料からなる層で構成される離間領域によって、第２導電側電極が、絶縁膜と離間され、素子のリークや破壊を引き起こすことがない。 In this semiconductor light emitting device, the second conductive side electrode is disposed apart from the insulating film covering the semiconductor light emitting portion via the separation region, so that the device does not leak or break down, Moreover, since the light from a semiconductor light-emitting part is reflected favorably by an electrode, high light extraction efficiency can be obtained. Further, in this semiconductor light emitting device, the first conductive side electrode and the second conductive side electrode have the first conductive side electrode and the second conductive side in plan view of the semiconductor light emitting unit with the semiconductor light emitting unit interposed therebetween. By alternately arranging the electrodes, the current flowing between the first conductive side electrode and the second conductive side electrode does not flow through the semiconductor element structure in the shortest time, and in the light emitting layer of the semiconductor light emitting unit Light emission becomes relatively uniform, which is effective for improving light extraction efficiency. Further, in this semiconductor light emitting device, the second conductive side electrode is separated from the insulating film by the gap or the separated region constituted by the layer made of the metal material or the alloy material, so that the device is not leaked or broken. .
請求項２に係る発明は、前記の半導体発光素子において、前記第２導電側電極および前記絶縁膜の外側に基板が設けられていることを特徴とする。 The invention according to claim 2 is characterized in that, in the semiconductor light emitting device, a substrate is provided outside the second conductive side electrode and the insulating film.
この半導体発光素子では、第２導電側電極および絶縁膜の外側に基板が設けられている構成において、基板側での素子のリークや破壊を引き起こすことがない。 In this semiconductor light emitting device, in the configuration in which the substrate is provided outside the second conductive side electrode and the insulating film, the device does not leak or break on the substrate side.
請求項３に係る発明は、前記半導体発光部を平面視して、前記第２導電側電極の面積が、前記第１導電側電極の面積よりも大きいことを特徴とする。 The invention according to claim 3 is characterized in that the area of the second conductive side electrode is larger than the area of the first conductive side electrode in a plan view of the semiconductor light emitting unit.
この半導体発光素子では、半導体発光部を平面視して、前記第２導電側電極の面積を、前記第１導電側電極の面積よりも大きくすることによって、電流注入領域の面積を大きくでき、発光効率が向上するとともに、発光による熱の放熱性も向上する。特に、実装側に前記第２導電側電極を配設する場合に有効である。 In this semiconductor light emitting device, the area of the second conductive side electrode is made larger than the area of the first conductive side electrode in a plan view of the semiconductor light emitting unit, whereby the area of the current injection region can be increased, and light emission The efficiency is improved, and the heat dissipation by heat is also improved. This is particularly effective when the second conductive side electrode is disposed on the mounting side.
請求項４に係る発明は、前記の半導体発光素子において、前記第２導電側電極が、光反射性金属材料で形成されていることを特徴とする。 The invention according to claim 4 is characterized in that, in the semiconductor light emitting device, the second conductive side electrode is formed of a light reflective metal material.
この半導体発光素子では、第２導電側電極を光反射性金属材料で形成することによって、光取り出し効率を向上させることができる。 In this semiconductor light emitting device, the light extraction efficiency can be improved by forming the second conductive side electrode with a light reflective metal material.
請求項５に係る発明は、前記の半導体発光素子において、前記光反射性金属材料が、Ａｇ、ＡｌおよびＲｈから選ばれる少なくとも１種であることを特徴とする。 The invention according to claim 5 is characterized in that, in the semiconductor light emitting device, the light reflective metal material is at least one selected from Ag, Al and Rh.
この半導体発光素子では、第２導電側電極を形成する光反射性金属材料としてＡｇ、ＡｌおよびＲｈから選ばれる少なくとも１種が好ましい。Ａｇ、ＡｌおよびＲｈから選ばれる少なくとも１種で形成された第２導電側電極が、離間領域を介して、絶縁膜と離間して配設されていることによって、これらのＡｇ、ＡｌおよびＲｈから選ばれる少なくとも１種のマイグレーションによる素子のリークや破壊を防止することができる。 In this semiconductor light emitting device, at least one selected from Ag, Al, and Rh is preferable as the light reflective metal material for forming the second conductive side electrode. The second conductive side electrode formed of at least one selected from Ag, Al, and Rh is disposed apart from the insulating film via the separation region, so that the Ag, Al, and Rh are separated from each other. It is possible to prevent leakage and destruction of the element due to at least one selected migration.
請求項６に係る発明は、前記半導体発光素子の製造方法において、第１導電型半導体層と、第２導電型半導体層と、第１導電型半導体層と第２導電型半導体層の間に介設された発光層とを有する半導体発光部を形成する工程１と、前記第１導電型半導体層に接続される第１導電側電極を形成する工程２と、前記第２導電型半導体層に接続される第２導電側電極を形成する工程３と、前記第２導電側電極と、前記半導体発光部を被覆する絶縁膜とを、離間領域を介して離間して形成する工程４と、前記第２導電側電極および前記絶縁膜の外側に金属材料または合金材料からなる連続層が形成され、前記離間領域には、空隙または前記金属材料または合金材料からなる層が形成される工程と、を含み、前記工程２及び前記工程３において、前記半導体発光部を挟んで、前記第１導電側電極が前記第１導電型半導体層の外側に設けられ、前記第２導電側電極が前記第２導電側半導体層の外側に設けられ、前記半導体発光部を平面視して前記第１導電側電極と前記第２導電側電極とが交互に配置されることを特徴とする。 According to a sixth aspect of the present invention, in the method for manufacturing a semiconductor light emitting device, the first conductive type semiconductor layer, the second conductive type semiconductor layer, and the first conductive type semiconductor layer and the second conductive type semiconductor layer are interposed. Forming a semiconductor light emitting portion having a light emitting layer provided; forming a first conductive side electrode connected to the first conductive type semiconductor layer; and connecting to the second conductive type semiconductor layer. Forming a second conductive side electrode to be formed, step 4 forming the second conductive side electrode, and an insulating film covering the semiconductor light emitting part with a separation region therebetween, and And a step of forming a continuous layer made of a metal material or an alloy material outside the conductive side electrode and the insulating film, and forming a gap or a layer made of the metal material or the alloy material in the separated region. In the step 2 and the step 3, the half The first conductive side electrode is provided outside the first conductive type semiconductor layer, the second conductive side electrode is provided outside the second conductive side semiconductor layer, and the semiconductor light emission The first conductive side electrodes and the second conductive side electrodes are alternately arranged in plan view .
この半導体発光素子の製造方法では、第１導電型半導体層と、第２導電型半導体層と、第１導電型半導体層と第２導電型半導体層の間に介設された発光層とを有する半導体発光部を形成する工程１と、前記第１導電型半導体層に接続される第１導電側電極を形成する工程２と、前記第２導電型半導体層に接続される第２導電側電極を形成する工程３と、前記第２導電側電極と、前記半導体発光部を被覆する絶縁膜とを、離間領域を介して離間して形成する工程４と、によって、素子のリークや破壊を引き起こすことがなく、また、電極によって、半導体発光部からの光を良好に反射するため高い光取り出し効率を示す半導体発光素子を得ることができる。 In this method of manufacturing a semiconductor light emitting device, the semiconductor device includes a first conductive semiconductor layer, a second conductive semiconductor layer, and a light emitting layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer. Step 1 for forming a semiconductor light emitting part, Step 2 for forming a first conductive side electrode connected to the first conductive type semiconductor layer, and a second conductive side electrode connected to the second conductive type semiconductor layer The step 3 of forming, and the step 4 of forming the second conductive side electrode and the insulating film covering the semiconductor light emitting portion apart through the separation region cause leakage or destruction of the element. In addition, since the electrode reflects the light from the semiconductor light emitting part well, a semiconductor light emitting device exhibiting high light extraction efficiency can be obtained.
本発明の半導体発光素子は、第２導電側電極が、絶縁膜と、離間領域を介して離間して配設されているため、半導体発光素子の動作発光時に高温状態となる電極から、接合や実装時の高温での加熱処理による熱膨張に起因して形成され易い絶縁膜のひび割れや欠けを通ってマイグレーションが発生するのを防止し、素子のリークや破壊を防止する。そして、マイグレーションの発生を防止することができるため、マイグレーションを起こし易いＡｇやＡｌ等を電極材料とすることができ、これらのＡｇやＡｌ等からなる電極によって、半導体発光部からの光を良好に反射することができるため高い光取り出し効率を得ることが可能となる。 In the semiconductor light emitting device of the present invention, the second conductive side electrode is disposed apart from the insulating film via the separation region. Migration is prevented from occurring through cracks and chips of an insulating film that is easily formed due to thermal expansion due to heat treatment at a high temperature during mounting, thereby preventing element leakage and destruction. And since generation | occurrence | production of migration can be prevented, Ag, Al, etc. which are easy to raise | generate migration can be used as an electrode material, and the light from a semiconductor light-emitting part is favorably by these electrodes which consist of Ag, Al, etc. Since the light can be reflected, high light extraction efficiency can be obtained.
また、本発明の製造方法によれば、素子のリークや破壊を引き起こすことがなく、また、電極によって、半導体発光部からの光を良好に反射するため高い光取り出し効率を示す半導体発光素子を得ることができる。 In addition, according to the manufacturing method of the present invention, there is obtained a semiconductor light emitting device that does not cause leakage or destruction of the device, and shows high light extraction efficiency because the electrode reflects the light from the semiconductor light emitting portion well. be able to.
以下、本発明の半導体発光素子およびその製造方法について詳細に説明する。
図１は、本発明の実施形態に係る半導体発光素子１の構造を示す模式断面図である。
Hereinafter, the semiconductor light-emitting device of the present invention and the manufacturing method thereof will be described in detail.
FIG. 1 is a schematic cross-sectional view showing the structure of a semiconductor light emitting device 1 according to an embodiment of the present invention.
図１に示す半導体発光素子１は、第１導電型半導体層２と、第２導電型半導体層３と、第１導電型半導体層２と第２導電型半導体層３の間に介設された発光層４とを有する半導体発光部５を備え、第１導電型半導体層２に接続される第１導電側電極６と、第２導電型半導体層３に接続される第２導電側電極７とを備える構造を有するものである。また、第２導電型半導体層３には、第２導電側電極７と離間して絶縁膜１１ｂが設けられ、さらに、第２導電側電極７と絶縁膜１１ｂの下面には、これらに接するとともに、連続して金属材料または合金材料からなる連続層（以下、「メタライズ層」という）８を備え、さらにまた、下面に基板９および裏面メタライズ層１０を備えている。また、１１ｃは、絶縁膜であり、半導体発光部５の側面で絶縁膜１１ｂと連絡している。 A semiconductor light emitting device 1 shown in FIG. 1 is interposed between a first conductive semiconductor layer 2, a second conductive semiconductor layer 3, and between the first conductive semiconductor layer 2 and the second conductive semiconductor layer 3. A semiconductor light emitting section 5 having a light emitting layer 4, a first conductive side electrode 6 connected to the first conductive type semiconductor layer 2, a second conductive side electrode 7 connected to the second conductive type semiconductor layer 3, and It has a structure provided with. The second conductive semiconductor layer 3 is provided with an insulating film 11b spaced from the second conductive side electrode 7, and the lower surfaces of the second conductive side electrode 7 and the insulating film 11b are in contact with these. Further, a continuous layer (hereinafter referred to as “metallized layer”) 8 made of a metal material or an alloy material is provided, and a substrate 9 and a back metallized layer 10 are provided on the lower surface. Reference numeral 11 c denotes an insulating film that communicates with the insulating film 11 b on the side surface of the semiconductor light emitting unit 5.
半導体発光部５を構成する第１導電型半導体層２と、第２導電型半導体層３とは、半導体材料からなる層にドーパントをドープして、ｎ型またはｐ型の半導体層を形成する。この第１導電型半導体層２および第２導電型半導体層３を構成する半導体材料の具体例としては、ＧａＮ、ＡｌＮ、もしくはＩｎＮ、又はこれらの混晶であるＩＩＩ−Ｖ族窒化物半導体（ＩｎαＡｌβＧａ１−α−βＮ、０≦α、０≦β、α＋β≦１）、ＩＩＩ族元素として一部若しくは全部にＢなどを用いたり、Ｖ族元素としてＮの一部をＰ、Ａｓ、Ｓｂなどで置換した混晶、ＡｌＧａＡｓ、ＩｎＧａＡｓ等のＧａＡｓ系材料、ＡｌＧａＩｎＰ等のＩｎＰ系材料、これらの混晶であるＩｎＧａＡｓＰ等の他のIII−Ｖ族化合物半導体などが挙げられる。また、半導体材料にドープされるドーパントとしては、ｎ型ドーパントとして、Ｓｉ、Ｇｅ、Ｓｎ、Ｓ、Ｏ、Ｔｉ、Ｚｒ等のＩＶ族、若しくはＶＩ族元素、ｐ型ドーパントとして、Ｂｅ、Ｚｎ、Ｍｎ、Ｃｒ、Ｍｇ、Ｃａなどが挙げられる。第１導電型半導体層２とおよび第２導電型半導体層３を窒化物半導体材料で構成する場合には、第１導電側電極６または第２導電側電極７との接触抵抗を低くすることができる点で、Ｓｉを含むＧａＮ、Ｍｇを含んだＧａＮが最も好ましい。また、この第１導電型半導体層２および第２導電型半導体層３の膜厚は、発光層４を合わせた半導体発光部５の総膜厚として、１０００ｎｍ〜５０００ｎｍ程度である。 The first conductivity type semiconductor layer 2 and the second conductivity type semiconductor layer 3 constituting the semiconductor light emitting unit 5 are doped with a dopant in a layer made of a semiconductor material to form an n-type or p-type semiconductor layer. Specific examples of the semiconductor material constituting the first conductivity type semiconductor layer 2 and the second conductivity type semiconductor layer 3 include a group III-V nitride semiconductor (InαAlβGa1) that is GaN, AlN, InN, or a mixed crystal thereof. -Α-βN, 0 ≦ α, 0 ≦ β, α + β ≦ 1), part or all of B is used as a group III element, or part of N is replaced by P, As, Sb, etc. as a group V element Examples thereof include mixed crystals, GaAs-based materials such as AlGaAs and InGaAs, InP-based materials such as AlGaInP, and other III-V group compound semiconductors such as InGaAsP which are mixed crystals thereof. In addition, dopants doped into semiconductor materials include n-type dopants such as Si, Ge, Sn, S, O, Ti, and Zr group IV or VI elements, and p-type dopants such as Be, Zn, and Mn. , Cr, Mg, Ca and the like. When the first conductive type semiconductor layer 2 and the second conductive type semiconductor layer 3 are made of a nitride semiconductor material, the contact resistance with the first conductive side electrode 6 or the second conductive side electrode 7 can be lowered. In view of the capability, GaN containing Si and GaN containing Mg are most preferable. Further, the film thickness of the first conductive semiconductor layer 2 and the second conductive semiconductor layer 3 is about 1000 nm to 5000 nm as the total film thickness of the semiconductor light emitting unit 5 including the light emitting layer 4.
また、これらの第１導電型半導体層２および第２導電型半導体層３は、それぞれ多層構造に形成されていてもよい。例えば、第１導電型半導体層２は、第１導電側電極６の側から、コンタクト層、クラッド層の順に積層された多層構造を有していてもよい。また、第２導電型半導体層３は、第２導電側電極７の側からコンタクト層、クラッド層の順に積層された多層構造を有していてもよい。また、第１導電型半導体層２および第２導電型半導体層３が多層構造を有する場合、多層構造は、アンドープの半導体材料で形成された層と、ドープされた半導体材料で形成された層とを交互に積層して構成されていてもよい。 The first conductive semiconductor layer 2 and the second conductive semiconductor layer 3 may each be formed in a multilayer structure. For example, the first conductivity type semiconductor layer 2 may have a multilayer structure in which a contact layer and a cladding layer are laminated in this order from the first conductivity side electrode 6 side. The second conductivity type semiconductor layer 3 may have a multilayer structure in which a contact layer and a cladding layer are laminated in this order from the second conductivity side electrode 7 side. When the first conductive semiconductor layer 2 and the second conductive semiconductor layer 3 have a multilayer structure, the multilayer structure includes a layer formed of an undoped semiconductor material, a layer formed of a doped semiconductor material, May be alternately stacked.
また、発光層４は、ｎ型またはｐ型の半導体層である、第１導電型半導体層２と、第２導電型半導体層３とから注入される電子および正孔の再結合によって生成するエネルギを光として放出するものである。 The light emitting layer 4 is energy generated by recombination of electrons and holes injected from the first conductive semiconductor layer 2 and the second conductive semiconductor layer 3 which are n-type or p-type semiconductor layers. Is emitted as light.
この発光層４は、井戸層と障壁層とを含む量子井戸構造を有するものが好ましい。また、この発光層４を構成する半導体材料は、ノンドープ、ｎ型不純物ドープ、ｐ型不純物ドープのいずれのものでもよい。なかでも、ノンドープまたはｎ型不純物ドープの半導体材料で形成されることが好ましい。さらに、例えば、井戸層をアンドープとし、障壁層をｎ型不純物ドープとしてもよい。さらにまた、井戸層の組成を変えるか、井戸層にドープするドーパントの種類およびドープ量を選択することによって、半導体発光素子の目的、用途等に応じて発光層４で生成する光の波長を調整することができる。例えば、窒化物半導体からなる発光層４では、６０ｎｍ〜６５０ｎｍ付近、好ましくは３８０ｎｍ〜５６０ｎｍの波長の光を発光することができるが、井戸層にＡｌを含有することによって、従来のＩｎＧａＮの井戸層では困難な波長域、具体的には、ＧａＮのバンドギャップエネルギーである波長３６５ｎｍ付近、もしくはそれより短い波長の光を得ることができる。 The light emitting layer 4 preferably has a quantum well structure including a well layer and a barrier layer. The semiconductor material constituting the light emitting layer 4 may be any of non-doped, n-type impurity doped, and p-type impurity doped. Especially, it is preferable to form with a semiconductor material of non-doped or n-type impurity doping. Furthermore, for example, the well layer may be undoped and the barrier layer may be n-type impurity doped. Furthermore, the wavelength of light generated in the light-emitting layer 4 is adjusted according to the purpose and application of the semiconductor light-emitting device by changing the composition of the well layer or selecting the type and amount of dopant doped into the well layer. can do. For example, the light emitting layer 4 made of a nitride semiconductor can emit light having a wavelength of about 60 nm to about 650 nm, preferably 380 nm to 560 nm. However, by containing Al in the well layer, a conventional InGaN well layer can be used. Thus, it is possible to obtain light in a difficult wavelength range, specifically, in the vicinity of a wavelength of 365 nm which is the band gap energy of GaN or shorter.
また、メタライズ層８は、基板９と第２導電側電極７および絶縁膜１１ｂとを接合するとともに、基板９を介して、第２導電側電極７と裏面メタライズ層１０とを電気的に接続するためのものである。このメタライズ層８は、金属材料または合金材料からなる連続層として形成される。本発明において、連続層とは、少なくとも第２導電側電極７および絶縁膜１１ｂと接合するように連続して設けられた層であり、さらには、例えば、図１に示すように、半導体発光部５とほぼ同じ大きさで、第２導電側電極７および絶縁膜１１ｂとに接合された層である。 The metallized layer 8 joins the substrate 9 to the second conductive side electrode 7 and the insulating film 11b, and electrically connects the second conductive side electrode 7 and the back surface metallized layer 10 via the substrate 9. Is for. The metallized layer 8 is formed as a continuous layer made of a metal material or an alloy material. In the present invention, the continuous layer is a layer continuously provided so as to be bonded to at least the second conductive side electrode 7 and the insulating film 11b. Further, for example, as shown in FIG. 5 is a layer having the same size as 5 and bonded to the second conductive side electrode 7 and the insulating film 11b.
メタライズ層８および裏面メタライズ層１０は、基板等との貼り合わせや実装に際して、第２導電側電極７と、さらに絶縁膜１１ｂと、基板等に接合するための接合層を構成する。このメタライズ層は、少なくともＳｎ、Ｐｂなどの低融点材料を含み、Ｔｉ、Ｐｔ、Ａｕ、Ｓｎ、Ａｕ、Ａｇ、Ｃｕ、Ｂｉ、Ｐｂ、Ｚｎ等の金属材料およびこれらの合金で形成される。例えば、メタライズ層８は、Ｔｉ（１００ｎｍ）／Ｐｔ（１００ｎｍ）／Ａｕ（３００ｎｍ）／Ｓｎ（３０００ｎｍ）／Ａｕ（１００ｎｍ）の順に合計膜厚３６００ｎｍで成膜して構成することができる。また、裏面メタライズ層１０は、膜厚６００ｎｍ程度に形成される。 The metallized layer 8 and the back surface metallized layer 10 constitute a bonding layer for bonding to the second conductive side electrode 7, the insulating film 11b, and the substrate or the like when the substrate is bonded or mounted. The metallized layer includes at least a low melting point material such as Sn or Pb, and is formed of a metal material such as Ti, Pt, Au, Sn, Au, Ag, Cu, Bi, Pb, Zn, or an alloy thereof. For example, the metallized layer 8 can be formed by forming a total film thickness of 3600 nm in the order of Ti (100 nm) / Pt (100 nm) / Au (300 nm) / Sn (3000 nm) / Au (100 nm). Further, the back metallized layer 10 is formed to a thickness of about 600 nm.
基板９は、通常、シリコン(Ｓｉ)で構成される。なお、Ｓｉのほか、例えば、Ｇｅ、ＳｉＣ、ＧａＮ、ＧａＡｓ、ＧａＰ、ＩｎＰ、ＺｎＳｅ、ＺｎＳ、ＺｎＯ等の半導体からなる半導体基板、金属単体基板、または、相互に非固溶あるいは半固溶限界の小さい２種以上の金属の複合体からなる金属基板を用いることができる。金属単体基板としては、例えば、Ｃｕ基板が、また、金属基板の材料としては、例えば、Ａｇ、Ｃｕ、Ａｕ、Ｐｔ等の高導電性金属から選ばれる少なくとも１種以上の金属と、Ｗ、Ｍｏ、Ｃｒ、Ｎｉ等の高硬度の金属から選ばれる少なくとも１種以上の金属と、からなるものを用いることができる。半導体材料からなる基板を用いる場合には、素子機能、例えば、ツェナーダイオードを付加した基板とすることもできる。さらに、金属基板として、Ｃｕ−ＷあるいはＣｕ−Ｍｏの複合体を用いることもできる。 The substrate 9 is usually made of silicon (Si). In addition to Si, for example, a semiconductor substrate made of a semiconductor such as Ge, SiC, GaN, GaAs, GaP, InP, ZnSe, ZnS, and ZnO, a single metal substrate, or mutual non-solid solubility or semi-solid solubility limit. A metal substrate made of a composite of two or more small metals can be used. The single metal substrate is, for example, a Cu substrate, and the material of the metal substrate is, for example, at least one metal selected from highly conductive metals such as Ag, Cu, Au, Pt, and W, Mo, and the like. A material comprising at least one metal selected from metals with high hardness such as Cr, Ni, and the like can be used. In the case of using a substrate made of a semiconductor material, the substrate can be provided with an element function, for example, a Zener diode. Furthermore, a composite of Cu—W or Cu—Mo can also be used as the metal substrate.
この半導体発光素子１において、第１導電側電極６は、第１導電型半導体層２の外側に設けられ、第２導電側電極７は、第２導電側半導体層３の外側に設けられ、第１導電側電極６は、絶縁膜１１ａと空隙からなる離間領域１２ａを介して離間して配設されている。また、第２導電側電極７と絶縁膜１１ｂとの間に、メタライズ層８を形成する金属材料または合金材料が充填されて構成された離間領域１２ｂを介して、第２導電側電極７と絶縁膜１１ｂとが離間して配設されている。また、第２導電側電極７と絶縁膜１１ｂとの間の離間領域１２ｂは、第２導電側電極７および絶縁膜１１ｂの外側にメタライズ層（金属材料または合金材料からなる連続層）８が設けられ、離間領域１２ｂが第２導電型半導体層３、第２導電側電極７、絶縁膜１１ｂ、およびメタライズ層８によって密閉されていれば、メタライズ層８を形成する金属材料または合金材料が充填されていない空隙で構成されていてもよい。さらに、第１導電側電極６と絶縁膜１１ａとの間、および第２導電側電極７と絶縁膜１１ｂの間の間隔は、広すぎると、この離間領域を設けた箇所における光の取り出し効率が悪くなるため、１０μｍ以下程度離間され、離間による効果を安定的に得ることができる点で、１μｍ〜１０μｍ程度離間される。また、離間領域は、第１導電型半導体層２がｎ型半導体で構成され、第２導電型半導体層３がｐ型半導体で構成されている場合、すなわち、ｐ側の電極（第２導電側電極７）を構成するＡｇ等の電極材料が絶縁膜１１ｂ、および絶縁膜１１ｂと絶縁膜１１ａとの間を連絡する絶縁膜１１ｃを介してｎ側電極（第１導電側電極６）に移行することを防止する観点からは、ｐ側の電極（第２導電側電極７）に囲まれて配置される絶縁膜１１ｂとｐ側の電極（第２導電側電極７）との間（図１紙面中、中央の絶縁膜と第２導電側電極との間）には、必ずしも離間領域を設ける必要はない。 In this semiconductor light emitting device 1, the first conductive side electrode 6 is provided outside the first conductive type semiconductor layer 2, the second conductive side electrode 7 is provided outside the second conductive side semiconductor layer 3, The one conductive side electrode 6 is spaced apart from the insulating film 11a via a separation region 12a formed of a gap. Further, the second conductive side electrode 7 and the insulating film 11b are insulated from the second conductive side electrode 7 through a separation region 12b configured by filling a metal material or alloy material forming the metallized layer 8 between the second conductive side electrode 7 and the insulating film 11b. The film 11b is spaced apart. Further, in the separation region 12b between the second conductive side electrode 7 and the insulating film 11b, a metallized layer (a continuous layer made of a metal material or an alloy material) 8 is provided outside the second conductive side electrode 7 and the insulating film 11b. If the separation region 12b is sealed by the second conductive semiconductor layer 3, the second conductive side electrode 7, the insulating film 11b, and the metallized layer 8, the metal material or alloy material forming the metallized layer 8 is filled. You may be comprised by the space | gap which is not. Furthermore, if the distance between the first conductive side electrode 6 and the insulating film 11a and the distance between the second conductive side electrode 7 and the insulating film 11b are too wide, the light extraction efficiency at the location where the separated region is provided is increased. Since it becomes worse, it is separated by about 10 μm or less, and is separated by about 1 μm to 10 μm in that the effect of the separation can be stably obtained. The separation region is formed when the first conductive semiconductor layer 2 is formed of an n-type semiconductor and the second conductive semiconductor layer 3 is formed of a p-type semiconductor, that is, a p-side electrode (second conductive side). The electrode material such as Ag constituting the electrode 7) is transferred to the n-side electrode (first conductive side electrode 6) via the insulating film 11b and the insulating film 11c connecting the insulating film 11b and the insulating film 11a. From the viewpoint of preventing this, the space between the insulating film 11b disposed surrounded by the p-side electrode (second conductive side electrode 7) and the p-side electrode (second conductive side electrode 7) (FIG. 1 paper surface). It is not always necessary to provide a separation region between the middle insulating film and the second conductive side electrode.
第２導電側電極７は、Ａｇ、Ａｌ、Ｔｉ、Ｐｔ、Ｒｈ等で形成され、特に、本発明においては、Ａｇ、ＡｌおよびＲｈから選ばれる少なくとも１種の光を反射する金属材料（光反射性金属材料）で構成することが、光取り出し効率の向上に有効である。第２導電側電極７は、例えば、第２導電型半導体層３の側から、Ａｇ層（１００ｎｍ）／Ｎｉ層（１００ｎｍ）／Ｔｉ層（１００ｎｍ）／Ｐｔ層（１００ｎｍ）の順に、合計膜厚が４００ｎｍの４層構造で形成される。このとき、第２導電型半導体層３にＡｇ層を設けることで、発光層４で発光した光を効率よく反射することができる。 The second conductive side electrode 7 is formed of Ag, Al, Ti, Pt, Rh, or the like. In particular, in the present invention, a metal material (light reflecting) that reflects at least one light selected from Ag, Al, and Rh. It is effective to improve the light extraction efficiency. For example, the second conductive side electrode 7 has a total film thickness in the order of Ag layer (100 nm) / Ni layer (100 nm) / Ti layer (100 nm) / Pt layer (100 nm) from the second conductive type semiconductor layer 3 side. Is formed with a 400-layer four-layer structure. At this time, by providing the Ag layer in the second conductivity type semiconductor layer 3, the light emitted from the light emitting layer 4 can be efficiently reflected.
そして、第１導電側電極６および第２導電側電極７を、Ａｇ、Ａｌ等で形成する場合に、前記離間領域１２ａ，１２ｂを介して、第２導電側電極７と絶縁膜１１ｂの間、および第１導電側電極６と絶縁膜１１ａの間を離間することによって、これらの金属のマイグレーションによる素子のリークや破壊を防止することができるため、有効である。特に、第２導電側電極７を高反射率のＡｇで形成する場合に、マイグレーションによる素子のリークや破壊を防止することができるため、有効である。 When the first conductive side electrode 6 and the second conductive side electrode 7 are formed of Ag, Al or the like, the second conductive side electrode 7 and the insulating film 11b are interposed via the separation regions 12a and 12b. Further, by separating the first conductive side electrode 6 and the insulating film 11a, it is possible to prevent leakage and destruction of the element due to migration of these metals, which is effective. In particular, when the second conductive side electrode 7 is formed of Ag having a high reflectance, it is effective because it can prevent element leakage and destruction due to migration.
また、第１導電側電極６と、第２導電側電極７とは、半導体発光部５を間に挟んで、半導体発光部５を平面視して第１導電側電極６と前記第２導電側電極７とが相互に重なり合わないように配置されている。すなわち、半導体発光部５を平面視して第１導電側電極６と前記第２導電側電極７とが交互に配置されている。このように、第１導電側電極６と第２導電側電極７とが配置されることによって、第１導電側電極６と第２導電側電極７との間を流れる電流は、半導体発光部５内を最短で流れることがなく、発光層４において、比較的均一に発光するようになり、光取り出し効率の点で好ましい。さらに、第１導電側電極６と、第２導電側電極７とは、半導体発光部５を平面視して、前記第２導電側電極７の面積が、前記第１導電側電極６の面積よりも大きく形成されている。これによって、電流注入領域の面積を大きくでき、発光効率が向上するとともに、発光による熱の放熱性も向上し、半導体発光素子１の放熱性が改善される。 In addition, the first conductive side electrode 6 and the second conductive side electrode 7 have the semiconductor light emitting unit 5 interposed therebetween, and the first light emitting side electrode 6 and the second conductive side are viewed in plan view of the semiconductor light emitting unit 5. It arrange | positions so that the electrode 7 may not mutually overlap. That is, the first conductive side electrodes 6 and the second conductive side electrodes 7 are alternately arranged in a plan view of the semiconductor light emitting unit 5. Thus, by arranging the first conductive side electrode 6 and the second conductive side electrode 7, the current flowing between the first conductive side electrode 6 and the second conductive side electrode 7 is changed to the semiconductor light emitting unit 5. The light emitting layer 4 emits light relatively uniformly without flowing in the shortest, which is preferable in terms of light extraction efficiency. Furthermore, the first conductive side electrode 6 and the second conductive side electrode 7 are configured such that the area of the second conductive side electrode 7 is larger than the area of the first conductive side electrode 6 when the semiconductor light emitting unit 5 is viewed in plan view. Is also formed large. As a result, the area of the current injection region can be increased, the light emission efficiency is improved, the heat dissipation of heat by light emission is also improved, and the heat dissipation of the semiconductor light emitting element 1 is improved.
さらに、絶縁膜１１ａ，１１ｂ，１１ｃは、ＳｉＯ２、ＳｉＮ、Ａｌ２Ｏ３、ＺｎＯ、ＺｒＯ２、ＴｉＯ２、Ｎｂ２Ｏ５、Ｔａ２Ｏ５等の絶縁性材料で形成される。さらに、絶縁膜１１ｂは、２種以上の多層膜で構成し、この絶縁膜１１ｂにおいても半導体発光部５からの光を反射するように、多層膜を構成する各膜の膜厚を設定してもよい。 Furthermore, the insulating film 11a, 11b, 11c are, SiO 2, SiN, Al 2 O 3, ZnO, is formed of an insulating material such as ZrO 2, TiO 2, Nb 2 O 5, Ta 2 O 5. Furthermore, the insulating film 11b is composed of two or more kinds of multilayer films, and the film thickness of each film constituting the multilayer film is set so that the light from the semiconductor light emitting unit 5 is also reflected in the insulating film 11b. Also good.
そして、この絶縁膜１１ｂは、例えば、第２導電側電極７と同じ膜厚に形成することが好ましい。特に、絶縁膜１１ｂは、第２導電側電極７と同じ膜厚に形成することが、メタライズ層８を介して接合用基板９に接合する際に、絶縁膜１１ｂとメタライズ層８との間、および第２導電側電極７とメタライズ層８との間にボイド（空洞）が生じるのを抑制できるため、好ましい。 The insulating film 11b is preferably formed to have the same thickness as the second conductive side electrode 7, for example. In particular, the insulating film 11b is formed to have the same thickness as the second conductive side electrode 7, and when bonded to the bonding substrate 9 via the metallized layer 8, between the insulating film 11b and the metallized layer 8, Further, it is preferable because voids (cavities) can be suppressed from being generated between the second conductive side electrode 7 and the metallized layer 8.
この半導体発光素子１は、第２導電側電極７が、絶縁膜１１ｂと、離間領域１２ｂを介して離間して配設されている。これによって、半導体発光素子１の動作発光時に高温状態となる電極から、接合や実装時の高温での加熱処理による熱膨張に起因して形成され易い絶縁膜のひび割れや欠けを通ってＡｇやＡｌのマイグレーションが発生するのを防止し、素子のリークや破壊を防止することができる。しかも、マイグレーションによる問題を防止することができるため、マイグレーションを起こし易いＡｇやＡｌ等を電極材料とすることができ、これらのＡｇやＡｌ等からなる電極によって、半導体発光部５からの光を良好に反射することができるため高い光取り出し効率を得ることが可能となる。特に、第２導電型半導体層３がｐ型半導体で構成されている場合、ｐ側の電極となる第２導電側電極７を構成する電極材料、例えば、Ａｇがマイグレーションによって絶縁膜１１ｂを介して第１導電側電極６に移行して素子のリークや破壊を引き起こすことを防止するために、有効である。また、表面積の大きい第２導電側電極７の側に、このような離間構造を設けることで、素子のリークや破壊を引き起こすことがなく、また、第２導電側電極７で好適に光を反射して光取り出し効率にも優れた半導体発光素子を得ることができるため、有効である。さらに、第２導電側電極７の面積が大きいことによって、電流注入領域の面積を大きくでき、発光効率が向上するとともに、発光による熱の放熱性も向上する。 In the semiconductor light emitting device 1, the second conductive side electrode 7 is disposed so as to be separated from the insulating film 11b via a separation region 12b. As a result, from the electrode that is in a high temperature state during the operation light emission of the semiconductor light emitting element 1, through the crack or chip of the insulating film that is likely to be formed due to the thermal expansion due to the heat treatment at the high temperature at the time of bonding or mounting, Ag or Al Migration can be prevented, and element leakage and destruction can be prevented. In addition, since problems due to migration can be prevented, Ag, Al, or the like that is likely to cause migration can be used as an electrode material, and the light from the semiconductor light emitting unit 5 is excellent by the electrodes made of Ag, Al, or the like. Therefore, high light extraction efficiency can be obtained. In particular, when the second conductivity type semiconductor layer 3 is composed of a p-type semiconductor, an electrode material constituting the second conductivity side electrode 7 serving as the p side electrode, for example, Ag is transferred via the insulating film 11b by migration. This is effective to prevent the element from leaking or being destroyed by shifting to the first conductive side electrode 6. Further, by providing such a separation structure on the side of the second conductive side electrode 7 having a large surface area, no leakage or destruction of the element is caused, and light is suitably reflected by the second conductive side electrode 7. Thus, a semiconductor light emitting device having excellent light extraction efficiency can be obtained, which is effective. Further, since the area of the second conductive side electrode 7 is large, the area of the current injection region can be increased, and the light emission efficiency is improved and the heat dissipation of heat due to light emission is also improved.
次に、この半導体発光素子１における電極（第１導電側電極６、第２導電側電極７）２１と、絶縁膜２２（１１ａ，１１ｂ）との配置の実施形態について説明する。
図２（ａ）および（ｂ）は、電極２１と絶縁膜２２の配置例を示す平面模式図、図３（ａ）〜（ｄ）は、電極２１と絶縁膜２２の配置例を示す模式断面図である。
Next, an embodiment of the arrangement of the electrodes (first conductive side electrode 6, second conductive side electrode 7) 21 and insulating film 22 (11a, 11b) in the semiconductor light emitting device 1 will be described.
2A and 2B are schematic plan views showing examples of arrangement of the electrode 21 and the insulating film 22, and FIGS. 3A to 3D are schematic cross-sections showing examples of arrangement of the electrode 21 and the insulating film 22. FIG. FIG.
図２（ａ）に示す配置例は、電極２１と絶縁膜２２が、電極２１を囲んで絶縁膜２２が配設され、電極２１と絶縁膜２２とが、離間領域２３を介して離間して配設されている例である。 In the arrangement example shown in FIG. 2A, the electrode 21 and the insulating film 22 are disposed so as to surround the electrode 21, and the electrode 21 and the insulating film 22 are separated from each other via the separation region 23. It is the example arrange | positioned.
また、図２（ｂ）に示す配置例は、絶縁膜２２ａを、離間領域２３ａを介して、電極２１が囲み、さらに、その外側を、離間領域２３ｂを介して、絶縁膜２２ｂが囲んで配設されている例である。この配置例において、絶縁膜２２ａと電極２１とは、離間領域２３ａを介して離間して配置され、電極２１と絶縁膜２２ｂとは、離間領域２３ｂを介して離間して配置されている。 Further, in the arrangement example shown in FIG. 2B, the insulating film 22a is surrounded by the electrode 21 via the separation region 23a, and further, the outside is surrounded by the insulation film 22b via the separation region 23b. This is an example. In this arrangement example, the insulating film 22a and the electrode 21 are spaced apart via a separation region 23a, and the electrode 21 and the insulating film 22b are spaced apart via a separation region 23b.
図３（ａ）に示す配置例は、半導体発光部２５の上に、電極２１と絶縁膜２２が、離間領域２３を介して離間して配設され、離間領域２３には、電極２１と絶縁膜２２の上に形成されるメタライズ層２４の構成材料が充填されている例である。 In the arrangement example shown in FIG. 3A, the electrode 21 and the insulating film 22 are arranged on the semiconductor light emitting unit 25 with a separation region 23 therebetween, and the separation region 23 is insulated from the electrode 21. In this example, the constituent material of the metallized layer 24 formed on the film 22 is filled.
図３（ｂ）に示す配置例は、半導体発光部２５の上に、電極２１と絶縁膜２２が、離間領域２３を介して離間して配設され、離間領域２３に、電極２１と絶縁膜２２の上に形成されるメタライズ層２４の構成材料が充填されず、空隙を形成している例である。 In the arrangement example shown in FIG. 3B, the electrode 21 and the insulating film 22 are disposed on the semiconductor light emitting unit 25 with a separation region 23 therebetween, and the electrode 21 and the insulating film are disposed on the separation region 23. This is an example in which the constituent material of the metallized layer 24 formed on 22 is not filled and a void is formed.
図３（ｃ）および（ｄ）に示す配置例は、半導体発光部２５の上に、電極２１と絶縁層２２とが、交互に配置され、電極２１と絶縁層２２との間に、空隙からなる離間領域２３が設けられている例である。 In the arrangement example shown in FIGS. 3C and 3D, the electrodes 21 and the insulating layers 22 are alternately arranged on the semiconductor light emitting unit 25, and there is no gap between the electrodes 21 and the insulating layers 22. This is an example in which a separation area 23 is provided.
さらに、図４〜図６は、半導体発光素子１における電極（第１導電側電極、第２導電側電極）と、絶縁膜との配置例に関する３つの実施形態を示す図である。 4 to 6 are diagrams showing three embodiments relating to arrangement examples of the electrodes (first conductive side electrode, second conductive side electrode) and the insulating film in the semiconductor light emitting device 1.
図４（ａ）は、半導体発光素子の第１導電側電極の側（図４（ａ）の紙面上方）から、第２導電側電極が接続された第２導電側半導体層の表面を平面視した平面模式図を示す。
図４（ａ）に示す配置例は、円形状の円頭部３７ａ，３７ｂと、円頭部３７ａ，３７ｂに連設された矩形部３８ａ，３８ｂとからなる絶縁膜３９ａ，３９ｂを有し、その絶縁膜３９ａ，３９ｂを囲んで設けられた第２導電側電極４０とを有し、さらに、第２導電側電極４０を囲んで絶縁膜３９ｃが設けられている例である。２つの絶縁膜３９ａ，３９ｂは、円頭部３７ａ，３７ｂと矩形部３８ａ，３８ｂが同じ側になるように並列に配置されている。そして、絶縁膜３９ａ，３９ｂと、第２導電側電極４０とは、離間領域４１ａ，４１ｂを介して離間して設けられ、第２導電側電極４０と絶縁膜３９ｃとは、離間領域４１ｃを介して離間して設けられている。さらに、外側の絶縁膜３９ｃは、図４（ｃ）に示すとおり、第１導電側電極３４ａ，３４ｂの側の絶縁膜３６と、半導体発光素子の外側端に設けられた絶縁膜４２によって連絡されている。
4A is a plan view of the surface of the second conductive side semiconductor layer to which the second conductive side electrode is connected from the side of the first conductive side electrode of the semiconductor light emitting element (above the paper surface of FIG. 4A). A schematic plan view is shown.
The arrangement example shown in FIG. 4A includes insulating films 39a and 39b including circular circular heads 37a and 37b and rectangular portions 38a and 38b connected to the circular heads 37a and 37b. In this example, the second conductive side electrode 40 is provided so as to surround the insulating films 39a and 39b, and the insulating film 39c is provided so as to surround the second conductive side electrode 40. The two insulating films 39a and 39b are arranged in parallel so that the circular head portions 37a and 37b and the rectangular portions 38a and 38b are on the same side. The insulating films 39a and 39b and the second conductive side electrode 40 are provided apart via the separation regions 41a and 41b, and the second conductive side electrode 40 and the insulating film 39c are provided via the separation region 41c. Spaced apart. Further, as shown in FIG. 4C, the outer insulating film 39c is connected by an insulating film 36 on the first conductive side electrodes 34a and 34b side and an insulating film 42 provided on the outer end of the semiconductor light emitting element. ing.
図４（ｂ）は、半導体発光素子を第１導電側電極の側から第１導電側電極が接続された第１導電側半導体層の表面を平面視した平面模式図を示す。
図４（ｂ）に示す第１導電側電極の側の配置例では、図４（ａ）に示す第２導電側電極４０と絶縁膜３９ａ，３９ｂの配置に対して、電極と絶縁膜の配置が逆となっている。すなわち、図４（ｂ）に示す配置例は、円形状の円頭部３０ａ，３０ｂと、円頭部３０ａ，３０ｂに連設された矩形部３２ａ，３２ｂとで構成される第１導電側電極３４ａ，３４ｂを有し、さらに、第１導電側電極３４ａ，３４ｂの周囲に設けられた離間領域３５ａ，３５ｂを介して、絶縁膜３６が、第１導電側電極３４ａ，３４ｂを囲んで設けられている例である。円頭部３０ａ，３０ｂは、半導体発光素子の外部と電気的に接続するためのパッド電極であり、矩形部３２ａ，３２ｂは、半導体発光部４３（図４（ｃ）参照）の全体に電流が流れるように第１導電型半導体層４３ａ（図４（ｃ）参照）の表面で電流を広げるための延伸電極である。このように、パッド電極（円頭部３０ａ，３０ｂ）と、延伸電極（矩形部３２ａ，３２ｂ）の両方をあわせて第１導電側電極３４ａ，３４ｂと称しているが、少なくともパッド電極（円頭部３０ａ，３０ｂ）が第１導電側電極であればよく、延伸電極（矩形部３２ａ，３２ｂ）は設けなくてもよい。２つの第１導電側電極３４ａ，３４ｂは、円頭部３０ａ，３０ｂと矩形部３２ａ，３２ｂとが、同じ側になるように並列に配置されている。
FIG. 4B is a schematic plan view of the surface of the first conductive side semiconductor layer where the first conductive side electrode is connected to the semiconductor light emitting element from the first conductive side electrode side.
In the arrangement example on the first conductive side electrode side shown in FIG. 4B, the arrangement of the electrode and the insulating film is different from the arrangement of the second conductive side electrode 40 and the insulating films 39a and 39b shown in FIG. Is reversed. That is, the arrangement example shown in FIG. 4B is a first conductive side electrode composed of circular circular heads 30a and 30b and rectangular parts 32a and 32b connected to the circular heads 30a and 30b. 34a and 34b, and an insulating film 36 is provided so as to surround the first conductive side electrodes 34a and 34b via spaced regions 35a and 35b provided around the first conductive side electrodes 34a and 34b. This is an example. The circular heads 30a and 30b are pad electrodes for electrical connection with the outside of the semiconductor light emitting device, and the rectangular parts 32a and 32b are configured to receive current in the entire semiconductor light emitting part 43 (see FIG. 4C). This is an extended electrode for spreading current on the surface of the first conductivity type semiconductor layer 43a (see FIG. 4C) so as to flow. As described above, the pad electrodes (circular heads 30a and 30b) and the extended electrodes (rectangular portions 32a and 32b) are collectively referred to as first conductive side electrodes 34a and 34b. The portions 30a and 30b) may be the first conductive side electrodes, and the extended electrodes (rectangular portions 32a and 32b) may not be provided. The two first conductive side electrodes 34a and 34b are arranged in parallel so that the circular head portions 30a and 30b and the rectangular portions 32a and 32b are on the same side.
次に、図４（ｃ）は、図４（ａ）に示すＡ−Ａ´線矢視断面模式図である。
図４（ｃ）に示すとおり、第１導電側電極３４ａ，３４ｂと、第２導電側電極４０とは、第１導電側電極３４ａ，３４ｂの側から第１導電型半導体層４３ａ、発光層４３ｂおよび第２導電型半導体層４３ｃの順に構成される半導体発光部４３を挟んで、半導体発光素子を平面視して（図４（ａ）の紙面上方から見て）交互に配置されている。また、第２導電側電極４０と絶縁膜３９ａ，３９ｂ，３９ｃの外側には、これらの第２導電側電極４０と絶縁膜３９ａ，３９ｂ，３９ｃに接して、金属材料または合金材料からなるメタライズ層４４ａが連続して設けられ、メタライズ層４４ａの外側には基板４４ｂ、さらに基板４４ｂの外側に裏面メタライズ層４４ｃが設けられている。さらに、第２導電側電極４０と絶縁膜３９ａ，３９ｂの間の離間領域４１ａ、４１ｂおよび第２導電側電極４０と絶縁膜３９ｃとの間の離間領域４１ｃには、メタライズ層４４を形成する金属材料または合金材料が充填されている。なお、離間領域４１ａ，４１ｂは、第２導電型半導体層４３ｃと、第２導電側電極４０と、絶縁膜３９ａ，３９ｂと、基板４４ｂとの間で密閉されていれば、離間領域は空隙で構成されていてもよい。
Next, FIG. 4C is a schematic cross-sectional view taken along line AA ′ shown in FIG.
As shown in FIG. 4C, the first conductive side electrodes 34a and 34b and the second conductive side electrode 40 are formed from the first conductive side electrodes 34a and 34b from the first conductive type semiconductor layer 43a and the light emitting layer 43b. The semiconductor light emitting elements are alternately arranged in plan view (viewed from above in FIG. 4A) with the semiconductor light emitting portions 43 configured in the order of the second conductive type semiconductor layers 43c interposed therebetween. Further, on the outside of the second conductive side electrode 40 and the insulating films 39a, 39b, 39c, a metallized layer made of a metal material or an alloy material is in contact with the second conductive side electrode 40 and the insulating films 39a, 39b, 39c. The substrate 44b is provided outside the metallized layer 44a, and the back metallized layer 44c is provided outside the substrate 44b. Further, the metal forming the metallized layer 44 in the separation regions 41a and 41b between the second conductive side electrode 40 and the insulating films 39a and 39b and the separation region 41c between the second conductive side electrode 40 and the insulating film 39c. Filled with material or alloy material. If the separation regions 41a and 41b are sealed between the second conductive semiconductor layer 43c, the second conductive side electrode 40, the insulating films 39a and 39b, and the substrate 44b, the separation regions are voids. It may be configured.
また、図５（ａ）〜（ｂ）は、半導体発光素子における電極と絶縁膜の配置の他の例を示す。
図５（ａ）は、半導体発光素子の第１導電側電極の側から、第２導電側電極が接続された第２導電型半導体層の表面を平面視した平面模式図を示す。
図５（ａ）に示す配置例は、円形状の円頭部３７ａ，３７ｂと、円頭部３７ａ，３７ｂに連設された矩形部３８ａ，３８ｂとからなる絶縁膜３９ａ，３９ｂが、円頭部３７ａ，３７ｂと矩形部３８ａ，３８ｂとが、相互に反対側になるように配置され、絶縁膜３９ａ，３９ｂを囲んで第２導電側電極４０が設けられ、さらに、第２導電側電極４０を囲んで絶縁膜３９ｃが設けられている例である。そして、絶縁膜３９ａ，３９ｂと、第２導電側電極４０とは、絶縁膜３９ａ，３９ｂの周囲を囲んで設けられた離間領域４１ａ，４１ｂによって離間され、第２導電側電極４０は、その周囲を囲んで、半導体発光素子の外周縁に設けられた絶縁膜３９ｃと、離間領域４１ｃを介して離間して設けられている。さらに、外側の絶縁膜３９ｃは、第１導電側電極３４ａ，３４ｂの側の絶縁膜３６と、半導体発光素子の外側端に設けられた絶縁膜によって連絡されている。
5A to 5B show other examples of the arrangement of electrodes and insulating films in the semiconductor light emitting device.
FIG. 5A is a schematic plan view of the surface of the second conductive type semiconductor layer to which the second conductive side electrode is connected from the first conductive side electrode side of the semiconductor light emitting device.
In the arrangement example shown in FIG. 5A, the insulating films 39a and 39b including circular circular heads 37a and 37b and rectangular portions 38a and 38b connected to the circular heads 37a and 37b The portions 37a and 37b and the rectangular portions 38a and 38b are arranged so as to be opposite to each other, the second conductive side electrode 40 is provided so as to surround the insulating films 39a and 39b, and the second conductive side electrode 40 is further provided. Is an example in which an insulating film 39c is provided. The insulating films 39a and 39b and the second conductive side electrode 40 are separated from each other by separation regions 41a and 41b provided surrounding the insulating films 39a and 39b. The insulating film 39c provided on the outer peripheral edge of the semiconductor light emitting element is separated from the semiconductor light emitting element via a separation region 41c. Further, the outer insulating film 39c is connected to the insulating film 36 on the first conductive side electrodes 34a, 34b side by an insulating film provided on the outer end of the semiconductor light emitting element.
図５（ｂ）は、半導体発光素子の第１導電側電極の側から、第１導電側電極が接続された第１導電型半導体層の表面を平面視した平面模式図を示す。
図５（ｂ）に示す第１導電側電極の側では、図５（ａ）に示す第２導電側電極４０と、絶縁膜３９ａ，３９ｂの配置に対して、電極と絶縁膜の配置が逆となっている。図５（ｂ）に示す第１導電側電極の側の配置例は、円形状の円頭部３０ａ，３０ｂと、円頭部３０ａ，３０ｂに連設された矩形部３２ａ，３２ｂとで構成される第１導電側電極３４ａ，３４ｂを有し、さらに、第１導電側電極３４ａ，３４ｂの周囲に設けられた離間領域３５ａ，３５ｂを介して、絶縁膜３６が、第１導電側電極３４ａ，３４ｂを囲んで設けられている例である。円頭部３０ａ，３０ｂは、半導体発光素子の外部と電気的に接続するためのパッド電極であり、矩形部３２ａ，３２ｂは、半導体発光部４３（図４（ｃ）参照）の全体に電流が流れるように第１導電型半導体層４３ａ（図４（ｃ）参照）の表面で電流を広げるための延伸電極である。このように、パッド電極（円頭部３０ａ，３０ｂ）と、延伸電極（矩形部３２ａ，３２ｂ）の両方をあわせて第１導電側電極３４ａ，３４ｂと称しているが、少なくともパッド電極（円頭部３０ａ，３０ｂ）が第１導電側電極であればよく、延伸電極（矩形部３２ａ，３２ｂ）は設けなくてもよい。２つの第１導電側電極３４ａ，３４ｂは、円頭部３０ａ，３０ｂと矩形部３２ａ，３２ｂとが、相互に反対側になるように並列に配置されている。
FIG. 5B is a schematic plan view of the surface of the first conductive type semiconductor layer to which the first conductive side electrode is connected from the side of the first conductive side electrode of the semiconductor light emitting device.
On the first conductive side electrode side shown in FIG. 5B, the arrangement of the electrode and the insulating film is opposite to the arrangement of the second conductive side electrode 40 shown in FIG. 5A and the insulating films 39a and 39b. It has become. The arrangement example on the first conductive side electrode side shown in FIG. 5B is composed of circular circular heads 30a and 30b and rectangular parts 32a and 32b connected to the circular heads 30a and 30b. Furthermore, the insulating film 36 is connected to the first conductive side electrodes 34a, 34b via the separation regions 35a, 35b provided around the first conductive side electrodes 34a, 34b. It is an example provided surrounding 34b. The circular heads 30a and 30b are pad electrodes for electrical connection with the outside of the semiconductor light emitting device, and the rectangular parts 32a and 32b are configured to receive current in the entire semiconductor light emitting part 43 (see FIG. 4C). This is an extended electrode for spreading current on the surface of the first conductivity type semiconductor layer 43a (see FIG. 4C) so as to flow. As described above, the pad electrodes (circular heads 30a and 30b) and the extended electrodes (rectangular portions 32a and 32b) are collectively referred to as first conductive side electrodes 34a and 34b. The portions 30a and 30b) may be the first conductive side electrodes, and the extended electrodes (rectangular portions 32a and 32b) may not be provided. The two first conductive side electrodes 34a and 34b are arranged in parallel so that the circular head portions 30a and 30b and the rectangular portions 32a and 32b are opposite to each other.
この図５（ａ）〜（ｂ）に示す配置例の図５（ａ）のＢ−Ｂ´線矢視部における断面構造は、前記の図４（ｃ）に示す断面模式図と同様であるので、説明を省略する。 The cross-sectional structure taken along the line BB ′ in FIG. 5A of the arrangement example shown in FIGS. 5A to 5B is the same as the schematic cross-sectional view shown in FIG. Therefore, explanation is omitted.
次に、図６（ａ）〜（ｂ）は、半導体発光素子における電極と絶縁膜の配置の他の例を示す。
図６（ａ）は、第１導電側電極の上側から第２導電側電極が接続された第２導電型半導体層の表面を平面視した平面模式図を示す。
図６（ａ）に示す配置例は、円形状の円頭部３７ａ，３７ｂと、円頭部３７ａ，３７ｂに連設された矩形部３８ａ，３８ｂとからなる絶縁膜３９ａ，３９ｂと、その絶縁膜３９ａ，３９ｂを囲んで設けられた第２導電側電極４０とを有し、さらに、第２導電側電極４０を囲んで絶縁膜３９ｃが設けられている例である。２つの絶縁膜３９ａ，３９ｂは、円頭部３７ａ，３７ｂと矩形部３８ａ,３８ｂが、同じ側に並列され、さらに、絶縁膜３９ａの円頭部３７ａと、絶縁膜３９ｂの円頭部３７ｂとが、連絡部４５を介して連絡されている。そして、絶縁膜３９ａ，３９ｂと第２導電側電極４０とは、離間領域４１ａを介して離間して設けられ、第２導電側電極４０と絶縁膜３９ｃとは、離間領域４１ｂを介して離間して設けられている。さらに、外側の絶縁膜３９ｃは、第１導電側電極３３の側の絶縁膜３６と、半導体発光素子の外側端に設けられた絶縁膜によって連絡されている。
Next, FIGS. 6A to 6B show other examples of arrangement of electrodes and insulating films in the semiconductor light emitting device.
FIG. 6A is a schematic plan view of the surface of the second conductive type semiconductor layer to which the second conductive side electrode is connected from above the first conductive side electrode.
The arrangement example shown in FIG. 6A includes insulating films 39a and 39b composed of circular circular heads 37a and 37b and rectangular portions 38a and 38b connected to the circular heads 37a and 37b, and the insulation thereof. In this example, the second conductive side electrode 40 is provided so as to surround the films 39a and 39b, and the insulating film 39c is provided so as to surround the second conductive side electrode 40. The two insulating films 39a and 39b have circular head portions 37a and 37b and rectangular portions 38a and 38b arranged in parallel on the same side, and further, a circular head portion 37a of the insulating film 39a and a circular head portion 37b of the insulating film 39b. Are communicated via the communication unit 45. The insulating films 39a and 39b and the second conductive side electrode 40 are separated from each other via the separation region 41a, and the second conductive side electrode 40 and the insulating film 39c are separated from each other via the separation region 41b. Is provided. Further, the outer insulating film 39c is connected to the insulating film 36 on the first conductive side electrode 33 side by an insulating film provided on the outer end of the semiconductor light emitting element.
図６（ｂ）は、半導体発光素子の第１導電側電極の側から、第１導電側電極が接続された第１導電型半導体層の表面を平面視した平面模式図である。
図６（ｂ）に示す第１導電側電極の側の配置例は、図６（ａ）に示す第２導電側電極４０と絶縁膜３９ａ，３９ｂの配置に対して、電極と絶縁膜の配置が逆となっている。すなわち、円形状の円頭部３０ａ，３０ｂと、円頭部３０ａ，３０ｂに連設された矩形部３２ａ，３２ｂと、２つの円頭部３０ａと円頭部３０ｂの間を連絡する連絡部３１とで構成される第１導電側電極３３を有する。そして、図６（ｂ）に示すように、第１導電側電極３３の表面においては、絶縁膜３６が、第１導電側電極３３を囲み、第１導電側電極３３と絶縁膜３６とは、離間領域を設けずに、接した形態で設けられている。特に、第１導電側電極３３は、パッド電極となる円頭部３０ａ，３０ｂの中央が露出しており、その他の部位は絶縁膜３６で覆われている。これによって、第１導電側電極３３の密着性が向上し、剥がれを防止することができる。
FIG. 6B is a schematic plan view of the surface of the first conductive type semiconductor layer to which the first conductive side electrode is connected from the side of the first conductive side electrode of the semiconductor light emitting device.
The arrangement example of the first conductive side electrode side shown in FIG. 6B is an arrangement of the electrode and the insulating film with respect to the arrangement of the second conductive side electrode 40 and the insulating films 39a and 39b shown in FIG. Is reversed. That is, the circular heads 30a and 30b, the rectangular parts 32a and 32b connected to the circular heads 30a and 30b, and the communication part 31 that communicates between the two circular heads 30a and 30b. The 1st electroconductive side electrode 33 comprised by these is provided. 6B, on the surface of the first conductive side electrode 33, the insulating film 36 surrounds the first conductive side electrode 33, and the first conductive side electrode 33 and the insulating film 36 are They are provided in contact with each other without providing a separation area. In particular, the first conductive side electrode 33 is exposed at the center of the circular heads 30 a and 30 b serving as pad electrodes, and the other portions are covered with the insulating film 36. As a result, the adhesion of the first conductive side electrode 33 can be improved and peeling can be prevented.
図６（ｃ）は、図６（ａ）に示すＣ−Ｃ´線矢視断面模式図である。
図６（ｃ）に示すとおり、第１導電側電極３３と、第２導電側電極４０とは、第１導電側電極３４ａ，３４ｂの側から第１導電型半導体層４３ａ、発光層４３ｂおよび第２導電型半導体層４３ｃの順に構成される半導体発光部４３を挟んで、半導体発光素子を平面視して交互に配置されている。第１導電側電極３３は、絶縁膜３６とは、接した形態で設けられ、第１導電側電極３３の円頭部３０ａ，３０ｂの中央が露出し、その他の部位（円頭部３０ａ，３０ｂの上縁、矩形部３２ａ，３２ｂ）は絶縁膜３６によって覆われている。また、第２導電側電極４０と絶縁膜３９ａ，３９ｂ，３９ｃの外側には、これらの第２導電側電極４０と絶縁膜３９ａ，３９ｂ，３９ｃに接して、金属材料または合金材料からなるメタライズ層４４ａが連続して設けられ、メタライズ層４４ａの外側には基板４４ｂ、さらに、基板４４ｂの外側に裏面メタライズ層４４ｃが設けられている。さらに、第２導電側電極４０と絶縁膜３９ａ，３９ｂの間の離間領域４１ａ、および第２導電側電極４０と絶縁膜３９ｃとの間の離間領域４１ｂには、メタライズ層４４を形成する金属材料または合金材料が充填されている。なお、離間領域４１ａ，４１ｂは、第２導電型半導体層４３ｃと、第２導電側電極４０と、絶縁膜３９ａ，３９ｂと、基板４４ｂとの間で密閉されていれば、離間領域４１ａ，４１ｂは空隙で構成されていてもよい。
FIG. 6C is a schematic cross-sectional view taken along the line CC ′ shown in FIG.
As shown in FIG. 6C, the first conductive side electrode 33 and the second conductive side electrode 40 are formed from the first conductive side electrodes 34a and 34b from the first conductive type semiconductor layer 43a, the light emitting layer 43b and the first conductive side electrode 34a. The semiconductor light emitting elements are alternately arranged in plan view across the semiconductor light emitting portions 43 configured in the order of the two-conductivity type semiconductor layers 43c. The first conductive side electrode 33 is provided in contact with the insulating film 36, the center of the circular heads 30a, 30b of the first conductive side electrode 33 is exposed, and the other parts (circular heads 30a, 30b). And the rectangular portions 32 a and 32 b) are covered with an insulating film 36. Further, on the outside of the second conductive side electrode 40 and the insulating films 39a, 39b, 39c, a metallized layer made of a metal material or an alloy material is in contact with the second conductive side electrode 40 and the insulating films 39a, 39b, 39c. The substrate 44b is provided outside the metallized layer 44a, and the back metallized layer 44c is provided outside the substrate 44b. Further, the metal material for forming the metallized layer 44 in the separation region 41a between the second conductive side electrode 40 and the insulating films 39a and 39b and the separation region 41b between the second conductive side electrode 40 and the insulating film 39c. Or the alloy material is filled. If the separation regions 41a and 41b are sealed between the second conductive semiconductor layer 43c, the second conductive side electrode 40, the insulating films 39a and 39b, and the substrate 44b, the separation regions 41a and 41b. May be composed of voids.
また、図４〜５に示す電極と絶縁膜の配置例は、第１導電側電極３４ａ，３４ｂと絶縁膜３６との間に離間領域３５ａ，３５ｂを設けた例であるが、本発明の半導体発光素子では、例えば、図６に示すように、第２導電側電極４０と絶縁膜３９ａ，３９ｂ，３９ｃの間に離間領域４１ａ，４１ｂを設けた構成であれば、第１導電側電極３３と絶縁膜３６との間に離間領域を設けなくてもよい。 4 to 5 are examples in which the separation regions 35a and 35b are provided between the first conductive side electrodes 34a and 34b and the insulating film 36 in the arrangement example of the electrodes and the insulating film. In the light emitting element, for example, as shown in FIG. 6, if the separation regions 41 a and 41 b are provided between the second conductive side electrode 40 and the insulating films 39 a, 39 b and 39 c, the first conductive side electrode 33 and A separation region may not be provided between the insulating film 36 and the insulating film 36.
これらの図４〜図６に示す電極と絶縁膜の配置を有する半導体発光素子では、基板側あるいは実装する側に位置する第２導電側電極４０と絶縁膜３９ａ，３９ｂ，３９ｃの間に離間領域４１ａ，４１ｂ，４１ｃを設けることによって、接合や実装時の高温での加熱処理による熱膨張に起因して形成され易い絶縁膜のひび割れや欠けに起因するマイグレーションを抑制することができる。そのため、マイグレーションを起こし易いＡｇやＡｌ等で電極（第２導電側電極４０）を形成することができ、これらのＡｇやＡｌ等からなる電極によって、半導体発光部４３からの光を良好に反射することができるため高い光取り出し効率を得ることが可能となる。特に、半導体発光部４３の第２導電側電極４０の側の第２導電型半導体層４３ｃがｐ型半導体で構成され、ｐ側の電極となる第２導電側電極４０を構成する電極材料としてマイグレーションを起こし易いＡｇやＡｌ等を用いる場合、これらのＡｇやＡｌ等がマイグレーションによって、絶縁膜３９ａ，３９ｂ，３９ｃを介して第１導電側電極３４ａ，３４ｂ，３３に移行して素子のリークや破壊を引き起こすことを防止するために有効である。 In the semiconductor light emitting device having the arrangement of the electrode and the insulating film shown in FIGS. 4 to 6, a separation region is formed between the second conductive side electrode 40 located on the substrate side or the mounting side and the insulating films 39a, 39b, and 39c. By providing 41a, 41b, and 41c, it is possible to suppress migration due to cracks or chipping of the insulating film that is easily formed due to thermal expansion due to heat treatment at a high temperature during bonding or mounting. Therefore, the electrode (second conductive side electrode 40) can be formed of Ag, Al, or the like that easily causes migration, and light from the semiconductor light emitting unit 43 is favorably reflected by the electrode made of Ag, Al, or the like. Therefore, high light extraction efficiency can be obtained. In particular, the second conductive type semiconductor layer 43c on the second conductive side electrode 40 side of the semiconductor light emitting unit 43 is formed of a p-type semiconductor, and migration is performed as an electrode material that constitutes the second conductive side electrode 40 that becomes the p side electrode. In the case of using Ag, Al, or the like that is liable to cause the leakage, the Ag, Al, or the like migrates to the first conductive side electrodes 34a, 34b, 33 via the insulating films 39a, 39b, 39c due to migration, and the element leaks or breaks. It is effective to prevent causing.
さらに、第１導電側電極３４ａ，３４ｂ，３３と第２導電側電極４０が、半導体発光素子を平面視して（図４（ａ）、図５（ａ）または図６（ａ）の紙面上方から見て）交互に配置されるとともに、図４（ｂ）、図５（ｂ）または図６（ｂ）に示すとおり、第２導電側電極４０の側の内側の絶縁膜３９ａ，３９ｂと、外側の絶縁膜３９ｃとを独立して設けることによって、第２導電側電極４０の面積を大きく形成することができる。これによって、電流注入領域の面積を大きくでき、発光効率が向上するとともに、発光による熱の放熱性も向上し、半導体発光素子の放熱性が改善される。 Further, the first conductive side electrodes 34a, 34b, 33 and the second conductive side electrode 40 are arranged in plan view of the semiconductor light emitting device (FIG. 4 (a), FIG. 5 (a) or FIG. As shown in FIG. 4 (b), FIG. 5 (b), or FIG. 6 (b), the insulating films 39a and 39b on the inner side of the second conductive side electrode 40 side, By providing the outer insulating film 39c independently, the area of the second conductive side electrode 40 can be increased. As a result, the area of the current injection region can be increased, the light emission efficiency is improved, the heat dissipation by heat emission is also improved, and the heat dissipation of the semiconductor light emitting element is improved.
さらに、第１導電側電極３４ａ，３４ｂ，３３と第２導電側電極４０が、半導体発光素子を平面視して（図４（ａ）、図５（ａ）または図６（ａ）の紙面上方から見て）交互に配置されていることによって、図４（ｃ）、図６（ｃ）に示すように、第１導電側電極３４ａ，３４ｂと第２導電側電極４０の間に流れる電流が、交互に配置されている第１導電側電極３４ａ，３４ｂと第２導電側電極４０の間の半導体発光部４３内を、矢印Ｘ（図４（ｃ）、参照）で示すような経路を通って流れ、半導体発光部４３ｂ、４３ｃ内を流れる電流を制御することが可能となる。具体的には、第１導電側電極３４ａ，３４ｂ，３３に対向する位置にある半導体発光部４３には電流が流れ難くなり、そこでの発光は比較的弱くなる。これに対し、第２導電側電極４０に対向する位置にある半導体発光部４３には電流が流れ易く、そこでの発光が比較的強くなり、第１導電型半導体層４３ａの側から効率よく光が外部に取り出されるようになる。さらに、図４（ｂ）、図５（ｂ）および図６（ｂ）に示すとおり、第１導電側電極３４ａ，３４ｂ,３３と絶縁膜３６とが離間領域３５ａ,３５ｂを介して離間している形態では、この電流の制御が効果的になり、さらに第１導電型半導体層４３ａの側から効率よく光が外部に取り出されるようになる。 Further, the first conductive side electrodes 34a, 34b, 33 and the second conductive side electrode 40 are arranged in plan view of the semiconductor light emitting device (FIG. 4 (a), FIG. 5 (a) or FIG. As shown in FIG. 4C and FIG. 6C, the current flowing between the first conductive side electrodes 34a and 34b and the second conductive side electrode 40 is caused by being alternately arranged. The semiconductor light emitting unit 43 between the first conductive side electrodes 34a and 34b and the second conductive side electrode 40, which are alternately arranged, passes through a path as indicated by an arrow X (see FIG. 4C). The current flowing through the semiconductor light emitting units 43b and 43c can be controlled. Specifically, it becomes difficult for a current to flow through the semiconductor light emitting portion 43 located at a position facing the first conductive side electrodes 34a, 34b, 33, and the light emission therein becomes relatively weak. On the other hand, the current easily flows through the semiconductor light emitting portion 43 located at the position facing the second conductive side electrode 40, and the light emission there is relatively strong, and light is efficiently emitted from the first conductive type semiconductor layer 43a side. It comes out to the outside. Further, as shown in FIGS. 4B, 5B, and 6B, the first conductive side electrodes 34a, 34b, 33 and the insulating film 36 are separated from each other via the separation regions 35a, 35b. In the present embodiment, this current control is effective, and light is efficiently extracted to the outside from the first conductivity type semiconductor layer 43a side.
次に、図７（ａ）〜（ｄ）を参照して、半導体発光素子１における電極（図１に示す第１導電側電極６、第２導電側電極７）と絶縁膜（図１に示す１１ａ，１１ｂ）の配置に関する他の実施形態について説明する。 Next, referring to FIGS. 7A to 7D, the electrodes (first conductive side electrode 6 and second conductive side electrode 7 shown in FIG. 1) and insulating film (shown in FIG. 1) in the semiconductor light emitting element 1 are described. Another embodiment relating to the arrangement of 11a, 11b) will be described.
また、図７（ａ）は、第１導電側電極の側から第２導電側電極が接続された第２導電型半導体層の表面を平面視した平面模式図を示す。
この第２導電側電極の側の配置例では、半円盤状の半円頭部１００ａ，１００ｂと、長枝状の枝部１０１ａ，１０１ｂ，１０１ｃと、半円頭部１００ａ，１００ｂと枝部１０１ａ，１０１ｂ，１０１ｃを連絡する連絡部１０２とからなる絶縁膜１０３を有し、その絶縁膜１０３を囲む第２導電側電極１０４を有する。絶縁膜１０３は、その周囲を囲んで設けられた離間領域１０５を介して第２導電側電極１０４と離間され、第２導電側電極１０４は、その周囲を囲んで設けられた離間領域１０６を介して、外側縁に設けられた絶縁膜１０７と離間されている。また、絶縁膜１０３の半円頭部１００ａ，１００ｂは、外側縁の絶縁膜１０７と連結部１０７ａを介して連結されている。すなわち、内側の絶縁膜１０３と、外側の絶縁膜１０７とが、連続して設けられている。さらに、外側の絶縁膜１０７は、図７（ｃ）に示すとおり、第１導電側電極９４の側の絶縁膜９５と、半導体発光素子１の外側端に設けられた絶縁膜１０８によって連絡されている。
FIG. 7A is a schematic plan view of the surface of the second conductive type semiconductor layer to which the second conductive side electrode is connected from the first conductive side electrode side in plan view.
In the arrangement example on the second conductive side electrode side, the semicircular heads 100a, 100b, the long branch parts 101a, 101b, 101c, the semicircular head parts 100a, 100b, and the branch parts 101a. , 101b, and 101c, and a second conductive side electrode 104 surrounding the insulating film 103. The insulating film 103 is separated from the second conductive side electrode 104 via a separation region 105 provided so as to surround the periphery thereof, and the second conductive side electrode 104 is provided via a separation region 106 provided so as to surround the periphery thereof. Thus, it is separated from the insulating film 107 provided on the outer edge. The semicircular heads 100a and 100b of the insulating film 103 are connected to the insulating film 107 on the outer edge via a connecting portion 107a. That is, the inner insulating film 103 and the outer insulating film 107 are continuously provided. Further, as shown in FIG. 7C, the outer insulating film 107 is connected by an insulating film 95 on the first conductive side electrode 94 side and an insulating film 108 provided on the outer end of the semiconductor light emitting element 1. Yes.
図７（ｂ）は、第１導電側電極の側から、第１導電側電極が接続された第１導電型半導体層の表面を平面視した平面模式図である。
図７（ｂ）に示す配置例では、図７（ａ）に示す第２導電側電極１０４と絶縁膜１０３の配置に対して、電極と絶縁膜の配置が逆となっている。すなわち、半円盤状の半円頭部９１ａ，９１ｂと、長枝状の枝部９２ａ，９２ｂ，９２ｃと、半円頭部９１ａ，９１ｂと枝部９２ａ，９２ｂ，９２ｃを連絡する連絡部９３とからなる第１導電側電極９４を有し、その第１導電側電極９４を囲む絶縁膜９５を有する例である。絶縁膜９５は、離間領域９６を介して第１導電側電極９４と離間されている。半円頭部９１ａ，９１ｂは、半導体発光素子の外部と電気的に接続するためのパッド電極であり、枝部９２ａ，９２ｂ，９２ｃは、半導体発光部１０９（図７（ｃ）参照）の全体に電流が流れるように第１導電型半導体層１０９ａ（図７（ｃ）参照）の表面で電流を広げるための延伸電極である。このように、パッド電極（半円頭部９１ａ，９１ｂ）と、延伸電極（枝部９２ａ，９２ｂ，９２ｃ）の両方をあわせて第１導電側電極９４と称しているが、少なくともパッド電極（半円頭部９１ａ，９１ｂ）が第１導電側電極であればよく、延伸電極（枝部９２ａ，９２ｂ，９２ｃ）は設けなくてもよい。
FIG. 7B is a schematic plan view of the surface of the first conductive type semiconductor layer to which the first conductive side electrode is connected, as viewed from the first conductive side electrode side.
In the arrangement example shown in FIG. 7B, the arrangement of the electrode and the insulating film is opposite to the arrangement of the second conductive side electrode 104 and the insulating film 103 shown in FIG. That is, the semicircular heads 91a and 91b, the long branch parts 92a, 92b, and 92c, and the connecting part 93 that connects the semicircular head parts 91a and 91b and the branch parts 92a, 92b, and 92c, This is an example having a first conductive side electrode 94 made of and an insulating film 95 surrounding the first conductive side electrode 94. The insulating film 95 is separated from the first conductive side electrode 94 through the separation region 96. The semicircular heads 91a and 91b are pad electrodes for electrical connection to the outside of the semiconductor light emitting element, and the branch portions 92a, 92b and 92c are the entire semiconductor light emitting unit 109 (see FIG. 7C). This is an extended electrode for spreading the current on the surface of the first conductive semiconductor layer 109a (see FIG. 7C) so that a current flows through the first conductive semiconductor layer 109a. As described above, both the pad electrode (semicircular heads 91a, 91b) and the extended electrode (branches 92a, 92b, 92c) are collectively referred to as the first conductive side electrode 94. The circular heads 91a, 91b) may be the first conductive side electrodes, and the extension electrodes (branches 92a, 92b, 92c) may not be provided.
次に、図７（ｃ）は、図７（ａ）に示すＤ−Ｄ´線における矢視断面模式図である。
図７（ｃ）に示すとおり、第１導電側電極９４と、第２導電側電極１０４とは、第１導電側電極９４の側から第１導電型半導体層１０９ａ、発光層１０９ｂおよび第２導電型半導体層１０９ｃの順で積層されて構成された半導体発光部１０９を挟んで、半導体発光素子を平面視して（図７（ａ）の紙面上方から見て）交互に配置されている。また、第２導電側電極１０４と絶縁膜１０３の外側には、これらの第２導電側電極１０４と絶縁膜１０３に接して、金属材料または合金材料からなるメタライズ層１１０が連続して設けられ、メタライズ層１１０の外側には基板１１１、さらに基板１１１の外側に裏面メタライズ層１１２が設けられている。さらに、第２導電側電極１０４と絶縁膜１０３の間の離間領域１０５、および第２導電側電極１０４と絶縁膜１０７との間の離間領域１０６には、メタライズ層１１０を形成する金属材料または合金材料が充填されている。
Next, FIG.7 (c) is a cross-sectional schematic diagram in the DD 'line shown to Fig.7 (a).
As shown in FIG. 7C, the first conductive side electrode 94 and the second conductive side electrode 104 are the first conductive type semiconductor layer 109a, the light emitting layer 109b, and the second conductive side from the first conductive side electrode 94 side. The semiconductor light emitting elements are alternately arranged in plan view (viewed from above in FIG. 7A) with the semiconductor light emitting portions 109 formed by stacking the type semiconductor layers 109c in order. Further, on the outside of the second conductive side electrode 104 and the insulating film 103, a metallized layer 110 made of a metal material or an alloy material is continuously provided in contact with the second conductive side electrode 104 and the insulating film 103, A substrate 111 is provided outside the metallized layer 110, and a back metallized layer 112 is provided outside the substrate 111. Further, in the separation region 105 between the second conductive side electrode 104 and the insulating film 103 and the separation region 106 between the second conductive side electrode 104 and the insulating film 107, a metal material or an alloy that forms the metallized layer 110 The material is filled.
また、図７（ａ）〜（ｃ）に示す電極と絶縁膜の配置例は、第１導電側電極９４と絶縁膜９５との間に離間領域９６を設けた例であるが、本発明の半導体発光素子では、第２導電側電極１０４と絶縁膜１０３，１０７の間に離間領域１０５，１０６を設けた構成であれば、図７（ｄ）に示すように、第１導電側電極９４と絶縁膜９５との間に離間領域を設けなくてもよい。 7A to 7C are examples in which the separation region 96 is provided between the first conductive side electrode 94 and the insulating film 95, but the arrangement example of the electrode and the insulating film shown in FIGS. In the semiconductor light emitting device, if the separated regions 105 and 106 are provided between the second conductive side electrode 104 and the insulating films 103 and 107, as shown in FIG. A separation region may not be provided between the insulating film 95 and the insulating film 95.
図７（ｄ）は、第１導電側電極９４と絶縁膜９５との間に離間領域を設けない配置例について説明する図である。
この図７（ｄ）に示す配置例では、第１導電側電極９４と絶縁膜９５との間に離間領域が設けられていない、または、第１導電側電極９４と絶縁膜９５とが接して設けられている、ことを除いて、第１導電側電極９４、絶縁膜９５、絶縁膜１０３、第２導電側電極１０４、離間領域１０５、離間領域１０６、絶縁膜１０７、絶縁膜１０８、メタライズ層１１０、基板１１１、裏面メタライズ層１１２の配置および構成は、図７（ａ）〜（ｃ）に示す電極と絶縁膜の配置例と同じである。すなわち、図７（ｄ）に示すとおり、第１導電側電極９４と、その第１導電側電極９４を離間領域を介さずに、絶縁膜９５が囲み、絶縁膜９５は、第２導電側電極１０４の側の絶縁膜１０７と半導体発光素子の外側端に設けられた絶縁膜１０８によって連絡されている。また、第１導電側電極９４と、第２導電側電極１０４とは、半導体発光部１０９を挟んで、半導体発光素子を平面視して交互に配置されている。また、第２導電側電極１０４の側で、第２導電側電極１０４と、絶縁膜１０３とは、絶縁膜１０３を囲んで設けられた離間領域１０５によって離間され、第２導電側電極１０４は、その周囲を囲んで設けられた離間領域１０６を介して、外側縁に設けられた絶縁膜１０７と離間されている。そして、第２導電側電極１０４と絶縁膜１０３の間の離間領域１０５、および第２導電側電極１０４と絶縁膜１０７との間の離間領域１０６には、メタライズ層１１０を形成する金属材料または合金材料が充填されている。また、図７（ｄ）に示すように、第１導電側電極９４と絶縁膜９５とが接して設けられている場合、図６（ｂ）と同様に、絶縁膜９５は、第１導電側電極９４の一部を覆うとともに、パッド電極（図７（ｂ）の半円頭部９１ａ，９１ｂ）の一部を露出するようにして、第１導電側電極９４の上に設けられる。これにより、第１導電側電極９４の密着性が向上し、剥がれを防止することができる。
FIG. 7D is a view for explaining an arrangement example in which no separation region is provided between the first conductive side electrode 94 and the insulating film 95.
In the arrangement example shown in FIG. 7D, no separation region is provided between the first conductive side electrode 94 and the insulating film 95, or the first conductive side electrode 94 and the insulating film 95 are in contact with each other. Except for being provided, the first conductive side electrode 94, the insulating film 95, the insulating film 103, the second conductive side electrode 104, the separation region 105, the separation region 106, the insulation film 107, the insulation film 108, and the metallized layer 110, the substrate 111, and the back surface metallization layer 112 are arranged and configured in the same manner as in the arrangement example of the electrode and the insulating film shown in FIGS. That is, as shown in FIG. 7 (d), the first conductive side electrode 94 and the first conductive side electrode 94 are surrounded by the insulating film 95 without the separation region, and the insulating film 95 is formed by the second conductive side electrode 94. The insulating film 107 on the side of 104 is connected to the insulating film 108 provided on the outer end of the semiconductor light emitting element. Further, the first conductive side electrode 94 and the second conductive side electrode 104 are alternately arranged with the semiconductor light emitting unit 109 interposed therebetween in a plan view. Further, on the second conductive side electrode 104 side, the second conductive side electrode 104 and the insulating film 103 are separated by a separation region 105 provided so as to surround the insulating film 103, and the second conductive side electrode 104 is It is separated from the insulating film 107 provided on the outer edge via a separation region 106 provided surrounding the periphery. In the separation region 105 between the second conductive side electrode 104 and the insulating film 103 and the separation region 106 between the second conductive side electrode 104 and the insulating film 107, a metal material or an alloy forming the metallized layer 110 is formed. The material is filled. Further, as shown in FIG. 7D, when the first conductive side electrode 94 and the insulating film 95 are provided in contact with each other, the insulating film 95 is formed on the first conductive side as in FIG. The electrode 94 is provided on the first conductive side electrode 94 so as to cover a part of the electrode 94 and expose a part of the pad electrodes (semicircular heads 91a and 91b in FIG. 7B). Thereby, the adhesiveness of the 1st electroconductive side electrode 94 improves, and it can prevent peeling.
なお、図７（ａ）〜（ｃ）に示す配置例、および図７（ｄ）に示す配置例では、離間領域１０５は、第２導電型半導体層１０９ｃと、第２導電側電極１０４と、絶縁膜１０３と、基板との間で密閉されていれば、離間領域１０５は空隙で構成されていてもよい。 In the arrangement example shown in FIGS. 7A to 7C and the arrangement example shown in FIG. 7D, the separation region 105 includes the second conductive semiconductor layer 109c, the second conductive side electrode 104, As long as the insulating film 103 and the substrate are hermetically sealed, the separation region 105 may be formed of a gap.
図７（ａ）〜（ｃ）および図７（ｄ）に示す電極と絶縁膜の配置を有する半導体発光素子では、離間領域１０６，１０５を設けることによって、接合や実装時の高温での加熱処理による熱膨張に起因して形成され易い絶縁膜のひび割れや欠けに起因するマイグレーションを抑制することができる。そのため、基板側あるいは実装する側に、マイグレーションを起こし易いＡｇやＡｌ等で電極（第２導電側電極１０４）を形成することができ、これらのＡｇやＡｌ等からなる電極によって、半導体発光部１０９からの光を良好に反射することができるため高い光取り出し効率を得ることが可能となる。特に、半導体発光部１０９の第２導電側電極１０４の側の第２導電型半導体層１０９ｃがｐ型半導体で構成され、ｐ側の電極となる第２導電側電極１０４を構成する電極材料としてマイグレーションを起こし易いＡｇやＡｌ等を用いる場合、これらのＡｇやＡｌ等がマイグレーションによって、絶縁膜１０７、１０８、９５を介して第１導電側電極９４に移行して素子のリークや破壊を引き起こすことを防止するために有効である。 In the semiconductor light emitting device having the arrangement of the electrode and the insulating film shown in FIGS. 7A to 7C and FIG. 7D, heat treatment at a high temperature during bonding or mounting is provided by providing the separation regions 106 and 105. It is possible to suppress migration due to cracks or chipping of the insulating film which is easily formed due to thermal expansion due to the above. Therefore, an electrode (second conductive side electrode 104) that is likely to cause migration can be formed on the substrate side or the mounting side, and the semiconductor light emitting unit 109 can be formed by these electrodes made of Ag, Al, or the like. Therefore, it is possible to obtain a high light extraction efficiency. In particular, the second conductive type semiconductor layer 109c on the second conductive side electrode 104 side of the semiconductor light emitting unit 109 is formed of a p-type semiconductor, and migration is performed as an electrode material that constitutes the second conductive side electrode 104 that becomes the p side electrode. In the case of using Ag, Al, or the like that is liable to cause oxidization, the migration of Ag, Al, or the like to the first conductive side electrode 94 through the insulating films 107, 108, 95 due to migration may cause element leakage or destruction. It is effective to prevent.
また、第１導電側電極９４と第２導電側電極１０４が、半導体発光素子を平面視して（図７（ａ）の紙面上方から見て）交互に配置されているとともに、図７（ｂ）に示すとおり、第２導電側電極１０４の側の内側の絶縁膜１０３と、外側の絶縁膜１０７とを連続して設けることによって、第１導電側電極９４のパッド電極となる半円頭部９１ａ，９１ｂを、半導体発光素子を第１導電側電極９４の側から平面視して半導体発光素子の外周近傍に設けることができる。そのため、比較的簡素な配線で半導体発光素子を実装することが可能となる。例えば、半導体発光素子の外周側からワイヤ等の配線を短いワイヤ長で他の電極部分等を横切らずに容易にパッド電極に接続することができる。また、第１導電側電極９４のパッド電極となる半円頭部９１ａ，９１ｂを半導体発光素子の外周近傍に設けることができるため、半導体発光素子の外周側とワイヤをパッド電極に接続する際の光の遮りを最小限にすることができる。 Further, the first conductive side electrodes 94 and the second conductive side electrodes 104 are alternately arranged in a plan view of the semiconductor light emitting element (as viewed from above the sheet of FIG. 7A), and FIG. ), The semicircular head which becomes the pad electrode of the first conductive side electrode 94 by continuously providing the inner insulating film 103 on the second conductive side electrode 104 side and the outer insulating film 107. 91a and 91b can be provided in the vicinity of the outer periphery of the semiconductor light emitting element when the semiconductor light emitting element is viewed in plan from the first conductive side electrode 94 side. Therefore, it is possible to mount the semiconductor light emitting element with relatively simple wiring. For example, wiring such as a wire can be easily connected to the pad electrode from the outer peripheral side of the semiconductor light emitting element with a short wire length without crossing other electrode portions. In addition, since the semicircular heads 91a and 91b serving as the pad electrodes of the first conductive side electrode 94 can be provided in the vicinity of the outer periphery of the semiconductor light emitting element, the outer periphery side of the semiconductor light emitting element and the wire when connecting the wire to the pad electrode can be provided. Light shielding can be minimized.
さらに、第１導電側電極９４と第２導電側電極１０４が、半導体発光素子を平面視して（図７（ａ）の紙面上方から見て）交互に配置されていることによって、第２導電側電極１０４の側の絶縁膜１０３，１０７は、半導体発光部１０９の内部を伝播する光を反射して漏れを防止し、光取り出し効率の向上に有効である。特に、第２導電側電極１０４の側の絶縁膜１０３，１０７は、その外側にメタライズ層１１０があるため、半導体発光部１０９の第２導電型半導体層１０９ｃ（例えば、窒化物半導体層）と絶縁膜１０３，１０７との間での全反射角が大きくなり、光取出し効率をさらに高めることができる。 Further, the first conductive side electrode 94 and the second conductive side electrode 104 are alternately arranged in a plan view of the semiconductor light emitting element (viewed from above in FIG. 7A), thereby providing the second conductive side electrode. The insulating films 103 and 107 on the side electrode 104 side reflect light propagating through the semiconductor light emitting unit 109 to prevent leakage, and are effective in improving light extraction efficiency. In particular, the insulating films 103 and 107 on the second conductive side electrode 104 side are insulated from the second conductive type semiconductor layer 109c (for example, a nitride semiconductor layer) of the semiconductor light emitting unit 109 because the metallized layer 110 is on the outer side. The total reflection angle between the films 103 and 107 is increased, and the light extraction efficiency can be further increased.
さらに、第１導電側電極９４と第２導電側電極１０４が、半導体発光素子を平面視して（図７（ａ）の紙面上方から見て）交互に配置され、さらに、第２導電側電極１０４が、第１導電側電極９４よりも面積が大きく形成されている。これによって、図７（ｃ）に示すように、第１導電側電極９４と第２導電側電極１０４の間に流れる電流が、交互に配置されている第１導電側電極９４と第２導電側電極１０４の間の半導体発光部１０９内を、矢印Ｙで示すような経路を通って流れ、半導体発光部１０９内を流れる電流を制御することが可能となる。具体的には、第１導電側電極９４に対向する位置にある半導体発光部１０９には電流が流れ難くなり、そこでの発光は比較的弱くなる。これに対し、第２導電側電極１０４に対向する位置にある半導体発光部１０９には電流が流れ易く、そこでの発光が比較的強くなり、第１導電型半導体層１０９ａの側から効率よく光が外部に取り出されるようになる。さらに、図７（ｂ）に示すとおり、第１導電側電極９４と絶縁膜９５とが離間領域９６を介して離間している形態では、この電流の制御が効果的になり、さらに第１導電型半導体層１０９ａの側から効率よく光が外部に取り出されるようになる。 Furthermore, the first conductive side electrode 94 and the second conductive side electrode 104 are alternately arranged in a plan view of the semiconductor light emitting element (viewed from above in FIG. 7A). 104 has a larger area than the first conductive side electrode 94. Thereby, as shown in FIG. 7C, the current flowing between the first conductive side electrode 94 and the second conductive side electrode 104 is alternately arranged between the first conductive side electrode 94 and the second conductive side. It is possible to control the current flowing in the semiconductor light emitting unit 109 by flowing through the semiconductor light emitting unit 109 between the electrodes 104 through the path indicated by the arrow Y. Specifically, it becomes difficult for a current to flow through the semiconductor light emitting unit 109 located at the position facing the first conductive side electrode 94, and the light emission there is relatively weak. On the other hand, a current easily flows through the semiconductor light emitting unit 109 at a position facing the second conductive side electrode 104, and the light emission there is relatively strong, and light is efficiently emitted from the first conductive type semiconductor layer 109a side. It comes out to the outside. Furthermore, as shown in FIG. 7B, in the form in which the first conductive side electrode 94 and the insulating film 95 are separated via the separation region 96, this current control becomes effective, and further the first conductive Light is efficiently extracted to the outside from the type semiconductor layer 109a side.
また、図８は、本発明の半導体発光素子における電極と絶縁膜の配置の他の具体例を示す平面模式図である。
この半導体発光素子５１では、四角形状の平面の中央部を占める大面積の第２導電側電極５３と、第２導電側電極５３を間にして、左右に対向して配置された６個の第１導電側電極５２と、第１導電側電極５２と第２導電側電極５３の間に配設された絶縁膜５４とを有する。
FIG. 8 is a schematic plan view showing another specific example of the arrangement of electrodes and insulating films in the semiconductor light emitting device of the present invention.
In the semiconductor light emitting device 51, six second conductive side electrodes 53 having a large area occupying the center of a rectangular plane and the second conductive side electrodes 53 are arranged opposite to each other on the left and right sides. It has a first conductive side electrode 52 and an insulating film 54 disposed between the first conductive side electrode 52 and the second conductive side electrode 53.
この半導体発光素子５１において、第２導電側電極５３と絶縁膜５４とは、空隙からなる離間領域５５を介して離間して配設されている。 In the semiconductor light emitting device 51, the second conductive side electrode 53 and the insulating film 54 are spaced apart from each other via a separation region 55 formed of a gap.
この半導体発光素子５１においては、電極を実装面側に配置して実装する（フェイスダウン実装）に際して、第２導電側電極５３、絶縁膜５４および第１導電側電極５２の上にメタライズ層を積層し、このメタライズ層を介して接合用基板に接合することによって、素子構造を構成することができる。このとき、第２導電側電極５３と絶縁膜５４とは、空隙からなる離間領域５５を介して離間して配設されているため、接合時の加熱処理等に起因する第２導電側電極５３を構成するＡｇやＡｌのマイグレーションを阻止することができ、絶縁膜５４の電流リークや破壊を防止することができ、また、電極によって、半導体発光部からの光を良好に反射するため高い光取り出し効率を得るために有効である。第１導電側電極５２と、第２導電側電極５３とは、前記第２導電側電極の面積が、前記第１導電側電極の面積よりも大きく形成されている。これによって、電流注入領域の面積を大きくでき、発光効率が向上するとともに、発光による熱の放熱性も向上し、半導体発光素子１の放熱性が改善される。そして、フェイスダウン実装に際しては、この半導体発光素子５１を接合用基板に接合することによって、金属材料または合金材料からなる連続層であるメタライズ層によって、第１導電側電極５２、絶縁膜５４および第２導電側電極５３の上にメタライズ層が配置され、離間領域５５は、絶縁膜５４および第２導電側電極５３と、メタライズ層の間に密閉された空間を形成する。
以上のように、図１〜８を例にとり、いくつかの実施形態を示したが、これらの実施形態に示す構成は、それぞれの構成を組み合わせて用いることも可能であることは言うまでもない。
In the semiconductor light emitting device 51, when the electrodes are arranged and mounted on the mounting surface side (face-down mounting), a metallized layer is laminated on the second conductive side electrode 53, the insulating film 54, and the first conductive side electrode 52. And an element structure can be comprised by joining to a board | substrate for joining via this metallization layer. At this time, since the second conductive side electrode 53 and the insulating film 54 are spaced apart from each other via a separation region 55 formed of a gap, the second conductive side electrode 53 resulting from heat treatment at the time of bonding or the like. Can prevent migration of Ag and Al constituting the light source, can prevent current leakage and destruction of the insulating film 54, and can reflect light from the semiconductor light emitting portion well by the electrode, so that high light extraction is possible. It is effective to obtain efficiency. The first conductive side electrode 52 and the second conductive side electrode 53 are formed such that the area of the second conductive side electrode is larger than the area of the first conductive side electrode. As a result, the area of the current injection region can be increased, the light emission efficiency is improved, the heat dissipation of heat by light emission is also improved, and the heat dissipation of the semiconductor light emitting element 1 is improved. In face-down mounting, the semiconductor light-emitting element 51 is bonded to a bonding substrate, so that the first conductive side electrode 52, the insulating film 54, and the A metallized layer is disposed on the second conductive side electrode 53, and the separation region 55 forms a sealed space between the insulating film 54, the second conductive side electrode 53, and the metallized layer.
As described above, several embodiments have been shown by taking FIGS. 1 to 8 as an example, but it goes without saying that the configurations shown in these embodiments can be used in combination with each other.
次に、本発明の半導体発光素子の製造方法（以下、「本発明の方法」という）について説明する。
本発明の半導体発光素子は、下記の主要工程（１）〜（４）を含む方法によって製造することができる。
（１）第１導電型半導体層と、第２導電型半導体層と、第１導電型半導体層と第２導電型半導体層の間に介設された発光層とを有する半導体発光部を形成する工程１
（２）前記第１導電型半導体層に接続される第１導電側電極を形成する工程２
（３）前記第２導電型半導体層に接続される第２導電側電極を形成する工程３
（４）前記第１導電側電極および前記第２導電側電極の少なくとも１つの電極と、離間領域を介して離間し、前記半導体発光部を被覆する絶縁膜を形成する工程４
本発明の素子を製造する方法は、前記の工程のみに制限されず、必要に応じて、他の工程を行うことができる。例えば、これらの工程（１）〜（４）の他に、基板の洗浄工程、熱処理工程等を前記の（１）〜（４）の前工程、途中の工程または後工程として行うことができる。さらに、本発明の方法において、工程（１）〜（４）において、工程（２）、（３）および（４）を行う順序は、特に限定されず、製造する半導体発光素子の構造および実装形態等に応じて、適宜、選択される。
Next, a method for manufacturing a semiconductor light emitting device of the present invention (hereinafter referred to as “method of the present invention”) will be described.
The semiconductor light emitting device of the present invention can be manufactured by a method including the following main steps (1) to (4).
(1) forming a semiconductor light emitting unit having a first conductive type semiconductor layer, a second conductive type semiconductor layer, and a light emitting layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; Process 1
(2) Step 2 of forming a first conductive side electrode connected to the first conductive type semiconductor layer
(3) Step 3 of forming a second conductive side electrode connected to the second conductive type semiconductor layer
(4) Step 4 of forming an insulating film that is separated from at least one of the first conductive side electrode and the second conductive side electrode through a separation region and covers the semiconductor light emitting unit.
The method for producing the element of the present invention is not limited to the above-described steps, and other steps can be performed as necessary. For example, in addition to these steps (1) to (4), a substrate cleaning step, a heat treatment step, and the like can be performed as the preceding step, the intermediate step, or the subsequent step of the above (1) to (4). Furthermore, in the method of the present invention, the order in which the steps (2), (3) and (4) are performed in the steps (1) to (4) is not particularly limited, and the structure and mounting form of the semiconductor light emitting device to be manufactured It is appropriately selected according to the above.
図９（ａ）〜（ｆ）および図１０（ａ）〜（ｄ）は、本発明の半導体発光素子の製造方法として、窒化物半導体発光素子の製造方法の主要工程１〜４を説明する断面模式図である。
第１導電型半導体層と、第２導電型半導体層と、第１導電型半導体層と第２導電型半導体層の間に介設された発光層とを有する半導体発光部を形成する工程１は、図９（ａ）に示すように、サファイア基板６１の上に、第１導電型半導体層と、発光層および第２導電型半導体層の順に成膜して半導体発光部６５を形成することによって行うことができる。この半導体発光部６５の形成は、洗浄されたサファイア基板６１の上表面に、所要の半導体材料、ドーパントなどを含むガスを供給して、ＭＯＶＰＥ（有機金属気相成長法）、ＨＶＰＥ（ハライド気相成長法）、ＭＢＥ（分子線気相成長法）、ＭＯＭＢＥ（有機金属分子線気相成長法）等の気相成長装置を用いて、気相成長させることにより行うことができる。このとき、形成する導電型半導体層の種類、例えば、ｎ型半導体層、ｐ型半導体層および発光層の各層の層構成および構成材料、層の膜厚等に応じて、供給するガスが含有する半導体材料およびドーパントの成分種、組成等を切り換えては、窒素ガス等の不活性ガスをキャリアガスとして用いてサファイア基板６１上に供給することによって形成することができる。
9 (a) to 9 (f) and FIGS. 10 (a) to 10 (d) are cross-sectional views illustrating main steps 1 to 4 of a method for manufacturing a nitride semiconductor light emitting device as a method for manufacturing a semiconductor light emitting device of the present invention. It is a schematic diagram.
Step 1 of forming a semiconductor light emitting part having a first conductive type semiconductor layer, a second conductive type semiconductor layer, and a light emitting layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer includes: As shown in FIG. 9A, a semiconductor light emitting unit 65 is formed on a sapphire substrate 61 by sequentially forming a first conductive type semiconductor layer, a light emitting layer, and a second conductive type semiconductor layer. It can be carried out. The semiconductor light emitting unit 65 is formed by supplying a gas containing a required semiconductor material, a dopant, and the like to the upper surface of the cleaned sapphire substrate 61, and then moving the MOVPE (metal organic vapor phase epitaxy) or HVPE (halide vapor phase). (Growth method), MBE (molecular beam vapor phase epitaxy), MOMBE (organometallic molecular beam vapor phase epitaxy), and the like, can be performed by vapor phase growth. At this time, the gas to be supplied contains depending on the type of the conductive semiconductor layer to be formed, for example, the layer configuration and constituent materials of each layer of the n-type semiconductor layer, the p-type semiconductor layer, and the light-emitting layer, and the film thickness of the layer The semiconductor material and dopant component species, composition, and the like can be switched by supplying the sapphire substrate 61 using an inert gas such as nitrogen gas as a carrier gas.
次に、半導体発光部６５の第２導電型半導体層に接続される第２導電側電極６６を形成する工程３および第２導電側電極と離間領域を介して離間し、半導体発光部６５を被覆する絶縁膜６７を形成する工程４−１を行う。この工程３および工程４−１は、図９（ｂ）に示すように、半導体発光部６５の第２導電型半導体層の上表面に、レジストを用いて第２導電側電極６６に対応したマスクを形成し、スパッタリング等によって、電極材料、例えば、Ａｇを含む電極材料を積層することによって第２導電側電極６６を形成する。その後、さらに、第２導電側電極６６を覆うようにレジストを用いてマスクを形成し、スパッタリング等によってＳｉＯ２等の絶縁膜材料を積層した後、レジストを除去する。これによって、図９（ｃ）に示すように、第２導電側電極６６と絶縁膜６７との間に空隙６８が配設された構造を形成する。 Next, the step 3 of forming the second conductive side electrode 66 connected to the second conductive type semiconductor layer of the semiconductor light emitting unit 65 and the second conductive side electrode are separated from each other through the separation region, and the semiconductor light emitting unit 65 is covered. Step 4-1 for forming the insulating film 67 to be performed is performed. In Step 3 and Step 4-1, as shown in FIG. 9B, a mask corresponding to the second conductive side electrode 66 is formed on the upper surface of the second conductive type semiconductor layer of the semiconductor light emitting portion 65 using a resist. The second conductive side electrode 66 is formed by stacking an electrode material, for example, an electrode material containing Ag, by sputtering or the like. Thereafter, a mask is formed using a resist so as to cover the second conductive side electrode 66, and an insulating film material such as SiO 2 is laminated by sputtering or the like, and then the resist is removed. As a result, as shown in FIG. 9C, a structure in which a gap 68 is disposed between the second conductive side electrode 66 and the insulating film 67 is formed.
また、この工程３および工程４−１は、半導体発光部６５の上表面の全面にＳｉＯ２等の絶縁膜材料を積層した後、その絶縁性材料の膜上に、絶縁膜６７に対応したマスクを形成し、第２導電側電極６６に対応する部位をウェットエッチングして、エッチング部位にスパッタリング等によって電極材料を積層して第２導電側電極６６を形成する方法によっても行うことができる。 In Step 3 and Step 4-1, after an insulating film material such as SiO2 is laminated on the entire upper surface of the semiconductor light emitting portion 65, a mask corresponding to the insulating film 67 is formed on the insulating material film. Alternatively, the second conductive side electrode 66 can be formed by wet etching a portion corresponding to the second conductive side electrode 66 and laminating an electrode material on the etched portion by sputtering or the like.
次に、図９（ｄ）に示すように、絶縁膜６７と第２導電側電極６６の上部にメタライズ層６９を形成する。これによって、絶縁膜６７と第２導電側電極６６との間の空隙６８が、メタライズ材で充填され、絶縁膜６７と第２導電側電極６６とを離間する離間領域７０が形成される。
一方、図９（ｅ）に示すように、Ｓｉ基板７１を用意し、Ｓｉ基板７１の上表面にメタライズ層７２を形成する。
Next, as shown in FIG. 9D, a metallized layer 69 is formed on the insulating film 67 and the second conductive side electrode 66. As a result, the gap 68 between the insulating film 67 and the second conductive side electrode 66 is filled with the metallized material, and a separation region 70 that separates the insulating film 67 and the second conductive side electrode 66 is formed.
On the other hand, as shown in FIG. 9E, a Si substrate 71 is prepared, and a metallized layer 72 is formed on the upper surface of the Si substrate 71.
次に、図９（ｆ）に示すように、絶縁膜６７と第２導電側電極６６の上部に設けられたメタライズ層６９と、Ｓｉ基板７１上に設けられたメタライズ層７２とを貼り合わせ、加熱して接合する。 Next, as shown in FIG. 9F, the metallized layer 69 provided on the insulating film 67 and the second conductive side electrode 66 and the metallized layer 72 provided on the Si substrate 71 are bonded together. Join by heating.
次に、サファイア基板６１の側からレーザ照射もしくは研磨等を行って、図１０（ａ）に示すように、サファイア基板６１を除去した後、図１０（ｂ）に示すように、露出した半導体発光部６５を化学研磨（ＣＭＰ）する。さらに、研磨面において、半導体発光部６５を挟んで絶縁膜６７と対向する部位に、半導体発光部６５を平面視して第１導電側電極７３と第２導電側電極６６とが相互に重なり合わないように、第１導電側電極７３が形成されるように、マスクを形成し、スパッタリング等によって、電極材料を積層して、半導体発光部６５の上に、図１０（ｃ）に示すように、第１導電側電極７３を形成する（工程２）。ここでマスクを設けた部分、つまり第１導電側電極７３が形成されていない領域をＲＩＥ（反応性イオンエッチング）により穿孔して第１導電側電極７３が設けられていない領域を形成する。この第１導電側電極７３が設けられていない領域を設けることで、光取出しも向上し、特に、第２導電側電極６６で反射した光が効率的に、この領域から取り出されるようになる。さらに、図１０（ｄ）に示すように、第１導電側電極７３が設けられていない半導体発光部６５が露出している面に絶縁膜を形成し、本発明の半導体発光素子を得ることができる。 Next, laser irradiation or polishing is performed from the side of the sapphire substrate 61 to remove the sapphire substrate 61 as shown in FIG. 10A and then expose the exposed semiconductor light emission as shown in FIG. The portion 65 is chemically polished (CMP). Furthermore, the first conductive side electrode 73 and the second conductive side electrode 66 overlap each other in a plan view of the semiconductor light emitting unit 65 at a portion facing the insulating film 67 across the semiconductor light emitting unit 65 on the polished surface. As shown in FIG. 10C, a mask is formed so that the first conductive side electrode 73 is formed, and electrode materials are laminated by sputtering or the like. Then, the first conductive side electrode 73 is formed (step 2). Here, a portion where the mask is provided, that is, a region where the first conductive side electrode 73 is not formed is drilled by RIE (reactive ion etching) to form a region where the first conductive side electrode 73 is not provided. By providing a region in which the first conductive side electrode 73 is not provided, light extraction is also improved. In particular, light reflected by the second conductive side electrode 66 is efficiently extracted from this region. Furthermore, as shown in FIG. 10D, an insulating film is formed on the exposed surface of the semiconductor light emitting portion 65 where the first conductive side electrode 73 is not provided, thereby obtaining the semiconductor light emitting device of the present invention. it can.
以下、本発明の実施例により本発明をより具体的に説明するが、本発明はこの実施例に限定されるものではない。 Hereinafter, the present invention will be described in more detail by way of examples of the present invention, but the present invention is not limited to these examples.
実施例
前記図１に示す構造の半導体発光素子を下記の仕様で作製した。
半導体発光部５
第１導電型半導体層２：ＧａＮ層と、Ｓｉをｎ型不純物として含むＧａＮ層との積層構造
発光層４：ＩｎＧａＮ層（厚さ：２ｎｍ）と、ＧａＮ層（厚さ：４ｎｍ）とを、交互に２０組み繰り返し積層した多重量子井戸構造
第２導電側半導体層３：Ｍｇをｐ型不純物として含むＧａＮ層と、Ｍｇをｐ型不純物として含むドープＡｌＧａＮ層との積層構造
ｎ電極（第１導電側電極６）：Ｔｉ（２０ｎｍ）／Ｐｔ（２００ｎｍ）／Ａｕ（１０００ｎｍ）
ｐ電極（第２導電側電極７）：Ａｇ（１００ｎｍ）／Ｎｉ（１００ｎｍ）／Ｔｉ（１００ｎｍ）／Ｐｔ（１００ｎｍ）
絶縁膜１１ｂ：ＳｉＯ２（４００ｎｍ）膜
ｐ電極（第２導電側電極７）と絶縁膜１１ｂとの間隔：５μｍ
接合用基板９：Ｓｉ基板
メタライズ層８（ｐ電極側から）：Ｔｉ（１００ｎｍ）／Ｐｔ（１００ｎｍ）／Ａｕ（３００ｎｍ）／Ｓｎ（３０００ｎｍ）／Ａｕ（１００ｎｍ）／Ｐｄ（３００ｎｍ）／Ｐｔ（１００ｎｍ）／ＴｉＳｉ２（１０ｎｍ）
裏面メタライズ層１０：ＴｉＳｉ２（１０ｎｍ）／Ｐｔ（１００ｎｍ）／Ｐｄ（３００ｎｍ）
Example A semiconductor light-emitting device having the structure shown in FIG. 1 was fabricated according to the following specifications.
Semiconductor light emitting unit 5
First conductivity type semiconductor layer 2: Laminated structure of GaN layer and GaN layer containing Si as n-type impurity Light emitting layer 4: InGaN layer (thickness: 2 nm) and GaN layer (thickness: 4 nm) Multiple quantum well structure in which 20 sets are alternately stacked. Second conductive side semiconductor layer 3: Stacked structure of a GaN layer containing Mg as a p-type impurity and a doped AlGaN layer containing Mg as a p-type impurity n electrode (first conductivity Side electrode 6): Ti (20 nm) / Pt (200 nm) / Au (1000 nm)
P electrode (second conductive side electrode 7): Ag (100 nm) / Ni (100 nm) / Ti (100 nm) / Pt (100 nm)
Insulating film 11b: SiO2 (400 nm) film Distance between p-electrode (second conductive side electrode 7) and insulating film 11b: 5 [mu] m
Bonding substrate 9: Si substrate Metallized layer 8 (from the p-electrode side): Ti (100 nm) / Pt (100 nm) / Au (300 nm) / Sn (3000 nm) / Au (100 nm) / Pd (300 nm) / Pt (100 nm) ) / TiSi 2 (10 nm)
Back surface metallized layer 10: TiSi 2 (10 nm) / Pt (100 nm) / Pd (300 nm)
ここで、比較例として、第２導電側電極と絶縁膜との間に離間領域を設けずに作製した半導体発光素子について、光学顕微鏡で観察した。その結果、図１１の写真に示すように、第２導電側電極８１と接する絶縁膜８２にひび割れがあった。これに対して、本発明の実施例で得られた半導体発光素子においては、第２導電側電極と離間領域を解して離間された絶縁膜にひび割れがなかった。 Here, as a comparative example, a semiconductor light emitting device manufactured without providing a separation region between the second conductive side electrode and the insulating film was observed with an optical microscope. As a result, as shown in the photograph of FIG. 11, the insulating film 82 in contact with the second conductive side electrode 81 was cracked. On the other hand, in the semiconductor light emitting device obtained in the example of the present invention, there was no crack in the insulating film spaced apart from the second conductive side electrode.
１ 半導体発光素子
２ 第１導電型半導体層
３ 第２導電型半導体層
４ 発光層
５ 半導体発光部
６ 第１導電側電極
７ 第２導電側電極
８ メタライズ層
９ 基板
１０ 裏面メタライズ層
１１ａ，１１ｂ 絶縁膜
１２ 離間領域
２１ 電極
２２，２２ａ，２２ｂ 絶縁膜
２３，２３ａ，２３ｂ 離間領域
２４ メタライズ層
２５ 半導体発光部
３０ａ，３０ｂ 円頭部
３１ 連絡部
３２ａ，３２ｂ 矩形部
３３ 第１導電側電極
３４ａ，３４ｂ 第１導電側電極
３５ａ，３５ｂ 離間領域
３６ 絶縁膜
３７ａ，３７ｂ 円頭部
３８ａ，３８ｂ 矩形部
３９ａ，３９ｂ，３９ｃ 絶縁膜
４０ 第２導電側電極
４１ａ，４１ｂ，４１ｃ 離間領域
４２ 絶縁膜
４３ 半導体発光部
４３ａ 第１導電型半導体層
４３ｂ 発光層
４３ｃ 第２導電型半導体層
４４ａ メタライズ層
４４ｂ 基板
４４ｃ 裏面メタライズ層
４５ 連絡部
５１ 半導体発光素子
５２ 第１導電側電極
５３ 第２導電側電極
５４ 絶縁膜
５５ａ，５５ｂ 離間領域
９１ａ，９１ｂ 半円頭部
９２ａ，９２ｂ，９２ｃ 枝部
９３ 連絡部
９４ 第１導電側電極
９５ 絶縁膜
９６ 離間領域
１００ａ，１００ｂ 半円頭部
１０１ａ，１０１ｂ，１０１ｃ 枝部
１０２ 連絡部
１０３ 絶縁膜
１０４ 第２導電側電極
１０５ 離間領域
１０６ 離間領域
１０７ 絶縁膜
１０７ａ 連結部
１０８ 絶縁膜
１０９ 半導体発光部
１０９ａ 第１導電型半導体層
１０９ｂ 発光層
１０９ｃ 第２導電型半導体層
１１０ メタライズ層
１１１ 基板
１１２ 裏面メタライズ層
DESCRIPTION OF SYMBOLS 1 Semiconductor light emitting element 2 1st conductivity type semiconductor layer 3 2nd conductivity type semiconductor layer 4 Light emission layer 5 Semiconductor light emission part 6 1st conductivity side electrode 7 2nd conductivity side electrode 8 Metallization layer 9 Substrate 10 Back surface metallization layer 11a, 11b Insulation Membrane 12 Spacing region 21 Electrode 22, 22a, 22b Insulating film 23, 23a, 23b Separating region 24 Metallized layer 25 Semiconductor light emitting portion 30a, 30b Round head 31 Connecting portion 32a, 32b Rectangular portion 33 First conductive side electrode 34a, 34b First conductive side electrode 35a, 35b Separation region 36 Insulating film 37a, 37b Round head 38a, 38b Rectangular portion 39a, 39b, 39c Insulating film 40 Second conductive side electrode 41a, 41b, 41c Separation region 42 Insulating film 43 Semiconductor light emitting Part 43a First conductive semiconductor layer 43b Light emitting layer 43c Second conductive semiconductor layer 44a Metallic Layer 44b Substrate 44c Back surface metallized layer 45 Contact portion 51 Semiconductor light emitting element 52 First conductive side electrode 53 Second conductive side electrode 54 Insulating film 55a, 55b Separation region 91a, 91b Semicircular head 92a, 92b, 92c Branch portion 93 Contact Part 94 First conductive side electrode 95 Insulating film 96 Separating area 100a, 100b Semicircular heads 101a, 101b, 101c Branch part 102 Connecting part 103 Insulating film 104 Second conductive side electrode 105 Separating area 106 Separating area 107 Insulating film 107a Connection Part 108 Insulating film 109 Semiconductor light emitting part 109a First conductive type semiconductor layer 109b Light emitting layer 109c Second conductive type semiconductor layer 110 Metallized layer 111 Substrate 112 Back surface metallized layer
Claims (6)
前記半導体発光部を挟んで、前記第１導電側電極が前記第１導電型半導体層の外側に設けられ、前記第２導電側電極が前記第２導電側半導体層の外側に設けられ、前記半導体発光部を平面視して前記第１導電側電極と前記第２導電側電極とが交互に配置され、
前記第２導電側電極と、前記半導体発光部を被覆する絶縁膜とが、離間領域を介して離間して配設され、
前記第２導電側電極および前記絶縁膜の外側に金属材料または合金材料からなる連続層が設けられ、前記離間領域には、空隙または前記金属材料または合金材料からなる層が設けられていることを特徴とする半導体発光素子。 A semiconductor light emitting unit having a first conductive type semiconductor layer, a second conductive type semiconductor layer, and a light emitting layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; and the first conductive type A semiconductor light emitting device comprising: a first conductive side electrode connected to a type semiconductor layer; and a second conductive side electrode connected to the second conductive type semiconductor layer,
The first conductive side electrode is provided outside the first conductive type semiconductor layer, the second conductive side electrode is provided outside the second conductive side semiconductor layer, and the semiconductor light emitting unit is interposed therebetween. The first conductive side electrode and the second conductive side electrode are alternately arranged in plan view of the light emitting part ,
The second conductive side electrode and the insulating film covering the semiconductor light emitting unit are disposed apart via a separation region,
A continuous layer made of a metal material or an alloy material is provided outside the second conductive side electrode and the insulating film, and a gap or a layer made of the metal material or the alloy material is provided in the separation region. A semiconductor light emitting device characterized.
前記第１導電型半導体層に接続される第１導電側電極を形成する工程２と、
前記第２導電型半導体層に接続される第２導電側電極を形成する工程３と、
前記第２導電側電極と、前記半導体発光部を被覆する絶縁膜とを、離間領域を介して離間して形成する工程４と、
前記第２導電側電極および前記絶縁膜の外側に金属材料または合金材料からなる連続層が形成され、前記離間領域には、空隙または前記金属材料または合金材料からなる層が形成される工程と、を含み、
前記工程２及び前記工程３において、前記半導体発光部を挟んで、前記第１導電側電極が前記第１導電型半導体層の外側に設けられ、前記第２導電側電極が前記第２導電側半導体層の外側に設けられ、前記半導体発光部を平面視して前記第１導電側電極と前記第２導電側電極とが交互に配置されることを特徴とする半導体発光素子の製造方法。 Forming a semiconductor light emitting part having a first conductive type semiconductor layer, a second conductive type semiconductor layer, and a light emitting layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; ,
Forming a first conductive side electrode connected to the first conductive type semiconductor layer; and
Forming a second conductive side electrode connected to the second conductive type semiconductor layer; and
Forming the second conductive side electrode and the insulating film covering the semiconductor light-emitting portion separately from each other via a separation region;
A step of forming a continuous layer made of a metal material or an alloy material outside the second conductive side electrode and the insulating film, and forming a gap or a layer made of the metal material or the alloy material in the separation region; only including,
In the step 2 and the step 3, the first conductive side electrode is provided outside the first conductive type semiconductor layer with the semiconductor light emitting portion interposed therebetween, and the second conductive side electrode is the second conductive side semiconductor. A method of manufacturing a semiconductor light emitting element, wherein the first light emitting side electrode and the second conductive side electrode are alternately arranged in a plan view of the semiconductor light emitting unit .
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| JP2008165134A JP5211887B2 (en) | 2007-07-03 | 2008-06-24 | Semiconductor light emitting device and manufacturing method thereof |
| US12/166,940 US8410510B2 (en) | 2007-07-03 | 2008-07-02 | Semiconductor light emitting device and method for fabricating the same |
| KR1020080063805A KR101507610B1 (en) | 2007-07-03 | 2008-07-02 | Semiconductor luminescent element and mnaufacturing method thereof |
| TW97125072A TWI423469B (en) | 2007-07-03 | 2008-07-03 | Semiconductor light emitting element and manufacturing method thereof |
| US13/777,700 US8916401B2 (en) | 2007-07-03 | 2013-02-26 | Method for fabricating semiconductor light emitting device |
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| JP5181758B2 (en) * | 2008-03-19 | 2013-04-10 | 日亜化学工業株式会社 | Semiconductor light emitting device and manufacturing method thereof |
| JP4583487B2 (en) | 2009-02-10 | 2010-11-17 | Ｄｏｗａエレクトロニクス株式会社 | Semiconductor light emitting device and manufacturing method thereof |
| JP4871967B2 (en) * | 2009-02-10 | 2012-02-08 | Ｄｏｗａエレクトロニクス株式会社 | Semiconductor light emitting device and manufacturing method thereof |
| JP5304662B2 (en) * | 2009-02-18 | 2013-10-02 | 日立電線株式会社 | Light emitting element |
| JP5298927B2 (en) * | 2009-02-18 | 2013-09-25 | 日立電線株式会社 | Light emitting element |
| JP5560674B2 (en) * | 2009-11-27 | 2014-07-30 | 日亜化学工業株式会社 | Semiconductor light emitting device |
| JP2011119491A (en) * | 2009-12-04 | 2011-06-16 | Showa Denko Kk | Semiconductor light-emitting element, electronic apparatus, and light-emitting device |
| KR101719623B1 (en) * | 2010-09-07 | 2017-03-24 | 엘지이노텍 주식회사 | Light emitting diode |
| KR101694175B1 (en) * | 2010-10-29 | 2017-01-17 | 엘지이노텍 주식회사 | Light emitting device, Light emitting device package and Lighting system |
| JP5598349B2 (en) * | 2011-01-26 | 2014-10-01 | 日亜化学工業株式会社 | Light emitting element |
| JP5899734B2 (en) * | 2011-09-16 | 2016-04-06 | 日亜化学工業株式会社 | Light emitting device |
| JP2014170815A (en) * | 2013-03-01 | 2014-09-18 | Ushio Inc | LED element |
| JP5818031B2 (en) * | 2013-03-21 | 2015-11-18 | ウシオ電機株式会社 | LED element |
| JP2016195187A (en) * | 2015-03-31 | 2016-11-17 | ウシオ電機株式会社 | Semiconductor light emitting element |
| JP2019114650A (en) | 2017-12-22 | 2019-07-11 | Ｄｏｗａエレクトロニクス株式会社 | Semiconductor light-emitting element and manufacturing method thereof |
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