JP5209482B2 - 酸化処理方法 - Google Patents
酸化処理方法 Download PDFInfo
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- JP5209482B2 JP5209482B2 JP2008532935A JP2008532935A JP5209482B2 JP 5209482 B2 JP5209482 B2 JP 5209482B2 JP 2008532935 A JP2008532935 A JP 2008532935A JP 2008532935 A JP2008532935 A JP 2008532935A JP 5209482 B2 JP5209482 B2 JP 5209482B2
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- oxidation
- partition plate
- plasma
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- oxidation treatment
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- 230000003647 oxidation Effects 0.000 title claims description 115
- 238000007254 oxidation reaction Methods 0.000 title claims description 115
- 238000000034 method Methods 0.000 title claims description 39
- 239000000758 substrate Substances 0.000 claims description 52
- 238000005192 partition Methods 0.000 claims description 50
- 238000011282 treatment Methods 0.000 claims description 40
- 150000002500 ions Chemical class 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 230000001590 oxidative effect Effects 0.000 claims description 8
- 239000010408 film Substances 0.000 description 45
- 239000010410 layer Substances 0.000 description 39
- 238000010884 ion-beam technique Methods 0.000 description 13
- 239000001301 oxygen Substances 0.000 description 13
- 229910052760 oxygen Inorganic materials 0.000 description 13
- 230000008569 process Effects 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 10
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 9
- 229910001882 dioxygen Inorganic materials 0.000 description 9
- 230000005294 ferromagnetic effect Effects 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000008859 change Effects 0.000 description 8
- 238000000605 extraction Methods 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 239000004575 stone Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 3
- 229910003321 CoFe Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- -1 oxygen ions Chemical class 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000005291 magnetic effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
Description
前記隔壁板にゼロの電圧を印加してラジカルを主とする活性種で酸化処理を行った後、負の電圧を印加して、正イオンを主とした活性種により酸化処理を行うことを特徴とする。
本発明においては、酸化性ガスとは、O2、O3等のガス又はこれらを含む、例えば,N2ガスとの混合ガスのことである。
Claims (2)
- プラズマ生成室と基板処理室とを多数の貫通孔を有する隔壁板を介して連結し、酸化性ガスを前記プラズマ生成室に導入してプラズマを発生させて、生成した活性種を前記基板処理室の基板上に導き、基板表面に酸化層を形成する酸化処理方法であって、
前記隔壁板にゼロの電圧を印加してラジカルを主とする活性種で酸化処理を行った後、負の電圧を印加して、正イオンを主とした活性種により酸化処理を行うことを特徴とする酸化処理方法。 - 前記基板表面は金属膜であることを特徴とする請求項1に記載の酸化処理方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008532935A JP5209482B2 (ja) | 2007-02-09 | 2008-02-04 | 酸化処理方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007030056 | 2007-02-09 | ||
JP2007030056 | 2007-02-09 | ||
JP2008532935A JP5209482B2 (ja) | 2007-02-09 | 2008-02-04 | 酸化処理方法 |
PCT/JP2008/051753 WO2008096700A1 (ja) | 2007-02-09 | 2008-02-04 | 酸化処理方法及び酸化処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2008096700A1 JPWO2008096700A1 (ja) | 2010-05-20 |
JP5209482B2 true JP5209482B2 (ja) | 2013-06-12 |
Family
ID=39681610
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008532935A Active JP5209482B2 (ja) | 2007-02-09 | 2008-02-04 | 酸化処理方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US20090004884A1 (ja) |
EP (1) | EP2053644A1 (ja) |
JP (1) | JP5209482B2 (ja) |
KR (1) | KR20080096771A (ja) |
CN (1) | CN101542694A (ja) |
TW (1) | TWI438840B (ja) |
WO (1) | WO2008096700A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7994892B2 (en) * | 2007-06-21 | 2011-08-09 | Jpa Inc. | Oxidative opening switch assembly and methods |
WO2011081203A1 (ja) * | 2009-12-28 | 2011-07-07 | キヤノンアネルバ株式会社 | 磁気抵抗素子の製造方法 |
JP5388306B2 (ja) * | 2010-04-13 | 2014-01-15 | 富士フイルム株式会社 | プラズマ酸化方法及びプラズマ酸化装置 |
KR102152811B1 (ko) | 2013-11-06 | 2020-09-07 | 어플라이드 머티어리얼스, 인코포레이티드 | Dc 바이어스 변조에 의한 입자 발생 억제기 |
US10533252B2 (en) * | 2016-03-31 | 2020-01-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Showerhead, semicondcutor processing apparatus having the same and semiconductor process |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63286570A (ja) * | 1987-05-15 | 1988-11-24 | Nissin Electric Co Ltd | 薄膜形成装置 |
JPH02192489A (ja) * | 1989-01-20 | 1990-07-30 | Nippon Telegr & Teleph Corp <Ntt> | 膜成長装置および成長方法 |
JPH05326452A (ja) * | 1991-06-10 | 1993-12-10 | Kawasaki Steel Corp | プラズマ処理装置及び方法 |
JPH07263353A (ja) * | 1994-03-22 | 1995-10-13 | Mitsubishi Electric Corp | プラズマ処理装置及びプラズマ処理方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58212128A (ja) | 1982-06-03 | 1983-12-09 | Shigeru Minomura | アモルフアス半導体膜の製造方法 |
US4828369A (en) * | 1986-05-28 | 1989-05-09 | Minolta Camera Kabushiki Kaisha | Electrochromic device |
US4950376A (en) * | 1988-06-21 | 1990-08-21 | Agency Of Industrial Science & Technology | Method of gas reaction process control |
JPH05175172A (ja) | 1991-06-04 | 1993-07-13 | Matsushita Electric Ind Co Ltd | アッシング方法およびアッシング装置 |
US5212118A (en) * | 1991-08-09 | 1993-05-18 | Saxena Arjun N | Method for selective chemical vapor deposition of dielectric, semiconductor and conductive films on semiconductor and metallic substrates |
JPH05275350A (ja) | 1992-03-25 | 1993-10-22 | Sharp Corp | 半導体製造装置 |
JP3159097B2 (ja) | 1997-01-10 | 2001-04-23 | 日新電機株式会社 | 成膜方法 |
JP3164019B2 (ja) * | 1997-05-21 | 2001-05-08 | 日本電気株式会社 | 酸化シリコン膜およびその形成方法と成膜装置 |
JP3317209B2 (ja) * | 1997-08-12 | 2002-08-26 | 東京エレクトロンエイ・ティー株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP4614212B2 (ja) | 1998-07-17 | 2011-01-19 | ヤマハ株式会社 | 磁気トンネル接合素子の製造方法 |
JP2000100790A (ja) * | 1998-09-22 | 2000-04-07 | Canon Inc | プラズマ処理装置及びそれを用いた処理方法 |
JP3557493B2 (ja) | 1999-06-08 | 2004-08-25 | Tdk株式会社 | 強磁性トンネル磁気抵抗効果素子の製造方法 |
JP4371543B2 (ja) * | 2000-06-29 | 2009-11-25 | 日本電気株式会社 | リモートプラズマcvd装置及び膜形成方法 |
JP3924483B2 (ja) * | 2001-03-19 | 2007-06-06 | アイピーエス リミテッド | 化学気相蒸着装置 |
JP4073204B2 (ja) * | 2001-11-19 | 2008-04-09 | 株式会社荏原製作所 | エッチング方法 |
US6856916B2 (en) * | 2003-06-13 | 2005-02-15 | Wen-Shing Shyu | Locating system of oxidation/reduction potential of electrolysis water and the constant output method of calibration and compensation thereof |
JP4863151B2 (ja) * | 2003-06-23 | 2012-01-25 | 日本電気株式会社 | 磁気ランダム・アクセス・メモリとその製造方法 |
JP4749787B2 (ja) | 2005-07-22 | 2011-08-17 | 瓜生製作株式会社 | 手持ち式パルスツールにおけるねじの締付角度測定装置 |
-
2008
- 2008-02-04 JP JP2008532935A patent/JP5209482B2/ja active Active
- 2008-02-04 KR KR1020087019365A patent/KR20080096771A/ko not_active Application Discontinuation
- 2008-02-04 EP EP08710732A patent/EP2053644A1/en not_active Withdrawn
- 2008-02-04 WO PCT/JP2008/051753 patent/WO2008096700A1/ja active Application Filing
- 2008-02-04 CN CNA2008800000945A patent/CN101542694A/zh active Pending
- 2008-02-05 TW TW097104640A patent/TWI438840B/zh active
- 2008-08-29 US US12/201,630 patent/US20090004884A1/en not_active Abandoned
-
2012
- 2012-06-22 US US13/530,825 patent/US8435596B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63286570A (ja) * | 1987-05-15 | 1988-11-24 | Nissin Electric Co Ltd | 薄膜形成装置 |
JPH02192489A (ja) * | 1989-01-20 | 1990-07-30 | Nippon Telegr & Teleph Corp <Ntt> | 膜成長装置および成長方法 |
JPH05326452A (ja) * | 1991-06-10 | 1993-12-10 | Kawasaki Steel Corp | プラズマ処理装置及び方法 |
JPH07263353A (ja) * | 1994-03-22 | 1995-10-13 | Mitsubishi Electric Corp | プラズマ処理装置及びプラズマ処理方法 |
Also Published As
Publication number | Publication date |
---|---|
EP2053644A1 (en) | 2009-04-29 |
TW200845207A (en) | 2008-11-16 |
KR20080096771A (ko) | 2008-11-03 |
WO2008096700A1 (ja) | 2008-08-14 |
TWI438840B (zh) | 2014-05-21 |
JPWO2008096700A1 (ja) | 2010-05-20 |
CN101542694A (zh) | 2009-09-23 |
US20120270412A1 (en) | 2012-10-25 |
US8435596B2 (en) | 2013-05-07 |
US20090004884A1 (en) | 2009-01-01 |
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