JP5188110B2 - 回路装置 - Google Patents
回路装置 Download PDFInfo
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- JP5188110B2 JP5188110B2 JP2007169772A JP2007169772A JP5188110B2 JP 5188110 B2 JP5188110 B2 JP 5188110B2 JP 2007169772 A JP2007169772 A JP 2007169772A JP 2007169772 A JP2007169772 A JP 2007169772A JP 5188110 B2 JP5188110 B2 JP 5188110B2
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Description
図1は、実施の形態1に係る回路装置が用いられるインバータモジュールを示す概略図である。図2は、インバータモジュールの構成を示す概略図である。インバータモジュール400には、PWM(Pulse Width Moduration)信号が入力される。インバータモジュール400に入力されるPWM信号は、通常、ロジックレベル(5V)である。インバータモジュール400は、電圧増幅部410および電力増幅部420を備え、5VのPWM信号を500VのPWM信号に電圧および電力増幅し、モータ430を駆動させる。また、3相のモータ430は、U相、V相およびW相の3相が必要である。電圧増幅部410は、U相、V相、W相にそれぞれ対応する昇圧回路412、414、416を有する。電力増幅部420は、U相に対応するパワー素子421、424、V相に対応するパワー素子422、425およびW相に対応するパワー素子423、426を有する。
(ΔVn−ΔVb)×C1=ΔVb×(C2+Cad)・・・(1)
という関係式が成立する。この関係式から、
ΔVb=(C1/(C1+C2+Cad))×ΔVn・・・(2)
という関係式が得られる。回路素子104が受けるノイズはΔVbに比例する。よって、(2)式より、Cadを大きくすることにより、ΔVbを小さくすることができ、ひいては回路素子104の誤動作を防ぐことが可能となる。
上述したキャパシタ62を金属基板20に接続したときの金属基板20の電位抑制効果について、3相インバータモジュールを用いて確認した。具体的には、キャパシタ62の静電容量を9400pF(4700pFのキャパシタを2個使用)とした。比較のため、キャパシタ62を金属基板20に接続しないとき、すなわちフローティングの場合の金属基板20の電位変動について調べた。なお、入力されるPWM信号の振幅を5Vとした。
実施の形態2に係る回路装置の概略構造は、実施の形態1と同様である。ただし、本実施の形態の回路装置では、図3に示した金属基板20に接続されたキャパシタ62の一端は、接地電位ではなく、パワー素子の出力信号と逆相の電位と接続されている。パワー素子の出力信号と逆相の電位は、たとえば、入力信号を増幅する増幅器の途中の段から取り出すことができる。これによれば、パワー素子の出力信号による金属基板20の電位変動がキャパシタ62によって相殺されるため、金属基板20の電位変動をより効果的に抑制することができる。このため、実施の形態1の構成に比べてキャパシタ62の静電容量を小さくても、十分なノイズ低減効果を得ることができる。
図3に示したキャパシタ62の一端をパワー素子の出力信号と逆相の電位(振幅5V)に接続したときの金属基板20の電位抑制効果について、3相インバータモジュールを用いて確認した。図7は、キャパシタ62の一端をパワー素子の出力信号と逆相の電位に接続したときの逆相の電位、出力信号の電圧および金属基板の電位を測定したグラフである。図7に示すように、キャパシタ62の一端をパワー素子の出力信号と逆相の電位に接続した場合には、出力信号の振幅を450Vに増幅した状態の金属基板の電位変動が約1〜2Vに抑制され、金属基板の電位変動が誤動作が実施の形態1に比べてさらに低減されることが確認された。
実施の形態3に係る回路装置の概略構造は、実施の形態1と同様である。ただし、本実施の形態の回路装置では、図3に示した金属基板20に接続されたキャパシタ62の一端は、接地電位ではなく、金属基板20の電位変動に応じて定められた制御電位と接続されている。具体的には、金属基板20の電位変動を検出する電位検出手段(図示せず)を設け、電位検出手段によって金属基板20の電位変動が検出された場合に、金属基板20の電位を打ち消すような電位が制御電位に設定される。これにより、金属基板20の電位変動をより一層低減させることができるので、ノイズ低減効果をさらに高めることができる。
実施の形態4に係る回路装置の概略構造は、実施の形態1と同様である。ただし、本実施の形態の回路装置では、図3に示した金属基板20に接続されたキャパシタ62に代えて、差動増幅器が設けられている。具体的には、図8に示すように差動増幅器110の一方の入力端子(−)が金属基板20に接続され、差動増幅器110の他方の入力端子(+)が接地電位に接続され、差動増幅器110の出力端子が金属基板20に接続されている。差動増幅器110により、金属基板20の電位がパワー素子などからのノイズにより変化すると、電位変動を打ち消すように差動増幅器110が働くことにより、金属基板20の電位が接地レベルに維持される。金属基板20の電位を接地レベルに維持することにより、ノイズ低減効果をさらに高めることができる。
実施の形態5に係る回路装置の概略構造は、実施の形態1と同様である。ただし、本実施の形態の回路装置では、図3に示した金属基板20に接続されたキャパシタ62に代えて、図10に示すように、抵抗66(たとえば、50Ω)が設けられ、抵抗66の一端が金属基板20接続され、抵抗66の他端が接地電位と接続されている。これによれば、金属基板20のノイズは抵抗によって放電されるので、金属基板20の電位は接地レベルに保持される。金属基板20を露出させたことにより短絡が生じた場合には、抵抗66により電流が制限されるため、金属基板20と接触した外部回路等が損傷するおそれが低減する。
Claims (4)
- 金属基板と、
前記金属基板の上に設けられた絶縁樹脂層と、
前記絶縁樹脂層の上に設けられた配線と、
前記配線の上に設けられ、インバータモジュールの電力増幅部を構成するパワー素子からなる複数の回路素子と、
一方の端子が前記金属基板に接続され、他方の端子が前記電力増幅部の正または負の電源電圧である固定電位に接続されたキャパシタと、
を備え、
前記金属基板は前記固定電位以外の電位に設定されており、
前記固定電位以外の電位は電位変動する電位であることを特徴とする回路装置。 - 金属基板と、
前記金属基板の上に設けられた絶縁樹脂層と、
前記絶縁樹脂層の上に設けられた配線と、
前記配線の上に設けられ、インバータモジュールの電力増幅部を構成するパワー素子からなる複数の回路素子と、
一方の端子が前記金属基板に接続され、他方の端子が前記金属基板の電位を打ち消すような変動電位との間に接続されたキャパシタと、
を備えることを特徴とする回路装置。 - 前記変動電位は、前記回路素子の電位の逆相であることを特徴とする請求項2に記載の回路装置。
- 金属基板と、
前記金属基板の上に設けられた絶縁樹脂層と、
前記絶縁樹脂層の上に設けられた配線と、
前記配線の上に設けられ、インバータモジュールの電力増幅部を構成するパワー素子からなる複数の回路素子と、
前記金属基板の電位が変動したときに、前記金属基板に前記電位を相殺する電圧を付加して前記金属基板の電位を固定電位に維持する手段と、
を備えることを特徴とする回路装置。
Priority Applications (3)
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JP2007169772A JP5188110B2 (ja) | 2007-06-27 | 2007-06-27 | 回路装置 |
PCT/JP2008/001645 WO2009001554A1 (ja) | 2007-06-27 | 2008-06-24 | 回路装置 |
US12/667,031 US8363419B2 (en) | 2007-06-27 | 2008-06-24 | Circuit device |
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JP2007169772A JP5188110B2 (ja) | 2007-06-27 | 2007-06-27 | 回路装置 |
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JP2009010143A JP2009010143A (ja) | 2009-01-15 |
JP2009010143A5 JP2009010143A5 (ja) | 2010-08-05 |
JP5188110B2 true JP5188110B2 (ja) | 2013-04-24 |
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US (1) | US8363419B2 (ja) |
JP (1) | JP5188110B2 (ja) |
WO (1) | WO2009001554A1 (ja) |
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US8158510B2 (en) * | 2009-11-19 | 2012-04-17 | Stats Chippac, Ltd. | Semiconductor device and method of forming IPD on molded substrate |
JP2013197223A (ja) * | 2012-03-19 | 2013-09-30 | Hitachi Automotive Systems Ltd | 電子制御装置 |
CN104112731B (zh) * | 2013-07-17 | 2017-03-22 | 广东美的制冷设备有限公司 | 智能功率模块及其制造方法 |
DE102013219780A1 (de) * | 2013-09-30 | 2015-04-02 | Infineon Technologies Ag | Leistungshalbleitermodul und Verfahren zur Herstellung eines Leistungshalbleitermoduls |
KR102284123B1 (ko) * | 2014-05-26 | 2021-07-30 | 삼성전기주식회사 | 회로기판, 전자부품 및 회로기판 제조방법 |
WO2016017260A1 (ja) * | 2014-07-30 | 2016-02-04 | 富士電機株式会社 | 半導体モジュール |
CN106663677B (zh) * | 2014-08-22 | 2019-07-16 | 三菱电机株式会社 | 电力变换装置 |
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JPH04162691A (ja) | 1990-10-25 | 1992-06-08 | Sanyo Electric Co Ltd | 混成集積回路 |
JP2919674B2 (ja) | 1992-07-17 | 1999-07-12 | 三洋電機株式会社 | 混成集積回路 |
US6326678B1 (en) * | 1993-09-03 | 2001-12-04 | Asat, Limited | Molded plastic package with heat sink and enhanced electrical performance |
JPH11307689A (ja) * | 1998-02-17 | 1999-11-05 | Seiko Epson Corp | 半導体装置、半導体装置用基板及びこれらの製造方法並びに電子機器 |
JP2005005445A (ja) * | 2003-06-11 | 2005-01-06 | Sanyo Electric Co Ltd | 混成集積回路装置 |
JP4436706B2 (ja) * | 2004-03-25 | 2010-03-24 | 三洋電機株式会社 | 混成集積回路装置 |
JP2007157773A (ja) * | 2005-11-30 | 2007-06-21 | Sanyo Electric Co Ltd | 回路装置 |
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US20100188059A1 (en) | 2010-07-29 |
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