JP5184927B2 - 窒化物半導体発光素子および窒化物半導体発光素子の製造方法 - Google Patents
窒化物半導体発光素子および窒化物半導体発光素子の製造方法 Download PDFInfo
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- JP5184927B2 JP5184927B2 JP2008073911A JP2008073911A JP5184927B2 JP 5184927 B2 JP5184927 B2 JP 5184927B2 JP 2008073911 A JP2008073911 A JP 2008073911A JP 2008073911 A JP2008073911 A JP 2008073911A JP 5184927 B2 JP5184927 B2 JP 5184927B2
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- 239000004065 semiconductor Substances 0.000 title claims description 94
- 150000004767 nitrides Chemical class 0.000 title claims description 92
- 238000000034 method Methods 0.000 title description 24
- 238000004519 manufacturing process Methods 0.000 title description 6
- 230000001681 protective effect Effects 0.000 claims description 238
- 239000013078 crystal Substances 0.000 claims description 108
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 32
- 239000007789 gas Substances 0.000 description 28
- 229910052760 oxygen Inorganic materials 0.000 description 22
- 229910002601 GaN Inorganic materials 0.000 description 20
- 239000001301 oxygen Substances 0.000 description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 19
- 230000015572 biosynthetic process Effects 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 230000006866 deterioration Effects 0.000 description 15
- 125000004429 atom Chemical group 0.000 description 14
- 230000003287 optical effect Effects 0.000 description 14
- 229910002704 AlGaN Inorganic materials 0.000 description 13
- 238000011156 evaluation Methods 0.000 description 11
- 235000012239 silicon dioxide Nutrition 0.000 description 11
- 238000005253 cladding Methods 0.000 description 10
- 238000004140 cleaning Methods 0.000 description 10
- 239000010453 quartz Substances 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000003776 cleavage reaction Methods 0.000 description 8
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 8
- 230000007017 scission Effects 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 6
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 4
- 235000005811 Viola adunca Nutrition 0.000 description 3
- 240000009038 Viola odorata Species 0.000 description 3
- 235000013487 Viola odorata Nutrition 0.000 description 3
- 235000002254 Viola papilionacea Nutrition 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 208000012868 Overgrowth Diseases 0.000 description 1
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- -1 oxygen nitride Chemical class 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0281—Coatings made of semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0282—Passivation layers or treatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0287—Facet reflectivity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Description
以下、本発明の第1の実施形態について図面を参照しながら、説明を行う。
以下、本発明の第2の実施形態について図3を参照しながら、説明を行う。
以下、本発明の第3の実施形態について図6を参照しながら、説明を行う。
以下、本発明の第4の実施形態について図3を参照しながら、説明を行う。
11 n型AlGaNクラッド層
12 n型GaN光ガイド層
13 InGaNMQW活性層
14 InGaN光ガイド層
15 p型AlGaN光ガイド層
16 p型AlGaNクラッド層
17 p型GaNコンタクト層
18 誘電体膜
19 p側Pd/Ptコンタクト電極
20 p側Ti/Pt/Au配線電極
21 n側Ti/Pt/Auコンタクト電極
30 共振器端面
31 窒化アルミニウム第1保護膜(保護膜)
32 酸化アルミニウム第2保護膜(酸化物または酸窒化物を含む保護膜)
33 窒化アルミニウム第1保護膜(保護膜)
34 窒化アルミニウム第2保護膜(第2の保護膜)
35 酸化アルミニウム第3保護膜(酸化物または酸窒化物を含む保護膜)
101 ガス導入口
102 排気口
103 マイクロ波導入口
104 プラズマ室
105 成膜室
106 導入窓
107 エンドプレート
108 インナーチューブ
109 窓プレート
110 ターゲット
111 試料台
112 磁気コイル
113 RF電源
Claims (7)
- 基板上に設けられ、窒化物半導体結晶からなり、発光層を含む窒化物半導体の多層膜を備えた窒化物半導体発光素子であって、
前記窒化物半導体の多層膜は、共振器の端面を有し、
前記共振器の前記端面の少なくとも一方の端面上には、窒化アルミニウム結晶からなる保護膜が設けられており、
前記保護膜は、前記保護膜が設けられている前記共振器の前記端面に対して結晶軸が90度をなすC軸方向に配向した結晶面を有し、
前記保護膜と前記保護膜が設けられた前記共振器の前記端面との界面におけるシリコン量が1×10 20 atoms/cm 3 以下であることを特徴とする窒化物半導体発光素子。 - 基板上に設けられ、窒化物半導体結晶からなり、発光層を含む窒化物半導体の多層膜を備えた窒化物半導体発光素子であって、
前記窒化物半導体の多層膜は、共振器の端面を有し、
前記共振器の前記端面の少なくとも一方の端面上には、窒化物結晶または酸窒化物結晶からなる第1の保護膜が設けられており、
前記保護膜上には、窒化アルミニウム結晶からなる第2の保護膜が設けられており、
前記第2の保護膜は、前記第2の保護膜が設けられている前記共振器の前記端面に対して結晶軸が90度をなすC軸方向に配向した結晶面を有し、
前記保護膜と前記保護膜が設けられた前記共振器の前記端面との界面におけるシリコン量が1×10 20 atoms/cm 3 以下であることを特徴とする窒化物半導体発光素子。 - 前記第1の保護膜は、窒化アルミニウム結晶からなることを特徴とする請求項2に記載の窒化物半導体発光素子。
- 前記保護膜上に、酸化物または酸窒化物を含む第3の保護膜が設けられていることを特徴とする請求項1に記載の窒化物半導体発光素子。
- 前記第1の保護膜と第2の保護膜の間に、酸化物または酸窒化物を含む第3の保護膜が設けられていることを特徴とする請求項2に記載の窒化物半導体発光素子。
- 前記第2の保護膜上に、酸化物または酸窒化物を含む第4の保護膜を備えることを特徴とする請求項2に記載の窒化物半導体発光素子。
- 前記酸化物または前記酸窒化物は、Al、Si、Zr、Ti、Ta、Ga、NbおよびHfのうちの少なくとも一つを含むことを特徴とする請求項4から6のいずれか1項に記載の窒化物半導体発光素子。
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JP2008073911A JP5184927B2 (ja) | 2008-03-21 | 2008-03-21 | 窒化物半導体発光素子および窒化物半導体発光素子の製造方法 |
US12/401,929 US7759684B2 (en) | 2008-03-21 | 2009-03-11 | Nitride semiconductor light emitting device and method for fabricating the same |
CN200910126852.4A CN101540475A (zh) | 2008-03-21 | 2009-03-20 | 氮化物半导体发光元件和氮化物半导体发光元件的制造方法 |
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JP2008073911A JP5184927B2 (ja) | 2008-03-21 | 2008-03-21 | 窒化物半導体発光素子および窒化物半導体発光素子の製造方法 |
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JP5184927B2 true JP5184927B2 (ja) | 2013-04-17 |
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US11581701B2 (en) | 2018-02-14 | 2023-02-14 | Nuvoton Technology Corporation Japan | Nitride semiconductor laser element and illumination light source module |
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JP4621791B2 (ja) * | 2009-06-11 | 2011-01-26 | シャープ株式会社 | 窒化物半導体レーザ素子 |
TWI508327B (zh) * | 2010-03-05 | 2015-11-11 | Namiki Precision Jewel Co Ltd | An internal modified substrate for epitaxial growth, a multilayer film internal modified substrate, a semiconductor device, a semiconductor bulk substrate, and the like |
JP2011201759A (ja) * | 2010-03-05 | 2011-10-13 | Namiki Precision Jewel Co Ltd | 多層膜付き単結晶基板、多層膜付き単結晶基板の製造方法および素子製造方法 |
DE102012102306B4 (de) * | 2012-03-19 | 2021-05-12 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Laserdiodenvorrichtung |
JP5488775B1 (ja) * | 2012-12-19 | 2014-05-14 | パナソニック株式会社 | 窒化物半導体レーザ素子 |
WO2014097508A1 (ja) | 2012-12-19 | 2014-06-26 | パナソニック株式会社 | 窒化物半導体レーザ素子 |
JP2015023055A (ja) * | 2013-07-16 | 2015-02-02 | ソニー株式会社 | 電子装置、光ディスク装置、表示装置および撮像装置 |
EP3399606B1 (en) * | 2015-12-28 | 2023-07-26 | Furukawa Electric Co., Ltd. | Method for manufacturing semiconductor laser element |
CN112350144B (zh) * | 2020-10-27 | 2021-09-07 | 北京工业大学 | 一种高功率vcsel阵列芯片倒装焊封装结构及制备方法 |
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CN100550543C (zh) | 2002-06-26 | 2009-10-14 | 阿莫诺公司 | 氮化物半导体激光装置及其制造方法 |
US7285799B2 (en) * | 2004-04-21 | 2007-10-23 | Philip Lumileds Lighting Company, Llc | Semiconductor light emitting devices including in-plane light emitting layers |
JP5285835B2 (ja) * | 2005-07-13 | 2013-09-11 | 株式会社東芝 | 半導体素子およびその製造方法 |
JP2007103814A (ja) | 2005-10-07 | 2007-04-19 | Sharp Corp | 窒化物半導体発光素子およびその製造方法 |
JP5004597B2 (ja) | 2006-03-06 | 2012-08-22 | シャープ株式会社 | 窒化物半導体発光素子および窒化物半導体発光素子の製造方法 |
JP4978454B2 (ja) * | 2006-12-28 | 2012-07-18 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子 |
US7668218B2 (en) * | 2007-02-20 | 2010-02-23 | Nichia Corporation | Nitride semiconductor laser element |
JP2008218523A (ja) * | 2007-02-28 | 2008-09-18 | Nichia Chem Ind Ltd | 窒化物半導体レーザ素子及びその製造方法 |
JP2008227002A (ja) * | 2007-03-09 | 2008-09-25 | Nichia Chem Ind Ltd | 窒化物半導体レーザ素子 |
JP2008205171A (ja) * | 2007-02-20 | 2008-09-04 | Nichia Chem Ind Ltd | 窒化物半導体レーザ素子 |
JP5391588B2 (ja) * | 2007-07-06 | 2014-01-15 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子 |
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US11581701B2 (en) | 2018-02-14 | 2023-02-14 | Nuvoton Technology Corporation Japan | Nitride semiconductor laser element and illumination light source module |
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US20090236630A1 (en) | 2009-09-24 |
CN101540475A (zh) | 2009-09-23 |
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